LM2665M6X/NOPB [TI]

输入电压为 1.8V 至 5.5V 的开关电容倍压器 | DBV | 6 | -40 to 85;
LM2665M6X/NOPB
型号: LM2665M6X/NOPB
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

输入电压为 1.8V 至 5.5V 的开关电容倍压器 | DBV | 6 | -40 to 85

开关 控制器 开关式稳压器 开关式控制器 光电二极管 电源电路 开关式稳压器或控制器
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LM2665  
www.ti.com  
SNVS009F NOVEMBER 1999REVISED MAY 2013  
LM2665 Switched Capacitor Voltage Converter  
Check for Samples: LM2665  
1
FEATURES  
DESCRIPTION  
The LM2665 CMOS charge-pump voltage converter  
operates as a voltage doubler for an input voltage in  
the range of +2.5V to +5.5V. Two low cost capacitors  
and a diode (needed during start-up) are used in this  
circuit to provide up to 40 mA of output current. The  
LM2665 can also work as a voltage divider to split a  
voltage in the range of +1.8V to +11V in half.  
2
Doubles or Splits Input Supply Voltage  
6-Pin SOT-23 Package  
12Ω Typical Output Impedance  
90% Typical Conversion Efficiency at 40 mA  
1µA Typical Shutdown Current  
The LM2665 operates at 160 kHz oscillator frequency  
to reduce output resistance and voltage ripple. With  
an operating current of only 650 µA (operating  
efficiency greater than 90% with most loads) and 1µA  
typical shutdown current, the LM2665 provides ideal  
performance for battery powered systems. The  
device is in a SOT-23 package.  
APPLICATIONS  
Cellular Phones  
Pagers  
PDAs  
Operational Amplifier Power Suppliers  
Interface Power Suppliers  
Handheld Instruments  
Basic Application Circuits  
Voltage Doubler  
Splitting Vin in Half  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 1999–2013, Texas Instruments Incorporated  
LM2665  
SNVS009F NOVEMBER 1999REVISED MAY 2013  
www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Absolute Maximum Ratings(1)(2)  
V+ to GND Voltage:  
5.8V  
OUT to GND Voltage:  
11.6V  
OUT to V+ Voltage:  
5.8V  
SD  
(GND 0.3V) to (V+ + 0.3V)  
V+ and OUT Continuous Output Current  
Output Short-Circuit Duration to GND(3)  
50 mA  
1 sec.  
Continuous Power  
600 mW  
Dissipation (TA = 25°C)(4)  
(4)  
TJMax  
150°C  
210°C/W  
(4)  
θJA  
Operating Junction Temperature Range  
Storage Temperature Range  
Lead Temp. (Soldering, 10 seconds)  
ESD Rating  
40° to 85°C  
65°C to +150°C  
300°C  
2kV  
(1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when  
operating the device beyond its rated operating conditions.  
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and  
specifications.  
(3) OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and should be  
avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or device may be damaged.  
(4) The maximum allowable power dissipation is calculated by using PDMax = (TJMax TA)/θJA, where TJMax is the maximum junction  
temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance of the specified package.  
Electrical Characteristics  
Limits in standard typeface are for TJ = 25°C, and limits in boldface type apply over the full operating temperature range.  
Unless otherwise specified: V+ = 5V, C1 = C2 = 3.3 μF.(1)  
Symbol  
Parameter  
Condition  
Min  
Typ  
Max  
Units  
(2)  
(3)  
(2)  
V+  
IQ  
Supply Voltage  
2.5  
5.5  
V
Supply Current  
No Load  
650  
1
1250  
µA  
µA  
ISD  
Shutdown Supply Current  
Shutdown Pin Input Voltage  
VSD  
Shutdown Mode  
Normal Operation  
2.0  
(4)  
V
0.8  
(5)  
IL  
Output Current  
40  
mA  
RSW  
Sum of the Rds(on)of the four internal  
MOSFET switches  
IL = 40 mA  
IL = 40 mA  
3.5  
8
Ω
ROUT  
fOSC  
fSW  
Output Resistance(6)  
Oscillator Frequency  
Switching Frequency  
Power Efficiency  
12  
160  
80  
25  
Ω
(7)80  
40  
kHz  
kHz  
(7)  
PEFF  
RL (1.0k) between GND and OUT  
IL = 40 mA to GND  
86  
93  
%
90  
(1) In the test circuit, capacitors C1 and C2 are 3.3 µF, 0.3Ω maximum ESR capacitors. Capacitors with higher ESR will increase output  
resistance, reduce output voltage and efficiency.  
(2) Min. and Max. limits are guaranteed by design, test, or statistical analysis.  
(3) Typical numbers are not guaranteed but represent the most likely norm.  
(4) The minimum input high for the shutdown pin equals 40% of V+.  
(5) The maximum input low of the shutdown pin equals 20% of V+.  
(6) Specified output resistance includes internal switch resistance and capacitor ESR. See the details in the application information for  
positive voltage doubler.  
(7) The output switches operate at one half of the oscillator frequency, fOSC = 2fSW  
.
2
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LM2665  
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SNVS009F NOVEMBER 1999REVISED MAY 2013  
Electrical Characteristics (continued)  
Limits in standard typeface are for TJ = 25°C, and limits in boldface type apply over the full operating temperature range.  
Unless otherwise specified: V+ = 5V, C1 = C2 = 3.3 μF.(1)  
Symbol  
Parameter  
Condition  
Min  
Typ  
Max  
Units  
(2)  
(3)  
(2)  
VOEFF  
Voltage Conversion Efficiency  
No Load  
99  
99.96  
%
Test Circuit  
Figure 1. LM2665 Test Circuit  
Typical Performance Characteristics  
(Circuit of Figure 1, V+ = 5V unless otherwise specified)  
Supply Current vs  
Supply Voltage  
Supply Current vs  
Temperature  
Figure 2.  
Figure 3.  
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SNVS009F NOVEMBER 1999REVISED MAY 2013  
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Typical Performance Characteristics (continued)  
(Circuit of Figure 1, V+ = 5V unless otherwise specified)  
Output Source  
Resistance  
vs  
Output Source  
Resistance  
vs  
Supply  
Voltage  
Temperature  
Figure 4.  
Figure 5.  
Efficiency  
vs  
Load Current  
Output Voltage Drop  
vs Load Current  
Figure 6.  
Figure 7.  
Oscillator Frequency vs  
Supply Voltage  
Oscillator Frequency vs  
Temperature  
Figure 8.  
Figure 9.  
4
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LM2665  
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SNVS009F NOVEMBER 1999REVISED MAY 2013  
Typical Performance Characteristics (continued)  
(Circuit of Figure 1, V+ = 5V unless otherwise specified)  
Shutdown Supply  
Current vs  
Temperature  
Figure 10.  
Copyright © 1999–2013, Texas Instruments Incorporated  
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LM2665  
SNVS009F NOVEMBER 1999REVISED MAY 2013  
www.ti.com  
CONNECTION DIAGRAM  
6-Pin Small Outline Package  
1
2
3
6
5
4
Figure 11. DBV Package Top View  
Figure 12. Actual Size  
Pin Functions  
Function  
Pin  
Name  
Voltage Doubler  
Power supply positive voltage input.  
Power supply ground input  
Voltage Split  
Positive voltage output.  
Same as doubler  
1
2
3
V+  
GND  
CAP−  
Connect this pin to the negative terminal of the charge-  
pump capacitor  
Same as doubler.  
4
SD  
Shutdown control pin, tie this pin to ground in normal  
operation.  
Same as doubler.  
5
6
OUT  
Positive voltage output.  
Power supply positive voltage input  
CAP+  
Connect this pin to the positive terminal of the charge-pump Same as doubler  
capacitor.  
Circuit Description  
The LM2665 contains four large CMOS switches which are switched in a sequence to double the input supply  
voltage. Energy transfer and storage are provided by external capacitors. Figure 13 illustrates the voltage  
conversion scheme. When S2 and S4 are closed, C1 charges to the supply voltage V+. During this time interval,  
switches S1 and S3 are open. In the next time interval, S2 and S4 are open; at the same time, S1 and S3 are  
closed, the sum of the input voltage V+ and the voltage across C1 gives the 2V+ output voltage when there is no  
load. The output voltage drop when a load is added is determined by the parasitic resistance (Rds(on) of the  
MOSFET switches and the ESR of the capacitors) and the charge transfer loss between capacitors. Details will  
be discussed in the following application information section.  
Figure 13. Voltage Doubling Principle  
6
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LM2665  
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SNVS009F NOVEMBER 1999REVISED MAY 2013  
APPLICATION INFORMATION  
POSITIVE VOLTAGE DOUBLER  
The main application of the LM2665 is to double the input voltage. The range of the input supply voltage is 2.5V  
to 5.5V.  
The output characteristics of this circuit can be approximated by an ideal voltage source in series with a  
resistance. The voltage source equals 2V+. The output resistance Rout is a function of the ON resistance of the  
internal MOSFET switches, the oscillator frequency, the capacitance and ESR of C1 and C2. Since the switching  
current charging and discharging C1 is approximately twice as the output current, the effect of the ESR of the  
pumping capacitor C1 will be multiplied by four in the output resistance. The output capacitor C2 is charging and  
discharging at a current approximately equal to the output current, therefore, its ESR only counts once in the  
output resistance. A good approximation of Rout is:  
(1)  
where RSW is the sum of the ON resistance of the internal MOSFET switches shown in Figure 13.  
The peak-to-peak output voltage ripple is determined by the oscillator frequency, the capacitance and ESR of the  
output capacitor C2:  
(2)  
High capacitance, low ESR capacitors can reduce both the output resistance and the voltage ripple.  
The Schottky diode D1 is only needed for start-up. The internal oscillator circuit uses the OUT pin and the GND  
pin. Voltage across OUT and GND must be larger than 1.8V to insure the operation of the oscillator. During start-  
up, D1 is used to charge up the voltage at the OUT pin to start the oscillator; also, it protects the device from  
turning-on its own parasitic diode and potentially latching-up. Therefore, the Schottky diode D1 should have  
enough current carrying capability to charge the output capacitor at start-up, as well as a low forward voltage to  
prevent the internal parasitic diode from turning-on. A Schottky diode like 1N5817 can be used for most  
applications. If the input voltage ramp is less than 10V/ms, a smaller Schottky diode like MBR0520LT1 can be  
used to reduce the circuit size.  
SPLIT V+ IN HALF  
Another interesting application shown in the Basic Application Circuits is using the LM2665 as a precision voltage  
divider. . This circuit can be derived from the voltage doubler by switching the input and output connections. In  
the voltage divider, the input voltage applies across the OUT pin and the GND pin (which are the power rails for  
the internal oscillator), therefore no start-up diode is needed. Also, since the off-voltage across each switch  
equals Vin/2, the input voltage can be raised to +11V.  
SHUTDOWN MODE  
A shutdown (SD) pin is available to disable the device and reduce the quiescent current to 1 µA. In normal  
operating mode, the SD pin is connected to ground. The device can be brought into the shutdown mode by  
applying to the SD pin a voltage greater than 40% of the V+ pin voltage.  
CAPACITOR SELECTION  
As discussed in the Positive Voltage Doubler section, the output resistance and ripple voltage are dependent on  
the capacitance and ESR values of the external capacitors. The output voltage drop is the load current times the  
output resistance, and the power efficiency is  
(3)  
2
Where IQ(V+) is the quiescent power loss of the IC device, and IL Rout is the conversion loss associated with the  
switch on-resistance, the two external capacitors and their ESRs.  
Copyright © 1999–2013, Texas Instruments Incorporated  
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LM2665  
SNVS009F NOVEMBER 1999REVISED MAY 2013  
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The selection of capacitors is based on the specifications of the dropout voltage (which equals Iout Rout), the  
output voltage ripple, and the converter efficiency. Low ESR capacitors () are recommended to maximize  
efficiency, reduce the output voltage drop and voltage ripple.  
Low ESR Capacitor Manufacturers  
Manufacturer  
Nichicon Corp.  
Phone  
Capacitor Type  
PL & PF series, through-hole aluminum electrolytic  
TPS series, surface-mount tantalum  
593D, 594D, 595D series, surface-mount tantalum  
OS-CON series, through-hole aluminum electrolytic  
Ceramic chip capacitors  
(708)-843-7500  
(803)-448-9411  
(207)-324-4140  
(619)-661-6835  
(800)-831-9172  
(800)-348-2496  
(408)-432-8020  
AVX Corp.  
Sprague  
Sanyo  
Murata  
Taiyo Yuden  
Tokin  
Ceramic chip capacitors  
Ceramic chip capacitors  
Other Applications  
PARALLELING DEVICES  
Any number of LM2665s can be paralleled to reduce the output resistance. Each device must have its own  
pumping capacitor C1, while only one output capacitor Cout is needed as shown in Figure 14. The composite  
output resistance is:  
(4)  
Figure 14. Lowering Output Resistance by Paralleling Devices  
CASCADING DEVICES  
Cascading the LM2665s is an easy way to produce a greater voltage (A two-stage cascade circuit is shown in  
Figure 15).  
The effective output resistance is equal to the weighted sum of each individual device:  
Rout = 1.5Rout_1 + Rout_2  
(5)  
Note that, the increasing of the number of cascading stages is pracitically limited since it significantly reduces the  
efficiency, increases the output resistance and output voltage ripple.  
8
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SNVS009F NOVEMBER 1999REVISED MAY 2013  
Figure 15. Increasing Output Voltage by Cascading Devices  
REGULATING VOUT  
It is possible to regulate the output of the LM2665 by use of a low dropout regulator (such as LP2980-5.0). The  
whole converter is depicted in Figure 16.  
A different output voltage is possible by use of LP2980-3.3, LP2980-3.0, or LP2980-adj.  
Note that, the following conditions must be satisfied simultaneously for worst case design:  
2Vin_min >Vout_min +Vdrop_max (LP2980) + Iout_max × Rout_max (LM2665)  
2Vin_max < Vout_max +Vdrop_min (LP2980) + Iout_min × Rout_min (LM2665)  
(6)  
(7)  
Figure 16. Generate a Regulated +5V from +3V Input Voltage  
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SNVS009F NOVEMBER 1999REVISED MAY 2013  
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REVISION HISTORY  
Changes from Revision E (May 2013) to Revision F  
Page  
Changed layout of National Data Sheet to TI format ............................................................................................................ 9  
10  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
1-Nov-2013  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
1000  
1000  
(1)  
(2)  
(6)  
(3)  
(4/5)  
LM2665M6  
NRND  
ACTIVE  
SOT-23  
SOT-23  
DBV  
6
6
TBD  
Call TI  
CU SN  
Call TI  
-40 to 85  
-40 to 85  
S04A  
S04A  
LM2665M6/NOPB  
DBV  
Green (RoHS  
& no Sb/Br)  
Level-1-260C-UNLIM  
LM2665M6X  
NRND  
SOT-23  
SOT-23  
DBV  
DBV  
6
6
3000  
3000  
TBD  
Call TI  
CU SN  
Call TI  
-40 to 85  
-40 to 85  
S04A  
S04A  
LM2665M6X/NOPB  
ACTIVE  
Green (RoHS  
& no Sb/Br)  
Level-1-260C-UNLIM  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish  
value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
1-Nov-2013  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
8-May-2013  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LM2665M6  
LM2665M6/NOPB  
LM2665M6X  
SOT-23  
SOT-23  
SOT-23  
SOT-23  
DBV  
DBV  
DBV  
DBV  
6
6
6
6
1000  
1000  
3000  
3000  
178.0  
178.0  
178.0  
178.0  
8.4  
8.4  
8.4  
8.4  
3.2  
3.2  
3.2  
3.2  
3.2  
3.2  
3.2  
3.2  
1.4  
1.4  
1.4  
1.4  
4.0  
4.0  
4.0  
4.0  
8.0  
8.0  
8.0  
8.0  
Q3  
Q3  
Q3  
Q3  
LM2665M6X/NOPB  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
8-May-2013  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LM2665M6  
LM2665M6/NOPB  
LM2665M6X  
SOT-23  
SOT-23  
SOT-23  
SOT-23  
DBV  
DBV  
DBV  
DBV  
6
6
6
6
1000  
1000  
3000  
3000  
210.0  
210.0  
210.0  
210.0  
185.0  
185.0  
185.0  
185.0  
35.0  
35.0  
35.0  
35.0  
LM2665M6X/NOPB  
Pack Materials-Page 2  
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