LM4879 [TI]
1.1 Watt Audio Power Amplifier;
| 型号： | LM4879 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 1.1 Watt Audio Power Amplifier |
| 文件： | 总32页 (文件大小：1754K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM4879, LM4879MMBD, LM4879SDBD
www.ti.com
SNAS142G –SEPTEMBER 2001–REVISED MAY 2013
LM4879
1.1 Watt Audio Power Amplifier
Check for Samples: LM4879, LM4879MMBD, LM4879SDBD
1
FEATURES
DESCRIPTION
The LM4879 is an audio power amplifier primarily
designed for demanding applications in mobile
phones and other portable communication device
applications. It is capable of delivering 1.1 watt of
continuous average power to an 8Ω BTL load with
less than 1% distortion (THD+N) from a 5VDC power
supply.
23
•
No Output Coupling Capacitors, Snubber
Networks or Bootstrap Capacitors Required
•
•
•
Unity Gain Stable
Ultra Low Current Shutdown Mode
Fast Turn On: 80ms (typ), 110ms (max) with
1.0µF Capacitor
Boomer™ audio power amplifiers were designed
specifically to provide high quality output power with a
minimal amount of external components. The
LM4879 does not require output coupling capacitors
or bootstrap capacitors, and therefore is ideally suited
for lower-power portable applications where minimal
space and power consumption are primary
requirements.
•
•
BTL Output Can Drive Capacitive Loads up to
100pF
Advanced Pop and Click Circuitry Eliminates
Noises During Turn-On and Turn-Off
Transitions
•
•
2.2V - 5.0V Operation
Available in Space-Saving DSBGA, WSON, and
VSSOP Packages
The LM4879 features a low-power consumption
global shutdown mode, which is achieved by driving
the shutdown pin with logic low. Additionally, the
LM4879 features an internal thermal shutdown
protection mechanism.
APPLICATIONS
•
•
•
Mobile Phones
PDAs
The LM4879 contains advanced pop and click
circuitry which eliminates noises which would
otherwise occur during turn-on and turn-off
transitions.
Portable electronic devices
KEY SPECIFICATIONS
•
•
•
•
PSRR: 5V, 3V at 217Hz: 62dB (typ)
The LM4879 is unity-gain stable and can be
configured by external gain-setting resistors.
Power Output at 5V, 1%THD+N: 1.1W (typ)
Power Output at 3V, 1%THD+N: 350mW (typ)
Shutdown Current: 0.1µA (typ)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
3
Boomer is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2001–2013, Texas Instruments Incorporated
LM4879, LM4879MMBD, LM4879SDBD
SNAS142G –SEPTEMBER 2001–REVISED MAY 2013
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TYPICAL APPLICATION
Figure 1. Typical Audio Amplifier Application Circuit
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SNAS142G –SEPTEMBER 2001–REVISED MAY 2013
CONNECTION DIAGRAMS
Top View
Top View
Figure 2. 8 Bump DSBGA Package
See Package Number YPB0008
Figure 3. VSSOP Package
See Package Number DGS0010A
NC = No Connect
Top View
Top View
Figure 4. 9 Bump DSBGA Package
See package Number BLA09AAB
Figure 5. 9 Bump DSBGA Package
See package Number YZR0009AAA
Top View
Vo
2
SHUTDOWN
BYPASS
+IN
1
2
3
4
8
GN
D
7
6
5
V
DD
Vo
1
-IN
Figure 6. WSON Package
See Package Number NGT0008A
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS(1)(2)
Supply Voltage(3)
6.0V
−65°C to +150°C
−0.3V to VDD +0.3V
Internally Limited
2000V
Storage Temperature
Input Voltage
Power Dissipation(4)(5)
ESD Susceptibility(6)
ESD Susceptibility(7)
Junction Temperature
200V
150°C
θJA (YPB0008)
220°C/W(8)
64°C/W(9)
180°C/W(8)
180°C/W(8)
56°C/W
θJA (NGT0008A)
θJA (YZR0009AAA)
θJA (BLA09AAB)
θJC (DGS0010A)
θJA (DGS0010A)
Thermal Resistance
190°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(3) If the product is in shutdown mode, and VDD exceeds 6V (to a max of 8V VDD), then most of the excess current will flow through the
ESD protection circuits. If the source impedance limits the current to a max of 10ma, then the part will be protected. If the part is
enabled when VDD is above 6V, circuit performance will be curtailed or the part may be permanently damaged.
(4) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature
TA. The maximum allowable power dissipation is PDMAX = (TJMAX–TA)/θJA or the number given in Absolute Maximum Ratings, whichever
is lower. For the LM4879, see power derating curves for additional information.
(5) Maximum power dissipation (PDMAX) in the device occurs at an output power level significantly below full output power. PDMAX can be
calculated using Equation 2 shown in the APPLICATION INFORMATION section. It may also be obtained from the power dissipation
graphs.
(6) Human body model, 100pF discharged through a 1.5kΩ resistor.
(7) Machine Model, 220pF–240pF discharged through all pins.
(8) All bumps have the same thermal resistance and contribute equally when used to lower thermal resistance.
(9) The stated θJA is achieved when the WSON package's DAP is soldered to a 4in2 copper heatsink plain.
OPERATING RATINGS
Temperature Range TMIN ≤ TA ≤ TMAX
−40°C ≤ TA ≤ 85°C
2.2V ≤ VDD ≤ 5.5V
Supply Voltage
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ELECTRICAL CHARACTERISTICS VDD = 5V(1)(2)
The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25°C.
LM4879
Limit(4)(5)
Units
(Limits)
Parameter
Test Conditions
Typ(3)
5
IDD
Quiescent Power Supply Current VIN = 0V, 8Ω BTL
10
2.0
40
mA (max)
µA (max)
mV (max)
W (min)
%
ISD
Shutdown Current
Vshutdown = GND
0.1
5
VOS
Po
Output Offset Voltage
Output Power
THD+N = 1% (max); f = 1kHz
Po = 0.4Wrms; f = 1kHz
1.1
0.1
0.9
THD+N
Total Harmonic Distortion+Noise
Vripple = 200mVsine p-p, CB = 1.0µF
Input terminated with 10Ω to ground
68 (f = 1kHz)
62 (f = 217Hz)
PSRR
Power Supply Rejection Ratio
55
dB (min)
VSDIH
VSDIL
TWU
Shutdown High Input Voltage
Shutdown Low Input Voltage
Wake-up Time
1.4
0.4
110
V (min)
V (max)
ms (max)
CB = 1.0µF
80
26
A-Weighted; Measured across 8Ω BTL
Input terminated with 10Ω to ground
NOUT
Output Noise
µVRMS
(1) All voltages are measured with respect to the ground pin, unless otherwise specified.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(3) Typicals are measured at 25°C and represent the parametric norm.
(4) Limits are specified to TI's AOQL (Average Outgoing Quality Level).
(5) For DSBGA only, shutdown current is measured in a Normal Room Environment. Exposure to direct sunlight will increase ISD by a
maximum of 2µA.
ELECTRICAL CHARACTERISTICS VDD = 3.0V(1)(2)
The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25°C.
LM4879
Limit(4)(5)
Units
(Limits)
Parameter
Test Conditions
Typ(3)
4.5
IDD
Quiescent Power Supply Current
Shutdown Current
VIN = 0V, 8Ω BTL
9
mA (max)
µA (max)
mV (max)
mW
ISD
Vshutdown = GND
0.1
2.0
40
VOS
Po
Output Offset Voltage
Output Power
5
THD+N = 1% (max); f = 1kHz
Po = 0.15Wrms; f = 1kHz
350
0.1
320
THD+N
Total Harmonic Distortion+Noise
%
Vripple = 200mVsine p-p, CB = 1.0µF
Input terminated with 10Ω to ground
68 (f = 1kHz)
62 (f = 217Hz)
PSRR
Power Supply Rejection Ratio
55
dB (min)
VSDIH
VSDIL
TWU
Shutdown High Input Voltage
Shutdown Low Input Voltage
Wake-up Time
1.4
0.4
110
V (min)
V (max)
ms (max)
CB = 1.0µF
80
26
A-Weighted; Measured across 8Ω
BTL
NOUT
Output Noise
µVRMS
Input terminated with 10Ω to ground
(1) All voltages are measured with respect to the ground pin, unless otherwise specified.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(3) Typicals are measured at 25°C and represent the parametric norm.
(4) Limits are specified to TI's AOQL (Average Outgoing Quality Level).
(5) For DSBGA only, shutdown current is measured in a Normal Room Environment. Exposure to direct sunlight will increase ISD by a
maximum of 2µA.
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ELECTRICAL CHARACTERISTICS VDD = 2.6V(1)(2)
The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25°C.
LM4879
Limit(4)(5)
Units
(Limits)
Parameter
Test Conditions
Typ(3)
3.5
IDD
ISD
Quiescent Power Supply Current
Shutdown Current
VIN = 0V, 8Ω BTL
mA
µA
Vshutdown = GND
0.1
VOS
Output Offset Voltage
5
mV
THD+N = 1% (max); f = 1kHz
RL = 8Ω
Po
Output Power
250
350
0.1
mW
RL = 4Ω
THD+N
PSRR
Total Harmonic Distortion+Noise
Power Supply Rejection Ratio
Po = 0.1Wrms; f = 1kHz
%
Vripple = 200mVsine p-p, CB = 1.0µF
Input terminated with 10Ω to ground
55 (f = 1kHz)
55 (f = 217Hz)
dB
(1) All voltages are measured with respect to the ground pin, unless otherwise specified.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(3) Typicals are measured at 25°C and represent the parametric norm.
(4) Limits are specified to TI's AOQL (Average Outgoing Quality Level).
(5) For DSBGA only, shutdown current is measured in a Normal Room Environment. Exposure to direct sunlight will increase ISD by a
maximum of 2µA.
EXTERNAL COMPONENTS DESCRIPTION
(See Figure 1)
Components
Functional Description
1.
Ri
Inverting input resistance which sets the closed-loop gain in conjunction with Rf. This resistor also forms a high pass
filter with Ci at fC= 1/(2π RiCi).
2.
Ci
Input coupling capacitor which blocks the DC voltage at the amplifiers input terminals. Also creates a highpass filter with
Ri at fc = 1/(2π RiCi). Refer to the section, PROPER SELECTION OF EXTERNAL COMPONENTS, for an explanation
of how to determine the value of Ci.
3.
4.
Rf
Feedback resistance which sets the closed-loop gain in conjunction with Ri.
CS
Supply bypass capacitor which provides power supply filtering. Refer to the POWER SUPPLY BYPASSING section for
information concerning proper placement and selection of the supply bypass capacitor.
5.
CB
Bypass pin capacitor which provides half-supply filtering. Refer to the section, PROPER SELECTION OF EXTERNAL
COMPONENTS, for information concerning proper placement and selection of CB.
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TYPICAL PERFORMANCE CHARACTERISTICS
THD+N vs Frequency
VDD = 5V, RL = 8Ω, PWR = 250mW
THD+N vs Frequency
VDD = 3V, RL = 8Ω, PWR = 150mW
Figure 7.
Figure 8.
THD+N vs Frequency
VDD = 2.6V, RL = 8Ω, PWR = 100mW
THD+N vs Frequency
VDD = 2.6V, RL = 4Ω, PWR = 100mW
Figure 9.
Figure 10.
THD+N vs Power Out
VDD = 5V, RL = 8Ω, f = 1kHz
THD+N vs Power Out
VDD = 3V, RL = 8Ω, f = 1kHz
Figure 11.
Figure 12.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
THD+N vs Power Out
VDD = 2.6V, RL = 8Ω, f = 1kHz
THD+N vs Power Out
VDD = 2.6V, RL = 4Ω, f = 1kHz
Figure 13.
Figure 14.
Power Supply Rejection Ratio
VDD = 5V
Power Supply Rejection Ratio
VDD = 3V
Figure 15.
Figure 16.
Power Dissipation
vs Output Power
VDD = 5V
Power Supply Rejection Ratio
VDD = 2.6V
Figure 17.
Figure 18.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Power Dissipation
vs Output Power
VDD = 3V
Power Dissipation
vs Output Power
VDD = 2.6V
Figure 19.
Figure 20.
Power Dissipation
vs Output Power (LLP Package)
VDD = 5V
Power Derating - MSOP
PDMAX = 670mW
VDD = 5V, RL = 8Ω
1.4
1.2
R
L
= 4W
1.0
0.8
0.6
0.4
0.2
R
= 8W
L
V
= 5V
DD
f = 1 kHz
THD + N Ç 1%
BW < 80 kHz
0
0
0.4
0.8
1.2
1.6
2
OUTPUT POWER (W)
Figure 21.
Figure 22.
Power Derating - 8 Bump µSMD
PDMAX = 670mW
Power Derating - 9 Bump µSMD
PDMAX = 670mW
VDD = 5V, RL = 8Ω
VDD = 5V, RL = 8Ω
Figure 23.
Figure 24.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Power Derating - LLP
PDMAX = 670mV
Output Power
vs Supply Voltage
VDD = 5V, RL = 8
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2
4 in Heatsink Area
No
Heatsink
2
2 in Heatsink Area
2
1 in Heatsink Area
0
20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE (èC)
Figure 25.
Figure 26.
Output Power
vs Supply Voltage
Output Power
vs Load Resistance
Figure 27.
Figure 28.
Clipping (Dropout) Voltage
vs Supply Voltage
Supply Current
Shutdown Voltage
Figure 29.
Figure 30.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Shutdown Hysterisis Voltage
VDD = 5V
Shutdown Hysterisis Voltage
VDD = 3V
Figure 31.
Figure 32.
Shutdown Hysterisis Voltage
VDD = 2.6V
Open Loop
Frequency Response
Figure 33.
Figure 34.
Frequency Response
vs Input Capacitor Size
Figure 35.
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APPLICATION INFORMATION
BRIDGE CONFIGURATION EXPLANATION
As shown in Figure 1, the LM4879 has two operational amplifiers internally, allowing for a few different amplifier
configurations. The first amplifier's gain is externally configurable, while the second amplifier is internally fixed in
a unity-gain, inverting configuration. The closed-loop gain of the first amplifier is set by selecting the ratio of Rf to
Ri while the second amplifier's gain is fixed by the two internal 20 kΩ resistors. Figure 1 shows that the output of
amplifier one serves as the input to amplifier two which results in both amplifiers producing signals identical in
magnitude, but out of phase by 180°. Consequently, the differential gain for the IC is
AVD = 2 *(Rf/Ri)
(1)
By driving the load differentially through outputs Vo1 and Vo2, an amplifier configuration commonly referred to as
“bridged mode” is established. Bridged mode operation is different from the classical single-ended amplifier
configuration where one side of the load is connected to ground.
A bridge amplifier design has a few distinct advantages over the single-ended configuration, as it provides
differential drive to the load, thus doubling output swing for a specified supply voltage. Four times the output
power is possible as compared to a single-ended amplifier under the same conditions. This increase in attainable
output power assumes that the amplifier is not current limited or clipped. In order to choose an amplifier's closed-
loop gain without causing excessive clipping, please refer to the AUDIO POWER AMPLIFIER DESIGN section.
A bridge configuration, such as the one used in LM4879, also creates a second advantage over single-ended
amplifiers. Since the differential outputs, Vo1 and Vo2, are biased at half-supply, no net DC voltage exists across
the load. This eliminates the need for an output coupling capacitor which is required in a single supply, single-
ended amplifier configuration. Without an output coupling capacitor, the half-supply bias across the load would
result in both increased internal IC power dissipation and also possible loudspeaker damage.
POWER DISSIPATION
Power dissipation is a major concern when designing a successful amplifier, whether the amplifier is bridged or
single-ended. A direct consequence of the increased power delivered to the load by a bridge amplifier is an
increase in internal power dissipation. Since the LM4879 has two operational amplifiers in one package, the
maximum internal power dissipation is 4 times that of a single-ended amplifier. The maximum power dissipation
for a given application can be derived from the power dissipation graphs or from Equation 2.
PDMAX = 4*(VDD)2/(2π2RL)
(2)
It is critical that the maximum junction temperature (TJMAX) of 150°C is not exceeded. TJMAX can be determined
from the power derating curves by using PDMAX and the PC board foil area. By adding additional copper foil, the
thermal resistance of the application can be reduced from a free air value of 150°C/W, resulting in higher PDMAX
Additional copper foil can be added to any of the leads connected to the LM4879. It is especially effective when
connected to VDD, GND, and the output pins. Refer to the application information on the LM4879 reference
design board for an example of good heat sinking. If TJMAX still exceeds 150°C, then additional changes must be
made. These changes can include reduced supply voltage, higher load impedance, or reduced ambient
temperature. Internal power dissipation is a function of output power. Refer to the TYPICAL PERFORMANCE
CHARACTERISTICS curves for power dissipation information for different output powers and output loading.
.
POWER SUPPLY BYPASSING
As with any amplifier, proper supply bypassing is critical for low noise performance and high power supply
rejection. The capacitor location on both the bypass and power supply pins should be as close to the device as
possible. Typical applications employ a 5V regulator with 10 µF tantalum or electrolytic capacitor and a ceramic
bypass capacitor which aid in supply stability. This does not eliminate the need for bypassing the supply nodes of
the LM4879. The selection of a bypass capacitor, especially CB, is dependent upon PSRR requirements, click
and pop performance (as explained in the section, PROPER SELECTION OF EXTERNAL COMPONENTS),
system cost, and size constraints.
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SHUTDOWN FUNCTION
In order to reduce power consumption while not in use, the LM4879 contains a shutdown pin to externally turn off
the amplifier's bias circuitry. This shutdown feature turns the amplifier off when a logic low is placed on the
shutdown pin. By switching the shutdown pin to ground, the LM4879 supply current draw will be minimized in idle
mode. While the device will be disabled with shutdown pin voltages less than 0.4VDC, the idle current may be
greater than the typical value of 0.1µA. (Idle current is measured with the shutdown pin tied to ground).
In many applications, a microcontroller or microprocessor output is used to control the shutdown circuitry to
provide a quick, smooth transition into shutdown. Another solution is to use a single-pole, single-throw switch in
conjunction with an external pull-up resistor. When the switch is closed, the shutdown pin is connected to ground
which disables the amplifier. If the switch is open, then the external pull-up resistor to VDD will enable the
LM4879. This scheme ensures that the shutdown pin will not float thus preventing unwanted state changes.
PROPER SELECTION OF EXTERNAL COMPONENTS
Proper selection of external components in applications using integrated power amplifiers is critical to optimize
device and system performance. While the LM4879 is tolerant of external component combinations,
consideration to component values must be used to maximize overall system quality.
The LM4879 is unity-gain stable which gives the designer maximum system flexibility. The LM4879 should be
used in low gain configurations to minimize THD+N values, and maximize the signal to noise ratio. Low gain
configurations require large input signals to obtain a given output power. Input signals equal to or greater than 1
Vrms are available from sources such as audio codecs. Please refer to the section, AUDIO POWER AMPLIFIER
DESIGN, for a more complete explanation of proper gain selection.
Besides gain, one of the major considerations is the closed-loop bandwidth of the amplifier. To a large extent, the
bandwidth is dictated by the choice of external components shown in Figure 1. The input coupling capacitor, Ci,
forms a first order high pass filter which limits low frequency response. This value should be chosen based on
needed frequency response for a few distinct reasons.
SELECTION OF INPUT CAPACITOR SIZE
Large input capacitors are both expensive and space hungry for portable designs. Clearly, a certain sized
capacitor is needed to couple in low frequencies without severe attenuation. But in many cases the speakers
used in portable systems, whether internal or external, have little ability to reproduce signals below 100 Hz to
150 Hz. Thus, using a large input capacitor may not increase actual system performance.
In addition to system cost and size, click and pop performance is effected by the size of the input coupling
capacitor, Ci. A larger input coupling capacitor requires more charge to reach its quiescent DC voltage (nominally
1/2 VDD). This charge comes from the output via the feedback and is apt to create pops upon device enable.
Thus, by minimizing the capacitor size based on necessary low frequency response, turn-on pops can be
minimized.
Besides minimizing the input capacitor size, careful consideration should be paid to the bypass capacitor value.
Bypass capacitor, CB, is the most critical component to minimize turn-on pops since it determines how fast the
LM4879 turns on. The slower the LM4879's outputs ramp to their quiescent DC voltage (nominally 1/2 VDD), the
smaller the turn-on pop. Choosing CB equal to 1.0 µF along with a small value of Ci (in the range of 0.1 µF to
0.39 µF), should produce a virtually clickless and popless shutdown function. While the device will function
properly, (no oscillations or motorboating), with CB equal to 0.1 µF, the device will be much more susceptible to
turn-on clicks and pops. Thus, a value of CB equal to 1.0 µF is recommended in all but the most cost sensitive
designs.
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AUDIO POWER AMPLIFIER DESIGN
A 1W/8Ω AUDIO AMPLIFIER
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Given:
Power Output
Load Impedance
Input Level
1 Wrms
8Ω
1 Vrms
Input Impedance
Bandwidth
20 kΩ
100 Hz–20 kHz ± 0.25 dB
A designer must first determine the minimum supply rail to obtain the specified output power. By extrapolating
from the Output Power vs Supply Voltage graphs in the TYPICAL PERFORMANCE CHARACTERISTICS
section, the supply rail can be easily found. A second way to determine the minimum supply rail is to calculate
the required Vopeak using Equation 3 and add the output voltage. Using this method, the minimum supply voltage
would be (Vopeak + (VOD + VODBOT)), where V
and VOD are extrapolated from the Dropout Voltage vs
TOP
BOT
OD
TOP
Supply Voltage curve in the TYPICAL PERFORMANCE CHARACTERISTICS section.
(3)
5V is a standard voltage, in most applications, chosen for the supply rail. Extra supply voltage creates headroom
that allows the LM4879 to reproduce peaks in excess of 1W without producing audible distortion. At this time, the
designer must make sure that the power supply choice along with the output impedance does not violate the
conditions explained in the POWER DISSIPATION section.
Once the power dissipation equations have been addressed, the required differential gain can be determined
from Equation 4.
(4)
AVD = (Rf/Ri) 2
(5)
From Equation 4, the minimum AVD is 2.83; use AVD = 3.
Since the desired input impedance was 20 kΩ, and with a AVD of 3, a ratio of 1.5:1 of Rf to Ri results in an
allocation of Ri = 20 kΩ and Rf = 30 kΩ. The final design step is to address the bandwidth requirements which
must be stated as a pair of −3 dB frequency points. Five times away from a −3 dB point is 0.17 dB down from
passband response which is better than the required ±0.25 dB specified.
fL = 100 Hz/5 = 20 Hz
fH = 20 kHz * 5 = 100 kHz
As stated in the EXTERNAL COMPONENTS DESCRIPTION section, Ri in conjunction with Ci create a high pass
filter.
Ci ≥ 1/(2π*20 kΩ*20 Hz) = 0.397 µF; use 0.39 µF
The high frequency pole is determined by the product of the desired frequency pole, fH, and the differential gain,
AVD. With a AVD = 3 and fH = 100 kHz, the resulting GBWP = 300 kHz which is much smaller than the LM4879
GBWP of 10 MHz. This figure displays that if a designer has a need to design an amplifier with a higher
differential gain, the LM4879 can still be used without running into bandwidth limitations.
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SNAS142G –SEPTEMBER 2001–REVISED MAY 2013
Figure 36. Higher Gain Audio Amplifier
The LM4879 is unity-gain stable and requires no external components besides gain-setting resistors, an input
coupling capacitor, and proper supply bypassing in the typical application. However, if a closed-loop differential
gain of greater than 10 is required, a feedback capacitor (C4) may be needed as shown in Figure 36 to
bandwidth limit the amplifier. This feedback capacitor creates a low pass filter that eliminates possible high
frequency oscillations. Care should be taken when calculating the -3dB frequency in that an incorrect
combination of R3 and C4 will cause rolloff before 20kHz. A typical combination of feedback resistor and
capacitor that will not produce audio band high frequency rolloff is R3 = 20kΩ and C4 = 25pf. These components
result in a -3dB point of approximately 320 kHz.
Figure 37. Differential Amplifier Configuration for LM4879
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Figure 38. Reference Design Board and Layout - DSBGA
Figure 39. Reference Design Board and PCB Layout Guidelines - VSSOP and SO Boards
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SNAS142G –SEPTEMBER 2001–REVISED MAY 2013
LM4879 DSBGA BOARD ARTWORK
Figure 40. Silk Screen
Figure 41. Top Layer
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Figure 42. Bottom Layer
Figure 43. Inner Layer Ground
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SNAS142G –SEPTEMBER 2001–REVISED MAY 2013
Figure 44. Inner Layer VDD
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LM4879 VSSOP DEMO BOARD ARTWORK
Figure 45. Silk Screen
Figure 46. Top Layer
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SNAS142G –SEPTEMBER 2001–REVISED MAY 2013
Figure 47. Bottom Layer
Table 1. Mono LM4879 Reference Design Boards Bill of Material for all 3 Demo Boards
Item
Part Number
551011208-001
482911183-001
151911207-001
151911207-002
152911207-001
472911207-001
210007039-002
Part Description
LM4879 Mono Reference Design Board
LM4879 Audio AMP
Qty
Ref Designator
1
1
1
1
1
1
3
2
10
20
21
25
30
35
U1
C1
C2
C3
Tant Cap 1uF 16V 10
Cer Cap 0.39uF 50V Z5U 20% 1210
Tant Cap 1.0uF 16V 10
Res 20K Ohm 1/10W 5
R1, R2, R3
J1, J2
Jumper Header Vertical Mount 2X1 0.100
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LM4879 WSON DEMO BOARD ARTWORK
Figure 48. Silk Screen
Figure 49. Top Layer
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SNAS142G –SEPTEMBER 2001–REVISED MAY 2013
Figure 50. Bottom Layer
PCB LAYOUT GUIDELINES
This section provides practical guidelines for mixed signal PCB layout that involves various digital/analog power
and ground traces. Designers should note that these are only "rule-of-thumb" recommendations and the actual
results will depend heavily on the final layout.
GENERAL MIXED SIGNAL LAYOUT RECOMMENDATION
POWER AND GROUND CIRCUITS
For 2 layer mixed signal design, it is important to isolate the digital power and ground trace paths from the
analog power and ground trace paths. Star trace routing techniques (bringing individual traces back to a central
point rather than daisy chaining traces together in a serial manner) can have a major impact on low level signal
performance. Star trace routing refers to using individual traces to feed power and ground to each circuit or even
device. This technique will take require a greater amount of design time but will not increase the final price of the
board. The only extra parts required may be some jumpers.
SINGLE-POINT POWER / GROUND CONNECTIONS
The analog power traces should be connected to the digital traces through a single point (link). A "Pi-filter" can
be helpful in minimizing high frequency noise coupling between the analog and digital sections. It is further
recommended to put digital and analog power traces over the corresponding digital and analog ground traces to
minimize noise coupling.
PLACEMENT OF DIGITAL AND ANALOG COMPONENTS
All digital components and high-speed digital signals traces should be located as far away as possible from
analog components and circuit traces.
AVOIDING TYPICAL DESIGN / LAYOUT PROBLEMS
Avoid ground loops or running digital and analog traces parallel to each other (side-by-side) on the same PCB
layer. When traces must cross over each other do it at 90 degrees. Running digital and analog traces at 90
degrees to each other from the top to the bottom side as much as possible will minimize capacitive noise
coupling and cross talk.
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REVISION HISTORY
Changes from Revision F (May 2013) to Revision G
Page
•
Changed layout of National Data Sheet to TI format .......................................................................................................... 23
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PACKAGE OPTION ADDENDUM
www.ti.com
14-Feb-2014
PACKAGING INFORMATION
Orderable Device
LM4879ITL/NOPB
LM4879MMX/NOPB
LM4879SD/NOPB
LM4879SDX/NOPB
Status Package Type Package Pins Package
Eco Plan
Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
-40 to 85
Device Marking
Samples
Drawing
Qty
(1)
(2)
(6)
(3)
(4/5)
ACTIVE
DSBGA
VSSOP
WSON
WSON
YZR
9
10
8
250
Green (RoHS
& no Sb/Br)
SNAGCU
CU SN
CU SN
CU SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
G
B3
ACTIVE
ACTIVE
ACTIVE
DGS
NGT
NGT
3500
1000
4500
Green (RoHS
& no Sb/Br)
-40 to 85
G79
Green (RoHS
& no Sb/Br)
-40 to 85
L4879SD
L4879SD
8
Green (RoHS
& no Sb/Br)
-40 to 85
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
14-Feb-2014
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Aug-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM4879ITL/NOPB
LM4879MMX/NOPB
LM4879SD/NOPB
LM4879SDX/NOPB
DSBGA
VSSOP
WSON
WSON
YZR
DGS
NGT
NGT
9
10
8
250
178.0
330.0
178.0
330.0
8.4
1.7
5.3
4.3
4.3
1.7
3.4
4.3
4.3
0.76
1.4
1.3
1.3
4.0
8.0
8.0
8.0
8.0
Q1
Q1
Q1
Q1
3500
1000
4500
12.4
12.4
12.4
12.0
12.0
12.0
8
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Aug-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LM4879ITL/NOPB
LM4879MMX/NOPB
LM4879SD/NOPB
LM4879SDX/NOPB
DSBGA
VSSOP
WSON
WSON
YZR
DGS
NGT
NGT
9
10
8
250
210.0
367.0
210.0
367.0
185.0
367.0
185.0
367.0
35.0
35.0
35.0
35.0
3500
1000
4500
8
Pack Materials-Page 2
MECHANICAL DATA
NGT0008A
SDC08A (Rev A)
www.ti.com
MECHANICAL DATA
YZR0009xxx
D
0.600±0.075
E
TLA09XXX (Rev C)
D: Max = 1.542 mm, Min =1.481 mm
E: Max = 1.542 mm, Min =1.481 mm
4215046/A
12/12
A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994.
B. This drawing is subject to change without notice.
NOTES:
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