LM4995TM/NOPB [TI]
1.3 W Audio Power Amplifier;
| 型号： | LM4995TM/NOPB |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 1.3 W Audio Power Amplifier |
| 文件： | 总22页 (文件大小：954K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM4995, LM4995TMBD
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SNAS329G –APRIL 2006–REVISED APRIL 2013
LM4995
1.3 W Audio Power Amplifier
Check for Samples: LM4995, LM4995TMBD
1
FEATURES
DESCRIPTION
The LM4995 is an audio power amplifier primarily
designed for demanding applications in mobile
phones and other portable communication device
applications. It is capable of delivering 1.2W of
continuous average power to an 8Ω BTL load with
less than 1% distortion (THD+N) from a 5VDC power
supply.
2
•
Available in Space-Saving 0.4mm Pitch
DSBGA Package
•
•
•
Ultra Low Current Shutdown Mode
BTL Output Can Drive Capacitive Loads
Improved Click and Pop Circuitry Eliminates
Noise during Turn-On and Turn-Off Transitions
Boomer audio power amplifiers were designed
specifically to provide high quality output power with a
minimal amount of external components. The
LM4995 does not require output coupling capacitors
or bootstrap capacitors, and therefore is ideally suited
for mobile phone and other low voltage applications
where minimal power consumption is a primary
requirement.
•
•
2.4 - 5.5V Operation
No Output Coupling Capacitors, Snubber
Networks or Bootstrap Capacitors Required
•
•
•
Unity-Gain Stable
External Gain Configuration Capability
WSON Package: 0.5mm Pitch, 3 x 3 mm
The LM4995 features a low-power consumption
shutdown mode, which is achieved by driving the
shutdown pin with logic low. Additionally, the LM4995
features an internal thermal shutdown protection
mechanism.
APPLICATIONS
•
•
•
Mobile Phones
PDAs
Portable electronic devices
The LM4995 contains advanced click and pop
circuitry which eliminates noise which would
otherwise occur during turn-on and turn-off
transitions.
KEY SPECIFICATIONS
•
•
PSRR at 3.6V (217Hz & 1kHz): 75 dB
Output Power at 5.0V, 1% THD+N, 8Ω:
The LM4995 is unity-gain stable and can be
configured by external gain-setting resistors.
1.3 W (typ)
•
•
Output Power at 3.6V, 1% THD+N, 8Ω:
625 mW (typ)
Shutdown Current: 0.01µA (typ)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2013, Texas Instruments Incorporated
LM4995, LM4995TMBD
SNAS329G –APRIL 2006–REVISED APRIL 2013
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TYPICAL APPLICATION
Figure 1. Typical Audio Amplifier Application Circuit
CONNECTION DIAGRAM
xxx
xxx
V
1
3
2
1
-IN
+IN
O
SHUTDOWN
1
8
V
2
O
BYPASS
+IN
2
3
7
6
GND
V
DD
GND
V
DD
GND
-IN
4
5
V
O
1
BYP
A
V
2
SHDN
C
O
Figure 3. WSON (Top View)
See NGQ0008A Package
B
Figure 2. DSBGA (Top View)
See YFQ0009 Package
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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ABSOLUTE MAXIMUM RATINGS(1)(2)
Supply Voltage(3)
6.0V
−65°C to +150°C
−0.3V to VDD +0.3V
Internally Limited
2000V
Storage Temperature
Input Voltage
Power Dissipation(4)(5)
ESD Susceptibility(6)
ESD Susceptibility(7)
200V
Junction Temperature
150°C
Thermal Resistance
θJA (DSBGA)
θJA (WSON)
96.5°C/W
56°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensure for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) If the product is in Shutdown mode and VDD exceeds 6V (to a max of 8V VDD), then most of the excess current will flow through the
ESD protection circuits. If the source impedance limits the current to a max of 10mA, then the device will be protected. If the device is
enabled when VDD is greater than 5.5V and less than 6.5V, no damage will occur, although operation life will be reduced. Operation
above 6.5V with no current limit will result in permanent damage.
(4) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature
TA. The maximum allowable power dissipation is PDMAX = (TJMAX–TA)/θJA or the number given in Absolute Maximum Ratings, whichever
is lower. For the LM4995, see power derating curves for additional information.
(5) Maximum power dissipation in the device (PDMAX) occurs at an output power level significantly below full output power. PDMAX can be
calculated using Equation 1 shown in the APPLICATION INFORMATION section. It may also be obtained from the power dissipation
graphs.
(6) Human body model, 100pF discharged through a 1.5kΩ resistor.
(7) Machine Model, 220pF–240pF discharged through all pins.
OPERATING RATINGS
Temperature Range (TMIN ≤ TA ≤ TMAX
)
−40°C ≤ TA ≤ 85°C
2.4V ≤ VDD ≤ 5.5V
Supply Voltage
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ELECTRICAL CHARACTERISTICS VDD = 5V(1)(2)
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for TA = 25°C.
LM4995
Typical(3)
Units
(Limits)
Symbol
Parameter
Conditions
Limit(4)(5)
VIN = 0V, Io = 0A, No Load
VIN = 0V, Io = 0A, 8Ω Load
VSD = VGND
1.5
1.8
0.01
5
2.5
mA (max)
mA
IDD
Quiescent Power Supply Current
ISD
VOS
Po
Shutdown Current
Output Offset Voltage
Output Power
1
µA (max)
mV (max)
W
No Load
26
THD+N = 1% (max); f = 1 kHz
1.3 (TM)
1.25 (SD)
TWU
Wake-up time
165
ms
%
THD+N
Total Harmonic Distortion + Noise
Po = 500mWRMS; f = 1kHz
0.08
Vripple = 200mV sine p-p
Input terminated to GND
73 (f = 217Hz)
73 (f = 1kHz)
PSRR
Power Supply Rejection Ratio
dB
VSDIH
VSDIL
Shutdown Voltage Input High
Shutdown Voltage Input Low
1.5
1.2
V
V
(1) All voltages are measured with respect to the ground pin, unless otherwise specified.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensure for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(3) Typicals are measured at 25°C and represent the parametric norm.
(4) Limits are specified to AOQL (Average Outgoing Quality Level).
(5) Datasheet min/max specification limits are specified by design, test, or statistical analysis.
ELECTRICAL CHARACTERISTICS VDD = 3.6V(1)(2)
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for TA = 25°C.
LM4995
Typical(3)
Units
(Limits)
Symbol
Parameter
Conditions
Limit(4)(5)
VIN = 0V, Io = 0A, No Load
VIN = 0V, Io = 0A, 8Ω Load
VSD = VGND
1.3
1.6
0.01
5
2.3
mA (max)
mA
IDD
Quiescent Power Supply Current
ISD
Shutdown Current
Output Offset Voltage
Output Power
1
µA (max)
mV (max)
mW
VOS
No Load
26
THD+N = 1% (max); f = 1 kHz
625 (TM)
610 (SD)
Po
TWU
Wake-up time
130
ms
%
THD+N
Total Harmonic Distortion + Noise
Po = 300mWRMS; f = 1kHz
0.07
Vripple = 200mV sine p-p
Input terminated to GND
75 (f = 217Hz)
76 (f = 1kHz)
PSRR
Power Supply Rejection Ratio
dB
VSDIH
VSDIL
Shutdown Voltage Input High
Shutdown Voltage Input Low
1.3
1
V
V
(1) All voltages are measured with respect to the ground pin, unless otherwise specified.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensure for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(3) Typicals are measured at 25°C and represent the parametric norm.
(4) Limits are specified to AOQL (Average Outgoing Quality Level).
(5) Datasheet min/max specification limits are specified by design, test, or statistical analysis.
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ELECTRICAL CHARACTERISTICS VDD = 3.0V(1)(2)
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for TA = 25°C.
LM4995
Typical(3)
Units
(Limits)
Symbol
Parameter
Conditions
Limit(4)(5)
VIN = 0V, Io = 0A, No Load
VIN = 0V, Io = 0A, 8Ω Load
VSD = VGND
1.3
1.6
mA
mA
µA
IDD
Quiescent Power Supply Current
ISD
Shutdown Current
0.01
5
VOS
Po
Output Offset Voltage
Output Power
No Load
mV
mW
ms
%
THD+N = 1% (max); f = 1 kHz
400
110
0.07
TWU
THD+N
Wake-up time
Total Harmonic Distortion + Noise
Po = 250mWRMS; f = 1kHz
Vripple = 200mV sine p-p
Input terminated to GND
74 (f = 217Hz)
75 (f = 1kHz)
PSRR
Power Supply Rejection Ratio
dB
VSDIH
VSDIL
Shutdown Voltage Input High
Shutdown Voltage Input Low
1.2
1
V
V
(1) All voltages are measured with respect to the ground pin, unless otherwise specified.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensure for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(3) Typicals are measured at 25°C and represent the parametric norm.
(4) Limits are specified to AOQL (Average Outgoing Quality Level).
(5) Datasheet min/max specification limits are specified by design, test, or statistical analysis.
EXTERNAL COMPONENTS DESCRIPTION
(Figure 1)
Components
Functional Description
1.
Ri
Inverting input resistance which sets the closed-loop gain in conjunction with Rf. This resistor also forms a high pass
filter with Ci at fC= 1/(2π RiCi).
2.
Ci
Input coupling capacitor which blocks the DC voltage at the amplifiers input terminals. Also creates a highpass filter with
Ri at fC = 1/(2π RiCi). Refer to the section, PROPER SELECTION OF EXTERNAL COMPONENTS, for an explanation
of how to determine the value of Ci.
3.
4.
Rf
Feedback resistance which sets the closed-loop gain in conjunction with Ri.
CS
Supply bypass capacitor which provides power supply filtering. Refer to the POWER SUPPLY BYPASSING section for
information concerning proper placement and selection of the supply bypass capacitor.
5.
CB
Bypass pin capacitor which provides half-supply filtering. Refer to the section, PROPER SELECTION OF EXTERNAL
COMPONENTS, for information concerning proper placement and selection of CB.
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TYPICAL PERFORMANCE CHARACTERISTICS
THD+N vs Output Power
VDD = 3V, RL = 8Ω
THD+N vs Output Power
VDD = 3.6V, RL = 8Ω
10
5
10
5
2
2
1
1
0.5
0.5
0.2
0.1
0.2
0.1
0.05
0.05
0.02
0.01
0.02
0.01
10
20
50
100 200
500 1000
10
20
50
100 200
500 1000
OUTPUT POWER (mW)
OUTPUT POWER (mW)
Figure 4.
Figure 5.
THD+N vs Frequency
VDD = 3V, RL = 8Ω,
f = 1kHz, PO = 250mW
THD+N vs Output Power
VDD = 5V, RL = 8Ω
10
5
10
5
2
2
1
1
0.5
0.5
0.2
0.1
0.2
0.1
0.05
0.05
0.02
0.01
0.02
0.01
20
50 100 200 500 1k 2k 5k 10k 20k
20
50
100 200 500
1000 2000
OUTPUT POWER (mW)
FREQUENCY (Hz)
Figure 6.
Figure 7.
THD+N vs Frequency
VDD = 3.6V, RL = 8Ω,
f = 1kHz, PO = 300mW
THD+N vs Frequency
VDD = 5V, RL = 8Ω,
f = 1kHz, PO = 500mW
10
5
10
5
2
2
1
1
0.5
0.5
0.2
0.1
0.2
0.1
0.05
0.05
0.02
0.01
0.02
0.01
20
50 100 200 500 1k 2k 5k 10k 20k
20
50 100 200 500 1k 2k 5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 8.
Figure 9.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR vs Frequency
VDD = 3V, RL = 8Ω
PSRR vs Frequency
VDD = 3.6V, RL = 8Ω
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
20
50 100 200 500 1k 2k 5k 10k 20k
20
50 100 200 500 1k 2k 5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 10.
Figure 11.
PSRR vs Frequency
VDD = 5V, RL = 8Ω
Power Dissipation vs Output Power
VDD = 3V, RL = 8Ω
0
250
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
200
150
100
50
0
0
50 100 150 200 250 300 350
50 100 200 500 1k 2k 5k 10k
OUTPUT POWER (mW)
FREQUENCY (Hz)
Figure 12.
Figure 13.
Power Dissipation vs Output Power
Power Dissipation vs Output Power
VDD = 3.6V, RL = 8Ω
VDD = 5V, RL = 8Ω
350
700
300
250
200
150
100
50
600
500
400
300
200
100
0
0
0
100
200
300
400
500
600
0
200 400 600 800 1000 1200
OUTPUT POWER (mW)
OUTPUT POWER (mW)
Figure 14.
Figure 15.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Output Level vs Frequency Response
(Three different caps)
Shutdown Voltage VSDIH
VDD = 3V
100
90
80
70
60
+1
Ci = 1mF (tantulum)
Ci = 1mF (ceramic)
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
Ci = 0.33mF (tantulum)
50
40
30
20
10
0
20
50 100 200 500 1k 2k
5k 10k 20k
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FREQUENCY (Hz)
SHUTDOWN VOLTAGE (V)
Figure 16.
Figure 17.
Shutdown Voltage VSDIH
VDD = 3.6V
Shutdown Voltage VSDIH
VDD = 5V
100
90
80
70
60
100
90
80
70
60
50
40
30
20
10
50
40
30
20
10
0
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
SHUTDOWN VOLTAGE (V)
SHUTDOWN VOLTAGE (V)
Figure 18.
Figure 19.
Shutdown Voltage VSDIL
VDD = 3V
Shutdown Voltage VSDIL
VDD = 3.6V
100
100
90
80
70
60
90
80
70
60
50
40
30
20
10
50
40
30
20
10
0
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
SHUTDOWN VOLTAGE (V)
SHUTDOWN VOLTAGE (V)
Figure 20.
Figure 21.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Shutdown Voltage VSDIL
VDD = 5V
Output Power vs Supply Voltage
RL = 8Ω
100
90
80
70
60
2000
1800
1600
1400
1200
1000
800
THD+N = 10%
50
40
30
20
10
THD+N = 1%
600
400
200
0
0
2.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
3.0
4.0
5.0
6.0
VOLTAGE SUPPLY (V)
SHUTDOWN VOLTAGE (V)
Figure 22.
Figure 23.
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APPLICATION INFORMATION
BRIDGE CONFIGURATION EXPLANATION
As shown in Figure 1, the LM4995 has two internal operational amplifiers. The first amplifier's gain is externally
configurable, while the second amplifier is internally fixed in a unity-gain, inverting configuration. The closed-loop
gain of the first amplifier is set by selecting the ratio of Rf to Ri while the second amplifier's gain is fixed by the
two internal 20kΩ resistors. Figure 1 shows that the output of amplifier one serves as the input to amplifier two
which results in both amplifiers producing signals identical in magnitude, but out of phase by 180°. Consequently,
the differential gain for the IC is
AVD= 2 *(Rf/Ri)
(1)
By driving the load differentially through outputs Vo1 and Vo2, an amplifier configuration commonly referred to as
“bridged mode” is established. Bridged mode operation is different from the classical single-ended amplifier
configuration where one side of the load is connected to ground.
A bridge amplifier design has a few distinct advantages over the single-ended configuration, as it provides
differential drive to the load, thus doubling output swing for a specified supply voltage. Four times the output
power is possible as compared to a single-ended amplifier under the same conditions. This increase in attainable
output power assumes that the amplifier is not current limited or clipped. In order to choose an amplifier's closed-
loop gain without causing excessive clipping, please refer to the AUDIO POWER AMPLIFIER DESIGN section.
A bridge configuration, such as the one used in LM4995, also creates a second advantage over single-ended
amplifiers. Since the differential outputs, Vo1 and Vo2, are biased at half-supply, no net DC voltage exists across
the load. This eliminates the need for an output coupling capacitor which is required in a single supply, single-
ended amplifier configuration. Without an output coupling capacitor, the half-supply bias across the load would
result in both increased internal IC power dissipation and also possible loudspeaker damage.
POWER DISSIPATION
Power dissipation is a major concern when designing a successful amplifier, whether the amplifier is bridged or
single-ended. A direct consequence of the increased power delivered to the load by a bridge amplifier is an
increase in internal power dissipation. Since the LM4995 has two operational amplifiers in one package, the
maximum internal power dissipation is 4 times that of a single-ended amplifier. The maximum power dissipation
for a given application can be derived from the power dissipation graphs or from Equation (1).
PDMAX = 4*(VDD)2/(2π2RL)
(2)
It is critical that the maximum junction temperature TJMAX of 150°C is not exceeded. TJMAX can be determined
from the power derating curves by using PDMAX and the PC board foil area. By adding copper foil, the thermal
resistance of the application can be reduced from the free air value of θJA, resulting in higher PDMAX values
without thermal shutdown protection circuitry being activated. Additional copper foil can be added to any of the
leads connected to the LM4995. It is especially effective when connected to VDD, GND, and the output pins.
Refer to the application information on the LM4995 reference design board for an example of good heat sinking.
If TJMAX still exceeds 150°C, then additional changes must be made. These changes can include reduced supply
voltage, higher load impedance, or reduced ambient temperature. Internal power dissipation is a function of
output power. Refer to the TYPICAL PERFORMANCE CHARACTERISTICS curves for power dissipation
information for different output powers and output loading.
POWER SUPPLY BYPASSING
As with any amplifier, proper supply bypassing is critical for low noise performance and high supply rejection.
The capacitor location on both the bypass and power supply pins should be as close to the device as possible. A
ceramic 0.1μF placed in parallel with the tantalum 2.2μF bypass (CB) capacitor will aid in supply stability. This
does not eliminate the need for bypassing the power supply pins of the LM4995. The selection of a bypass
capacitor, especially CB, is dependent upon PSRR requirements, click and pop performance (as explained in the
section, PROPER SELECTION OF EXTERNAL COMPONENTS), system cost, and size constraints.
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SHUTDOWN FUNCTION
In order to reduce power consumption while not in use, the LM4995 contains shutdown circuitry that is used to
turn off the amplifier's bias circuitry. This shutdown feature turns the amplifier off when logic low is placed on the
shutdown pin. By switching the shutdown pin to GND, the LM4995 supply current draw will be minimized in idle
mode. Idle current is measured with the shutdown pin connected to GND. The trigger point for shutdown is
shown as a typical value in the Shutdown Hysteresis Voltage graphs in the TYPICAL PERFORMANCE
CHARACTERISTICS section. It is best to switch between ground and supply for maximum performance. While
the device may be disabled with shutdown voltages in between ground and supply, the idle current may be
greater than the typical value of 0.01µA. In either case, the shutdown pin should be tied to a definite voltage to
avoid unwanted state changes.
In many applications, a microcontroller or microprocessor output is used to control the shutdown circuitry, which
provides a quick, smooth transition to shutdown. Another solution is to use a single-throw switch in conjunction
with an external pull-up resistor. This scheme ensures that the shutdown pin will not float, thus preventing
unwanted state changes.
PROPER SELECTION OF EXTERNAL COMPONENTS
Proper selection of external components in applications using integrated power amplifiers is critical to optimize
device and system performance. While the LM4995 is tolerant of external component combinations,
consideration to component values must be used to maximize overall system quality.
The LM4995 is unity-gain stable which gives the designer maximum system flexibility. The LM4995 should be
used in low gain configurations to minimize THD+N values, and maximize the signal to noise ratio. Low gain
configurations require large input signals to obtain a given output power. Input signals equal to or greater than 1
Vrms are available from sources such as audio codecs. Please refer to the section, AUDIO POWER AMPLIFIER
DESIGN, for a more complete explanation of proper gain selection.
Besides gain, one of the major considerations is the closed-loop bandwidth of the amplifier. To a large extent, the
bandwidth is dictated by the choice of external components shown in Figure 1. The input coupling capacitor, Ci,
forms a first order high pass filter which limits low frequency response. This value should be chosen based on
needed frequency response for a few distinct reasons.
SELECTION OF INPUT CAPACITOR SIZE
Large input capacitors are both expensive and space hungry for portable designs. Clearly, a certain sized
capacitor is needed to couple in low frequencies without severe attenuation. But in many cases the speakers
used in portable systems, whether internal or external, have little ability to reproduce signals below 100Hz to
150Hz. Thus, using a large input capacitor may not increase actual system performance.
In addition to system cost and size, click and pop performance is effected by the size of the input coupling
capacitor, Ci. A larger input coupling capacitor requires more charge to reach its quiescent DC voltage (nominally
1/2 VDD). This charge comes from the output via the feedback and is apt to create pops upon device enable.
Thus, by minimizing the capacitor size based on necessary low frequency response, turn-on pops can be
minimized.
Besides minimizing the input capacitor size, careful consideration should be paid to the bypass capacitor value.
Bypass capacitor, CB, is the most critical component to minimize turn-on pops since it determines how fast the
LM4995 turns on. The slower the LM4995's outputs ramp to their quiescent DC voltage (nominally 1/2 VDD), the
smaller the turn-on pop. Choosing CB equal to 1.0µF along with a small value of Ci (in the range of 0.1µF to
0.39µF), should produce a virtually clickless and popless shutdown function. While the device will function
properly, (no oscillations or motorboating), with CB equal to 0.1µF, the device will be much more susceptible to
turn-on clicks and pops. Thus, a value of CB equal to 1.0µF is recommended in all but the most cost sensitive
designs.
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SNAS329G –APRIL 2006–REVISED APRIL 2013
AUDIO POWER AMPLIFIER DESIGN
A 1W/8Ω AUDIO AMPLIFIER
www.ti.com
Given:
Power Output
Load Impedance
Input Level
1 Wrms
8Ω
1 Vrms
Input Impedance
Bandwidth
20 kΩ
100 Hz–20 kHz ± 0.25 dB
A designer must first determine the minimum supply rail to obtain the specified output power. By extrapolating
from the Output Power vs Supply Voltage graphs in the TYPICAL PERFORMANCE CHARACTERISTICS
section, the supply rail can be easily found.
5V is a standard voltage in most applications, it is chosen for the supply rail. Extra supply voltage creates
headroom that allows the LM4995 to reproduce peaks in excess of 1W without producing audible distortion. At
this time, the designer must make sure that the power supply choice along with the output impedance does not
violate the conditions explained in the POWER DISSIPATION section.
Once the power dissipation equations have been addressed, the required differential gain can be determined
from Equation (3).
(3)
Rf/Ri = AVD/2
(4)
From Equation (3), the minimum AVD is 2.83; use AVD = 3.
Since the desired input impedance was 20 kΩ, and with a AVD impedance of 2, a ratio of 1.5:1 of Rf to Ri results
in an allocation of Ri = 20 kΩ and Rf = 30 kΩ. The final design step is to address the bandwidth requirements
which must be stated as a pair of −3 dB frequency points. Five times away from a −3 dB point is 0.17 dB down
from passband response which is better than the required ±0.25 dB specified.
fL = 100Hz/5 = 20Hz
fH = 20kHz * 5 = 100kHz
As stated in the EXTERNAL COMPONENTS DESCRIPTION section, Ri in conjunction with Ci create a highpass
filter.
Ci ≥ 1/(2π*20 kΩ*20 Hz) = 0.397 µF; use 0.39 µF
The high frequency pole is determined by the product of the desired frequency pole, fH, and the differential gain,
AVD. With a AVD = 3 and fH = 100kHz, the resulting GBWP = 300kHz which is much smaller than the LM4995
GBWP of 2.5MHz. This figure displays that if a designer has a need to design an amplifier with a higher
differential gain, the LM4995 can still be used without running into bandwidth limitations.
The LM4995 is unity-gain stable and requires no external components besides gain-setting resistors, an input
coupling capacitor, and proper supply bypassing in the typical application. However, if a closed-loop differential
gain of greater than 10 is required, a feedback capacitor (C4) may be needed as shown in Figure 24 to
bandwidth limit the amplifier. This feedback capacitor creates a low pass filter that eliminates possible high
frequency oscillations. Care should be taken when calculating the -3dB frequency in that an incorrect
combination of R3 and C4 will cause rolloff before 20kHz. A typical combination of feedback resistor and
capacitor that will not produce audio band high frequency rolloff is R3 = 20kΩ and C4 = 25pf. These components
result in a -3dB point of approximately 320kHz.
12
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LM4995, LM4995TMBD
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SNAS329G –APRIL 2006–REVISED APRIL 2013
Figure 24. HIGHER GAIN AUDIO AMPLIFIER
Figure 25. DIFFERENTIAL AMPLIFIER CONFIGURATION FOR LM4995
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SNAS329G –APRIL 2006–REVISED APRIL 2013
www.ti.com
Figure 26. REFERENCE DESIGN BOARD SCHEMATIC
PCB LAYOUT GUIDELINES
This section provides practical guidelines for mixed signal PCB layout that involves various digital/analog power
and ground traces. Designers should note that these are only "rule-of-thumb" recommendations and the actual
results will depend heavily on the final layout.
GENERAL MIXED SIGNAL LAYOUT RECOMMENDATION
POWER AND GROUND CIRCUITS
For 2 layer mixed signal design, it is important to isolate the digital power and ground trace paths from the
analog power and ground trace paths. Star trace routing techniques (bringing individual traces back to a central
point rather than daisy chaining traces together in a serial manner) can have a major impact on low level signal
performance. Star trace routing refers to using individual traces to feed power and ground to each circuit or even
device. This technique will require a greater amount of design time but will not increase the final price of the
board. The only extra parts required will be some jumpers.
SINGLE-POINT POWER / GROUND CONNECTIONS
The analog power traces should be connected to the digital traces through a single point (link). A "Pi-filter" can
be helpful in minimizing High Frequency noise coupling between the analog and digital sections. It is further
recommended to put digital and analog power traces over the corresponding digital and analog ground traces to
minimize noise coupling.
PLACEMENT OF DIGITAL AND ANALOG COMPONENTS
All digital components and high-speed digital signal traces should be located as far away as possible from analog
components and circuit traces.
AVOIDING TYPICAL DESIGN / LAYOUT PROBLEMS
Avoid ground loops or running digital and analog traces parallel to each other (side-by-side) on the same PCB
layer. When traces must cross over each other do it at 90 degrees. Running digital and analog traces at 90
degrees to each other from the top to the bottom side as much as possible will minimize capacitive noise
coupling and cross talk.
14
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LM4995, LM4995TMBD
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SNAS329G –APRIL 2006–REVISED APRIL 2013
REVISION HISTORY
Rev
1.0
1.1
1.2
1.3
Date
Description
Initial WEB released of the datasheet.
Added the SD package.
Text edits.
04/05/06
05/17/06
08/07/06
08/22/06
Edited the THD+N Typical values on the 3
EC tables, then re-released the D/S to the
WEB (per Allan S.).
1.4
09/11/07
Updated the SD pkg. diagram.
Changes from Revision F (April 2013) to Revision G
Page
•
Changed layout of National Data Sheet to TI format .......................................................................................................... 14
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PACKAGE OPTION ADDENDUM
www.ti.com
26-Aug-2013
PACKAGING INFORMATION
Orderable Device
LM4995SD/NOPB
LM4995TM/NOPB
LM4995TMX/NOPB
Status Package Type Package Pins Package
Eco Plan Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
ACTIVE
WSON
DSBGA
DSBGA
NGQ
8
9
9
1000
Green (RoHS
& no Sb/Br)
Call TI
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
L4995
ACTIVE
ACTIVE
YFQ
YFQ
250
Green (RoHS
& no Sb/Br)
SNAGCU
SNAGCU
-40 to 85
-40 to 85
G
G8
3000
Green (RoHS
& no Sb/Br)
G
G8
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
26-Aug-2013
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Oct-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM4995SD/NOPB
LM4995TM/NOPB
LM4995TMX/NOPB
WSON
DSBGA
DSBGA
NGQ
YFQ
YFQ
8
9
9
1000
250
178.0
178.0
178.0
12.4
8.4
3.3
3.3
1.0
8.0
4.0
4.0
12.0
8.0
Q1
Q1
Q1
1.35
1.35
1.35
1.35
0.76
0.76
3000
8.4
8.0
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Oct-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LM4995SD/NOPB
LM4995TM/NOPB
LM4995TMX/NOPB
WSON
DSBGA
DSBGA
NGQ
YFQ
YFQ
8
9
9
1000
250
210.0
210.0
210.0
185.0
185.0
185.0
35.0
35.0
35.0
3000
Pack Materials-Page 2
MECHANICAL DATA
NGQ0008A
SDA08A (Rev A)
www.ti.com
MECHANICAL DATA
YFQ0009x
D
0.600±0.075
E
TMD09XXX (Rev A)
D: Max = 1.24 mm, Min = 1.18 mm
E: Max = 1.24 mm, Min = 1.18 mm
4215077/A
12/12
A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994.
B. This drawing is subject to change without notice.
NOTES:
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相关型号：
LM4995TMX
IC 1.3 W, 1 CHANNEL, AUDIO AMPLIFIER, BGA9, 0.4 MM PICTH, MICRO, BGA-9, Audio/Video Amplifier
NSC
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