LM2832 [TI]
高频 2.0A 负载 - 降压直流/直流稳压器;
| 型号： | LM2832 |
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TEXAS INSTRUMENTS |
| 描述： | 高频 2.0A 负载 - 降压直流/直流稳压器 稳压器 |
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LM2832
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SNVS455A –AUGUST 2006–REVISED APRIL 2013
LM2832 High Frequency 2.0A Load - Step-Down DC-DC Regulator
Check for Samples: LM2832
1
FEATURES
DESCRIPTION
The LM2832 regulator is a monolithic, high frequency,
PWM step-down DC/DC converter in a 6 Pin WSON
and a 8 Pin eMSOP-PowerPAD package. It provides
all the active functions to provide local DC/DC
conversion with fast transient response and accurate
regulation in the smallest possible PCB area. With a
minimum of external components, the LM2832 is
easy to use. The ability to drive 2.0A loads with an
internal 150 mΩ PMOS switch using state-of-the-art
0.5 µm BiCMOS technology results in the best power
density available. The world-class control circuitry
allows on-times as low as 30ns, thus supporting
exceptionally high frequency conversion over the
entire 3V to 5.5V input operating range down to the
minimum output voltage of 0.6V. Switching frequency
is internally set to 550 kHz, 1.6 MHz, or 3.0 MHz,
allowing the use of extremely small surface mount
inductors and chip capacitors. Even though the
operating frequency is high, efficiencies up to 93%
are easy to achieve. External shutdown is included,
featuring an ultra-low stand-by current of 30 nA. The
LM2832 utilizes current-mode control and internal
compensation to provide high-performance regulation
over a wide range of operating conditions. Additional
features include internal soft-start circuitry to reduce
inrush current, pulse-by-pulse current limit, thermal
shutdown, and output over-voltage protection.
2
•
•
•
•
Input Voltage Range of 3.0V to 5.5V
Output Voltage Range of 0.6V to 4.5V
2.0A Output Current
High Switching Frequencies
–
–
–
1.6MHz (LM2832X)
0.55MHz (LM2832Y)
3.0MHz (LM2832Z)
•
•
•
•
•
•
150mΩ PMOS Switch
0.6V, 2% Internal Voltage Reference
Internal Soft-Start
Current Mode, PWM Operation
Thermal Shutdown
Over Voltage Protection
APPLICATIONS
•
•
•
•
•
Local 5V to Vcore Step-Down Converters
Core Power in HDDs
Set-Top Boxes
USB Powered Devices
DSL Modems
Typical Application Circuit
FB
EN
GND
SW
LM2832
R3
L1
V
O
= 3.3V @ 2.0A
V
IN
V
= 5V
IN
R1
R2
C1
D1
C2
C3
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2013, Texas Instruments Incorporated
LM2832
SNVS455A –AUGUST 2006–REVISED APRIL 2013
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Connection Diagrams
1
2
3
4
8
7
6
5
SW
VIND
VINA
FB
1
2
6
5
4
EN
GND
DAP
GND
FB
VINA
VIND
DAP
SW
3
GND
EN
GND
Figure 1. 6-Pin WSON
Figure 2. 8-Pin eMSOP-PowerPAD
PIN DESCRIPTIONS 8-PIN eMSOP-PowerPAD
Pin
Name
VIND
VINA
GND
Function
1
2
Power Input supply.
Control circuitry supply voltage. Connect VINA to VIND on PC board.
3, 5, 7
Signal and power ground pin. Place the bottom resistor of the feedback network as close as
possible to this pin.
4
EN
Enable control input. Logic high enables operation. Do not allow this pin to float or be greater than
VIN + 0.3V.
6
8
FB
SW
Feedback pin. Connect to external resistor divider to set output voltage.
Output switch. Connect to the inductor and catch diode.
DAP
Die Attach Pad
Connect to system ground for low thermal impedance, but it cannot be used as a primary GND
connection.
PIN DESCRIPTIONS 6-PIN WSON
Function
Pin
1
Name
FB
Feedback pin. Connect to external resistor divider to set output voltage.
2
GND
Signal and power ground pin. Place the bottom resistor of the feedback network as close as
possible to this pin.
3
4
5
6
SW
VIND
VINA
EN
Output switch. Connect to the inductor and catch diode.
Power Input supply.
Control circuitry supply voltage. Connect VINA to VIND on PC board.
Enable control input. Logic high enables operation. Do not allow this pin to float or be greater than
VINA + 0.3V.
DAP
Die Attach Pad
Connect to system ground for low thermal impedance, but it cannot be used as a primary GND
connection.
2
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Absolute Maximum Ratings(1) (2)
VIN
-0.5V to 7V
-0.5V to 3V
-0.5V to 7V
-0.5V to 7V
2kV
FB Voltage
EN Voltage
SW Voltage
ESD Susceptibility
Junction Temperature(3)
Storage Temperature
Soldering Information
150°C
−65°C to +150°C
220°C
Infrared or Convection Reflow (15 sec)
(1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating Range indicates conditions for
which the device is intended to be functional, but does not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) Thermal shutdown will occur if the junction temperature exceeds the maximum junction temperature of the device.
Operating Ratings
VIN
3V to 5.5V
Junction Temperature
−40°C to +125°C
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Electrical Characteristics
VIN = 5V unless otherwise indicated under the Conditions column. Limits in standard type are for TJ = 25°C only; limits in
boldface type apply over the junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits are ensured
through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are
provided for reference purposes only.
Symbol
Parameter
Conditions
Min
Typ
Max
0.612
0.616
Units
WSON-6 Package
0.588
0.584
0.600
0.600
VFB
Feedback Voltage
V
eMSOP-PowerPAD-8
Package
ΔVFB/VIN
Feedback Voltage Line Regulation
Feedback Input Bias Current
VIN = 3V to 5V
0.02
0.1
2.73
2.3
0.43
1.6
0.55
3.0
94
%/V
nA
V
IB
100
VIN Rising
VIN Falling
2.90
Undervoltage Lockout
UVLO Hysteresis
UVLO
FSW
1.85
V
LM2832-X
LM2832-Y
LM2832-Z
LM2832-X
LM2832-Y
LM2832-Z
LM2832-X
LM2832-Y
LM2832-Z
WSON-6 Package
1.2
0.4
2.25
86
1.95
0.7
Switching Frequency
Maximum Duty Cycle
MHz
3.75
DMAX
90
96
%
82
90
5
DMIN
Minimum Duty Cycle
Switch On Resistance
2
%
7
150
155
RDS(ON)
mΩ
eMSOP-PowerPAD-8
Package
240
0.4
ICL
Switch Current Limit
Shutdown Threshold Voltage
Enable Threshold Voltage
Switch Leakage
VIN = 3.3V
2.4
1.8
3.25
A
V
VEN_TH
ISW
IEN
100
100
3.3
2.8
4.3
30
nA
nA
Enable Pin Current
Sink/Source
LM2832X VFB = 0.55
LM2831Y VFB = 0.55
LM2832Z VFB = 0.55
All Options VEN = 0V
5
Quiescent Current (switching)
4.5
6.5
mA
IQ
Quiescent Current (shutdown)
nA
Junction to Ambient
0 LFPM Air Flow(1)
WSON-6 and eMSOP-
PowerPAD-8 Packages
80
θJA
°C/W
WSON-6 and eMSOP-
PowerPAD-8 Packages
18
θJC
Junction to Case(1)
°C/W
°C
TSD
Thermal Shutdown Temperature
165
(1) Applies for packages soldered directly onto a 3” x 3” PC board with 2oz. copper on 4 layers in still air.
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Typical Performance Characteristics
All curves taken at VIN = 5.0V with configuration in typical application circuit shown in Applications Information section of this
datasheet. TJ = 25°C, unless otherwise specified.
η vs Load "X, Y and Z" Vin = 3.3V, Vo = 1.8V
η vs Load "X" Vin = 5V, Vo = 1.8V & 3.3V
Figure 3.
Figure 4.
η vs Load - "Y" Vin = 5V, Vo = 3.3V & 1.8V
η vs Load "Z" Vin = 5V, Vo = 3.3V & 1.8V
Figure 5.
Figure 6.
Load Regulation Vin = 3.3V, Vo = 1.8V (All Options)
Load Regulation Vin = 5V, Vo = 1.8V (All Options)
Figure 7.
Figure 8.
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Typical Performance Characteristics (continued)
All curves taken at VIN = 5.0V with configuration in typical application circuit shown in Applications Information section of this
datasheet. TJ = 25°C, unless otherwise specified.
Load Regulation Vin = 5V, Vo = 3.3V (All Options)
Oscillator Frequency vs Temperature - "X"
1.81
1.76
1.71
1.66
1.61
1.56
1.51
1.46
1.41
1.36
-45 -40 -10 20 50 80 110 125 130
TEMPERATURE (ºC)
Figure 9.
Figure 10.
Oscillator Frequency vs Temperature - "Y"
Oscillator Frequency vs Temperature - "Z"
3.45
0.60
3.35
3.25
3.15
3.05
2.95
2.85
2.75
0.58
0.56
0.54
0.52
0.50
0.48
2.65
2.55
0.46
-45 -40 -10 20 50 80 110 125 130
-45 -40 -10 20 50 80 110 125 130
TEMPERATURE (ºC)
TEMPERATURE (°C)
Figure 11.
Figure 12.
Current Limit vs Temperature Vin = 3.3V
RDSON vs Temperature (WSON-6 Package)
3800
3700
3600
3500
3400
3300
3200
3100
3000
2900
2800
-45 -40 -10 20 50 80 110 125 130
TEMPERATURE (oC)
Figure 13.
Figure 14.
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Typical Performance Characteristics (continued)
All curves taken at VIN = 5.0V with configuration in typical application circuit shown in Applications Information section of this
datasheet. TJ = 25°C, unless otherwise specified.
RDSON vs Temperature (eMSOP-PowerPAD-8 Package)
LM2832X IQ (Quiescent Current)
3.6
3.5
3.4
3.3
3.2
3.1
3.0
-45 -40 -10 20 50 80 110 125 130
TEMPERATURE (ºC)
Figure 15.
Figure 16.
LM2832Y IQ (Quiescent Current)
LM2832Z IQ (Quiescent Current)
2.65
4.6
2.6
2.55
2.5
4.5
4.4
4.3
4.2
4.1
4.0
2.45
2.4
2.35
2.3
2.25
2.2
2.15
-45
-40 -10 20 50 80 110 125 130
TEMPERATURE (°C)
-45 -40 -10 20 50 80 110 125 130
TEMPERATURE (ºC)
Figure 17.
Figure 18.
Line Regulation Vo = 1.8V, Io = 500mA
VFB vs Temperature
0.610
0.605
0.600
0.595
0.590
-45 -40 -10 20 50 80 110 125 130
TEMPERATURE (ºC)
Figure 19.
Figure 20.
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Typical Performance Characteristics (continued)
All curves taken at VIN = 5.0V with configuration in typical application circuit shown in Applications Information section of this
datasheet. TJ = 25°C, unless otherwise specified.
Gain vs Frequency (Vin = 5V, Vo = 1.2V @ 1A)
Phase Plot vs Frequency (Vin = 5V, Vo = 1.2V @ 1A)
Figure 21.
Figure 22.
Simplified Block Diagram
EN
VIN
+
I
SENSE
-
Thermal
ENABLE and UVLO
SHDN
I
LIMIT
OVP
SHDN
-
+
1.15x V
REF
RampArtificial
Control Logic
S
R
R
I
SENSE
+
1.6 MHz
+
+
-
-
PFET
Q
FB
+
DRIVER
Internal -Comp
SW
V
= 0.6V
REF
SOFT-START
Internal - LDO
GND
Figure 23.
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APPLICATIONS INFORMATION
THEORY OF OPERATION
The LM2832 is a constant frequency PWM buck regulator IC that delivers a 2.0A load current. The regulator has
a preset switching frequency of 1.6MHz or 3.0MHz. This high frequency allows the LM2832 to operate with small
surface mount capacitors and inductors, resulting in a DC/DC converter that requires a minimum amount of
board space. The LM2832 is internally compensated, so it is simple to use and requires few external
components. The LM2832 uses current-mode control to regulate the output voltage. The following operating
description of the LM2832 will refer to the Simplified Block Diagram (Figure 23) and to the waveforms in
Figure 24. The LM2832 supplies a regulated output voltage by switching the internal PMOS control switch at
constant frequency and variable duty cycle. A switching cycle begins at the falling edge of the reset pulse
generated by the internal oscillator. When this pulse goes low, the output control logic turns on the internal
PMOS control switch. During this on-time, the SW pin voltage (VSW) swings up to approximately VIN, and the
inductor current (IL) increases with a linear slope. IL is measured by the current sense amplifier, which generates
an output proportional to the switch current. The sense signal is summed with the regulator’s corrective ramp and
compared to the error amplifier’s output, which is proportional to the difference between the feedback voltage
and VREF. When the PWM comparator output goes high, the output switch turns off until the next switching cycle
begins. During the switch off-time, inductor current discharges through the Schottky catch diode, which forces the
SW pin to swing below ground by the forward voltage (VD) of the Schottky catch diode. The regulator loop
adjusts the duty cycle (D) to maintain a constant output voltage.
V
SW
D = T /T
ON SW
V
IN
SW
Voltage
T
T
OFF
ON
0
D
t
V
T
SW
I
L
I
PK
Inductor
Current
0
t
Figure 24. Typical Waveforms
SOFT-START
This function forces VOUT to increase at a controlled rate during start up. During soft-start, the error amplifier’s
reference voltage ramps from 0V to its nominal value of 0.6V in approximately 600 µs. This forces the regulator
output to ramp up in a controlled fashion, which helps reduce inrush current.
OUTPUT OVERVOLTAGE PROTECTION
The over-voltage comparator compares the FB pin voltage to a voltage that is 15% higher than the internal
reference VREF. Once the FB pin voltage goes 15% above the internal reference, the internal PMOS control
switch is turned off, which allows the output voltage to decrease toward regulation.
UNDERVOLTAGE LOCKOUT
Under-voltage lockout (UVLO) prevents the LM2832 from operating until the input voltage exceeds 2.73V (typ).
The UVLO threshold has approximately 430 mV of hysteresis, so the part will operate until VIN drops below 2.3V
(typ). Hysteresis prevents the part from turning off during power up if VIN is non-monotonic.
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CURRENT LIMIT
The LM2832 uses cycle-by-cycle current limiting to protect the output switch. During each switching cycle, a
current limit comparator detects if the output switch current exceeds 3.25A (typ), and turns off the switch until the
next switching cycle begins.
THERMAL SHUTDOWN
Thermal shutdown limits total power dissipation by turning off the output switch when the IC junction temperature
exceeds 165°C. After thermal shutdown occurs, the output switch doesn’t turn on until the junction temperature
drops to approximately 150°C.
Design Guide
INDUCTOR SELECTION
The Duty Cycle (D) can be approximated quickly using the ratio of output voltage (VO) to input voltage (VIN):
VOUT
D =
VIN
(1)
The catch diode (D1) forward voltage drop and the voltage drop across the internal PMOS must be included to
calculate a more accurate duty cycle. Calculate D by using the following formula:
VOUT + VD
D =
VIN + VD - VSW
(2)
VSW can be approximated by:
VSW = IOUT x RDSON
(3)
The diode forward drop (VD) can range from 0.3V to 0.7V depending on the quality of the diode. The lower the
VD, the higher the operating efficiency of the converter. The inductor value determines the output ripple current.
Lower inductor values decrease the size of the inductor, but increase the output ripple current. An increase in the
inductor value will decrease the output ripple current.
One must ensure that the minimum current limit (2.4A) is not exceeded, so the peak current in the inductor must
be calculated. The peak current (ILPK) in the inductor is calculated by:
ILPK = IOUT + ΔiL
(4)
Di
L
I
OUT
V
OUT
V
- V
OUT
IN
L
L
t
DT
T
S
S
Figure 25. Inductor Current
VIN - VOUT
L
2DiL
=
DTS
(5)
(6)
In general,
ΔiL = 0.1 x (IOUT) → 0.2 x (IOUT
)
If ΔiL = 20% of 2A, the peak current in the inductor will be 2.4A. The minimum ensured current limit over all
operating conditions is 2.4A. One can either reduce ΔiL, or make the engineering judgment that zero margin will
be safe enough. The typical current limit is 3.25A.
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The LM2832 operates at frequencies allowing the use of ceramic output capacitors without compromising
transient response. Ceramic capacitors allow higher inductor ripple without significantly increasing output ripple.
See the OUTPUT CAPACITOR for more details on calculating output voltage ripple. Now that the ripple current
is determined, the inductance is calculated by:
DTS
2DiL
x (VIN - VOUT
)
L =
where
1
TS =
fS
(8)
(8)
When selecting an inductor, make sure that it is capable of supporting the peak output current without saturating.
Inductor saturation will result in a sudden reduction in inductance and prevent the regulator from operating
correctly. Because of the speed of the internal current limit, the peak current of the inductor need only be
specified for the required maximum output current. For example, if the designed maximum output current is 1.0A
and the peak current is 1.25A, then the inductor should be specified with a saturation current limit of > 1.25A.
There is no need to specify the saturation or peak current of the inductor at the 3.25A typical switch current limit.
The difference in inductor size is a factor of 5. Because of the operating frequency of the LM2832, ferrite based
inductors are preferred to minimize core losses. This presents little restriction since the variety of ferrite-based
inductors is huge. Lastly, inductors with lower series resistance (RDCR) will provide better operating efficiency. For
recommended inductors see Example Circuits.
INPUT CAPACITOR
An input capacitor is necessary to ensure that VIN does not drop excessively during switching transients. The
primary specifications of the input capacitor are capacitance, voltage, RMS current rating, and ESL (Equivalent
Series Inductance). The recommended input capacitance is 22 µF.The input voltage rating is specifically stated
by the capacitor manufacturer. Make sure to check any recommended deratings and also verify if there is any
significant change in capacitance at the operating input voltage and the operating temperature. The input
capacitor maximum RMS input current rating (IRMS-IN) must be greater than:
Di2
3
D IOUT2 (1-D) +
IRMS_IN
(9)
Neglecting inductor ripple simplifies the above equation to:
IRMS_IN = IOUT
x
D(1 - D)
(10)
It can be shown from the above equation that maximum RMS capacitor current occurs when D = 0.5. Always
calculate the RMS at the point where the duty cycle D is closest to 0.5. The ESL of an input capacitor is usually
determined by the effective cross sectional area of the current path. A large leaded capacitor will have high ESL
and a 0805 ceramic chip capacitor will have very low ESL. At the operating frequencies of the LM2832, leaded
capacitors may have an ESL so large that the resulting impedance (2πfL) will be higher than that required to
provide stable operation. As a result, surface mount capacitors are strongly recommended.
Sanyo POSCAP, Tantalum or Niobium, Panasonic SP, and multilayer ceramic capacitors (MLCC) are all good
choices for both input and output capacitors and have very low ESL. For MLCCs it is recommended to use X7R
or X5R type capacitors due to their tolerance and temperature characteristics. Consult capacitor manufacturer
datasheets to see how rated capacitance varies over operating conditions.
OUTPUT CAPACITOR
The output capacitor is selected based upon the desired output ripple and transient response. The initial current
of a load transient is provided mainly by the output capacitor. The output ripple of the converter is:
1
RESR
+
DVOUT = DIL
8 x FSW x COUT
(11)
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When using MLCCs, the ESR is typically so low that the capacitive ripple may dominate. When this occurs, the
output ripple will be approximately sinusoidal and 90° phase shifted from the switching action. Given the
availability and quality of MLCCs and the expected output voltage of designs using the LM2832, there is really no
need to review any other capacitor technologies. Another benefit of ceramic capacitors is their ability to bypass
high frequency noise. A certain amount of switching edge noise will couple through parasitic capacitances in the
inductor to the output. A ceramic capacitor will bypass this noise while a tantalum will not. Since the output
capacitor is one of the two external components that control the stability of the regulator control loop, most
applications will require a minimum of 22 µF of output capacitance. Capacitance often, but not always, can be
increased significantly with little detriment to the regulator stability. Like the input capacitor, recommended
multilayer ceramic capacitors are X7R or X5R types.
CATCH DIODE
The catch diode (D1) conducts during the switch off-time. A Schottky diode is recommended for its fast switching
times and low forward voltage drop. The catch diode should be chosen so that its current rating is greater than:
ID1 = IOUT x (1-D)
(12)
The reverse breakdown rating of the diode must be at least the maximum input voltage plus appropriate margin.
To improve efficiency, choose a Schottky diode with a low forward voltage drop.
OUTPUT VOLTAGE
The output voltage is set using the following equation where R2 is connected between the FB pin and GND, and
R1 is connected between VO and the FB pin. A good value for R2 is 10kΩ. When designing a unity gain
converter (Vo = 0.6V), R1 should be between 0Ω and 100Ω, and R2 should be equal or greater than 10kΩ.
VOUT
x R2
- 1
R1 =
VREF
VREF = 0.60V
(13)
(14)
PCB LAYOUT CONSIDERATIONS
When planning layout there are a few things to consider when trying to achieve a clean, regulated output. The
most important consideration is the close coupling of the GND connections of the input capacitor and the catch
diode D1. These ground ends should be close to one another and be connected to the GND plane with at least
two through-holes. Place these components as close to the IC as possible. Next in importance is the location of
the GND connection of the output capacitor, which should be near the GND connections of CIN and D1. There
should be a continuous ground plane on the bottom layer of a two-layer board except under the switching node
island. The FB pin is a high impedance node and care should be taken to make the FB trace short to avoid noise
pickup and inaccurate regulation. The feedback resistors should be placed as close as possible to the IC, with
the GND of R1 placed as close as possible to the GND of the IC. The VOUT trace to R2 should be routed away
from the inductor and any other traces that are switching. High AC currents flow through the VIN, SW and VOUT
traces, so they should be as short and wide as possible. However, making the traces wide increases radiated
noise, so the designer must make this trade-off. Radiated noise can be decreased by choosing a shielded
inductor. The remaining components should also be placed as close as possible to the IC. Please see
Application Note AN-1229 SNVA054 for further considerations and the LM2832 demo board as an example of a
four-layer layout.
Calculating Efficiency, and Junction Temperature
The complete LM2832 DC/DC converter efficiency can be calculated in the following manner.
POUT
h =
PIN
(15)
Or
POUT
h =
POUT + PLOSS
(16)
Calculations for determining the most significant power losses are shown below. Other losses totaling less than
2% are not discussed.
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Power loss (PLOSS) is the sum of two basic types of losses in the converter: switching and conduction.
Conduction losses usually dominate at higher output loads, whereas switching losses remain relatively fixed and
dominate at lower output loads. The first step in determining the losses is to calculate the duty cycle (D):
VOUT + VD
D =
VIN + VD - VSW
(17)
VSW is the voltage drop across the internal PFET when it is on, and is equal to:
VSW = IOUT x RDSON
(18)
VD is the forward voltage drop across the Schottky catch diode. It can be obtained from the diode manufactures
Electrical Characteristics section. If the voltage drop across the inductor (VDCR) is accounted for, the equation
becomes:
VOUT + VD + VDCR
D =
VIN + VD + VDCR - VSW
(19)
The conduction losses in the free-wheeling Schottky diode are calculated as follows:
PDIODE = VD x IOUT x (1-D)
(20)
Often this is the single most significant power loss in the circuit. Care should be taken to choose a Schottky
diode that has a low forward voltage drop.
Another significant external power loss is the conduction loss in the output inductor. The equation can be
simplified to:
PIND = IOUT2 x RDCR
(21)
The LM2832 conduction loss is mainly associated with the internal PFET:
2
DiL
IOUT
1
3
PCOND = (IOUT2 x D)
x
RDSON
1 +
(22)
(23)
If the inductor ripple current is fairly small, the conduction losses can be simplified to:
PCOND = IOUT2 x RDSON x D
Switching losses are also associated with the internal PFET. They occur during the switch on and off transition
periods, where voltages and currents overlap resulting in power loss. The simplest means to determine this loss
is to empirically measuring the rise and fall times (10% to 90%) of the switch at the switch node.
Switching Power Loss is calculated as follows:
PSWR = 1/2(VIN x IOUT x FSW x TRISE
)
(24)
(25)
(26)
PSWF = 1/2(VIN x IOUT x FSW x TFALL
)
PSW = PSWR + PSWF
Another loss is the power required for operation of the internal circuitry:
PQ = IQ x VIN
(27)
IQ is the quiescent operating current, and is typically around 2.5mA for the 0.55MHz frequency option.
Typical Application power losses are:
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Table 1. Power Loss Tabulation
VIN
VOUT
IOUT
VD
5.0V
3.3V
1.75A
0.45V
550kHz
2.5mA
4nS
POUT
5.78W
PDIODE
262mW
FSW
IQ
PQ
PSWR
12.5mW
10mW
TRISE
TFALL
RDS(ON)
INDDCR
D
4nS
PSWF
10mW
150mΩ
50mΩ
0.667
88%
PCOND
PIND
PLOSS
PINTERNAL
306mW
153mW
753mW
339mW
η
ΣPCOND + PSW + PDIODE + PIND + PQ = PLOSS
ΣPCOND + PSWF + PSWR + PQ = PINTERNAL
PINTERNAL = 339mW
(28)
(29)
(30)
Thermal Definitions
TJ
Chip junction temperature
Ambient temperature
TA
RθJC Thermal resistance from chip junction to device case
RθJA Thermal resistance from chip junction to ambient air
Heat in the LM2832 due to internal power dissipation is removed through conduction and/or convection.
Conduction Heat transfer occurs through cross sectional areas of material. Depending on the material, the
transfer of heat can be considered to have poor to good thermal conductivity properties (insulator vs.
conductor).
Heat Transfer goes as:
Silicon → package → lead frame → PCB
Convection Heat transfer is by means of airflow. This could be from a fan or natural convection. Natural
convection occurs when air currents rise from the hot device to cooler air.
Thermal impedance is defined as:
DT
Rq =
Power
(31)
(32)
Thermal impedance from the silicon junction to the ambient air is defined as:
TJ - TA
Power
RqJA
=
The PCB size, weight of copper used to route traces and ground plane, and number of layers within the PCB can
greatly effect RθJA. The type and number of thermal vias can also make a large difference in the thermal
impedance. Thermal vias are necessary in most applications. They conduct heat from the surface of the PCB to
the ground plane. Four to six thermal vias should be placed under the exposed pad to the ground plane if the
WSON package is used.
Thermal impedance also depends on the thermal properties of the application operating conditions (Vin, Vo, Io
etc), and the surrounding circuitry.
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Silicon Junction Temperature Determination Method 1:
To accurately measure the silicon temperature for a given application, two methods can be used. The first
method requires the user to know the thermal impedance of the silicon junction to top case temperature.
Some clarification needs to be made before we go any further.
R
θJC is the thermal impedance from all six sides of an IC package to silicon junction.
ΦJC is the thermal impedance from top case to the silicon junction.
R
In this data sheet we will use RΦJC so that it allows the user to measure top case temperature with a small
thermocouple attached to the top case.
RΦJC is approximately 30°C/Watt for the 6-pin WSON package with the exposed pad. Knowing the internal
dissipation from the efficiency calculation given previously, and the case temperature, which can be empirically
measured on the bench we have:
TJ - TC
Power
RFJC
=
(33)
(34)
Therefore:
Tj = (RΦJC x PLOSS) + TC
From the previous example:
Tj = (RΦJC x PINTERNAL) + TC
Tj = 30°C/W x 0.339W + TC
(35)
(36)
The second method can give a very accurate silicon junction temperature.
The first step is to determine RθJA of the application. The LM2832 has over-temperature protection circuitry.
When the silicon temperature reaches 165°C, the device stops switching. The protection circuitry has a
hysteresis of about 15°C. Once the silicon temperature has decreased to approximately 150°C, the device will
start to switch again. Knowing this, the RθJA for any application can be characterized during the early stages of
the design one may calculate the RθJA by placing the PCB circuit into a thermal chamber. Raise the ambient
temperature in the given working application until the circuit enters thermal shutdown. If the SW-pin is monitored,
it will be obvious when the internal PFET stops switching, indicating a junction temperature of 165°C. Knowing
the internal power dissipation from the above methods, the junction temperature, and the ambient temperature
RθJA can be determined.
165°- Ta
PINTERNAL
RqJA
=
(37)
Once this is determined, the maximum ambient temperature allowed for a desired junction temperature can be
found.
An example of calculating RθJA for an application using the Texas Instruments LM2832 WSON demonstration
board is shown below.
The four layer PCB is constructed using FR4 with ½ oz copper traces. The copper ground plane is on the bottom
layer. The ground plane is accessed by two vias. The board measures 3.0cm x 3.0cm. It was placed in an oven
with no forced airflow. The ambient temperature was raised to 126°C, and at that temperature, the device went
into thermal shutdown.
From the previous example:
PINTERNAL = 339mW
(38)
165oC - 126oC
= 115o C/W
RqJA
=
339 mW
(39)
If the junction temperature was to be kept below 125°C, then the ambient temperature could not go above 86°C.
Tj - (RθJA x PLOSS) = TA
(40)
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125°C - (115°C/W x 339mW) = 86°C
(41)
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WSON Package
Figure 26. Internal WSON Connection
For certain high power applications, the PCB land may be modified to a "dog bone" shape (see Figure 27). By
increasing the size of ground plane, and adding thermal vias, the RθJA for the application can be reduced.
FB
1
2
6
EN
GND
5 VINA
4 VIND
SW
3
Figure 27. 6-Lead WSON PCB Dog Bone Layout
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LM2832X Design Example 1
FB
EN
GND
SW
LM2832
R3
L1
V
= 1.2V @ 2.0A
R1
O
V
IN
V
IN
= 5V
C1
D1
C2
R2
Figure 28. LM2832X (1.6MHz): Vin = 5V, Vo = 1.2V @ 2.0A
Table 2. Bill of Materials
Part ID
Part Value
2.0A Buck Regulator
22µF, 6.3V, X5R
2x22µF, 6.3V, X5R
0.4Vf Schottky 2A, 20VR
2.2µH, 3.5A
Manufacturer
TI
Part Number
LM2832X
U1
C1, Input Cap
TDK
C3216X5ROJ226M
C3216X5ROJ226M
B220/A
C2, Output Cap
TDK
D1, Catch Diode
Diodes Inc.
Coilcraft
Vishay
Vishay
Vishay
L1
R2
R1
R3
DS3316P-222
15.0kΩ, 1%
CRCW08051502F
CRCW08051502F
CRCW08051003F
15.0kΩ, 1%
100kΩ, 1%
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LM2832X Design Example 2
FB
EN
GND
SW
LM2832
R3
L1
V
O
= 0.6V @ 2.0A
R1
V
IN
V
= 5V
IN
C1
D1
C2
R2
Figure 29. LM2832X (1.6MHz): Vin = 5V, Vo = 0.6V @ 2.0A
Table 3. Bill of Materials
Part ID
Part Value
2.0A Buck Regulator
22µF, 6.3V, X5R
2x22µF, 6.3V, X5R
0.4Vf Schottky 2A, 20VR
3.3µH, 3.3A
Manufacturer
TI
Part Number
LM2832X
U1
C1, Input Cap
TDK
C3216X5ROJ226M
C3216X5ROJ226M
B220/A
C2, Output Cap
TDK
D1, Catch Diode
Diodes Inc.
Coilcraft
Vishay
L1
R2
R1
R3
DS3316P-332
CRCW08051000F
10.0kΩ, 1%
0Ω
100kΩ, 1%
Vishay
CRCW08051003F
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LM2832X Design Example 3
FB
EN
GND
SW
LM2832
R3
L1
V
= 3.3V @ 2.0A
R1
O
V
IN
V
IN
= 5V
C1
D1
C2
R2
Figure 30. LM2832X (1.6MHz): Vin = 5V, Vo = 3.3V @ 2.0A
Table 4. Bill of Materials
Part ID
Part Value
2.0A Buck Regulator
22µF, 6.3V, X5R
2x22µF, 6.3V, X5R
0.4Vf Schottky 2A, 20VR
2.2µH, 2.8A
Manufacturer
TI
Part Number
LM2832X
U1
C1, Input Cap
TDK
C3216X5ROJ226M
C3216X5ROJ226M
B220/A
C2, Output Cap
TDK
D1, Catch Diode
Diodes Inc.
Coilcraft
Vishay
Vishay
Vishay
L1
R2
R1
R3
ME3220-222
10.0kΩ, 1%
CRCW08051002F
CRCW08054532F
CRCW08051003F
45.3kΩ, 1%
100kΩ, 1%
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LM2832Y Design Example 4
FB
EN
GND
SW
LM2832
R3
L1
V
= 3.3V @ 2.0A
R1
O
V
IN
V
IN
= 5V
C1
D1
C2
R2
Figure 31. LM2832Y (550kHz): Vin = 5V, Vout = 3.3V @ 2.0A
Table 5. Bill of Materials
Part ID
Part Value
1.5A Buck Regulator
22µF, 6.3V, X5R
2x22µF, 6.3V, X5R
0.3Vf Schottky 1.5A, 30VR
4.7µH 2.1A
Manufacturer
TI
Part Number
LM2832Y
U1
C1, Input Cap
C2, Output Cap
D1, Catch Diode
L1
TDK
C3216X5ROJ226M
C3216X5ROJ226M
CRS08
TDK
TOSHIBA
TDK
SLF7045T-4R7M2R0-PF
CRCW08051002F
CRCW08051002F
R1
10.0kΩ, 1%
Vishay
Vishay
R2
10.0kΩ, 1%
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LM2832Y Design Example 5
FB
EN
GND
SW
LM2832
R3
L1
V
= 1.2V @ 2.0A
R1
O
V
IN
V
IN
= 5V
C1
D1
C2
R2
Figure 32. LM2832Y (550kHz): Vin = 5V, Vout = 1.2V @ 2.0A
Table 6. Bill of Materials
Part ID
Part Value
1.5A Buck Regulator
22µF, 6.3V, X5R
2x22µF, 6.3V, X5R
0.3Vf Schottky 1.5A, 30VR
6.8µH 1.8A
Manufacturer
TI
Part Number
LM2832Y
U1
C1, Input Cap
C2, Output Cap
D1, Catch Diode
L1
TDK
C3216X5ROJ226M
C3216X5ROJ226M
CRS08
TDK
TOSHIBA
TDK
SLF7045T-6R8M1R7
CRCW08051002F
CRCW08051002F
R1
10.0kΩ, 1%
Vishay
Vishay
R2
10.0kΩ, 1%
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LM2832Z Design Example 6
FB
EN
GND
SW
LM2832
R3
L1
V
= 3.3V @ 2.0A
R1
O
V
IN
V
IN
= 5V
C1
D1
C2
R2
Figure 33. LM2832Z (3MHz): Vin = 5V, Vo = 3.3V @ 2.0A
Table 7. Bill of Materials
Part ID
Part Value
2.0A Buck Regulator
22µF, 6.3V, X5R
2x22µF, 6.3V, X5R
0.4Vf Schottky 2A, 20VR
3.3µH, 3.3A
Manufacturer
TI
Part Number
LM2832Z
U1
C1, Input Cap
TDK
C3216X5ROJ226M
C3216X5ROJ226M
B220/A
C2, Output Cap
TDK
D1, Catch Diode
Diodes Inc.
Coilcraft
Vishay
Vishay
Vishay
L1
R2
R1
R3
DS3316P-332
10.0kΩ, 1%
CRCW08051002F
CRCW08054532F
CRCW08051003F
45.3kΩ, 1%
100kΩ, 1%
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LM2832Z Design Example 7
FB
EN
GND
SW
LM2832
R3
L1
V
= 1.2V @ 2.0A
R1
O
V
IN
V
IN
= 5V
C1
D1
C2
R2
Figure 34. LM2832Z (3MHz): Vin = 5V, Vo = 1.2V @ 2.0A
Table 8. Bill of Materials
Part ID
Part Value
2.0A Buck Regulator
22µF, 6.3V, X5R
2x22µF, 6.3V, X5R
0.4Vf Schottky 2A, 20VR
4.7µH, 2.7A
Manufacturer
TI
Part Number
LM2832Z
U1
C1, Input Cap
TDK
C3216X5ROJ226M
C3216X5ROJ226M
B220/A
C2, Output Cap
TDK
D1, Catch Diode
Diodes Inc.
Coilcraft
Vishay
Vishay
Vishay
L1
R2
R1
R3
DS3316P-472
10.0kΩ, 1%
CRCW08051002F
CRCW08051002F
CRCW08051003F
10.0kΩ, 1%
100kΩ, 1%
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LM2832X Dual Converters with Delayed Enabled Design Example 8
V
IN
U1
VIND VINA
C1
R3
L1
V
= 3.3V @ 2.0A
R1
O
SW
EN
D1
C2
R2
LM2832
GND
FB
U3
4
3
2
R6
LP3470M5X-3.08
LP3470
RESET
5
1
V
IN
C7
U2
VIND VINA
C3
L2
V
= 1.2V @ 2.0A
R4
O
SW
LM2832
D2
C4
R5
EN
GND
FB
Figure 35. LM2832X (1.6MHz): Vin = 5V, Vo = 1.2V @ 2.0A & 3.3V @2.0A
Table 9. Bill of Materials
Part ID
U1, U2
Part Value
2.0A Buck Regulator
Power on Reset
22µF, 6.3V, X5R
2x22µF, 6.3V, X5R
Trr delay capacitor
0.4Vf Schottky 2A, 20VR
3.3µH, 2.7A
Manufacturer
TI
Part Number
LM2832X
U3
TI
LP3470M5X-3.08
C3216X5ROJ226M
C3216X5ROJ226M
C1, C3 Input Cap
C2, C4 Output Cap
C7
TDK
TDK
TDK
D1, D2 Catch Diode
L1, L2
Diodes Inc.
Coilcraft
Vishay
Vishay
Vishay
B220/A
ME3220-102
R2, R4, R5
R1, R6
10.0kΩ, 1%
CRCW08051002F
CRCW08054532F
CRCW08051003F
45.3kΩ, 1%
R3
100kΩ, 1%
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LM2832X Buck Converter & Voltage Double Circuit with LDO Follower Design Example 9
V
O
= 5.0V @ 150mA
L2
U2
LDO
D2
C5
C4
C6
U1
C3
L1
LM2832
VIND
VINA
EN
SW
GND
FB
V
= 5V
IN
R1
R2
V
O
= 3.3V @ 2.0A
C1
C2
D1
Figure 36. LM2832X (1.6MHz): Vin = 5V, Vo = 3.3V @ 2.0A & LP2986-5.0 @ 150mA
Table 10. Bill of Materials
Part ID
Part Value
2.0A Buck Regulator
200mA LDO
Manufacturer
TI
Part Number
LM2832X
U1
U2
TI
LP2986-5.0
C1, Input Cap
22µF, 6.3V, X5R
2x22µF, 6.3V, X5R
2.2µF, 6.3V, X5R
0.4Vf Schottky 2A, 20VR
0.4Vf Schottky 20VR, 500mA
10µH, 800mA
TDK
C3216X5ROJ226M
C3216X5ROJ226M
C1608X5R0J225M
B220/A
C2, Output Cap
TDK
C3 – C6
TDK
D1, Catch Diode
Diodes Inc.
ON Semi
CoilCraft
CoilCraft
Vishay
Vishay
D2
L2
L1
R2
R1
MBR0520
ME3220-103
2.2µH, 3.5A
DS3316P-222
CRCW08054532F
CRCW08051002F
45.3kΩ, 1%
10.0kΩ, 1%
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REVISION HISTORY
Changes from Original (April 2013) to Revision A
Page
•
Changed layout of National Data Sheet to TI format .......................................................................................................... 26
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PACKAGE OPTION ADDENDUM
www.ti.com
30-Sep-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
LM2832XMY
NRND
HVSSOP
DGN
8
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 125
SLBB
SLBB
LM2832XMY/NOPB
LM2832XSD/NOPB
LM2832YMY/NOPB
LM2832YSD/NOPB
LM2832ZMY/NOPB
LM2832ZSD/NOPB
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
HVSSOP
WSON
DGN
NGG
DGN
NGG
DGN
NGG
8
6
8
6
8
6
1000 RoHS & Green
1000 RoHS & Green
1000 RoHS & Green
1000 RoHS & Green
1000 RoHS & Green
1000 RoHS & Green
SN
SN
SN
SN
SN
SN
Level-1-260C-UNLIM
Level-3-260C-168 HR
Level-1-260C-UNLIM
Level-3-260C-168 HR
Level-1-260C-UNLIM
Level-3-260C-168 HR
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
L196B
SLCB
L197B
SLDB
L198B
HVSSOP
WSON
HVSSOP
WSON
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
30-Sep-2021
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
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provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
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Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Aug-2022
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM2832XMY
HVSSOP DGN
HVSSOP DGN
8
8
6
8
6
8
6
1000
1000
1000
1000
1000
1000
1000
178.0
178.0
178.0
178.0
178.0
178.0
178.0
12.4
12.4
12.4
12.4
12.4
12.4
12.4
5.3
5.3
3.3
5.3
3.3
5.3
3.3
3.4
3.4
3.3
3.4
3.3
3.4
3.3
1.4
1.4
1.0
1.4
1.0
1.4
1.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
Q1
Q1
Q1
Q1
Q1
Q1
Q1
LM2832XMY/NOPB
LM2832XSD/NOPB
LM2832YMY/NOPB
LM2832YSD/NOPB
LM2832ZMY/NOPB
LM2832ZSD/NOPB
WSON
HVSSOP DGN
WSON NGG
HVSSOP DGN
WSON NGG
NGG
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Aug-2022
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LM2832XMY
HVSSOP
HVSSOP
WSON
DGN
DGN
NGG
DGN
NGG
DGN
NGG
8
8
6
8
6
8
6
1000
1000
1000
1000
1000
1000
1000
210.0
210.0
208.0
210.0
208.0
210.0
208.0
185.0
185.0
191.0
185.0
191.0
185.0
191.0
35.0
35.0
35.0
35.0
35.0
35.0
35.0
LM2832XMY/NOPB
LM2832XSD/NOPB
LM2832YMY/NOPB
LM2832YSD/NOPB
LM2832ZMY/NOPB
LM2832ZSD/NOPB
HVSSOP
WSON
HVSSOP
WSON
Pack Materials-Page 2
PACKAGE OUTLINE
DGN0008A
PowerPADTM VSSOP - 1.1 mm max height
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE PACKAGE
C
5.05
4.75
TYP
A
0.1 C
SEATING
PLANE
PIN 1 INDEX AREA
6X 0.65
8
1
2X
3.1
2.9
1.95
NOTE 3
4
5
0.38
8X
0.25
3.1
2.9
0.13
C A B
B
NOTE 4
0.23
0.13
SEE DETAIL A
EXPOSED THERMAL PAD
4
5
0.25
GAGE PLANE
2.0
1.7
9
1.1 MAX
8
0.15
0.05
1
0.7
0.4
0 -8
A
20
DETAIL A
TYPICAL
1.88
1.58
4218836/A 11/2019
PowerPAD is a trademark of Texas Instruments.
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-187.
www.ti.com
EXAMPLE BOARD LAYOUT
DGN0008A
PowerPADTM VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE
(2)
NOTE 9
METAL COVERED
BY SOLDER MASK
(1.88)
SOLDER MASK
DEFINED PAD
SYMM
8X (1.4)
(R0.05) TYP
8
8X (0.45)
1
(3)
NOTE 9
SYMM
9
(2)
(1.22)
6X (0.65)
5
4
(
0.2) TYP
VIA
SEE DETAILS
(0.55)
(4.4)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 15X
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
OPENING
METAL
EXPOSED METAL
EXPOSED METAL
0.05 MAX
ALL AROUND
0.05 MIN
ALL AROUND
NON-SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
15.000
(PREFERRED)
SOLDER MASK DETAILS
4218836/A 11/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
8. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
9. Size of metal pad may vary due to creepage requirement.
www.ti.com
EXAMPLE STENCIL DESIGN
DGN0008A
PowerPADTM VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE
(1.88)
BASED ON
0.125 THICK
STENCIL
SYMM
(R0.05) TYP
8X (1.4)
8
1
8X (0.45)
(2)
BASED ON
SYMM
0.125 THICK
STENCIL
6X (0.65)
5
4
METAL COVERED
BY SOLDER MASK
SEE TABLE FOR
DIFFERENT OPENINGS
FOR OTHER STENCIL
THICKNESSES
(4.4)
SOLDER PASTE EXAMPLE
EXPOSED PAD 9:
100% PRINTED SOLDER COVERAGE BY AREA
SCALE: 15X
STENCIL
THICKNESS
SOLDER STENCIL
OPENING
0.1
2.10 X 2.24
1.88 X 2.00 (SHOWN)
1.72 X 1.83
0.125
0.15
0.175
1.59 X 1.69
4218836/A 11/2019
NOTES: (continued)
10. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
11. Board assembly site may have different recommendations for stencil design.
www.ti.com
MECHANICAL DATA
NGG0006A
SDE06A (Rev A)
www.ti.com
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