LM27342SD/NOPB [TI]

LM27341/LM27342/LM27341-Q1/LM27342-Q1 2 MHz 1.5A/2A Wide Input Range Step-Down DC-DC Regulator with Frequency Synchronization;
LM27342SD/NOPB
型号: LM27342SD/NOPB
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

LM27341/LM27342/LM27341-Q1/LM27342-Q1 2 MHz 1.5A/2A Wide Input Range Step-Down DC-DC Regulator with Frequency Synchronization

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LM27341, LM27342, LM27341-Q1, LM27342-Q1  
www.ti.com  
SNVS497E NOVEMBER 2008REVISED APRIL 2013  
LM27341/LM27342/LM27341-Q1/LM27342-Q1 2 MHz 1.5A/2A Wide Input Range Step-Down  
DC-DC Regulator with Frequency Synchronization  
Check for Samples: LM27341, LM27342, LM27341-Q1, LM27342-Q1  
1
FEATURES  
DESCRIPTION  
The LM27341 and LM27342 regulators are  
monolithic, high frequency, PWM step-down DC-DC  
converters in 10-pin SON and 10-pin MSOP-  
PowerPad packages. They contain all the active  
functions to provide local DC-DC conversion with fast  
transient response and accurate regulation in the  
smallest possible PCB area.  
2
Space Saving 3 x 3 mm 10-Pin SON and  
MSOP-PowerPad Packages  
Wide Input Voltage Range: 3V to 20V  
Wide Output Voltage Range: 1V to 18V  
LM27341 Delivers 1.5A Maximum Output  
Current  
With  
a
minimum of external components the  
LM27342 Delivers 2A Maximum Output Current  
High Switching Frequency: 2 MHz  
LM27341 and LM27342 are easy to use. The ability  
to drive 1.5A or 2A loads respectively, with an internal  
150 mNMOS switch results in the best power  
density available. The world-class control circuitry  
allows for on-times as low as 65 ns, thus supporting  
exceptionally high frequency conversion. Switching  
Frequency Synchronization: 1.00 MHz < fSW  
2.35 MHz  
<
150 mNMOS Switch with Internal Bootstrap  
Supply  
frequency is internally set to  
2
MHz and  
70 nA Shutdown Current  
synchronizable from 1 to 2.35 MHz, which allows the  
use of extremely small surface mount inductors and  
chip capacitors. Even though the operating frequency  
is very high, efficiencies up to 90% are easy to  
achieve. External shutdown is included featuring an  
ultra-low shutdown current of 70 nA. The LM27341  
and LM27342 utilize peak current-mode control and  
internal compensation to provide high-performance  
regulation over a wide range of operating conditions.  
Additional features include internal soft-start circuitry  
to reduce inrush current, pulse-by-pulse current limit,  
Internal Voltage Reference Accuracy of 1%  
Peak Current-Mode, PWM Operation  
Thermal Shutdown  
LM27341-Q1 and LM27342-Q1 are AEC-Q100  
Grade 1 Qualified and are Manufactured on an  
Automotive Grade Flow  
APPLICATIONS  
Local 12V to Vcore Step-Down Converters  
Radio Power Supply  
Core Power in HDDs  
Set-Top Boxes  
thermal  
protection.  
shutdown,  
and  
output  
over-voltage  
Automotive  
USB Powered Devices  
DSL Modems  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2008–2013, Texas Instruments Incorporated  
LM27341, LM27342, LM27341-Q1, LM27342-Q1  
SNVS497E NOVEMBER 2008REVISED APRIL 2013  
www.ti.com  
Typical Application Circuit  
PVIN  
VIN  
BOOST  
C2  
D1  
AVIN  
L1  
C1  
SW  
VOUT  
C3  
LM27341/2  
ON  
EN  
OFF  
R1  
SYNC  
FB  
CLK  
GND / DAP  
R2  
Figure 1.  
Figure 2. Efficiency vs Load Current  
VOUT = 5V, fsw = 2 MHz  
Connection Diagram  
1
2
3
4
5
PVIN  
PVIN  
AVIN  
GND  
FB  
10 PVIN  
10  
9
SW  
SW  
1
2
3
4
5
SW  
SW  
PVIN  
9
8
7
6
BOOST  
EN  
8
DAP  
BOOST  
AVIN  
GND  
FB  
DAP  
7
EN  
SYNC  
6
SYNC  
Figure 3. 10-Lead SON (Top View)  
See DSC0010A Package  
Figure 4. 10-Lead MSOP-PowerPad (Top View)  
See DGQ0010A Package  
PIN DESCRIPTIONS  
Pin  
1, 2  
3
Name  
Function  
SW  
Output switch. Connects to the inductor, catch diode, and bootstrap capacitor.  
BOOST  
Boost voltage that drives the internal NMOS control switch. A bootstrap capacitor is connected between the  
BOOST and SW pins.  
4
5
EN  
Enable control input. Logic high enables operation. Do not allow this pin to float or be greater than VIN + 0.3V.  
SYNC  
Frequency synchronization input. Drive this pin with an external clock or pulse train. Ground it to use the  
internal clock.  
6
7
FB  
Feedback pin. Connect FB to the external resistor divider to set output voltage.  
GND  
Signal and Power Ground pin. Place the bottom resistor of the feedback network as close as possible to this  
pin for accurate regulation.  
8
AVIN  
PVIN  
GND  
Supply voltage for the control circuitry.  
9, 10  
DAP  
Supply voltage for output power stage. Connect a bypass capacitor to this pin.  
Signal / Power Ground and thermal connection. Tie this directly to GND (pin 7). See Application Information  
regarding optimum thermal layout.  
2
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LM27341, LM27342, LM27341-Q1, LM27342-Q1  
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SNVS497E NOVEMBER 2008REVISED APRIL 2013  
Absolute Maximum Ratings(1)(2)  
AVIN, PVIN  
-0.5V to 24V  
-0.5V to 24V  
-0.5V to 28V  
-0.5V to 6.0V  
-0.5V to 3.0V  
-0.5V to 6.0V  
-0.5V to (VIN + 0.3V)  
65°C to +150°C  
150°C  
SW Voltage  
Boost Voltage  
Boost to SW Voltage  
FB Voltage  
SYNC Voltage  
EN Voltage  
Storage Temperature Range  
Junction Temperature  
ESD Susceptibility(3)  
Soldering Information  
2kV  
Infrared Reflow (5sec)  
260°C  
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur, including inoperability and degradation of  
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or  
other conditions beyond those indicated in the recommended Operating Ratings is not implied. The recommended Operating Ratings  
indicate conditions at which the device is functional and should not be operated beyond such conditions.  
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and  
specifications.  
(3) Human body model, 1.5 kin series with 100 pF.  
Operating Ratings(1)  
AVIN, PVIN  
3V to 20V  
-0.5V to 20V  
-0.5V to 24V  
3.0V to 5.5V  
40°C to +125°C  
33°C/W  
SW Voltage  
Boost Voltage  
Boost to SW Voltage  
Junction Temperature Range  
Thermal Resistance (θJA) SON(2)  
Thermal Resistance (θJA) MSOP-PowerPad(2)  
45°C/W  
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur, including inoperability and degradation of  
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or  
other conditions beyond those indicated in the recommended Operating Ratings is not implied. The recommended Operating Ratings  
indicate conditions at which the device is functional and should not be operated beyond such conditions.  
(2) Thermal shutdown will occur if the junction temperature exceeds 165°C. The maximum power dissipation is a function of TJ(MAX) , θJA  
and TA . The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/θJA . All numbers apply for  
packages soldered directly onto a 3” x 3” PC board with 2oz. copper on 4 layers in still air.  
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SNVS497E NOVEMBER 2008REVISED APRIL 2013  
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Electrical Characteristics  
Specifications with standard typeface are for TJ = 25°C, and those in boldface type apply over the full Operating  
Temperature Range (TJ = -40°C to 125°C). VIN = 12V, and VBOOST - VSW = 4.3V unless otherwise specified. Datasheet  
min/max specification limits are ensured by design, test, or statistical analysis.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
SYSTEM PARAMETERS  
TJ = 0°C to 85°C  
0.990  
1.0  
1.0  
1.010  
VFB  
Feedback Voltage  
V
TJ = -40°C to 125°C  
0.984  
1.014  
Feedback Voltage Line  
Regulation  
ΔVFB/ΔVIN  
IFB  
VIN = 3V to 20V  
0.003  
20  
% / V  
nA  
Feedback Input Bias Current  
100  
Over Voltage Protection, VFB at  
which PWM Halts.  
OVP  
1.13  
V
Undervoltage Lockout  
UVLO Hysteresis  
Soft Start Time  
VIN Rising until VSW is Switching  
VIN Falling from UVLO  
2.60  
0.30  
0.5  
2.75  
0.47  
1
2.90  
0.6  
UVLO  
SS  
V
1.5  
ms  
Quiescent Current, IQ = IQ_AVIN  
IQ_PVIN  
+
+
VFB = 1.1 (not switching)  
VEN = 0V (shutdown)  
2.4  
70  
mA  
IQ  
Quiescent Current, IQ = IQ_AVIN  
IQ_PVIN  
nA  
fSW= 2 MHz  
fSW= 1 MHz  
8.2  
4.4  
10  
IBOOST  
Boost Pin Current  
mA  
6
OSCILLATOR  
fSW  
Switching Frequency  
SYNC = GND  
VFB = 0V  
1.75  
2
2.3  
MHz  
V
FB Pin Voltage where SYNC input  
is overridden.  
VFB_FOLD  
0.53  
220  
fFOLD_MIN Frequency Foldback Minimum  
250  
kHz  
LOGIC INPUTS (EN, SYNC)  
fSYNC  
VIL  
SYNC Frequency Range  
1
2.35  
0.4  
MHz  
V
EN, SYNC Logic low threshold  
EN, SYNC Logic high threshold  
Logic Falling Edge  
Logic Rising Edge  
VIH  
1.8  
SYNC, Time Required above VIH  
to Ensure a Logical High.  
tSYNC_HIGH  
100  
100  
ns  
SYNC, Time Required below VIL  
to Ensure a Logical Low.  
tSYNC_LOW  
ISYNC  
ns  
SYNC Pin Current  
VSYNC < 5V  
VEN = 3V  
20  
6
nA  
15  
IEN  
Enable Pin Current  
µA  
VIN = VEN = 20V  
50  
100  
INTERNAL MOSFET  
RDS(ON) Switch ON Resistance  
ICL  
150  
320  
4.0  
3.7  
mΩ  
Switch Current Limit  
LM27342  
2.5  
2.0  
85  
A
LM27341  
DMAX  
tMIN  
Maximum Duty Cycle  
Minimum on time  
SYNC = GND  
93  
65  
40  
%
ns  
nA  
ISW  
Switch Leakage Current  
BOOST LDO  
VLDO  
Boost LDO Output Voltage  
3.9  
V
THERMAL  
TSHDN  
Thermal Shutdown Temperature  
Thermal Shutdown Hysteresis  
Junction temperature rising  
Junction temperature falling  
165  
15  
°C  
°C  
4
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SNVS497E NOVEMBER 2008REVISED APRIL 2013  
Typical Performance Characteristics  
All curves taken at VIN = 12V, VBOOST - VSW = 4.3V and TA = 25°C, unless specified otherwise.  
Efficiency vs Load Current  
VOUT = 5V, fSW = 2 MHz  
Refer to Figure 40  
Load Transient  
VOUT = 5V, IOUT = 100 mA - 2A @ slewrate = 2A / µs  
Refer to Figure 40  
Figure 5.  
Figure 6.  
Efficiency vs Load Current  
VOUT = 3.3V, fSW = 2 MHz  
Refer to Figure 46  
Load Transient  
VOUT = 3.3V, IOUT = 100 mA - 2A @ slewrate = 2A / µs  
Refer to Figure 46  
Figure 7.  
Figure 8.  
Efficiency vs Load Current  
VOUT = 1.8V, fSW = 2 MHz  
Refer to Figure 55  
Load Transient  
VOUT = 1.8V, IOUT = 100 mA - 2A @ slewrate = 2A / µs  
Refer to Figure 55  
Figure 9.  
Figure 10.  
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Typical Performance Characteristics (continued)  
All curves taken at VIN = 12V, VBOOST - VSW = 4.3V and TA = 25°C, unless specified otherwise.  
Line Transient  
VIN = 10 to 15V, VOUT = 3.3V, no CFF  
Refer to Figure 49  
Line Transient  
VIN = 10 to 15V, VOUT = 3.3V  
Refer to Figure 46  
Figure 11.  
Figure 12.  
Short Circuit  
Short Circuit Release  
Figure 13.  
Soft Start  
Figure 14.  
Soft Start with EN Tied to VIN  
Figure 15.  
Figure 16.  
6
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SNVS497E NOVEMBER 2008REVISED APRIL 2013  
Typical Performance Characteristics (continued)  
All curves taken at VIN = 12V, VBOOST - VSW = 4.3V and TA = 25°C, unless specified otherwise.  
VIN = 12V, VOUT = 5 V, L = 2.2 µH, COUT = 44 µF Iout =1A  
VIN = 12V, VOUT = 3.3V, L = 1.5 µH COUT = 44 µF Iout =1A  
Refer to Figure 40  
Refer to Figure 46  
Figure 17.  
Figure 18.  
VIN = 5V, VOUT = 1.8V, L = 1.0 µH COUT = 44 µF Iout =1A  
Refer to Figure 55  
VIN = 5V, VOUT = 1.2V, L = 0.56 µH COUT = 68 µF Iout =1A  
Refer to Figure 61  
Figure 19.  
Figure 20.  
Sync Functionality  
Loss of Synchronization  
Figure 21.  
Figure 22.  
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Typical Performance Characteristics (continued)  
All curves taken at VIN = 12V, VBOOST - VSW = 4.3V and TA = 25°C, unless specified otherwise.  
Oscillator Frequency vs Temperature  
VSYNC = GND, fSW = 2 MHz  
Oscillator Frequency vs VFB  
Figure 23.  
Figure 24.  
VFB vs VIN  
VFB vs Temperature  
Figure 25.  
Figure 26.  
Current Limit vs Temperature  
VIN = 12V  
RDSON vs Temperature  
Figure 27.  
Figure 28.  
8
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SNVS497E NOVEMBER 2008REVISED APRIL 2013  
Typical Performance Characteristics (continued)  
All curves taken at VIN = 12V, VBOOST - VSW = 4.3V and TA = 25°C, unless specified otherwise.  
IQ (Shutdown) vs Temperature  
IQ = IAVIN + IPVIN  
IEN vs VEN  
Figure 29.  
Figure 30.  
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Block Diagram  
BOOST  
SW  
D2  
LDO  
C2  
Switch  
0.15W  
L
L
R
SENSE  
PVIN  
V
OUT  
i
C3  
D1  
Driver  
Current Sense  
Amplifier  
EN  
AVIN  
Under  
Voltage  
Lockout  
PWM Logic  
PWM  
Comparator  
Current  
Limit  
Thermal  
Shutdown  
Reset  
Pulse  
Error  
Signal  
-
+
I
SENSE  
+
-
OVP Comparator  
1.13V  
Corrective  
Ramp  
R1  
FB  
Soft Start  
-
SYNC  
+
Internal  
Compensation  
+
-
Oscillator  
V
REF  
+
R2  
Error Amplifier  
1.0V  
GND  
+
-
+
-
Freq. Foldback Amplifier  
0.53V  
Figure 31.  
APPLICATION INFORMATION  
THEORY OF OPERATION  
The LM27341/LM27342 is a constant-frequency, peak current-mode PWM buck regulator IC that delivers a 1.5  
or 2A load current. The regulator has a preset switching frequency of 2 MHz. This high frequency allows the  
LM27341/LM27342 to operate with small surface mount capacitors and inductors, resulting in a DC-DC converter  
that requires a minimum amount of board space. The LM27341/LM27342 is internally compensated, which  
reduces design time, and requires few external components.  
The following operating description of the LM27341/LM27342 will refer to the Block Diagram (Figure 31) and to  
the waveforms in Figure 32. The LM27341/LM27342 supplies a regulated output voltage by switching the internal  
NMOS switch at a constant frequency and varying the duty cycle. A switching cycle begins at the falling edge of  
the reset pulse generated by the internal oscillator. When this pulse goes low, the output control logic turns on  
the internal NMOS switch. During this on-time, the SW pin voltage (VSW) swings up to approximately VIN, and the  
inductor current (iL) increases with a linear slope. The current-sense amplifier measures iL, which generates an  
output proportional to the switch current typically called the sense signal. The sense signal is summed with the  
regulator’s corrective ramp and compared to the error amplifier’s output, which is proportional to the difference  
between the feedback voltage (VFB) and VREF. When the output of the PWM comparator goes high, the switch  
turns off until the next switching cycle begins. During the switch off-time (tOFF), inductor current discharges  
through the catch diode D1, which forces the SW pin (VSW) to swing below ground by the forward voltage (VD1  
of the catch diode. The regulator loop adjusts the duty cycle (D) to maintain a constant output voltage.  
)
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V
SW  
D = t /T  
ON SW  
V
IN  
t
t
OFF  
ON  
0
D1  
t
-V  
T
SW  
iL  
I
I
LPK  
OUT  
Di  
L
0
t
Figure 32. LM27341/LM27342 Waveforms of SW Pin Voltage and Inductor Current  
BOOST FUNCTION  
Capacitor C2 in Figure 31, commonly referred to as CBOOST, is used to store a voltage VBOOST. When the  
LM27341/LM27342 starts up, an internal LDO charges CBOOST ,via an internal diode, to a voltage sufficient to  
turn the internal NMOS switch on. The gate drive voltage supplied to the internal NMOS switch is VBOOST - VSW  
.
During a normal switching cycle, when the internal NMOS control switch is off (tOFF) (refer to Figure 32), VBOOST  
equals VLDO minus the forward voltage of the internal diode (VD2). At the same time the inductor current (iL)  
forward biases the catch diode D1 forcing the SW pin to swing below ground by the forward voltage drop of the  
catch diode (VD1). Therefore, the voltage stored across CBOOST is  
VBOOST - VSW = VLDO - VD2 + VD1  
(1)  
(2)  
(3)  
(4)  
(5)  
Thus,  
VBOOST = VSW + VLDO - VD2 + VD1  
When the NMOS switch turns on (tON), the switch pin rises to  
VSW = VIN – (RDSON x IL),  
reverse biasing D1, and forcing VBOOST to rise. The voltage at VBOOST is then  
VBOOST = VIN – (RDSON x IL) + VLDO – VD2 + VD1  
which is approximately  
VIN + VLDO- 0.4V  
VBOOST has pulled itself up by its "bootstraps", or boosted to a higher voltage.  
LOW INPUT VOLTAGE CONSIDERATIONS  
When the input voltage is below 5V and the duty cycle is greater than 75 percent, the gate drive voltage  
developed across CBOOST might not be sufficient for proper operation of the NMOS switch. In this case, CBOOST  
should be charged via an external Schottky diode attached to a 5V voltage rail, see Figure 33. This ensures that  
the gate drive voltage is high enough for proper operation of the NMOS switch in the triode region. Maintain  
VBOOST - VSW less than the 6V absolute maximum rating.  
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D2  
L1  
PVIN  
5V  
BOOST  
SW  
VIN  
C2  
D1  
AVIN  
C1  
VOUT  
C3  
LM27342  
ON  
EN  
OFF  
R1  
SYNC  
FB  
CLK  
GND/DAP  
R2  
Figure 33. External Diode Charges CBOOST  
HIGH OUTPUT VOLTAGE CONSIDERATIONS  
When the output voltage is greater than 3.3V, a minimum load current is needed to charge CBOOST, see  
Figure 34. The minimum load current forward biases the catch diode D1 forcing the SW pin to swing below  
ground. This allows CBOOST to charge, ensuring that the gate drive voltage is high enough for proper operation.  
The minimum load current depends on many factors including the inductor value.  
Figure 34. Minimum Load Current for L = 1.5 µH  
ENABLE PIN / SHUTDOWN MODE  
Connect the EN pin to a voltage source greater than 1.8V to enable operation of the LM27341/LM27342. Apply a  
voltage less than 0.4V to put the part into shutdown mode. In shutdown mode the quiescent current drops to  
typically 70 nA. Switch leakage adds another 40 nA from the input supply. For proper operation, the  
LM27341/LM27342 EN pin should never be left floating, and the voltage should never exceed VIN + 0.3V.  
The simplest way to enable the operation of the LM27341/LM27342 is to connect the EN pin to AVIN which  
allows self start-up of the LM27341/LM27342 when the input voltage is applied.  
When the rise time of VIN is longer than the soft-start time of the LM27341/LM27342 this method may result in an  
overshoot in output voltage. In such applications, the EN pin voltage can be controlled by a separate logic signal,  
or tied to a resistor divider, which reaches 1.8V after VIN is fully established (see Figure 35). This will minimize  
the potential for output voltage overshoot during a slow VIN ramp condition. Use the lowest value of VIN , seen in  
your application when calculating the resistor network, to ensure that the 1.8V minimum EN threshold is reached.  
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PVIN  
AVIN  
BOOST  
VIN  
C2  
D1  
L1  
C1  
SW  
VOUT  
C3  
R3  
R4  
LM27342  
EN  
R1  
SYNC  
FB  
CLK  
GND/DAP  
R2  
Figure 35. Resistor Divider on EN  
VIN  
1.8  
x R4  
- 1  
R3 =  
(6)  
FREQUENCY SYNCHRONIZATION  
The LM27341/LM27342 switching frequency can be synchronized to an external clock, between 1.00 and 2.35  
MHz, applied at the SYNC pin. At the first rising edge applied to the SYNC pin, the internal oscillator is  
overridden and subsequent positive edges will initiate switching cycles. If the external SYNC signal is lost during  
operation, the LM27341/LM27342 will revert to its internal 2 MHz oscillator within 1.5 µs. To disable Frequency  
Synchronization and utilize the internal 2 MHz oscillator, connect the SYNC pin to GND.  
The SYNC pin gives the designer the flexibility to optimize their design. A lower switching frequency can be  
chosen for higher efficiency. A higher switching frequency can be chosen to keep EMI out of sensitive ranges  
such as the AM radio band. Synchronization can also be used to eliminate beat frequencies generated by the  
interaction of multiple switching power converters. Synchronizing multiple switching power converters will result  
in cleaner power rails.  
The selected switching frequency (fSYNC) and the minimum on-time (tMIN) limit the minimum duty cycle (DMIN) of  
the device.  
DMIN= tMIN x fSYNC  
(7)  
Operation below DMIN is not reccomended. The LM27341/LM27342 will skip pulses to keep the output voltage in  
regulation, and the current limit is not ensured. The switching is in phase but no longer at the same switching  
frequency as the SYNC signal.  
CURRENT LIMIT  
The LM27341 and LM27342 use cycle-by-cycle current limiting to protect the output switch. During each  
switching cycle, a current limit comparator detects if the output switch current exceeds 2.0A min (LM27341) or  
2.5A min (LM27342) , and turns off the switch until the next switching cycle begins.  
FREQUENCY FOLDBACK  
The LM27341/LM27342 employs frequency foldback to protect the device from current run-away during output  
short-circuit. Once the FB pin voltage falls below regulation, the switch frequency will smoothly reduce with the  
falling FB voltage until the switch frequency reaches 220 kHz (typ). If the device is synchronized to an external  
clock, synchronization is disabled until the FB pin voltage exceeds 0.53V  
SOFT-START  
The LM27341/LM27342 has a fixed internal soft-start of 1 ms (typ). During soft-start, the error amplifier’s  
reference voltage ramps from 0.0 V to its nominal value of 1.0 V in approximately 1 ms. This forces the regulator  
output to ramp in a controlled fashion, which helps reduce inrush current. Upon soft-start the part will initially be  
in frequency foldback and the frequency will rise as FB rises. The regulator will gradually rise to 2 MHz. The  
LM27341/LM27342 will allow synchronization to an external clock at FB > 0.53V.  
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OUTPUT OVERVOLTAGE PROTECTION  
The overvoltage comparator turns off the internal power NFET when the FB pin voltage exceeds the internal  
reference voltage by 13% (VFB > 1.13 * VREF). With the power NFET turned off the output voltage will decrease  
toward the regulation level.  
UNDERVOLTAGE LOCKOUT  
Undervoltage lockout (UVLO) prevents the LM27341/LM27342 from operating until the input voltage exceeds  
2.75V(typ).  
The UVLO threshold has approximately 470 mV of hysteresis, so the part will operate until VIN drops below  
2.28V(typ). Hysteresis prevents the part from turning off during power up if VIN has finite impedance.  
THERMAL SHUTDOWN  
Thermal shutdown limits total power dissipation by turning off the internal NMOS switch when the IC junction  
temperature exceeds 165°C (typ). After thermal shutdown occurs, hysteresis prevents the internal NMOS switch  
from turning on until the junction temperature drops to approximately 150°C.  
Design Guide  
INDUCTOR SELECTION  
Inductor selection is critical to the performance of the LM27341/LM27342. The selection of the inductor affects  
stability, transient response and efficiency. A key factor in inductor selection is determining the ripple current (ΔiL)  
(see Figure 32).  
The ripple current (ΔiL) is important in many ways.  
First, by allowing more ripple current, lower inductance values can be used with a corresponding decrease in  
physical dimensions and improved transient response. On the other hand, allowing less ripple current will  
increase the maximum achievable load current and reduce the output voltage ripple (see OUTPUT CAPACITOR  
section for more details on calculating output voltage ripple). Increasing the maximum load current is achieved by  
ensuring that the peak inductor current (ILPK) never exceeds the minimum current limit of 2.0A min (LM27341) or  
2.5A min (LM27342) .  
ILPK = IOUT + ΔiL / 2  
(8)  
Secondly, the slope of the ripple current affects the current control loop. The LM27341/LM27342 has a fixed  
slope corrective ramp. When the slope of the current ripple becomes significantly less than the converter’s  
corrective ramp (see Figure 31), the inductor pole will move from high frequencies to lower frequencies. This  
negates one advantage that peak current-mode control has over voltage-mode control, which is, a single low  
frequency pole in the power stage of the converter. This can reduce the phase margin, crossover frequency and  
potentially cause instability in the converter. Contrarily, when the slope of the ripple current becomes significantly  
greater than the converter’s corrective ramp, resonant peaking can occur in the control loop. This can also cause  
instability (Sub-Harmonic Oscillation) in the converter. For the power supply designer this means that for lower  
switching frequencies the current ripple must be increased to keep the inductor pole well above crossover. It also  
means that for higher switching frequencies the current ripple must be decreased to avoid resonant peaking.  
With all these factors, how is the desired ripple current selected? The ripple ratio (r) is defined as the ratio of  
inductor ripple current (ΔiL) to output current (IOUT), evaluated at maximum load:  
DiL  
r =  
lOUT  
(9)  
A good compromise between physical size, transient response and efficiency is achieved when we set the ripple  
ratio between 0.2 and 0.4. The recommended ripple ratio vs. duty cycle shown below (see Figure 36) is based  
upon this compromise and control loop optimizations. Note that this is just a guideline. Please see Application  
note AN-1197 SNVA038 for further considerations.  
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Figure 36. Recommended Ripple Ratio Vs. Duty Cycle  
The Duty Cycle (D) can be approximated quickly using the ratio of output voltage (VOUT) to input voltage (VIN):  
VOUT  
D =  
VIN  
(10)  
The application's lowest input voltage should be used to calculate the ripple ratio. The catch diode forward  
voltage drop (VD1) and the voltage drop across the internal NFET (VDS) must be included to calculate a more  
accurate duty cycle. Calculate D by using the following formula:  
VOUT + VD1  
D =  
VIN + VD1 - VDS  
(11)  
VDS can be approximated by:  
VDS = IOUT x RDS(ON)  
(12)  
The diode forward drop (VD1) can range from 0.3V to 0.5V depending on the quality of the diode. The lower VD1  
is, the higher the operating efficiency of the converter.  
Now that the ripple current or ripple ratio is determined, the required inductance is calculated by:  
VOUT + VD1  
x (1-DMIN  
)
L =  
IOUT x r x fSW  
where  
DMIN is the duty cycle calculated with the maximum input voltage  
fsw is the switching frequency  
IOUT is the maximum output current of 2A  
(13)  
Using IOUT = 2A will minimize the inductor's physical size.  
INDUCTOR CALCULATION EXAMPLE  
Operating conditions for the LM27342 are:  
VIN = 7 - 16V  
fSW = 2 MHz  
VOUT = 3.3V  
VD1 = 0.5V  
IOUT = 2A  
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First the maximum duty cycle is calculated.  
DMAX = (VOUT + VD1) / (VIN + VD1 - VDS  
= (3.3V + 0.5V) / (7V + 0.5V - 0.30V)  
= 0.528  
)
(14)  
Using Figure 36 gives us a recommended ripple ratio = 0.4.  
Now the minimum duty cycle is calculated.  
DMIN = (VOUT + VD1) / (VIN + VD1 - VDS  
)
= (3.3V + 0.5V) / (16V + 0.5V - 0.30V)  
= 0.235  
(15)  
(16)  
The inductance can now be calculated.  
L = (1 - DMIN) x (VOUT + VD1) / (IOUT x r x fsw  
)
= (1 - 0.235) x (3.3V + .5V) / (2A x 0.4 x 2 MHz)  
= 1.817 µH  
This is close to the standard inductance value of 1.8 µH. This leads to a 1% deviation from the recommended  
ripple ratio, which is now 0.4038.  
Finally, we check that the peak current does not reach the minimum current limit of 2.5A.  
ILPK = IOUT x (1 + r / 2)  
= 2A x (1 + .4038 / 2 )  
= 2.404A  
(17)  
The peak current is less than 2.5A, so the DC load specification can be met with this ripple ratio. To design for  
the LM27341 simply replace IOUT = 1.5A in the equations for ILPK and see that ILPK does not exceed the  
LM27341's current limit of 2.0A (min).  
INDUCTOR MATERIAL SELECTION  
When selecting an inductor, make sure that it is capable of supporting the peak output current without saturating.  
Inductor saturation will result in a sudden reduction in inductance and prevent the regulator from operating  
correctly. To prevent the inductor from saturating over the entire -40 °C to 125 °C range, pick an inductor with a  
saturation current higher than the upper limit of ICL listed in the Electrical Characteristics table.  
Ferrite core inductors are recommended to reduce AC loss and fringing magnetic flux. The drawback of ferrite  
core inductors is their quick saturation characteristic. The current limit circuit has a propagation delay and so is  
oftentimes not fast enough to stop a saturated inductor from going above the current limit. This has the potential  
to damage the internal switch. To prevent a ferrite core inductor from getting into saturation, the inductor  
saturation current rating should be higher than the switch current limit ICL. The LM27341/LM27342 is quite robust  
in handling short pulses of current that are a few amps above the current limit. Saturation protection is provided  
by a second current limit which is 30% higher than the cycle by cycle current limit. When the saturation protection  
is triggered the part will turn off the output switch and attempt to soft-start. (When a compromise has to be made,  
pick an inductor with a saturation current just above the lower limit of the ICL.) Be sure to validate the short-circuit  
protection over the intended temperature range.  
An inductor's saturation current is usually lower when hot. So consult the inductor vendor if the saturation current  
rating is only specified at room temperature.  
Soft saturation inductors such as the iron powder types can also be used. Such inductors do not saturate  
suddenly and therefore are safer when there is a severe overload or even shorted output. Their physical sizes  
are usually smaller than the Ferrite core inductors. The downside is their fringing flux and higher power  
dissipation due to relatively high AC loss, especially at high frequencies.  
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INPUT CAPACITOR  
An input capacitor is necessary to ensure that VIN does not drop excessively during switching transients. The  
primary specifications of the input capacitor are capacitance, voltage, RMS current rating, and Equivalent Series  
Inductance (ESL). The recommended input capacitance is 10 µF, although 4.7 µF works well for input voltages  
below 6V. The input voltage rating is specifically stated by the capacitor manufacturer. Make sure to check any  
recommended deratings and also verify if there is any significant change in capacitance at the operating input  
voltage and the operating temperature. The input capacitor maximum RMS input current rating (IRMS-IN) must be  
greater than:  
r2  
12  
IRMS-IN = IOUT  
x
D x  
1 - D +  
where  
r is the ripple ratio defined earlier  
IOUT is the output current  
D is the duty cycle  
(18)  
It can be shown from the above equation that maximum RMS capacitor current occurs when D = 0.5. Always  
calculate the RMS at the point where the duty cycle, D, is closest to 0.5. The ESL of an input capacitor is usually  
determined by the effective cross sectional area of the current path. A large leaded capacitor will have high ESL  
and a 0805 ceramic chip capacitor will have very low ESL. At the operating frequencies of the  
LM27341/LM27342, certain capacitors may have an ESL so large that the resulting impedance (2πfL) will be  
higher than that required to provide stable operation. As a result, surface mount capacitors are strongly  
recommended. Sanyo POSCAP, Tantalum or Niobium, Panasonic SP or Cornell Dubilier Low ESR are all good  
choices for input capacitors and have acceptable ESL. Multilayer ceramic capacitors (MLCC) have very low ESL.  
For MLCCs it is recommended to use X7R or X5R dielectrics. Consult the capacitor manufacturer's datasheet to  
see how rated capacitance varies over operating conditions.  
OUTPUT CAPACITOR  
The output capacitor is selected based upon the desired output ripple and transient response. The LM27341/2's  
loop compensation is designed for ceramic capacitors. A minimum of 22 µF is required at 2 MHz (33 uF at 1  
MHz) while 47 - 100 µF is recommended for improved transient response and higher phase margin. The output  
voltage ripple of the converter is:  
1
)
DVOUT = DiL x (RES  
+
R
8 x fSW x COUT  
(19)  
When using MLCCs, the ESR is typically so low that the capacitive ripple may dominate. When this occurs, the  
output ripple will be approximately sinusoidal and 90° phase shifted from the switching action. Another benefit of  
ceramic capacitors is their ability to bypass high frequency noise. A certain amount of switching edge noise will  
couple through parasitic capacitances in the inductor to the output. A ceramic capacitor will bypass this noise  
while a tantalum will not.  
The transient response is determined by the speed of the control loop and the ability of the output capacitor to  
provide the initial current of a load transient. Capacitance can be increased significantly with little detriment to the  
regulator stability. However, increasing the capacitance provides dimininshing improvement over 100 uF in most  
applications, because the bandwidth of the control loop decreases as output capacitance increases. If improved  
transient performance is required, add a feed forward capacitor. This becomes especially important for higher  
output voltages where the bandwidth of the LM27341/LM27342 is lower. See FEED FORWARD CAPACITOR  
(OPTIONAL) and FREQUENCY SYNCHRONIZATION sections.  
Check the RMS current rating of the capacitor. The RMS current rating of the capacitor chosen must also meet  
the following condition:  
r
IRMS-OUT = IOUT  
x
12  
where  
IOUT is the output current  
r is the ripple ratio.  
(20)  
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CATCH DIODE  
The catch diode (D1) conducts during the switch off-time. A Schottky diode is recommended for its fast switching  
times and low forward voltage drop. The catch diode should be chosen so that its current rating is greater than:  
ID1 = IOUT x (1-D)  
(21)  
The reverse breakdown rating of the diode must be at least the maximum input voltage plus appropriate margin.  
To improve efficiency choose a Schottky diode with a low forward voltage drop.  
BOOST DIODE (OPTIONAL)  
For circuits with input voltages VIN < 5V and duty cycles (D) >0.75V. a small-signal Schottky diode is  
recommended. A good choice is the BAT54 small signal diode. The cathode of the diode is connected to the  
BOOST pin and the anode to a 5V voltage rail.  
BOOST CAPACITOR  
A ceramic 0.1 µF capacitor with a voltage rating of at least 6.3V is sufficient. The X7R and X5R MLCCs provide  
the best performance.  
OUTPUT VOLTAGE  
The output voltage is set using the following equation where R2 is connected between the FB pin and GND, and  
R1 is connected between VOUT and the FB pin. A good starting value for R2 is 1 k.  
VOUT  
x R2  
- 1  
R1=  
VREF  
(22)  
FEED FORWARD CAPACITOR (OPTIONAL)  
A feed forward capacitor CFF can improve the transient response of the converter. Place CFF in parallel with R1.  
The value of CFF should place a zero in the loop response at, or above, the pole of the output capacitor and  
RLOAD. The CFF capacitor will increase the crossover frequency of the design, thus a larger minimum output  
capacitance is required for designs using CFF. CFF should only be used with an output capacitance greater than  
or equal to 44 uF.  
VOUT x COUT  
CFF <=  
IOUT x R1  
(23)  
Calculating Efficiency, and Junction Temperature  
The complete LM27341/LM27342 DC-DC converter efficiency can be calculated in the following manner.  
POUT  
h =  
PIN  
(24)  
Or  
POUT  
h =  
POUT + PLOSS  
(25)  
Calculations for determining the most significant power losses are shown below. Other losses totaling less than  
2% are not discussed.  
Power loss (PLOSS) is the sum of two basic types of losses in the converter, switching and conduction.  
Conduction losses usually dominate at higher output loads, where as switching losses remain relatively fixed and  
dominate at lower output loads. The first step in determining the losses is to calculate the duty cycle (D).  
VOUT + VD1  
D =  
VIN + VD1 - VDS  
(26)  
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VDS is the voltage drop across the internal NFET when it is on, and is equal to:  
VDS = IOUT x RDSON  
(27)  
VD is the forward voltage drop across the Schottky diode. It can be obtained from the Electrical Characteristics  
section of the schottky diode datasheet. If the voltage drop across the inductor (VDCR) is accounted for, the  
equation becomes:  
VOUT + VD1 + VDCR  
D =  
VIN + VD1 - VDS  
(28)  
VDCR usually gives only a minor duty cycle change, and has been omitted in the examples for simplicity.  
SCHOTTKY DIODE CONDUCTION LOSSES  
The conduction losses in the free-wheeling Schottky diode are calculated as follows:  
PDIODE = VD1 x IOUT (1-D)  
(29)  
Often this is the single most significant power loss in the circuit. Care should be taken to choose a Schottky  
diode that has a low forward voltage drop.  
INDUCTOR CONDUCTION LOSSES  
Another significant external power loss is the conduction loss in the output inductor. The equation can be  
simplified to:  
PIND = IOUT2 x RDCR  
(30)  
MOSFET CONDUCTION LOSSES  
The LM27341/LM27342 conduction loss is mainly associated with the internal NFET:  
PCOND = IOUT2 x RDSON x D  
(31)  
MOSFET SWITCHING LOSSES  
Switching losses are also associated with the internal NFET. They occur during the switch on and off transition  
periods, where voltages and currents overlap resulting in power loss. The simplest means to determine this loss  
is to empirically measuring the rise and fall times (10% to 90%) of the switch at the switch node:  
PSWF = 1/2(VIN x IOUT x fSW x tFALL  
)
(32)  
(33)  
(34)  
PSWR = 1/2(VIN x IOUT x fSW x tRISE  
)
PSW = PSWF + PSWR  
Table 1. Typical Rise and Fall Times vs Input Voltage  
VIN  
5V  
tRISE  
8ns  
tFALL  
8ns  
10V  
15V  
9ns  
9ns  
10ns  
10ns  
IC QUIESCENT LOSSES  
Another loss is the power required for operation of the internal circuitry:  
PQ = IQ x VIN  
(35)  
(36)  
IQ is the quiescent operating current, and is typically around 2.4 mA.  
MOSFET DRIVER LOSSES  
The other operating power that needs to be calculated is that required to drive the internal NFET:  
PBOOST = IBOOST x VBOOST  
VBOOST is normally between 3VDC and 5VDC. The IBOOST rms current is dependant on switching frequency fSW  
IBOOST is approximately 8.2 mA at 2 MHz and 4.4 mA at 1 MHz.  
.
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TOTAL POWER LOSSES  
Total power losses are:  
PLOSS = PCOND + PSWR + PSWF + PQ + PBOOST + PDIODE + PIND  
(37)  
(38)  
Losses internal to the LM27341/LM27342 are:  
PINTERNAL = PCOND + PSWR + PSWF + PQ + PBOOST  
EFFICIENCY CALCULATION EXAMPLE  
Operating conditions are:  
VIN = 12V  
VOUT = 3.3V  
VD1 = 0.5V  
IOUT = 2A  
fSW = 2 MHz  
RDCR = 20 mΩ  
Internal Power Losses are:  
PCOND = IOUT2 x RDSON x D  
= 22 x 0.15x 0.314  
= 188 mW  
(39)  
(40)  
(41)  
PSW = (VIN x IOUT x fSW x tFALL  
)
= (12V x 2A x 2 MHz x 10ns)  
= 480 mW  
PQ = IQ x VIN  
= 2.4 mA x 12V  
= 29 mW  
PBOOST = IBOOST x VBOOST  
= 8.2 mA x 4.5V  
= 37 mW  
(42)  
(43)  
PINTERNAL = PCOND + PSW + PQ + PBOOST= 733 mW  
Total Power Losses are:  
PDIODE = VD1 x IOUT (1 - D)  
= 0.5V x 2 x (1 - 0.314)  
= 686 mW  
(44)  
PIND = IOUT2 x RDCR  
= 22 x 20 mΩ  
= 80 mW  
(45)  
(46)  
PLOSS = PINTERNAL + PDIODE + PIND = 1.499 W  
The efficiency can now be estimated as:  
POUT  
6.6 W  
h =  
=
= 81 %  
POUT + PLOSS  
6.6 W + 1.499 W  
(47)  
With this information we can estimate the junction temperature of the LM27341/LM27342.  
CALCULATING THE LM27341/LM27342 JUNCTION TEMPERATURE  
Thermal Definitions:  
TJ = IC junction temperature  
TA = Ambient temperature  
R
θJC = Thermal resistance from IC junction to device case  
θJA = Thermal resistance from IC junction to ambient air  
R
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Figure 37. Cross-Sectional View of Integrated Circuit Mounted on a Printed Circuit Board.  
Heat in the LM27341/LM27342 due to internal power dissipation is removed through conduction and/or  
convection.  
Conduction: Heat transfer occurs through cross sectional areas of material. Depending on the material, the  
transfer of heat can be considered to have poor to good thermal conductivity properties (insulator vs conductor).  
Heat Transfer goes as:  
SiliconLead FramePCB  
Convection: Heat transfer is by means of airflow. This could be from a fan or natural convection. Natural  
convection occurs when air currents rise from the hot device to cooler air.  
Thermal impedance is defined as:  
DT  
Power  
Rq =  
(48)  
Thermal impedance from the silicon junction to the ambient air is defined as:  
TJ - TA  
RqJA  
=
Power  
(49)  
This impedance can vary depending on the thermal properties of the PCB. This includes PCB size, weight of  
copper used to route traces , the ground plane, and the number of layers within the PCB. The type and number  
of thermal vias can also make a large difference in the thermal impedance. Thermal vias are necessary in most  
applications. They conduct heat from the surface of the PCB to the ground plane. Six to nine thermal vias should  
be placed under the exposed pad to the ground plane. Placing more than nine thermal vias results in only a  
small reduction to RθJA for the same copper area. These vias should have 8 mil holes to avoid wicking solder  
away from the DAP. See SNOA401 and SNVA183 for more information on package thermal performance. If a  
compromise for cost needs to be made, the thermal vias for the MSOP-PowerPad package can range from 8-14  
mils, this will increase the possibility of solder wicking.  
To predict the silicon junction temperature for a given application, three methods can be used. The first is useful  
before prototyping and the other two can more accurately predict the junction temperature within the application.  
Method 1:  
The first method predicts the junction temperature by extrapolating a best guess RθJA from the table or graph.  
The tables and graph are for natural convection. The internal dissipation can be calculated using the efficiency  
calculations. This allows the user to make a rough prediction of the junction temperature in their application.  
Methods two and three can later be used to determine the junction temperature more accurately.  
The two tables below have values of RθJA for the SON and the MSOP-PowerPad packages.  
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RθJA values for the MSOP-PowerPad @ 1Watt dissipation:  
Number of Board  
Layers  
Size of Bottom Layer Copper  
Connected to DAP  
Size of Top Layer Copper  
Connected to Dap  
Number of 10 mil  
Thermal Vias  
RθJA  
2
0.25 in2  
0.5625 in2  
1 in2  
1.3225 in2  
3.25 in2  
0.05 in2  
0.05 in2  
0.05 in2  
0.05 in2  
2.25 in2  
8
8
80.6 °C/W  
2
70.9 °C/W  
62.1 °C/W  
54.6 °C/W  
35.3 °C/W  
2
8
2
8
4 (Eval Board)  
14  
RθJA values for the SON @ 1Watt dissipation:  
Number of Board  
Layers  
Size of Bottom Layer Copper  
Connected to DAP  
Size of Top Layer Copper  
Connected to Dap  
Number of 8 mil  
Thermal Vias  
RθJA  
2
0.25 in2  
0.5625 in2  
1 in2  
1.3225 in2  
3.25 in2  
0.05 in2  
0.05 in2  
0.05 in2  
0.05 in2  
2.25 in2  
8
8
78 °C/W  
65.6 °C/W  
58.6 °C/W  
50 °C/W  
2
2
8
2
8
4 (Eval Board)  
15  
30.7 °C/W  
Figure 38. Estimate of Thermal Resistance vs. Ground Copper Area  
Eight Thermal Vias and Natural Convection  
Method 2:  
The second method requires the user to know the thermal impedance of the silicon junction to case. (RθJC) is  
approximately 9.5°C/W for the MSOP-PowerPad package or 9.1°C/W for the SON. The case temperature should  
be measured on the bottom of the PCB at a thermal via directly under the DAP of the LM27341/LM27342. The  
solder resist should be removed from this area for temperature testing. The reading will be more accurate if it is  
taken midway between pins 2 and 9, where the NMOS switch is located. Knowing the internal dissipation from  
the efficiency calculation given previously, and the case temperature (TC) we have:  
TJ - TC  
RqJC  
=
Power  
(50)  
(51)  
Therefore:  
TJ = (RθJC x PLOSS) + TC  
22  
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SNVS497E NOVEMBER 2008REVISED APRIL 2013  
METHOD 2 EXAMPLE  
The operating conditions are the same as the previous Efficiency Calculation:  
VIN = 12V  
VOUT = 3.3V  
VD1 = 0.5V  
IOUT = 2A  
fSW = 2 MHz  
RDCR = 20 mΩ  
Internal Power Losses are:  
PCOND = IOUT2 x RDSON x D  
= 22 x 0.15x 0.314  
= 188 mW  
(52)  
(53)  
(54)  
PSW = (VIN x IOUT x fSW x tFALL  
)
= (12V x 2A x 2 MHz x 10ns)  
= 480 mW  
PQ = IQ x VIN  
= 1.5 mA x 12V  
= 29 mW  
PBOOST = IBOOST x VBOOST  
= 7 mA x 4.5V  
= 37 mW  
(55)  
(56)  
PINTERNAL = PCOND + PSW + PQ + PBOOST = 733 mW  
The junction temperature can now be estimated as:  
TJ = (RθJC x PINTERNAL) + TC  
(57)  
A
Texas Instruments MSOP-PowerPad evaluation board was used to determine the TJ of the  
LM27341/LM27342. The four layer PCB is constructed using FR4 with 2oz copper traces. There is a ground  
plane on the internal layer directly beneath the device, and a ground plane on the bottom layer. The ground  
plane is accessed by fourteen 10 mil vias. The board measures 2in x 2in (50.8mm x 50.8mm). It was placed in a  
container with no airflow. The case temperature measured on this LM27342MY Demo Board was 48.7°C.  
Therefore,  
TJ = (9.5 °C/W x 733 mW) + 48.7 °C  
TJ = 55.66 °C  
(58)  
(59)  
To keep the Junction temperature below 125 °C for this layout, the ambient temperature must stay below 94.33  
°C.  
TA_MAX = TJ_MAX - TJ +TA  
TA_MAX = 125 °C - 55.66 °C + 25 °C  
TA_MAX = 94.33 °C  
(60)  
(61)  
(62)  
Method 3:  
The third method can also give a very accurate estimate of silicon junction temperature. The first step is to  
determine RθJA of the application. The LM27341/LM27342 has over-temperature protection circuitry. When the  
silicon temperature reaches 165 °C, the device stops switching. The protection circuitry has a hysteresis of 15  
°C. Once the silicon temperature has decreased to approximately 150 °C, the device will start to switch again.  
Knowing this, the RθJA for any PCB can be characterized during the early stages of the design by raising the  
ambient temperature in the given application until the circuit enters thermal shutdown. If the SW-pin is monitored,  
it will be obvious when the internal NFET stops switching indicating a junction temperature of 165 °C. We can  
calculate the internal power dissipation from the above methods. All that is needed for calculation is the estimate  
of RDSON at 165 °C. This can be extracted from the graph of RDSON vs. Temperature. The value is approximately  
0.267 ohms. With this, the junction temperature, and the ambient temperature RθJA can be determined.  
165oC - TA  
RqJA  
=
PINTERNAL  
(63)  
Once this is determined, the maximum ambient temperature allowed for a desired junction temperature can be  
found.  
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METHOD 3 EXAMPLE  
The operating conditions are the same as the previous Efficiency Calculation:  
VIN = 12V  
VOUT = 3.3V  
VD1 = 0.5V  
IOUT = 2A  
fSW = 2 MHz  
RDCR = 20 mΩ  
Internal Power Losses are:  
PCOND = IOUT2 x RDSON x D  
= 22 x 0.267x .314  
= 335 mW  
(64)  
(65)  
(66)  
PSW = (VIN x IOUT x fSW x tFALL  
)
= (12V x 2A x 2 MHz x 10nS)  
= 480 mW  
PQ = IQ x VIN  
= 1.5 mA x 12V  
= 29 mW  
PBOOST = IBOOST x VBOOST  
= 7 mA x 4.5V  
= 37 mW  
(67)  
(68)  
PINTERNAL = PCOND + PSW + PQ + PBOOST = 881 mW  
Using a Texas Instruments MSOP-PowerPad evaluation board to determine the RθJA of the board. The four layer  
PCB is constructed using FR4 with 2oz copper traces. There is a ground plane on the internal layer directly  
beneath the device, and a ground plane on the bottom layer. The ground plane is accessed by fourteen 10 mil  
vias. The board measures 2in x 2in (50.8mm x 50.8mm). It was placed in an oven with no forced airflow.  
The ambient temperature was raised to 132 °C, and at that temperature, the device went into thermal shutdown.  
RθJA can now be calculated.  
165oC - 132oC  
= 37.46 oC/W  
RqJA  
=
0.881 W  
(69)  
To keep the Junction temperature below 125 °C for this layout, the ambient temperature must stay below 92 °C.  
TA_MAX = TJ_MAX - (RθJA x PINTERNAL  
)
(70)  
(71)  
(72)  
TA_MAX = 125 °C - (37.46 °C/W x 0.881 W)  
TA_MAX = 92 °C  
This calculation of the maximum ambient temperature is only 2.3 °C different from the calculation using method  
2. The methods described above to find the junction temperature in the MSOP-PowerPad package can also be  
used to calculate the junction temperature in the SON package. The 10-pin SON package has a RθJC = 9.1°C/W,  
while RθJA can vary depending on the layout. RθJA can be calculated in the same manner as described in method  
3.  
PCB Layout Considerations  
COMPACT LAYOUT  
The performance of any switching converter depends as much upon the layout of the PCB as the component  
selection. The following guidelines will help the user design a circuit with maximum rejection of outside EMI and  
minimum generation of unwanted EMI.  
Parasitic inductance can be reduced by keeping the power path components close together and keeping the  
area of the loops small, on which high currents travel. Short, thick traces or copper pours (shapes) are best. In  
particular, the switch node (where L1, D1, and the SW pin connect) should be just large enough to connect all  
three components without excessive heating from the current it carries. The LM27341/LM27342 operates in two  
distinct cycles (see Figure 32) whose high current paths are shown below in Figure 39:  
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SNVS497E NOVEMBER 2008REVISED APRIL 2013  
+
-
Figure 39. Buck Converter Current Loops  
The dark grey, inner loop represents the high current path during the MOSFET on-time. The light grey, outer loop  
represents the high current path during the off-time.  
GROUND PLANE AND SHAPE ROUTING  
The diagram of Figure 39 is also useful for analyzing the flow of continuous current vs. the flow of pulsating  
currents. The circuit paths with current flow during both the on-time and off-time are considered to be continuous  
current, while those that carry current during the on-time or off-time only are pulsating currents. Preference in  
routing should be given to the pulsating current paths, as these are the portions of the circuit most likely to emit  
EMI. The ground plane of a PCB is a conductor and return path, and it is susceptible to noise injection just like  
any other circuit path. The path between the input source and the input capacitor and the path between the catch  
diode and the load are examples of continuous current paths. In contrast, the path between the catch diode and  
the input capacitor carries a large pulsating current. This path should be routed with a short, thick shape,  
preferably on the component side of the PCB. Multiple vias in parallel should be used right at the pad of the input  
capacitor to connect the component side shapes to the ground plane. A second pulsating current loop that is  
often ignored is the gate drive loop formed by the SW and BOOST pins and boost capacitor CBOOST. To minimize  
this loop and the EMI it generates, keep CBOOST close to the SW and BOOST pins.  
FB LOOP  
The FB pin is a high-impedance input, and the loop created by R2, the FB pin and ground should be made as  
small as possible to maximize noise rejection. R2 should therefore be placed as close as possible to the FB and  
GND pins of the IC.  
PCB SUMMARY  
1. Minimize the parasitic inductance by keeping the power path components close together and keeping the  
area of the high-current loops small.  
2. The most important consideration when completing the layout is the close coupling of the GND connections  
of the CIN capacitor and the catch diode D1. These ground connections should be immediately adjacent, with  
multiple vias in parallel at the pad of the input capacitor connected to GND. Place CIN and D1 as close to the  
IC as possible.  
3. Next in importance is the location of the GND connection of the COUT capacitor, which should be near the  
GND connections of CIN and D1.  
4. There should be a continuous ground plane on the copper layer directly beneath the converter. This will  
reduce parasitic inductance and EMI.  
5. The FB pin is a high impedance node and care should be taken to make the FB trace short to avoid noise  
pickup and inaccurate regulation. The feedback resistors should be placed as close as possible to the IC,  
with the GND of R2 placed as close as possible to the GND of the IC. The VOUT trace to R1 should be routed  
away from the inductor and any other traces that are switching.  
6. High AC currents flow through the VIN, SW and VOUT traces, so they should be as short and wide as  
possible. However, making the traces wide increases radiated noise, so the layout designer must make this  
trade-off. Radiated noise can be decreased by choosing a shielded inductor.  
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The remaining components should also be placed as close as possible to the IC. Please see Application Note  
AN-1229 SNVA054 for further considerations and the LM27342 demo board as an example of a four-layer  
layout.  
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SNVS497E NOVEMBER 2008REVISED APRIL 2013  
LM27341/LM27342 Circuit Examples  
PVIN  
AVIN  
BOOST  
SW  
VIN  
C2  
L1  
C1  
VOUT  
C3  
D1  
C4  
LM27341/2  
ON  
EN  
OFF  
R1  
SYNC  
FB  
CLK  
2 MHz  
GND / DAP  
R2  
C5  
Figure 40. VIN = 7 - 16V, VOUT = 5V, fSW = 2 MHz, IOUT = Full Load  
Figure 41. LM27342 Efficiency vs. Load Current  
Figure 42. Transient Response  
IOUT = 100 mA - 2A @ slewrate = 2A / µs  
Table 2. Bill of Materials for Figure 40  
Part Name  
Buck Regulator  
CPVIN  
Part ID Part Value  
Part Number  
Manufacturer  
TI  
U1  
C1  
C2  
C3  
C4  
C5  
D1  
L1  
1.5 or 2A Buck Regulator  
LM27341 / LM27342  
GRM32DR71E106KA12L  
GRM188R71C104KA01D  
C3225X7R1C226K  
C3225X7R1C226K  
0603ZC184KAT2A  
CMS06  
10 µF  
Murata  
Murata  
TDK  
CBOOST  
0.1 µF  
COUT  
22 µF  
COUT  
22 µF  
TDK  
CFF  
0.18 µF  
AVX  
Catch Diode  
Inductor  
Schottky Diode Vf = 0.32V  
Toshiba  
Sumida  
Vishay  
Vishay  
2.2 µH  
560Ω  
140Ω  
CDRHD5D28RHPNP  
CRCW0603560RFKEA  
CRCW0603140RFKEA  
Feedback Resistor  
Feedback Resistor  
R1  
R2  
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PVIN  
BOOST  
SW  
VIN  
C2  
D1  
AVIN  
L1  
C1  
VOUT  
C3  
C4  
LM27341/2  
ON  
EN  
OFF  
R1  
SYNC  
FB  
CLK  
1 MHz  
GND / DAP  
R2  
C5  
Figure 43. VIN = 7 - 16V, VOUT = 5V, fSW = 1 MHz, IOUT = Full Load  
Figure 44. LM27342 Efficiency vs. Load Current  
Figure 45. Transient Response  
IOUT = 100 mA - 2A @ slewrate = 2A / µs  
Table 3. Bill of Materials for Figure 43  
Part Name  
Buck Regulator  
CPVIN  
Part ID Part Value  
Part Number  
Manufacturer  
TI  
U1  
C1  
C2  
C3  
C4  
C5  
D1  
L1  
1.5 or 2A Buck Regulator  
LM27341 / LM27342  
GRM32DR71E106KA12L  
GRM188R71C104KA01D  
GRM32ER61A476KE20L  
C3225X7R1C226K  
C0603C274K4RACTU  
CMS06  
10 µF  
Murata  
Murata  
Murata  
TDK  
CBOOST  
0.1 µF  
COUT  
47 µF  
COUT  
22 µF  
CFF  
0. 27 µF  
Kemet  
Toshiba  
Sumida  
Vishay  
Vishay  
Catch Diode  
Inductor  
Schottky Diode Vf = 0.32V  
3.3 µH  
560Ω  
140Ω  
CDRH6D26HPNP  
Feedback Resistor  
Feedback Resistor  
R1  
R2  
CRCW0603560RFKEA  
CRCW0603140RFKEA  
28  
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SNVS497E NOVEMBER 2008REVISED APRIL 2013  
PVIN  
AVIN  
BOOST  
SW  
VIN  
C2  
L1  
C1  
VOUT  
C3  
D1  
C4  
LM27341/2  
ON  
EN  
OFF  
R1  
SYNC  
FB  
CLK  
2 MHz  
GND / DAP  
R2  
C5  
Figure 46. VIN = 5 - 16V, VOUT = 3.3V, fSW = 2 MHz, IOUT = Full Load  
Figure 47. LM27342 Efficiency vs. Load Current  
Figure 48. Transient Response  
IOUT = 100 mA - 2A @ slewrate = 2A / µs  
Table 4. Bill of Materials for Figure 46  
Part Name  
Buck Regulator  
CPVIN  
Part ID Part Value  
Part Number  
Manufacturer  
TI  
U1  
C1  
C2  
C3  
C4  
C5  
D1  
L1  
1.5 or 2A Buck Regulator  
LM27341 / LM27342  
GRM32DR71E106KA12L  
GRM188R71C104KA01D  
C3225X7R1C226K  
C3225X7R1C226K  
0603ZC184KAT2A  
CMS06  
10 µF  
Murata  
Murata  
TDK  
CBOOST  
0.1 µF  
COUT  
22 µF  
COUT  
22 µF  
TDK  
CFF  
0.18 µF  
AVX  
Catch Diode  
Inductor  
Schottky Diode Vf = 0.32V  
Toshiba  
Sumida  
Vishay  
Vishay  
1.5 µH  
430 Ω  
187 Ω  
CDRH5D18BHPNP  
CRCW0603430RFKEA  
CRCW0603187RFKEA  
Feedback Resistor  
Feedback Resistor  
R1  
R2  
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PVIN  
BOOST  
SW  
VIN  
C2  
D1  
AVIN  
L1  
C1  
EN  
VOUT  
C3  
C4  
LM27341/2  
R1  
SYNC  
FB  
GND / DAP  
R2  
Figure 49. VIN = 5 - 16V, VOUT = 3.3V, fSW = 2 MHz, IOUT = Full Load  
Figure 50. LM27342 Efficiency vs. Load Current  
Figure 51. Transient Response  
IOUT = 100 mA - 2A @ slewrate = 2A / µs  
Table 5. Bill of Materials for Figure 49  
Part Name  
Buck Regulator  
CPVIN  
Part ID Part Value  
Part Number  
Manufacturer  
TI  
U1  
C1  
C2  
C3  
C4  
D1  
L1  
1.5 or 2A Buck Regulator  
LM27341 / LM27342  
GRM32DR71E106KA12L  
GRM188R71C104KA01D  
C3225X7R1C226K  
C3225X7R1C226K  
CMS06  
10 µF  
Murata  
Murata  
TDK  
CBOOST  
0.1 µF  
COUT  
22 µF  
COUT  
22 µF  
TDK  
Catch Diode  
Inductor  
Schottky Diode Vf = 0.32V  
Toshiba  
Sumida  
Vishay  
Vishay  
1.5 µH  
430 Ω  
187 Ω  
CDRH5D18BHPNP  
CRCW0603430RFKEA  
CRCW0603187RFKEA  
Feedback Resistor  
Feedback Resistor  
R1  
R2  
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SNVS497E NOVEMBER 2008REVISED APRIL 2013  
PVIN  
AVIN  
BOOST  
SW  
VIN  
C2  
L1  
C1  
VOUT  
C3  
D1  
C4  
LM27341/2  
ON  
EN  
OFF  
R1  
SYNC  
FB  
CLK  
1 MHz  
GND / DAP  
R2  
C5  
Figure 52. VIN = 5 - 16V, VOUT = 3.3V, fSW = 1 MHz, IOUT = Full Load  
Figure 53. LM27342 Efficiency vs. Load Current  
Figure 54. Transient Response  
IOUT = 100 mA - 2A @ slewrate = 2A / µs  
Table 6. Bill of Materials for Figure 52  
Part Name  
Buck Regulator  
CPVIN  
Part ID Part Value  
Part Number  
Manufacturer  
TI  
U1  
C1  
C2  
C3  
C4  
C5  
D1  
L1  
1.5 or 2A Buck Regulator  
LM27341 / LM27342  
GRM32DR71E106KA12L  
GRM188R71C104KA01D  
GRM32ER61A476KE20L  
C3225X7R1C226K  
C0603C274K4RACTU  
CMS06  
10 µF  
Murata  
Murata  
Murata  
TDK  
CBOOST  
0.1 µF  
COUT  
47 µF  
COUT  
22 µF  
CFF  
0.27 µF  
Kemet  
Toshiba  
Sumida  
Vishay  
Vishay  
Catch Diode  
Inductor  
Schottky Diode Vf = 0.32V  
2.7 µH  
430 Ω  
187 Ω  
CDRH5D18BHPNP  
CRCW0603430RFKEA  
CRCW0603187RFKEA  
Feedback Resistor  
Feedback Resistor  
R1  
R2  
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www.ti.com  
PVIN  
BOOST  
SW  
VIN  
C2  
D1  
AVIN  
L1  
C1  
EN  
VOUT  
C3  
C4  
LM27341/2  
R1  
SYNC  
FB  
GND / DAP  
R2  
Figure 55. VIN = 3.3 - 16V, VOUT = 1.8V, fSW = 2 MHz, IOUT = Full Load  
Figure 56. LM27342 Efficiency vs. Load Current  
Figure 57. Transient Response  
IOUT = 100 mA - 2A @ slewrate = 2A / µs  
Table 7. Bill of Materials for Figure 55  
Part Name  
Buck Regulator  
CPVIN  
Part ID Part Value  
Part Number  
Manufacturer  
TI  
U1  
C1  
C2  
C3  
C4  
D1  
L1  
1.5 or 2A Buck Regulator  
LM27341 / LM27342  
GRM32DR71E106KA12L  
GRM188R71C104KA01D  
C3225X7R1C226K  
C3225X7R1C226K  
CMS06  
10 µF  
Murata  
Murata  
TDK  
CBOOST  
0.1 µF  
COUT  
22 µF  
COUT  
22 µF  
TDK  
Catch Diode  
Inductor  
Schottky Diode Vf = 0.32V  
Toshiba  
Sumida  
Vishay  
Vishay  
1.0 µH  
12 kΩ  
15 kΩ  
CDRH5D18BHPNP  
CRCW060312K0FKEA  
CRCW060315K0FKEA  
Feedback Resistor  
Feedback Resistor  
R1  
R2  
32  
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SNVS497E NOVEMBER 2008REVISED APRIL 2013  
PVIN  
AVIN  
BOOST  
SW  
VIN  
C2  
L1  
C1  
VOUT  
C3  
D1  
C4  
LM27341/2  
ON  
EN  
OFF  
R1  
SYNC  
FB  
CLK  
1 MHz  
GND / DAP  
R2  
C5  
Figure 58. VIN = 3.3 - 16V, VOUT = 1.8V, fSW = 1 MHz, IOUT = Full Load  
Figure 59. LM27342 Efficiency vs. Load Current  
Figure 60. Transient Response  
IOUT = 100 mA - 2A @ slewrate = 2A / µs  
Table 8. Bill of Materials for Figure 58  
Part Name  
Buck Regulator  
CPVIN  
Part ID Part Value  
Part Number  
Manufacturer  
TI  
U1  
C1  
C2  
C3  
C4  
C5  
D1  
L1  
1.5 or 2A Buck Regulator  
LM27341 / LM27342  
GRM32DR71E106KA12L  
GRM188R71C104KA01D  
C3225X7R1C226K  
C3225X7R1C226K  
GRM188R71H392KA01D  
CMS06  
10 µF  
Murata  
Murata  
TDK  
CBOOST  
0.1 µF  
COUT  
22 uF  
COUT  
22 uF  
TDK  
CFF  
3.9 nF  
Murata  
Toshiba  
Sumida  
Vishay  
Vishay  
Catch Diode  
Inductor  
Schottky Diode Vf = 0.32V  
1.8 µH  
12 kΩ  
15 kΩ  
CDRH5D18BHPNP  
CRCW060312K0FKEA  
CRCW060315K0FKEA  
Feedback Resistor  
Feedback Resistor  
R1  
R2  
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Product Folder Links: LM27341 LM27342 LM27341-Q1 LM27342-Q1  
 
LM27341, LM27342, LM27341-Q1, LM27342-Q1  
SNVS497E NOVEMBER 2008REVISED APRIL 2013  
www.ti.com  
PVIN  
BOOST  
SW  
VIN  
C2  
D1  
AVIN  
L1  
C1  
VOUT  
C3  
C4  
LM27341/2  
ON  
EN  
OFF  
R1  
SYNC  
FB  
CLK  
2 MHz  
GND / DAP  
R2  
C5  
Figure 61. VIN = 3.3 - 9V, VOUT = 1.2V, fSW = 2 MHz, IOUT = Full Load  
Figure 62. LM27342 Efficiency vs. Load Current  
Figure 63. Transient Response  
IOUT = 100 mA - 2A @ slewrate = 2A / µs  
Table 9. Bill of Materials for Figure 61  
Part Name  
Buck Regulator  
CPVIN  
Part ID Part Value  
Part Number  
Manufacturer  
TI  
U1  
C1  
C2  
C3  
C4  
C5  
D1  
L1  
1.5 or 2A Buck Regulator  
LM27341 / LM27342  
GRM32DR71E106KA12L  
GRM188R71C104KA01D  
GRM32ER61A476KE20L  
C3225X7R1C226K  
10 µF  
Murata  
Murata  
Murata  
TDK  
CBOOST  
0.1 µF  
COUT  
47 µF  
COUT  
22 µF  
CFF  
NOT MOUNTED  
Schottky Diode Vf = 0.32V  
0.56 µH  
Catch Diode  
Inductor  
CMS06  
Toshiba  
Sumida  
Vishay  
Vishay  
CDRH2D18/HPNP  
CRCW06031K02FKEA  
CRCW06035K10FKEA  
Feedback Resistor  
Feedback Resistor  
R1  
R2  
1.02 kΩ  
5.10 kΩ  
34  
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Product Folder Links: LM27341 LM27342 LM27341-Q1 LM27342-Q1  
 
 
LM27341, LM27342, LM27341-Q1, LM27342-Q1  
www.ti.com  
SNVS497E NOVEMBER 2008REVISED APRIL 2013  
REVISION HISTORY  
Changes from Revision D (April 2013) to Revision E  
Page  
Changed layout of National Data Sheet to TI format .......................................................................................................... 34  
Copyright © 2008–2013, Texas Instruments Incorporated  
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Product Folder Links: LM27341 LM27342 LM27341-Q1 LM27342-Q1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
8-Oct-2015  
PACKAGING INFORMATION  
Orderable Device  
LM27341MY/NOPB  
LM27341QMY/NOPB  
LM27341QMYX/NOPB  
LM27341SD/NOPB  
LM27342MY/NOPB  
LM27342MYX/NOPB  
LM27342QMY/NOPB  
LM27342QMYX/NOPB  
LM27342SD/NOPB  
LM27342SDX/NOPB  
Status Package Type Package Pins Package  
Eco Plan  
Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(6)  
(3)  
(4/5)  
ACTIVE  
MSOP-  
PowerPAD  
DGQ  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
1000  
Green (RoHS  
& no Sb/Br)  
CU SN  
CU SN  
CU SN  
CU SN  
CU SN  
CU SN  
CU SN  
CU SN  
CU SN  
CU SN  
Level-3-260C-168 HR  
Level-3-260C-168 HR  
Level-3-260C-168 HR  
Level-1-260C-UNLIM  
Level-3-260C-168 HR  
Level-3-260C-168 HR  
Level-3-260C-168 HR  
Level-3-260C-168 HR  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
SSCB  
SSJB  
SSJB  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
MSOP-  
PowerPAD  
DGQ  
DGQ  
DSC  
DGQ  
DGQ  
DGQ  
DGQ  
DSC  
DSC  
1000  
3500  
1000  
1000  
3500  
1000  
3500  
1000  
4500  
Green (RoHS  
& no Sb/Br)  
MSOP-  
PowerPAD  
Green (RoHS  
& no Sb/Br)  
WSON  
Green (RoHS  
& no Sb/Br)  
L231B  
SSCA  
SSCA  
SSJA  
SSJA  
L231A  
L231A  
MSOP-  
PowerPAD  
Green (RoHS  
& no Sb/Br)  
MSOP-  
PowerPAD  
Green (RoHS  
& no Sb/Br)  
MSOP-  
PowerPAD  
Green (RoHS  
& no Sb/Br)  
MSOP-  
PowerPAD  
Green (RoHS  
& no Sb/Br)  
WSON  
Green (RoHS  
& no Sb/Br)  
WSON  
Green (RoHS  
& no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
8-Oct-2015  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish  
value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF LM27341, LM27341-Q1, LM27342, LM27342-Q1 :  
Catalog: LM27341, LM27342  
Automotive: LM27341-Q1, LM27342-Q1  
NOTE: Qualified Version Definitions:  
Catalog - TI's standard catalog product  
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
2-Sep-2015  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
1000  
1000  
3500  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LM27341MY/NOPB  
LM27341QMY/NOPB  
LM27341QMYX/NOPB  
MSOP-  
Power  
PAD  
DGQ  
DGQ  
DGQ  
10  
10  
10  
178.0  
178.0  
330.0  
12.4  
12.4  
12.4  
5.3  
5.3  
5.3  
3.4  
3.4  
3.4  
1.4  
1.4  
1.4  
8.0  
8.0  
8.0  
12.0  
12.0  
12.0  
Q1  
Q1  
Q1  
MSOP-  
Power  
PAD  
MSOP-  
Power  
PAD  
LM27341SD/NOPB  
LM27342MY/NOPB  
WSON  
DSC  
DGQ  
10  
10  
1000  
1000  
178.0  
178.0  
12.4  
12.4  
3.3  
5.3  
3.3  
3.4  
1.0  
1.4  
8.0  
8.0  
12.0  
12.0  
Q1  
Q1  
MSOP-  
Power  
PAD  
LM27342MYX/NOPB  
LM27342QMY/NOPB  
LM27342QMYX/NOPB  
MSOP-  
Power  
PAD  
DGQ  
DGQ  
DGQ  
10  
10  
10  
3500  
1000  
3500  
330.0  
178.0  
330.0  
12.4  
12.4  
12.4  
5.3  
5.3  
5.3  
3.4  
3.4  
3.4  
1.4  
1.4  
1.4  
8.0  
8.0  
8.0  
12.0  
12.0  
12.0  
Q1  
Q1  
Q1  
MSOP-  
Power  
PAD  
MSOP-  
Power  
PAD  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
2-Sep-2015  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LM27342SD/NOPB  
LM27342SDX/NOPB  
WSON  
WSON  
DSC  
DSC  
10  
10  
1000  
4500  
178.0  
330.0  
12.4  
12.4  
3.3  
3.3  
3.3  
3.3  
1.0  
1.0  
8.0  
8.0  
12.0  
12.0  
Q1  
Q1  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LM27341MY/NOPB  
LM27341QMY/NOPB  
MSOP-PowerPAD  
MSOP-PowerPAD  
DGQ  
DGQ  
DGQ  
DSC  
DGQ  
DGQ  
DGQ  
DGQ  
DSC  
DSC  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
1000  
1000  
3500  
1000  
1000  
3500  
1000  
3500  
1000  
4500  
213.0  
213.0  
367.0  
210.0  
213.0  
367.0  
213.0  
367.0  
210.0  
367.0  
191.0  
191.0  
367.0  
185.0  
191.0  
367.0  
191.0  
367.0  
185.0  
367.0  
55.0  
55.0  
35.0  
35.0  
55.0  
35.0  
55.0  
35.0  
35.0  
35.0  
LM27341QMYX/NOPB MSOP-PowerPAD  
LM27341SD/NOPB  
LM27342MY/NOPB  
LM27342MYX/NOPB  
LM27342QMY/NOPB  
WSON  
MSOP-PowerPAD  
MSOP-PowerPAD  
MSOP-PowerPAD  
LM27342QMYX/NOPB MSOP-PowerPAD  
LM27342SD/NOPB  
LM27342SDX/NOPB  
WSON  
WSON  
Pack Materials-Page 2  
MECHANICAL DATA  
DGQ0010A  
MUC10A (Rev A)  
BOTTOM VIEW  
www.ti.com  
PACKAGE OUTLINE  
DSC0010B  
WSON - 0.8 mm max height  
S
C
A
L
E
4
.
0
0
0
PLASTIC SMALL OUTLINE - NO LEAD  
3.1  
2.9  
B
A
PIN 1 INDEX AREA  
3.1  
2.9  
C
0.8 MAX  
SEATING PLANE  
0.08  
0.05  
0.00  
1.2±0.1  
(0.2) TYP  
8X 0.5  
6
5
2X  
2
2±0.1  
1
10  
0.3  
0.2  
10X  
PIN 1 ID  
(OPTIONAL)  
0.1  
C A  
C
B
0.5  
0.4  
10X  
0.05  
4214926/A 07/2014  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DSC0010B  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
(1.2)  
10X (0.65)  
SYMM  
10  
1
10X (0.25)  
SYMM  
(2)  
(0.75) TYP  
8X (0.5)  
5
6
(0.35) TYP  
(
0.2) TYP  
VIA  
(2.75)  
LAND PATTERN EXAMPLE  
SCALE:20X  
0.07 MIN  
ALL AROUND  
0.07 MAX  
ALL AROUND  
METAL  
METAL  
UNDER  
SOLDER MASK  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4214926/A 07/2014  
NOTES: (continued)  
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature  
number SLUA271 (www.ti.com/lit/slua271).  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DSC0010B  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
10X (0.65)  
SYMM  
METAL  
TYP  
10X (0.25)  
(0.55)  
SYMM  
(0.89)  
8X (0.5)  
(1.13)  
(2.75)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
EXPOSED PAD  
84% PRINTED SOLDER COVERAGE BY AREA  
SCALE:25X  
4214926/A 07/2014  
NOTES: (continued)  
5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
www.ti.com  
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