LM394CH/NOPB [TI]
20mA, 20V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, METAL CAN-6;
| 型号： | LM394CH/NOPB |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 20mA, 20V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, METAL CAN-6 |
| 文件： | 总14页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 1994
LM194/LM394 Supermatch Pair
General Description
The LM194 and LM394 are junction isolated ultra well-
matched monolithic NPN transistor pairs with an order of
magnitude improvement in matching over conventional tran-
sistor pairs. This was accomplished by advanced linear pro-
cessing and a unique new device structure.
matched transistor pair. In many cases, trimming can be
eliminated entirely, improving reliability and decreasing
costs. Additionally, the low noise and high gain make this
device attractive even where matching is not critical.
The LM194 and LM394/LM394B/LM394C are available in
an isolated header 6-lead TO-5 metal can package. The
LM394/LM394B/LM394C are available in an 8-pin plastic
dual-in-line package. The LM194 is identical to the LM394
except for tighter electrical specifications and wider temper-
ature range.
Electrical characteristics of these devices such as drift ver-
sus initial offset voltage, noise, and the exponential relation-
ship of base-emitter voltage to collector current closely ap-
proach those of a theoretical transistor. Extrinsic emitter
and base resistances are much lower than presently avail-
able pairs, either monolithic or discrete, giving extremely low
noise and theoretical operation over a wide current range.
Most parameters are guaranteed over a current range of
1 mA to 1 mA and 0V up to 40V collector-base voltage,
ensuring superior performance in nearly all applications.
Features
Y
Emitter-base voltage matched to 50 mV
Y
Offset voltage drift less than 0.1 mV/ C
§
Y
Current gain (h ) matched to 2%
FE
To guarantee long term stability of matching parameters,
internal clamp diodes have been added across the emitter-
base junction of each transistor. These prevent degradation
due to reverse biased emitter currentÐthe most common
cause of field failures in matched devices. The parasitic iso-
lation junction formed by the diodes also clamps the sub-
strate region to the most negative emitter to ensure com-
plete isolation between devices.
Y
Y
Common-mode rejection ratio greater than 120 dB
Parameters guaranteed over 1 mA to 1 mA collector
current
Y
Y
Extremely low noise
Superior logging characteristics compared to
conventional pairs
Y
Plug-in replacement for presently available devices
The LM194 and LM394 will provide a considerable improve-
ment in performance in most applications requiring a closely
Typical Applications
Low Cost Accurate Square Root Circuit
b
Low Cost Accurate Squaring Circuit
b
6
2
(V )
IN
e
5
e
I
10
I
10
.
10 V
OUT
0
OUT
IN
TL/H/9241–2
TL/H/9241–1
*Trim for full scale accuracy
C
1995 National Semiconductor Corporation
TL/H/9241
RRD-B30M115/Printed in U. S. A.
Absolute Maximum Ratings
g
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
(Note 4)
Base-Emitter Current
Power Dissipation
10 mA
500 mW
Junction Temperature
LM194
LM394/LM394B/LM394C
b
b
a
55 C to 125 C
§
§
25 C to 85 C
Collector Current
20 mA
a
§
65 C to 150 C
§
§
Collector-Emitter Voltage
V
MAX
b
a
Storage Temperature Range
§
Collector-Emitter Voltage
LM394C
35V
20V
Soldering Information
Metal Can Package (10 sec.)
Dual-In-Line Package (10 sec.)
Small Outline Package
Vapor Phase (60 sec.)
Infrared (15 sec.)
260 C
§
Collector-Base Voltage
LM394C
35V
20V
260 C
§
215 C
§
Collector-Substrate Voltage
LM394C
35V
20V
220 C
§
See AN-450 ‘‘Surface Mounting and their Effects on Prod-
uct Reliability’’ for other methods of soldering surface
mount devices.
Collector-Collector Voltage
LM394C
35V
20V
e
Electrical Characteristics (T
25 C)
§
J
LM194
LM394
LM394B/394C
Parameter
Conditions
Units
Min Typ Max Min Typ Max Min Typ Max
e
Current Gain (h
)
FE
V
0V to V
(Note 1)
CB
MAX
e
I
C
I
C
I
C
I
C
1 mA
350 700
350 550
300 450
200 300
300 700
250 550
200 450
150 300
225 500
200 400
150 300
100 200
e
e
e
100 mA
10 mA
1 mA
e
0V to V
Current Gain Match,
V
CB
MAX
e
e
(h Match)
FE
100 DI
I
C
I
C
10 mA to 1 mA
1 mA
0.5
1.0
2
0.5
1.0
4
1.0
2.0
5
%
%
[
] [
]
h
FE(MIN)
B
e
I
C
e
Emitter-Base Offset
Voltage
V
0
CB
e
25
10
5
100
25
25
10
5
150
50
50
10
5
200
100
50
mV
mV
mV
I
1 mA to 1 mA
C
Change in Emitter-Base (Note 1)
e
1 mA to 1 mA,
e
Offset Voltage vs
Collector-Base Voltage
(CMRR)
I
C
V
0V to V
CB
MAX
e
Change in Emitter-Base
Offset Voltage vs
V
CB
0V,
25
50
e
I
1 mA to 0.3 mA
C
Collector Current
e
Emitter-Base Offset
Voltage Temperature
Drift
I
I
10 mA to 1 mA (Note 2)
C
0.08
0.03
0.3
0.1
0.08
0.03
1.0
0.3
0.2
1.5
0.5
mV/ C
§
e
I
C2
C1
V
Trimmed to 0 at 25 C
§
0.03
mV/ C
§
OS
e
Logging Conformity
I
3 nA to 300 mA,
C
150
150
150
mV
e
e
e
V
V
V
0, (Note 3)
CB
CB
CC
Collector-Base Leakage
V
0.05 0.25
0.05
0.1
0.5
5.0
0.05
0.1
0.5
5.0
nA
nA
MAX
MAX
Collector-Collector
Leakage
V
0.1
2.0
e
e
0V,
Input Voltage Noise
I
100 mA, V
CB
C
1.8
1.8
1.8
nV/ Hz
0
e
f
100 Hz to 100 kHz
e
e
e
e
Collector to Emitter
Saturation Voltage
I
I
1 mA, I
1 mA, I
10 mA
0.2
0.1
0.2
0.1
0.2
0.1
V
V
C
B
100 mA
C
B
Note 1: Collector-base voltage is swept from 0 to V
at a collector current of 1 mA, 10 mA, 100 mA, and 1 mA.
MAX
e
25 C is valid only when the ratio of I to I is adjusted to give the initial zero offset. This ratio must be held to
e
Note 2: Offset voltage drift with V
0 at T
A
§
OS
C1
C2
a
within 0.003% over the entire temperature range. Measurements taken at 25 C and temperature extremes.
§
Note 3: Logging conformity is measured by computing the best fit to a true exponential and expressing the error as a base-emitter voltage deviation.
Note 4: Refer to RETS194X drawing of military LM194H version for specifications.
2
Typical Applications (Continued)
e
e
1 mA to 10 nA
Fast, Accurate Logging Amplifier, V
IN
10V to 0.1 mV or I
IN
TL/H/9241–3
a
g
*1 kX ( 1%) at 25 C, 3500 ppm/ C.
§
§
Available from Vishay Ultronix,
Grand Junction, CO, Q81 Series.
V
IN
e b
V
OUT
log
10
V
# J
REF
Voltage Controlled Variable Gain Amplifier
TL/H/9241–4
k
*R8–R10 and D2 provide a temperature Distortion 0.1%
l
Bandwidth 1 MHz
independent gain control.
e b
G
336 V1 (dB)
100 dB gain range
3
Typical Applications (Continued)
Precision Low Drift Operational Amplifier
e 10V
mV
gain
C
TL/H/9241–5
0 pF for A 1000
V
High Accuracy One Quadrant Multiplier/Divider
TL/H/9241–6
(X) (Y)
e
V
; positive inputs only.
OUT
(Z)
*Typical linearity 0.1%
4
Typical Applications (Continued)
High Performance Instrumentation Amplifier
TL/H/9241–7
Performance Characteristics
e
s
t
t
e
s
t
t
e
e
100 G
G
10,000 G
1,000 G
10
s
0.05
s
g
Linearity of Gain ( 10V Output)
0.01
0.01
0.02
%
dB
dB
t
t
Common-Mode Rejection Ratio (60 Hz)
Common-Mode Rejection Ratio (1 kHz)
Power Supply Rejection Ratio
120
110
120
110
110
90
70
t
t
90
l
l
l
l
l
l
90
50
l
110
a
b
Supply
Supply
110
110
110
110
110
dB
dB
l
70
50
0.3
b
Bandwidth ( 3 dB)
Slew Rate
50
50
kHz
0.3
0.3
s
l
0.3
2
l
V/ms
s
l
s
10 mV/ C
Offset Voltage Drift**
Common-Mode Input Resistance
Differential Input Resistance
0.25
9
0.4
9
§
9
10
9
10
l
10
10
X
8
8
8
l
8
l
l
l
3 x 10
3 x 10
6
3 x 10
12
3 x 10
70
X
nV
s
s
10 kHz)
Input Referred Noise (100 Hz
f
5
Hz
0
Input Bias Current
Input Offset Current
Common-Mode Range
e
75
75
75
75
nA
nA
V
1.5
1.5
1.5
1.5
g
g
g
g
g
g
g
g
11
13
11
13
11
13
10
13
Output Swing (R
10 kX)
V
L
s
**Assumes
5 ppm/ C tracking of resistors
§
5
Typical Performance Characteristics
Small Signal Current Gain vs
Collector Current
Unity Gain Frequency (f ) vs
t
Collector Current
DC Current Gain vs Temperature
TL/H/9241–8
6
Typical Performance Characteristics (Continued)
Collector to Collector Capacitance
vs Collector-Substrate Voltage
Emitter-Base Capacitance vs
Reverse Bias Voltage
Collector-Base Capacitance vs
Reverse Bias Voltage
ure
TL/H/9241–9
Emitter-Base Log Conformity
TL/H/9241–10
Low Frequency Noise of Differential Pair*
TL/H/9241–11
*Unit must be in still air environment so that differential
lead temperature is held to less than 0.0003 C.
§
7
Connection Diagrams
Metal Can Package
Dual-In-Line and Small Outline Packages
TL/H/9241–12
TL/H/9241–13
Top View
Top View
Order Number LM194H/883*,
LM394H, LM394BH or LM394CH
See NS Package Number H06C
Order Number LM394N or LM394CN
See NS Package Number N08E
Ý
*Available per SMD 5962-8777701
8
Physical Dimensions inches (millimeters)
Metal Can Package (H)
Order Number LM194H/883, LM394H, LM394BH or LM394CH
NS Package Number H06C
9
Physical Dimensions inches (millimeters) (Continued)
Molded Dual-In-Line Package (N)
Order Number LM394CN or LM394N
NS Package Number N08E
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Products > Analog - Other > General Purpose > Arrays > LM194
Product Folder
LM194
SuperMatch Pair
Generic P/N 194
Contents
l
l
l
l
General Description
Features
Datasheet
Package Availability, Models, Samples
& Pricing
l
l
Design Tools
Application Notes
General Description
The LM194 and LM394 are junction isolated ultra well-matched monolithic NPN transistor
pairs with an order of magnitude improvement in matching over conventional transistor
pairs. This was accomplished by advanced linear processing and a unique new device
structure.
Electrical characteristics of these devices such as drift versus initial offset voltage, noise,
and the exponential relationship of base-emitter voltage to collector current closely approach
those of a theoretical transistor. Extrinsic emitter and base resistances are much lower than
presently available pairs, either monolithic or discrete, giving extremely low noise and
theoretical operation over a wide current range. Most parameters are guaranteed over a
current range of 1 µA to 1 mA and 0V up to 40V collector-base voltage, ensuring superior
performance in nearly all applications.
To guarantee long term stability of matching parameters, internal clamp diodes have been
added across the emitter-base junction of each transistor. These prevent degradation due to
reverse biased emitter current-the most common cause of field failures in matched devices.
The parasitic isolation junction formed by the diodes also clamps the substrate region to the
most negative emitter to ensure complete isolation between devices.
The LM194 and LM394 will provide a considerable improvement in performance in most
applications requiring a closely matched transistor pair. In many cases, trimming can be
eliminated entirely, improving reliability and decreasing costs. Additionally, the low noise
and high gain make this device attractive even where matching is not critical.
The LM194 and LM394/LM394B/LM394C are available in an isolated header 6-lead TO-5
metal can package. The LM394/LM394B/LM394C are available in an 8-pin plastic dual-in-
line package. The LM194 is identical to the LM394 except for tighter electrical
specifications and wider temperature range.
Features
l
l
l
Emitter-base voltage matched to 50 µV
Offset voltage drift less than 0.1 µV/°C
Current gain (h ) matched to 2%
FE
l
l
l
l
l
Common-mode rejection ratio greater than 120 dB
Parameters guaranteed over 1 µA to 1 mA collector current
Extremely low noise
Superior logging characteristics compared to conventional pairs
Plug-in replacement for presently available devices
Datasheet
Size
(in Kbytes)
Title
LM194/LM394 Supermatch Pair
Date
Receive via Email
Download
View Online
221 Kbytes 7-Jan-96 View Online Download Receive via Email
LM194 Mil-Aero Datasheet MNLM194-X 11 Kbytes
View Online Download Receive via Email
Please use Adobe Acrobat to view PDF file(s).
If you have trouble printing, see Printing Problems.
Package Availability, Models, Samples & Pricing
Samples
Package
Models
Budgetary Pricing
Quantity $US each
Std
Pack
Size
&
Package
Marking
Part Number
Status
Electronic
Orders
Type # pins
SPICE IBIS
tray
$15.8000 of
[logo]¢Z¢S¢4¢A$E5962
-8777701XA LM194H/Q¢M
5962-8777701XA TO-5
6
Full production N/A N/A
.
.
50+
50
LM194 MDS
die
Preliminary
N/A N/A
N/A
-
Design Tools
Size
(in Kbytes)
Title
Date
Receive via Email
Download
View Online
Amplifiers Selection Guide software for Windows 8 Kbytes
31-Aug-2000
View
Please use Adobe Acrobat to view PDF file(s).
If you have trouble printing, see Printing Problems.
Application Notes
Size
(in
Kbytes)
Title
Date
Receive via
Email
View
Online
Download
Download
Download
AN-222: Application Note 222 Super Matched Bipolar Transistor Pair Sets New
399
Kbytes
24-Feb- View
99 Online
28-Jun- View
Receive via
Email
Standards for Drift and Noise
Receive via
Email
LB-21: Instrumentational Amplifiers
61 Kbytes
96
Online
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[Information as of 1-Sep-2000]
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相关型号：
LM394H/NOPB
TRANSISTOR 20 mA, 35 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, METAL CAN-6, BIP General Purpose Small Signal
TI
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