LM5066_14 [TI]
High Voltage System Power Management and Protection IC with PMBus;
| 型号： | LM5066_14 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | High Voltage System Power Management and Protection IC with PMBus |
| 文件： | 总63页 (文件大小：1462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM5066
www.ti.com
SNVS655G –JUNE 2011–REVISED FEBRUARY 2013
LM5066 High Voltage System Power Management and Protection IC with PMBus
Check for Samples: LM5066
1
FEATURES
APPLICATIONS
2
•
Input Voltage Range: 10V to 80V
•
•
•
Server Backplane Systems
•
•
Programmable 26 mV or 50 mV Current Limit
Threshold with Power Limiting (MOSFET
Power Dissipation Limiting)
Base Station Power Distribution Systems
Solid State Circuit Breaker
Real Time Monitoring of VIN, VOUT, IIN, PIN, VAUX
with 12-Bit Resolution and 1 kHz Sampling
Rate
DESCRIPTION
The LM5066 combines a high performance hot swap
controller with a PMBus™ compliant SMBus/I2C
interface to accurately measure, protect and control
the electrical operating conditions of systems
connected to a backplane power bus. The LM5066
continuously supplies real-time power, voltage,
current, temperature and fault data to the system
management host via the SMBus interface.
•
•
•
Configurable Circuit Breaker Protection for
Hard Shorts
Configurable Under-Voltage and Over-Voltage
Protection
Remote Temperature Sensing with
Programmable Warning and Shutdown
Thresholds
The LM5066 control block includes a unique hot
swap architecture that provides current and power
limiting to protect sensitive circuitry during insertion of
boards into a live system backplane, or any other
"hot" power source. A fast acting circuit breaker
prevents damage in the event of a short circuit on the
output. The input under-voltage and over-voltage
levels and hysteresis are configurable, as well as the
insertion delay time and fault detection time. A
temperature monitoring block on the LM5066
•
•
•
•
Detection and Notification of Damaged
MOSFET Condition
Power Measurement Accuracy: ±4.5% Over
Temperature
True Input Power Averages Dynamic Power
Readings
Averaging of VIN, IIN, PIN, and VOUT Over
Programmable Interval Ranging from 0.001 to
4 Seconds
interfaces with
a
low-cost external diode for
monitoring the temperature of the external MOSFET
or other thermally sensitive components. The PGD
output provides a fast indicator when the input and/or
output voltages are outside their programmed ranges.
LM5066 current measurement accuracy is ±4.5%
over the operating temperature range.
•
•
Programmable WARN and FAULT Thresholds
with SMBA Notification
Black Box Capture of Telemetry
Measurements and Device Status Triggered by
WARN or FAULT Condition
I2C/SMBus Interface and PMBus Compliant
Command Structure
The LM5066 monitoring block computes both the
real-time and average values of subsystem operating
parameters (VIN, IIN, PIN, VOUT) as well as the peak
power. Accurate power averaging is accomplished by
averaging the product of the input voltage and
current. A black box (Telemetry/Fault Snapshot)
function captures and stores telemetry data and
device status in the event of a warning or a fault.
•
•
•
Full Featured Application Development
Software
HTSSOP-28 Package
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011–2013, Texas Instruments Incorporated
LM5066
SNVS655G –JUNE 2011–REVISED FEBRUARY 2013
www.ti.com
Typical Application Schematic
Q
2
VIN
R
S
VOUT
Q
1
D
C
OUT
1
C
IN
Z
1
R
4
SENSE
GATE OUT
DIODE
FB
VIN_K
VIN
VDD
VDD
R
1
R
5
UVLO/EN
R
PG
R
2
PGD
OVLO
LM5066
ADR2
ADR1
ADR0
N/C
N/C
AGND
GND
R
3
RETRY
CL
SMBA
SDAO
SDAI
SMBus
Interface
Auxillary ADC Input
(0V œ 2.97V)
VAUX
SCL
PWR
VDD
VREF
TIMER
R
PWR
C
TIMER
1 mF
1 mF
Connection Diagram
Solder exposed pad to ground.
28
27
26
25
24
23
22
21
PGD
1
OUT
2
GATE
NC
3
4
PWR
SENSE
TIMER
RETRY
VIN_K
VIN
5
6
NC
FB
UVLO/EN
7
CL
VDD
ADR0
ADR1
8
OVLO
20
19
18
17
16
15
9
AGND
GND
10
11
12
13
14
SDAI
ADR2
VAUX
DIODE
VREF
SDAO
SCL
SMBA
Top View
28-Lead HTSSOP with
Exposed Pad
PIN DESCRIPTIONS
Pin
No.
Name
Description
Applications Information
Pad Exposed Pad
Exposed pad of HTSSOP
package
Solder to the ground plane to reduce thermal resistance
1
2
OUT
Output feedback
Connect to the output rail (external MOSFET source). Internally used to determine
the MOSFET VDS voltage for power limiting, and to monitor the output voltage.
GATE
Gate drive output
Connect to the external MOSFET's gate.
2
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PIN DESCRIPTIONS (continued)
Pin
No.
Name
Description
Applications Information
3
SENSE
Current sense input
The voltage across the current sense resistor (RS) is measured from VIN_K to this
pin. If the voltage across RS reaches over-current threshold the load current is limited
and the fault timer activates.
4
5
6
VIN_K
VIN
Positive supply kelvin pin
Positive supply input
No connection
The input voltage is measured on this pin.
This pin is the input supply connection for the device.
N/C
7
UVLO/EN
Under-voltage lockout
An external resistor divider from the system input voltage sets the under-voltage
turn-on threshold. An internal 20 µA current source provides hysteresis. The enable
threshold at the pin is nominally 2.48V. This pin can also be used for remote
shutdown control.
8
OVLO
Over-voltage lockout
An external resistor divider from the system input voltage sets the over-voltage turn-
off threshold. An internal 21 µA current source provides hysteresis. The disable
threshold at the pin is 2.46V.
9
AGND
GND
Circuit ground
Circuit ground
Analog device ground. Connect to GND at the pin.
10
11
SDAI
SMBus data input pin
Data input pin for SMBus. Connect to SDAO if the application does not require
unidirectional isolation devices.
12
SDAO
SMBus data output pin
Data output pin for SMBus. Connect to SDAI if the application does not require
unidirectional isolation devices.
13
14
15
SCL
SMBus clock
SMBus alert line
Internal Reference
Clock pin for SMBus.
SMBA
VREF
Alert pin for SMBus, active low.
Internally generated precision reference used for analog to digital conversion.
Connect a 1 µF capacitor on this pin to ground for bypassing.
16
17
DIODE
VAUX
External diode
Connect this to a diode-configured MMBT3904 NPN transistor for temperature
monitoring.
Auxiliary voltage input
Auxiliary pin allows voltage telemetry from an external source. Full scale input of
2.97V.
18
19
20
21
ADR2
ADR1
ADR0
VDD
SMBUS address line 2
SMBUS address line 1
SMBUS address line 0
Tri- state address line. Should be connected to GND, VDD, or left floating.
Tri - state address line. Should be connected to GND, VDD, or left floating.
Tri - state address line. Should be connected to GND, VDD, or left floating.
Internal sub-regulator output Internally sub-regulated 4.85V bias supply. Connect a 1 µF capacitor on this pin to
ground for bypassing.
22
23
CL
FB
Current limit range
Connect this pin to GND or leave floating to set the nominal over-current threshold at
50mV. Connecting CL to VDD will set the over-current threshold to be 26mV.
Power Good feedback
An external resistor divider from the output sets the output voltage at which the PGD
pin switches. The threshold at the pin is nominally 2.46V. An internal 20 µA current
source provides hysteresis.
24
RETRY
Fault retry input
This pin configures the power up fault retry behavior. When this pin is connected to
GND or left floating, the device will continually try to engage power during a fault. If
the pin is connected to VDD, the device will latch off during a fault.
25
26
TIMER
PWR
Timing capacitor
Power limit set
An external capacitor connected to this pin sets the insertion time delay, fault timeout
period and restart timing.
An external resistor connected to this pin, in conjunction with the current sense
resistor (RS), sets the maximum power dissipation allowed in the external series
pass MOSFET.
27
28
N/C
No Connection
PGD
Power Good indicator
An open drain output. This output is high when the voltage at the FB pin is above
VFBTH (nominally 2.46V) and the input supply is within its under-voltage and over-
voltage thresholds. Connect to the output rail (external MOSFET source) or any
other voltage to be monitored.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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(1)
Absolute Maximum Ratings
(2)
VIN, VIN_K, GATE, UVLO/EN, OUT, SENSE, PGD to GND
-0.3V to 100V
-0.3V to 7.0V
OVLO, FB, TIMER, PWR to GND
SCL, SDAI, SDAO, CL, ADR0, ADR1, ADR2, VDD, VAUX, DIODE,
RETRY to GND
-0.3V to 6.0V
-0.3V to +0.3V
2kV
SENSE to VIN_K, VIN to VIN_K, AGND to GND
(3)
ESD Rating
Human Body Model
Storage Temperature
Junction Temperature
-65°C to +150°C
+150°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For specifications and conditions see the
Electrical Characteristics.
(2) The GATE pin voltage is typically 13.6V above VIN when the LM5066 is enabled. Therefore, the Absolute Maximum Rating for VIN
applies only when the LM5066 is disabled, or for a momentary surge to that voltage since the Absolute Maximum Rating for the GATE
pin is also 100V.
(3) The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. 2 kV rating for all pins except GATE
which is rated for 1 kV.
Operating Ratings
VIN, SENSE, OUT voltage
10V to 80V
Junction Temperature
-40°C to +125°C
4
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SNVS655G –JUNE 2011–REVISED FEBRUARY 2013
Electrical Characteristics
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C
to +125°C unless otherwise stated. Minimum and Maximum limits are ensured through test, design, or statistical correlation.
Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless
(2)
otherwise stated the following conditions apply: VIN = 48V. See (1) and
.
Symbol
Input (VIN Pin)
IIN-EN
Parameter
Conditions
Min
Typ
Max
Units
Input Current, enabled
VUVLO = 3V and VOVLO = 2V
VIN Increasing
7.2
7.8
9.5
9.0
mA
V
PORIT
Power On Reset threshold at VIN to
trigger insertion timer
POREN
Power On Reset threshold at VIN to
enable all functions
VIN Increasing
VIN Decreasing
8.6
9.9
V
PORHYS
POREN Hysteresis
120
mV
VDD Regulator (VDD pin)
VDD
IVDD = 0 mA
4.60
-25
4.90
4.85
-30
5.15
-42
V
V
IVDD = 10 mA
VDDILIM
VDDPOR
UVLO/EN, OVLO Pins
VDD Current Limit
mA
V
VDD Voltage Reset threshold
VDD Rising
4.1
UVLOTH
UVLOHYS
UVLODEL
UVLO threshold
VUVLO Falling
2.41
13
2.48
20
9
2.55
26
V
UVLO hysteresis current
UVLO delay
UVLO = 1V
µA
µs
Delay to GATE high
Delay to GATE low
UVLO = 3V
13
UVLOBIAS
OVLOTH
UVLO bias current
OVLO threshold
1
µA
V
VOVLO Rising
2.39
-26
2.46
-21
13
2.53
-13
OVLOHYS
OVLODEL
OVLO hysteresis current
OVLO delay
OVLO = 1V
µA
µs
Delay to GATE high
Delay to GATE low
OVLO = 1V
10
OVLOBIAS
OVLO bias current
1
µA
Power Good (PGD pin)
PGDVOL
PGDIOH
Output low voltage
ISINK = 2 mA
VPGD = 80V
60
110
1
mV
µA
Off leakage current
FB Pin
FBTH
FBHYS
FBDEL
FB Threshold
VUVLO = 3V and VOVLO = 2V
2.41
-25
2.46
-20
7.6
2.52
-15
V
FB Hysteresis Current
FB Delay
µA
µs
µs
µA
Delay to PGD high
Delay to PGD low
VFB = 2.3V
9.2
FBLEAK
Off Leakage Current
1
Power Limit (PWR Pin)
PWRLIM
Power limit sense voltage (VIN-SENSE) SENSE-OUT = 48V, RPWR = 121 kΩ
SENSE-OUT = 24V, RPWR = 75 kΩ
16.5
19.5
23
22.5
mV
mV
µA
Ω
IPWR
PWR pin current
VPWR = 2.5V
UVLO = 2V
-20
135
RSAT(PWR)
PWR pin impedance when disabled
Gate Control (GATE Pin)
IGATE Source current
Normal Operation
UVLO = 2V
-26
3.4
50
-20
4.2
-10
5.3
µA
mA
mA
Fault Sink current
POR Circuit Breaker sink current
VIN - SENSE = 150 mV or VIN < PORIT,
VGATE = 5V
115
180
(1) Current out of a pin is indicated as a negative value.
(2) All electrical characteristics having room temperature limits are tested during production at TA = 25°C. All hot and cold limits are
specified by correlating the electrical characteristics to process and temperature variations and applying statistical process control.
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Electrical Characteristics (continued)
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C
to +125°C unless otherwise stated. Minimum and Maximum limits are ensured through test, design, or statistical correlation.
Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless
otherwise stated the following conditions apply: VIN = 48V. See (1) and (2)
.
Symbol
Parameter
Conditions
Min
15
Typ
Max
18
Units
VGATEZ
Reverse-bias voltage of GATE to OUT
zener diode
GATE - OUT
GATE - OUT
16.5
V
VGATECP
Peak charge pump voltage in normal
13.6
V
operation (VIN = VOUT
)
OUT Pin
IOUT-EN
IOUT-DIS
OUT bias current, enabled
OUT bias current, disabled
OUT = VIN, Normal operation
78
µA
µA
(3)
Disabled, OUT = 0V, SENSE = VIN
-50
Current Limit
VCL
Current limit threshold voltage
(VIN -VSENSE
CL = VDD
23
47
26
50
29
53
mV
)
CL = GND
tCL
Response time
VIN-SENSE stepped from 0 mV to 80 mV
Enabled, SENSE = OUT
Disabled, OUT = 0V
Enabled, OUT = 0V
45
µs
ISENSE
SENSE input current
25
µA
66
220
Circuit Breaker
RTCB
Circuit Breaker to Current Limit Ratio:
CB/CL ratio bit = 0, ILim = 50 mV
CB/CL ratio bit = 1, ILim = 50 mV
CB/CL ratio bit = 0, ILim = 26 mV
CB/CL ratio bit = 1, ILim = 26 mV
CB/CL ratio bit = 0, ILim = 50 mV
CB/CL ratio bit = 1, ILim = 50 mV
CB/CL ratio bit = 0, ILim = 26 mV
CB/CL ratio bit = 1, ILim = 26 mV
1.64
3.28
1.94
3.87
1.88
3.75
96
2.23
4.45
V/V
mV
µs
(VIN -VSENSE CB/VCL
)
VCB
Circuit Breaker Threshold Voltage:
(VIN - VSENSE
80
164
39
110
222
57
)
193
48
79
96
113
0.83
tCB
Response time
VIN - SENSE stepped from 0 mV to 150
mV, time to GATE low, no load
0.42
Timer (TIMER pin)
VTMRH
Upper threshold
Lower threshold
3.74
0.98
3.9
1.1
0.3
0.3
-4.8
1.5
-75
2.5
0.5
12
4.07
1.24
V
V
VTMRL
Restart cycles
End of 8th cycle
Re-enable Threshold
TIMER pin = 2V
V
V
ITIMER
Insertion time current
-5.9
1.0
-95
1.7
-3.3
2.0
-50
3.2
µA
mA
µA
µA
%
Sink current, end of insertion time
Fault detection current
Fault sink current
DCFAULT
Fault Restart Duty Cycle
Fault to GATE low delay
tFAULT_DELAY
TIMER pin reaches the upper threshold
µs
Internal Reference
VREF
Reference Voltage
2.93
2.97
3.02
V
ADC and MUX
Resolution
12
±4
100
1
Bits
LSB
µs
INL
tACQUIRE
tRR
Integral Non-Linearity
Acquisition + Conversion Time
Acquisition Round Robin Time
ADC only
Any Channel
Cycle all channels
ms
(3) OUT bias current (disabled) due to leakage current through an internal 1 MΩ resistance from SENSE to VOUT.
6
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Electrical Characteristics (continued)
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C
to +125°C unless otherwise stated. Minimum and Maximum limits are ensured through test, design, or statistical correlation.
Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless
otherwise stated the following conditions apply: VIN = 48V. See (1) and (2)
.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Telemetry Accuracy
IINFSR
Current input full scale range
CL = GND
CL = VDD
CL = GND
CL = VDD
75.8
38.2
18.5
9.3
mV
mV
µV
µV
V
IINLSB
Current input LSB
VAUXFSR
VAUXLSB
VINFSR
VINLSB
IINACC
VAUX input full scale range
VAUX input LSB
2.97
725
µV
V
Input voltage full scale range
Input voltage LSB
89.3
21.8
mV
%
Input Current Accuracy
VAUX, VIN, VOUT
VIN – SENSE = 50mV, CL = GND
-3.0
-2.7
+3.0
+2.7
VACC
VIN, VOUT = 48V
VAUX = 2.8V
%
PINACC
Input Power Accuracy
VIN = 48V, VIN – SENSE = 50mV,
CL = VDD
-4.5
+4.5
10
%
Remote Diode Temperature Sensor
TACC
Temperature Accuracy Using Local
TA = 25°C to 85°C
2
°C
Diode
Remote Diode Resolution
External Diode Current Source
9
bits
µA
µA
IDIODE
High Level
Low Level
250
9.4
325
Diode Current Ratio
25.9
PMBus Pin Thresholds (SMBA, SDA, SCL)
VIL
VIH
Data, Clock Input Low Voltage
Data, Clock Input High Voltage
Data Output Low Voltage
Input Leakage Current
0.9
5.5
0.4
1
V
V
2.1
0
VOL
ILEAK
ISINK = 3 mA
V
SDAI,SMBA,SCL = 5V
µA
Configuration Pin Thresholds (CL, RETRY)
VIH
Threshold Voltage
3
V
ILEAK
Input Leakage Current
CL, RETRY = 5V
5
µA
(4)
Thermal
θJA
θJC
Junction to Ambient
Junction to Case
29
4
°C/W
°C/W
(4) Junction to ambient thermal resistance is highly application and board layout dependent. Specified thermal resistance values for the
package specified is based on a 4-layer, 4"x3", 2/1/1/2 oz. Cu board with 15 vias with 8 mil. diameter under the DAP.
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Typical Performance Characteristics
Unless otherwise specified the following conditions apply: TJ = 25°C, VIN = 48V. All graphs show junction temperature.
VIN Pin Current
Sense Pin Current (Enabled)
8.0
7.5
7.0
6.5
6.0
5.5
5.0
30
29
28
27
26
25
24
23
22
V
= 80V
IN
V
= 48V
IN
V
= 10V
IN
-60 -40 -20
0
20 40 60 80 100120140
-60 -40 -20 0 20 40 60 80 100120140
TEMPERATURE (°C)
TEMPERATURE (°C)
Out Pin Current (Enabled)
Out Pin Current (Disabled)
150
120
90
60
30
0
0
-20
-40
-60
-80
-100
VIN = 80V
VIN = 80V
VIN = 48V
VIN = 48V
VIN = 10V
VIN = 10V
-60 -40 -20
0
20 40 60 80 100120140
-60 -40 -20 0 20 40 60 80 100120140
TEMPERATURE (°C)
TEMPERATURE (°C)
Gate Zener Reverse Bias Voltage (VGATE - VOUT
)
Gate Pin Source Current
18.0
17.8
17.6
17.4
17.2
17.0
-18.0
-18.5
-19.0
-19.5
-20.0
VIN = 10V to 80V
16.8
16.6
16.4
16.2
16.0
-60 -40 -20
0
20 40 60 80 100120140
-60 -40 -20 0 20 40 60 80 100120140
TEMPERATURE (°C)
TEMPERATURE (°C)
VSNS at Power Limit Threshold
RPWR = 75 kΩ
UVLO Threshold
30
25
20
15
10
5
2.50
2.48
2.46
2.44
2.42
VIN = 24V
VIN = 48V
VIN = 10V
VIN = 48V, 80V
VIN = 80V
0
-40 -20
0
20 40 60 80 100 120 140
-60 -40 -20
0
20 40 60 80 100120140
TEMPERATURE (°C)
TEMPERATURE (°C)
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Typical Performance Characteristics (continued)
Unless otherwise specified the following conditions apply: TJ = 25°C, VIN = 48V. All graphs show junction temperature.
UVLO Hysteresis Current
FB Threshold
20.8
20.7
20.6
20.5
20.4
2.48
2.46
2.44
2.42
VIN = 10V to 80V
-60 -40 -20
0
20 40 60 80 100120140
-60 -40 -20 0 20 40 60 80 100120140
TEMPERATURE (°C)
TEMPERATURE (°C)
OVLO Threshold
OVLO Hysteresis
2.48
2.46
2.46
2.44
-18
-20
-22
-24
-26
VIN = 10V to 80V
VIN = 10V to 80V
-60 -40 -20
0
20 40 60 80 100120140
-60 -40 -20
0
20 40 60 80 100120140
TEMPERATURE (°C)
TEMPERATURE (°C)
FB Pin Hysteresis
Current Limit Threshold
-23.0
-23.5
-24.0
-24.5
-25.0
-25.5
-26.0
55
50
45
40
35
30
25
20
CL = GND
CL = VDD
-60 -40 -20
0
20 40 60 80 100120140
-60 -40 -20
0
20 40 60 80 100120140
TEMPERATURE (°C)
TEMPERATURE (°C)
Circuit Breaker Threshold
Reference Voltage
200
180
160
140
120
100
80
2.965
2.960
2.955
2.950
2.945
CL = GND, CB/CL BIT = HIGH
CL = GND, CB/CL BIT = LOW
CL = VDD, CB/CL BIT = LOW
60
40
-60 -40 -20
0
20 40 60 80 100120140
-60 -40 -20
0
20 40 60 80 100120140
TEMPERATURE (°C)
TEMPERATURE (°C)
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Typical Performance Characteristics (continued)
Unless otherwise specified the following conditions apply: TJ = 25°C, VIN = 48V. All graphs show junction temperature.
IIN Measurement Accuracy
(VIN - SENSE = 50 mV)
PIN Measurement Accuracy
(VIN - SENSE = 50 mV)
0.5
0.4
1.0
0.8
0.3
0.6
0.2
0.4
0.1
0.2
0.0
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.2
-0.4
-0.6
-0.8
-1.0
-60 -40 -20
0
20 40 60 80 100120140
-60 -40 -20 0 20 40 60 80 100120140
TEMPERATURE ( °C)
TEMPERATURE (°C)
MOSFET Power Dissipation Limit
vs.
RPWR and RS
(VIN = 48V)
Startup (Insertion Delay)
100 ms/DIV
300
INSERTION
DELAY = 140 ms
Rs = 3 mꢀ
Rs = 5 mꢀ
Rs = 10 mꢀ
Rs = 20 mꢀ
V
(2V/Div)
TIMER
250
200
150
100
50
V
(20V/Div)
IN
V
(20V/Div)
(20V/Div)
GATE
V
OUT
0
0
25
50
75
100 125 150
R (kꢀ)
PWR
Startup (Short circuit VOUT
1s/DIV
)
Startup (1A Load)
50 ms/DIV
V
(2V/Div)
TIMER
V
V
(2V/Div)
TIMER
V
(20V/Div)
(2A/Div)
IN
V
GATE
(20V/Div)
(20V/Div)
IN
RETRY PERIOD = 1.4s
(20V/Div)
V
V
GATE
I
(20V/Div)
IN
OUT
Startup (UVLO/EN, OVLO)
200 ms/DIV
Startup (PGD)
200 ms/DIV
V
(20V/Div)
IN
V
IN
(20V/Div)
V
(20V/Div)
(20V/Div)
GATE
V
PGD
(5V/Div)
V
OUT
V
(20V/Div)
OUT
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Typical Performance Characteristics (continued)
Unless otherwise specified the following conditions apply: TJ = 25°C, VIN = 48V. All graphs show junction temperature.
Current Limit Event (CL = VDD)
Circuit Breaker Event (CL = VDD)
2 ms/DIV
500 µs/DIV
V
(2V/Div)
V
V
(2V/Div)
TIMER
TIMER
V
(20V/Div)
(20V/Div)
GATE
GATE
V
(20V/Div)
OUT
V
(20V/Div)
OUT
I
(4A/Div)
LOAD
CL = 8.6A
CB = 1.94 x CL limit
Retry Event (RETRY = GND)
500 ms/DIV
Latch Off (RETRY = VDD)
200 ms/DIV
V
(2V/Div)
TIMER
V
(2V/Div)
TIMER
V
(20V/Div)
IN
V
OUT
(3V/Div)
V
(20V/Div)
(1A/Div)
OUT
I
(1A/Div)
IN
I
IN
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BLOCK DIAGRAM
LM5066
20 mA
VDD
REG
VDD
2.46V
UV
OV
CHARGE
PUMP
1/30
1/30
26/50 mV
DS
VREF
12 bit
ADC
I
mA
20
Current Limit
Threshold
GATE
4.2 mA
2.97
VRef
115
mA
GATE
CONTROL
16.5V
Current
Limit
Sense
VAUX
V
DS
OUT
Power Limit
Threshold
Current Limit/
Power Limit
Control
Diode
Temp
Sense
DIODE
48/96/193 mV
Circuit Breaker
Threshold
4.8 mA
Insertion
Timer
75 mA
Fault
Timer
20mA
MEASUREMENT/
FAULT REGISTORS
TIMER
1.5 mA
End
Insertion
Time
21mA
TELEMETRY
STATE
MACHINE
SCL
SDAI
ov
uv
2.5 mA
Fault
Discharge
TIMER AND GATE
LOGIC CONTROL
SMBUS
INTERFACE
SDAO
2.46V
2.48V
SMBA
3.9V
1.1V
0.3V
ADDRESS
DECODER
20mA
ADR0
ADR1
ADR2
Enable
POR
AGND
GND
Insertion Timer
POR
7.8V
VIN
8.6V
VIN
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FUNCTIONAL DESCRIPTION
The inline protection functionality of the LM5066 is designed to control the in-rush current to the load upon
insertion of a circuit card into a live backplane or other “hot” power source, thereby limiting the voltage sag on the
backplane’s supply voltage, and the dV/dt of the voltage applied to the load. The effects on other circuits in the
system are minimized by preventing possible unintended resets. A controlled shutdown when the circuit card is
removed can also be implemented using the LM5066.
In addition to a programmable current limit, the LM5066 monitors and limits the maximum power dissipation in
the series pass device to maintain operation within the device Safe Operating Area (SOA). Either current limiting
or power limiting for an extended period of time results in the shutdown of the series pass device. In this event,
the LM5066 can latch off or repetitively retry based on the hardware setting of the RETRY pin. Once started, the
number of retries can be set to none, 1, 2, 4, 8, 16, or infinite. The circuit breaker function quickly switches off the
series pass device upon detection of a severe over-current condition. Programmable under-voltage lockout
(UVLO) and over-voltage lockout (OVLO) circuits shut down the LM5066 when the system input voltage is
outside the desired operating range.
The telemetry capability of the LM5066 provides intelligent monitoring of the input voltage, output voltage, input
current, input power, temperature, and an auxiliary input. The LM5066 also provides a peak capture of the input
power and programmable hardware averaging of the input voltage, current, power, and output voltage. Warning
thresholds which trigger the SMBA pin may be programmed for input and output voltage, current, power and
temperature via the PMBus interface. Additionally, the LM5066 is capable of detecting damage to the external
MOSFET, Q1.
Q
2
VIN
R
S
VOUT
Q
1
D
C
OUT
1
C
IN
Z
1
R
4
SENSE
GATE OUT
DIODE
FB
VIN_K
VIN
VDD
VDD
R
1
R
5
UVLO/EN
R
PG
R
2
PGD
OVLO
LM5066
ADR2
ADR1
ADR0
N/C
N/C
AGND
GND
R
3
RETRY
CL
SMBA
SDAO
SDAI
SMBus
Interface
Auxillary ADC Input
(0V œ 2.97V)
VAUX
SCL
PWR
VDD
VREF
TIMER
R
PWR
C
TIMER
1 mF
1 mF
Figure 1. Typical Application Circuit
Power Up Sequence
The VIN operating range of the LM5066 is 10V to 80V, with a transient capability to 100V. Referring to Figure 1
and Figure 2, as the voltage at VIN initially increases, the external N-channel MOSFET (Q1) is held off by an
internal 115 mA pull-down current at the GATE pin. The strong pull-down current at the GATE pin prevents an
inadvertent turn-on as the MOSFET’s gate-to-drain (Miller) capacitance is charged. Additionally, the TIMER pin is
initially held at ground. When the VIN voltage reaches the POR threshold the insertion time begins. During the
insertion time, the capacitor at the TIMER pin (CT) is charged by a 4.8 µA current source, and Q1 is held off by a
4.2 mA pull-down current at the GATE pin regardless of the input voltage. The insertion time delay allows ringing
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and transients at VIN to settle before Q1 is enabled. The insertion time ends when the TIMER pin voltage reaches
3.9V. CT is then quickly discharged by an internal 1.5 mA pull-down current. The GATE pin then switches on Q1
when VIN exceeds the UVLO threshold. If VIN is above the UVLO threshold at the end of the insertion time, Q1
the GATE pin charge pump sources 20 µA to charge the gate capacitance of Q1. The maximum voltage from the
gate to source of the Q1 is limited by an internal 16.5V zener diode.
As the voltage at the OUT pin increases, the LM5066 monitors the drain current and power dissipation of
MOSFET Q1. In-rush current limiting and/or power limiting circuits actively control the current delivered to the
load. During the in-rush limiting interval (t2 in Figure 2) an internal 75 µA fault timer current source charges CT. If
Q1’s power dissipation and the input current reduce below their respective limiting thresholds before the TIMER
pin reaches 3.9V, the 75 µA current source is switched off, and CT is discharged by the internal 2.5 µA current
sink (t3 in Figure 2). The in-rush limiting will no longer engage unless a current-limit condition occurs.
If the TIMER pin voltage reaches 3.9V before in-rush current limiting or power limiting ceases during t2, a fault is
declared and Q1 is turned off. See the Fault Timer & Restart section for a complete description of the fault mode.
The LM5066 will assert the SMBA pin after the input voltage has exceeded its POR threshold to indicate that the
volatile memory and device settings are in their default state. The CONFIG_PRESET bit within the
STATUS_MFR_SPECIFIC register (80h) indicates default configuration of warning thresholds and device
operation and will remain high until a CLEAR_FAULTS command is received.
V
IN
UVLO
POR
VIN
3.9V
75 mA
2.5 mA
4.8 mA
TIMER
GATE
115 mA
pull-down
4.2 mA pull-down
20 mA source
I
LIMIT
Load
Current
2.46V
FB
PGD
t
t
2
t
3
1
In rush
Limiting
Insertion Time
Normal Operation
Figure 2. Power Up Sequence (Current Limit Only)
Gate Control
A charge pump provides the voltage at the GATE pin to enhance the N-Channel MOSFET’s gate (Q1). During
normal operating conditions (t3 in Figure 2) the gate of Q1 is held charged by an internal 20 µA current source.
The charge pump peak voltage is roughly 13.5V, which will force a VGS across Q1 of 13.5V under normal
operation. When the system voltage is initially applied, the GATE pin is held low by a 115 mA pull-down current.
This helps prevent an inadvertent turn-on of Q1 through its drain-gate capacitance as the applied system voltage
increases.
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During the insertion time (t1 in Figure 2) the GATE pin is held low by a 4.2 mA pull-down current. This maintains
Q1 in the off-state until the end of t1, regardless of the voltage at VIN or UVLO. Following the insertion time,
during t2 in Figure 2 the gate voltage of Q1 is modulated to keep the current or power dissipation level from
exceeding the programmed levels. While in the current or power limiting mode, the TIMER pin capacitor is
charging. If the current and power limiting cease before the TIMER pin reaches 3.9V the TIMER pin capacitor
then discharges, and the circuit begins normal operation. If the in-rush limiting condition persists such that the
TIMER pin reached 3.9V during t2, the GATE pin is then pulled low by the 4.2 mA pull-down current. The GATE
pin is then held low until either a power up sequence is initiated (RETRY pin to VDD), or an automatic retry is
attempted (RETRY pin to GROUND or floating). See the Fault Timer & Restart section. If the system input
voltage falls below the UVLO threshold, or rises above the OVLO threshold, the GATE pin is pulled low by the
4.2 mA pull-down current to switch off Q1.
Current Limit
The current limit threshold is reached when the voltage across the sense resistor RS (VIN to SENSE) exceeds
the internal voltage limit of 26 mV or 50 mV depending on whether the CL pin is connected to VDD or GND,
respectively. In the current limiting condition, the GATE voltage is controlled to limit the current in MOSFET Q1.
While the current limit circuit is active, the fault timer is active as described in the Fault Timer & Restart section. If
the load current falls below the current limit threshold before the end of the Fault Timeout Period, the LM5066
resumes normal operation. If the current limit condition persists for longer than the Fault Timeout Period set by
CT, the IIN OC Fault bit in the STATUS_INPUT (7Ch) register, the INPUT bit in the STATUS_WORD (79h)
register, and IIN_OC/PFET_OP_FAULT bit in the DIAGNOSTIC_WORD (E1h) register will be toggled high and
SMBA pin will be asserted. SMBA toggling can be disabled using the ALERT_MASK (D8h) register. For proper
operation, the RS resistor value should be no higher than 200 mΩ. Higher values may create instability in the
current limit control loop. The current limit threshold pin value may be overridden by setting appropriate bits in
the DEVICE_SETUP register (D9h).
Circuit Breaker
If the load current increases rapidly (for example, the load is short circuited) the current in the sense resistor (RS)
may exceed the current limit threshold before the current limit control loop is able to respond. If the current
exceeds 1.94x or 3.87x (CL = GND) the current limit threshold, Q1 is quickly switched off by the 115 mA pull-
down current at the GATE pin, and a Fault Timeout Period begins. When the voltage across RS falls below the
circuit breaker (CB) threshold, the 115 mA pull-down current at the GATE pin is switched off, and the gate
voltage of Q1 is then determined by the current limit or the power limit functions. If the TIMER pin reaches 3.9V
before the current limiting or power limiting condition ceases, Q1 is switched off by the 4.2 mA pull-down current
at the GATE pin as described in the Fault Timer & Restart section. A circuit breaker event will cause the
CIRCUIT BREAKER FAULT bit in the STATUS_MFR_SPECIFIC (80h) and DIAGNOSTIC_WORD (E1h)
registers to be toggled high and SMBA pin will be asserted unless this feature is disabled using the
ALERT_MASK (D8h) register. The circuit breaker pin configuration may be overridden by setting appropriate bits
in the DEVICE_SETUP (D9h) register.
Power Limit
An important feature of the LM5066 is the MOSFET power limiting. The Power Limit function can be used to
maintain the maximum power dissipation of MOSFET Q1 within the device SOA rating. The LM5066 determines
the power dissipation in Q1 by monitoring its drain-source voltage (SENSE to OUT), and the drain current
through the RS (VIN to SENSE). The product of the current and voltage is compared to the power limit threshold
programmed by the resistor at the PWR pin. If the power dissipation reaches the limiting threshold, the GATE
voltage is modulated to regulate the current in Q1. While the power limiting circuit is active, the fault timer is
active as described in the Fault Timer & Restart section. If the power limit condition persists for longer than the
Fault Timeout Period set by the timer capacitor, CT, the IIN OC Fault bit in the STATUS_INPUT (7Ch) register,
the INPUT bit in the STATUS_WORD (79h) register, and the IIN_OC/PFET_OP_FAULT bit in the
DIAGNOSTIC_WORD (E1h) register will be toggled high and SMBA pin will be asserted unless this feature is
disabled using the ALERT_MASK (D8h) register.
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Fault Timer & Restart
When the current limit or power limit threshold is reached during turn-on, or as a result of a fault condition, the
gate-to-source voltage of Q1 is modulated to regulate the load current and power dissipation in Q1. When either
limiting function is active, a 75 µA fault timer current source charges the external capacitor (CT) at the TIMER pin
as shown in Figure 2 (Fault Timeout Period). If the fault condition subsides during the Fault Timeout Period
before the TIMER pin reaches 3.9V, the LM5066 returns to the normal operating mode and CT is discharged by
the 1.5 mA current sink. If the TIMER pin reaches 3.9V during the Fault Timeout Period, Q1 is switched off by a
4.2 mA pull-down current at the GATE pin. The subsequent restart procedure then depends on the selected retry
configuration.
If the RETRY pin is high, the LM5066 latches the GATE pin low at the end of the Fault Timeout Period. CT is
then discharged to ground by the 2.5 µA fault current sink. The GATE pin is held low by the 4.2 mA pull-down
current until a power up sequence is externally initiated by cycling the input voltage (VIN), or momentarily pulling
the UVLO/EN pin below its threshold with an open-collector or open-drain device as shown in Figure 3. The
voltage at the TIMER pin must be <0.3V for the restart procedure to be effective. The TIMER_LATCHED_OFF
bit in the DIAGNOSTIC_WORD (E1h) register will remain high while the latched off condition persists.
V
IN
VIN
R1
R2
R3
UVLO/EN
Restart
Control
LM5066
OVLO
GND
Figure 3. Latched Fault Restart Control
The LM5066 provides an automatic restart sequence which consists of the TIMER pin cycling between 3.9V and
1.1V seven times after the Fault Timeout Period, as shown in Figure 4. The period of each cycle is determined
by the 75 µA charging current, and the 2.5 µA discharge current, and the value of the capacitor CT. When the
TIMER pin reaches 0.3V during the eighth high-to-low ramp, the 20 µA current source at the GATE pin turns on
Q1. If the fault condition is still present, the Fault Timeout Period and the restart sequence repeat. The RETRY
pin allows selecting no retries or infinite retries. Finer control of the retry behavior can be achieved through the
DEVICE_SETUP (D9h) register. Retry counts of 0, 1, 2, 4, 8, 16 or infinite may be selected by setting the
appropriate bits in the DEVICE_SETUP (D9h) register.
Fault
Detection
I
LIMIT
Load
Current
20 mA
Gate Charge
4.2 mA pulldown
GATE
Pin
mA
2.5
3.9V
75 mA
TIMER
Pin
1.1V
0.3V
1
2
3
7
8
t
Fault Timeout
Period
RESTART
Figure 4. Restart Sequence
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Under-Voltage Lockout (UVLO)
The series pass MOSFET (Q1) is enabled when the input supply voltage (VIN) is within the operating range
defined by the programmable under-voltage lockout (UVLO) and over-voltage lockout (OVLO) levels. Typically
the UVLO level at VIN is set with a resistor divider (R1-R3) as shown in Figure 5. Refering to the Block Diagram
when VIN is below the UVLO level, the internal 20 µA current source at UVLO is enabled, the current source at
OVLO is off, and Q1 is held off by the 4.2 mA pull-down current at the GATE pin. As VIN is increased, raising the
voltage at UVLO above its threshold the 20 µA current source at UVLO is switched off, increasing the voltage at
UVLO, providing hysteresis for this threshold. With the UVLO/EN pin above its threshold, Q1 is switched on by
the 20 µA current source at the GATE pin if the insertion time delay has expired.
See the Application Information section for a procedure to calculate the values of the threshold setting resistors
(R1-R3). The minimum possible UVLO level at VIN can be set by connecting the UVLO/EN pin to VIN. In this
case Q1 is enabled after the insertion time when the voltage at VIN reaches the POR threshold. After power up
an UVLO condition will cause the INPUT bit in the STATUS_WORD (79h) register, the VIN_UV_FAULT bit in the
STATUS_INPUT (7Ch) register, and the VIN_UNDERVOLTAGE_FAULT bit in the DIAGNOSTIC_WORD (E1h)
registers to be toggled high and SMBA pin will be pulled low unless this feature is disabled using the
ALERT_MASK (D8h) register.
Over-Voltage Lockout (OVLO)
The series pass MOSFET (Q1) is enabled when the input supply voltage (VIN) is within the operating range
defined by the programmable under-voltage lockout (UVLO) and over-voltage lockout (OVLO) levels. If VIN raises
the OVLO pin voltage above its threshold, Q1 is switched off by the 4.2 mA pull-down current at the GATE pin,
denying power to the load. When the OVLO pin is above its threshold, the internal 21 µA current source at OVLO
is switched on, raising the voltage at OVLO to provide threshold hysteresis. When VIN is reduced below the
OVLO level Q1 is re-enabled. An OVLO condition will toggle the VIN_OV_FAULT bit in the STATUS_INPUT
(7Ch) register, the INPUT bit in the STATUS_WORD (79h) register and the VIN_OVERVOLTAGE_FAULT bit in
the DIAGNOSTIC_WORD (E1h) register. The SMBA pin will be pulled low unless this feature is disabled using
the ALERT_MASK (D8h) register.
See the Application Information section for a procedure to calculate the threshold setting resistor values.
Shutdown Control
The load current can be remotely switched off by taking the UVLO/EN pin below its threshold with an open
collector or open drain device, as shown in Figure 5. Upon releasing the UVLO/EN pin the LM5066 switches on
the load current with in-rush current and power limiting.
V
IN
VIN
R1
R2
R3
UVLO/EN
Shutdown
Control
LM5066
OVLO
GND
Figure 5. Shutdown Control
Power Good Pin
The Power Good indicator pin (PGD) is connected to the drain of an internal N-channel MOSFET capable of
sustaining 80V in the off-state, and transients up to 100V. An external pull-up resistor is required at PGD to an
appropriate voltage to indicate the status to downstream circuitry. The off-state voltage at the PGD pin can be
higher or lower than the voltages at VIN and OUT. PGD is switched high when the voltage at the FB pin exceeds
the PGD threshold voltage. Typically the output voltage threshold is set with a resistor divider from output to
feedback, although the monitored voltage need not be the output voltage. Any other voltage can be monitored as
long as the voltage at the FB pin does not exceed its maximum rating. Referring to the Block Diagram, when the
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voltage at the FB pin is below its threshold, the 20 µA current source at FB is disabled. As the output voltage
increases, taking FB above its threshold, the current source is enabled, sourcing current out of the pin, raising
the voltage at FB to provide threshold hysteresis. The PGD output is forced low when either the UVLO/EN pin is
below its threshold or the OVLO pin is above its threshold. The status of the PGD pin can be read via the PMBus
interface in either the STATUS_WORD (79h) or DIAGNOSTIC_WORD (E1h) registers.
VDD Sub-Regulator
The LM5066 contains an internal linear sub-regulator which steps down the input voltage to generate a 4.9V rail
used for powering low voltage circuitry. The VDD sub-regulator should be used as the pull-up supply for the CL,
RETRY, ADR2, ADR1, ADR0 pins if they are to be tied high. It may also be used as the pull-up supply for the
PGD and the SMBus signals (SDA, SCL, SMBA). The VDD sub-regulator is not designed to drive high currents
and should not be loaded with other integrated circuits. The VDD pin is current limited to 30mA in order to protect
the LM5066 in the event of a short. The sub-regulator requires a ceramic bypass capacitance having a value of 1
µF or greater to be placed as close to the VDD pin as the PCB layout allows.
Remote Temperature Sensing
The LM5066 is designed to measure temperature remotely using an MMBT3904 NPN transistor. The base and
collector of the MMBT3904 should be connected to the DIODE pin and the emitter to the LM5066 ground. Place
the MMBT3904 near the device that requires temperature sensing. If the temperature of the hot swap pass
MOSFET, Q1, is to be measured, the MMBT3904 should be placed as close to Q1 as the layout allows. The
temperature is measured by means of a change in the diode voltage in response to a step in current supplied by
the DIODE pin. The DIODE pin sources a constant 9.4 µA but pulses 250 µA once every millisecond in order to
measure the diode temperature. Care must be taken in the PCB layout to keep the parasitic resistance between
the DIODE pin and the MMBT3904 low so as not to degrade the measurement. Additionally, a small 1000 pF
bypass capacitor should be placed in parallel with the MMBT3904 to reduce the effects of noise. The
temperature can be read using the READ_TEMPERATURE_1 PMBus command (8Dh). The default limits of the
LM5066 will cause SMBA pin to be pulled low if the measured temperature exceeds 125°C and will disable Q1 if
the temperature exceeds 150°C. These thresholds can be reprogrammed via the PMBus interface using the
OT_WARN_LIMIT (51h) and OT_FAULT_LIMIT (4Fh) commands. If the temperature measurement and
protection capability of the LM5066 are not used, the DIODE pin should be grounded.
Erroneous temperature measurements may result when the device input voltage is below the minimum operating
voltage (10V), due to VREF dropping out below the nominal voltage (2.97V). At higher ambient temperatures,
this measurement could read a value higher than the OT_FAULT_LIMIT, and will trigger a fault, disabling Q1. In
this case, the faults should be removed and the device reset by writing a 0h, followed by an 80h to the
OPERATION (03h) register.
Damaged MOSFET Detection
The LM5066 is able to detect whether the external MOSFET, Q1, is damaged under certain conditions. If the
voltage across the sense resistor exceeds 4mV while the GATE voltage is low or the internal logic indicates that
the GATE should be low, the EXT_MOSFET_SHORTED bit in the STATUS_MFR_SPECIFIC (80h) and
DIAGNOSTIC_WORD (E1h) registers will be toggled high and the SMBA pin will be asserted unless this feature
is disabled using the ALERT_MASK register (D8h). This method effectively determines whether Q1 is shorted
because of damage present between the drain and gate and/or drain and source.
Enabling/Disabling and Resetting
The output can be disabled at any time during normal operation by either pulling the UVLO/EN pin to below its
threshold or the OVLO pin above its threshold, causing the GATE voltage to be forced low with a pulldown
strength of 4.2mA. Toggling the UVLO/EN pin will also reset the LM5066 from a latched-off state due to an over-
current or over-power limit condition which has caused the maximum allowed number of retries to be exceeded.
While the UVLO/EN or OVLO pins can be used to disable the output they have no effect on the volatile memory
or address location of the LM5066. User stored values for address, device operation, and warning and fault
levels programmed via the SMBus are preserved while the LM5066 is powered regardless of the state of the
UVLO/EN and OVLO pins.The output may also be enabled or disabled by writing 80h or 0h to the OPERATION
(03h) register. To re-enable after a fault, the fault condition should be cleared and the OPERATION (03h) register
with 0h and then 80h.
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The SMBus address of the LM5066 is captured based on the states of the ADR0, ADR1, and ADR2 pins (GND,
NC, VDD) during turn on and is latched into a volatile register once VDD has exceeded its POR threshold of
4.1V. Reassigning or postponing the address capture is accomplished by holding the VREF pin to ground.
Pulling the VREF pin low will also reset the logic and erase the volatile memory of the LM5066. Once released,
the VREF pin will charge up to its final value and the address will be latched into a volatile register once the
voltage at the VREF exceeds 2.55V.
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APPLICATION INFORMATION
MMBT3904
Q2
R
S
VIN
3 mÖ
VOUT
IPB027N10N3 G
Q1
Z
1
C
OUT
D
1
5.0SMDJ60A
B380-13-F
R
4
150 kÖ
SENSE
VIN_K
GATE OUT
DIODE
FB
VDD
R
1
VIN
R
5
191 kÖ
10 kÖ
R
PG
UVLO/EN
100 kÖ
R
2
7.5 kÖ
PGD
OVLO
ADR2
ADR1
ADR0
N/C
N/C
N/C
PMBus Address = 40h
Continuous Retry
50 mV Current Limit
R
3
AGND
GND
8.66 kÖ
LM5066
RETRY
CL
SMBA
SDAO
SDAI
SCL
Auxillary ADC Input
(0V œ 2.97V)
VAUX
VDD VREF
PWR
TIMER
R
PWR
16.2 kÖ
C
TIMER
0.15 mF
1 mF
1 mF
Figure 6. Typical Application Circuit
DESIGN-IN PROCEDURE
Refer to Figure 6 for Typical Application Circuit. The following is the step-by-step procedure for hardware design
of the LM5066. This procedure refers to section numbers that provide detailed information on the following
design steps. The recommended design-in procedure is as follows:
MOSFET Selection: Determine MOSFET based on breakdown voltage, current and power ratings.
Current Limit, RS: Determine the current limit threshold (ILIM). This threshold must be higher than the normal
maximum load current, allowing for tolerances in the current sense resistor value and the LM5066 Current Limit
threshold voltage. Use Equation 1 to determine the value for RS.
Power Limit Threshold: Determine the maximum allowable power dissipation for the series pass MOSFET (Q1),
using the device’s SOA information. Use Equation 2 to determine the value for RPWR. Note that many MOSFET
manufacturers do not accurately specify the device SOA so it is usually beneficial to choose a conservative value
when selecting RPWR
.
Turn-on Time and TIMER Capacitor, CT: Determine the value for the timing capacitor at the TIMER pin (CT)
using Equation 7 and Equation 8. The fault timeout period (tFAULT) MUST be longer than the circuit’s turn-on time.
The turn-on time can be estimated using the equations in the TURN-ON TIME section, but should be verified
experimentally. Review the resulting insertion time and the restart timing if retry is enabled.
UVLO, OVLO: Choose option A, B, C, or D from the UVLO, OVLO section to set the UVLO and OVLO
thresholds and hysteresis. Use the procedure for the appropriate option to determine the resistor values at the
UVLO/EN and OVLO pins.
Power Good: Choose the appropriate output voltage and calculate the required resistor divider from the output
voltage to the FB pin. Choose either VDD or OUT to connect a properly sized pull-up resistor for the Power Good
output (PGD).
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Refer to Programming Guide section: After all hardware design is complete, refer to the programming guide
for a step by step procedure regarding software.
MOSFET SELECTION
It is recommended that the external MOSFET (Q1) selection is based on the following criteria:
- The BVDSS rating should be greater than the maximum system voltage (VIN), plus ringing and transients which
can occur at VIN when the circuit card, or adjacent cards, are inserted or removed.
- The maximum continuous current rating should be based on the current limit threshold (for example, 26 mV/RS
for CL = VDD), not the maximum load current, since the circuit can operate near the current limit threshold
continuously.
- The Pulsed Drain Current spec (IDM) must be greater than the current threshold for the circuit breaker function
(48/96/193 mV/RS, depending on CL and CB configuration).
- The SOA (Safe Operating Area) chart of the device, and the thermal properties, should be used to determine
the maximum power dissipation threshold set by the RPWR resistor. The programmed maximum power dissipation
should have a reasonable margin from the maximum power defined by the MOSFET’s SOA curve. If the device
is set to infinitely retry, the MOSFET will be repeatedly stressed during fault restart cycles. The MOSFET
manufacturer should be consulted for guidelines.
2
- RDS(on) should be sufficiently low such that the power dissipation at maximum load current (ILIM x RDS(on)) does
not raise its junction temperature above the manufacturer’s recommendation.
- The gate-to-source voltage provided by the LM5066 can be as high as 16.5V, limited by the internal zener
diode from GATE to OUT. Q1 must be able to tolerate this voltage for its VGS rating. An additional zener diode
can be added from GATE to OUT to lower this voltage and limit the peak VGS. The zener diode’s forward current
rating must be at least 110 mA to conduct the GATE pull-down current when a circuit breaker condition is
detected.
CURRENT LIMIT (RS)
The LM5066 monitors the current in the external MOSFET Q1 by measuring the voltage across the sense
resistor (RS), connected from VIN to SENSE. The required resistor value is calculated from:
(1)
where ILIM is the desired current limit threshold. If the voltage across RS reaches VCL, the current limit circuit
modulates the gate of Q1 to regulate the current at ILIM. While the current limiting circuit is active, the fault timer is
active as described in the Fault Timer & Restart section. For proper operation, RS must be less than 200 mΩ.
VCL can be set to either 26 mV or 50 mV via hardware and/or software. This setting defaults to use of CL pin
which, when connected to VDD is 26 mV, or grounded is 50 mV. The value, when powered, can be set via the
PMBus with the MFR_SPECIFIC_DEVICE_SETUP command, which defaults to the 26 mV setting.
Once the desired setting is known, calculate the shunt based on that input voltage and maximum current. While
the maximum load current in normal operation can be used to determine the required power rating for resistor
RS, basing it on the current limit value provides a more reliable design since the circuit can operate near the
current limit threshold continuously. The resistor’s surge capability must also be considered since the circuit
breaker threshold is 1.94 or 3.87 times the current limit threshold.
Connections from RS to the LM5066 should be made using Kelvin techniques. In the suggested layout of
Figure 7 the small pads at the lower corners of the sense resistor connect only to the sense resistor terminals,
and not to the traces carrying the high current. With this technique, only the voltage across the sense resistor is
applied to VIN_K and SENSE, eliminating the voltage drop across the high current solder connections.
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HIGH CURRENT PATH
TO DRAIN OF
MOSFET Q
FROM SYSTEM
INPUT VOLTAGE
SENSE
RESISTOR
1
R
S
VIN
VIN_K
SENSE
Figure 7. Sense Resistor Connections
POWER LIMIT THRESHOLD
The LM5066 determines the power dissipation in the external MOSFET (Q1) by monitoring the drain current (the
current in RS) and the VDS of Q1 (SENSE to OUT pins). The resistor at the PWR pin (RPWR) sets the maximum
power dissipation for Q1, and is calculated from the following equation:
(2)
where PMOSFET(LIM) is the desired power limit threshold for Q1, and RS is the current sense resistor described in
the CURRENT LIMIT (RS) section. For example, if RS is 5 mΩ, VIN = 48V, and the desired power limit threshold
is 50W, RPWR calculates to 24.9 kΩ. If Q1’s power dissipation reaches the threshold Q1’s gate is modulated to
regulate the load current, keeping Q1’s power from exceeding the threshold. For proper operation of the power
limiting feature, RPWR must be ≤150 kΩ. While the power limiting circuit is active, the fault timer is active as
described in the Fault Timer & Restart section. Typically, power limit is reached during startup, or if the output
voltage falls due to a severe overload or short circuit. The programmed maximum power dissipation should have
a reasonable margin from the maximum power defined by the SOA chart, especially if retry is enabled, because
the MOSFET will be repeatedly stressed during fault restart cycles. The MOSFET manufacturer should be
consulted for guidelines. If the application does not require use of the power limit function the PWR pin can be
left open. The accuracy of the power limit function at turn-on may degrade if a very low power dissipation limit is
set. The reason for this caution is that the voltage across the sense resistor, which is monitored and regulated by
the power limit circuit, is lowest at turn-on when the regulated current is at a minimum. The voltage across the
sense resistor during power limit can be expressed as follows:
(3)
where ILIM is the current in RS, and VDS is the voltage across Q1. For example, if the power limit is set at 75W
with RS = 5 mΩ, and VDS = 48V the sense resistor voltage calculates to 7.8 mV, which is comfortably regulated
by the LM5066. However, if the power limit is set lower (for example, 25W), the sense resistor voltage calculates
to 2.6 mV. At this low level noise and offsets within the LM5066 may degrade the power limit accuracy. To
maintain accuracy, the sense resistor voltage should not be less than 3 mV.
TURN-ON TIME
The output turn-on time depends on whether the LM5066 operates in current limit, or in both power limit and
current limit, during turn-on.
A) Turn-on with current limit only: The current limit threshold (ILIM) is determined by the current sense resistor
(RS). If the current limit threshold is less than the current defined by the power limit threshold at maximum VDS
the circuit operates only at the current limit threshold during turn-on. Referring to Figure 8A, as the load current
reaches ILIM, the gate-to-source voltage is controlled at VGSL to maintain the current at ILIM. As the output voltage
reaches its final value (VDS ≊ 0V) the drain current reduces to its normal operating value. The time for the OUT
pin voltage to transition from zero volts to VIN is equal to:
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(4)
where CL is the load capacitance. For example, if VIN = 48V, CL = 200 µF, and ILIM = 5A, tON calculates to 12 ms.
The maximum instantaneous power dissipated in the MOSFET is 12W. This calculation assumes the time from t1
to t2 in Figure 9(a) is small compared to tON, the load does not draw any current until after the output voltage has
reached its final value, and PGD switches high (Figure 8A). The Fault Timeout Period must be set longer than
tON to prevent a fault shutdown before the turn-on sequence is complete.
If the load draws current during the turn-on sequence (Figure 8B), the turn-on time is longer than the above
calculation, and is approximately equal to:
(5)
where RL is the load resistance. The Fault Timeout Period must be set longer than tON to prevent a fault
shutdown before the turn-on sequence is complete.
R
S
Q1
V
IN
SENSE
OUT
PGD
VIN_K
LM5066
C
L
GND
R
L
GND
A. No Load Current During Turn-On
R
S
Q1
V
IN
OUT
VIN _K
SENSE
C
L
R
L
LM5066
GND
GND
B. Load Draws Current During Turn-On
Figure 8. Current During Turn-On
B) Turn-On with Power Limit and Current Limit: The maximum allowed power dissipation in Q1 (PMOSFET(LIM)
)
is defined by the resistor at the PWR pin, and the current sense resistor RS. See the POWER LIMIT
THRESHOLD section. If the current limit threshold (ILIM) is higher than the current defined by the power limit
threshold at maximum VDS (PMOSFET(LIM)/VIN) the circuit operates initially in the power limit mode when the VDS of
Q1 is high, and then transitions to current limit mode as the current increases to ILIM and VDS decreases.
Assuming the load (RL) is not connected during turn-on, the time for the output voltage to reach its final value is
approximately equal to:
(6)
For example, if VIN = 48V, CL = 200 µF, ILIM = 1A, and PMOSFET(LIM) = 10W, tON calculates to ≊24 ms, and the
initial current level (IP) is approximately 0.208A. The Fault Timeout Period must be set longer than tON
.
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V
V
IN
IN
V
DS
V
DS
Drain Current
Drain Current
I
I
LIM
LIM
I
P
0
0
V
GATE
V
GATE
Gate-to-Source Voltage
V
GSL
V
GSL
V
TH
V
TH
t
t
ON
ON
0
0
t3
t1 t2
0
0
a) Current Limit Only
b) Power Limit and Current Limit
Figure 9. MOSFET Power Up Waveforms
TIMER CAPACITOR, CT
The TIMER pin capacitor (CT) sets the timing for the insertion time delay, fault timeout period, and the restart
timing of the LM5066.
A) Insertion Delay -Upon applying the system voltage (VIN) to the circuit, the external MOSFET (Q1) is held off
during the insertion time (t1 in Figure 2) to allow ringing and transients at VIN to settle. Since each backplane’s
response to a circuit card plug-in is unique, the worst case settling time must be determined for each application.
The insertion time starts when VIN reaches the POR threshold, at which time the internal 4.8 µA current source
charges CT from 0V to 3.9V. The required capacitor value is calculated from:
(7)
For example, if the desired insertion delay is 250 ms, CT calculates to 0.3 µF. At the end of the insertion delay,
CT is quickly discharged by a 1.5 mA current sink.
B) Fault Timeout Period -During in-rush current limiting or upon detection of a fault condition where the current
limit and/or power limit circuits regulate the current through Q1, the fault timer current source (75 µA) is switched
on to charge CT. The Fault Timeout Period is the time required for the TIMER pin voltage to reach 3.9V, at which
time Q1 is switched off. The required capacitor value for the desired Fault Timeout Period tFAULT is calculated
from:
(8)
For example, if the desired Fault Timeout Period is 15 ms, CT calculates to 0.3 µF. CT is discharged by the 2.5
µA current sink at the end of the Fault Timeout Period. After the Fault Timeout Period, if retry is disabled, the
LM5066 latches the GATE pin low until a power up sequence is initiated by external circuitry. When the Fault
Timeout Period of the LM5066 expires, a restart sequence starts as described below (Restart Timing). During
consecutive cycles of the restart sequence, the fault timeout period is shorter than the initial fault time out period
described above by approximately 8% since the voltage at the TIMER pin starts ramping up from 0.3V rather
than ground.
Since the LM5066 normally operates in power limit and/or current limit during a power up sequence, the Fault
Timeout Period MUST be longer than the time required for the output voltage to reach its final value. See the
TURN-ON TIME section.
C) Restart Timing For the LM5066, after the Fault Timeout Period described above, CT is discharged by the 2.5
µA current sink to 1.1V. The TIMER pin then cycles through seven additional charge/discharge cycles between
1.1V and 3.9V as shown in Figure 4. The restart time ends when the TIMER pin voltage reaches 0.3V during the
final high-to-low ramp. The restart time, after the Fault Timeout Period, is equal to:
(9)
= CT x 9.5 x 106
(10)
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For example, if CT = 0.8 µF, tRESTART = 7.9 seconds. At the end of the restart time, Q1 is switched on. If the fault
is still present, the fault timeout and restart sequence repeats. The on-time duty cycle of Q1 is approximately
0.5% in this mode.
UVLO, OVLO
By programming the UVLO and OVLO thresholds the LM5066 enables the series pass device (Q1) when the
input supply voltage (VIN) is within the desired operational range. If VIN is below the UVLO threshold, or above
the OVLO threshold, Q1 is switched off, denying power to the load. Hysteresis is provided for each threshold.
Option A: The configuration shown in Figure 10 requires three resistors (R1-R3) to set the thresholds.
V
IN
VIN
20 mA
R1
R2
2.48V
TIMER AND
GATE
LOGIC CONTROL
UVLO/EN
OVLO
2.46V
R3
21 mA
LM5066
GND
Figure 10. UVLO and OVLO Thresholds Set By R1-R3
The procedure to calculate the resistor values is as follows:
- Choose the upper UVLO threshold (VUVH), and the lower UVLO threshold (VUVL).
- Choose the upper OVLO threshold (VOVH).
- The lower OVLO threshold (VOVL) cannot be chosen in advance in this case, but is determined after the values
for R1-R3 are determined. If VOVL must be accurately defined in addition to the other three thresholds, see
Option B below. The resistors are calculated as follows:
(11)
(12)
(13)
The lower OVLO threshold is calculated from:
(14)
As an example, assume the application requires the following thresholds: VUVH = 36V, VUVL = 32V, VOVH = 60V.
(15)
(16)
(17)
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The lower OVLO threshold calculates to 55.6V, and the OVLO hysteresis is 4.4V. Note that the OVLO hysteresis
is always slightly greater than the UVLO hysteresis in this configuration. When the R1-R3 resistor values are
known, the threshold voltages and hysteresis are calculated from the following:
(18)
(19)
VUV(HYS) = R1 x 20µA
(20)
(21)
(22)
(23)
VOV(HYS) = (R1 + R2) x 21µA
Option B: If all four thresholds must be accurately defined, the configuration in Figure 11 can be used.
V
IN
VIN
20 mA
R1
UVLO/EN
2.48V
TIMER AND
GATE
R2
R3
R4
LOGIC CONTROL
2.46V
GND
OVLO
LM5066
21 mA
Figure 11. Programming the Four Thresholds
The four resistor values are calculated as follows: - Choose the upper and lower UVLO thresholds (VUVH) and
(VUVL).
(24)
(25)
- Choose the upper and lower OVLO threshold (VOVH) and (VOVL).
(26)
(27)
As an example, assume the application requires the following thresholds: VUVH = 36V, VUVL = 32V, VOVH = 60V,
and VOVL = 56V. Therefore VUV(HYS) = 4V, and VOV(HYS) = 4V. The resistor values are:
R1 = 200 kΩ, R2 = 16.8 kΩ
R3 = 190 kΩ, R4 = 8.1 kΩ
When the R1-R4 resistor values are known, the threshold voltages and hysteresis are calculated from the
following:
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(28)
(29)
(30)
VUV(HYS) = R1 x 20 µA
(31)
(32)
Option C: The minimum UVLO level is obtained by connecting the UVLO/EN pin to VIN as shown in Figure 12.
Q1 is switched on when the VIN voltage reaches the POREN threshold (≊8.6V). The OVLO thresholds are set
using R3, R4. Their values are calculated using the procedure in Option B.
V
IN
VIN
20 mA
10k
2.48V
UVLO/EN
TIMER AND
GATE
R3
R4
LOGIC CONTROL
2.46V
GND
OVLO
LM5066
21 mA
Figure 12. UVLO = POREN
Option D: The OVLO function can be disabled by grounding the OVLO pin. The UVLO thresholds are set as
described in Option B or Option C.
POWER GOOD PIN
When the voltage at the FB pin increases above its threshold the internal pulldown acting on the PGD pin is
disabled allowing PGD to rise to VPGD through the pull-up resistor, RPG, as shown in Figure 14. The pull-up
voltage (VPGD) can be as high as 80V, and can be higher or lower than the voltages at VIN and OUT. VDD is a
convenient choice for VPGD as it allows interface to low voltage logic and avoids glitching on PGD during power-
up. If a delay is required at PGD, suggested circuits are shown in Figure 15. In Figure 15A, capacitor CPG adds
delay to the rising edge, but not to the falling edge. In Figure 15B, the rising edge is delayed by RPG1 + RPG2 and
CPG, while the falling edge is delayed a lesser amount by RPG2 and CPG. Adding a diode across RPG2
(Figure 15C) allows for equal delays at the two edges, or a short delay at the rising edge and a long delay at the
falling edge.
Setting the output threshold for the PGD pin requires two resistors (R4, R5) as shown in Figure 13. While
monitoring the output voltage is shown in Figure 13, R4 can be connected to any other voltage which requires
monitoring.
The resistor values are calculated as follows:
Choose the upper and lower threshold (VPGDH) and (VPGDL) at VOUT
.
(33)
(34)
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As an example, assume the application requires the following thresholds: VPGDH = 40V, and VPGDL = 38V.
Therefore VPGD(HYS) = 2V. The resistor values are:
R4 = 100 kΩ, R5 = 6.55 kΩ
When the R4 and R5 resistor values are known, the threshold voltages and hysteresis are calculated from the
following:
2.46V x (R4 + R5)
VPGDH
=
R5
VPGDL = 2.46V + [R4 x (2.46V - 20 mA)]
R5
VPGD(HYS) = R4 x 20 mA
(35)
Q1
V
OUT
OUT
GATE
LM5066
R4
2.46V
FB
R5
20 mA
PGD
UV
OV
GND
Figure 13. Programming the PGD Threshold
V
PGD
R
PG
LM5066
Power Good
GND
Figure 14. Power Good Output
V
V
PGD
V
PGD
PGD
R
PG1
R
C
R
LM5066
LM5066
LM5066
PG1
PG1
PGD
PGD
PGD
Power
Good
Power
Good
Power
Good
R
R
PG2
PG2
C
C
PG
PG
PG
GND
GND
GND
A) Delay at Rising Edge Only
B) Long Delay at Rising Edge,
Short Delay at Falling Edge
C) Short Delay at Rising Edge and
Long Delay at Falling Edge or
Equal Delays
Figure 15. Adding Delay to the Power Good Output Pin
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SYSTEM CONSIDERATIONS
A) Continued proper operation of the LM5066 hot swap circuit requires a voltage clamping element present on
the supply side of the connector into which the hot swap circuit is plugged in. A TVS is ideal, as depicted in
Figure 16. The TVS is necessary to absorb the voltage transient generated whenever the hot swap circuit shuts
off the load current. If the TVS is not present, inductance in the supply lines will generate a voltage transient at
shut-off which can exceed the absolute maximum rating of the LM5066, resulting in its destruction. For low
current solutions (<2A), a capacitor may be sufficient to limit the voltage surge, however this comes at the
expense of input surge current on card insertion.
If the load powered by the LM5066 hot swap circuit has inductive characteristics, a Schottky diode is required
across the LM5066’s output, along with some load capacitance. The capacitance and the diode are necessary to
limit the negative excursion at the OUT pin when the load current is shut off. If the OUT pin transitions more than
0.3V negative the LM5066 can be permanently damaged. See Figure 16.
R
S
V
IN
Q1
V
OUT
+48V
LIVE
POWER
SOURCE
OUT
C
VIN_K SENSE
LM5066
D
1
VIN
L
Inductive
Load
Z
1
AGND GND
GND
PLUG-IN BOARD
Figure 16. Output Diode Required for Inductive Loads
PC BOARD GUIDELINES
The following guidelines should be followed when designing the PC board for the LM5066:
- Place the LM5066 close to the board’s input connector to minimize trace inductance from the connector to the
MOSFET.
- Place a TVS, Z1, directly adjacent to the VIN and GND pins of the LM5066 to help minimize voltage transients
which may occur on the input supply line. The TVS should be chosen such that the peak VIN is just lower the
TVS reverse-bias voltage. Transients of 20 volts or greater over the nominal input voltage can easily occur when
the load current is shut off. A small capacitor may be sufficient for low current sense applications (I < 2A). It is
recommended to test the VIN input voltage transient performance of the circuit by current limiting or shorting the
load and measuring the peak input voltage transient.
- Place a 1 µF ceramic capacitor as close as possible to VREF pin.
- Place a 1 µF ceramic capacitor as close as possible to VDD pin.
- Minimize the inductance between the VIN and VIN_K pins. There are anti-parallel diodes between these pins so
any voltage greater than 0.3V in either polarity will cause significant current flow through the diodes, which can
result in device failure. Do not place any resistors between these two nodes.
- Minimize the impedance between the VIN_K and SENSE pins. There are anti-parallel diodes between these
pins so any voltage greater than 0.3V in either polarity will cause significant current flow through the diodes,
which can result in device failure.
- The sense resistor (RS) should be placed close to the LM5066. A trace should connect the VIN pad and Q1 pad
of the sense resistor to VIN_K and SENSE pins, respectively. Connect RS using the Kelvin techniques shown in
Figure 7.
- The high current path from the board’s input to the load (via Q1), and the return path, should be parallel and
close to each other to minimize loop inductance.
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- The AGND and GND connections should be connected at the pins of the device.The ground connections for
the various components around the LM5066 should be connected directly to each other, and to the LM5066’s
GND and AGND pin connection, and then connected to the system ground at one point. Do not connect the
various component grounds to each other through the high current ground line.
- Provide adequate thermal sinking for the series pass device (Q1) to help reduce stresses during turn-on and
turn-off.
- The board’s edge connector can be designed such that the LM5066 detects via the UVLO/EN pin that the
board is being removed, and responds by turning off the load before the supply voltage is disconnected. For
example, in Figure 17, the voltage at the UVLO/EN pin goes to ground before VIN is removed from the LM5066
as a result of the shorter edge connector pin. When the board is inserted into the edge connector, the system
voltage is applied to the LM5066’s VIN pin before the UVLO voltage is taken high, thereby allowing the LM5066
to turn on the output in a controlled fashion.
GND
To
Load
V
IN
R
S
Z1/C1
PGD
PWR
TIMER
RETRY
FB
OUT
GATE
SENSE
VIN_K
VIN
UVLO/EN
OVLO
AGND
GND
SDAI
SDAO
SCL
R1
R2
R3
CL
VDD
ADR0
ADR1
ADR2
VAUX
DIODE
VREF
SMBA
LM5066
MMBT3904
CARD EDGE
CONNECTOR
PLUG-IN CARD
Figure 17. Recommended Board Connector Design
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PMBUS™ COMMAND SUPPORT
The device features an SMBus interface that allows the use of PMBus commands to set warn levels, error
masks, and get telemetry on VIN, VOUT, IIN, VAUX, and PIN. The supported PMBus commands are shown in
Table 1.
Table 1. Supported PMBus Commands
Number
Default
Code
Name
Function
R/W
Of Data
Bytes
Value
01h
03h
OPERATION
Retrieves or stores the operation status.
R/W
1
0
80h
CLEAR_FAULTS
Clears the status registers and re-arms the Black Box
registers for updating.
Send
Byte
19h
43h
4Fh
CAPABILITY
VOUT_UV_WARN_LIMIT
OT_FAULT_LIMIT
Retrieves the device capability.
R
1
2
2
B0h
Retrieves or stores output under-voltage warn limit threshold.
Retrieves or stores over temperature fault limit threshold.
R/W
R/W
0000h
0960h
(150°C)
51h
OT_WARN_LIMIT
Retrieves or stores over temperature warn limit threshold.
R/W
2
07D0h
(125°C)
57h
58h
78h
79h
7Ah
7Ch
7Dh
7Eh
80h
VIN_OV_WARN_LIMIT
VIN_UV_WARN_LIMIT
STATUS_BYTE
Retrieves or stores input over-voltage warn limit threshold.
Retrieves or stores input under-voltage warn limit threshold.
Retrieves information about the parts operating status.
Retrieves information about the parts operating status.
Retrieves information about output voltage status.
Retrieves information about input status.
R/W
R/W
R
2
2
1
2
1
1
1
1
1
0FFFh
0000h
49h
STATUS_WORD
R
3849h
00h
STATUS_VOUT
R
STATUS_INPUT
R
10h
STATUS_TEMPERATURE
STATUS_CML
Retrieves information about temperature status.
Retrieves information about communications status.
R
00h
R
00h
STATUS_MFR_SPECIFIC
Retrieves information about circuit breaker and MOSFET
shorted status.
R
10h
88h
8Bh
8Dh
99h
READ_VIN
READ_VOUT
Retrieves input voltage measurement.
Retrieves output voltage measurement.
R
R
R
R
2
2
2
3
0000h
0000h
0190h
READ_TEMPERATURE_1
MFR_ID
Retrieves temperature measurement.
Retrieves manufacturer ID in ASCII characters (NSC).
4Eh
53h
43h
9Ah
MFR_MODEL
Retrieves Part number in ASCII characters. (LM5066\0\0).
R
8
4Ch
4Dh
35h
30h
36h
36h
0h
0h
9Bh
D0h
D1h
D2h
D3h
D4h
D5h
MFR_REVISION
Retrieves part revision letter/number in ASCII (for example,
AA).
R
R
2
2
2
2
2
2
2
41h
41h
MFR_SPECIFIC_00
READ_VAUX
Retrieves auxiliary voltage measurement.
0000h
0000h
0000h
0FFFh
0FFFh
0000h
MFR_SPECIFIC_01
MFR_READ_IIN
Retrieves input current measurement.
R
MFR_SPECIFIC_02
MFR_READ_PIN
Retrieves input power measurement.
R
MFR_SPECIFIC_03
MFR_IIN_OC_WARN_LIMIT
Retrieves or stores input current limit warn threshold.
Retrieves or stores input power limit warn threshold.
Retrieves measured peak input power measurement.
R/W
R/W
R
MFR_SPECIFIC_04
MFR_PIN_OP_WARN_LIMIT
MFR_SPECIFIC_05
READ_PIN_PEAK
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Table 1. Supported PMBus Commands (continued)
Number
Of Data
Bytes
Default
Value
Code
D6h
D7h
D8h
D9h
DAh
Name
Function
R/W
MFR_SPECIFIC_06
CLEAR_PIN_PEAK
Resets the contents of the peak input power register to zero.
Send
Byte
0
MFR_SPECIFIC_07
GATE_MASK
Allows the user to disable MOSFET gate shutdown for
various fault conditions.
R/W
R/W
R/W
R
1
0000h
0820h
0000h
MFR_SPECIFIC_08
ALERT_MASK
Retrieves or stores user SMBA fault mask.
2
MFR_SPECIFIC_09
DEVICE_SETUP
Retrieves or stores information about number of retry
attempts.
1
MFR_SPECIFIC_10
BLOCK_READ
Retrieves most recent diagnostic and telemetry information in
a single transaction.
12
0190h
0000h
0000h
0000h
0000h
0000h
DBh
DCh
DDh
DEh
DFh
E0h
MFR_SPECIFIC_11
SAMPLES_FOR_AVG
Exponent value AVGN for number of samples to be averaged
(N = 2AVGN), range = 00h to 0Ch .
R/W
R
1
2
00h
MFR_SPECIFIC_12
READ_AVG_VIN
Retrieves averaged input voltage measurement.
Retrieves averaged output voltage measurement.
Retrieves averaged input current measurement.
Retrieves averaged input power measurement.
0000h
0000h
0000h
0000h
MFR_SPECIFIC_13
READ_AVG_VOUT
R
2
MFR_SPECIFIC_14
READ_AVG_IIN
R
2
MFR_SPECIFIC_15
READ_AVG_PIN
R
2
MFR_SPECIFIC_16
BLACK_BOX_READ
Captures diagnostic and telemetry information which are
latched when the first SMBA event after faults are cleared.
R
12
0000h
0000h
0000h
0000h
0000h
0000h
E1h
E2h
MFR_SPECIFIC_17
DIAGNOSTIC_WORD_READ
Manufacturer-specific parallel of the STATUS_WORD to
convey all FAULT/WARN data in a single transaction.
R
R
2
08E0h
MFR_SPECIFIC_18
AVG_BLOCK_READ
Retrieves most recent average telemetry and diagnostic
information in a single transaction.
12
0000h
0000h
0000h
0000h
0000h
0000h
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STANDARD PMBUS COMMANDS
OPERATION (01h)
The OPERATION command is a standard PMBus command that controls the MOSFET switch. This command
may be used to switch the MOSFET ON and OFF under host control. It is also used to re-enable the MOSFET
after a fault triggered shutdown. Writing an OFF command, followed by an ON command, will clear all faults and
re-enable the device. Writing only an ON after a fault-triggered shutdown will not clear the fault registers or re-
enable the device. The OPERATION command is issued with the write byte protocol.
Table 2. Recognized OPERATION Command Values
Value
80h
Meaning
Default
80h
Switch ON
Switch OFF
00h
n/a
CLEAR FAULTS (03h)
The CLEAR_FAULTS command is a standard PMBus command that resets all stored warning and fault flags
and the SMBA signal. If a fault or warning condition still exists when the CLEAR_FAULTS command is issued,
the SMBA signal may not clear or will re-assert almost immediately. Issuing a CLEAR_FAULTS command will
not cause the MOSFET to switch back on in the event of a fault turnoff - that must be done by issuing an
OPERATION command after the fault condition is cleared. This command uses the PMBus send byte protocol.
CAPABILITY (19h)
The CAPABILITY command is a standard PMBus command that returns information about the PMBus functions
supported by the LM5066. This command is read with the PMBus read byte protocol.
Table 3. CAPABILITY Register
Value
Meaning
Default
B0h
Supports Packet Error Check, 400Kbits/sec, B0h
Supports SMBus Alert
VOUT_UV_WARN_LIMIT (58h)
The VOUT_UV_WARN_LIMIT command is a standard PMBus command that allows configuring or reading the
threshold for the VOUT Under-voltage Warning detection. Reading and writing to this register should use the
coefficients shown in Table 41. Accesses to this command should use the PMBus read or write word protocol. If
the measured value of VOUT falls below the value in this register, VOUT UV Warn flags are set and the SMBA
signal is asserted.
Table 4. VOUT_UV_WARN_LIMIT Register
Value
Meaning
Default
1h – 0FFFh
VOUT Under-voltage Warning detection
threshold
0000h (disabled)
0000h
VOUT Under-voltage Warning disabled
n/a
OT_FAULT_LIMIT (4Fh)
The OT_FAULT_LIMIT command is a standard PMBus command that allows configuring or reading the threshold
for the overtemperature fault detection. Reading and writing to this register should use the coefficients shown in
Table 41. Accesses to this command should use the PMBus read or write word protocol. If the measured
temperature exceeds this value, an overtemperature fault is triggered and the MOSFET is switched off, OT
FAULT flags set, and the SMBA signal asserted. After the measured temperature falls below the value in this
register, the MOSFET may be switched back on with the OPERATION command. A single temperature
measurement is an average of 16 round-robin cycles; therefore, the minimum temperature fault detection time is
16 ms.
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Table 5. OT_FAULT_LIMIT Register
Value
Meaning
Default
0h – 0FFEh
0FFFh
Overtemperature Fault threshold value
Overtemperature Fault detection disabled
0960h (150°C)
n/a
OT_WARN_LIMIT (51h)
The OT_WARN_LIMIT command is a standard PMBus command that allows configuring or reading the threshold
for the overtemperature warning detection. Reading and writing to this register should use the coefficients shown
in Table 41. Accesses to this command should use the PMBus read or write word protocol. If the measured
temperature exceeds this value, an Overtemperature warning is triggered and the OT WARN flags set in the
respective registers and the SMBA signal asserted. A single temperature measurement is an average of 16
round-robin cycles; therefore, the minimum temperature warn detection time is 16 ms.
Table 6. OT_WARN_LIMIT Register
Value
Meaning
Default
0h – 0FFEh
0FFFh
Overtemperature Warn Threshold Value
Overtemperature Warn detection disabled
07D0h (125°C)
n/a
VIN_OV_WARN_LIMIT (57h)
The VIN_OV_WARN_LIMIT command is a standard PMBus command that allows configuring or reading the
threshold for the VIN over-voltage warning detection. Reading and writing to this register should use the
coefficients shown in Table 41. Accesses to this command should use the PMBus read or write word protocol. If
the measured value of VIN rises above the value in this register, VIN OV Warn flags are set in the respective
registers and the SMBA signal is asserted.
Table 7. VIN_OV_WARN_LIMIT Register
Value
Meaning
Default
0h – 0FFEh
VIN Over-voltage Warning detection
threshold
0FFFh (disabled)
0FFFh
VIN Over-voltage Warning disabled
n/a
VIN_UV_WARN_LIMIT (58h)
The VIN_UV_WARN_LIMIT command is a standard PMBus command that allows configuring or reading the
threshold for the VIN under-voltage warning detection. Reading and writing to this register should use the
coefficients shown in Table 41. Accesses to this command should use the PMBus read or write word protocol. If
the measured value of VIN falls below the value in this register, VIN UV Warn flags are set in the respective
register, and the SMBA signal is asserted.
Table 8. VIN_UV_WARN_LIMIT Register
Value
Meaning
Default
1h – 0FFFh
VIN Under-voltage Warning detection
threshold
0000h (disabled)
0000h
VIN Under-voltage Warning disabled
n/a
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STATUS_BYTE (78h)
The STATUS BYTE is a standard PMBus command that returns the value of a number of flags indicating the
state of the LM5066. Accesses to this command should use the PMBus read byte protocol. To clear bits in this
register, the underlying fault should be removed on the system and a CLEAR_FAULTS command issued.
Table 9. STATUS_BYTE Definitions
Bit
7
NAME
BUSY
OFF
Meaning
Default
Not Supported, always 0
0
1
6
This bit is asserted if the MOSFET is not switched on
for any reason.
5
4
3
2
1
0
VOUT OV
IOUT OC
Not Supported, always 0
Not Supported, always 0
0
0
1
0
0
1
VIN UV Fault
TEMPERATURE
CML
A VIN Under-voltage Fault has occurred
A Temperature Fault or Warning has occurred
A Communication Fault has occurred
A fault or warning not listed in bits [7:1] has occurred
None of the Above
STATUS_WORD (79h)
The STATUS_WORD command is a standard PMBus command that returns the value of a number of flags
indicating the state of the LM5066. Accesses to this command should use the PMBus read word protocol. To
clear bits in this register, the underlying fault should be removed and a CLEAR _FAULTS command issued. The
INPUT and VIN UV flags will default to 1 on startup, however, they will be cleared to 0 after the first time the
input voltage exceeds the resistor-programmed UVLO threshold.
Table 10. STATUS_WORD Definitions
Bit
15
14
13
12
11
10
9
NAME
VOUT
Meaning
An output voltage fault or warning has occurred
Not Supported, always 0
Default
0
0
1
1
1
0
0
0
0
1
IOUT/POUT
INPUT
An input voltage or current fault has occurred
A Manufacturer Specific Fault or Warning has occurred
The Power Good signal has been negated
Not Supported, always 0
MFR
POWER GOOD
FANS
OTHER
UNKNOWN
BUSY
Not Supported, always 0
8
Not Supported, always 0
7
Not Supported, always 0
6
OFF
This bit is asserted if the MOSFET is not switched on for
any reason.
5
4
3
2
1
0
VOUT OV
IOUT OC
Not Supported, always 0
Not Supported, always 0
0
0
1
0
0
1
VIN UV
A VIN Under-voltage Fault has occurred
A Temperature Fault or Warning has occurred
A Communication Fault has occurred
A fault or warning not listed in bits [7:1] has occurred
TEMPERATURE
CML
None of the Above
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STATUS_VOUT (7Ah)
The STATUS_VOUT command is a standard PMBus command that returns the value of the VOUT UV Warn
flag. Accesses to this command should use the PMBus read byte protocol. To clear bits in this register, the
underlying fault should be cleared and a CLEAR_FAULTS command issued.
Table 11. STATUS_VOUT Definitions
Bit
7
NAME
Meaning
Not Supported, always 0
Default
VOUT OV Fault
VOUT OV Warn
VOUT UV Warn
VOUT UV Fault
VOUT Max
0
0
0
0
0
0
0
0
6
Not Supported, always 0
5
A VOUT Under-voltage Warning has occurred
Not Supported, always 0
4
3
Not Supported, always 0
2
TON Max Fault
TOFF Max Fault
VOUT Tracking Error
Not Supported, always 0
1
Not Supported, always 0
0
Not Supported, always 0
STATUS_INPUT (7Ch)
The STATUS_INPUT command is a standard PMBus command that returns the value of a number of flags
related to input voltage, current, and power. Accesses to this command should use the PMBus read byte
protocol. To clear bits in this register, the underlying fault should be cleared and a CLEAR_FAULTS command
issued. The VIN UV Warn flag will default to 1 on startup, however, it will be cleared to 0 after the first time the
input voltage increases above the resistor-programmed UVLO threshold.
Table 12. STATUS_INPUT Definitions
Bit
7
NAME
VIN OV Fault
VIN OV Warn
VIN UV Warn
VIN UV Fault
Insufficient Voltage
IIN OC Fault
Meaning
Default
A VIN Over-voltage Fault has occurred
A VIN Over-voltage Warning has occurred
A VIN Under-voltage Warning has occurred
A VIN Under-voltage Fault has occurred
Not Supported, always 0
0
0
1
0
0
0
0
0
6
5
4
3
2
An IIN Over-current Fault has occurred
An IIN Over-current Warning has occurred
A PIN Over-power Warning has occurred
1
IIN OC Warn
PIN OP Warn
0
STATUS_TEMPERATURE (7dh)
The STATUS_TEMPERATURE is a standard PMBus command that returns the value of the of a number of flags
related to the temperature telemetry value. Accesses to this command should use the PMBus read byte protocol.
To clear bits in this register, the underlying fault should be cleared and a CLEAR_FAULTS command issued.
Table 13. STATUS_TEMPERATURE Definitions
Bit
7
NAME
Overtemp Fault
Overtemp Warn
Undertemp Warn
Undertemp Fault
reserved
Meaning
An Overtemperature Fault has occurred
An Overtemperature Warning has occurred
Not Supported, always 0
Default
0
0
0
0
0
0
0
0
6
5
4
Not Supported, always 0
3
Not Supported, always 0
2
reserved
Not Supported, always 0
1
reserved
Not Supported, always 0
0
reserved
Not Supported, always 0
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STATUS_CML (7Eh)
The STATUS_CML is a standard PMBus command that returns the value of a number of flags related to
communication faults. Accesses to this command should use the PMBus read byte protocol. To clear bits in this
register, a CLEAR_FAULTS command should be issued.
Table 14. STATUS_CML Definitions
Bit
7
NAME
Default
Invalid or unsupported command received
Invalid or unsupported data received
Packet Error Check failed
0
0
0
0
0
0
0
0
6
5
4
Not supported, always 0
3
Not supported, always 0
2
Not supported, always 0
1
Miscellaneous communications fault has occurred
Not supported, always 0
0
STATUS_MFR_SPECIFIC (80h)
The STATUS_MFR_SPECIFIC command is a standard PMBus command that contains manufacturer specific
status information. Accesses to this command should use the PMBus read byte protocol. To clear bits in this
register, the underlying fault should be removed and a CLEAR_FAULTS command should be issued.
Table 15. STATUS_MFR_SPECIFIC Definitions
Bit
7
Meaning
Default
Circuit breaker fault
0
0
0
1
0
0
0
0
6
Ext. MOSFET shorted fault
Not Supported, Always 0
Defaults loaded
5
4
3
Not supported: Always 0
Not supported: Always 0
Not supported: Always 0
Not supported: Always 0
2
1
0
READ_VIN (88h)
The READ_VIN command is a standard PMBus command that returns the 12-bit measured value of the input
voltage. Reading this register should use the coefficients shown in Table 41. Accesses to this command should
use the PMBus read word protocol. This value is also used internally for the VIN Over and Under Voltage
Warning detection.
Table 16. READ_VIN Register
Value
Meaning
Default
0h – 0FFFh
Measured value for VIN
0000h
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READ_VOUT (8Bh)
The READ_VOUT command is a standard PMBus command that returns the 12-bit measured value of the output
voltage. Reading this register should use the coefficients shown in Table 41. Accesses to this command should
use the PMBus read word protocol. This value is also used internally for the VOUT Under Voltage Warning
detection.
Table 17. READ_VOUT Register
Value
Meaning
Default
0h – 0FFFh
Measured value for VOUT
0000h
READ_TEMPERATURE_1 (8Dh)
The READ_TEMPERATURE_1 command is a standard PMBus command that returns the signed value of the
temperature measured by the external temperature sense diode. Reading this register should use the coefficients
shown in Table 41. Accesses to this command should use the PMBus read word protocol. This value is also
used internally for the Over Temperature Fault and Warning detection. This data has a range of -256°C to +
255°C after the coefficients are applied.
Table 18. READ_TEMPERATURE_1 Register
Value
Meaning
Default
0h – 0FFFh
Measured value for TEMPERATURE
0000h
MFR_ID (99h)
The MFR_ID command is a standard PMBus command that returns the identification of the manufacturer. To
read the MFR_ID, use the PMBus block read protocol.
Table 19. MFR_ID Register
Byte
Name
Number of bytes
MFR ID-1
Value
03h
0
1
2
3
4Eh ‘N’
53h ‘S’
43h ‘C’
MFR ID-2
MFR ID-3
MFR_MODEL (9Ah)
The MFR_MODEL command is a standard PMBus command that returns the part number of the chip. To read
the MFR_MODEL, use the PMBus block read protocol.
Table 20. MFR_MODEL Register
Byte
Name
Number of bytes
MFR ID-1
MFR ID-2
MFR ID-3
MFR ID-4
MFR ID-5
MFR ID-6
MFR ID-7
MFR ID-8
Value
08h
0
1
2
3
4
5
6
7
8
4Ch ‘L’
4Dh ‘M’
35h ‘5’
30h ‘0’
36h ‘6’
36h ‘6’
00h
00h
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MFR_REVISION (9Bh)
The MFR_REVISION command is a standard PMBus command that returns the revision level of the part. To
read the MFR_REVISION, use the PMBus block read protocol.
Table 21. MFR_REVISION Register
Byte
Name
Value
02h
0
1
2
Number of bytes
MFR ID-1
MFR ID-2
41h ‘A’
41h ‘A’
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MANUFACTURER SPECIFIC PMBUS™ COMMANDS
MFR_SPECIFIC_00: READ_VAUX (D0h)
The READ_VAUX command will report the 12-bit ADC measured auxiliary voltage. Voltages greater than or
equal to 2.97V to ground will be reported at plus full scale (0FFFh). Voltages less than or equal to 0V referenced
to ground will be reported as 0 (0000h). To read data from the READ_VAUX command, use the PMBus Read
Word protocol.
Table 22. READ_VAUX Register
Value
Meaning
Default
0h – 0FFFh
Measured value for VAUX input
0000h
MFR_SPECIFIC_01: MFR_READ_IIN (D1h)
The MFR_READ_IIN command will report the 12-bit ADC measured current sense voltage. To read data from
the MFR_READ_IIN command, use the PMBus Read Word protocol. Reading this register should use the
coefficients shown in Table 41. Please see the section on coefficient calculations to calculate the values to use.
Table 23. MFR_READ_IIN Register
Value
Meaning
Default
0h – 0FFFh
Measured value for input current sense
voltage
0000h
MFR_SPECIFIC_02: MFR_READ_PIN (D2h)
The MFR_READ_PIN command will report the upper 12 bits of the VIN x IIN product as measured by the 12-bit
ADC. To read data from the MFR_READ_PIN command, use the PMBus Read Word protocol. Reading this
register should use the coefficients shown in Table 41. Please see the section on coefficient calculations to
calculate the values to use.
Table 24. MFR_READ_PIN Register
Value
Meaning
Default
0h – 0FFFh
Value for input current x input voltage
0000h
MFR_SPECIFIC_03: MFR_IN_OC_WARN_LIMIT (D3h)
The MFR_IIN_OC_WARN_LIMIT PMBus command sets the input over-current warning threshold. In the event
that the input current rises above the value set in this register, the IIN Over-current flags are set in the respective
registers and the SMBA is asserted. To access the MFR_IIN_OC_WARN_LIMIT register, use the PMBus
Read/Write Word protocol. Reading/writing to this register should use the coefficients shown in Table 41.
Table 25. MFR_IIN_OC_WARN_LIMIT Register
Value
Meaning
Default
0FFFh
n/a
0h – 0FFEh
0FFFh
Value for input over-current warn limit
Input over-current warning disabled
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MFR_SPECIFIC_04: MFR_PIN_OP_WARN_LIMIT (D4h)
The MFR_PIN_OP_WARN_LIMIT PMBus command sets the input over-power warning threshold. In the event
that the input power rises above the value set in this register, the PIN Over-power flags are set in the respective
registers and the SMBA is asserted. To access the MFR_PIN_OP_WARN_LIMIT register, use the PMBus
Read/Write Word protocol. Reading/writing to this register should use the coefficients shown in Table 41.
Table 26. MFR_PIN_OPWARN_LIMIT Register
Value
Meaning
Default
0FFFh
n/a
0h – 0FFEh
0FFFh
Value for input over power warn limit
Input over power warning disabled
MFR_SPECIFIC_05: READ_PIN_PEAK (D5h)
The READ_PIN_PEAK command will report the maximum input power measured since a Power On reset or the
last CLEAR_PIN_PEAK command. To access the READ_PIN_PEAK command, use the PMBus Read Word
protocol. Use the coefficients shown in Table 41.
Table 27. READ_PIN_PEAK Register
Value
Meaning
Default
0h – 0FFEh
Maximum Value for input current x input
voltage since reset or last clear
0h
MFR_SPECIFIC_06: CLEAR_PIN_PEAK (D6h)
The CLEAR_PIN_PEAK command will clear the PIN PEAK register. This command uses the PMBus Send Byte
protocol.
MFR_SPECIFIC_07: GATE_MASK (D7h)
The GATE_MASK register allows the hardware to prevent fault conditions from switching off the MOSFET. When
the bit is high, the corresponding FAULT has no control over the MOSFET gate. All status registers will still be
updated (STATUS, DIAGNOSTIC) and an SMBA will still be asserted. This register is accessed with the PMBus
Read / Write Byte protocol.
The IIN/PFET Fault refers to the input current fault and the MOSFET power dissipation fault. There is no input
power fault detection; only input power warning detection.
WARNING
Inhibiting the MOSFET switch off in response to over-current or circuit breaker
fault conditions will likely result in the destruction of the MOSFET! This
functionality should be used with great care and supervision!
Table 28. MFR_SPECIFIC_07 GATE MASK Definitions
Bit
7
NAME
Not used, always 0
Not used, always 0
VIN UV FAULT
Default
0
0
0
0
0
0
0
0
6
5
4
VIN OV FAULT
3
IIN/PFET FAULT
2
OVERTEMP FAULT
Not used, always 0
CIRCUIT BREAKER FAULT
1
0
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MFR_SPECIFIC_08: ALERT_MASK (D8h)
The ALERT_MASK command is used to mask the SMBA when a specific fault or warning has occurred. Each bit
corresponds to one of the 14 different analog and digital faults or warnings that would normally result in an
SMBA being asserted. When the corresponding bit is high, that condition will not cause the SMBA to be
asserted. If that condition occurs, the registers where that condition is captured will still be updated (STATUS
registers, DIAGNOSTIC_WORD) and the external MOSFET gate control will still be active (VIN_OV_FAULT,
VIN_UV_FAULT, IIN/PFET_FAULT, CB_FAULT, OT_FAULT). This register is accessed with the PMBus Read /
Write Word protocol. The VIN UNDERVOLTAGE FAULT flag will default to 1 on startup, however, it will be
cleared to 0 after the first time the input voltage increases above the resistor-programmed UVLO threshold.
Table 29. ALERT_MASK Definitions
BIT
15
14
13
12
11
10
9
NAME
DEFAULT
VOUT UNDERVOLTAGE WARN
IIN LIMIT Warn
0
0
0
0
1
0
0
0
0
0
1
0
0
0
0
0
VIN UNDERVOLTAGE WARN
VIN OVERVOLTAGE WARN
POWER GOOD
OVERTEMP WARN
Not Used
8
OVERPOWER LIMIT WARN
Not Used
7
6
EXT_MOSFET_SHORTED
VIN UNDERVOLTAGE FAULT
VIN OVERVOLTAGE FAULT
IIN/PFET FAULT
5
4
3
2
OVERTEMPERATURE FAULT
CML FAULT (Communications Fault)
CIRCUIT BREAKER FAULT
1
0
MFR_SPECIFIC_09: DEVICE_SETUP (D9h)
The DEVICE_SETUP command may be used to override pin settings to define operation of the LM5066 under
host control. This command is accessed with the PMBus read / write byte protocol.
Table 30. DEVICE_SETUP Byte Format
Bit
Name
Meaning
7:5
Retry setting
111 = Unlimited retries
110 = Retry 16 times
101 = Retry 8 times
100 = Retry 4 times
011 = Retry 2 times
010 = Retry 1 time
001 = No retries
000 = Pin configured retries
0 = High setting (50mV)
1 = Low setting (26mV)
0 = Low setting (1.9x)
1 = High setting (3.9x)
0 = Use pin settings
1 = Use SMBus settings
4
3
2
1
Current limit setting
CB/CL Ratio
Current Limit Configuration
Unused
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Table 30. DEVICE_SETUP Byte Format (continued)
Bit
Name
Meaning
0
Unused
In order to configure the Current Limit Setting via this register, it is necessary to set the Current Limit
Configuration bit (2) to 1 to enable the register to control the current limit function and the Current Limit Setting
bit (4) to select the desired setting. If the Current Limit Configuration bit is not set, the pin setting will be used.
The Circuit Breaker to Current Limit ratio value is set by the CB / CL Ratio bit (3). Note that if the Current Limit
Configuration is changed, the samples for the telemetry averaging function will not be reset. It is recommended
to allow a full averaging update period with the new Current Limit Configuration before processing the averaged
data.
Note that the Current Limit Configuration affects the coefficients used for the Current and Power measurements
and warning registers.
MFR_SPECIFIC_10: BLOCK_READ (DAh)
The BLOCK_READ command concatenates the DIAGNOSTIC_WORD with input and output telemetry
information (IIN, VOUT, VIN, PIN) as well as TEMPERATURE to capture all of the operating information of the
LM5066 in a single SMBus transaction. The block is 12 bytes long with telemetry information being sent out in
the same manner as if an individual READ_XXX command had been issued (shown below). The contents of the
block read register are updated every clock cycle (85ns) as long as the SMBus interface is idle. BLOCK_READ
also specifies that the VIN, VOUT, IIN and PIN measurements are all time-aligned. If separate commands are
used, individual samples may not be time-aligned, because of the delay necessary for the communication
protocol.
The Block Read command is read via the PMBus block read protocol.
Table 31. BLOCK_READ Register Format
Byte Count (always 12)
DIAGNOSTIC_WORD
IIN_BLOCK
(1 byte)
(1 Word)
(1 Word)
(1 Word)
(1 Word)
(1 Word)
(1 Word)
VOUT_BLOCK
VIN_BLOCK
PIN_BLOCK
TEMP_BLOCK
MFR_SPECIFIC_11: SAMPLES_FOR_AVG (DBh)
The SAMPLES_FOR_AVG command is a manufacturer specific command for setting the number of samples
used in computing the average values for IIN, VIN, VOUT, PIN. The decimal equivalent of the AVGN nibble is the
power of 2 samples, (for example, AVGN=12 equates to N=4096 samples used in computing the average). The
LM5066 supports average numbers of 1, 2, 4, 8, 16, 32, 64, 128, 256, 512, 1024, 2048, 4096. The
SAMPLES_FOR_AVG number applies to average values of IIN, VIN, VOUT, PIN simultaneously. The LM5066
uses simple averaging. This is accomplished by summing consecutive results up to the number programmed,
then dividing by the number of samples. Averaging is calculated according to the following sequence:
Y = (X(N) + X(N-1) + ... + X(0)) / N
(36)
When the averaging has reached the end of a sequence (for example, 4096 samples are averaged), then a
whole new sequence begins that will require the same number of samples (in this example, 4096) to be taken
before the new average is ready.
Table 32. SAMPLES_FOR_AVG Register
AVGN
0000
0001
0010
N = 2AVGN
Averaging/Register Update Period (ms)
1
2
4
1
2
4
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Table 32. SAMPLES_FOR_AVG Register (continued)
AVGN
0011
0100
0101
0110
0111
1000
1001
1010
1011
1100
N = 2AVGN
Averaging/Register Update Period (ms)
8
8
16
16
32
32
64
64
128
128
256
512
1024
2048
4096
256
512
1024
2048
4096
Note that a change in the SAMPLES_FOR_AVG register will not be reflected in the average telemetry
measurements until the present averaging interval has completed. The default setting for AVGN is 0000,
therefore, the average telemetry will mirror the instantaneous telemetry until a value higher than zero is
programmed.
The SAMPLES_FOR_AVG register is accessed via the PMBus read / write byte protocol.
Table 33. SAMPLES_FOR_AVG Register
Value
Meaning
Default
0h – 0Ch
Exponent (AVGN) for number of samples to
average over
00h
MFR_SPECIFIC_12: READ_AVG_VIN (DCh)
The READ_AVG_VIN command will report the 12-bit ADC measured input average voltage. If the data is not
ready, the returned value will be the previous averaged data. However, if there is no previously averaged data,
the default value (0000h) will be returned. This data is read with the PMBus Read Word protocol. This register
should use the coefficients shown in Table 41.
Table 34. READ_AVG_VIN Register
Value
Meaning
Default
0h – 0FFFh
Average of measured values for input
voltage
0000h
MFR_SPECIFIC_13: READ_AVG_VOUT (DDh)
The READ_AVG_VOUT command will report the 12-bit ADC measured current sense average voltage. The
returned value will be the default value (0000h) or previous data when the average data is not ready. This data is
read with the PMBus Read Word protocol. This register should use the coefficients shown in Table 41.
Table 35. READ_AVG_VOUT Register
Value
Meaning
Default
0h – 0FFFh
Average of measured values for output
voltage
0000h
MFR_SPECIFIC_14: READ_AVG_IIN (DEh)
The READ_AVG_IIN command will report the 12-bit ADC measured current sense average voltage. The returned
value will be the default value (0000h) or previous data when the average data is not ready. This data is read
with the PMBus Read Word protocol. This register should use the coefficients shown in Table 41.
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Table 36. READ_AVG_IIN Register
Value
Meaning
Default
0h – 0FFFh
Average of measured values for current
sense voltage
0000h
MFR_SPECIFIC_15: READ_AVG_PIN
The READ_AVG_PIN command will report the upper 12-bits of the average VIN x IIN product as measured by
the 12-bit ADC. You will read the default value (0000h) or previous data when the average data is not ready.
This data is read with the PMBus Read Word protocol. This register should use the coefficients shown in
Table 41.
Table 37. READ_AVG_PIN Register
Value
Meaning
Default
0h – 0FFFh
Average of measured value for input voltage 0000h
x input current sense voltage
MFR_SPECIFIC_16: BLACK_BOX_READ (E0h)
The BLACK BOX READ command retrieves the BLOCK READ data which was latched in at the first assertion of
SMBA by the LM5066. It is re-armed with the CLEAR_FAULTS command. It is the same format as the
BLOCK_READ registers, the only difference being that its contents are updated with the SMBA edge rather than
the internal clock edge. This command is read with the PMBus Block Read protocol.
MFR_SPECIFIC_17: READ_DIAGNOSTIC_WORD (E1h)
The READ_DIAGNOSTIC_WORD PMBus command will report all of the LM5066 faults and warnings in a single
read operation. The standard response to the assertion of the SMBA signal of issuing multiple read requests to
various status registers can be replaced by a single word read to the DIAGNOSTIC_WORD register. The
READ_DIAGNOSTIC_WORD command should be read with the PMBus Read Word protocol. The
READ_DIAGNOSTIC_WORD is also returned in the BLOCK_READ, BLACK_BOX_READ, and
AVG_BLOCK_READ operations.
Table 38. DIAGNOSTIC_WORD Format
Bit
15
14
13
12
11
10
9
Meaning
Default
VOUT_UNDERVOLTAGE_WARN
IIN_OP_WARN
0
0
0
0
1
0
0
0
1
1
1
0
0
0
0
0
VIN_UNDERVOLTAGE_WARN
VIN_OVERVOLTAGE_WARN
POWER GOOD
OVER_TEMPERATURE_WARN
TIMER_LATCHED_OFF
EXT_MOSFET_SHORTED
CONFIG_PRESET
8
7
6
DEVICE_OFF
5
VIN_UNDERVOLTAGE_FAULT
VIN_OVERVOLTAGE_FAULT
IIN_OC/PFET_OP_FAULT
OVER_TEMPERATURE_FAULT
CML_FAULT
4
3
2
1
0
CIRCUIT_BREAKER_FAULT
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MFR_SPECIFIC_18: AVG_BLOCK_READ (E2h)
The AVG_BLOCK_READ command concatenates the DIAGNOSTIC_WORD with input and output average
telemetry information (IIN, VOUT, VIN, PIN) as well as temperature to capture all of the operating information of
the part in a single PMBus transaction. The block is 12 bytes long with telemetry information being sent out in the
same manner as if an individual READ_AVG_XXX command had been issued (shown below).
AVG_BLOCK_READ also specifies that the VIN, VOUT, and IIN measurements are all time-aligned whereas
there is a chance they may not be if read with individual PMBus commands. To read data from the
AVG_BLOCK_READ command, use the SMBus Block Read protocol.
Table 39. AVG_BLOCK_READ Register Format
Byte Count (always 12)
DIAGNOSTIC_WORD
AVG_IIN
(1 byte)
(1 word)
(1 word)
(1 word)
(1 word)
(1 word)
(1 word)
AVG_VOUT
AVG_VIN
AVG_PIN
TEMPERATURE
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-
+
Figure 18. Command/Register and Alert Flow Diagram
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READING AND WRITING TELEMETRY DATA AND WARNING THRESHOLDS
All measured telemetry data and user programmed warning thresholds are communicated in 12-bit two’s
compliment binary numbers read/written in 2 byte increments conforming to the Direct format as described in
section 8.3.3 of the PMBus Power System Management Protocol Specification 1.1 (Part II). The organization of
the bits in the telemetry or warning word is shown in Table 40, where Bit_11 is the most significant bit (MSB) and
Bit_0 is the least significant bit (LSB). The decimal equivalent of all warning and telemetry words are constrained
to be within the range of 0 to 4095, with the exception of temperature. The decimal equivalent value of the
temperature word ranges from 0 to 65535.
Table 40. Telemetry and Warning Word Format
Byte
B7
Bit_7
0
B6
Bit_6
0
B5
Bit_5
0
B4
Bit_4
0
B3
B2
B1
B0
1
2
Bit_3
Bit_11
Bit_2
Bit_10
Bit_1
Bit_9
Bit_0
Bit_8
Conversion from direct format to real-world dimensions of current, voltage, power, and temperature is
accomplished by determining appropriate coefficients as described in section 7.2.1 of the PMBus Power System
Management Protocol Specification 1.1 (Part II). According to this specification, the host system converts the
values received into a reading of volts, amperes, watts, or other units using the following relationship:
1
(Y x 10-R - b)
X =
m
(37)
Where:
X: the calculated "real-world" value (volts, amps, watt, etc.)
m: the slope coefficient
Y: a two byte two's complement integer received from device
b: the offset, a two byte, two's complement integer
R: the exponent, a one byte two's complement integer
R is only necessary in systems where m is required to be an integer (for example, where m may be stored in a
register in an integrated circuit). In those cases, R only needs to be large enough to yield the desired accuracy.
Table 41. Telemetry and Warning Conversion Coefficients
Commands
Condition
Format
Number of
Data Bytes
m
b
R
Units
READ_VIN, READ_AVG_VIN
VIN_OV_WARN_LIMIT
VIN_UV_WARN_LIMIT
DIRECT
2
4587
-1200
-2
V
READ_VOUT, READ_AVG_VOUT
VOUT_UV_WARN_LIMIT
DIRECT
2
4587
-2400
-2
V
READ_VAUX
(1)READ_IIN, READ_AVG_IIN
MFR_IIN_OC_WARN_LIMIT
(1)READ_IN, READ_AVG_IN
MFR_IIN_OC_WARN_LIMIT
(1)READ_PIN, READ_AVG_PIN,
READ_PIN_PEAK
DIRECT
DIRECT
2
2
13793
10753
0
-1
-2
V
A
CL = VDD
CL = GND
CL = VDD
-1200
DIRECT
DIRECT
2
2
5405
1204
-600
-2
-3
A
-6000
W
MFR_PIN_OP_WARN_LIMIT
(1)READ_PIN, READ_AVG_PIN,
READ_PIN_PEAK
MFR_PIN_OP_WARN_LIMIT
CL = GND
DIRECT
DIRECT
2
2
605
-8000
0
-3
-3
W
READ_TEMPERATURE_1
OT_WARN_LIMIT
16000
°C
OT_FAULT_LIMIT
(1) The coefficients relating to current/power measurements and warning thresholds shown are normalized to a sense resistor (RS) value of
1mΩ. In general, the current/power coefficients can be calculated using the relationships shown in Table 42.
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Table 42. Current and Power Telemetry and Warning Conversion Coefficients (RS in mΩ)
Commands
Condition
CL = VDD
CL = GND
CL = VDD
Format
DIRECT
DIRECT
DIRECT
Number of
Data Bytes
m
b
R
-2
-2
-3
Units
A
(1)READ_IIN, READ_AVG_IIN
MFR_IIN_OC_WARN_LIMIT
(1)READ_IIN, READ_AVG_IIN
MFR_IIN_OC_WARN_LIMIT
(1)READ_PIN, READ_AVG_PIN,
READ_PIN_PEAK
2
2
2
10753 x RS
5405 x RS
1204 x RS
-1200
-600
-6000
A
W
MFR_PIN_OP_WARN_LIMIT
(1)READ_PIN, READ_AVG_PIN,
READ_PIN_PEAK
CL = GND
DIRECT
2
605 x RS
-8000
-3
W
MFR_PIN_OP_WARN_LIMIT
(1) The coefficients relating to current/power measurements and warning thresholds shown in Table 41 are normalized to a sense resistor
(RS) value of 1mΩ. In general, the current/power coefficients can be calculated using the relationships shown.
Care must be taken to adjust the exponent coefficient, R, such that the value of m remains within the range of -
32768 to +32767. For example, if a 5 mΩ sense resistor is used, the correct coefficients for the READ_IIN
command with CL = VDD would be m = 5359, b = -120, R = -1.
A Note on the "b" Coefficient
Since b coefficients represent offset, for simplification b is set to zero in the following discussions.
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READING CURRENT
The current register actually displays a value equivalent to a voltage across the user specified sense resistor, RS.
The coefficients enable the data output to be converted to amps. The values shown in the example are based on
having the device programmed for a 26 mV current limit threshold (CL = VDD). In the 26mV range, the LSB
value is 9.3 µV and the full scale range is 38.0 mV. In the 50mV range (CL = GND), the LSB value is 18.5 µV
and the full scale range in 76.0 mV.
Step
Example
1. Determine full scale current and shunt value based on 38.0 mV
across shunt at full scale:
Example: 8.6A application with 3 mΩ shunt.
38.0 mV
RS
IIN_MAX
=
(39)
(38)
or:
2. Determine m':
4095
m‘ =
(41)
(43)
IIN_MAX
(40)
(42)
3. Determine exponent R necessary to set m' to integer value m:
Select R to provide 16 bit accuracy for the integer value of m:
10R
m‘
=
m
R = -1
m = 3233
R = -1
b = 0
4. Final values
READING INPUT AND OUTPUT VOLTAGE
Coefficients for VIN and VOUT are fixed and are consistent between read telemetry measurements (for example,
READ_VIN, READ_AVG_VIN) and warning thresholds (for example, VIN_UV_WARN_LIMIT). Input and output
voltage values are read/written in Direct format with 12-bit resolution and a 21.8 mV LSB. An example of
calculating the PMBus coefficients for input voltage is shown below.
Step
Example
1. Determine m' based on full scale analog input and full scale digital
range:
(45)
(44)
2. Determine exponent R necessary to set m' to integer value m with Select R to provide 16 bit accuracy for the integer value of m: (4585
desired accuracy:
in this example):
(47)
(46)
R = -2
m = 4586
R = -2
b =0
3. Final values
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READING POWER
The power calculation of the LM5066 is a relative power calculation meaning that full scale of the power register
corresponds to simultaneous full scale values in the current register and voltage register such that the power
register has the following relationship based on decimal equivalents of the register contents:
(48)
For this reason power coefficients will also vary depending on the shunt value and must be calculated for each
application. The power LSB will vary depending on shunt value according to 828 µW/Rsense for the 26mV range
or 1.65 mW/Rsense for the 50mV range.
Step
Example
1. Determine full scale power from known full scale of input current
and input voltage:
Example: 8.6A application with 3 mΩ shunt.
PIN_MAX = (89.3V) x (76 mV / 3 mΩ) = 2262W
PIN_MAX = VIN_MAX x IIN_MAX
2. Determine m':
(50)
(52)
(49)
3. Optional: Determine exponent R necessary to set m' to integer
value m with desired accuracy:
Select R to provide 16 bit accuracy for the integer value of m :
(51)
R = -4
4. Final values
m = 18103
R = -4
b = 0
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DETERMINING TELEMETRY COEFFICIENTS EMPIRICALLY WITH LINEAR FIT
The coefficients for telemetry measurements and warning thresholds presented in Table 41 are adequate for the
majority of applications. Current and power coefficients must be calculated per application as they are dependent
on the value of the sense resistor, RS, used. Table 42 provides the equations necessary for calculating the
current and power coefficients for the general case. The small signal nature of the current measurement make it
and the power measurement more susceptible to PCB parasitics than other telemetry channels. This may cause
slight variations in the optimum coefficients (m, b, R) for converting from Direct format digital values to real-world
values (for example, Amps and Watts). The optimum coefficients can be determined empirically for a specific
application and PCB layout using two or more measurements of the telemetry channel of interest. The current
coefficients can be determined using the following method:
1. While the LM5066 is in normal operation measure the voltage across the sense resistor using kelvin test
points and a high accuracy DVM while controlling the load current. Record the integer value returned by the
READ_AVG_IIN command (with the SAMPLES_FOR_AVG set to a value greater than 0) for two or more
voltages across the sense resistor. For best results, the individual READ_AVG_IIN measurements should
span nearly the full scale range of the current (For example, voltage across RS of 5mV and 20mV).
2. Convert the measured voltages to currents by dividing them by the value of RS. For best accuracy the value
of RS should be measured. Table 43 assumes a sense resistor value of 5mΩ.
Table 43. Measurements for linear fit determination of current coefficients:
Measured voltage across
RS (V)
Measured Current (A)
READ_AVG_IIN
(integer value)
0.005
0.01
0.02
1
2
4
568
1108
2185
1. Using the spreadsheet or math program of your choice determine the slope and the y-intercept of the data
returned by the READ_AVG_IIN command versus the measured current. For the data shown in Table 42:
–
–
–
READ_AVG_IN value = slope x (Measured Current) + (y-intercept)
slope = 538.9
y-intercept = 29.5
2. To determine the ‘m’ coefficient, simply shift the decimal point of the calculated slope to arrive at at integer
with a suitable number of significant digits for accuracy (typically 4) while staying with the range of -32768 to
+32767. This shift in the decimal point equates to the ‘R’ coefficient. For the slope value shown above, the
decimal point would be shifted to the right once hence R = -1.
3. Once the ‘R’ coefficient has been determined, the ‘b’ coefficient is found by multiplying the y-intercept by
10-R. In this case the value of b = 295.
–
–
–
–
Calculated Current Coefficients:
m = 5389
b = 295
R = -1
1
(Y x 10-R - b)
X =
m
(53)
Where:
X: the calculated "real-world" value (volts, amps, watts, temperature)
m: the slope coefficient, is the two byte, two's complement integer
Y: a two byte two's complement integer received from device
b: the offset, a two byte, two's complement integer
R: the exponent, a one byte two's complement integer
The above procedure can be repeated to determine the coefficients of any telemetry channel simply by
substituting measured current for some other parameter (for example, power, voltage, etc.).
52
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SNVS655G –JUNE 2011–REVISED FEBRUARY 2013
WRITING TELEMETRY DATA
There are several locations that will require writing data if their optional usage is desired. Use the same
coefficients previously calculated for your application, and apply them using this method as prescribed by the
PMBus revision section 7.2.2 "Sending a Value"
Y = (mX + b) x 10R
(54)
Where:
X: the calculated "real-world" value (volts, amps, watts, temperature)
m: the slope coefficient, is the two byte, two's complement integer
Y: a two byte two's complement integer received from device
b: the offset, a two byte, two's complement integer
R: the exponent, a one byte two's complement integer
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PMBUS™ ADDRESS LINES (ADR0, ADR1, ADR2)
The three address lines are to be set high (connect to VDD), low (connect to GND), or open to select one of 27
addresses for communicating with the LM5066. Table 44 depicts 7-bit addresses (eighth bit is read/write bit):
Table 44. Device Addressing
ADR2
Z
Z
Z
Z
Z
Z
Z
Z
Z
0
ADR1
Z
Z
Z
0
ADR0
Z
0
Decoded Address
40h
41h
42h
43h
44h
45h
46h
47h
10h
11h
12h
13h
14h
15h
16h
17h
50h
51h
52h
53h
54h
55h
56h
57h
58h
59h
5Ah
1
Z
0
0
0
1
1
Z
0
1
1
1
Z
Z
Z
0
Z
0
0
0
1
0
Z
0
0
0
0
0
1
0
1
Z
0
0
1
0
1
1
1
Z
Z
Z
0
Z
0
1
1
1
1
Z
0
1
0
1
0
1
1
1
Z
0
1
1
1
1
1
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SNVS655G –JUNE 2011–REVISED FEBRUARY 2013
SMBUS COMMUNICATIONS TIMING REQUIREMENTS
t
R
t
F
SCL
t
LOW
V
IH
V
IL
t
t
t
SU;STA
HIGH
SU;STO
t
t
t
SU;DAT
HD;DAT
HD;STA
SDA
V
IH
V
IL
t
BUF
P
S
S
P
Figure 19. SMBus Timing Diagram
Table 45. SMBus Timing Definition
Limits
Symbol
Parameter
Units
Comments
Min
10
Max
FSMB
TBUF
SMBus Operating Frequency
Bus free time between Stop and Start Condition
400
kHz
µs
1.3
0.6
THD:STA
Hold time after (Repeated) Start Condition. After this
period, the first clock is generated.
µs
TSU:STA
TSU:STO
THD:DAT
TSU:DAT
TTIMEOUT
TLOW
Repeated Start Condition setup time
Stop Condition setup time
Data hold time
0.6
0.6
85
µs
µs
ns
ns
ms
µs
µs
ms
ms
ns
ns
Data setup time
100
25
(1)
Clock low time-out
35
Clock low period
1.5
0.6
(2)
(3)
(4)
(5)
(5)
THIGH
Clock high period
TLOW:SEXT
TLOW:MEXT
TF
Cumulative clock low extend time (slave device)
Cumulative low extend time (master device)
Clock or Data Fall Time
25
10
20
20
300
300
TR
Clock or Data Rise Time
(1) Devices participating in a transfer will timeout when any clock low exceeds the value of TTIMEOUT,MIN of 25 ms. Devices that have
detected a timeout condition must reset the communication no later than TTIMEOUT,MAX of 35 ms. The maximum value must be adhered
to by both a master and a slave as it incorporates the cumulative stretch limit for both a master (10ms) and a slave (25ms).
(2) THIGH MAX provides a simple method for devices to detect bus idle conditions.
(3) TLOW:SEXT is the cumulative time a slave device is allowed to extend the clock cycles in one message from the initial start to the stop. If
a slave exceeds this time, it is expected to release both its clock and data lines and reset itself.
(4) TLOW:MEXT is the cumulative time a master device is allowed to extend its clock cycles within each byte of a message as defined from
start-to-ack, ack-to-ack, or ack-to-stop.
(5) Rise and fall time is defined as follows:• TR = ( VILMAX – 0.15) to (VIHMIN + 0.15)• TF = 0.9 VDD to (VILMAX – 0.15)
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SMBA RESPONSE
The SMBA effectively has two masks:
1. The Alert Mask Register at D8h, and
2. The ARA Automatic Mask.
The ARA Automatic Mask is a mask that is set in response to a successful ARA read. An ARA read operation
returns the PMBus address of the lowest addressed part on the bus that has its SMBA asserted. A successful
ARA read means that THIS part was the one that returned its address. When a part responds to the ARA read, it
releases the SMBA signal. When the last part on the bus that has an SMBA set has successfully reported its
address, the SMBA signal will de-assert.
The way that the LM5066 releases the SMBA signal is by setting the ARA Automatic mask bit for all fault
conditions present at the time of the ARA read. All status registers will still show the fault condition, but it will not
generate and SMBA on that fault again until the ARA Automatic mask is cleared by the host issuing a
CLEAR_FAULTS command to this part. This should be done as a routine part of servicing an SMBA condition on
a part, even if the ARA read is not done. Figure 20 depicts a schematic version of this flow.
From other
fault inputs
SMBA
Fault Condition
Alert Mask D8h
From PMBus
Set
ARA Auto Mask
Clear
ARA Operation Flag Succeeded
Clear_Fault Command Received
Figure 20. Typical Flow Schematic for SMBA Fault
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SNVS655G –JUNE 2011–REVISED FEBRUARY 2013
REVISION HISTORY
Changes from Revision F (February 2013) to Revision G
Page
•
Changed layout of National Data Sheet to TI format .......................................................................................................... 56
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PACKAGE OPTION ADDENDUM
www.ti.com
15-Sep-2013
PACKAGING INFORMATION
Orderable Device
LM5066PMH/NOPB
LM5066PMHE/NOPB
LM5066PMHX/NOPB
Status Package Type Package Pins Package
Eco Plan Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
-40 to 125
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
ACTIVE
HTSSOP
HTSSOP
HTSSOP
PWP
28
28
28
480
Green (RoHS
& no Sb/Br)
CU SN
CU SN
CU SN
Level-3-260C-168 HR
Level-3-260C-168 HR
Level-3-260C-168 HR
LM5066PMH
ACTIVE
ACTIVE
PWP
PWP
250
Green (RoHS
& no Sb/Br)
-40 to 125
LM5066PMH
LM5066PMH
2500
Green (RoHS
& no Sb/Br)
-40 to 125
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
15-Sep-2013
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
30-Jul-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM5066PMHE/NOPB HTSSOP PWP
LM5066PMHX/NOPB HTSSOP PWP
28
28
250
178.0
330.0
16.4
16.4
6.8
6.8
10.2
10.2
1.6
1.6
8.0
8.0
16.0
16.0
Q1
Q1
2500
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
30-Jul-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LM5066PMHE/NOPB
LM5066PMHX/NOPB
HTSSOP
HTSSOP
PWP
PWP
28
28
250
213.0
367.0
191.0
367.0
55.0
38.0
2500
Pack Materials-Page 2
MECHANICAL DATA
PWP0028A
MXA28A (Rev D)
www.ti.com
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