LM3263TMX/NOPB [TI]
LM3263 High-Current Step-Down DC-DC Converter with MIPI® RF Front-End Control Interface for RF Power Amplifiers; LM3263高电流降压型DC - DC转换器， MIPI® RF前端控制接口的射频功率放大器
| 型号： | LM3263TMX/NOPB |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | LM3263 High-Current Step-Down DC-DC Converter with MIPI® RF Front-End Control Interface for RF Power Amplifiers |
| 文件： | 总39页 (文件大小：2173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM3263
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SNVS837 –JUNE 2013
LM3263 High-Current Step-Down DC-DC Converter with MIPI® RF Front-End
Control Interface for RF Power Amplifiers
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1
FEATURES
DESCRIPTION
The LM3263 is a DC-DC converter optimized for
•
MIPI® RFFE Digital Control Interface
23
powering multi-mode multi-band RF power amplifiers
(PAs) from a single Lithium-Ion cell. The LM3263
steps down an input voltage from 2.7V to 5.5V to a
dynamically adjustable output voltage of 0.4V to 3.6V.
The output voltage is externally programmed through
the RFFE Digital Control Interface and is set to
ensure efficient operation at all power levels of the
RF PA.
•
High-Efficiency PFM and PWM Modes with
Internal Seamless Transition
•
•
Operates from a Single Li-Ion Cell: 2.7V to 5.5V
Dynamically Adjustable Output Voltage: 0.4V
to 3.6V (typ.) in PFM and PWM Modes
•
•
•
•
•
•
•
2.5A Maximum Load Current in PWM Mode
2.7 MHz (typ.) Switching Frequency
ACB (reduces inductor requirements and size)
Internal Compensation
The LM3263 operates in modulated frequency PWM
mode producing a small and predictable amount of
output voltage ripple. PWM mode enables best
meeting power requirements and stringent spectral
compliance, with the minimal amount of filtering and
excess headroom. When operating in PFM mode, the
LM3263 enables the lowest current consumption
across PA output power level settings and therefore
maximizes system efficiency.
Current and Thermal Overload Protection
16-bump DSBGA Package
Very small Solution Size: approx. 9.8 mm2
APPLICATIONS
The LM3263 has a unique Active Current assist and
analog Bypass (ACB) feature to minimize inductor
size without any loss of output regulation for the
entire battery voltage and RF output power range,
until dropout. ACB provides a parallel current path,
when needed, to limit the maximum inductor current
to 1.45A (typ) while still driving a 2.5A load. The
analog bypass feature also enables operation with
minimal dropout voltage.
•
•
•
•
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Smartphones
RF PC Cards
Tablets, eBook Readers
Handheld Radios
Battery-Powered RF Devices
The LM3263 is available in a small 2 mm x 2 mm
chip-scale 16-bump DSBGA package.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
3
MIPI is a registered trademark of Mobile Industry Processor Interface Alliance.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated
LM3263
SNVS837 –JUNE 2013
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TYPICAL APPLICATION CIRCUIT
VBATT
2.7V to 5.5V
10 µF
0.1 µF
PVIN
PACB
LM3263
SGND
SVDD
FB
VIO
ACB
1.8V
Output Voltage
0.4V to 3.6V
RFFE
Master
1.5 µH
SCLK
SW
SDATA
GPO1
3.3 nF
10 µF
2G
VCC_PA
4.7 µF
PA
BGND
PGND
3 x 1.0 µF
3G/4G
VCC_PA
PA(s)
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
CONNECTION DIAGRAMS
A
B
C
D
PGND
A
B
C
D
PVIN
PVIN
VIO
SW
SW
ACB
PACB
ACB
PGND
BGND
FB
PVIN
PVIN
SW
SW
ACB
BGND
FB
PACB
SDATA
SDATA
VIO
ACB
SGND
SVDD
GPO1
SVDD
SGND
SCLK
GPO1
SCLK
1
2
3
4
4
3
2
1
Top View
Bottom View
2
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SNVS837 –JUNE 2013
PIN DESCRIPTIONS
Pin #
A1
Name
Description
PVIN
Power Supply Voltage Input to the internal PFET switch.
B1
VIO functions as the RFFE interface reference voltage. VIO also functions as reset and enable
C1
VIO
input to the LM3263. Typically connected to voltage regulator controlled by RF or Baseband
IC.
Digital control interface RFFE Bus clock input. Typically connected to RFFE master on RF or
Baseband IC. SCLK must be held low when VIO is not applied.
D1
SCLK
SW
A2
B2
Switching Node connection to the internal PFET switch and NFET synchronous rectifier.
Digital control interface RFFE Bus data input/output. Typically connected to RFFE master on
RF or Baseband IC. SDATA must be held low when VIO is not applied.
C2
SDATA
D2
A3
B3
C3
D3
A4
C4
B4
D4
GPO1
PGND
BGND
FB
General Purpose Output. Also used to reconfigure USID.
Power Ground to the internal NFET switch.
ACB, Analog Bypass Ground and Digital Ground.
Feedback Analog Input. Connect to the output at the output filter capacitor.
Signal Analog Ground (Low Current).
SGND
ACB
ACB and Analog Bypass output. Connect to the output at the output filter capacitor.
PACB
SVDD
ACB Power Supply Input.
Analog Power Supply Voltage.
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(1) (2)
ABSOLUTE MAXIMUM RATINGS
VBATT Pins to GND (PVIN, SVDD, PACB to PGND, SGND, BGND)
−0.2V to +6.0V
(GND-0.2V) to (VIN+0.2V) w/ 6.0V max
Internally Limited
FB, SW, GPO1, ACB, VIO, SDATA, SCLK
Continuous power dissipation
(3)
Maximum operating junction temperature (TJ-MAX
Storage temperature range
)
+150°C
−65°C to +150°C
Maximum lead temperature
(Soldering 10 sec.)
+260°C
ESD rating(4) (5)
Human Body Model
Charged-Device Model
1kV
250V
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to the potential at the GND pins.
(3) Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 150°C (typ.) and
disengages at TJ = 125°C (typ.).
(4) The Human Body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. (MIL-STD-883 3015.7)
(5) Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper ESD
handling procedure can result in damage.
(1)
OPERATING RATINGS
Input voltage range PVIN, SVDD, PACB
2.7V to 5.5V
1.65V to 1.95V
0 to 2.5A
Input voltage range VIO
Recommended current load
Junction temperature (TJ) range
−30°C to +125°C
−30°C to +90°C
(2)
Ambient temperature (TA) range
(1) All voltages are with respect to the potential at the GND pins.
(2) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be de-rated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP
125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the
=
part/package in the application (θJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (θJA × PD-MAX). At higher power levels duty
cycle usage is assumed to drop (i.e., max power 12.5% usage is assumed) for GSM/GPRS mode.
THERMAL PROPERTIES
(1)
Junction-to-Ambient Thermal Resistance (θJA), YFQ16 Package
50°C/W
(1) Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power
dissipation exists, special care must be paid to thermal dissipation issues in board design. Junction-to-ambient thermal resistance (θJA
)
is taken from a thermal modeling result, performed under the conditions and guidelines set forth in the JEDEC standard JESD51-7 and
is board-dependent.
4
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(1) (2) (3)
ELECTRICAL CHARACTERISTICS
Limits in standard typeface are for TA = TJ = 25°C. Limits in boldface type apply over the full operating ambient temperature
range (−30°C ≤ TJ = TA ≤ +90°C). Unless otherwise noted, specifications apply to the Typical Application Diagram with
VBATT = 3.8V (=PVIN = SVDD = PACB), VIO = 1.8V.
Symbol
VFB,MIN
Parameter
Condition
Min
Typ
Max
Units
Feedback voltage at minimum setting VSET[7:0] = 1Bh, SMPS_CFG[5] = 1b
0.350
0.4
0.450
V
Feedback voltage at maximum
setting
VSET[7:0] = F0h, VBATT = 3.9V,
SMPS_CFG[5] = 0b
SW = 0V, VIO = 0V(4)
VFB,MAX
3.492
3.6
3.708
4
ISHDN
Shutdown supply current
0.02
0.225
360
IL-PWR
IQ-PFM
IQ PWM
Low-power mode supply current
PFM mode supply current into SVDD No switching(5), SMPS_CFG[5] = 1b
VSET[7:0] = 00h
µA
425
1400
2.1
PWM mode supply current
No switching(5), SMPS_CFG[5] = 0b
1240
1.9
ILIM, PFET Transient Positive transient peak current limit
ILIM, PFET Steady-
State
Positive steady-state peak current
limit
1.35
1.4
1.45
1.7
1.65
2.0
VSET[7:0] = 64h(6)
A
Positive Active Current Assist peak
current limit
ILIM, P-ACB
ILIM,NFET
FOSC
NFET current limit
VSET[7:0] = A7h(6)
−1.50
Average Internal oscillator frequency VSET[7:0] = A7h
2.43
2.7
2.97
1.25
0.45
1.0
MHz
mA
V
IVIO-IN
VIORST
IINVIO
IIN
VIO voltage average input current
RFFE I/O voltage reset voltage
VIO reset current
Average during a 26 MHz
VIO toggled low
VIO = 0.45V
VIO = 1.95V
−1.0
−1.0
µA
SDATA, SCLK input current
1.0
Input high-level threshold SDATA,
SCLK
VIH
VIL
0.4* VIO
0.7 * VIO
0.6 * VIO
Input low-level threshold SDATA,
SCLK
0.3 * VIO
V
VIH-GPO
VIL-GPO
VOH
Input high-level threshold GPO1
Input low-level threshold GPO1
Output high-level threshold SDATA
Output low-level threshold SDATA
Output high-level threshold GPO
Output low-level threshold GPO
Output voltage LSB
1.35
0.67
VIO + 0.01
VIO * 0.2
VIO + 0.1
0.3
ISDATA = 2mA
ISDATA = –2mA
VIO * 0.8
VOL
V
VOH-GPO
VOL-GPO
VSET-LSB
VIO - 0.15
-0.4
IOUT = ±200 µA
VSET[7:0] = A7h to A8h
15
mV
(1) All voltages are with respect to the potential at the GND pins.
(2) Min and Max limits are specified by design, test, or statistical analysis.
(3) The parameters in the electrical characteristics table are tested under open loop conditions at PVIN = SVDD = PACB = 3.8V.
(4) Shutdown current includes leakage current of PFET.
(5) Iq specified here is when the part is not switching.
(6) Current limit is built-in, fixed, and not adjustable.
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SYSTEM CHARACTERISTICS
The following spec table entries are specified by design and verifications providing the component values in the Typical
Application Circuit are used (L = 1.5 µH, DCR = 120 mΩ, TOKO DFE201610MT-1R5N, CIN = 10 µF, 6.3V, 0402, Samsung
CL05A106MP5NUN, COUT = 10 µF + 4.7 µF + 3 x 1.0 µF; 10V, 0402, Samsung CL05A106MP5NUN, CL05A475MPNRN;
6.3V, 0201, TDK, C0603X5R0J105M). These parameters are not verified by production testing. Min and Max values are
specified over the ambient temperature range TA = -30°C to 90°C. Typical values are specified at VBATT = 3.8V (= PVIN =
SVDD = PACB), VIO = 1.8V, SMPS_CFG = 20h, and TA =25°C unless otherwise stated.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Turn-on time (time for output to reach
95% of 3.4V value from the end of the
SCLK pulse)
VBATT = 4.2V, VSET[7:0] =00h to
E3h, VSET = 3.4V, IOUT ≤ 1mA
TON
50
µs
Time for VOUT to rise from 0.09V to 3.4V
VBATT = 3.8V, RLOAD = 68Ω
(3.07V, 90% of delta VOUT from the end of VSET[7:0] = 06h to E3h
SCLK pulse)
SMPS_CFG[5] = 0b/1b
15
12
10
15
Time for VOUT to fall from 3.4V to 0.09V
(0.42V, 10% of delta VOUT from the end of VSET[7:0] = E3h to 06h
SCLK pulse)
VBATT = 3.8V, RLOAD = 68Ω
SMPS_CFG[5] = 0b/1b
Time for VOUT to rise from 0.8V to 3.3V
(3.05V, 90% of delta VOUT from the end of
SCLK pulse)
VBATT = 3.8V, RLOAD = 20Ω
VSET[7:0] =36h to DCh
7.4
6.8
Time for VOUT to fall from 3.3V to 0.8V
(1.05V, 10% of delta VOUT from the end of
SCLK pulse)
VBATT = 3.8V, RLOAD = 20Ω
VSET[7:0] = DCh to 36h
TRESPONSE
µs
Time for VOUT to rise from 1.4V to 3.4V
(3.2V, 90% of delta VOUT from the end of
SCLK pulse)
VBATT = 3.8V, RLOAD = 6.8Ω
VSET[7:0] = 5Eh to E3h
Time for VOUT to fall from 3.4V to 1.4V
(1.6V, 10% of delta VOUT from the end of
SCLK pulse)
VBATT = 3.8V, RLOAD = 6.8Ω
VSET[7:0] = E3h to 5Eh
Time for VOUT to rise from 1.8V to 2.8V
(2.7V, 90% of delta VOUT from the end of VSET[7:0] = 78h to BBh
SCLK pulse)
VBATT = 3.8V, RLOAD = 2.2Ω
SMPS_CFG[5] = 0b
Time for VOUT to fall from 2.8V to 1.8V
VBATT = 3.8V, RLOAD = 2.2Ω
(1.9V, 10% of delta VOUT from the end of VSET[7:0] = BBh to 78h
SCLK pulse) SMPS_CFG[5] = 0b
Time for VSET to rise from 0.09V to PVIN VBATT = 3.6V, IOUT ≤ 1mA,
TBypass
Rtot-drop
IOUT
20
55
µs
after BYPASS transition (90%)
VSET[7:0] = 06h to FFh
VSET[7:0] = FAh, Max value at VBATT
= 3.1V, Inductor DCR ≤ 151 mΩ
Total dropout resistance in bypass mode
Maximum load current in PWM mode
45
mΩ
Switcher + ACB
2.5
3.0
Maximum output transient pull-up current
limit
IOUT, PU
A
Switcher + ACB(1)
PWM maximum output transient pull-
down current limit
IOUT, PD, PWM
IOUT, MAX_PFM
−3.0
Maximum output load current in PFM
mode
VBATT = 3.8V, VSET = 3.2V
60
mA
VBATT = 3.9V(2), Monotonic in nature;
VSET[7:0] = 1Bh to F0h,
SMPS_CFG[5] = 0b
−3.0
−50
+3.0
+50
%
Linearity in control range of VSET = 0.4V
to 3.6V
Linearity
mV
(1) Current limit is built-in, fixed, and not adjustable.
(2) Linearity limits are ±3% or ±50 mV whichever is larger.
6
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SYSTEM CHARACTERISTICS (continued)
The following spec table entries are specified by design and verifications providing the component values in the Typical
Application Circuit are used (L = 1.5 µH, DCR = 120 mΩ, TOKO DFE201610MT-1R5N, CIN = 10 µF, 6.3V, 0402, Samsung
CL05A106MP5NUN, COUT = 10 µF + 4.7 µF + 3 x 1.0 µF; 10V, 0402, Samsung CL05A106MP5NUN, CL05A475MPNRN;
6.3V, 0201, TDK, C0603X5R0J105M). These parameters are not verified by production testing. Min and Max values are
specified over the ambient temperature range TA = -30°C to 90°C. Typical values are specified at VBATT = 3.8V (= PVIN =
SVDD = PACB), VIO = 1.8V, SMPS_CFG = 20h, and TA =25°C unless otherwise stated.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VBATT = 3.8V, VSET= 0.5V,
IOUT = 5mA
52
56
VBATT = 3.8V, VSET= 1.8V,
IOUT = 10 mA
78
83
90
93
81
89
82
89
94
95
85
92
VBATT = 3.8V, VSET= 1.6V,
IOUT = 130 mA
VBATT = 3.8V, VSET = 2.5V,
IOUT = 250 mA
η
Efficiency
%
VBATT = 3.8V, VSET = 3.4V,
IOUT = 550 mA
VBATT = 3.8V, VSET = 1.0V,
IOUT = 400 mA, SMPS_CFG[5] = 0b
VBATT = 3.8V, VSET = 3.5V,
IOUT = 1900 mA, SMPS_CFG[5] = 0b
VBATT = 3.2V to 4.3V, VSET = 0.4V to
3.6V, RLOAD = 1.9Ω(3)
SMPS_CFG[5]= 0b
2.7 MHz PWM normal operation ripple
1
3
8
VBATT = 3.2V, VSET = 3.0V,
(3)
Ripple voltage at pulse skipping condition RLOAD = 1.9Ω
SMPS_CFG[5]= 0b
VRIPPLE
mVpp
VBATT = 3.2V, VSET = 3.0V,
IOUT = 40 mA
VBATT = 3.2V, VSET = 2.5V,
IOUT = 10 mA
PFM ripple voltage
50
VBATT = 3.2V, VSET< 0.5V,
IOUT = 5 mA
VBATT = 3.6V to 4.2V,
TR = TF = 10 µs,
VSET = 3.2V,
Line_tr
Line transient response
50
60
IOUT = 500 mA
mVpk
VSET = 3.0V,
TR = TF = 10 µs,
IOUT = 0A to 1.2A,
SMPS_CFG[5] = 0b
Load_tr
Load transient response
Maximum duty cycle
Max Duty
Cycle
100
100
%
VBATT = 3.2V, VSET = 1.0V,
IOUT = 10 mA
160
55
PFM_Freq
Minimum PFM frequency
VSET DAC number of bits
KHz
VBATT = 3.2V, VSET = 0.5V,
IOUT = 5 mA
34
8
NSET
Monotonic
Bits
ns
Power-up time (time for RFFE bus active
after VIO applied)
TSETUP
TVIO-RST
VIO = Low to 1.65V
VIO = 0.45V
50
VIO supply reset timing
10
µs
(3) Ripple voltage should be measured at COUT electrode on a well designed PC board and using suggested inductor and capacitors.
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LM3263 USER STATE DIAGRAM
VIO = Low
VIO = High
VIO = Low
Shutdown
PM_T= 38h
and
PM_T= 40h
VC= 04h or 05h
Low Power
Standby
PM_T= 80h or 40h
or
PM_T= 80h or 40h
VC= 00h or 01h
or
VC= 04h or 05h
VC= 00h or 01h
PM_T= 38h
and
VC { 06h
VC{ 06h
Active
VIO = Low
PM_T = PM_TRIG [7:0]
VC = VSET_CTRL [7:0]
SMPS_CFG[5]= 0b
and
SMPS_CFG[5]= 1b
and
SMPS_CFG[4]= 1b
or
VC= 1Bh to F0h
VC= 1Bh to F0h
VC= FEh or FFh
Forced PWM mode
Auto-PFM mode
Forced Bypass mode
Note 1 : Specified Output Voltage range is 0.4V to 3.6V
Note 2: Writing to and reading back from REGISTER_0 and VSET_CTRL access the same internal VSET register.
Writing to VSET_CTRL programs the full 8 bits VSET value. Writing to REGISTER_0 will program 7 MSB of VSET
with LSB set to zero. When REGISTER_0 is written, the internal VSET register LSB bit[0] will always take a value
of 0 and subsequent read of VSET_CTRL bit[0] will be read back as 0.
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TYPICAL PERFORMANCE CHARACTERISTICS
(VBATT =3.8V, TA = 25°C, unless otherwise noted)
Input Current (PFM) vs Input Voltage
No Load
Input Current (PWM) vs Input Voltage
No Load
10
8
450
425
400
375
350
325
300
VOUT = 1.0V @ PFM mode
VOUT = 2.0V @ PWM Mode
6
4
2
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
2.5
3.0
3.5
4.0
4.5
5.0
5.5
INPUT VOLTAGE (V)
C001
C002
INPUT VOLTAGE ( V )
Figure 1.
Figure 2.
Average Switching Frequency vs. Input Voltage
Output Voltage vs. VSET_CTRL Setting
3.00
2.95
2.90
2.85
2.80
2.75
2.70
2.65
2.60
2.55
2.50
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VOUT = 2.0V, IOUT = 500mA
VBATT = 4.2V
RLOAD = 6.8ꢀ
0.0
0.5
22
1.0
43
1.5
VSET VOLTAGE ( V )
64 86 A7
2.0
2.5
3.0
C8
3.5
EA
4.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VSET_CTRL (hex)
C003
C004
INPUT VOLTAGE ( V )
Figure 3.
Figure 4.
Output Voltage vs. Input Voltage
VOUT = 3.4V
Efficiency vs. Load Current
Auto-PFM Mode, IOUT = 10mA to 150mA
3.6
3.4
3.2
3.0
2.8
2.6
100
95
90
85
80
75
70
65
60
IOUT = 500mA
VOUT = 0.8V
IOUT = 1.5A
VOUT = 1.0V
VOUT = 1.5V
VOUT = 1.8V
VOUT = 2.0V
VOUT = 0.4V
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
25
50
75
100
125
150
C005
C006
INPUT VOLTAGE ( V )
OUTPUT CURRENT ( mA )
Figure 5.
Figure 6.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
(VBATT =3.8V, TA = 25°C, unless otherwise noted)
Efficiency vs. Load Current
Auto-PFM Mode, IOUT = 150mA to 750mA
100
Efficiency vs. Load Current
Forced PWM Mode, IOUT = 100mA to 1000mA
100
95
90
85
80
75
70
95
90
85
VOUT = 1.6V
VOUT = 1.6V
VOUT = 2.0V
VOUT = 2.5V
VOUT = 3.0V
VOUT = 3.5V
80
VOUT = 2.0V
VOUT = 2.5V
75
VOUT = 3.0V
VOUT = 3.5V
70
100
200
300
400
500
600 700
800
100 200 300 400 500 600 700 800 900 1,000
C007
C008
OUTPUT CURRENT ( mA )
OUTPUT CURRENT ( mA )
Figure 7.
Figure 8.
Efficiency vs. Load Current
Forced PWM Mode, IOUT = 1.0A to 2.5A
VOUT Transient (Auto-PFM)
VOUT = 0.4V to 3.4V, RLOAD = 6.8Ω
100
95
90
85
80
75
70
65
60
VOUT (2V/DIV)
SDATA (2V/DIV)
IOUT (500mA/DIV)
VOUT = 2.0V
VOUT = 2.5V
VOUT = 3.0V
VOUT = 3.5V
TIME ( 20µs/DIV )
1.00
1.25
1.50
1.75
2.00
2.25
2.50
C009
C010
OUTPUT CURRENT ( A )
Figure 9.
Figure 10.
VOUT Transient (Forced PWM)
VOUT = 1.4V to 3.4V, RLOAD = 1.9Ω
Load Transient in PFM mode
VOUT=1.0V, IOUT=0mA to 60mA
VOUT (2V/DIV)
VOUT
5mVac/DIV
50mA/DIV
SDATA (2V/DIV)
IOUT (1A/DIV)
IOUT
100ꢀs/DIV
TIME ( 20µs/DIV )
C011
Figure 11.
Figure 12.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
(VBATT =3.8V, TA = 25°C, unless otherwise noted)
Load Transient
VOUT=2.5V, IOUT=0mA to 300mA
Load Transient
VOUT=3.0V, IOUT=0mA to 700mA
VOUT
50mVac/DIV VOUT
50mVac/DIV
500mA/DIV
IOUT
200mA/DIV
IOUT
100ꢀs/DIV
100ꢀs/DIV
Figure 13.
Figure 14.
Load Transient
VBATT=4.2V, VOUT=3.0V, IOUT=0mA to 1.2A
Line Transient
VBATT=3.6V to 4.2V, VOUT=2.5V, RLOAD=6.8Ω
VOUT
50mVac/DIV
VOUT
100mVac/DIV
VBATT
500mV/DIV
IOUT
500mA/DIV
100ꢀs/DIV
100ꢀs/DIV
Figure 15.
Figure 16.
Line Transient
VBATT=3.6V to 4.2V, VOUT=1.0V, RLOAD=6.8Ω
Timed-Current Limit
VBATT=4.2V, VOUT=2.5V, RLOAD=6.8Ω to 0Ω
VOUT
1V/DIV
2V/DIV
VOUT
50mVac/DIV
SW
VBATT
500mV/DIV
IIND
1A/DIV
100ꢀs/DIV
20ꢀs/DIV
Figure 17.
Figure 18.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
(VBATT =3.8V, TA = 25°C, unless otherwise noted)
Startup from Low-Power Mode
VBATT=4.2V, VOUT=3.4V, No Load
Startup from Standby Mode
VBATT=4.2V, VOUT=3.4V, No Load
SW
2V/DIV
SW
2V/DIV
VOUT
1V/DIV
2V/DIV
VOUT
1V/DIV
2V/DIV
SDATA
SDATA
10ꢀs/DIV
10µs/DIV
Figure 19.
Figure 20.
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OPERATION DESCRIPTION
Device Information
The LM3263 is a high-efficiency step-down DC-DC converter optimized to power the RF power amplifier (PA) in
cell phones, portable communication devices, or battery-powered RF devices with a single Li-ion battery. It
operates in modulated-frequency Pulsed Width Modulation (PWM) mode for 2G transmissions (with
MODE=Forced PWM (PWM only), register 01h SMPS_CFG [5] set to 0b), automatic mode transition between
Pulse Frequency Modulation (PFM) and PWM for 3G/4G RF PA operation (with MODE=Auto-PFM (PFM/PWM),
SMPS_CFG bit 5 set to 1b), or Forced-Bypass mode (with SMPS_CFG [4] set to 1b or REGISTER_0 [6:0] set to
7Fh or register 03h VSET_CTRL [7:0] set to FEh-FFh). Power states are also in provided Shutdown, Low Power,
Standby, and Active modes. The DC-DC converter operates at Active mode. Please see LM3263 USER STATE
DIAGRAM and PROGRAMMABLE REGISTERS sections in detail.
PWM mode provides high efficiency and very low output-voltage ripple. In PWM mode operation, the modulated
switching frequency helps to reduce RF transmit noise. In PFM mode, the converter operates with reduced
switching frequencies and lower supply current to maintain high efficiencies. The forced bypass mode allows the
user to drive the output directly from the input supply through a bypass FET. The shutdown mode turns the
LM3263 off and reduces current consumption to 0.02 µA (typ).
In PWM and PFM mode of operation, the output voltage of the LM3263 can be dynamically programmed from
0.4V to 3.6V (typ) by setting the VSET register. Current overload protection and thermal overload protection are
also provided.
The LM3263 was engineered with Active Current assist and analog Bypass (ACB). This unique feature allows
the converter to support maximum load currents of 2.5A (min.) while keeping a small footprint inductor and
meeting all of the transient behaviors required for operation of a multi-mode RF Power Amplifier. The ACB circuit
provides an additional current path when the load current exceeds 1.45A (typ.) or as the switcher approaches
dropout. Similarly, the ACB circuit allows the converter to respond with faster VSET output voltage transition
times by providing extra output current on rising and falling output edges. The ACB circuit also performs the
function of analog bypass. Depending upon the input voltage, output voltage, and load current, the ACB circuit
automatically and seamlessly transitions the converter into analog bypass, while maintaining output voltage
regulation and low output voltage ripple. Full bypass (100% duty cycle operation) will occur if the total dropout
resistance in bypass mode (Rtot_drop = 45 mΩ) is insufficient to regulate the output voltage.
The LM3263’s 16-bump DSBGA package is the best solution for space-constrained applications such as cell
phones and other hand-held devices. The high switching frequency, 2.7MHz (typ.) in PWM mode, reduces the
size of input capacitors, output capacitor and of the inductor. Use of a DSBGA package is best suited for opaque
case applications and requires special design considerations for implementation. (Refer to DSBGA Package
Assembly And Use section below).
PWM Operation
The LM3263 operates in PWM mode when Forced-PWM mode operation is selected (SMPS_CFG [5] set to 0b).
The switching frequency is modulated, and the switcher regulates the output voltage by changing the energy per
cycle to support the load required. During the first portion of each switching cycle, the control block in the
LM3263 turns on the internal PFET switch. This allows current to flow from the input through the inductor and to
the output filter capacitor and load. The inductor limits the current to a ramp with a slope of (VBATT – VSET)/L, by
storing energy in its magnetic field.
During the second portion of each cycle, the control block turns the PFET switch off, blocking current flow from
the input, and then turns the NFET synchronous rectifier on. The inductor draws current from ground through the
NFET and to the output filter capacitor and load, which ramps the inductor current down with a slope of -VSET/L.
The output filter capacitor stores charge when the inductor current is greater than the load current and releases it
when the inductor current is less than the load current, smoothing the voltage across the load.
At the next rising edge of the clock, the cycle repeats. An increase of load pulls the output voltage down,
increasing the error signal. As the error signal increases, the peak inductor current becomes higher therefore
increasing the average inductor current. The output voltage is therefore regulated by modulating the PFET switch
on time to control the average current sent to the load. The circuit generates a duty-cycle modulated rectangular
signal that is averaged using a low pass filter formed by the inductor and output capacitor. The output voltage is
equal to the average of the duty-cycle modulated rectangular signal.
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PFM Operation
When Auto-PFM mode operation is selected (SMPS_CFG [5] set to 1b), the LM3263 automatically transitions
from PWM operation into PFM operation if the average inductor current is less than 60 mA (min.) and the
difference between VBATT – VSET ≥ 0.6V. The switcher regulates the fixed output voltage by transferring a fixed
amount of energy during each cycle and modulating the frequency to control the total power delivered to the
output. The converter switches only as needed to support the demand of the load current, therefore maximizing
efficiency. If the load current should increase during PFM mode to more than 120 mA (typ.), the part will
automatically transition into PWM mode. A 20 mA (typ.) hysteresis window exists between PFM and PWM
transitions. After a transient event, the part temporarily operates in PWM mode to quickly charge or discharge the
output. This is true for startup conditions or if the mode operation is changed from Forced-PWM to Auto-PFM
mode (SMPS_CFG [5] toggled from 0b to 1b). Once the output reaches its target output voltage, and the load is
less than 60 mA (min.), then the part will seamlessly transition into PFM mode (assuming It is not in forced
bypass condition).
Active Current Assist and Analog Bypass (ACB)
The 3GPP time mask requirement for 2G requires high current to be sourced by the LM3263. These high
currents are required for a small time during transients or under a heavy load. Over-rating the switching inductor
for these higher currents would increase the solution size and is not an optimum solution. Thus, to allow an
optimal inductor size for such a load, an alternate current path is provided from the input supply through the ACB
pin. Once the switcher current limit ILIM,PFET,SteadyState is reached, the ACB circuit starts providing the additional
current required to support the load. The ACB circuit also minimizes the dropout voltage by having the analog
bypass FET in parallel with VSET. The LM3263 can provide up to 2.5A (min.) of current in bypass mode.
Bypass Operation
The Bypass Circuit provides an analog bypass function with very low dropout resistance (Rtot_drop = 45 mΩ typ).
When SMPS_CFG [4] is set to 0b, the part will be in automatic Bypass mode which will automatically determine
the amount of bypass needed to maintain voltage regulation. When the input supply voltage to the LM3263 is
lowered to a level where the commanded duty cycle is higher than what the converter is capable of providing, the
part will go into pulse-skipping mode. The switching frequency will be reduced to maintain a low and well
behaved output voltage ripple. The analog bypass circuit will allow the converter to stay in regulation until full
bypass is reached (100% duty cycle operation). The converter comes out of full bypass and back into analog
bypass regulation mode with a similar reverse process.
To operate the device at the Forced-Bypass mode, set REGISTER_0 to 7Fh or VSET_CTRL to FEh-FFh.
Shutdown Mode
The Shutdown mode is entered whenever the voltage on the VIO pin is 0V. The communications and the
controls are not powered. In this mode, the current consumption is 0.02 µA (typ.).
Low-Power Mode
The Low-Power mode is the initial default state when VIO is applied. In this mode, the DC-DC is disabled and its
SW is tri-state. The current consumption is minimized 0.225 µA (typ.). This mode can be entered by
programming any one of three registers below:
•
•
•
Register 00h REGISTER_0 [6:0] to 00h;
Register 03h VSET_CTRL[7:0] to 00h or 01h;
Register 1Ch PM_TRIG [7:6] to 10b.
Standby Mode
In Standby mode, switching is stopped, and the output power FETs are placed in tri-state. The Standby mode
can be entered by setting PM_TRIG [7:6] and REGISTER_0 or VSET_CTRL registers.
•
•
•
Register 00h REGISTER_0 [6:0] to 02h;
Register 03h VSET_CTRL [7:0] to 04h or 05h;
Register 1Ch PM_TRIG [7:6] to 00b.
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Active Mode
The Active mode is a DC-DC converter operating mode that allows the device to function, process RFFE
commands, and respond to RFFE commands. This mode can be entered by setting register 1Ch PM_TRIG [7:6]
to 00b. Once the device is the Active Mode, the DC-DC converter operating mode and the output voltage can be
programmed by using REGISTER_0 [6:0] and VSET_CTRL[7:0] registers.
Dynamic Adjustment of Output Voltage
The LM3263 can be dynamically programmed the output voltage from 0.4V to 3.6V with 30 mV or 15 mV steps.
REGISTER_0 [6:0] is set to 0Dh to 78h with 30 mV output voltage steps, and VSET_CTRL [7:0] is set to 1Bh to
F0h with 15 mV steps. Although the output voltage can be programmed lower than 0.4V and higher than 3.6V by
setting the registers, the device might suffer from larger output ripple voltage, higher current limit operation, and
decreased linearity.
DC-DC Operating Mode Selection
Programming SMPS_CFG [5] changes the state of the converter to one of the two allowed modes of operation.
SMPS_CFG [5] default is 0b and the device operates in Forced PWM mode (PWM only). Setting the register bit
to 1b sets the device for automatic transition between PFM/PWM mode operation. In this mode, the converter
operates in PFM mode to maintain the output voltage regulation at very light loads and transitions into PWM
mode at loads exceeding 120 mA (typ). Setting the register bit to 0b sets the device for PWM mode operation.
The switching operation is in PWM mode only, and the switching frequency is also 2.7 MHz (typ). The device
operates in Forced-Bypass mode when SMPS_CFG [4] is set to 1b.
For typical operation mode is set to Auto-PFM and Auto-Bypass modes by setting SMPS_CFG = 20h.
Table 1 shows the LM3263 parameters for the given modes.
Table 1. Parameters under Different Modes of Operation
SMPS_CFG [5] MODE
SMPS_CFG [4] BYPS
IOUT Conditions
Operation Mode
Forced-PWM
Forced-Bypass
PFM
0
X(1)
1
0
1
0
0
0
X
X
IOUT ≤ 60 mA
1
60 mA < IOUT ≤ 120 mA
PFM or PWM
PWM
1
IOUT > 120 mA
(1) doesn't care
Internal Synchronous Rectification
The LM3263 uses an internal NFET as a synchronous rectifier to reduce rectifier forward voltage drop, thus
increasing efficiency. The reduced forward voltage drop in the internal NFET synchronous rectifier significantly
improves efficiency for low output voltage operation. The NFET is designed to conduct through its intrinsic body
diode during the transient intervals, eliminating the need of an external diode.
Current Limit
The LM3263 current limit feature protects the converter during current overload conditions. Both SW and ACB
pins have positive and negative current limits. The positive and negative current limits bound the SW and ACB
currents in both directions. The SW pin has two positive current limits. The ILIM,PFET,SteadyState current limit triggers
the ACB circuit. Once the peak inductor current exceeds ILIM,PFET,SteadyState, the ACB circuit starts assisting the
switcher and provides just enough current to keep the inductor current from exceeding ILIM,PFET,SteadyState allowing
the switcher to operate at maximum efficiency. Transiently a second current limit ILIM,PFET,Transient of 1.9A (typ. or
2.1 max.) limits the maximum peak inductor current possible. The output voltage will fall out of regulation only
after both SW and ACB output pin currents reach their respective current limits of ILIM,PFET,Transient and ILIM,P-ACB
.
Timed Current Limit
If the load or output short-circuit pulls the output voltage to 0.3V or lower, and the peak inductor current sustains
ILIM,PFET,SteadyState more than 10 µs, the LM3263 switches to a timed current limit mode. In this mode, the internal
PFET switch is turned off. After approximately 30 µs, the device will return to the normal operation.
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Thermal Overload Protection
The LM3263 IC has a thermal overload protection that protects itself from short-term misuse and overload
conditions. If the junction temperature exceeds 150°C, the LM3263 shuts down. Normal operation resumes after
the temperature drops below 125°C. Prolonged operation in thermal overload condition may damage the device
and is therefore not recommended.
Startup
The waveform in Figure 21 shows the startup sequence and sample condition. First, VBATT
(=PVIN=SVDD=PACB) should take on a value between 2.7V and 5.5V. After VBATT is ensured to be beyond
2.7V, VIO can be set 1.8V. Next, setting PM_TRIG [7:6] to 38h will enable Active mode. Finally, VSET can be
programmed to a value that corresponds to the desired output voltage. The LM3263 output voltage will then go
to the programmed VSET value. To optimize the startup time and behavior of the output voltage, the LM3263 will
start up in PWM mode even when the operating mode selected is Auto-PFM mode (SMPS_CFG [5] set to 1b) if
the output load current is ≤ 60 mA (min.), the LM3263 will then seamlessly transition into PFM mode.
Shutdown
Low Power
Initialization
Active
APT
50 ms max
25 ms max
5 ms (min)
VBATT applied, VIO = 0V.
LM3263 in Shutdown.
t0
t1
t2
VIO applied.150 ns later LM3263 is in
Low Power and RFFE configuration
writes may occur. Trigger Mask Bits
are set.
VBATT
VIO
VSET is programmed and takes effect
immediately. LM3263 initializes and
powers up internal circuit blocks.
SDATA
t3
t4
DC-DC is active in normal mode.
3.4V
0V
VOUT
SW
Transmit Slot Boundary. DC-DC
output settled (95%).
t0
t1
t3
t4
t2
RFFEwrite
VSET=DC-DCVOUT
(Reg03h=E3h)
RFFEwrite
PM_TRIG
(Reg1Ch=38h)
RFFEwrite
SMPS_CFG=autoPFM
(Reg01h=20h)
Figure 21. Non-Triggered Startup Sequence
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Shutdown
Low Power
Initialization
Active
APT
50 ms max
25 ms max
5 ms (min)
VBATT applied, VIO = 0V.
LM3263 in Shutdown.
t0
t1
t2
VIO applied.150ns later
LM3263 is in Low Power, and
RFFE configuration writes may
occur.
VBATT
VIO
Trigger is programmed. VSET and
SMPS_CFG loaded from shadow
registers. LM3263 initializes and
powers up internal circuit blocks.
SDATA
t3
t4
DC-DC is active in normal mode.
3.4V
VOUT
SW
0V
Transmit Slot Boundary. DC-DC
output settled (95%).
t0
t1
t3
t4
t2
RFFEwrite
VSET=DC-DCVOUT
(Reg03h=E3h)
RFFEwrite
SMPS_CFG=autoPFM
(Reg01h=20h)
RFFEwrite
PM_TRIG
(Reg1Ch=02h)
Figure 22. Triggered Startup Sequence
RFFE Interface
The Digital Control Serial Bus Interface provides MIPI RF Front-End Control Interface compatible access to the
programmable functions and registers on the device. The LM3263 uses a three-pin digital interface; two for
bidirectional communications between the IC’s connected to the bus, along with an interface voltage reference
VIO that also acts as asynchronous enable and reset. When VIO voltage supply is applied to the Bus, it enables
the Slave interface and resets the user-defined Slave registers to the default settings. The LM3263 can be set to
shutdown mode via the asynchronous VIO signal or low-power mode by setting the appropriate register via Serial
Bus Interface. The two communication lines are serial data (SDATA), and clock (SCLK). SCLK and SDATA must
be held low until VIO is present. The LM3263 connects as slave on a single-master Serial Bus Interface.
The SDATA signal is bidirectional, driven by the Master or a Slave. Data is written on the rising edge (transition
from logical level zero to logical level one) of the SCLK signal by both Master and Slaves. Master and Slave both
read the data on the falling edge (transition from logical level one to logical level zero) of the SCLK signal. A
logic-low level applied to VIO signal powers off the digital interface.
Supported Command Sequences
SCLK
SDATA
SA3
SA2
SA1
SA0
1
D6
D5
D4
D3
D2
D1
D0
P
0
Parity
Bus
Park
SSC
Slave Address
Data
Signal driven by Master.
Signal not driven; pull-down only.
For reference only.
Figure 23. Register 0 Write
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SCLK
A
SDATA
SA3
SA2
SA1
SA0
0
1
0
A4
A3
A2
A1
A0
P
SSC
Register Write Command Frame
SCLK
A
SDATA
P
D7
D6
D5
D4
D3
D2
D1
D0
P
0
Bus
Park
Data Frame
Signal driven by Master.
Signal not driven; pull-down only.
For reference only.
Figure 24. Register Write
SCLK
A
SDATA
SA3
SA2
SA1
SA0
0
1
1
A4
A3
A2
A1
A0
P
SSC
Register Read Command Frame
SCLK
A
SDATA
P
0
D7
D6
D5
D4
D3
D2
D1
D0
P
0
Data Frame (from Slave)
Bus
Bus
Park
Park
Signal driven by Master.
Signal driven by Slave.
Signal not driven; pulldown only.
For reference only.
Figure 25. Register Read
Device Enumeration
The interface component recognizes broadcast Slave Address (SID) of 0000b and is configured, via internal
interface signals, with a Unique SID address (USID) and a Group SID address (GSID). The USID is set to 0100b
and GSID set to 0000b. The register-set component will typically set the USID to a fixed value; however, it is also
possible to select a second pre-set USID if a second LM3263 is needed on the board. This second User ID can
be set by forcing a voltage > 1.36V at the GPO1 pin for USID = 0101b. Please refer to GPO1 for detailed usage
and programmability of the USID. The USID can also be re-programmed via the standard protocol for
programming the RFFE as defined in the RFFE spec. The USID should not be programmed to the reserved
broadcast slave id of 0000b. A value of 0000b will be ignored by the device.
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GPO1
GPO1 has two functions. The first function is an input to select the default USID and the second function is to be
a general purpose output.
The state of the GPO1 pin at startup determines the default USID. If the GPO1 pin is low or left floating at
startup, the USID is 0100b. If the GPO1 pin is high at startup, the USID is 0101b. One method to set the GPO1
pin high is to place a pull-up resistor (39KΩ) on the GPO1 pin.
When the GPO1 pin is used as the general purpose output, GPO_CTRL [6] needs to be set to 1b. Once it has
been enabled as the general purpose output, GPO_CTRL [7] will determine the state driven to the GPO1 pin.
The pull-up resistor needs to be placed either as an external pull-up on the board or through an internal pull-up
on the general purpose input which is tied to the GPO1 pin.
The GPO1 pin can be left floating if unused.
Trigger Registers
Trigger registers are indicated in the RFFE register map by the “Trigger” column. All trigger registers are tied to
each of the TRIG_0-2 register bits. When a trigger register is written directly across the RFFE interface, the new
value will not be loaded into the register until one of the TRIG0-2 register bits is written with a ‘1’ and the
associated TRIG_MSK_x bit for that TRIG_x is not set. (Triggers are ignored when their associated masking bit
is set.) When all 3 TRIG_MSK_0-2 bits are set (all triggers are masked) the trigger feature is disabled and any
trigger registers will be loaded directly at the time of the write operation to that register rather than waiting for a
trigger event to update.
Control Interface Timing Parameters
T
T
SCLKOTR
SCLKOTR
T
T
SCLKOL
SCLKOH
V
OHmin
SCLK
V
OLmax
Figure 26. Clock Timing
V
TPmax
SCLK
V
TNmin
T
D
T
D
T
T
SDATAOTR
SDATAOTR
T
T
H
S
T
S
T
H
V
TPmax
SDATA
V
TNmin
Figure 27. Setup and Hold Timing
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Units
Symbol
TCLK
Parameter
Clock Time Period
Min
38.5
11.25
11.25
1
Typ
Max
TSCLKOH
TSCLKOL
TS
Clock High Time
Clock Low Time
Data Setup Time
ns
TH
Data Hold Time
5
TD-Forward
TD-Reverse
TSDATAOTR
Time for Data Output Valid from SCLK rising edge
Time for Data Output Valid from SCLK rising edge
SDATA Output Transition (Rise/Fall) Time
10.25
22
2.1
6.5
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PROGRAMMABLE REGISTERS
Addr
00h
Register Contents
REGISTER _0
Bits
Function
Default
Trigger*
R/W
Description
7
RSVD
0
N/A
N/A
Reserved
Register 00h interacts with Register 03h.
DC-DC converter mode and output voltage control bits
00h : Low-Power Mode
01h : Reserved
02h : Standby Mode
03h to 7Eh : Active Mode, Setting Output Voltage is
enabled. Output voltage can be set 0.4V to 3.6V by
0Dh to 78h with 30 mV steps
6:0
VSET[7:1]
00h
Yes
R/W
7Fh : Forced-Bypass Mode
VSET[7:1] (dec) = Desired VOUT / 0.03 (round up
decimals), then converts a decimal number to
hexadecimal.
01h
SMPS_CFG
R/W
Bits
Function
Default
Trigger*
Description
7:6
RSVD
0
N/A
N/A
Reserved
Switching mode select bit
5
MODE
0
Yes
R/W
R/W
0: Forced PWM Mode (PWM only)
1: Auto-PFM Mode (PFM/PWM)
Forced bypass bit
0: Auto-Bypass Mode
1: Forced-Bypass Mode
4
BYPS
RSVD
0
Yes
N/A
3:0
0h
N/A
GPO_CTRL
R/W
Reserved
02h
Bits
Function
Default
Trigger*
Description
GPO1 output control
0: Low state
1: High state
7
GPO1_OUT
0
Yes
R/W
R/W
GPO1 Mode Selection
0 : General Purpose Output disabled
1 : General Purpose output driven by GPO1_OUT.
6
GPO1_MODE
RSVD
0
Yes
N/A
5:0
00h
N/A
VSET_CTRL
R/W
Reserved
03h
Bits
Function
Default
Trigger*
Description
DC-DC converter mode and output voltage fine control
bits
00h-01h : Low-Power Mode
02h-03h : Reserved
04h-05h : Standby Mode
06h to FDh : Active Mode, Setting Output Voltage is
enabled. Output voltage can be set 0.4V to 3.6V by
1Bh to F0h with 15 mV steps
7:0
VSET[7:0]
00h
Yes
R/W
FEh-FFh : Forced Bypass Mode.
VSET[7:0] (dec) = Desired VOUT / 0.015 (round up
decimals), then converts a decimal number to
hexadecimal.
1Ah
RFFE_STATUS
Trigger* R/W
Bits
Function
Default
Description
7
Software Reset. A write to '1' will cause all registers
except for USID to be reset. Will always read back '0'.
SWRESET
0
No
No
6
5
4
Set if parity error detected in command frame. Cleared
on read. Write will have no effect on this bit.
CMD_FRAME_PERR
0
Error when transaction interrupted by new SSC.
Cleared on read. Write will have no effect on this bit.
CMD_LENGTH_ERR
RSVD
0
0
No
No
Reserved
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Addr
Register Contents
Write data frame parity error. Cleared on read. Write
3
DATA_FRAME_PERR
RD_UNUSED_REG
WR_UNUSED_REG
BID_GID_ERR
0
0
0
0
No
will have no effect on this bit.
2
1
0
Read command to an invalid register. Cleared on read.
Write will have no effect on this bit.
No
No
No
Write command to an invalid register. Cleared on read.
Write will have no effect on this bit.
Read command with a broadcast ID or Group ID.
Cleared on read. Write will have no effect on this bit.
1Bh
Bits
7:4
GROUP_ID
R/W
Function
RSVD
Default
0h
Trigger*
N/A
Description
Reserved
N/A
3:0
GSID
0h
No
Group Slave ID.
1Ch
Bits
PM_TRIG
R/W
Function
Default
Trigger*
Description
Power Mode Bits.
00b = Active Mode
7:6
PWR_MODE
10b
No
R/W
01b = Restore default settings
10b = Low-Power Mode
11b = Reserved
Mask bit for Trigger 2. Broadcast write to this bit is
ignored.
5
4
3
TRIG_MSK_2
TRIG_MSK_1
TRIG_MSK_0
0
0
0
No
No
No
Mask bit for Trigger 1. Broadcast write to this bit is
ignored.
Mask bit for Trigger 0. Broadcast write to this bit is
ignored.
Write to a '1' loads trigger registers with last written
value TRIG_MSK_2 is cleared. Write to '0' has no
affect.
2
1
0
TRIG_2
TRIG_1
TRIG_0
0
0
0
No
No
No
Write to a '1' loads trigger registers with last written
value TRIG_MSK_1 is cleared. Write to '0' has no
effect.
Write to a '1' loads trigger registers with last written
value TRIG_MSK_0 is cleared. Write to '0' has no
effect.
1Dh
Bits
PRODUCT ID
Function
Default
Trigger*
R/W
Description
Product Identification Bits. Product ID default value
cannot be overwritten.
7:0
PRODUCT_ID
82h
No
R
1Eh
Bits
MANUFACTURER ID, LSB
Function
Default
Trigger*
R/W
Description
Manufacturer Identification, bits 7:0. Manufacturer ID
default value cannot be overwritten.
7:0
MANID[7:0]
02h
No
R
1Fh
Bits
7:6
MANUFACTURER ID, MSB
Function
Default
Trigger*
R/W
Description
RSVD
00b
N/A
N/A
Reserved
Manufacturer Identification, bits 5:4. Manufacturer ID
default value cannot be overwritten.
5:4
MANID[5:4]
USID
01b
No
No
R
Unique Slave Identifier. Bit 0 (x) of USID is tied to the
state of the GPO1 pin.
0100b: GPO1= Low state or floating
0101b: GPO1= High state
3:0
010xb
* Trigger=Yes: When all PM_TRIG.TRIG_MSK_* bits are set '1', REGISTER_0 will be written immediately during
a write operation. If any PM_TRIG.TRIG_MSK_* bits are cleared ('0'), REGISTER_0 will not be updated to the
new value after a write operation only after an unmasked PM_TRIG.TRIG_* bit is subsequently written to a '1'.
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APPLICATION INFORMATION
Recommended External Components
Inductor Selection
A 1.5 µH inductor is needed for optimum performance and functionality of the LM3263. In the case of 2G
transmission current bursts, the effective overall RMS current requirements are reduced. Therefore, please
consult with the inductor manufacturers to determine if some of their smaller components will meet your
application needs even though the classical inductor specification does not appear to meet the LM3263 RMS
current specifications.
The LM3263 automatically manages the inductor peak and RMS current (or steady-state current peak) through
the SW pin. The SW pin has two positive current limits. The first is the 1.45A typical (or 1.65A maximum) over-
current protection. It sets the upper steady-state inductor peak current (as detailed in the Electrical
Characteristics Table ILIM,PFET,SteadyState). It is the dominant factor limiting the inductors ISAT requirement. The
second is an over-limit current protection. It limits the maximum peak inductor current during large signal
transients (i.e., < 20 µs) to 1.9A typical (or 2.1A maximum). A minimum inductance of 0.3uH should be
maintained at the second current limit.
The ACB circuit automatically adjusts its output current to keep the steady-state inductor current below the
steady-state peak current limit. Thus, the inductor RMS current will effectively always be less than the
ILIM,PFET,SteadyState during the transmit burst. In addition, as in the case with 2G where the output current comes in
bursts, the effective overall RMS current would be much lower.
For good efficiency, the inductor’s resistance should be less than 0.2Ω; low DCR inductors (<0.2Ω) are
recommended. Table 2 suggests some inductors and their suppliers.
Table 2. Suggested Inductors and Their Suppliers
ISAT
Model
DFE201610C1R5N
(1285AS-H-1R5M)
LQM2MPN1R5MG
MAKK2016T1R5M
VLS201610MT-1R5N
Vendor
Dimensions (mm)
(30% drop in
inductance)
DCR
TOKO
2.2A
120 mΩ
Murata
Taiyo-Yuden
TDK
2.0A
1.9A
1.4A
110 mΩ
115 mΩ
151 mΩ
2.0 x 1.6 x 1.0
Capacitor Selection
The LM3263 is designed to use ceramic capacitors for its input and output filters. Use a 10 µF capacitor for the
input and approximately 10 µF actual total output capacitance. Capacitor types such as X5R, X7R are
recommended for both filters. These provide an optimal balance between small size, cost, reliability and
performance for cell phones and similar applications. Table 3 lists suggested part numbers and suppliers. DC
bias characteristics of the capacitors must be considered while selecting the voltage rating and case size of the
capacitor. Smaller case sizes for the output capacitor mitigate piezo-electric vibrations of the capacitor when the
output voltage is stepped up and down at fast rates. However, they have a bigger percentage drop in value with
dc bias. For even smaller total solution size, 0402 (1005) case size capacitors are recommended for filtering. Use
of multiple 2.2 µF or 1µF capacitors can also be considered. For RF Power Amplifier applications, split the output
capacitor between DC-DC converter and RF Power Amplifiers: 10 µF (COUT1) + 4.7 µF (COUT2) + 3 x 1.0 µF
(COUT3) is recommended. The optimum capacitance split is application dependent, and for stability the actual
total capacitance (taking into account effects of capacitor DC bias, temperature de-rating, aging and other
capacitor tolerances) should target 10 µF with 2.5V DC bias (measured at 0.5 VRMS). Place all the output
capacitors very close to the respective device. A high-frequency capacitor (3300 pF) is highly recommended to
be placed next to COUT1
.
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Table 3. Suggested Capacitors and Their Suppliers
Capacitance
10 µF
Model
Size (WxL) (mm)
1.6 x 0.8
Vendor
Murata
GRM185R60J106M
CL05A106MP5NUN
CL05A475MP5NRN
CL03A105MP3CSN
C0603X5R0J105M
GRM022R60J332K
10 µF
1.0 x 0.5
Samsung
Samsung
Samsung
TDK
4.7 µF
1.0 x 0.5
1.0 µF
0.6 x 0.3
1.0 µF
0.6 x 0.3
3300 pF
0.4 x 0.2
Murata
DSBGA Package Assembly And Use
Use of the DSBGA package requires specialized board layout, precision mounting, and careful re-flow
techniques, as detailed in Texas Instruments Application Note 1112 (SNVA009). Refer to the section Surface
Mount Technology (SMD) Assembly Considerations. For best results in assembly, alignment ordinals on the PC
board should be used to facilitate placement of the device. The pad style used with DSBGA package must be the
NSMD (non-solder mask defined) type. This means that the solder-mask opening is larger than the pad size.
This prevents a lip that otherwise forms if the solder-mask and pad overlap from holding the device off the
surface of the board and interfering with mounting. See Application Note 1112 for specific instructions how to do
this.
The 16-bump package used for the LM3263 has 265 micron (nominal) solder balls and requires 0.225 mm pads
for mounting the circuit board. The trace to each pad should enter the pad with a 90º entry angle to prevent
debris from being caught in deep corners. Initially, the trace to each pad should be about 0.142 mm wide, for a
section approximately 0.127 mm long, as a thermal relief. Then each trace should neck up or down to its optimal
width.
An important criterion is symmetry to insure the solder bumps on the LM3263 re-flow evenly and that the device
solders level to the board. In particular, special attention must be paid to the pads for bumps A1, A3, B1, and B3
since PGND, PVIN and BGND are typically connected to large copper planes; inadequate thermal relief can
result in inadequate re-flow of these bumps.
The DSBGA package is optimized for the smallest possible size in applications with red-opaque or infrared-
opaque cases. Because the DSBGA package lacks the plastic encapsulation characteristic of larger devices, it is
vulnerable to light. Backside metallization and/or epoxy coating, along with front-side shading by the printed
circuit board, reduce this sensitivity. However, the package has exposed die edges that are sensitive to light in
the red and infrared range shining on the package’s exposed die edges.
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PCB LAYOUT CONSIDERATIONS
1. Overview
PC board layout is critical to successfully designing a DC-DC converter into a product. A properly planned board
layout optimizes the performance of a DC-DC converter and minimizes effects on surrounding circuitry while also
addressing manufacturing issues that can have adverse impacts on board quality and final product yield.
2. PCB
Poor board layout can disrupt the performance of a DC-DC converter and surrounding circuitry by contributing to
EMI, ground bounce, and resistive voltage loss in the traces. Erroneous signals could be sent to the DC-DC
converter IC, resulting in poor regulation or instability. Poor layout can also result in re-flow problems leading to
poor solder joints between the DSBGA package and board pads. Poor solder joints can result in erratic or
degraded performance of the converter.
Energy Efficiency
Minimize resistive losses by using wide traces between the power components and doubling up traces on
multiple layers when possible.
EMI
By its very nature, any switching converter generates electrical noise. The circuit board designer’s challenge is to
minimize, contain, or attenuate such switcher-generated noise. A high-frequency switching converter, such as the
LM3263, switches Ampere level currents within nanoseconds, and the traces interconnecting the associated
components can act as radiating antennas. The following guidelines are offered to help to ensure that EMI is
maintained within tolerable levels.
To help minimize radiated noise:
•
Place the LM3263 DC-DC converter, its input capacitor, and output filter inductor and capacitor close
together, and make the interconnecting traces as short as possible.
•
Arrange the components so that the switching current loops curl in the same direction. During the first half of
each cycle, current flows from the input filter capacitor, through the internal PFET of the LM3263 and the
inductor, to the output filter capacitor, then back through ground, forming a current loop. In the second half of
each cycle, current is pulled up from ground, through the internal synchronous NFET of the LM3263 by the
inductor, to the output filter capacitor and then back through ground, forming a second current loop. Routing
these loops so the current curls in the same direction prevents magnetic field reversal between the two half-
cycles and reduces radiated noise.
•
•
Make the current loop area(s) as small as possible. Interleave doubled traces with ground planes or return
paths, where possible, to further minimize trace inductances.
The Active Current Assist and Bypass (ACB) trace should be kept short and routed directly from ACB pads to
the VOUT pad at the inductor.
To help minimize conducted noise in the ground-plane:
•
Reduce the amount of switching current that circulates through the ground plane: Connect PGND bump of the
LM3263 and its input filter capacitor together using generous component-side copper fill as a pseudo-ground
plane. Then connect this copper fill to the system ground-plane (if one is used) by multiple vias located at the
input filter capacitor ground terminal. The multiple vias help to minimize ground bounce at the LM3263 by
giving it a low-impedance ground connection. Do not route the PGND pad directly to the RF ground plane.
•
•
An additional high frequency capacitor in 01005 (0402 mm) case size is also recommended between PVIN
and the RF ground plane. Do not connect to PGND directly.
For optimum RF performance connect the output capacitor ground to the RF ground or System ground plane.
Do not connect to PGND directly.
To help minimize coupling to the DC-DC converter's own voltage feedback trace:
•
Route noise sensitive traces, such as the voltage feedback path (FB), as directly as possible from the DC-DC
converter FB pad to the VOUT pad of the output capacitor, but keep it away from noisy traces between the
power components.
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To help minimize noise coupled back into power supplies:
•
Use a star connection to route from the VBATT power input to DC-DC converter PVIN and to
VBATT_PA.
•
•
•
•
Route traces for minimum inductance between PVIN pads and the input capacitor(s).
Route traces to minimize inductance between the input capacitors and the ground plane.
Maximize power supply trace inductance(s) to reduce coupling among function blocks.
Inserting a ferrite bead in-line with power supply traces can offer a favorable tradeoff in terms of board area,
by attenuating noise that might otherwise propagate through the supply connections, allowing the use of
fewer bypass capacitors.
3. Manufacturing Considerations
The LM3263 package employs a 16-bump (4x4) array of 0.24 mm solder balls, with a 0.4 mm pad pitch. A few
simple design rules will go a long way to ensuring a good layout.
•
•
Pad size should be 0.225 ± 0.02 mm. Solder mask opening should be 0.325 ± 0.02 mm.
As a thermal relief, connect to each pad with 9 mil wide, 6 mil long traces and incrementally increase each
trace to its optimal width. Symmetry is important to ensure the solder bumps re-flow evenly. Refer to TI
Application Note AN-1112 DSBGA Wafer Level Chip Scale Package (SNVA009).
4. LM3263 RF Evaluation Board
VBATT
2.7V to 5.5V
10 µF
0.1 µF
PVIN
PACB
LM3263
SGND
SVDD
FB
VIO
ACB
1.8V
Output Voltage
0.4V to 3.6V
RFFE
Master
1.5 µH
SCLK
SW
SDATA
GPO1
3.3 nF
10 µF
4.7 µF
VBATT_PA
PA
MMMB
BGND
PGND
VCC_PA
1.0 µF
3G/4G
VCC_PA
PA
Figure 28. Simplified LM3263 RF Evaluation Board Schematic
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Board Layout Overview
LM3263 DC-DC Converter
3G/4G PA
Multi-Mode Multi-Band PA
Figure 29. Top View of RF Evaluation board with PAs
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DC-DC Converter
VBATT Input
from board edge
RF bypass to
RF GND Plane
Inductor
Input Cap
(RF)
Output Cap
(RF)
RF bypass to
RF GND Plane
Output Cap
(Main)
Input Cap
(Main)
LM3263
Input Capground side is connected to
PGND pin. PGND island should be isolated
on the top layer andconnectedto system
ground plane directly with multi vias.
Inductance
Minimized
Figure 30. Top Layer
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DC-DC Converter, cont'd
Inductor
Input Cap
(RF)
Output Cap
(RF)
Output Cap
(Main)
PVIN can be connected to CIN
with multi-vias if Power plane is in
an innner plane.
LM3263
FB trace
(low current)
Input Cap
(Main)
PACB
Connection
to CIN
SVDD
Connection
to CIN
Figure 31. Board Layer 2 – FB, SVDD, PACB, PVIN
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DC-DC Converter, cont'd
Control Traces Routed
Away From PowerTraces
Same net, but should be
kept isolated on this layer
Inductor
Input Cap
(RF)
Output Cap
(RF)
Output Cap
(Main)
SW: Short,
20 mil min width
LM3263
ACB : 20 mil min width.
ACB trace can be placedin
other layer if more layers
are available.
Input Cap
(Main)
Figure 32. Board Layer 3 – SW, ACB
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DC-DC Converter, cont'd
VCC_PA:
Connects Directly To
Cout at This Point
Input Cap
Inductor
(RF)
Output Cap
(RF)
Output Cap
(Main)
Input Cap
(Main)
LM3263
VCC_PA:
Wide, High-Current Trace
Figure 33. Board Layer 4 – VCC_PA, SYSTEM GND PLANE
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DC-DC Converter, cont'd
VBATT:
Wide,High-Current
Trace
Inductor
Input Cap
(RF)
Output Cap
(RF)
Output Cap
(Main)
Input Cap
(Main)
LM3263
Figure 34. Board Layer 5 – VBATT Connection
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Star Connection between VBATT, DC-DC Converter, and PA
VBATT Star
Connection
VBATT Connection for
DC -DC Converter
VBATT BUS
Connection for PA(s)
Figure 35. Multiple Board Layers – VBATT Supply Star Connection
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VBATT Star Connection
It is critically important to use a “Star” connection from VBATT supply to the LM3263 PVIN and from VBATT to
PA modules as implementing a “daisy chain” supply connection may add noise to the PA output.
Star Connection at VBATT
VBATT_PA
VBATT_PA
VIN DC-DC
*
*
VIN
PA
PA
VBATT
+
_
LM3263
* Proper decoupling on VBATT_PA is Strongly recommended.
Figure 36. VBATT Star Connection on PCIN and VBATT_PA
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PACKAGE OPTION ADDENDUM
www.ti.com
4-Jul-2013
PACKAGING INFORMATION
Orderable Device
LM3263TME/NOPB
LM3263TMX/NOPB
Status Package Type Package Pins Package
Eco Plan Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
-30 to 90
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
ACTIVE
DSBGA
DSBGA
YFQ
16
16
250
Green (RoHS
& no Sb/Br)
SNAGCU
SNAGCU
Level-1-260C-UNLIM
S61
S61
ACTIVE
YFQ
3000
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
-30 to 90
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
2-Jul-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM3263TME/NOPB
LM3263TMX/NOPB
DSBGA
DSBGA
YFQ
YFQ
16
16
250
178.0
178.0
8.4
8.4
2.08
2.08
2.08
2.08
0.76
0.76
4.0
4.0
8.0
8.0
Q1
Q1
3000
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
2-Jul-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LM3263TME/NOPB
LM3263TMX/NOPB
DSBGA
DSBGA
YFQ
YFQ
16
16
250
210.0
210.0
185.0
185.0
35.0
35.0
3000
Pack Materials-Page 2
MECHANICAL DATA
YFQ0016x
D
0.600±0.075
E
TMD16XXX (Rev A)
D: Max = 2.049 mm, Min =1.989 mm
E: Max = 2.049 mm, Min =1.989 mm
4215081/A
12/12
A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994.
B. This drawing is subject to change without notice.
NOTES:
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Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
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