LM3405AXMKE/NOPB [TI]

1.6MHz, 1A Constant Current Buck LED Driver with Internal Compensation in Tiny SOT and MSOP PowerPAD Packages;
LM3405AXMKE/NOPB
型号: LM3405AXMKE/NOPB
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

1.6MHz, 1A Constant Current Buck LED Driver with Internal Compensation in Tiny SOT and MSOP PowerPAD Packages

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LM3405A  
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SNVS508C OCTOBER 2007REVISED MAY 2013  
LM3405A 1.6MHz, 1A Constant Current Buck LED Driver with Internal Compensation in  
Tiny SOT and VSSOP PowerPAD Packages  
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1
FEATURES  
DESCRIPTION  
The LM3405A is a 1A constant current buck LED  
driver designed to provide a simple, high efficiency  
solution for driving high power LEDs. With a 0.205V  
reference voltage feedback control to minimize power  
dissipation, an external resistor sets the current as  
needed for driving various types of LEDs. Switching  
frequency is internally set to 1.6MHz, allowing small  
surface mount inductors and capacitors to be used.  
The LM3405A utilizes current-mode control and  
internal compensation offering ease of use and  
predictable, high performance regulation over a wide  
range of operating conditions. With a maximum input  
voltage of 22V, it can drive up to 5 High-Brightness  
LEDs in series at 1A forward current, with the single  
LED forward voltage of approximately 3.7V.  
Additional features include user accessible EN/DIM  
pin for enabling and PWM dimming of LEDs, thermal  
shutdown, cycle-by-cycle current limit and over-  
current protection.  
2
VIN Operating Range of 3V to 22V  
Drives up to 5 High-Brightness LEDs in Series  
at 1A  
Thin SOT-6 package and VSSOP-8 PowerPAD  
Packages  
1.6MHz Switching Frequency  
EN/DIM Input for Enabling and PWM Dimming  
of LEDs  
300mNMOS Switch  
40nA Shutdown Current at VIN = 5V  
Internally Compensated Current-mode Control  
Cycle-by-cycle Current Limit  
Input Voltage UVLO  
Over-current Protection  
Thermal Shutdown  
APPLICATIONS  
LED Driver  
Constant Current Source  
Industrial Lighting  
LED Flashlights  
LED Lightbulbs  
TYPICAL APPLICATION CIRCUIT  
Efficiency vs LED Current (VIN = 12V)  
D3  
D2  
BOOST  
SW  
V
V
IN  
IN  
C3  
D1  
C1  
L1  
V
OUT  
LM3405A  
ON  
I
F
C2  
C4  
EN/DIM  
OFF  
FB  
GND  
R1  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2007–2013, Texas Instruments Incorporated  
LM3405A  
SNVS508C OCTOBER 2007REVISED MAY 2013  
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
CONNECTION DIAGRAMS  
FB  
GND  
1
2
3
4
8
7
6
5
EN/DIM  
GND  
VIN  
BOOST  
1
2
3
6
5
4
SW  
GND  
FB  
V
IN  
NC  
EN/DIM  
SW  
BOOST  
Figure 1. 6-Lead SOT Package  
See Package Number DDC0006A  
Figure 2. 8-Lead VSSOP PowerPAD Package  
See Package Number DGN0008A  
SOT-6 Pin Descriptions  
Pin No.  
Name  
Application Information  
Boost voltage that drives the NMOS output switch. A bootstrap capacitor is connected between the BOOST and  
SW pins.  
1
BOOST  
2
3
GND  
FB  
Signal and power ground pin. Place the bottom resistor of the feedback network as close as possible to this pin.  
Feedback pin. Connect FB to external resistor divider to set output voltage.  
Enable control input. Logic high enables operation. Toggling this pin with a periodic logic square wave of varying  
4
EN/DIM duty cycle at different frequencies controls the brightness of LEDs. Do not allow this pin to float or be greater than  
VIN + 0.3V.  
5
6
VIN  
SW  
Input supply voltage. Connect a bypass capacitor locally from this pin to GND.  
Switch pin. Connect this pin to the inductor, catch diode, and bootstrap capacitor.  
VSSOP-8 PowerPAD Pin Descriptions  
Pin No.  
1
Name  
Function  
FB  
Feedback pin. Connect FB to external resistor divider to set output voltage.  
2, 7  
GND  
Signal and power ground pin. Place the bottom resistor of the feedback network as close as possible to this pin. Tie  
pins 2, 7 and DAP to one GND plane.  
3
4
NC  
No Connection  
BOOST Boost voltage that drives the NMOS output switch. A bootstrap capacitor is connected between the BOOST and SW  
pins.  
5
6
8
SW  
VIN  
Switch pin. Connect this pin to the inductor, catch diode, and bootstrap capacitor.  
Input supply voltage. Connect a bypass capacitor locally from this pin to GND.  
EN/DIM Enable control input. Logic high enables operation. Toggling this pin with a periodic logic square wave of varying  
duty cycle at different frequencies controls the brightness of LEDs. Do not allow this pin to float or be greater than  
VIN + 0.3V.  
DAP  
Attach to power ground pin  
2
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(1)  
ABSOLUTE MAXIMUM RATINGS  
If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/Distributors for availability  
and specifications.  
VALUE / UNIT  
VIN  
-0.5V to 24V  
-0.5V to 24V  
-0.5V to 30V  
-0.5V to 6.0V  
-0.5V to 3.0V  
-0.5V to (VIN + 0.3V)  
150°C  
SW Voltage  
Boost Voltage  
Boost to SW Voltage  
FB Voltage  
EN/DIM Voltage  
Junction Temperature  
(2)  
ESD Susceptibility  
2kV  
Storage Temperature  
-65°C to +150°C  
220°C  
Soldering Information Infrared/Convection Reflow (15sec)  
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings define the conditions under  
which the device is intended to be functional. For specifications and test conditions, see the Electrical Characteristics.  
(2) Human body model, 1.5kin series with 100pF.  
(1)  
RECOMMENDED OPERATING CONDITIONS  
VALUE / UNIT  
VIN  
3V to 22V  
-0.5V to (VIN + 0.3V)  
2.5V to 5.5V  
-40°C to +125°C  
SOT 118°C/W  
eMSOP8 73°C/W  
400mA  
EN/DIM voltage  
Boost to SW Voltage  
Junction Temperature Range  
(2)  
Thermal Resistance θJA  
(3)  
Thermal Resistance θJA  
ILED SOT package  
ILED VSSOP PowerPAD package  
1A  
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings define the conditions under  
which the device is intended to be functional. For specifications and test conditions, see the Electrical Characteristics.  
(2) Thermal shutdown will occur if the junction temperature (TJ) exceeds 165°C. The maximum allowable power dissipation (PD) at any  
ambient temperature (TA) is PD = (TJ(MAX) – TA)/θJA . This number applies to packages soldered directly onto a 3" x 3" PC board with  
2oz. copper on 4 layers in still air. For a 2 layer board using 1 oz. copper in still air, θJA = 204°C/W.  
(3) Thermal shutdown will occur if the junction temperature (TJ) exceeds 165°C. The maximum allowable power dissipation (PD) at any  
ambient temperature (TA) is PD = (TJ(MAX) – TA)/θJA . This number applies to packages soldered directly onto a 1" x 0.75" PC board with  
1oz. copper on 4 layers in still air.  
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ELECTRICAL CHARACTERISTICS  
Unless otherwise specified, VIN = 12V. Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the  
junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits are specified through test, design, or  
statistical correlation. Typical values represent the most likely parametric norm, and are provided for reference purposes only.  
Parameter  
Test Conditions  
Min  
Typ  
0.205  
0.01  
10  
Max  
Units  
V
VFB  
ΔVFB/(ΔVINxVFB  
IFB  
Feedback Voltage  
0.188  
0.220  
)
Feedback Voltage Line Regulation VIN = 3V to 22V  
%/V  
nA  
V
Feedback Input Bias Current  
Under-voltage Lockout  
Under-voltage Lockout  
UVLO Hysteresis  
Sink/Source  
VIN Rising  
VIN Falling  
250  
2.74  
2.3  
2.95  
UVLO  
1.9  
V
0.44  
1.6  
V
fSW  
Switching Frequency  
Maximum Duty Cycle  
1.2  
85  
1.9  
MHz  
%
DMAX  
VFB = 0V  
94  
SOT (VBOOST - VSW = 3V)  
MSOP (VBOOST - VSW = 3V)  
VBOOST - VSW = 3V, VIN = 3V  
Switching, VFB = 0.195V  
VEN/DIM = 0V  
300  
360  
2.0  
600  
700  
2.8  
2.8  
RDS(ON)  
ICL  
Switch ON Resistance  
mΩ  
Switch Current Limit  
1.2  
1.8  
A
mA  
µA  
V
Quiescent Current  
1.8  
IQ  
Quiescent Current (Shutdown)  
Enable Threshold Voltage  
Shutdown Threshold Voltage  
EN/DIM Pin Current  
0.3  
VEN/DIM Rising  
VEN/DIM_TH  
VEN/DIM Falling  
0.4  
V
IEN/DIM  
ISW  
Sink/Source  
0.01  
0.1  
µA  
µA  
Switch Leakage  
VIN = 22V  
4
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TYPICAL PERFORMANCE CHARACTERISTICS  
Unless otherwise specified, VIN = 12V, VBOOST - VSW = 5V and TA = 25°C.  
Efficiency vs LED Current (VIN=5V)  
Efficiency vs Input Voltage (IF = 1A)  
Figure 3.  
Efficiency vs Input Voltage (IF = 0.7A)  
Figure 4.  
Efficiency vs Input Voltage (IF = 0.35A)  
Figure 5.  
Figure 6.  
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
Unless otherwise specified, VIN = 12V, VBOOST - VSW = 5V and TA = 25°C.  
VFB vs Temperature  
Oscillator Frequency vs Temperature  
Figure 7.  
Figure 8.  
Current Limit vs Temperature  
SOT RDS(ON) vs Temperature (VBOOST - VSW = 3V)  
Figure 9.  
Figure 10.  
Quiescent Current vs Temperature  
Startup Response to EN/DIM Signal (VIN = 15V, IF = 0.2A)  
Figure 11.  
Figure 12.  
6
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BLOCK DIAGRAM  
Figure 13. Simplified Block Diagram  
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APPLICATION INFORMATION  
THEORY OF OPERATION  
The LM3405A is a PWM, current-mode controled buck switching regulator designed to provide a simple, high  
efficiency solution for driving LEDs with a preset switching frequency of 1.6MHz. This high frequency allows the  
LM3405A to operate with small surface mount capacitors and inductors, resulting in LED drivers that need only a  
minimum amount of board space. The LM3405A is internally compensated, simple to use, and requires few  
external components.  
The following description of operation of the LM3405A will refer to the Simplified Block Diagram (Figure 13) and  
to the waveforms in Figure 14. The LM3405A supplies a regulated output current by switching the internal NMOS  
power switch at constant frequency and variable duty cycle. A switching cycle begins at the falling edge of the  
reset pulse generated by the internal oscillator. When this pulse goes low, the output control logic turns on the  
internal NMOS power switch. During this on-time, the SW pin voltage (VSW) swings up to approximately VIN, and  
the inductor current (IL) increases with a linear slope. IL is measured by the current sense amplifier, which  
generates an output proportional to the switch current. The sense signal is summed with the regulator’s  
corrective ramp and compared to the error amplifier’s output, which is proportional to the difference between the  
feedback voltage and VREF. When the PWM comparator output goes high, the internal power switch turns off until  
the next switching cycle begins. During the switch off-time, inductor current discharges through the catch diode  
D1, which forces the SW pin to swing below ground by the forward voltage (VD1) of the catch diode. The  
regulator loop adjusts the duty cycle (D) to maintain a constant output current (IF) through the LED, by forcing FB  
pin voltage to be equal to VREF (0.205V).  
V
SW  
D = T /T  
ON SW  
V
IN  
SW  
Voltage  
T
OFF  
T
ON  
0
D1  
t
-V  
T
SW  
I
L
I
LPK  
I
F
Di  
L
Inductor  
Current  
0
t
Figure 14. SW Pin Voltage and Inductor Current Waveforms of LM3405A  
8
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BOOST FUNCTION  
Capacitor C3 and diode D2 in Figure 13 are used to generate a voltage VBOOST. The voltage across C3, VBOOST  
-
VSW, is the gate drive voltage to the internal NMOS power switch. To properly drive the internal NMOS switch  
during its on-time, VBOOST needs to be at least 2.5V greater than VSW. A large value of VBOOST - VSW is  
recommended to achieve better efficiency by minimizing both the internal switch ON resistance (RDS(ON)), and the  
switch rise and fall times. However, VBOOST - VSW should not exceed the maximum operating limit of 5.5V.  
When the LM3405A starts up, internal circuitry from VIN supplies a 20mA current to the BOOST pin, flowing out  
of the BOOST pin into C3. This current charges C3 to a voltage sufficient to turn the switch on. The BOOST pin  
will continue to source current to C3 until the voltage at the feedback pin is greater than 123mV.  
There are various methods to derive VBOOST  
1. From the input voltage (VIN)  
:
2. From the output voltage (VOUT  
3. From a shunt or series zener diode  
4. From an external distributed voltage rail (VEXT  
)
)
The first method is shown in the Simplified Block Diagram of Figure 13. Capacitor C3 is charged via diode D2 by  
VIN. During a normal switching cycle, when the internal NMOS power switch is off (TOFF) (refer to Figure 14),  
VBOOST equals VIN minus the forward voltage of D2 (VD2), during which the current in the inductor (L1) forward  
biases the catch diode D1 (VD1). Therefore the gate drive voltage stored across C3 is:  
VBOOST - VSW = VIN - VD2 + VD1  
(1)  
When the NMOS switch turns on (TON), the switch pin rises to:  
VSW = VIN – (RDS(ON) x IL)  
(2)  
Since the voltage across C3 remains unchanged, VBOOST is forced to rise thus reverse biasing D2. The voltage at  
VBOOST is then:  
VBOOST = 2VIN – (RDS(ON) x IL) – VD2 + VD1  
(3)  
Depending on the quality of the diodes D1 and D2, the gate drive voltage in this method can be slightly less or  
larger than the input voltage VIN. For best performance, ensure that the variation of the input supply does not  
cause the gate drive voltage to fall outside the recommended range:  
2.5V < VIN - VD2 + VD1 < 5.5V  
(4)  
The second method for deriving the boost voltage is to connect D2 to the output as shown in Figure 15. The gate  
drive voltage in this configuration is:  
VBOOST - VSW = VOUT – VD2 + VD1  
(5)  
Since the gate drive voltage needs to be in the range of 2.5V to 5.5V, the output voltage VOUT should be limited  
to a certain range. For the calculation of VOUT, see OUTPUT VOLTAGE section.  
Figure 15. VBOOST Derived from VOUT  
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The third method can be used in the applications where both VIN and VOUT are greater than 5.5V. In these cases,  
C3 cannot be charged directly from these voltages; instead C3 can be charged from VIN or VOUT minus a zener  
voltage (VD3) by placing a zener diode D3 in series with D2 as shown in Figure 16. When using a series zener  
diode from the input, the gate drive voltage is VIN - VD3 - VD2 + VD1  
.
Figure 16. VBOOST Derived from VIN through a Series Zener  
An alternate method is to place the zener diode D3 in a shunt configuration as shown in Figure 17. A small  
350mW to 500mW, 5.1V zener in a SOT or SOD package can be used for this purpose. A small ceramic  
capacitor such as a 6.3V, 0.1µF capacitor (C5) should be placed in parallel with the zener diode. When the  
internal NMOS switch turns on, a pulse of current is drawn to charge the internal NMOS gate capacitance. The  
0.1µF parallel shunt capacitor ensures that the VBOOST voltage is maintained during this time. Resistor R2 should  
be chosen to provide enough RMS current to the zener diode and to the BOOST pin. A recommended choice for  
the zener current (IZENER) is 1mA. The current IBOOST into the BOOST pin supplies the gate current of the NMOS  
power switch. It reaches a maximum of around 3.6mA at the highest gate drive voltage of 5.5V over the  
LM3405A operating range.  
For the worst case IBOOST, increase the current by 50%. In that case, the maximum boost current will be:  
IBOOST-MAX = 1.5 x 3.6mA = 5.4mA  
(6)  
(7)  
(8)  
R2 will then be given by:  
R2 = (VIN - VZENER) / (IBOOST_MAX + IZENER  
)
For example, let VIN = 12V, VZENER = 5V, IZENER = 1mA, then:  
R2 = (12V - 5V) / (5.4mA + 1mA) = 1.09k  
Figure 17. VBOOST derived from VIN through a Shunt Zener  
The fourth method can be used in an application which has an external low voltage rail, VEXT. C3 can be charged  
through D2 from VEXT, independent of VIN and VOUT voltage levels. Again for best performance, ensure that the  
gate drive voltage, VEXT - VD2 + VD1, falls in the range of 2.5V to 5.5V.  
10  
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SETTING THE LED CURRENT  
LM3405A is a constant current buck regulator. The LEDs are connected between VOUT and the FB pin as shown  
in the Typical Application Circuit. The FB pin is at 0.205V in regulation and therefore the LED current IF is set by  
VFB and resistor R1 from FB to ground by the following equation:  
IF = VFB / R1  
(9)  
IF should not exceed the 1A current capability of LM3405A and therefore R1 minimum must be approximately  
0.2. IF should also be kept above 200mA for stable operation, and therefore R1 maximum must be  
approximately 1. If average LED currents less than 200mA are desired, the EN/DIM pin can be used for PWM  
dimming. See LED PWM DIMMING section.  
OUTPUT VOLTAGE  
The output voltage is primarily determined by the number of LEDs (n) connected from VOUT to FB pin and  
therefore VOUT can be written as :  
VOUT = ((n x VF) + VFB  
)
(10)  
where VF is the forward voltage of one LED at the set LED current level (see LED manufacturer datasheet for  
forward characteristics curve).  
ENABLE MODE / SHUTDOWN MODE  
The LM3405A has both enable and shutdown modes that are controlled by the EN/DIM pin. Connecting a  
voltage source greater than 1.8V to the EN/DIM pin enables the operation of LM3405A, while reducing this  
voltage below 0.4V places the part in a low quiescent current (0.3µA typical) shutdown mode. There is no  
internal pull-up on EN/DIM pin, therefore an external signal is required to initiate switching. Do not allow this pin  
to float or rise to 0.3V above VIN. It should be noted that when the EN/DIM pin voltage rises above 1.8V while the  
input voltage is greater than UVLO, there is a finite delay before switching starts. During this delay the LM3405A  
will go through a power on reset state after which the internal soft-start process commences. The soft-start  
process limits the inrush current and brings up the LED current (IF) in a smooth and controlled fashion. The total  
combined duration of the power on reset delay, soft-start delay and the delay to fully establish the LED current is  
in the order of 100µs (refer to Figure 22).  
The simplest way to enable the operation of LM3405A is to connect the EN/DIM pin to VIN which allows self start-  
up of LM3405A whenever the input voltage is applied. However, when an input voltage of slow rise time is used  
to power the application and if both the input voltage and the output voltage are not fully established before the  
soft-start time elapses, the control circuit will command maximum duty cycle operation of the internal power  
switch to bring up the output voltage rapidly. When the feedback pin voltage exceeds 0.205V, the duty cycle will  
have to reduce from the maximum value accordingly, to maintain regulation. It takes a finite amount of time for  
this reduction of duty cycle and this will result in a spike in LED current for a short duration as shown in  
Figure 18. In applications where this LED current overshoot is undesirable, EN/DIM pin voltage can be  
separately applied and delayed such that VIN is fully established before the EN/DIM pin voltage reaches the  
enable threshold. The effect of delaying EN/DIM with respect to VIN on the LED current is shown in Figure 19.  
For a fast rising input voltage (200µs for example), there is no need to delay the EN/DIM signal since soft-start  
can smoothly bring up the LED current as shown in Figure 20.  
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Figure 18. Startup Response to VIN with 5ms Rise  
Time  
Figure 19. Startup Response to VIN with EN/DIM  
Delayed  
Figure 20. Startup Response to VIN with 200µs Rise Time  
LED PWM DIMMING  
The LED brightness can be controlled by applying a periodic pulse signal to the EN/DIM pin and varying its  
frequency and/or duty cycle. This so-called PWM dimming method controls the average light output by pulsing  
the LED current between the set value and zero. A logic high level at the EN/DIM pin turns on the LED current  
whereas a logic low level turns off the LED current. Figure 21 shows a typical LED current waveform in PWM  
dimming mode. As explained in the previous section, there is approximately a 100µs delay from the EN/DIM  
signal going high to fully establishing the LED current as shown in Figure 22. This 100µs delay sets a maximum  
frequency limit for the driving signal that can be applied to the EN/DIM pin for PWM dimming. Figure 23 shows  
the average LED current versus duty cycle of PWM dimming signal for various frequencies. The applicable  
frequency range to drive LM3405A for PWM dimming is from 100Hz to 5kHz. The dimming ratio reduces  
drastically when the applied PWM dimming frequency is greater than 5kHz.  
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Figure 21. PWM Dimming of LEDs  
Using the EN/DIM Pin  
Figure 22. Startup Response to EN/DIM  
with IF = 1A  
Figure 23. Average LED Current  
vs  
Duty Cycle of PWM Dimming Signal at EN/DIM Pin  
UNDER-VOLTAGE LOCKOUT  
Under-voltage lockout (UVLO) prevents the LM3405A from operating until the input voltage exceeds 2.74V  
(typical). The UVLO threshold has approximately 440mV of hysteresis, so the part will operate until VIN drops  
below 2.3V (typical). Hysteresis prevents the part from turning off during power up if VIN is non-monotonic.  
CURRENT LIMIT  
The LM3405A uses cycle-by-cycle current limit to protect the internal power switch. During each switching cycle,  
a current limit comparator detects if the power switch current exceeds 2.0A (typical), and turns off the switch until  
the next switching cycle begins.  
OVER-CURRENT PROTECTION  
The LM3405A has a built in over-current comparator that compares the FB pin voltage to a threshold voltage that  
is 60% higher than the internal reference VREF. Once the FB pin voltage exceeds this threshold level (typically  
328mV), the internal NMOS power switch is turned off, which allows the feedback voltage to decrease towards  
regulation. This threshold provides an upper limit for the LED current. LED current overshoot is limited to  
328mV/R1 by this comparator during transients.  
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THERMAL SHUTDOWN  
Thermal shutdown limits total power dissipation by turning off the internal power switch when the IC junction  
temperature exceeds 165°C. After thermal shutdown occurs, the power switch does not turn on until the junction  
temperature drops below approximately 150°C.  
DESIGN GUIDE  
INDUCTOR (L1)  
The Duty Cycle (D) can be approximated quickly using the ratio of output voltage (VOUT) to input voltage (VIN):  
VOUT  
D =  
VIN  
(11)  
The catch diode (D1) forward voltage drop and the voltage drop across the internal NMOS must be included to  
calculate a more accurate duty cycle. Calculate D by using the following formula:  
VOUT + VD1  
D =  
VIN + VD1 - VSW  
(12)  
VSW can be approximated by:  
VSW = IF x RDS(ON)  
(13)  
The diode forward drop (VD1) can range from 0.3V to 0.7V depending on the quality of the diode. The lower VD1  
is, the higher the operating efficiency of the converter.  
The inductor value determines the output ripple current (ΔiL, as defined in Figure 14). Lower inductor values  
decrease the size of the inductor, but increases the output ripple current. An increase in the inductor value will  
decrease the output ripple current. The ratio of ripple current to LED current is optimized when it is set between  
0.3 and 0.4 at 1A LED current. This ratio r is defined as:  
DiL  
r =  
lF  
(14)  
One must also ensure that the minimum current limit (1.2A) is not exceeded, so the peak current in the inductor  
must be calculated. The peak current (ILPK) in the inductor is calculated as:  
ILPK = IF + ΔiL/2  
(15)  
When the designed maximum output current is reduced, the ratio r can be increased. At a current of 0.2A, r can  
be made as high as 0.7. The ripple ratio can be increased at lighter loads because the net ripple is actually quite  
low, and if r remains constant the inductor value can be made quite large. An equation empirically developed for  
the maximum ripple ratio at any current below 2A is:  
-0.3667  
r = 0.387 x IOUT  
(16)  
Note that this is just a guideline.  
The LM3405A operates at a high frequency allowing the use of ceramic output capacitors without compromising  
transient response. Ceramic capacitors allow higher inductor ripple without significantly increasing LED current  
ripple. See the output capacitor and feed-forward capacitor sections for more details on LED current ripple.  
Now that the ripple current or ripple ratio is determined, the inductance is calculated by:  
VOUT + VD1  
x (1-D)  
L =  
IF x r x fSW  
(17)  
where fSW is the switching frequency and IF is the LED current. When selecting an inductor, make sure that it is  
capable of supporting the peak output current without saturating. Inductor saturation will result in a sudden  
reduction in inductance and prevent the regulator from operating correctly. Because of the operating frequency of  
the LM3405A, ferrite based inductors are preferred to minimize core losses. This presents little restriction since  
the variety of ferrite based inductors is huge. Lastly, inductors with lower series resistance (DCR) will provide  
better operating efficiency. For recommended inductor selection, refer to Circuit Examples and Recommended  
Inductance Range in Table 1.  
14  
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Table 1. Recommended Inductance Range  
IF  
Inductance Range and Inductor Current Ripple  
6.8µH-15µH  
1.0A  
Inductance  
6.8µH  
51%  
10µH  
36%  
15µH  
24%  
(1)  
ΔiL / IF  
10µH-22µH  
0.6A  
0.2A  
Inductance  
10µH  
58%  
15µH  
39%  
22µH  
26%  
(1)  
ΔiL / IF  
15µH-27µH  
Inductance  
15µH  
116%  
22µH  
79%  
27µH  
65%  
(1)  
ΔiL / IF  
(1) Maximum over full range of VIN and VOUT  
.
INPUT CAPACITOR (C1)  
An input capacitor is necessary to ensure that VIN does not drop excessively during switching transients. The  
primary specifications of the input capacitor are capacitance, voltage rating, RMS current rating, and ESL  
(Equivalent Series Inductance). The input voltage rating is specifically stated by the capacitor manufacturer.  
Make sure to check any recommended deratings and also verify if there is any significant change in capacitance  
at the operating input voltage and the operating temperature. The input capacitor maximum RMS input current  
rating (IRMS-IN) must be greater than:  
r2  
12  
IRMS-IN = IF x  
D x  
1 - D +  
(18)  
It can be shown from the above equation that maximum RMS capacitor current occurs when D = 0.5. Always  
calculate the RMS at the point where the duty cycle D, is closest to 0.5. The ESL of an input capacitor is usually  
determined by the effective cross sectional area of the current path. A large leaded capacitor will have high ESL  
and an 0805 ceramic chip capacitor will have very low ESL. At the operating frequency of the LM3405A, certain  
capacitors may have an ESL so large that the resulting inductive impedance (2πfL) will be higher than that  
required to provide stable operation. It is strongly recommended to use ceramic capacitors due to their low ESR  
and low ESL. A 10µF multilayer ceramic capacitor (MLCC) is a good choice for most applications. In cases  
where large capacitance is required, use surface mount capacitors such as Tantalum capacitors and place at  
least a 1µF ceramic capacitor close to the VIN pin. For MLCCs it is recommended to use X7R or X5R dielectrics.  
Consult capacitor manufacturer datasheet to see how rated capacitance varies over operating conditions.  
OUTPUT CAPACITOR (C2)  
The output capacitor is selected based upon the desired reduction in LED current ripple. A 1µF ceramic capacitor  
results in very low LED current ripple for most applications. Due to the high switching frequency, the 1µF  
capacitor alone (without feed-forward capacitor C4) can filter more than 90% of the inductor current ripple for  
most applications where the sum of LED dynamic resistance and R1 is larger than 1. Since the internal  
compensation is tailored for small output capacitance with very low ESR, it is strongly recommended to use a  
ceramic capacitor with capacitance less than 3.3µF.  
Given the availability and quality of MLCCs and the expected output voltage of designs using the LM3405A,  
there is really no need to review other capacitor technologies. A benefit of ceramic capacitors is their ability to  
bypass high frequency noise. A certain amount of switching edge noise will couple through the parasitic  
capacitances in the inductor to the output. A ceramic capacitor will bypass this noise. In cases where large  
capacitance is required, use Electrolytic or Tantalum capacitors with large ESR, and verify the loop performance  
on the bench. Like the input capacitor, multilayer ceramic capacitors are recommended X7R or X5R. Again,  
verify actual capacitance at the desired operating voltage and temperature.  
Check the RMS current rating of the capacitor. The maximum RMS current rating of the capacitor is:  
r
IRMS-OUT = IF x  
12  
(19)  
One may select a 1206 size ceramic capacitor for C2 since its current rating is typically higher than 1A, more  
than enough for the requirement.  
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FEED-FORWARD CAPACITOR (C4)  
The feed-forward capacitor (designated as C4) connected in parallel with the LED string is required to provide  
multiple benefits to the LED driver design. It greatly improves the large signal transient response and suppresses  
LED current overshoot that may otherwise occur during PWM dimming; it also helps to shape the rise and fall  
times of the LED current pulse during PWM dimming thus reducing EMI emission; it reduces LED current ripple  
by bypassing some of inductor ripple from flowing through the LED. For most applications, a 1µF ceramic  
capacitor is sufficient. In fact, the combination of a 1µF feed-forward ceramic capacitor and a 1µF output ceramic  
capacitor leads to less than 1% current ripple flowing through the LED. Lower and higher C4 values can be used,  
but bench validation is required to ensure the performance meets the application requirement.  
Figure 24 shows a typical LED current waveform during PWM dimming without feed-forward capacitor. At the  
beginning of each PWM cycle, overshoot can be seen in the LED current. Adding a 1µF feed-forward capacitor  
can totally remove the overshoot as shown in Figure 25.  
Figure 24. PWM Dimming without Feed-Forward  
Capacitor  
Figure 25. PWM Dimming with a 1µF Feed-Forward  
Capacitor  
CATCH DIODE (D1)  
The catch diode (D1) conducts during the switch off-time. A Schottky diode is required for its fast switching time  
and low forward voltage drop. The catch diode should be chosen such that its current rating is greater than:  
ID1 = IF x (1-D)  
(20)  
The reverse breakdown rating of the diode must be at least the maximum input voltage plus appropriate margin.  
To improve efficiency, choose a Schottky diode with a low forward voltage drop.  
BOOST DIODE (D2)  
A standard diode such as the 1N4148 type is recommended. For VBOOST circuits derived from voltages less than  
3.3V, a small-signal Schottky diode is recommended for better efficiency. A good choice is the BAT54 small  
signal diode.  
BOOST CAPACITOR (C3)  
A 0.01µF ceramic capacitor with a voltage rating of at least 6.3V is sufficient. The X7R and X5R MLCCs provide  
the best performance.  
POWER LOSS ESTIMATION  
The main power loss in LM3405A includes three basic types of loss in the internal power switch: conduction loss,  
switching loss, and gate charge loss. In addition, there is loss associated with the power required for the internal  
circuitry of IC.  
The conduction loss is calculated as:  
(21)  
16  
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If the inductor ripple current is fairly small (for example, less than 40%) , the conduction loss can be simplified to:  
PCOND = IF2 x RDS(ON) x D  
(22)  
The switching loss occurs during the switch on and off transition periods, where voltage and current overlap  
resulting in power loss. The simplest means to determine this loss is to empirically measure the rise and fall  
times (10% to 90%) of the voltage at the switch pin.  
Switching power loss is calculated as follows:  
PSW = 0.5 x VIN x IF x fSW x ( TRISE + TFALL  
)
(23)  
(24)  
(25)  
The gate charge loss is associated with the gate charge QG required to drive the switch:  
PG = fSW x VIN x QG  
The power loss required for operation of the internal circuitry:  
PQ = IQ x VIN  
IQ is the quiescent operating current, and is typically around 1.8mA for the LM3405A.  
The total power loss in the IC is:  
PINTERNAL = PCOND + PSW + PG + PQ  
(26)  
An example of power losses for a typical application is shown in Table 2:  
Table 2. Power Loss Tabulation  
Conditions  
Power loss  
VIN  
VOUT  
IOUT  
VD1  
12V  
3.9V  
1.0A  
0.45V  
300mΩ  
RDS(ON)  
fSW  
PCOND  
108mW  
1.6MHz  
18ns  
TRISE  
TFALL  
IQ  
PSW  
288mW  
12ns  
1.8mA  
1.4nC  
PQ  
PG  
22mW  
27mW  
QG  
D is calculated to be 0.36  
Σ ( PCOND + PSW + PQ + PG ) = PINTERNAL  
(27)  
(28)  
PINTERNAL = 445mW  
PCB Layout Considerations  
When planning the layout there are a few things to consider when trying to achieve a clean, regulated output.  
The most important consideration when completing the layout is the close coupling of the GND connections of  
the input capacitor C1 and the catch diode D1. These ground ends should be close to one another and be  
connected to the GND plane with at least two through-holes. Place these components as close to the IC as  
possible. The next consideration is the location of the GND connection of the output capacitor C2, which should  
be near the GND connections of C1 and D1.  
There should be a continuous ground plane on the bottom layer of a two-layer board except under the switching  
node island.  
The FB pin is a high impedance node and care should be taken to make the FB trace short to avoid noise pickup  
that causes inaccurate regulation. The LED current setting resistor R1 should be placed as close as possible to  
the IC, with the GND of R1 placed as close as possible to the GND of the IC. The VOUT trace to LED anode  
should be routed away from the inductor and any other traces that are switching.  
High AC currents flow through the VIN, SW and VOUT traces, so they should be as short and wide as possible.  
Radiated noise can be decreased by choosing a shielded inductor.  
The remaining components should also be placed as close as possible to the IC. See Application Report AN-  
1229 (SNVA054) for further considerations and the LM3405A demo board as an example of a four-layer layout.  
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LM3405A Circuit Examples  
D2  
BOOST  
SW  
V
V
IN  
IN  
C3  
D1  
C1  
L1  
V
OUT  
LM3405A  
C2  
I
F
LED1  
C4  
DC or  
PWM  
EN/DIM  
FB  
GND  
R1  
Figure 26. VBOOST derived from VIN  
(VIN = 5V, IF = 1A)  
Table 3. Bill of Materials for Figure 26  
Part ID  
Part Value  
Part Number  
Manufacturer  
U1  
1A LED Driver  
LM3405A  
Texas Instruments  
Semiconductor  
C1, Input Cap  
C2, Output Cap  
C3, Boost Cap  
C4, Feedforward Cap  
D1, Catch Diode  
D2, Boost Diode  
L1  
10µF, 6.3V, X5R  
C3216X5R0J106M  
GRM319R71A105KC01D  
0805YC103KAT2A  
GRM319R71A105KC01D  
MBRM110LT1G  
TDK  
1µF, 10V, X7R  
Murata  
0.01µF, 16V, X7R  
1µF, 10V, X7R  
AVX  
Murata  
Schottky, 0.37V at 1A, VR = 10V  
Schottky, 0.36V at 15mA  
4.7µH, 1.6A  
ON Semiconductor  
CMDSH-3  
Central Semiconductor  
SLF6028T-4R7M1R6  
WSL2010R2000FEA  
LXK2-PW14  
TDK  
R1  
0.2, 0.5W, 1%  
Vishay  
Lumileds  
LED1  
1.5A, White LED  
18  
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D2  
V
BOOST  
SW  
V
IN  
IN  
C3  
D1  
C1  
L1  
V
OUT  
LM3405A  
C2  
I
C4  
LED1  
F
DC or  
PWM  
EN/DIM  
FB  
GND  
R1  
Figure 27. VBOOST derived from VOUT  
(VIN = 12V, IF = 1A)  
Table 4. Bill of Materials for Figure 27  
Part ID  
Part Value  
Part Number  
Manufacturer  
U1  
1A LED Driver  
LM3405A  
Texas Instruments  
Panasonic  
Murata  
C1, Input Cap  
C2, Output Cap  
C3, Boost Cap  
C4, Feedforward Cap  
D1, Catch Diode  
D2, Boost Diode  
L1  
10µF, 25V, X5R  
ECJ-3YB1E106K  
GRM319R71A105KC01D  
0805YC103KAT2A  
GRM319R71A105KC01D  
SS13  
1µF, 10V, X7R  
0.01µF, 16V, X7R  
1µF, 10V, X7R  
AVX  
Murata  
Schottky, 0.5V at 1A, VR = 30V  
Schottky, 0.36V at 15mA  
4.7µH, 1.6A  
Vishay  
CMDSH-3  
Central Semiconductor  
TDK  
SLF6028T-4R7M1R6  
WSL2010R2000FEA  
LXK2-PW14  
R1  
0.2, 0.5W, 1%  
Vishay  
LED1  
1.5A, White LED  
Lumileds  
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C5  
D3  
R2  
D2  
BOOST  
SW  
V
V
IN  
IN  
C3  
D1  
C1  
L1  
V
OUT  
LM3405A  
C2  
I
F
LED1  
C4  
DC or  
PWM  
EN/DIM  
FB  
GND  
R1  
Figure 28. VBOOST derived from VIN through a Shunt Zener Diode (D3) (VIN = 18V, IF = 1A)  
Table 5. Bill of Materials for Figure 28  
Part ID  
Part Value  
1A LED Driver  
Part Number  
Manufacturer  
U1  
LM3405A  
Texas Instruments  
Semiconductor  
Panasonic  
Murata  
C1, Input Cap  
C2, Output Cap  
C3, Boost Cap  
C4, Feedforward Cap  
C5, Shunt Cap  
D1, Catch Diode  
D2, Boost Diode  
D3, Zener Diode  
L1  
10µF, 25V, X5R  
ECJ-3YB1E106K  
GRM319R71A105KC01D  
0805YC103KAT2A  
GRM319R71A105KC01D  
GRM219R71C104KA01D  
SS13  
1µF, 10V, X7R  
0.01µF, 16V, X7R  
1µF, 10V, X7R  
AVX  
Murata  
0.1µF, 16V, X7R  
Schottky, 0.5V at 1A, VR = 30V  
Schottky, 0.36V at 15mA  
4.7V, 350mW, SOT-23  
6.8µH, 1.5A  
Murata  
Vishay  
CMDSH-3  
Central Semiconductor  
Fairchild  
TDK  
BZX84C4V7  
SLF6028T-6R8M1R5  
WSL2010R2000FEA  
CRCW08051K91FKEA  
LXK2-PW14  
R1  
0.2, 0.5W, 1%  
Vishay  
R2  
1.91k, 1%  
Vishay  
LED1  
1.5A, White LED  
Lumileds  
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D3  
D2  
BOOST  
SW  
V
V
IN  
IN  
C3  
D1  
C1  
L1  
V
OUT  
LM3405A  
C2  
I
C4  
LED1  
F
DC or  
PWM  
EN/DIM  
FB  
GND  
R1  
Figure 29. VBOOST derived from VIN through a Series Zener Diode (D3)  
(VIN = 15V, IF = 1A)  
Table 6. Bill of Materials for Figure 29  
Part ID  
Part Value  
1A LED Driver  
Part Number  
Manufacturer  
Texas Instruments  
U1  
LM3405A  
C1, Input Cap  
C2, Output Cap  
C3, Boost Cap  
C4, Feedforward Cap  
D1, Catch Diode  
D2, Boost Diode  
D3, Zener Diode  
L1  
10µF, 25V, X5R  
ECJ-3YB1E106K  
GRM319R71A105KC01D  
0805YC103KAT2A  
GRM319R71A105KC01D  
SS13  
Panasonic  
Murata  
1µF, 10V, X7R  
0.01µF, 16V, X7R  
1µF, 10V, X7R  
AVX  
Murata  
Schottky, 0.5V at 1A, VR = 30V  
Schottky, 0.36V at 15mA  
11V, 350mW, SOT-23  
6.8µH, 1.5A  
Vishay  
CMDSH-3  
Central Semiconductor  
Fairchild  
TDK  
BZX84C11  
SLF6028T-6R8M1R5  
WSL2010R2000FEA  
LXK2-PW14  
R1  
0.2, 0.5W, 1%  
Vishay  
LED1  
1.5A, White LED  
Lumileds  
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D3  
D2  
BOOST  
SW  
V
V
IN  
IN  
C3  
D1  
L1  
C1  
V
OUT  
LM3405A  
C2  
LED1  
LED2  
I
F
C4  
DC or  
PWM  
EN/DIM  
FB  
GND  
R1  
Figure 30. VBOOST derived from VOUT through a Series Zener Diode (D3)  
( VIN = 18V, IF = 1A )  
Table 7. Bill of Materials for Figure 30  
Part ID  
Part Value  
1A LED Driver  
Part Number  
Manufacturer  
Texas Instruments  
U1  
LM3405A  
C1, Input Cap  
C2, Output Cap  
C3, Boost Cap  
C4, Feedforward Cap  
D1, Catch Diode  
D2, Boost Diode  
D3, Zener Diode  
L1  
10µF, 25V, X5R  
ECJ-3YB1E106K  
GRM319R71A105KC01D  
0805YC103KAT2A  
GRM319R71A105KC01D  
SS13  
Panasonic  
Murata  
1µF, 16V, X7R  
0.01µF, 16V, X7R  
1µF, 16V, X7R  
AVX  
Murata  
Schottky, 0.5V at 1A, VR = 30V  
Schottky, 0.36V at 15mA  
3.6V, 350mW, SOT-23  
6.8µH, 1.5A  
Vishay  
CMDSH-3  
Central Semiconductor  
Fairchild  
TDK  
BZX84C3V6  
SLF6028T-6R8M1R5  
WSL2010R2000FEA  
LXK2-PW14  
R1  
0.2, 0.5W, 1%  
Vishay  
LED1  
1.5A, White LED  
Lumileds  
Lumileds  
LED2  
1.5A, White LED  
LXK2-PW14  
22  
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Figure 31. LED MR16 Lamp Application  
( VIN = 12V AC, IF = 0.75A )  
Table 8. Bill of Materials for Figure 31  
Part ID  
Part Value  
1A LED Driver  
Part Number  
Manufacturer  
Texas Instruments  
U1  
LM3405A  
C1, Input Cap  
C2, Output Cap  
C3, Boost Cap  
C5, Input Cap  
D1, Catch Diode  
D2, Boost Diode  
D3, Rectifier Diode  
D4, Rectifier Diode  
D5, Rectifier Diode  
D6, Rectifier Diode  
L1  
10µF, 25V, X5R  
ECJ-3YB1E106K  
GRM319R71A105KC01D  
0805YC103KAT2A  
ECE-A1EN221U  
SS13  
Panasonic  
1µF, 10V, X7R  
Murata  
0.01µF, 16V, X7R  
AVX  
220µF, 25V, electrolytic  
Schottky, 0.5V at 1A, VR = 30V  
Schottky, 0.36V at 15mA  
Schottky, 0.385V at 500mA  
Schottky, 0.385V at 500mA  
Schottky, 0.385V at 500mA  
Schottky, 0.385V at 500mA  
6.8µH, 1.5A  
Panasonic  
Vishay  
CMDSH-3  
Central Semiconductor  
Central Semiconductor  
Central Semiconductor  
Central Semiconductor  
Central Semiconductor  
TDK  
CMHSH5-2L  
CMHSH5-2L  
CMHSH5-2L  
CMHSH5-2L  
SLF6028T-6R8M1R5  
ERJ8BQFR27  
LXHL-PW09  
R1  
0.27, 0.33W, 1%  
Panasonic  
LED1  
1A, White LED  
Lumileds  
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REVISION HISTORY  
Changes from Revision B (May 2013) to Revision C  
Page  
Changed layout of National Data Sheet to TI format .......................................................................................................... 23  
24  
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PACKAGE OPTION ADDENDUM  
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2-May-2013  
PACKAGING INFORMATION  
Orderable Device  
LM3405AXMK/NOPB  
LM3405AXMKE/NOPB  
LM3405AXMKX/NOPB  
LM3405AXMY/NOPB  
LM3405AXMYX/NOPB  
Status Package Type Package Pins Package  
Eco Plan Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
-40 to 125  
Top-Side Markings  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4)  
ACTIVE  
SOT  
SOT  
SOT  
DDC  
6
6
6
8
8
1000  
Green (RoHS  
& no Sb/Br)  
CU SN  
CU SN  
CU SN  
CU SN  
CU SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
SSEB  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
DDC  
DDC  
DGN  
DGN  
250  
Green (RoHS  
& no Sb/Br)  
-40 to 125  
SSEB  
SSEB  
SVSA  
SVSA  
3000  
1000  
3500  
Green (RoHS  
& no Sb/Br)  
-40 to 125  
MSOP-  
PowerPAD  
Green (RoHS  
& no Sb/Br)  
MSOP-  
Green (RoHS  
& no Sb/Br)  
PowerPAD  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4)  
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a  
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
2-May-2013  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
11-Oct-2013  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LM3405AXMK/NOPB  
LM3405AXMKE/NOPB  
LM3405AXMKX/NOPB  
LM3405AXMY/NOPB  
SOT  
SOT  
SOT  
DDC  
DDC  
DDC  
DGN  
6
6
6
8
1000  
250  
178.0  
178.0  
178.0  
178.0  
8.4  
8.4  
3.2  
3.2  
3.2  
5.3  
3.2  
3.2  
3.2  
3.4  
1.4  
1.4  
1.4  
1.4  
4.0  
4.0  
4.0  
8.0  
8.0  
8.0  
Q3  
Q3  
Q3  
Q1  
3000  
1000  
8.4  
8.0  
MSOP-  
Power  
PAD  
12.4  
12.0  
LM3405AXMYX/NOPB  
MSOP-  
Power  
PAD  
DGN  
8
3500  
330.0  
12.4  
5.3  
3.4  
1.4  
8.0  
12.0  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
11-Oct-2013  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LM3405AXMK/NOPB  
LM3405AXMKE/NOPB  
LM3405AXMKX/NOPB  
LM3405AXMY/NOPB  
SOT  
SOT  
DDC  
DDC  
DDC  
DGN  
DGN  
6
6
6
8
8
1000  
250  
210.0  
210.0  
210.0  
210.0  
367.0  
185.0  
185.0  
185.0  
185.0  
367.0  
35.0  
35.0  
35.0  
35.0  
35.0  
SOT  
3000  
1000  
3500  
MSOP-PowerPAD  
LM3405AXMYX/NOPB MSOP-PowerPAD  
Pack Materials-Page 2  
MECHANICAL DATA  
DGN0008A  
MUY08A (Rev A)  
BOTTOM VIEW  
www.ti.com  
IMPORTANT NOTICE  
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other  
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest  
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complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale  
supplied at the time of order acknowledgment.  
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms  
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary  
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily  
performed.  
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and  
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