LM334MWC [TI]
3-Terminal Adjustable Current Sources;
| 型号： | LM334MWC |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 3-Terminal Adjustable Current Sources |
| 文件： | 总26页 (文件大小：1238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM134, LM234, LM334
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SNVS746E –MARCH 2000–REVISED MAY 2013
LM134/LM234/LM334 3-Terminal Adjustable Current Sources
Check for Samples: LM134, LM234, LM334
1
FEATURES
The sense voltage used to establish operating current
2
•
•
•
•
•
Operates From 1V to 40V
in the LM134 is 64mV at 25°C and is directly
proportional to absolute temperature (°K). The
simplest one external resistor connection, then,
generates a current with ≈+0.33%/°C temperature
dependence. Zero drift operation can be obtained by
adding one extra resistor and a diode.
0.02%/V Current Regulation
Programmable From 1μA to 10mA
True 2-Terminal Operation
Available as Fully Specified Temperature
Sensor
Applications for the current sources include bias
networks, surge protection, low power reference,
ramp generation, LED driver, and temperature
sensing. The LM234-3 and LM234-6 are specified as
true temperature sensors with ensured initial
accuracy of ±3°C and ±6°C, respectively. These
devices are ideal in remote sense applications
because series resistance in long wire runs does not
affect accuracy. In addition, only 2 wires are required.
•
±3% Initial Accuracy
DESCRIPTION
The LM134/LM234/LM334 are 3-terminal adjustable
current sources featuring 10,000:1 range in operating
current, excellent current regulation and a wide
dynamic voltage range of 1V to 40V. Current is
established with one external resistor and no other
parts are required. Initial current accuracy is ±3%.
The LM134/LM234/LM334 are true floating current
sources with no separate power supply connections.
In addition, reverse applied voltages of up to 20V will
draw only a few dozen microamperes of current,
allowing the devices to act as both a rectifier and
current source in AC applications.
The LM134 is specified over a temperature range of
−55°C to +125°C, the LM234 from −25°C to +100°C
and the LM334 from 0°C to +70°C. These devices
are available in TO hermetic, TO-92 and SOIC-8
plastic packages.
Connection Diagrams
Figure 1. SOIC-8 Surface Mount Package
(LM334M; LM334M/NOPB; LM334MX;
LM334MX/NOPB)
Figure 2. SOIC-8 Alternative Pinout Surface Mount
Package
(LM334SM; LM334SM/NOPB; LM334SMX;
LM334SMX/NOPB)
See Package Number D
See Package Number D
Figure 3. TO Metal Can Package (Bottom View)
See Package Number NDV
Figure 4. TO-92 Plastic Package (Bottom View)
See Package Number LP
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2000–2013, Texas Instruments Incorporated
LM134, LM234, LM334
SNVS746E –MARCH 2000–REVISED MAY 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)(2)
V+ to V− Forward Voltage
LM134/LM234/LM334
LM234-3/LM234-6
40V
30V
V+ to V− Reverse Voltage
R Pin to V− Voltage
Set Current
20V
5V
10 mA
Power Dissipation
400 mW
2000V
ESD Susceptibility(3)
Operating Temperature Range(4)
LM134
−55°C to +125°C
−25°C to +100°C
0°C to +70°C
260°C
LM234/LM234-3/LM234-6
LM334
Soldering Information
TO-92 Package (10 sec.)
TO Package (10 sec.)
SOIC Package
300°C
Vapor Phase (60 sec.)
Infrared (15 sec.)
215°C
220°C
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) Human body model, 100pF discharged through a 1.5kΩ resistor.
(4) For elevated temperature operation, TJ max is:
LM134
LM234
LM334
150°C
125°C
100°C
See Thermal Characteristics.
Thermal Characteristics
over operating free-air temperature range (unless otherwise noted)
Thermal Resistance
TO-92
180°C/W (0.4″ leads)
160°C/W (0.125″ leads)
N/A
TO
SOIC-8
θja (Junction to Ambient)
440°C/W
165°C/W
θjc (Junction to Case)
32°C/W
80°C/W
2
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SNVS746E –MARCH 2000–REVISED MAY 2013
Electrical Characteristics(1)
Parameter
LM134/LM234
LM334
Typ
Conditions
Units
Min
Typ
Max
3
Min
Max
6
Set Current Error, V+=2.5V(2)
10μA ≤ ISET ≤ 1mA
1mA < ISET ≤ 5mA
%
%
%
5
8
2μA ≤ ISET < 10μA
100μA ≤ ISET ≤ 1mA
1mA ≤ ISET ≤ 5mA
2 μA≤ISET≤100 μA
2μA ≤ ISET ≤ 100μA
100μA < ISET ≤ 1mA
1mA < ISET ≤ 5mA
8
12
26
Ratio of Set Current to Bias
Current
14
18
14
23
14
18
14
18
23
18
26
Minimum Operating Voltage
0.8
0.9
1.0
0.02
0.01
0.03
0.02
T
0.8
0.9
1.0
0.02
0.01
0.03
0.02
T
V
V
V
Average Change in Set Current 2μA ≤ ISET ≤ 1mA
with Input Voltage
1.5 ≤ V+ ≤ 5V
5V ≤ V+ ≤ 40V
1.5V ≤ V ≤ 5V
5V ≤ V ≤ 40V
0.05
0.03
0.1
%/V
%/V
%/V
%/V
0.05
1mA < ISET ≤ 5mA
Temperature Dependence of
Set Current(3)
25μA ≤ ISET ≤ 1mA
0.96T
1.04T 0.96T
1.04T
Effective Shunt Capacitance
15
15
pF
(1) Unless otherwise specified, tests are performed at Tj = 25°C with pulse testing so that junction temperature does not change during test
(2) Set current is the current flowing into the V+ pin. For the Basic 2-Terminal Current Source circuit shown in Figure 13. ISET is determined
by the following formula: ISET = 67.7 mV/RSET (@ 25°C). Set current error is expressed as a percent deviation from this amount. ISET
increases at 0.336%/°C @ Tj = 25°C (227 μV/°C).
(3) ISET is directly proportional to absolute temperature (°K). ISET at any temperature can be calculated from: ISET = Io (T/To) where Io is ISET
measured at To (°K).
Electrical Characteristics(1)
LM234-3
Typ
LM234-6
Typ
Parameter
Conditions
Units
Min
Max
Min
Max
(2)
Set Current Error, V+=2.5V
100μA ≤ ISET ≤ 1mA
±1
±2
%
TJ = 25°
Equivalent Temperature Error
±3
26
±6
26
°C
Ratio of Set Current to Bias
Current
100μA ≤ ISET ≤ 1mA
100μA ISET ≤ 1mA
14
18
14
18
Minimum Operating Voltage
0.9
0.02
0.01
T
0.9
0.02
0.01
T
V
Average Change in Set Current 100μA ≤ ISET ≤ 1mA
with Input Voltage
1.5 ≤ V+ ≤ 5V
5V ≤ V+ ≤ 30V
0.05
0.03
0.01
0.05
%/V
%/V
Temperature Dependence of
Set Current(3)
100μA ≤ ISET ≤ 1mA
0.98T
1.02T 0.97T
1.03T
Equivalent Slope Error
±2
±3
%
Effective Shunt Capacitance
15
15
pF
(1) Unless otherwise specified, tests are performed at Tj = 25°C with pulse testing so that junction temperature does not change during test
(2) Set current is the current flowing into the V+ pin. For the Basic 2-Terminal Current Source circuit shown in Figure 13. ISET is determined
by the following formula: ISET = 67.7 mV/RSET (@ 25°C). Set current error is expressed as a percent deviation from this amount. ISET
increases at 0.336%/°C @ Tj = 25°C (227 μV/°C).
(3) ISET is directly proportional to absolute temperature (°K). ISET at any temperature can be calculated from: ISET = Io (T/To) where Io is ISET
measured at To (°K).
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Typical Performance Characteristics
Maximum Slew Rate
Linear Operation
Output Impedance
Figure 5.
Start-Up
Figure 6.
Transient Response
Figure 7.
Figure 8.
Voltage Across RSET (VR)
Current Noise
Figure 9.
Figure 10.
4
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Typical Performance Characteristics (continued)
Turn-On Voltage
Ratio of ISET to IBIAS
Figure 11.
Figure 12.
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APPLICATION HINTS
The LM134 has been designed for ease of application, but a general discussion of design features is presented
here to familiarize the designer with device characteristics which may not be immediately obvious. These include
the effects of slewing, power dissipation, capacitance, noise, and contact resistance.
Calculating RSET
The total current through the LM134 (ISET) is the sum of the current going through the SET resistor (IR) and the
LM134's bias current (IBIAS), as shown in Figure 13.
Figure 13. Basic Current Source
A graph showing the ratio of these two currents is supplied under Ratio of ISET to IBIAS in Typical Performance
Characteristics. The current flowing through RSET is determined by VR, which is approximately 214μV/°K (64
mV/298°K ∼ 214μV/°K).
(1)
Since (for a given set current) IBIAS is simply a percentage of ISET, the equation can be rewritten
where
•
n is the ratio of ISET to IBIAS as specified in Electrical Characteristics and shown in the graph
(2)
(3)
Since n is typically 18 for 2μA ≤ ISET ≤ 1mA, the equation can be further simplified to
for most set currents.
Slew Rate
At slew rates above a given threshold (see curve), the LM134 may exhibit non-linear current shifts. The slewing
rate at which this occurs is directly proportional to ISET. At ISET = 10μA, maximum dV/dt is 0.01V/μs; at ISET
1mA, the limit is 1V/μs. Slew rates above the limit do not harm the LM134, or cause large currents to flow.
=
Thermal Effects
Internal heating can have a significant effect on current regulation for ISET greater than 100μA. For example, each
1V increase across the LM134 at ISET = 1 mA will increase junction temperature by ≈0.4°C in still air. Output
current (ISET) has a temperature coefficient of ≈0.33%/°C, so the change in current due to temperature rise will be
(0.4) (0.33) = 0.132%. This is a 10:1 degradation in regulation compared to true electrical effects. Thermal
effects, therefore, must be taken into account when DC regulation is critical and ISET exceeds 100μA. Heat
sinking of the TO package or the TO-92 leads can reduce this effect by more than 3:1.
6
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Shunt Capacitance
In certain applications, the 15 pF shunt capacitance of the LM134 may have to be reduced, either because of
loading problems or because it limits the AC output impedance of the current source. This can be easily
accomplished by buffering the LM134 with an FET as shown in the applications. This can reduce capacitance to
less than 3 pF and improve regulation by at least an order of magnitude. DC characteristics (with the exception
of minimum input voltage), are not affected.
Noise
Current noise generated by the LM134 is approximately 4 times the shot noise of a transistor. If the LM134 is
used as an active load for a transistor amplifier, input referred noise will be increased by about 12dB. In many
cases, this is acceptable and a single stage amplifier can be built with a voltage gain exceeding 2000.
Lead Resistance
The sense voltage which determines operating current of the LM134 is less than 100mV. At this level,
thermocouple or lead resistance effects should be minimized by locating the current setting resistor physically
close to the device. Sockets should be avoided if possible. It takes only 0.7Ω contact resistance to reduce output
current by 1% at the 1 mA level.
Sensing Temperature
The LM134 makes an ideal remote temperature sensor because its current mode operation does not lose
accuracy over long wire runs. Output current is directly proportional to absolute temperature in degrees Kelvin,
according to the following formula:
(4)
Calibration of the LM134 is greatly simplified because of the fact that most of the initial inaccuracy is due to a
gain term (slope error) and not an offset. This means that a calibration consisting of a gain adjustment only will
trim both slope and zero at the same time. In addition, gain adjustment is a one point trim because the output of
the LM134 extrapolates to zero at 0°K, independent of RSET or any initial inaccuracy.
Figure 14. Gain Adjustment
This property of the LM134 is illustrated in the accompanying graph. Line abc is the sensor current before
trimming. Line a′b′c′ is the desired output. A gain trim done at T2 will move the output from b to b′ and will
simultaneously correct the slope so that the output at T1 and T3 will be correct. This gain trim can be done on
RSET or on the load resistor used to terminate the LM134. Slope error after trim will normally be less than ±1%.
To maintain this accuracy, however, a low temperature coefficient resistor must be used for RSET
.
A 33 ppm/°C drift of RSET will give a 1% slope error because the resistor will normally see about the same
temperature variations as the LM134. Separating RSET from the LM134 requires 3 wires and has lead resistance
problems, so is not normally recommended. Metal film resistors with less than 20 ppm/°C drift are readily
available. Wire wound resistors may also be used where best stability is required.
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Application as a Zero Temperature Coefficent Current Source
Adding a diode and a resistor to the standard LM134 configuration can cancel the temperature-dependent
characteristic of the LM134. The circuit shown in Figure 15 balances the positive tempco of the LM134 (about
+0.23 mV/°C) with the negative tempco of a forward-biased silicon diode (about −2.5 mV/°C).
Figure 15. Zero Tempco Current Source
The set current (ISET) is the sum of I1 and I2, each contributing approximately 50% of the set current, and IBIAS
.
IBIAS is usually included in the I1 term by increasing the VR value used for calculations by 5.9%. (See
CALCULATING RSET.)
(5)
The first step is to minimize the tempco of the circuit, using the following equations. An example is given using a
value of +227μV/°C as the tempco of the LM134 (which includes the IBIAS component), and −2.5 mV/°C as the
tempco of the diode (for best results, this value should be directly measured or obtained from the manufacturer
of the diode).
(6)
(7)
With the R1 to R2 ratio determined, values for R1 and R2 should be determined to give the desired set current.
The formula for calculating the set current at T = 25°C is shown below, followed by an example that assumes the
forward voltage drop across the diode (VD) is 0.6V, the voltage across R1 is 67.7mV (64 mV + 5.9% to account
for IBIAS), and R2/R1 = 10 (from the previous calculations).
8
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(8)
This circuit will eliminate most of the LM134's temperature coefficient, and it does a good job even if the
estimates of the diode's characteristics are not accurate (as the following example will show). For lowest tempco
with a specific diode at the desired ISET, however, the circuit should be built and tested over temperature. If the
measured tempco of ISET is positive, R2 should be reduced. If the resulting tempco is negative, R2 should be
increased. The recommended diode for use in this circuit is the 1N457 because its tempco is centered at 11
times the tempco of the LM134, allowing R2 = 10 R1. You can also use this circuit to create a current source with
non-zero tempcos by setting the tempco component of the tempco equation to the desired value instead of 0.
EXAMPLE: A 1mA, Zero-Tempco Current Source
First, solve for R1 and R2:
(9)
The values of R1 and R2 can be changed to standard 1% resistor values (R1 = 133Ω and R2 = 1.33kΩ) with less
than a 0.75% error.
If the forward voltage drop of the diode was 0.65V instead of the estimate of 0.6V (an error of 8%), the actual set
current will be
(10)
an error of less than 5%.
If the estimate for the tempco of the diode's forward voltage drop was off, the tempco cancellation is still
reasonably effective. Assume the tempco of the diode is 2.6mV/°C instead of 2.5mV/°C (an error of 4%). The
tempco of the circuit is now:
(11)
A 1mA LM134 current source with no temperature compensation would have a set resistor of 68Ω and a
resulting tempco of
(12)
So even if the diode's tempco varies as much as ±4% from its estimated value, the circuit still eliminates 98% of
the LM134's inherent tempco.
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Typical Applications
*Select R3 = VREF/583μA. VREF may be any stable positive voltage ≥ 2V
Trim R3 to calibrate
Figure 16. Ground Referred Fahrenheit Thermometer
Figure 17. Terminating Remote Sensor for Voltage Output
*Output impedance of the LM134 at the “R” pin is approximately
where R2 is the equivalent external resistance connected from the V− pin to ground. This negative resistance can be
reduced by a factor of 5 or more by inserting an equivalent resistor R3 = (R2/16) in series with the output.
Figure 18. Low Output Impedance Thermometer
10
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Figure 19. Low Output Impedance Thermometer
*Select R1 and C1 for optimum stability
Figure 20. Higher Output Current
Figure 21. Basic 2-Terminal Current Source
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Figure 22. Micropower Bias
Figure 23. Low Input Voltage Reference Driver
Figure 24. Ramp Generator
12
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*Select ratio of R1 to R2 to obtain zero temperature drift
Figure 25. 1.2V Reference Operates on 10 μA and 2V
*Select ratio of R1 to R2 for zero temperature drift
Figure 26. 1.2V Regulator with 1.8V Minimum Input
Figure 27. Zener Biasing
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*For ±10% adjustment, select RSET10% high, and make R1 ≈ 3 RSET
Figure 28. Alternate Trimming Technique
Figure 29. Buffer for Photoconductive Cell
*Select Q1 or Q2 to ensure at least 1V across the LM134. Vp (1 − ISET/IDSS) ≥ 1.2V.
14
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Figure 30. FET Cascoding for Low Capacitance and/or Ultra High Output Impedance
*ZOUT ≈ −16 • R1 (R1/VIN must not exceed ISET
)
Figure 31. Generating Negative Output Impedance
*Use minimum value required to ensure stability of protected device. This minimizes inrush current to a direct short.
Figure 32. In-Line Current Limiter
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Schematic Diagram
16
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REVISION HISTORY
Changes from Revision C (April 2013) to Revision D
Page
•
Changed layout of National Data Sheet to TI format .......................................................................................................... 16
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PACKAGE OPTION ADDENDUM
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2-Nov-2013
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(6)
(3)
(4/5)
LM134H
ACTIVE
TO
TO
NDV
3
3
1000
TBD
Call TI
Call TI
-55 to 125
-55 to 125
LM134H
LM134H/NOPB
ACTIVE
ACTIVE
ACTIVE
NRND
NDV
LP
LP
D
1000
1800
1800
95
Green (RoHS
& no Sb/Br)
POST-PLATE
Level-1-NA-UNLIM
LM134H
LM234Z-3/NOPB
LM234Z-6/NOPB
LM334M
TO-92
TO-92
SOIC
SOIC
SOIC
SOIC
SOIC
SOIC
SOIC
SOIC
TO-92
TO-92
3
3
8
8
8
8
8
8
8
8
3
3
Green (RoHS
& no Sb/Br)
SN | CU SN
SN | CU SN
Call TI
N / A for Pkg Type
N / A for Pkg Type
Call TI
-25 to 100
-25 to 100
0 to 70
0 to 70
0 to 70
0 to 70
0 to 70
0 to 70
0 to 70
0 to 70
LM234
Z-3
Green (RoHS
& no Sb/Br)
LM234
Z-6
TBD
LM334
M
LM334M/NOPB
LM334MX
ACTIVE
NRND
D
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
Call TI
LM334
M
D
2500
2500
95
TBD
Call TI
LM334
M
LM334MX/NOPB
LM334SM
ACTIVE
NRND
D
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
Call TI
LM334
M
D
TBD
Call TI
LM334
SM
LM334SM/NOPB
LM334SMX
ACTIVE
NRND
D
95
Green (RoHS
& no Sb/Br)
SN | CU SN
Call TI
Level-1-260C-UNLIM
Call TI
LM334
SM
D
2500
2500
2000
1800
TBD
LM334
SM
LM334SMX/NOPB
LM334Z/LFT1
LM334Z/NOPB
ACTIVE
ACTIVE
ACTIVE
D
Green (RoHS
& no Sb/Br)
SN | CU SN
SN | CU SN
SN | CU SN
Level-1-260C-UNLIM
N / A for Pkg Type
N / A for Pkg Type
LM334
SM
LP
LP
Green (RoHS
& no Sb/Br)
LM334
Z
Green (RoHS
& no Sb/Br)
0 to 70
LM334
Z
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
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2-Nov-2013
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
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provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
29-May-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM334MX
LM334MX/NOPB
LM334SMX
SOIC
SOIC
SOIC
SOIC
D
D
D
D
8
8
8
8
2500
2500
2500
2500
330.0
330.0
330.0
330.0
12.4
12.4
12.4
12.4
6.5
6.5
6.5
6.5
5.4
5.4
5.4
5.4
2.0
2.0
2.0
2.0
8.0
8.0
8.0
8.0
12.0
12.0
12.0
12.0
Q1
Q1
Q1
Q1
LM334SMX/NOPB
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
29-May-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LM334MX
LM334MX/NOPB
LM334SMX
SOIC
SOIC
SOIC
SOIC
D
D
D
D
8
8
8
8
2500
2500
2500
2500
367.0
367.0
367.0
367.0
367.0
367.0
367.0
367.0
35.0
35.0
35.0
35.0
LM334SMX/NOPB
Pack Materials-Page 2
MECHANICAL DATA
NDV0003H
H03H (Rev F)
www.ti.com
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