LM3673TL-ADJ/NOPB [TI]

2-MHz, 350-mA Step-Down DC-DC Converter;
LM3673TL-ADJ/NOPB
型号: LM3673TL-ADJ/NOPB
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
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2-MHz, 350-mA Step-Down DC-DC Converter

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LM3673  
SNVS434L JULY 2006REVISED OCTOBER 2015  
LM3673 2-MHz, 350-mA Step-Down DC-DC Converter  
1 Features  
3 Description  
The LM3673 step-down DC-DC converter is  
1
16-µA Typical Quiescent Current  
optimized for powering low voltage circuits from a  
single Li-Ion cell battery and input voltage rails from  
2.7 V to 5.5 V. It provides up to 350-mA load current  
over the entire input voltage range. There are several  
different fixed voltage output options available, as  
well as an adjustable output voltage version ranging  
from 1.1 V to 3.3 V.  
350-mA Maximum Load Capability  
2-MHz PWM Fixed Switching Frequency (Typical)  
Automatic PFM/PWM Mode Switching  
Available in Fixed and Adjustable Output Voltages  
Internal Synchronous Rectification for High  
Efficiency  
The device offers superior features and performance  
for mobile phones and similar portable systems. The  
LM3673 uses intelligent automatic switching between  
pulse width modulation (PWM) and pulse frequency  
modulation (PFM) for better efficiency. During PWM  
mode, the device operates at a fixed-frequency of  
2 MHz (typical). Hysteretic PFM mode extends the  
battery life by reducing the quiescent current to 16 µA  
(typical) during light load and standby operation.  
Internal synchronous rectification provides high  
efficiency during PWM mode operation. In shutdown  
mode, the device turns off and reduces battery  
consumption to 0.01 µA (typical).  
Internal Soft Start  
0.01-µA Typical Shutdown Current  
Operates From a Single Li-Ion Cell Battery  
Current Overload and Thermal Shutdown  
Protection  
Only Three Tiny Surface-Mount External  
Components Required (One Inductor, Two  
Ceramic Capacitors)  
2 Applications  
Mobile Phones  
PDAs  
The LM3673 is available in a tiny 5-pin DSBGA  
package. A high switching frequency of 2 MHz  
(typical) allows the use of three tiny surface-mount  
components: an inductor and two ceramic capacitors.  
MP3 Players  
W-LAN  
Portable Instruments  
Digital Still Cameras  
Portable Hard Disk Drives  
Device Information(1)  
PART NUMBER  
PACKAGE  
BODY SIZE (MAX)  
LM3673  
DSBGA (5)  
1.413 mm × 1.083 mm  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
Typical Application Circuit for ADJ Version  
Typical Application Circuit  
VIN  
VIN  
L1: 2.2 µH  
L1: 2.2 µH  
VOUT  
2.7 V to 5.5 V  
2.7 V to 5.5 V  
VIN  
GND  
EN  
VOUT  
VIN  
GND  
EN  
SW  
FB  
SW  
1
5
1
5
COUT  
10 µF  
CIN  
COUT  
10 µF  
LM3673-  
ADJ  
CIN  
4.7 µF  
LM3673  
4.7 µF  
C1  
C2  
R1  
R2  
2
2
3
FB  
3
4
4
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
 
 
LM3673  
SNVS434L JULY 2006REVISED OCTOBER 2015  
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Table of Contents  
8.4 Device Functional Modes........................................ 11  
Application and Implementation ........................ 13  
9.1 Application Information............................................ 13  
9.2 Typical Applications ................................................ 13  
1
2
3
4
5
6
7
Features.................................................................. 1  
Applications ........................................................... 1  
Description ............................................................. 1  
Revision History..................................................... 2  
Voltage Options ..................................................... 3  
Pin Configuration and Functions......................... 3  
Specifications......................................................... 4  
7.1 Absolute Maximum Ratings ...................................... 4  
7.2 ESD Ratings.............................................................. 4  
7.3 Recommended Operating Ratings ........................... 4  
7.4 Thermal Information.................................................. 4  
7.5 Electrical Characteristics........................................... 5  
7.6 Typical Characteristics.............................................. 6  
Detailed Description .............................................. 9  
8.1 Overview ................................................................... 9  
8.2 Functional Block Diagram ......................................... 9  
8.3 Feature Description................................................. 10  
9
10 Power Supply Recommendations ..................... 19  
11 Layout................................................................... 20  
11.1 Layout Guidelines ................................................. 20  
11.2 Layout Example .................................................... 21  
11.3 DSBGA Package Assembly and Use ................... 21  
12 Device and Documentation Support ................. 22  
12.1 Device Support...................................................... 22  
12.2 Documentation Support ........................................ 22  
12.3 Community Resources.......................................... 22  
12.4 Trademarks........................................................... 22  
12.5 Electrostatic Discharge Caution............................ 22  
12.6 Glossary................................................................ 22  
8
13 Mechanical, Packaging, and Orderable  
Information ........................................................... 22  
4 Revision History  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
Changes from Revision K (April 2013) to Revision L  
Page  
Added Device Information and Pin Configuration and Functions sections, ESD Ratings table, Feature Description,  
Device Functional Modes, Application and Implementation, Power Supply Recommendations, Layout, Device and  
Documentation Support, and Mechanical, Packaging, and Orderable Information sections ................................................. 1  
Deleted Dissipation Ratings table - obsolete info................................................................................................................... 4  
Changes from Revision J (April 2013) to Revision K  
Page  
Changed layout of National Data Sheet to TI format ........................................................................................................... 20  
2
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5 Voltage Options  
ORDERABLE NUMBER(1)(2)  
LM3673TL-ADJ/NOPB  
VOLTAGE OPTION  
ADJ  
LM3673TLX-ADJ/NOPB  
LM3673TL-1.2/NOPB  
LM3673TLX-1.2/NOPB  
LM3673TL-1.5/NOPB  
LM3673TLX-1.5/NOPB  
LM3673TL-1.8/NOPB  
LM3673TLX-1.8/NOPB  
1.2  
1.5  
1.8  
(1) For the most current package and ordering information, see the Package Option Addendum at the end  
of this document, or see the TI web site at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
6 Pin Configuration and Functions  
YZR Package  
5-Pin DSBGA  
Top (Left) and Bottom (Right) Views  
GND  
VIN  
EN  
VIN  
EN  
A1  
GND  
A3  
C3  
A1  
C1  
A3  
C3  
SW  
FB  
SW  
FB  
B2  
B2  
C1  
Pin Functions  
PIN  
I/O  
Power  
DESCRIPTION  
NUMBER  
NAME  
VIN  
A1  
A3  
B2  
Power supply input. Connect to the input filter capacitor (Figure 17).  
Ground pin  
GND  
SW  
Ground  
Analog  
Switching node connection to the internal PFET switch and NFET synchronous rectifier.  
Enable pin. The device is in shutdown mode when voltage to this pin is < 0.4 V and enabled  
when > 1 V. Do not leave this pin floating.  
C1  
EN  
Input  
Feedback analog input. Connect directly to the output filter capacitor for fixed voltage versions.  
For adjustable version external resistor dividers are required (Figure 18). The internal resistor  
dividers are disabled for the adjustable version.  
C3  
FB  
Analog  
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7 Specifications  
7.1 Absolute Maximum Ratings(1)(2)  
MIN  
–0.2  
MAX  
UNIT  
V
VIN pin: voltage to GND  
6
(VIN + 0.2  
Internally Limited  
125  
FB, SW, EN pins  
GND0.2  
V
Continuous power dissipation(3)  
Junction temperature, TJ-MAX  
Maximum lead temperature (soldering, 10 sec.)  
Storage temperature, Tstg  
°C  
°C  
°C  
260  
–65  
150  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) If Military/Aerospace specified devices are required, contact the TI Sales Office/Distributors for availability and specifications.  
(3) Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ= 150°C (typical) and  
disengages at TJ= 130°C (typical).  
7.2 ESD Ratings  
VALUE  
±2000  
±200  
UNIT  
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)  
Machine model  
V(ESD)  
Electrostatic discharge  
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
7.3 Recommended Operating Ratings  
over operating free-air temperature range (unless otherwise noted)(1)(2)  
MIN  
2.7  
0
NOM  
MAX  
5.5  
UNIT  
Input voltage(3)  
V
Recommended load current  
Junction temperature, TJ  
350  
125  
85  
mA  
°C  
°C  
–30  
–30  
(4)  
Ambient temperature, TA  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) All voltages are with respect to the potential at the GND pin.  
(3) The input voltage range recommended for ideal applications performance for the specified output voltages are as follows: VIN = 2.7 V to  
4.5 V for 1.1 V VOUT < 1.5 V; VIN = 2.7 V to 5.5 V for 1.5 V VOUT < 1.8 V; VIN = (VOUT + VDROPOUT) to 5.5 V for 1.8 V VOUT 3.3 V  
where VDROPOUT = ILOAD × (RDSON, PFET + RINDUCTOR  
)
(4) In applications where high power dissipation and/or poor package resistance is present, the maximum ambient temperature may have to  
be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX), the  
maximum power dissipation of the device in the application (PD-MAX) and the junction to ambient thermal resistance of the package  
(RθJA) in the application, as given by the following equation:TA-MAX = TJ-MAX(RθJA × PD-MAX).  
7.4 Thermal Information  
LM3673  
THERMAL METRIC(1)  
YZR (DSBGA)  
5 PINS  
181.0  
UNIT  
RθJA  
RθJC(top)  
RθJB  
ψJT  
Junction-to-ambient thermal resistance(2)  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
0.9  
110.3  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
7.4  
ψJB  
110.3  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report, SPRA953.  
(2) Junction-to-ambient thermal resistance is highly application and board layout dependent. In applications where high power dissipation  
exists, special care must be given to thermal dissipation issues in board design.  
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7.5 Electrical Characteristics  
Typical limits apply for TJ = 25°C. Unless otherwise specified, minimum and maximum limits apply over the full operating  
ambient temperature range (30°C TA +85°C). Unless otherwise noted, specifications apply to the LM3673TL with VIN  
EN = 3.6 V.(1)(2)(3)  
=
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
VIN  
Input voltage  
See(4)  
2.7  
5.5  
V
Feedback voltage (fixed /  
ADJ)  
PWM mode(5)  
–2.5%  
2.5%  
Line regulation  
2.7 V VIN 5.5 V  
IOUT = 20 mA  
VFB  
0.025  
%/V  
Load regulation  
150 mA IOUT 350 mA  
VIN= 3.6 V  
0.0015  
%/mA  
VREF  
Internal reference voltage  
Shutdown supply current  
DC bias current into VIN  
0.5  
V
ISHDN  
EN = 0V  
0.01  
1
µA  
No load, device is not switching (FB forced  
higher than programmed output voltage)  
IQ  
16  
35  
µA  
RDSON (P)  
RDSON (N)  
ILIM  
Pin-pin resistance for PFET  
Pin-pin resistance for NFET  
Switch peak current limit  
Logic high input  
VIN= VGS= 3.6 V, TA = 25°C  
VIN= VGS= 3.6 V, TA = 25°C  
Open loop(6)  
350  
150  
750  
450  
250  
855  
mΩ  
mΩ  
mA  
V
590  
1
VIH  
VIL  
Logic low input  
0.4  
1
V
IEN  
Enable (EN) input current  
Internal oscillator frequency  
0.01  
2
µA  
MHz  
ƒOSC  
PWM mode(5)  
1.6  
2.6  
(1) All voltages are with respect to the potential at the GND pin.  
(2) Minimum and maximum limits are specified by design, test or statistical analysis. Typical numbers are not verified, but do represent the  
most likely norm.  
(3) The parameters in the electrical characteristic table are tested at VIN= 3.6 V unless otherwise specified. For performance over the input  
voltage range refer to datasheet curves.  
(4) The input voltage range recommended for ideal applications performance for the specified output voltages are as follows: VIN = 2.7 V to  
4.5 V for 1.1 V VOUT < 1.5 V; VIN = 2.7 V to 5.5 V for 1.5 V VOUT < 1.8 V; VIN = (VOUT+ VDROPOUT) to 5.5 V for 1.8 V VOUT 3.3 V,  
where VDROPOUT = ILOAD × (RDSON, PFET + RINDUCTOR).  
(5) Test condition: for VOUT less than 2.5 V, VIN = 3.6 V; for VOUT greater than or equal to 2.5 V, VIN = VOUT + 1 V.  
(6) Refer to for closed-loop data and its variation with regards to supply voltage and temperature. Electrical Characteristics reflects open-  
loop data (FB = 0 V and current drawn from SW pin ramped up until cycle-by-cycle current limit is activated). Closed-loop current limit is  
the peak inductor current measured in the application circuit by increasing output current until output voltage drops by 10%.  
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7.6 Typical Characteristics  
LM3673TL typical application (Figure 17), VIN = 3.6 V, VOUT= 1.5 V, TA = 25°C, unless otherwise noted.  
20  
18  
16  
14  
12  
10  
0.40  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
EN = V  
IN  
9b = Db5  
I
= 0 mA  
OUT  
T
= 85°C  
= 25°C  
A
T
A
T
A
= -30°C  
V
= 5.5V  
IN  
V
IN  
= 3.6V  
V
= 2.7V  
IN  
-30  
-10  
10  
30  
50  
70  
90  
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0  
SUPPLY VOLTAGE (V)  
TEMPERATURE (°C)  
Figure 1. Quiescent Supply Current vs. Supply Voltage  
Figure 2. Shutdown Current vs. Temperature  
Figure 3. Feedback Bias Current vs. Temperature  
Figure 4. Switching Frequency vs. Temperature  
600  
950  
V
IN  
= 2.7V  
Closed Loop = Solid  
Open Loop = Dash  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
V
= 4.5V  
IN  
900  
V
= 3.6V  
= 2.7V  
IN  
V
IN  
= 4.5V  
850  
800  
750  
700  
650  
tC9Ç  
V
= 3.6V  
= 2.7V  
IN  
V
IN  
V
IN  
V
IN  
= 4.5V  
bC9Ç  
V
IN  
= 2.7V  
V
IN  
= 3.6V  
V
= 3.6V  
IN  
V
IN  
= 4.5V  
V
IN  
= 2.7V  
-40 -20  
0
20  
40  
60  
80 100  
-30 -10  
10  
30  
50  
70  
90 110  
TEMPERATURE (oC)  
TEMPERATURE (°C)  
Figure 5. RDSON vs. Temperature  
Figure 6. Open/Closed Loop Current Limit vs. Temperature  
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Typical Characteristics (continued)  
LM3673TL typical application (Figure 17), VIN = 3.6 V, VOUT= 1.5 V, TA = 25°C, unless otherwise noted.  
1.530  
V
OUT  
= 1.5V  
1.525  
1.520  
1.515  
1.510  
1.505  
1.500  
1.495  
1.490  
I
= 10 mA  
OUT  
I
= 150 mA  
OUT  
I
= 350 mA  
OUT  
-40 -20  
0
20  
40  
60  
80 100  
TEMPERATURE (°C)  
VOUT = 1.5 V  
Figure 7. Output Voltage vs. Supply Voltage  
VOUT = 1.5 V  
Figure 8. Output Voltage vs. Temperature  
VOUT = 1.5 V (PFM to PWM)  
VOUT = 1.5 V  
Figure 9. Output Voltage vs. Output Current  
Figure 10. Mode Change by Load Transients  
VOUT = 1.5 V (PWM to PFM)  
VOUT = 1.5 V  
Output Current= 150 mA  
Figure 11. Mode Change by Load Transients  
Figure 12. Start-Up into PWM Mode  
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Typical Characteristics (continued)  
LM3673TL typical application (Figure 17), VIN = 3.6 V, VOUT= 1.5 V, TA = 25°C, unless otherwise noted.  
VOUT = 1.5 V  
Output Current= 5 mA  
Figure 13. Start-Up into PFM Mode  
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8 Detailed Description  
8.1 Overview  
The LM3673, a high-efficiency step-down DC-DC switching buck converter, delivers a constant voltage from a  
single Li-Ion battery and input voltage ranging from 2.7 V to 5.5 V to portable devices such as cell phones and  
PDAs. Using a voltage mode architecture with synchronous rectification, the LM3673 has the ability to deliver up  
to 350 mA depending on the input voltage, output voltage, ambient temperature and the inductor chosen.  
There are three modes of operation depending on the current required: pulse width modulation (PWM), pulse  
frequency modulation (PFM), and shutdown. The device operates in PWM mode at load current of approximately  
80 mA or higher. Lighter load current cause the device to automatically switch into PFM for reduced current  
consumption (IQ = 16 µA typical) and a longer battery life. Shutdown mode turns off the device, offering the  
lowest current consumption (ISHUTDOWN = 0.01 µA typical).  
Additional features include soft-start, undervoltage protection, current overload protection, and thermal shutdown  
protection. As shown in Figure 17, only three external power components are required for implementation. The  
part uses an internal reference voltage of 0.5 V. It is recommended to keep the part in shutdown until the input  
voltage is 2.7 V or higher.  
8.2 Functional Block Diagram  
VIN  
EN  
SW  
Current Limit  
Comparator  
+
Undervoltage  
Lockout  
Ramp  
Generator  
Soft  
Start  
-
Ref1  
PFM Current  
Comparator  
Thermal  
Shutdown  
+
Bandgap  
2-MHz  
Oscillator  
-
Ref2  
PWM Comparator  
Error  
Amp  
+
-
Control Logic  
Driver  
pfm_low  
pfm_hi  
VREF  
0.5 V  
+
-
VCOMP  
1 V  
+
-
+
-
Zero Crossing  
Comparator  
Frequency  
Compensation  
ADJ Version  
Fixed Version  
FB  
GND  
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8.3 Feature Description  
8.3.1 Circuit Operation  
During the first portion of each switching cycle, the control block in the LM3673 turns on the internal PFET  
switch. This allows current to flow from the input through the inductor to the output filter capacitor and load. The  
inductor limits the current to a ramp with a slope of (VIN – VOUT) / L by storing energy in a magnetic field.  
During the second portion of each cycle, the controller turns the PFET switch off, blocking current flow from the  
input, and then turns the NFET synchronous rectifier on. The inductor draws current from ground through the  
NFET to the output filter capacitor and load, which ramps the inductor current down with a slope of –VOUT / L.  
The output filter stores charge when the inductor current is high, and releases it when inductor current is low,  
smoothing the voltage across the load.  
The output voltage is regulated by modulating the PFET switch on time to control the average current sent to the  
load. The effect is identical to sending a duty-cycle modulated rectangular wave formed by the switch and  
synchronous rectifier at the SW pin to a low-pass filter formed by the inductor and output filter capacitor. The  
output voltage is equal to the average voltage at the SW pin.  
8.3.2 PWM Operation  
During PWM operation the converter operates as a voltage-mode controller with input voltage feed forward. This  
allows the converter to achieve good load and line regulation. The DC gain of the power stage is proportional to  
the input voltage. To eliminate this dependence, feed forward inversely proportional to the input voltage is  
introduced.  
While in PWM mode, the output voltage is regulated by switching at a constant frequency and then modulating  
the energy per cycle to control power to the load. At the beginning of each clock cycle the PFET switch is turned  
on and the inductor current ramps up until the comparator trips and the control logic turns off the switch. The  
current limit comparator can also turn off the switch in case the current limit of the PFET is exceeded. Then the  
NFET switch is turned on and the inductor current ramps down. The next cycle is initiated by the clock turning off  
the NFET and turning on the PFET.  
V
SW  
2V/DIV  
I
L
200 mA/DIV  
V
V
= 3.6V  
IN  
I
= 150 mA  
OUT  
= 1.5V  
OUT  
V
OUT  
10 mV/DIV  
AC Coupled  
TIME (200 ns/DIV)  
Figure 14. Typical PWM Operation  
8.3.3 Internal Synchronous Rectification  
While in PWM mode, the LM3673 uses an internal NFET as a synchronous rectifier to reduce rectifier forward  
voltage drop and associated power loss. Synchronous rectification provides a significant improvement in  
efficiency whenever the output voltage is relatively low compared to the voltage drop across an ordinary rectifier  
diode.  
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Feature Description (continued)  
8.3.4 Current Limiting  
A current limit feature allows the LM3673 to protect itself and external components during overload conditions.  
PWM mode implements current limiting using an internal comparator that trips at 750 mA (typical). If the output is  
shorted to ground the device enters a timed current limit mode where the NFET is turned on for a longer duration  
until the inductor current falls below a low threshold. This allows the inductor current more time to decay, thereby  
preventing runaway.  
8.3.5 Soft Start  
The LM3673 has a soft-start circuit that limits in-rush current during start-up. During start-up the switch current  
limit is increased in steps. Soft start is activated only if EN goes from logic low to logic high after VIN reaches 2.7  
V. Soft start is implemented by increasing switch current limit in steps of 70 mA, 140 mA, 280 mA, and 750 mA  
(typical switch current limit). The start-up time thereby depends on the output capacitor and load current. Typical  
start-up time with a 10-µF output capacitor and 150-mA load is 280 µs; with a 5-mA load start-up time is 240 µs.  
8.3.6 Low Drop Out Operation (LDO)  
The LM3673-ADJ can operate at 100% duty cycle (no switching; PMOS switch completely on) for LDO support of  
the output voltage. In this way the output voltage is controlled down to the lowest possible input voltage. When  
the device operates near 100% duty cycle, output voltage ripple is approximately 25 mV.  
The minimum input voltage needed to support the output voltage is:  
VIN, MIN = ILOAD × (RDSON, PFET + RINDUCTOR) + VOUT  
where  
ILOAD: Load current  
RDSON, PFET: Drain-to-source resistance of PFET switch in the triode region  
RINDUCTOR: Inductor resistance  
(1)  
8.4 Device Functional Modes  
8.4.1 PFM Operation  
At very light load, the converter enters PFM mode and operates with reduced switching frequency and supply  
current to maintain high efficiency.  
The part automatically transitions into PFM mode when either of two conditions occurs for a duration of 32 or  
more clock cycles:  
The NFET current reaches zero.  
The peak PMOS switch current drops below the IMODE level (typically IMODE < 30 mA + VIN / 42 ).  
2V/DIV  
V
SW  
I
L
200 mA/DIV  
VIN = 3.6V  
I
= 20 mA  
OUT  
VOUT = 1.5V  
V
OUT  
20 mV/DIV  
AC Coupled  
TIME (4 ms/DIV)  
Figure 15. Typical PFM Operation  
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Device Functional Modes (continued)  
During PFM operation, the converter positions the output voltage slightly higher than the nominal output voltage  
during PWM operation, allowing additional headroom for voltage drop during a load transient from light to heavy  
load. The PFM comparators sense the output voltage via the FB pin and control the switching of the output FETs  
such that the output voltage ramps from approximately 0.6% to approximately 1.7% above the nominal PWM  
output voltage. If the output voltage is below the high PFM comparator threshold, the PMOS power switch is  
turned on. It remains on until the output voltage reaches the high PFM threshold or the peak current exceeds the  
IPFM level set for PFM mode. The typical peak current in PFM mode is: IPFM = 112 mA + VIN / 27 .  
Once the PMOS power switch is turned off, the NMOS power switch is turned on until the inductor current ramps  
to zero. When the NMOS zero-current condition is detected, the NMOS power switch is turned off. If the output  
voltage is below the high PFM comparator threshold (see Figure 16), the PMOS switch is again turned on and  
the cycle is repeated until the output reaches the desired level. Once the output reaches the high PFM threshold,  
the NMOS switch is turned on briefly to ramp the inductor current to zero and then both output switches are  
turned off and the part enters an extremely low power mode. Quiescent supply current during this sleep mode is  
16 µA (typical), which allows the device to achieve high efficiency under extremely light load conditions.  
If the load current increases during PFM mode (see Figure 16) causing the output voltage to fall below the Low 2  
PFM threshold, the device automatically transitions into fixed-frequency PWM mode. When VIN = 2.7 V, the  
device transitions from PWM mode to PFM mode at approximately 35-mA output current and from PFM mode to  
PWM mode at approximately 85 mA. When VIN = 3.6 V, PWM-to-PFM transition happens at approximately 50  
mA and PFM-to-PWM transition happens at approximately 100mA. When VIN = 4.5 V, PWM-to-PFM transition  
happens at approximately 65 mA and PFM-to-PWM transition happens at approximately 115 mA.  
Iigh tCa Çhreshold  
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~1.017*ëouꢀ  
[oꢁd currenꢀ  
increꢁses  
[ow1 tCa Çhreshold  
~1.006*ëouꢀ  
/urrenꢀ loꢁd  
increꢁses,  
drꢁws ëouꢀ  
ꢀowꢁrds  
[ow2 tCa  
Çhreshold  
Iigh tCa  
bfeꢀ on  
drꢁins  
conducꢀor  
currenꢀ  
unꢀil  
L inducꢀor=0  
[ow tCa  
Çhreshold,  
ꢀurn on  
tfeꢀ on  
unꢀil  
ëolꢀꢁge  
Çhreshold  
reꢁched,  
go inꢀo  
Lpfm limiꢀ  
reꢁched  
tC9Ç  
[ow2 tCa Çhreshold  
ëouꢀ  
sleep mode  
tía aode ꢁꢀ  
aoderꢁꢀe ꢀo Ieꢁvy  
[oꢁds  
[ow2 tCa Çhreshold,  
swiꢀch ꢂꢁck ꢀo tíamode  
Figure 16. Operation in PFM Mode and Transfer to PWM Mode  
8.4.2 Shutdown Mode  
Setting the EN input pin low (< 0.4 V) places the LM3673 in shutdown mode. During shutdown the PFET switch,  
NFET switch, reference, control, and bias circuitry of the LM3673 are turned off. Setting EN high (> 1 V) enables  
normal operation. Setting the EN pin low is recommended to turn off the LM3673 during system power up and  
undervoltage conditions when the supply is less than 2.7 V. Do not leave the EN pin floating.  
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9 Application and Implementation  
NOTE  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
9.1 Application Information  
The LM3673 is designed for powering low-voltage circuits from a single Li-Ion cell battery and input-voltage rails  
from 2.7 V to 5.5 V. The device is internally powered from the VIN pin, and the typical switching frequency is 2  
MHz. The LM3673 is available in 1.2-V, 1.5-V, and 1.8-V options. An externally adjustable version is also  
available where the output voltage can be set with an external resistor divider to the FB pin.  
9.2 Typical Applications  
VIN  
L1: 2.2 µH  
2.7 V to 5.5 V  
VIN  
GND  
EN  
VOUT  
SW  
1
5
COUT  
10 µF  
CIN  
4.7 µF  
LM3673  
2
FB  
3
4
Figure 17. LM3673 Typical Application Circuit  
VIN  
L1: 2.2 µH  
VOUT  
2.7 V to 5.5 V  
VIN  
GND  
EN  
SW  
1
5
CIN  
COUT  
LM3673-  
ADJ  
4.7 µF  
C1  
C2  
10 µF  
R1  
R2  
2
FB  
3
4
Figure 18. LM3673-ADJ Typical Application Circuit  
9.2.1 Design Requirements  
For typical step-down DC-DC converter applications, use the parameters listed in Table 1.  
Table 1. Design Parameters  
DESIGN PARAMETER  
Minimum input voltage  
Output voltage  
EXAMPLE VALUE  
2.7 V  
several fixed options; adjustable  
350 mA  
Maximum load current  
Switching frequency  
2 MHz (typical)  
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9.2.2 Detailed Design Procedure  
9.2.2.1 Output Voltage Selection for LM3673-ADJ  
The output voltage of the adjustable device can be programmed through the resistor network connected from  
VOUT to FB, then to GND. VOUT is adjusted to make the voltage at FB equal to 0.5 V. The resistor from FB to  
GND (R2) must be 200 kto keep the current drawn through this network well below the 16-µA quiescent  
current level (PFM mode) but large enough that it is not susceptible to noise. If R2 is 200 k, and VFB is 0.5 V,  
the current through the resistor feedback network is 2.5 µA. The output voltage of the adjustable device ranges  
from 1.1 V to 3.3 V.  
The formula for output voltage selection is:  
w1  
VOUT = VFB * 1 +  
w2  
«
where  
VOUT: output voltage (V)  
VFB : feedback voltage = 0.5 V  
R1: feedback resistor from VOUT to FB  
R2: feedback resistor from FB to GND  
(2)  
For any output voltage greater than or equal to 1.1 V, a zero must be added around 45 kHz for stability. The  
formula for calculation of C1 is:  
1
/1 =  
(2 * p * R1 * 45 kHz)  
(3)  
For output voltages higher than 2.5 V, a pole must be placed at 45 kHz as well. If the pole and zero are at the  
same frequency the formula for calculation of C2 is:  
1
/2 =  
(2 * p * R2 * 45 kHz)  
(4)  
The formula for location of zero and pole frequency created by adding C1 and C2 is shown in Equation 5 and  
Equation 6. By adding C1, a zero as well as a higher frequency pole is introduced.  
1
Cz =  
(2 * p * R1 * C1)  
(5)  
(6)  
1
Cp =  
2 * p * (R1 R2) * (C1+C2)  
See Table 2.  
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(1)  
Table 2. LM3673-ADJ Configurations For Various VOUT  
VOUT(V)  
1.1  
R1(k)  
240  
280  
320  
357  
442  
432  
464  
523  
402  
464  
562  
R2 (k)  
200  
200  
200  
178  
200  
178  
178  
191  
100  
100  
100  
C1 (pF)  
15  
C2 (pF)  
None  
None  
None  
None  
None  
None  
None  
None  
None  
33  
L (µH)  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
CIN (µF)  
4.7  
COUT (µF)  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
1.2  
12  
4.7  
1.3  
12  
4.7  
1.5  
10  
4.7  
1.6  
8.2  
8.2  
8.2  
6.8  
8.2  
8.2  
6.8  
4.7  
1.7  
4.7  
1.8  
4.7  
1.875  
2.5  
4.7  
4.7  
2.8  
4.7  
3.3  
33  
4.7  
(1) Circuit of Typical Application Circuit for ADJ Version.  
9.2.2.2 Inductor Selection  
There are two main considerations when choosing an inductor; the inductor must not saturate, and the inductor  
current ripple must be small enough to achieve the desired output voltage ripple. Different saturation current  
rating specifications are followed by different manufacturers so attention must be given to details. Saturation  
current ratings are typically specified at 25°C. However, ratings at the maximum ambient temperature of  
application should be requested from the manufacturer. The minimum value of inductance to ensure good  
performance is 1.76 µH at ILIM (typical) DC current over the ambient temperature range. Shielded inductors  
radiate less noise and are preferred.  
There are two methods to choose the inductor saturation current rating.  
9.2.2.2.1 Method 1  
The saturation current must be greater than the sum of the maximum load current and the worst case average to  
peak inductor current. This can be written as:  
>
ISAT IOUTMAX + IRIPPLE  
VIN - VOUT  
VOUT  
VIN  
1
«
* ≈  
÷ ∆  
◊ «  
* ≈ ’  
where IRIPPLE  
=
÷ ∆ ÷  
2 * L  
◊ « f ◊  
where  
IRIPPLE: average to peak inductor current  
IOUTMAX: maximum load current (350 mA)  
VIN: maximum input voltage in application  
L : min inductor value including worst case tolerances (30% drop can be considered for Method 1)  
ƒ : minimum switching frequency (1.6 MHz)  
VOUT: output voltage  
(7)  
9.2.2.2.2 Method 2  
A more conservative and recommended approach is to choose an inductor that has a saturation current rating  
greater than the maximum current limit of 855 mA.  
A 2.2-µH inductor with a saturation current rating of at least 855 mA is recommended for most applications.  
Resistance of the inductor must be less than 0.3 for good efficiency. Table 3 lists suggested inductors and  
suppliers. For low-cost applications, an unshielded bobbin inductor could be considered. For noise critical  
applications, a toroidal or shielded-bobbin inductor must be used. A good practice is to lay out the board with  
overlapping footprints of both types for design flexibility. This allows substitution of a low-noise shielded inductor,  
in the event that noise from low-cost bobbin models is unacceptable.  
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9.2.2.3 Input Capacitor Selection  
A ceramic input capacitor of 4.7 µF, 6.3 V is sufficient for most applications. Place the input capacitor as close as  
possible to the VIN pin of the device. A larger value may be used for improved input voltage filtering. Use X7R or  
X5R types; do not use Y5V. DC bias characteristics of ceramic capacitors must be considered when selecting  
case sizes like 0805 and 0603. The minimum input capacitance to ensure good performance is 2.2 µF at 3-V DC  
bias; 1.5 µF at 5-V DC bias including tolerances and over ambient temperature range. The input filter capacitor  
supplies current to the PFET switch of the LM3673 in the first half of each cycle and reduces voltage ripple  
imposed on the input power source. The low ESR of a ceramic capacitor provides the best noise filtering of the  
input voltage spikes due to this rapidly changing current. Select a capacitor with sufficient ripple current rating.  
The input current ripple can be calculated as:  
2
VOUT  
VIN  
VOUT  
VIN  
r
«
÷
1 -  
+
*
IRMS = IOUTMAX  
*
12  
(VIN - VOUT) V  
*
OUT  
r =  
L f I  
* *  
V
IN  
*
OUTMAX  
*
The worst case is when VIN = 2 VOUT  
(8)  
Table 3. Suggested Inductors and Their Suppliers  
MODEL  
VENDOR  
DIMENSIONS L × W × H (mm)  
COIL  
DCR (maximum)  
BRL2518T2R2M  
DO3314-222MX  
LPO3310-222MX  
CDRH2D14-2R2  
Taiyo Yuden  
Coilcraft  
2.5 × 1.8 × 1.2  
3.3 × 3.3 × 1.4  
3.3 × 3.3 × 1  
135 mΩ  
200 mΩ  
150 mΩ  
94 mΩ  
Coilcraft  
Sumida  
3.2 × 3.2 × 1.55  
CHIP  
KSLI-2520101AG2R2  
LQM31PN2R2M00  
LQM2HPN2R2MJ0  
Hitachi Metals  
Murata  
2.5 × 2 × 1.0  
3.2 × 1.6 × 0.95  
2.5 × 2 × 1.2  
115 mΩ  
220 mΩ  
160 mΩ  
Murata  
9.2.2.4 Output Capacitor Selection  
A ceramic output capacitor of 10 µF, 6.3 V is sufficient for most applications. Use X7R or X5R types; do not use  
Y5V. DC bias characteristics of ceramic capacitors must be considered when selecting case sizes like 0805 and  
0603. DC bias characteristics vary from manufacturer to manufacturer and DC bias curves should be requested  
from them as part of the capacitor selection process.  
The minimum output capacitance to ensure good performance is 5.75 µF at 1.8-V DC bias including tolerances  
and over ambient temperature range. The output filter capacitor smoothes out current flow from the inductor to  
the load, helps maintain a steady output voltage during transient load changes and reduces output voltage ripple.  
These capacitors must be selected with sufficient capacitance and sufficiently low ESR to perform these  
functions.  
The output voltage ripple is caused by the charging and discharging of the output capacitor and by the RESR and  
can be calculated as:  
Voltage peak-to-peak ripple due to capacitance can be expressed as follows:  
IRIPPLE  
=
VPP-C  
4*f*C  
(9)  
Voltage peak-to-peak ripple due to ESR can be expressed as follows:  
VPP-ESR = (2 × IRIPPLE) × RESR  
Because these two components are out of phase the root mean squared (RMS) value can be used to get an  
approximate value of peak-to-peak ripple.  
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The peak-to-peak ripple voltage, rms value can be expressed as follow:  
2
VPP-RMS  
=
VPP-C2 + VPP-ESR  
(10)  
The output voltage ripple is dependent on the inductor current ripple and the equivalent series resistance of the  
output capacitor (RESR).  
The RESR is frequency dependent (as well as temperature dependent); make sure the value used for calculations  
is at the switching frequency of the device.  
Table 4. Suggested Capacitors and Their Suppliers  
MODEL  
4.7 µF for CIN  
TYPE  
VENDOR  
VOLTAGE RATING  
CASE SIZE inch (mm)  
C2012X5R0J475K  
JMK212BJ475K  
Ceramic, X5R  
Ceramic, X5R  
Ceramic, X5R  
Ceramic, X5R  
TDK  
Taiyo-Yuden  
Murata  
6.3 V  
6.3 V  
6.3 V  
6.3 V  
0805 (2012)  
0805 (2012)  
0805 (2012)  
0603 (1608)  
GRM21BR60J475K  
C1608X5R0J475K  
TDK  
10 µF for COUT  
GRM21BR60J106K  
JMK212BJ106K  
Ceramic, X5R  
Ceramic, X5R  
Ceramic, X5R  
Ceramic, X5R  
Murata  
Taiyo-Yuden  
TDK  
6.3 V  
6.3 V  
6.3 V  
6.3 V  
0805 (2012)  
0805 (2012)  
0805 (2012)  
0603 (1608)  
C2012X5R0J106K  
C1608X5R0J106K  
TDK  
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9.2.3 Application Curves  
VOUT = 1.2 V  
L = 2.2 µH  
DCR = 200 mΩ  
VOUT = 1.5 V  
L = 2.2 µH  
DCR = 200 mΩ  
Figure 19. Efficiency vs. Output Current)  
Figure 20. Efficiency vs. Output Current  
VOUT = 1.8 V  
L = 2.2 µH  
DCR = 200 mΩ  
VOUT-ADJ = 1.1 V  
L= 2.2 µH  
DCR = 200 mΩ  
Figure 21. Efficiency vs. Output Current  
Figure 22. Efficiency vs. Output Current  
VOUT = 1.5 V (PWM Mode)  
VOUT-ADJ = 3.3 V  
L= 2.2 µH  
DCR = 200 mΩ  
Figure 24. Line Transient Response  
Figure 23. Efficiency vs. Output Current  
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VOUT = 1.5 V (PWM Mode)  
Figure 25. Load Transient Response  
VOUT = 1.5 V  
PFM Mode 0.5 mA to 50 mA  
Figure 26. Load Transient Response  
VOUT = 1.5 V  
PFM Mode 0.5 mA to 50 mA  
Figure 27. Load Transient Response  
10 Power Supply Recommendations  
The LM3673 requires a single supply input voltage. This voltage can range between 2.7 V to 5.5 V and must be  
able to supply enough current for a given application.  
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11 Layout  
11.1 Layout Guidelines  
PC board layout is an important part of DC-DC converter design. Poor board layout can disrupt the performance  
of a DC-DC converter and surrounding circuitry by contributing to EMI, ground bounce, and resistive voltage loss  
in the traces. These can send erroneous signals to the DC-DC converter device, resulting in poor regulation or  
instability.  
Good layout for the LM3673 can be implemented by following a few simple design rules below. Refer to  
Figure 28 for top layer board layout.  
1. Place the LM3673, inductor and filter capacitors close together and make the traces short. The traces  
between these components carry relatively high switching currents and act as antennas. Following this rule  
reduces radiated noise. Special care must be given to place the input filter capacitor very close to the VIN  
and GND pins.  
2. Arrange the components so that the switching current loops curl in the same direction. During the first half of  
each cycle, current flows from the input filter capacitor through the LM3673 and inductor to the output filter  
capacitor and back through ground, forming a current loop. In the second half of each cycle, current is pulled  
up from ground through the LM3673 by the inductor to the output filter capacitor and then back through  
ground forming a second current loop. Routing these loops so the current curls in the same direction  
prevents magnetic field reversal between the two half-cycles and reduces radiated noise.  
3. Connect the ground pins of the LM3673 and filter capacitors together using generous component-side  
copper fill as a pseudo-ground plane. Then, connect this to the ground-plane (if one is used) with several  
vias. This reduces ground-plane noise by preventing the switching currents from circulating through the  
ground plane. It also reduces ground bounce at the LM3673 by giving it a low-impedance ground connection.  
4. Use wide traces between the power components and for power connections to the DC-DC converter circuit.  
This reduces voltage errors caused by resistive losses across the traces.  
5. Route noise sensitive traces, such as the voltage feedback path, away from noisy traces between the power  
components. The voltage feedback trace must remain close to the LM3673 circuit and must be direct, but  
routed opposite to noisy components. This reduces EMI radiated onto the own voltage feedback trace of the  
DC-DC converter. A good approach is to route the feedback trace on another layer and to have a ground  
plane between the top layer and layer on which the feedback trace is routed. For the adjustable device  
option, it is also best to have the feedback dividers on the bottom layer.  
6. Place noise sensitive circuitry, such as radio IF blocks, away from the DC-DC converter, CMOS digital blocks  
and other noisy circuitry. Interference with noise-sensitive circuitry in the system can be reduced through  
distance.  
In mobile phones, for example, a common practice is to place the DC-DC converter on one corner of the board,  
arrange the CMOS digital circuitry around it (because this also generates noise), and then place sensitive  
preamplifiers and IF stages on the diagonally opposing corner. Often, the sensitive circuitry is shielded with a  
metal pan and power to it is post-regulated to reduce conducted noise, using low-dropout linear regulators.  
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11.2 Layout Example  
Figure 28. LM3673 DSBGA Top Layer Board Layout  
11.3 DSBGA Package Assembly and Use  
Use of the DSBGA package requires specialized board layout, precision mounting and careful re-flow  
techniques, as detailed in Texas Instruments Application Note 1112 DSBGA Wafer Level Chip Scale Package  
(SNVA009). Refer to the section Surface Mount Technology (SMD) Assembly Considerations. For best results in  
assembly, alignment ordinals on the PC board must be used to facilitate placement of the device. The pad style  
used with DSBGA package must be the NSMD (non-solder mask defined) type. This means that the solder-mask  
opening is larger than the pad size. This prevents a lip that otherwise forms if the solder-mask and pad overlap,  
from holding the device off the surface of the board and interfering with mounting. See Application Note 1112  
(SNVA009) for specific instructions how to do this. The 5-pin package used for LM3673 has 300-micron solder  
balls and requires 10.82 mils pads for mounting on the circuit board. The trace to each pad must enter the pad  
with a 90° entry angle to prevent debris from being caught in deep corners. Initially, the trace to each pad must  
be 7 mil wide, for a section approximately 7 mil long or longer, as a thermal relief. Then each trace must neck up  
or down to its optimal width. The important criteria is symmetry. This ensures the solder bumps on the LM3673  
re-flow evenly and that the device solders level to the board. In particular, special attention must be paid to the  
pads for bumps A1 and A3, because VIN and GND are typically connected to large copper planes, inadequate  
thermal relief can result in late or inadequate re-flow of these bumps.  
The DSBGA package is optimized for the smallest possible size in applications with red or infrared opaque  
cases. Because the DSBGA package lacks the plastic encapsulation characteristic of larger devices, it is  
vulnerable to light. Backside metallization and/or epoxy coating, along with front-side shading by the printed  
circuit board, reduce this sensitivity. However, the package has exposed die edges. In particular, DSBGA  
devices are sensitive to light, in the red and infrared range, shining on the package’s exposed die edges.  
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12 Device and Documentation Support  
12.1 Device Support  
12.1.1 Third-Party Products Disclaimer  
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT  
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES  
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER  
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.  
12.2 Documentation Support  
12.2.1 Related Documentation  
For further information, see the following:  
TI Application Note DSBGA Wafer Level Chip Scale Package (SNVA009)  
12.3 Community Resources  
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective  
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of  
Use.  
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration  
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help  
solve problems with fellow engineers.  
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and  
contact information for technical support.  
12.4 Trademarks  
E2E is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
12.5 Electrostatic Discharge Caution  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more  
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.  
12.6 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
13 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
22  
Submit Documentation Feedback  
Copyright © 2006–2015, Texas Instruments Incorporated  
Product Folder Links: LM3673  
PACKAGE OPTION ADDENDUM  
www.ti.com  
8-Oct-2015  
PACKAGING INFORMATION  
Orderable Device  
LM3673TL-1.2/NOPB  
LM3673TL-1.5/NOPB  
LM3673TL-1.8/NOPB  
LM3673TL-ADJ/NOPB  
LM3673TLX-1.2/NOPB  
LM3673TLX-1.5/NOPB  
LM3673TLX-1.8/NOPB  
LM3673TLX-ADJ/NOPB  
Status Package Type Package Pins Package  
Eco Plan  
Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
-30 to 85  
-30 to 85  
-30 to 85  
-30 to 85  
-30 to 85  
-30 to 85  
-30 to 85  
-30 to 85  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(6)  
(3)  
(4/5)  
ACTIVE  
DSBGA  
DSBGA  
DSBGA  
DSBGA  
DSBGA  
DSBGA  
DSBGA  
DSBGA  
YZR  
5
5
5
5
5
5
5
5
250  
Green (RoHS  
& no Sb/Br)  
SNAGCU  
SNAGCU  
SNAGCU  
SNAGCU  
SNAGCU  
SNAGCU  
SNAGCU  
SNAGCU  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
1
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
YZR  
YZR  
YZR  
YZR  
YZR  
YZR  
YZR  
250  
250  
Green (RoHS  
& no Sb/Br)  
H
F
R
1
Green (RoHS  
& no Sb/Br)  
250  
Green (RoHS  
& no Sb/Br)  
3000  
3000  
3000  
3000  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
H
F
R
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
8-Oct-2015  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish  
value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
16-Sep-2015  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LM3673TL-1.2/NOPB  
LM3673TL-1.5/NOPB  
LM3673TL-1.8/NOPB  
LM3673TL-ADJ/NOPB  
DSBGA  
DSBGA  
DSBGA  
DSBGA  
YZR  
YZR  
YZR  
YZR  
YZR  
YZR  
YZR  
YZR  
5
5
5
5
5
5
5
5
250  
250  
178.0  
178.0  
178.0  
178.0  
178.0  
178.0  
178.0  
178.0  
8.4  
8.4  
8.4  
8.4  
8.4  
8.4  
8.4  
8.4  
1.14  
1.14  
1.14  
1.14  
1.14  
1.14  
1.14  
1.14  
1.47  
1.47  
1.47  
1.47  
1.47  
1.47  
1.47  
1.47  
0.76  
0.76  
0.76  
0.76  
0.76  
0.76  
0.76  
0.76  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
Q1  
Q1  
Q1  
Q1  
Q1  
Q1  
Q1  
Q1  
250  
250  
LM3673TLX-1.2/NOPB DSBGA  
LM3673TLX-1.5/NOPB DSBGA  
LM3673TLX-1.8/NOPB DSBGA  
LM3673TLX-ADJ/NOPB DSBGA  
3000  
3000  
3000  
3000  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
16-Sep-2015  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LM3673TL-1.2/NOPB  
LM3673TL-1.5/NOPB  
LM3673TL-1.8/NOPB  
LM3673TL-ADJ/NOPB  
LM3673TLX-1.2/NOPB  
LM3673TLX-1.5/NOPB  
LM3673TLX-1.8/NOPB  
LM3673TLX-ADJ/NOPB  
DSBGA  
DSBGA  
DSBGA  
DSBGA  
DSBGA  
DSBGA  
DSBGA  
DSBGA  
YZR  
YZR  
YZR  
YZR  
YZR  
YZR  
YZR  
YZR  
5
5
5
5
5
5
5
5
250  
250  
210.0  
210.0  
210.0  
210.0  
210.0  
210.0  
210.0  
210.0  
185.0  
185.0  
185.0  
185.0  
185.0  
185.0  
185.0  
185.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
250  
250  
3000  
3000  
3000  
3000  
Pack Materials-Page 2  
MECHANICAL DATA  
YZR0005xxx  
D
0.600±0.075  
E
TLA05XXX (Rev C)  
D: Max = 1.413 mm, Min =1.352 mm  
E: Max = 1.083 mm, Min =1.022 mm  
4215043/A  
12/12  
A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994.  
B. This drawing is subject to change without notice.  
NOTES:  
www.ti.com  
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