LM3485EVAL [TI]
LM3485 Hysteretic PFET Buck Controller;
| 型号： | LM3485EVAL |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | LM3485 Hysteretic PFET Buck Controller |
| 文件： | 总23页 (文件大小：996K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM3485
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SNVS178G –JANUARY 2002–REVISED FEBRUARY 2013
Hysteretic PFET Buck Controller
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1
FEATURES
DESCRIPTION
The LM3485 is a high efficiency PFET switching
regulator controller that can be used to quickly and
easily develop a small, low cost, switching buck
regulator for a wide range of applications. The
hysteretic control architecture provides for simple
design without any control loop stability concerns
using a wide variety of external components. The
PFET architecture also allows for low component
count as well as ultra-low dropout, 100% duty cycle
operation. Another benefit is high efficiency operation
at light loads without an increase in output ripple.
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Easy to Use Control Methodology
No Control Loop Compensation Required
4.5V to 35V Wide Input Range
1.242V to VIN Adjustable Output Range
High Efficiency 93%
±1.3% (±2% Over Temp) Internal Reference
100% Duty Cycle
Maximum Operating Frequency > 1MHz
Current Limit Protection
Current limit protection is provided by measuring the
voltage across the PFET’s RDS(ON), thus eliminating
the need for a sense resistor. The cycle-by-cycle
current limit can be adjusted with a single resistor,
ensuring safe operation over a range of output
currents.
VSSOP-8
APPLICATIONS
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Set-Top Box
DSL or Cable Modem
PC/IA
Auto PC
TFT Monitor
Battery Powered Portable Applications
Distributed Power Systems
Always On Power
Typical Application Circuit
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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LM3485
SNVS178G –JANUARY 2002–REVISED FEBRUARY 2013
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Connection Diagram
Figure 1. Top View
8-Lead Plastic VSSOP-8
Package Number DGK (S-PDSO-G8)
PIN DESCRIPTIONS
Pin Name
Pin
No.
Description
ISENSE
GND
NC
1
2
3
4
The current sense input pin. This pin should be connected to Drain node of the external PFET.
Signal ground.
No connection.
FB
The feedback input. Connect the FB to a resistor voltage divider between the output and GND for an adjustable
output voltage.
ADJ
5
Current limit threshold adjustment. It connects to an internal 5.5µA current source. A resistor is connected
between this pin and the input Power Supply. The voltage across this resistor is compared with the VDS of the
external PFET to determine if an over-current condition has occurred.
PWR GND
PGATE
VIN
6
7
8
Power ground.
Gate Drive output for the external PFET. PGATE swings between VIN and VIN-5V.
Power supply input pin.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
(1)
Absolute Maximum Ratings
VIN Voltage
−0.3V to 36V
−0.3V to 36V
−0.3V to 5V
−1.0V to 36V
−0.3V to 36V
150°C
PGATE Voltage
FB Voltage
ISENSE Voltage
ADJ Voltage
Maximum Junction Temperature
Power Dissipation
ESD Susceptibility
Lead Temperature
417mW at TA = 25°C
2kV
Human Body Model(2)
Vapor Phase (60 sec.)
Infrared (15 sec.)
215°C
220°C
Storage Temperature
−65°C to 150°C
(1) Absolute maximum ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the
device is intended to be functional, but device parameter specifications may not be ensured. For specifications and test conditions, see
the Electrical Characteristics.
(2) The human body model is a 100 pF capacitor discharged through a 1.5kΩ resistor into each pin.
(1)
Operating Ratings
Supply Voltage
4.5V to 35V
Operating Junction Temperature
−40°C to +125°C
(1) Absolute maximum ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the
device is intended to be functional, but device parameter specifications may not be ensured. For specifications and test conditions, see
the Electrical Characteristics.
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Electrical Characteristics
Specifications in Standard type face are for TJ = 25°C, and in bold type face apply over the full Operating Temperature
Range (TJ = −40°C to +125°C). Unless otherwise specified, VIN = 12V, VISNS = VIN − 1V, and VADJ = VIN − 1.1V. Datasheet
min/max specification limits are specified by design, test, or statistical analysis.
Symbol
Parameter
Test Conditions
FB = 1.5V
(Not Switching)
Min(1)
Typ(2)
Max(1)
Unit
IQ
Quiescent Current at ground pin
250
400
µA
VFB
Feedback Voltage
1.226
1.217
1.242
1.258
1.267
V
(3)
VHYST
Comparator Hysteresis
10
14
15
20
mV
mV
(4)
VCL
Current limit comparator trip voltage RADJ = 20kΩ
RADJ = 160kΩ
110
880
0
VCL_OFFSET
ICL_ADJ
TCL
Current limit comparator offset
Current limit ADJ current source
Current limit one shot off time
VFB = 1.5V
VFB = 1.5V
−20
3.0
6
+20
7.0
14
mV
µA
µs
5.5
9
VADJ = 11.5V
VISNS = 11.0V
VFB = 1.0V
RPGATE
Driver resistance
Source
ISOURCE = 100mA
5.5
8.5
Ω
Sink
ISink = 100mA
IPGATE
Driver Output current
Source
0.44
A
VIN = 7V,
PGATE = 3.5V
Sink
0.32
VIN = 7V,
PGATE = 3.5V
IFB
FB pin Bias Current(5)
VFB = 1.0V
300
100
750
nA
ns
TONMIN_NOR
Minimum on time in normal
operation
VISNS = VADJ+0.1V
Cload on OUT = 1000pF(6)
TONMIN_CL
Minimum on time in current limit
VISNS = VADJ+0.1V
VFB = 1.0V
175
ns
Cload on OUT = 1000pF(6)
%VFB/ΔVIN
Feedback Voltage Line Regulation 4.5 ≤ VIN ≤ 35V
0.010
%/V
(1) All limits are specified at room temperature (standard type face) and at temperature extremes (bold type face). All room temperature
limits are 100% tested. All limits at temperature extremes are specified via correlation using standard Statistical Quality Control (SQC)
methods. All limits are used to calculate Average Outgoing Quality Level (AOQL).
(2) Typical numbers are at 25°C and represent the most likely norm.
(3) The VFB is the trip voltage at the FB pin when PGATE switches from high to low.
(4) VCL = ICL_ADJ * RADJ
(5) Bias current flows out from the FB pin.
(6) A 1000pF capacitor is connected between VIN and PGATE.
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Typical Performance Characteristics
Unless otherwise specified, TJ = 25°C
Quiescent Current
vs
Input Voltage
(FB = 1.5V)
Feedback Voltage
vs
Temperature
400
350
300
1.255
1.250
Tj = -40èC
VIN=35V
VIN=12V
VIN=4.5V
1.245
250
200
Tj = 125èC
1.240
1.235
Tj = 25èC
150
100
1.230
1.225
28
20
36
4
12
0
40 60
100
120 140
80
-40 -20
20
JUNCTION TEMPERATURE (°C)
INPUT VOLTAGE (V)
Hysteresis Voltage
vs
Hysteresis Voltage
vs
Input Voltage
Temperature
14
12
110
105
TJ = 25èC
10
8
100
95
90
6
4
40
80
100
0
20
60
140
120
-40 -20
4
12
20
28
36
JUNCTION TEMPERATURE (°C)
INPUT VOLTAGE (V)
Current Limit ADJ Current
Current Limit One Shot OFF Time
vs
vs
Temperature
Temperature
12
11
6.5
6.0
VIN=12V
VIN=35V
10
9
5.5
VIN=4.5V
VIN = 4.5V
VIN = 12V
5.0
4.5
8
60
JUNCTION TEMPERATURE (°C)
20
80
140
100 120
0
40
-40
-20
-40 -20
0
20 40 60 80 100 120 140
JUNCTION TEMPERATURE (èC)
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Typical Performance Characteristics (continued)
Unless otherwise specified, TJ = 25°C
PGATE Voltage
Typical VPGATE vs
Time
vs
Input Voltage
VIN = 9V
10
8
6.0
5.5
TJ =125èC
5.0
C
= 1800 pF
TJ = 25èC
PGATE
6
4
4.5
C
= 1020 pF
PGATE
TJ = -40èC
C
= 540 pF
= 110 pF
PGATE
4.0
C
PGATE
2
0
3.5
3.0
0
50
100
150
12
28
36
4
20
INPUT VOLTAGE (V)
T (ns)
Minimum ON Time
vs
Operating ON Time vs
Output Load Current
(VIN = 4.5V)
Temperature
160
140
20
VIN= 4.5V
16
12
8
120
100
80
3.3VOUT
VIN= 12V
60
40
VIN= 24V
4
20
0
1.242VOUT
800
0
-20 -40
0
20 40 60 80 100 120 140
0
200
400
600
1000
JUNCTION TEMPERATURE (°C)
OUTPUT LOAD CURRENT (mA)
Operating ON Time vs
Output Load Current
(VIN = 12V)
Efficiency vs
Load Current
(VOUT = 3.3V, L = 6.8µH)
100
90
5
4
3
2
1
0
VIN = 4.5V
80
70
60
50
40
VIN = 12V
5.0VOUT
3.3VOUT
1.242VOUT
10
100
1000
10000
0
200
400
600
800
1000
LOAD CURRENT (mA)
OUTPUT LOAD CURRENT (mA)
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Typical Performance Characteristics (continued)
Unless otherwise specified, TJ = 25°C
Efficiency vs
Efficiency vs
Load Current
Load Current
(VOUT = 3.3V, L = 22µH)
100
(VOUT = 5.0V, L = 22µH)
100
90
VIN = 4.5V
90
VIN = 12V
VIN = 24V
VIN = 12V
80
80
70
60
50
40
VIN = 24V
70
60
50
40
10
100
1000
10000
10
100
1000
10000
LOAD CURRENT (mA)
LOAD CURRENT (mA)
Continuous Mode Operation
(VIN = 12V, VOUT = 3.3 V, IOUT = 500mA, L = 22µH)
Start Up
1A
VIN (10V/div)
0.5A
Inductor Current
0A
(1A/div)
10V
5V
lind@CADJ = 10nF
lind@CADJ = 1nF
0V
VOUT@CADJ = 1nF
(2V/div)
SW node Voltage
Output Ripple Voltage
20mV
VOUT@CADJ = 10nF
(2V/div)
0mV
-20mV
TIME (100ms/div)
TIME (2ms/div)
Operating Frequency
vs
Discontinuous Mode Operation
(VIN = 12V, VOUT =3.3 V, IOUT = 50mA, L = 22µH)
Input Voltage
(VOUT = 3.3V, IOUT = 1A, COUT(ESR) = 80mΩ, Cff = 100pF)
800
Inductor Current
0.5A
0A
600
L=10mH
SW node
Voltage
10V
L=15mH
5V
0V
400
L=22mH
Output Ripple Voltage
20mV
200
0
0mV
-20mV
TIME (5ms/div)
4
12
20
28
36
INPUT VOLTAGE (V)
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Typical Performance Characteristics (continued)
Unless otherwise specified, TJ = 25°C
Output Ripple Voltage
vs
Operating Frequency vs
Output Load Current
(L = 22µH, COUT(ESR) = 45mΩ, Cff = 100pF)
Input Voltage
(VOUT = 3.3V, IOUT = 1A, COUT(ESR) = 80mΩ, Cff = 100pF)
80
400
L=10mH
12VIN / 3.3VOUT
60
300
200
12VIN / 5.0VOUT
L=15mH
40
L=22mH
12VIN / 1.242VOUT
4.5VIN / 1.242VOUT
100
0
20
0
4.5VIN / 3.3VOUT
0
200
400
600
800
1000
4
12
20
28
36
OUTPUT CURRENT LOAD (mA)
INPUT VOLTAGE (V)
Feed-Forward Capacitor (Cff) Effect
(VOUT = 3.3V, L = 22µH, IOUT = 500mA)
300
250
300
Operating Frequency
250
200
150
100
200
150
100
@Cff=100p
@no Cff
Ripple Voltage
@no Cff
50
0
50
0
@Cff=100p
28
4
12
20
36
INPUT VOLTAGE (V)
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BLOCK DIAGRAM
FUNCTIONAL DESCRIPTION
OVERVIEW
The LM3485 is buck (step-down) DC-DC controller that uses a hysteretic control scheme. The comparator is
designed with approximately 10mV of hysteresis. In response to the voltage at the FB pin, the gate drive
(PGATE pin) turns the external PFET on or off. When the inductor current is too high, the current limit protection
circuit engages and turns the PFET off for approximately 9µs.
Hysteretic control does not require an internal oscillator. Switching frequency depends on the external
components and operating conditions. Operating frequency reduces at light loads resulting in excellent efficiency
compared to other architectures.
2 external resistors can easily program the output voltage. The output can be set in a wide range from 1.242V
(typical) to VIN.
HYSTERETIC CONTROL CIRCUIT
The LM3485 uses a comparator based voltage control loop. The feedback is compared to a 1.242V reference
and a 10mV hysteresis is designed into the comparator to ensure noise free operation.
When the FB input to the comparator falls below the reference voltage, the output of the comparator moves to a
low state. This results in the driver output, PGATE, pulling the gate of the PFET low and turning on the PFET.
With the PFET on, the input supply charges Cout and supplies current to the load via the series path through the
PFET and the inductor. Current through the Inductor ramps up linearly and the output voltage increases. As the
FB voltage reaches the upper threshold, which is the internal reference voltage plus 10mV, the output of the
comparator changes from low to high, and the PGATE responds by turning the PFET off. As the PFET turns off,
the inductor voltage reverses, the catch diode turns on, and the current through the inductor ramps down. Then,
as the output voltage reaches the internal reference voltage again, the next cycle starts.
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The LM3485 operates in discontinuous conduction mode at light load current or continuous conduction mode at
heavy load current. In discontinuous conduction mode, current through the inductor starts at zero and ramps up
to the peak, then ramps down to zero. Next cycle starts when the FB voltage reaches the internal voltage. Until
then, the inductor current remains zero. Operating frequency is lower and switching losses reduce. In continuous
conduction mode, current always flows through the inductor and never ramps down to zero.
The output voltage (VOUT) can be programmed by 2 external resistors. It can be calculated as follows:
VOUT = 1.242* ( R1 + R2 ) / R2
(1)
Figure 2. Hysteretic Window
The minimum output voltage ripple (VOUT_PP) can be calculated in the same way.
VOUT_PP = VHYST ( R1 + R2 ) / R2
(2)
(3)
For example, with VOUT set to 3.3V, VOUT_PP is 26.6mV
VOUT_PP = 0.01* ( 33K + 20K ) / 20K = 0.0266V
Operating frequency (F) is determined by knowing the input voltage, output voltage, inductor, VHYST, ESR
(Equivalent Series Resistance) of output capacitor, and the delay. It can be approximately calculated using the
formula:
(4)
where:
α: ( R1 + R2 ) / R2
delay: It includes the LM3485 propagation delay time and the PFET delay time. The propagation delay is 90ns
typically (see Figure 3).
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140
120
L=22mH
L=10mH
100
80
60
40
20
0
L=4.7mH
15
20
0
10
25
30
5
35
INPUT VOLTAGE - OUTPUT VOLTAGE (V)
Figure 3. Propagation Delay
The operating frequency and output ripple voltage can also be significantly influenced by the speed up capacitor
(Cff). Cff is connected in parallel with the high side feedback resistor, R1. The location of this capacitor is similar
to where a feed forward capacitor would be located in a PWM control scheme. However it's effect on hysteretic
operation is much different. The output ripple causes a current to be sourced or sunk through this capacitor. This
current is essentially a square wave. Since the input to the feedback pin, FB, is a high impedance node, the
current flows through R2. The end result is a reduction in output ripple and an increase in operating frequency.
When adding Cff, calculate the formula above with α = 1. The value of Cff depend on the desired operating
frequency and the value of R2. A good starting point is 470pF ceramic at 100kHz decreasing linearly with
increased operating frequency. Also note that as the output voltage is programmed below 2.5V, the effect of Cff
will decrease significantly.
CURRENT LIMIT OPERATION
The LM3485 has a cycle-by-cycle current limit. Current limit is sensed across the VDS of the PFET or across an
additional sense resistor. When current limit is activated, the LM3485 turns off the external PFET for a period of
9µs(typical). The current limit is adjusted by an external resistor, RADJ
.
The current limit circuit is composed of the ISENSE comparator and the one-shot pulse generator. The positive
input of the ISENSE comparator is the ADJ pin. An internal 5.5µA current sink creates a voltage across the
external RADJ resistor. This voltage is compared to the voltage across the PFET or sense resistor. The ADJ
voltage can be calculated as follows:
VADJ = VIN − (RADJ * 3.0µA)
(5)
Where 3.0µA is the minimum ICL-ADJ value.
The negative input of the ISENSE comparator is the ISENSE pin that should be connected to the drain of the
external PFET. The inductor current is determined by sensing the VDS. It can be calculated as follows.
VISENSE = VIN − (RDSON * IIND_PEAK) = VIN − VDS
(6)
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Figure 4. Current Sensing by VDS
The current limit is activated when the voltage at the ADJ pin exceeds the voltage at the ISENSE pin. The ISENSE
comparator triggers the 9µs one shot pulse generator forcing the driver to turn the PFET off. The driver turns the
PFET back on after 9µs. If the current has not reduced below the set threshold, the cycle will repeat
continuously.
A filter capacitor, CADJ, should be placed as shown in Figure 4. CADJ filters unwanted noise so that the ISENSE
comparator will not be accidentally triggered. A value of 100pF to 1nF is recommended in most applications.
Higher values can be used to create a soft-start function (see START UP).
The current limit comparator has approximately 100ns of blanking time. This ensures that the PFET is fully on
when the current is sensed. However, under extreme conditions such as cold temperature, some PFETs may not
fully turn on within the blanking time. In this case, the current limit threshold must be increased. If the current limit
function is used, the on time must be greater than 100ns. Under low duty cycle operation, the maximum
operating frequency will be limited by this minimum on time.
During current limit operation, the output voltage will drop significantly as will operating frequency. As the load
current is reduced, the output will return to the programmed voltage. However, there is a current limit fold back
phenomenon inherent in this current limit architecture. See Figure 5.
Figure 5. Current Limit Fold Back Phenomenon
At high input voltages (>28V) increased undershoot at the switch node can cause an increase in the current limit
threshold. To avoid this problem, a low Vf Schottky catch diode must be used (see CATCH DIODE SELECTION
(D1)). Additionally, a resistor can be placed between the ISENSE pin and the switch node. Any value up to
approximately 600Ω is recommended.
START UP
The current limit circuit is active during start-up. During start-up the PFET will stay on until either the current limit
or the feedback comparator is tripped
If the current limit comparator is tripped first then the fold back characteristic should be taken into account. Start-
up into full load may require a higher current limit set point or the load must be applied after start-up.
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One problem with selecting a higher current limit is inrush current during start-up. Increasing the capacitance
(CADJ) in parallel with RADJ results in soft-start. CADJ and RADJ create an RC time constant forcing current limit to
activate at a lower current. The output voltage will ramp more slowly when using the soft-start functionality. There
are example start-up plots for CADJ equal to 1nF and 10nF in the Typical Performance Characteristics. Lower
values for CADJ will have little to no effect on soft-start.
EXTERNAL SENSE RESISTOR
The VDS of a PFET will tend to vary significantly over temperature. This will result an equivalent variation in
current limit. To improve current limit accuracy an external sense resistor can be connected from VIN to the
source of the PFET, as shown in Figure 6.
Figure 6. Current Sensing by External Resistor
PGATE
When switching, the PGATE pin swings from VIN (off) to some voltage below VIN (on). How far the PGATE will
swing depends on several factors including the capacitance, on time, and input voltage.
As shown in the Typical Performance Characteristics, PGATE voltage swing will increase with decreasing gate
capacitance. Although PGATE voltage will typically be around VIN-5V, with every small gate capacitances, this
value can increase to a typical maximum of VIN-8.3V.
Additionally, PGATE swing voltage will increase as on time increases. During long on times, such as when
operating at 100% duty cycle, the PGATE voltage will eventually fall to its maximum voltage of VIN-8.3V (typical)
regardless of the PFET gate capacitance.
The PGATE voltage will not fall below 0.4V (typical). Therefore, when the input voltage falls below approximately
9V, the PGATE swing voltage range will be reduced. At an input voltage of 7V, for instance, PGATE will swing
from 7V to a minimum of 0.4V.
DESIGN INFORMATION
Hysteretic control is a simple control scheme. However the operating frequency and other performance
characteristics highly depend on external conditions and components. If either the inductance, output
capacitance, ESR, VIN, or Cff is changed, there will be a change in the operating frequency and output ripple.
The best approach is to determine what operating frequency is desirable in the application and then begin with
the selection of the inductor and COUT ESR.
INDUCTOR SELECTION (L1)
The important parameters for the inductor are the inductance and the current rating. The LM3485 operates over
a wide frequency range and can use a wide range of inductance values. A good rule of thumb is to use the
equations used for Simple Switchers®. The equation for inductor ripple (Δi) as a function of output current (IOUT
)
is:
for Iout < 2.0Amps
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−0.366726
Δi ≤ Iout * 0.386827 * Iout
for Iout > 2.0Amps
Δi ≤ Iout * 0.3
The inductance can be calculated based upon the desired operating frequency where:
VIN - VDS - VOUT
D
L =
ñ
Di
f
(7)
(8)
And
VOUT + VD
D =
VIN - VDS + VD
where D is the duty cycle, VD is the diode forward voltage, and VDS is the voltage drop across the PFET.
The inductor should be rated to the following:
Ipk = (Iout+Δi/2)*1.1
(9)
Di2
3
iout2 +
IRMS
=
(10)
The inductance value and the resulting ripple is one of the key parameters controlling operating frequency. The
second is the ESR.
OUTPUT CAPACITOR SELECTION (COUT
)
The ESR of the output capacitor times the inductor ripple current is equal to the output ripple of the regulator.
However, the VHYST sets the first order value of this ripple. As ESR is increased with a given inductance, then
operating frequency increases as well. If ESR is reduced then the operating frequency reduces.
The use of ceramic capacitors has become a common desire of many power supply designers. However,
ceramic capacitors have a very low ESR resulting in a 90° phase shift of the output voltage ripple. This results in
low operating frequency and increased output ripple. To fix this problem a low value resistor should be added in
series with the ceramic output capacitor. Although counter intuitive, this combination of a ceramic capacitor and
external series resistance provide highly accurate control over the output voltage ripple. The other types
capacitor, such as Sanyo POS CAP and OS-CON, Panasonic SP CAP, Nichicon "NA" series, are also
recommended and may be used without additional series resistance.
For all practical purposes, any type of output capacitor may be used with proper circuit verification.
INPUT CAPACITOR SELECTION (CIN)
A bypass capacitor is required between the input source and ground. It must be located near the source pin of
the external PFET. The input capacitor prevents large voltage transients at the input and provides the
instantaneous current when the PFET turns on.
The important parameters for the input capacitor are the voltage rating and the RMS current rating. Follow the
manufacturer's recommended voltage derating. For high input voltage application, low ESR electrolytic capacitor,
the Nichicon "UD" series or the Panasonic "FK" series, is available. The RMS current in the input capacitor can
be calculated.
(VOUT* (VIN - VOUT))1/2
IRMS_CIN = IOUT
*
VIN
(11)
(12)
The input capacitor power dissipation can be calculated as follows.
PD(CIN) = IRMS_CIN2 * ESRCIN
The input capacitor must be able to handle the RMS current and the PD. Several input capacitors may be
connected in parallel to handle large RMS currents. In some cases it may be much cheaper to use multiple
electrolytic capacitors than a single low ESR, high performance capacitor such as OS-CON or Tantalum. The
capacitance value should be selected such that the ripple voltage created by the charge and discharge of the
capacitance is less than 10% of the total ripple across the capacitor.
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PROGRAMMING THE CURRENT LIMIT (RADJ
)
The current limit is determined by connecting a resistor (RADJ) between input voltage and the ADJ pin.
RADJ = IIND_PEAK * RDSON/ICL_ADJ
(13)
where:
RDSON : Drain-Source ON resistance of the external PFET
ICL_ADJ : 3.0µA minimum
IIND_PEAK = ILOAD + IRIPPLE/2
Using the minimum value for ICL_ADJ (3.0µA) ensures that the current limit threshold will be set higher than the
peak inductor current.
The RADJ value must be selected to ensure that the voltage at the ADJ pin does not fall below 3.5V. With this in
mind, RADJ_MAX = (VIN-3.5)/7µA. If a larger RADJ value is needed to set the desired current limit, either use a
PFET with a lower RDSON, or use a current sense resistor as shown in Figure 6.
The current limit function can be disabled by connecting the ADJ pin to ground and ISENSE to VIN.
CATCH DIODE SELECTION (D1)
The important parameters for the catch diode are the peak current, the peak reverse voltage, and the average
power dissipation. The average current through the diode can be calculated as following.
ID_AVE = IOUT* (1 − D)
(14)
The off state voltage across the catch diode is approximately equal to the input voltage. The peak reverse
voltage rating must be greater than input voltage. In nearly all cases a Schottky diode is recommended. In low
output voltage applications a low forward voltage provides improved efficiency. For high temperature
applications, diode leakage current may become significant and require a higher reverse voltage rating to
achieve acceptable performance.
P-CHANNEL MOSFET SELECTION (Q1)
The important parameters for the PFET are the maximum Drain-Source voltage (VDS), the on resistance (RDSON),
Current rating, and the input capacitance.
The voltage across the PFET when it is turned off is equal to the sum of the input voltage and the diode forward
voltage. The VDS must be selected to provide some margin beyond the input voltage.
PFET drain current, Id, must be rated higher than the peak inductor current, IIND-PEAK
.
Depending on operating conditions, the PGATE voltage may fall as low as VIN - 8.3V. Therefore, a PFET must
be selected with a VGS greater than the maximum PGATE swing voltage.
As input voltage decreases below 9V, PGATE swing voltage may also decrease. At 5.0V input the PGATE will
swing from VIN to VIN - 4.6V. To ensure that the PFET turns on quickly and completely, a low threshold PFET
should be used when the input voltage is less than 7V.
However, PFET switching losses will increase as the VGS threshold decreases. Therefore, whenever possible, a
high threshold PFET should be selected. Total power loss in the FET can be approximated using the following
equation:
PDswitch = RDSON*IOUT2*D + F*IOUT*VIN*(ton + toff)/2
(15)
where:
ton = FET turn on time
toff = FET turn off time
A value of 10ns to 20ns is typical for ton and toff.
A PFET should be selected with a turn on rise time of less than 100ns. Slower rise times will degrade efficiency,
can cause false current limiting, and in extreme cases may cause abnormal spiking at the PGATE pin.
14
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SNVS178G –JANUARY 2002–REVISED FEBRUARY 2013
The RDSON is used in determining the current limit resistor value, RADJ. Note that the RDSON has a positive
temperature coefficient. At 100°C, the RDSON may be as much as 150% higher than the 25°C value. This
increase in RDSON must be considered it when determining RADJ in wide temperature range applications. If the
current limit is set based upon 25°C ratings, then false current limiting can occur at high temperature.
Keeping the gate capacitance below 2000pF is recommended to keep switching losses and transition times low.
This will also help keep the PFET drive current low, which will improve efficiency and lower the power dissipation
within the controller.
As gate capacitance increases, operating frequency should be reduced and as gate capacitance decreases
operating frequency can be increased.
PCB Layout
The PC board layout is very important in all switching regulator designs. Poor layout can cause switching noise
into the feedback signal and general EMI problems. For minimal inductance, the wires indicated by heavy lines
should be as wide and short as possible. Keep the ground pin of the input capacitor as close as possible to the
anode of the diode. This path carries a large AC current. The switching node, the node with the diode cathode,
inductor, and FET drain, should be kept short. This node is one of the main sources for radiated EMI since it is
an AC voltage at the switching frequency. It is always good practice to use a ground plane in the design,
particularly at high currents.
The two ground pins, PWR GND and GND, should be connected by as short a trace as possible; they can be
connected underneath the device. These pins are resistively connected internally by approximately 50Ω. The
ground pins should be tied to the ground plane, or to a large ground trace in close proximity to both the FB
divider and COUT grounds.
The gate pin of the external PFET should be located close to the PGATE pin. However, if a very small FET is
used, a resistor may be required between PGATE and the gate of the FET to reduce high frequency ringing.
Since this resistor will slow the PFET's rise time, the current limit blanking time should be taken into
consideration (see CURRENT LIMIT OPERATION).
The feedback voltage signal line can be sensitive to noise. Avoid inductive coupling to the inductor or the
switching node, by keeping the FB trace away from these areas.
Figure 7. Typical PCB Layout Schematic (3.3V output)
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Figure 8. Top Layer,
Typical PCB Layout (3.3V Output)
Figure 9. Bottom Layer,
Typical PCB Layout (3.3V Output)
Figure 10. Silk Screen,
Typical PCB Layout (3.3V Output)
C1: CIN 22µF/35V EEJL1VD226R (Panasonic)
C2: COUT 100µF/6.3V 6TPC100M (Sanyo)
C3: CADJ 1nF Ceramic Chip Capacitor
C4: CFF 100pF Ceramic Chip Capacitor
D1: 1A/40V MBRS140T3 (On Semiconductor)
L1: 22µH :QH66SN220M01L (Murata)
Q1: FDC5614P (Fairchild)
R1: 33kΩ Chip Resistor
R2: 20kΩ Chip Resistor
R3: RADJ 24kΩ Chip Resistor
16
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SNVS178G –JANUARY 2002–REVISED FEBRUARY 2013
REVISION HISTORY
Changes from Revision F (February 2013) to Revision G
Page
•
Changed layout of National Data Sheet to TI format .......................................................................................................... 16
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PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
1000
1000
(1)
(2)
(6)
(3)
(4/5)
LM3485MM
NRND
ACTIVE
VSSOP
VSSOP
DGK
8
8
TBD
Call TI
CU SN
Call TI
-40 to 125
-40 to 125
S29B
S29B
LM3485MM/NOPB
DGK
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
LM3485MMX
NRND
VSSOP
VSSOP
DGK
DGK
8
8
3500
3500
TBD
Call TI
CU SN
Call TI
-40 to 125
-40 to 125
S29B
S29B
LM3485MMX/NOPB
ACTIVE
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
LM3485Q1MM/NOPB
LM3485Q1MMX/NOPB
ACTIVE
ACTIVE
VSSOP
VSSOP
DGK
DGK
8
8
1000
3500
Green (RoHS
& no Sb/Br)
CU SN
CU SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 125
-40 to 125
SVJB
SVJB
Green (RoHS
& no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LM3485, LM3485-Q1 :
Catalog: LM3485
•
Automotive: LM3485-Q1
•
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
•
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
•
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Oct-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM3485MM
LM3485MM/NOPB
LM3485MMX
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
DGK
DGK
DGK
DGK
DGK
DGK
8
8
8
8
8
8
1000
1000
3500
3500
1000
3500
178.0
178.0
330.0
330.0
178.0
330.0
12.4
12.4
12.4
12.4
12.4
12.4
5.3
5.3
5.3
5.3
5.3
5.3
3.4
3.4
3.4
3.4
3.4
3.4
1.4
1.4
1.4
1.4
1.4
1.4
8.0
8.0
8.0
8.0
8.0
8.0
12.0
12.0
12.0
12.0
12.0
12.0
Q1
Q1
Q1
Q1
Q1
Q1
LM3485MMX/NOPB
LM3485Q1MM/NOPB
LM3485Q1MMX/NOPB VSSOP
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Oct-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LM3485MM
LM3485MM/NOPB
LM3485MMX
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
DGK
DGK
DGK
DGK
DGK
DGK
8
8
8
8
8
8
1000
1000
3500
3500
1000
3500
210.0
210.0
367.0
367.0
210.0
367.0
185.0
185.0
367.0
367.0
185.0
367.0
35.0
35.0
35.0
35.0
35.0
35.0
LM3485MMX/NOPB
LM3485Q1MM/NOPB
LM3485Q1MMX/NOPB
Pack Materials-Page 2
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相关型号：
LM3485MM/NOPB
IC SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO8, PLASTIC, MSOP-8, Switching Regulator or Controller
NSC
LM3485MMX/NOPB
IC SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO8, PLASTIC, MSOP-8, Switching Regulator or Controller
NSC
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