LM3524D [TI]

40V、0.2A 350KHz PWM 控制器;
LM3524D
型号: LM3524D
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

40V、0.2A 350KHz PWM 控制器

控制器
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LM2524D, LM3524D  
www.ti.com  
SNVS766E JUNE 2009REVISED MAY 2013  
LM2524D/LM3524D Regulating Pulse Width Modulator  
Check for Samples: LM2524D, LM3524D  
The LM3524D has a ±1% precision 5V reference.  
1
FEATURES  
The current carrying capability of the output drive  
transistors has been raised to 200 mA while reducing  
VCEsat and increasing VCE breakdown to 60V. The  
common mode voltage range of the error-amp has  
been raised to 5.5V to eliminate the need for a  
resistive divider from the 5V reference.  
2
Fully Interchangeable With Standard LM3524  
Family  
±1% Precision 5V Reference With Thermal  
Shut-Down  
Output Current to 200 mA DC  
60V Output Capability  
In the LM3524D the circuit bias line has been isolated  
from the shut-down pin. This prevents the oscillator  
pulse amplitude and frequency from being disturbed  
by shut-down. Also at high frequencies (300 kHz)  
the max. duty cycle per output has been improved to  
44% compared to 35% max. duty cycle in other  
3524s.  
Wide Common Mode Input Range for Error-  
Amp  
One Pulse per Period (Noise Suppression)  
Improved Max. Duty Cycle at High Frequencies  
Double Pulse Suppression  
In addition, the LM3524D can now be synchronized  
externally, through pin 3. Also a latch has been  
added to insure one pulse per period even in noisy  
environments. The LM3524D includes double pulse  
suppression logic that insures when a shut-down  
condition is removed the state of the T-flip-flop will  
change only after the first clock pulse has arrived.  
This feature prevents the same output from being  
pulsed twice in a row, thus reducing the possibility of  
core saturation in push-pull designs.  
Synchronize Through Pin 3  
DESCRIPTION  
The LM3524D family is an improved version of the  
industry standard LM3524. It has improved  
specifications and additional features yet is pin for pin  
compatible with existing 3524 families. New features  
reduce the need for additional external circuitry often  
required in the original version.  
Connection Diagram  
Figure 1. Top View  
See Package Number NFG  
See Package Number D  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2009–2013, Texas Instruments Incorporated  
LM2524D, LM3524D  
SNVS766E JUNE 2009REVISED MAY 2013  
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Block Diagram  
2
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Absolute Maximum Ratings(1)(2)  
Supply Voltage  
40V  
55V  
Collector Supply Voltage  
LM2524D  
LM3524D  
40V  
Output Current DC (each)  
200 mA  
Oscillator Charging Current (Pin 7)  
Internal Power Dissipation  
5 mA  
1W  
(3)  
Operating Junction Temperature Range  
LM2524D  
LM3524D  
40°C to +125°C  
0°C to +125°C  
150°  
Maximum Junction Temperature  
Storage Temperature Range  
65°C to +150°C  
260°C  
Lead Temperature (Soldering 4 sec.)  
NFG, D Pkg.  
(1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not  
apply when operating the device beyond its rated operating conditions.  
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and  
specifications.  
(3) For operation at elevated temperatures, devices in the NFG package must be derated based on a thermal resistance of 86°C/W,  
junction to ambient. Devices in the D package must be derated at 125°C/W, junction to ambient.  
Electrical Characteristics(1)  
Symbol  
Parameter  
Conditions  
LM2524D  
LM3524D  
Units  
Typ  
Tested Design  
Limit(2) Limit(3)  
Typ  
Tested Design  
Limit(2) Limit(3)  
REFERENCE SECTION  
VREF  
Output Voltage  
5
4.85  
5.15  
15  
4.80  
5.20  
30  
5
4.75  
5.25  
VMin  
VMax  
VRLine  
VRLoad  
Line Regulation  
Load Regulation  
VIN = 8V to 40V  
10  
10  
66  
10  
10  
66  
25  
25  
50  
50  
mVMax  
mVMax  
dB  
IL = 0 mA to 20 mA  
f = 120 Hz  
15  
25  
ΔVIN/ΔVREF Ripple Rejection  
IOS  
Short Circuit Current  
VREF = 0  
25  
25  
mA Min  
50  
50  
180  
200  
mA Max  
NO  
Output Noise  
10 Hz f 10 kHz  
40  
20  
100  
500  
40  
20  
100  
μVrms  
Max  
Long Term Stability  
TA = 125°C  
mV/kHr  
OSCILLATOR SECTION  
fOSC  
fOSC  
Max. Freq.  
RT = 1k, CT = 0.001 μF(4)  
RT = 5.6k, CT = 0.01 μF(4)  
550  
20  
350  
20  
kHzMin  
kHzMin  
Initial Accuracy  
17.5  
17.5  
22.5  
34  
22.5  
30  
kHzMax  
kHzMin  
RT = 2.7k, CT = 0.01 μF(4)  
38  
38  
42  
46  
kHzMax  
(1) Unless otherwise stated, these specifications apply for TA = TJ = 25°C. Boldface numbers apply over the rated temperature range:  
LM2524D is 40° to 85°C and LM3524D is 0°C to 70°C. VIN = 20V and fOSC = 20 kHz.  
(2) Tested limits are ensured and 100% tested in production.  
(3) Design limits are ensured (but not 100% production tested) over the indicated temperature and supply voltage range. These limits are  
not used to calculate outgoing quality level.  
(4) The value of a Ct capacitor can vary with frequency. Careful selection of this capacitor must be made for high frequency operation.  
Polystyrene was used in this test. NPO ceramic or polypropylene can also be used.  
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Electrical Characteristics(1) (continued)  
Symbol  
Parameter  
Conditions  
LM2524D  
LM3524D  
Units  
Typ  
Tested Design  
Limit(2) Limit(3)  
Typ  
Tested Design  
Limit(2) Limit(3)  
ΔfOSC  
Freq. Change with VIN  
VIN = 8 to 40V  
0.5  
5
1
0.5  
5
1.0  
%
Max  
ΔfOSC  
Freq. Change with Temp. TA = 55°C to +125°C  
at 20 kHz RT = 5.6k,  
%
CT = 0.01 μF  
VOSC  
tPW  
Output Amplitude (Pin 3)  
RT = 5.6k, CT = 0.01 μF  
3
2.4  
1.5  
3
2.4  
VMin  
(5)  
Output Pulse Width (Pin 3) RT = 5.6k, CT = 0.01 μF  
0.5  
3.4  
1.1  
0.5  
1.5  
3.8  
0.6  
μsMax  
VMax  
VMin  
Sawtooth Peak Voltage  
Sawtooth Valley Voltage  
RT = 5.6k, CT = 0.01 μF  
RT = 5.6k, CT = 0.01 μF  
3.6  
0.8  
3.8  
0.6  
ERROR-AMP SECTION  
VIO  
IIB  
Input Offset Voltage  
VCM = 2.5V  
VCM = 2.5V  
VCM = 2.5V  
2
1
8
8
10  
10  
1
2
1
10  
10  
1
mVMax  
μAMax  
μAMax  
μAMin  
Input Bias Current  
Input Offset Current  
IIO  
0.5  
1.0  
65  
0.5  
ICOSI  
Compensation Current  
(Sink)  
VIN(I) VIN(NI) = 150 mV  
65  
95  
95  
125  
125  
μAMax  
μAMin  
ICOSO  
Compensation Current  
(Source)  
VIN(NI) VIN(I) = 150 mV  
125  
125  
95  
95  
65  
74  
65  
μAMax  
dBMin  
VMin  
AVOL  
Open Loop Gain  
RL = , VCM = 2.5 V  
80  
60  
1.4  
5.4  
80  
70  
1.5  
5.5  
60  
VCMR  
Common Mode Input  
Voltage Range  
1.5  
5.5  
VMax  
CMRR  
Common Mode Rejection  
Ratio  
90  
3
80  
90  
2
80  
dBMin  
GBW  
VO  
Unity Gain Bandwidth  
Output Voltage Swing  
AVOL = 0 dB, VCM = 2.5V  
MHz  
VMin  
VMax  
RL = ∞  
0.5  
5.5  
0.5  
5.5  
PSRR  
Power Supply Rejection  
Ratio  
VIN = 8 to 40V  
80  
70  
80  
65  
dbMin  
COMPARATOR SECTION  
Minimum Duty Cycle  
Pin 9 = 0.8V,  
[RT = 5.6k, CT = 0.01 μF]  
tON/tOSC  
tON/tOSC  
tON/tOSC  
VCOMPZ  
0
0
0
0
%
Max  
Maximum Duty Cycle  
Maximum Duty Cycle  
Pin 9 = 3.9V,  
[RT = 5.6k, CT = 0.01 μF]  
49  
45  
35  
49  
45  
35  
%
%
Min  
Pin 9 = 3.9V,  
[RT = 1k, CT = 0.001 μF]  
44  
1
44  
1
Min  
Input Threshold  
(Pin 9)  
Zero Duty Cycle  
V
VCOMPM  
IIB  
Input Threshold (Pin 9)  
Input Bias Current  
Maximum Duty Cycle  
3.5  
3.5  
V
1  
1  
μA  
CURRENT LIMIT SECTION  
VSEN  
Sense Voltage  
V
(Pin 2) V(Pin 1) 150 mV  
180  
220  
180  
220  
mVMin  
200  
200  
mVMax  
mV/°C  
VMin  
TC-Vsense  
Sense Voltage T.C.  
0.2  
0.7  
1
0.2  
0.7  
1
Common Mode Voltage  
Range  
V5 V4 = 300 mV  
VMax  
(5) OSC amplitude is measured open circuit. Available current is limited to 1 mA so care must be exercised to limit capacitive loading of fast  
pulses.  
4
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Electrical Characteristics(1) (continued)  
Symbol  
Parameter  
Conditions  
LM2524D  
LM3524D  
Units  
Typ  
Tested Design  
Limit(2) Limit(3)  
Typ  
Tested Design  
Limit(2) Limit(3)  
SHUT DOWN SECTION  
VSD High Input Voltage  
V
(Pin 2) V(Pin 1) 150 mV  
1
1
0.5  
1.5  
1
1
0.5  
1.5  
VMin  
VMax  
mA  
ISD  
High Input Current  
I(pin 10)  
OUTPUT SECTION (EACH OUTPUT)  
VCES  
ICES  
Collector Emitter Voltage  
Breakdown  
IC 100 μA  
55  
50  
40  
VMin  
Collector Leakage Current VCE = 60V  
VCE = 55V  
VCE = 40V  
0.1  
μAMax  
0.1  
0.2  
1.5  
18  
50  
0.7  
2.5  
17  
VCESAT  
Saturation Voltage  
IE = 20 mA  
IE = 200 mA  
IE = 50 mA  
0.2  
1.5  
18  
0.5  
2.2  
17  
VMax  
VEO  
tR  
Emitter Output Voltage  
Rise Time  
VMin  
ns  
VIN = 20V,  
IE = 250 μA  
RC = 2k  
200  
200  
tF  
Fall Time  
RC = 2k  
100  
100  
ns  
SUPPLY CHARACTERISTICS SECTION  
VIN  
Input Voltage Range  
After Turn-on  
8
8
VMin  
VMax  
°C  
40  
40  
(6)  
T
Thermal Shutdown Temp.  
Stand By Current  
160  
5
160  
5
IIN  
VIN = 40V(7)  
10  
10  
mA  
(6) For operation at elevated temperatures, devices in the NFG package must be derated based on a thermal resistance of 86°C/W,  
junction to ambient. Devices in the D package must be derated at 125°C/W, junction to ambient.  
(7) Pins 1, 4, 7, 8, 11, and 14 are grounded; Pin 2 = 2V. All other inputs and outputs open.  
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Typical Performance Characteristics  
Switching Transistor Peak Output Current  
vs Temperature  
Maximum Average Power Dissipation (NFG, D Packages)  
Figure 2.  
Figure 3.  
Maximum & Minimum  
Duty Cycle Threshold Voltage  
Output Transistor  
Saturation Voltage  
Figure 4.  
Figure 5.  
Output Transistor Emitter  
Voltage  
Reference Transistor  
Peak Output Current  
Figure 6.  
Figure 7.  
6
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Typical Performance Characteristics (continued)  
Standby Current  
vs Voltage  
Standby Current  
vs Temperature  
Figure 8.  
Figure 9.  
Current Limit Sense Voltage  
Figure 10.  
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TEST CIRCUIT  
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Functional Description  
Internal Voltage Regulator  
The LM3524D has an on-chip 5V, 50 mA, short circuit protected voltage regulator. This voltage regulator  
provides a supply for all internal circuitry of the device and can be used as an external reference.  
For input voltages of less than 8V the 5V output should be shorted to pin 15, VIN, which disables the 5V  
regulator. With these pins shorted the input voltage must be limited to a maximum of 6V. If input voltages of  
6V–8V are to be used, a pre-regulator, as shown in Figure 11, must be added.  
*Minimum CO of 10 μF required for stability.  
Figure 11.  
Oscillator  
The LM3524D provides a stable on-board oscillator. Its frequency is set by an external resistor, RT and capacitor,  
CT. A graph of RT, CT vs oscillator frequency is shown is Figure 12. The oscillator's output provides the signals  
for triggering an internal flip-flop, which directs the PWM information to the outputs, and a blanking pulse to turn  
off both outputs during transitions to ensure that cross conduction does not occur. The width of the blanking  
pulse, or dead time, is controlled by the value of CT, as shown in Figure 13. The recommended values of RT are  
1.8 kΩ to 100 kΩ, and for CT, 0.001 μF to 0.1 μF.  
If two or more LM3524D's must be synchronized together, the easiest method is to interconnect all pin 3  
terminals, tie all pin 7's (together) to a single CT, and leave all pin 6's open except one which is connected to a  
single RT. This method works well unless the LM3524D's are more than 6apart.  
A second synchronization method is appropriate for any circuit layout. One LM3524D, designated as master,  
must have its RTCT set for the correct period. The other slave LM3524D(s) should each have an RTCT set for a  
10% longer period. All pin 3's must then be interconnected to allow the master to properly reset the slave units.  
The oscillator may be synchronized to an external clock source by setting the internal free-running oscillator  
frequency 10% slower than the external clock and driving pin 3 with a pulse train (approx. 3V) from the clock.  
Pulse width should be greater than 50 ns to insure full synchronization.  
Figure 12.  
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Figure 13.  
Error Amplifier  
The error amplifier is a differential input, transconductance amplifier. Its gain, nominally 86 dB, is set by either  
feedback or output loading. This output loading can be done with either purely resistive or a combination of  
resistive and reactive components. A graph of the amplifier's gain vs output load resistance is shown in  
Figure 14.  
Figure 14.  
The output of the amplifier, or input to the pulse width modulator, can be overridden easily as its output  
impedance is very high (ZO 5 MΩ). For this reason a DC voltage can be applied to pin 9 which will override the  
error amplifier and force a particular duty cycle to the outputs. An example of this could be a non-regulating  
motor speed control where a variable voltage was applied to pin 9 to control motor speed. A graph of the output  
duty cycle vs the voltage on pin 9 is shown in Figure 15.  
The duty cycle is calculated as the percentage ratio of each output's ON-time to the oscillator period. Paralleling  
the outputs doubles the observed duty cycle.  
10  
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Figure 15.  
The amplifier's inputs have a common-mode input range of 1.5V–5.5V. The on board regulator is useful for  
biasing the inputs to within this range.  
Current Limiting  
The function of the current limit amplifier is to override the error amplifier's output and take control of the pulse  
width. The output duty cycle drops to about 25% when a current limit sense voltage of 200 mV is applied  
between the +CL and CLsense terminals. Increasing the sense voltage approximately 5% results in a 0% output  
duty cycle. Care should be taken to ensure the 0.7V to +1.0V input common-mode range is not exceeded.  
In most applications, the current limit sense voltage is produced by a current through a sense resistor. The  
accuracy of this measurement is limited by the accuracy of the sense resistor, and by a small offset current,  
typically 100 μA, flowing from +CL to CL.  
Output Stages  
The outputs of the LM3524D are NPN transistors, capable of a maximum current of 200 mA. These transistors  
are driven 180° out of phase and have non-committed open collectors and emitters as shown in Figure 16.  
Figure 16.  
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Typical Applications  
Figure 17. Positive Regulator, Step-Up Basic Configuration (IIN(MAX) = 80 mA)  
(1)  
Figure 18. Positive Regulator, Step-Up Boosted Current Configuration  
12  
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Figure 19. Positive Regulator, Step-Down Basic Configuration (IIN(MAX) = 80 mA)  
(2)  
Figure 20. Positive Regulator, Step-Down Boosted Current Configuration  
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Figure 21. Boosted Current Polarity Inverter  
(3)  
Basic Switching Regulator Theory and Applications  
The basic circuit of a step-down switching regulator circuit is shown in Figure 22, along with a practical circuit  
design using the LM3524D in Figure 25.  
Figure 22. Basic Step-Down Switching Regulator  
The circuit works as follows: Q1 is used as a switch, which has ON and OFF times controlled by the pulse width  
modulator. When Q1 is ON, power is drawn from VIN and supplied to the load through L1; VA is at approximately  
VIN, D1 is reverse biased, and Co is charging. When Q1 turns OFF the inductor L1 will force VA negative to keep  
the current flowing in it, D1 will start conducting and the load current will flow through D1 and L1. The voltage at  
VAis smoothed by the L1, Co filter giving a clean DC output. The current flowing through L1 is equal to the  
nominal DC load current plus some ΔIL which is due to the changing voltage across it. A good rule of thumb is to  
set ΔILP-P 40% × Io.  
14  
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Figure 23. Relation of Switch Timing to Inductor Current in Step-Down Regulator  
(4)  
(5)  
Neglecting VSAT, VD, and settling ΔIL+ = ΔIL ;  
where T = Total Period  
The above shows the relation between VIN, Vo and duty cycle.  
(6)  
(7)  
as Q1 only conducts during tON  
.
The efficiency, η, of the circuit is:  
(8)  
ηMAX will be further decreased due to switching losses in Q1. For this reason Q1 should be selected to have the  
maximum possible fT, which implies very fast rise and fall times.  
Calculating Inductor L1  
(9)  
Since ΔIL+ = ΔIL= 0.4Io  
Solving the above for L1  
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(10)  
where: L1 is in Henrys  
f is switching frequency in Hz  
Also, see LM1578 data sheet for graphical methods of inductor selection.  
Calculating Output Filter Capacitor Co  
Figure 23 shows L1's current with respect to Q1's tON and tOFF times (VA is at the collector of Q1). This curent  
must flow to the load and Co. Co's current will then be the difference between IL, and Io.  
Ico = IL Io  
(11)  
From Figure 23 it can be seen that current will be flowing into Co for the second half of tON through the first half of  
tOFF, or a time, tON/2 + tOFF/2. The current flowing for this time is ΔIL/4. The resulting ΔVc or ΔVo is described by:  
(12)  
For best regulation, the inductor's current cannot be allowed to fall to zero. Some minimum load current Io, and  
thus inductor current, is required as shown below:  
(13)  
Figure 24. Inductor Current Slope in Step-Down Regulator  
A complete step-down switching regulator schematic, using the LM3524D, is illustrated in Figure 25. Transistors  
Q1 and Q2 have been added to boost the output to 1A. The 5V regulator of the LM3524D has been divided in  
half to bias the error amplifier's non-inverting input to within its common-mode range. Since each output  
transistor is on for half the period, actually 45%, they have been paralleled to allow longer possible duty cycle, up  
to 90%. This makes a lower possible input voltage. The output voltage is set by:  
(14)  
where VNI is the voltage at the error amplifier's non-inverting input.  
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Resistor R3 sets the current limit to:  
(15)  
Figure 26 and Figure 27 show a PC board layout and stuffing diagram for the 5V, 1A regulator of Figure 25. The  
regulator's performance is listed in Table 1.  
*Mounted to Staver Heatsink No. V5-1.  
Q1 = BD344  
Q2 = 2N5023  
L1 = >40 turns No. 22 wire on Ferroxcube No. K300502 Torroid core.  
Figure 25. 5V, 1 Amp Step-Down Switching Regulator  
Table 1.  
Parameter  
Conditions  
VIN = 10V, Io = 1A  
Typical Characteristics  
Output Voltage  
5V  
Switching Frequency  
Short Circuit Current Limit  
Load Regulation  
VIN = 10V, Io = 1A  
VIN = 10V  
20 kHz  
1.3A  
VIN = 10V  
Io = 0.2 1A  
3 mV  
Line Regulation  
ΔVIN = 10 20V,  
Io = 1A  
6 mV  
80%  
Efficiency  
VIN = 10V, Io = 1A  
VIN = 10V, Io = 1A  
Output Ripple  
10 mVp-p  
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Figure 26. 5V, 1 Amp Switching Regulator, Foil Side  
Figure 27. Stuffing Diagram, Component Side  
The Step-Up Switching Regulator  
Figure 28 shows the basic circuit for a step-up switching regulator. In this circuit Q1 is used as a switch to  
alternately apply VIN across inductor L1. During the time, tON, Q1 is ON and energy is drawn from VIN and stored  
in L1; D1 is reverse biased and Io is supplied from the charge stored in Co. When Q1 opens, tOFF, voltage V1 will  
rise positively to the point where D1 turns ON. The output current is now supplied through L1, D1 to the load and  
any charge lost from Co during tON is replenished. Here also, as in the step-down regulator, the current through  
L1 has a DC component plus some ΔIL. ΔIL is again selected to be approximately 40% of IL. Figure 29 shows the  
inductor's current in relation to Q1's ON and OFF times.  
18  
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SNVS766E JUNE 2009REVISED MAY 2013  
Figure 28. Basic Step-Up Switching Regulator  
Figure 29. Relation of Switch Timing to Inductor Current in Step-Up Regulator  
(16)  
(17)  
Since ΔIL+ = ΔIL, VINtON = VotOFF VINtOFF  
,
and neglecting VSAT and VD1  
The above equation shows the relationship between VIN, Vo and duty cycle.  
In calculating input current IIN(DC), which equals the inductor's DC current, assume first 100% efficiency:  
(18)  
(19)  
for η = 100%, POUT = PIN  
This equation shows that the input, or inductor, current is larger than the output current by the factor (1 +  
tON/tOFF). Since this factor is the same as the relation between Vo and VIN, IIN(DC) can also be expressed as:  
(20)  
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So far it is assumed η = 100%, where the actual efficiency or ηMAX will be somewhat less due to the saturation  
voltage of Q1 and forward on voltage of D1. The internal power loss due to these voltages is the average IL  
current flowing, or IIN, through either VSAT or VD1. For VSAT = VD1 = 1V this power loss becomes IIN(DC) (1V). ηMAX  
is then:  
(21)  
(22)  
This equation assumes only DC losses, however ηMAX is further decreased because of the switching time of Q1  
and D1.  
In calculating the output capacitor Co it can be seen that Co supplies Io during tON. The voltage change on Co  
during this time will be some ΔVc = ΔVo or the output ripple of the regulator. Calculation of Co is:  
(23)  
where: Co is in farads, f is the switching frequency,  
ΔVo is the p-p output ripple  
Calculation of inductor L1 is as follows:  
(24)  
VIN is applied across L1  
(25)  
where: L1 is in henrys, f is the switching frequency in Hz  
To apply the above theory, a complete step-up switching regulator is shown in Figure 30. Since VIN is 5V, VREF is  
tied to VIN. The input voltage is divided by 2 to bias the error amplifier's inverting input. The output voltage is:  
(26)  
The network D1, C1 forms a slow start circuit.  
20  
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SNVS766E JUNE 2009REVISED MAY 2013  
This holds the output of the error amplifier initially low thus reducing the duty-cycle to a minimum. Without the  
slow start circuit the inductor may saturate at turn-on because it has to supply high peak currents to charge the  
output capacitor from 0V. It should also be noted that this circuit has no supply rejection. By adding a reference  
voltage at the non-inverting input to the error amplifier, see Figure 31, the input voltage variations are rejected.  
The LM3524D can also be used in inductorless switching regulators. Figure 32 shows a polarity inverter which if  
connected to Figure 30 provides a 15V unregulated output.  
L1 = > 25 turns No. 24 wire on Ferroxcube No. K300502 Toroid core.  
Figure 30. 15V, 0.5A Step-Up Switching Regulator  
Figure 31. Replacing R3/R4 Divider in Figure 30 with Reference Circuit Improves Line Regulation  
Figure 32. Polarity Inverter Provides Auxiliary 15V Unregulated Output from Circuit of Figure 30  
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REVISION HISTORY  
Changes from Revision D (May 2013) to Revision E  
Page  
Changed layout of National Data Sheet to TI format .......................................................................................................... 21  
22  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
7-Jun-2022  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
LM3524DM/NOPB  
LM3524DMX/NOPB  
ACTIVE  
ACTIVE  
SOIC  
SOIC  
D
D
16  
16  
48  
RoHS & Green  
SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
0 to 125  
0 to 125  
LM3524DM  
LM3524DM  
Samples  
Samples  
2500 RoHS & Green  
SN  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
7-Jun-2022  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
8-Jun-2022  
TAPE AND REEL INFORMATION  
REEL DIMENSIONS  
TAPE DIMENSIONS  
K0  
P1  
W
B0  
Reel  
Diameter  
Cavity  
A0  
A0 Dimension designed to accommodate the component width  
B0 Dimension designed to accommodate the component length  
K0 Dimension designed to accommodate the component thickness  
Overall width of the carrier tape  
W
P1 Pitch between successive cavity centers  
Reel Width (W1)  
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  
Sprocket Holes  
Q1 Q2  
Q3 Q4  
Q1 Q2  
Q3 Q4  
User Direction of Feed  
Pocket Quadrants  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LM3524DMX/NOPB  
SOIC  
D
16  
2500  
330.0  
16.4  
6.5  
10.3  
2.3  
8.0  
16.0  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
8-Jun-2022  
TAPE AND REEL BOX DIMENSIONS  
Width (mm)  
H
W
L
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SOIC 16  
SPQ  
Length (mm) Width (mm) Height (mm)  
356.0 356.0 35.0  
LM3524DMX/NOPB  
D
2500  
Pack Materials-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
8-Jun-2022  
TUBE  
T - Tube  
height  
L - Tube length  
W - Tube  
width  
B - Alignment groove width  
*All dimensions are nominal  
Device  
Package Name Package Type  
SOIC  
Pins  
SPQ  
L (mm)  
W (mm)  
T (µm)  
B (mm)  
LM3524DM/NOPB  
D
16  
48  
495  
8
4064  
3.05  
Pack Materials-Page 3  
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