LM2940K-8.0/883 [TI]

8V FIXED POSITIVE LDO REGULATOR, 0.3V DROPOUT, MBCY2, METAL CAN, TO-3, 2 PIN;
LM2940K-8.0/883
型号: LM2940K-8.0/883
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

8V FIXED POSITIVE LDO REGULATOR, 0.3V DROPOUT, MBCY2, METAL CAN, TO-3, 2 PIN

输出元件 调节器
文件: 总12页 (文件大小:168K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MICROCIRCUIT DATA SHEET  
Original Creation Date: 07/22/96  
Last Update Date: 10/08/99  
MNLM2940-8.0-X REV 1A1  
Last Major Revision Date: 07/22/96  
1A LOW DROPOUT REGULATOR  
General Description  
The LM2940 positive voltage regulator features the ability to source 1A of ouput current  
with a dropout voltage of typically 0.5V and a maximum of 1V over the entire temperature  
range. Furthermore, a quiescent current reduction circuit has been included which reduces  
the ground current when the differential between the input voltage and the output voltage  
exceeds approximately 3V. The quiescent current with 1A of output current and an  
input-output differential of 5V is therefore only 30 mA. Higher quiescent currents only  
exist when the regulator is in the dropout mode (Vin - Vout < 3V).  
Designed also for vehicular applications, the LM2940 and all regulated circuitry are  
protected from reverse battery installations or 2-battery jumps. During line transients,  
such as load dump when the input voltage can momentarily exceed the specified maximum  
operating voltage, the regulator will automatically shut down to protect both the internal  
circuits and the load. The LM2940 cannot be harmed by temporary mirror-image insertion.  
Familiar regulator features such as short circuit and thermal overload protection are also  
provided.  
Industry Part Number  
NS Part Numbers  
LM2940  
LM2940J-8.0/883  
LM2940K-8.0/883  
Prime Die  
LM2940  
Controlling Document  
SEE FEATURE SECTION  
Processing  
Subgrp Description  
Temp (oC)  
MIL-STD-883, Method 5004  
1
Static tests at  
+25  
2
Static tests at  
+125  
-55  
3
Static tests at  
4
Dynamic tests at  
Dynamic tests at  
Dynamic tests at  
Functional tests at  
Functional tests at  
Functional tests at  
Switching tests at  
Switching tests at  
Switching tests at  
+25  
Quality Conformance Inspection  
5
+125  
-55  
6
MIL-STD-883, Method 5005  
7
+25  
8A  
8B  
9
+125  
-55  
+25  
10  
11  
+125  
-55  
1
MICROCIRCUIT DATA SHEET  
MNLM2940-8.0-X REV 1A1  
Features  
- Dropout voltage typically 0.5V @ Io = 1A  
- Output current in excess of 1A  
- Output voltage trimmed before assembly  
- Reverse battery protection  
- Internal short circuit current limit  
- Mirror image insertion protection  
- CONTROLLING DOCUMENT  
- LM2940J-8.0/883  
- LM2940K-8.0/883  
5962-9088301QEA  
5962-9088301MYA  
2
MICROCIRCUIT DATA SHEET  
MNLM2940-8.0-X REV 1A1  
(Absolute Maximum Ratings)  
(Note 1)  
Input Voltage (Survival Voltage <100ms)  
60V  
Internal Power Dissipation  
(Note 2, 3)  
Internally Limited  
150 C  
Maximum Junction Temperature  
Storage Temperature Range  
-65 C to +150 C  
300 C  
Lead Temperature  
(Soldering, 10 seconds)  
Thermal Resistance  
ThetaJA  
T03 Pkg  
T03 Pkg  
CERDIP  
CERDIP  
(Still Air)  
40 C/W  
TBD  
73 C/W  
37 C/W  
(500LF/Min Air Flow)  
(Still Air)  
(500LF/Min Air Flow)  
ThetaJC  
T03 Pkg  
CERDIP  
5 C/W  
3 C/W  
(Note 3)  
Package Weight  
(Typcial)  
T03 Pkg  
TBD  
1970mg  
360mg  
CERDIP  
CERAMIC SOIC  
ESD Susceptibility  
(Note 4)  
4000V  
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur.  
Operating Ratings are conditions for which the device is functional, but do not  
guaranteed specific performance limits. For guaranteed specifications and test  
conditions see the Electrical Characteristics. The guaranteed specifications apply  
only for the test conditions listed. Some performance characteristics may degrade  
when the device is not operated under the listed test conditions.  
Note 2: The maximum power dissipation must be derated at elevated temperatures and is  
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to  
ambient thermal resistance), and TA (ambient temperature). The maximum allowable  
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number  
given in the Absolute Maximum Ratings, whichever is lower.  
Note 3: The package material for these devices allows much improved heat transfer over our  
standard ceramic packages. In order to take full advantage of this improved heat  
transfer, heat sinking must be provided between the package base (directly beneath  
the die), and either metal traces on, or thermal vias through, the printed circuit  
board. Without this additional heat sinking, device power dissipation must be  
calculated using junction-to-ambient, rather than junction-to-case, thermal  
resistance. It must not be assumed that the device leads will provide substantial  
heat transfer out of the package, since the thermal resistance of the leadframe  
material is very poor, relative to the material of the package base. The stated  
junction-to-case thermal resistance is for the package material only, and does not  
account for the additional thermal resistance between the package base and the  
printed circuit board. The user must determine the value of the additional thermal  
resistance and must combine this with the stated value for the package, to calculate  
the total allowed power dissipation for the device.  
Note 4: Human body model, 100pF discharged through 1.5K Ohms  
3
MICROCIRCUIT DATA SHEET  
MNLM2940-8.0-X REV 1A1  
Recommended Operating Conditions  
(Note 1)  
Input Voltage  
26V  
-55 C < TA < +125 C  
Operating Temperature Range  
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur.  
Operating Ratings are conditions for which the device is functional, but do not  
guaranteed specific performance limits. For guaranteed specifications and test  
conditions see the Electrical Characteristics. The guaranteed specifications apply  
only for the test conditions listed. Some performance characteristics may degrade  
when the device is not operated under the listed test conditions.  
4
MICROCIRCUIT DATA SHEET  
MNLM2940-8.0-X REV 1A1  
Electrical Characteristics  
DC PARAMETERS:  
(The following conditions apply to all the following parameters, unless otherwise specified.)  
DC: Vin = 13V, Io = 1A, Cout = 22uF  
PIN-  
NAME  
SUB-  
SYMBOL  
Vout  
PARAMETER  
CONDITIONS  
Vin = 13V, Io = 5mA  
NOTES  
MIN  
MAX UNIT  
8.24  
GROUPS  
Output Voltage  
7.76  
7.60  
7.76  
7.60  
7.76  
7.60  
7.76  
7.60  
7.76  
7.60  
7.76  
7.60  
7.76  
7.60  
7.76  
7.60  
-15  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
1
8.40  
8.24  
8.40  
8.24  
8.40  
8.24  
8.40  
8.24  
8.40  
8.24  
8.40  
8.24  
8.40  
8.24  
8.40  
2, 3  
1
Vin = 9.4V, Io = 5mA  
Vin = 10V, Io = 5mA  
Vin = 26V, Io = 5mA  
Vin = 13V, Io = 1A  
Vin = 9.4V, Io = 1A  
Vin = 9.4V, Io = 50mA  
Vin = 13V, Io = 50mA  
2, 3  
1
2, 3  
1
2, 3  
1
2, 3  
1
2, 3  
1
2, 3  
1
2, 3  
Reverse Polarity Ro = 100 Ohms  
Input Voltage DC  
1
1, 2,  
3
Iq  
Quiescent Current Vin = 13V, Io = 5mA  
0
15  
20  
15  
20  
15  
20  
50  
60  
50  
80  
80  
130  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mV  
mV  
mV  
mV  
1
0
2, 3  
1
Vin = 10V, Io = 5mA  
0
0
2, 3  
1
Vin = 26V, Io = 5mA  
0
0
2, 3  
1
Vin = 13V, Io = 1A  
0
0
2, 3  
1
Vrline  
Vrload  
Line Regulation  
Load Regulation  
10V < Vin < 26V, Io = 5mA  
Vin = 13V, 50mA < Io < 1A  
-50  
-80  
-80  
-130  
2, 3  
1
2, 3  
5
MICROCIRCUIT DATA SHEET  
MNLM2940-8.0-X REV 1A1  
Electrical Characteristics  
DC PARAMETERS:(Continued)  
(The following conditions apply to all the following parameters, unless otherwise specified.)  
DC: Vin = 13V, Io = 1A, Cout = 22uF  
PIN-  
NAME  
SUB-  
SYMBOL  
Vdo  
PARAMETER  
CONDITIONS  
NOTES  
MIN  
MAX UNIT  
GROUPS  
Dropout Voltage  
Io = 1A  
0
0
0
0
0.7  
V
1
1
V
2, 3  
1
Io = 100mA  
Vin = 13V  
200  
300  
mV  
mV  
A
2, 3  
1
Isc  
Short Circuit  
Current  
1.6  
1.3  
A
2, 3  
AC PARAMETERS:  
(The following conditions apply to all the following parameters, unless otherwise specified.)  
AC: Vin = 10V, Io = 1A, Cout = 22uF  
Max Line  
Vo < 9V, Ro = 100 Ohms, T = 20ms  
1
40  
V
V
7, 8A,  
8B  
Transient  
Reverse Polarity T = 20ms, Ro = 100 Ohms  
Input Voltage  
Transient  
1
-45  
7, 8A,  
8B  
No  
Zo  
RR  
Output Noise  
Voltage  
Vin = 13V, Io = 5mA, 10Hz = 100KHz  
1
1
0
1000  
1
uVrms 4, 5,  
6
Output Impedance Vin = 13V, Io = 100mA DC and 20mA AC,  
fo = 120Hz  
Ohm 4, 5,  
6
Ripple Rejection Vin = 13V, 1Vrms, f = 1KHz, Io = 5mA  
1
1
54  
48  
dB  
dB  
4
5, 6  
Note 1: Functional test only.  
6
MICROCIRCUIT DATA SHEET  
MNLM2940-8.0-X REV 1A1  
Graphics and Diagrams  
GRAPHICS#  
DESCRIPTION  
05826HRA2  
06332HRA2  
J16ARL  
METAL CAN (KA), TO-3, 2LD, LOW PROFILE (B/I CKT)  
CERDIP (J), 16 LEAD (B/I CKT)  
CERDIP (J), 16 LEAD (P/P DWG)  
K02CRE  
METAL CAN (KA), TO-3, 2LD, LOW PROFILE (P/P DWG)  
METAL CAN (KA), TO-3, 2LD, LOW PROFILE (PINOUT)  
CERDIP (J), 16 LEAD (PINOUT)  
P000137A  
P000159A  
See attached graphics following this page.  
7
OUTPUT  
GROUND  
(CASE)  
BOTTOM  
VIEW  
INPUT  
LM2940K-XX/883  
2 - LEAD TO3  
CONNECTION DIAGRAM  
BOTTOM VIEW  
P000137A  
MIL/AEROSPACE OPERATIONS  
2900 SEMICONDUCTOR DRIVE  
SANTA CLARA, CA 95050  
NC  
1
16  
VIN  
NC  
VOUT  
NC  
2
3
4
5
6
7
8
15  
14  
13  
12  
11  
10  
9
NC  
GND  
GND  
GND  
GND  
GND  
NC  
NC  
NC  
NC  
NC  
LM2940J-XX  
16 - LEAD DIP  
CONNECTION DIAGRAM  
TOP VIEW  
P000159A  
MIL/AEROSPACE OPERATIONS  
2900 SEMICONDUCTOR DRIVE  
SANTA CLARA, CA 95050  
MICROCIRCUIT DATA SHEET  
MNLM2940-8.0-X REV 1A1  
Revision History  
Rev ECN # Rel Date Originator Changes  
0A0  
M0001537 10/08/99  
Barbara Lopez  
Initial Release of: MNLM2940-8.0-X Rev. 0A0. Added  
note for power dissipation and reference to thermal  
resistance for Aluminum Nitride package.  
1A1  
M0003229 10/08/99  
Rose Malone  
Update MDS: MNLM2940-8.0-X, Rev. 0A0 to  
MNLM2940-8.0-X, Rev. 1A1. Moved reference to  
Controlling Document to Feature Section. Added to  
Absolute Section Thermal Resistance limit for T03  
package. Changed Vdo, Io = 100mA, Max. condition for  
subgroup 1 from 150mV to 200mV and subgroup 2 from  
200mV to 300mV.  
8

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