LM3209TLX-G3/NOPB [TI]
用于射频功率放大器的无缝转换降压/升压直流/直流稳压器 | YZR | 12 | -30 to 85;
| 型号： | LM3209TLX-G3/NOPB |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 用于射频功率放大器的无缝转换降压/升压直流/直流稳压器 | YZR | 12 | -30 to 85 放大器 射频 功率放大器 稳压器 |
| 文件： | 总6页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM3209-G3
LM3209-G3 PRODUCT BRIEF Seamless-Transition Buck-Boost Converter for
Battery- Powered 3G/4G RF Power Amplifiers
Literature Number: SNVS626
October 19, 2011
LM3209-G3 PRODUCT BRIEF
Seamless-Transition Buck-Boost Converter for Battery-
Powered 3G/4G RF Power Amplifiers
General Description
Features
The LM3209-G3 is buck-boost DC/DC converter designed to
generate output voltages above or below a given input volt-
age. It is particularly suitable for single cell Li-ion batteries for
portable applications.
Operates from a single Li-Ion cell: 2.7V to 5.5V
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Adjustable Output Voltage: 0.6V to 4.2V
1A Maximum Load Capability for VIN ≥3.2V, VOUT = 3.6V
2.4 MHz (typ.) Switching Frequency
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The LM3209-G3 operates at a 2.4 MHz typical switching fre-
quency in full synchronous operation providing seamless
transitions between buck and boost operating modes.
Seamless Buck-Boost Mode Transition
Fast Output Voltage Transition: 0.8V to 4.0V in 20 µs
High-Efficiency: 95% typ. at 3.7VIN, 3.5VOUT, at 300 mA
Cycle-by-cycle Over-Current Limit
The power converter topology needs only one external in-
ductor and two capacitors. Five internal power switches en-
able high overall efficiency.
Output Over-Voltage Clamp
The LM3209-G3 is internally compensated for buck and boost
modes of operation thus providing an optimal transient re-
sponse.
Internal Compensation
12-bump micro SMD Package
The LM3209-G3 is available in an 12-bump lead-free micro
SMD package of size 2.0 mm x 2.5 mm x 0.6 mm.
Applications
Battery-Powered 3G/4G RF Power Amplifiers
Notice: This document is not a full datasheet. For more
information regarding this product or to order samples,
please contact your local National Semiconductor/Texas
Instruments sales office or visit http://www.focus.ti.com/
general/docs/dsnsuprt.tsp.
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Cellular Phones
Portable Hard Disk Drives
PDAs
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Typical Application Circuit
30104001
© 2011 National Semiconductor Corporation
301040
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Physical Dimensions inches (millimeters) unless otherwise noted
12–Bump Thin Micro SMD, Large Bump
X1 = 2.0 mm ± 0.030 mm
X2 = 2.5 mm ± 0.030 mm
X3 = 0.6 mm ± 0.075 mm
NS Package Number TLA12VVA
www.national.com
2
Notes
3
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