LM5575QMHX/NOPB [TI]

75V、1.5A 降压开关稳压器 | PWP | 16 | -40 to 125;
LM5575QMHX/NOPB
型号: LM5575QMHX/NOPB
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

75V、1.5A 降压开关稳压器 | PWP | 16 | -40 to 125

开关 稳压器
文件: 总35页 (文件大小:951K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
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LM5575-Q1  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
LM5575-Q1 75V1.5A 降压开关稳压器  
1 特性  
3 说明  
1
符合面向汽车 应用的的 AEC-Q100 标准:  
LM5575-Q1 降压开关稳压器简单易用,可支持设计工  
程师使用最少数量的组件来设计和优化强大的电源。  
LM5575-Q1 具有 6V 75V 的工作输入电压范围,并  
通过一个集成式 330mN 沟道 MOSFET 提供 1.5A  
的连续输出电流。该稳压器采用仿真电流模式架构,可  
提供固有的线路稳定度、出色的负载瞬态响应以及简化  
的环路补偿特性,且无电流模式稳压器中常见的低占空  
比限制。该器件的工作频率可在 50kHz 500kHz 范  
围内进行调节,从而实现解决方案尺寸和效率的最优  
化。LM5575-Q1 的逐周期电流限制、短路保护、热关  
断及远程关断等特性可确保其运行稳健可靠。该器件采  
用功耗增强型 16 引脚 HTSSOP 封装,并且配有用于  
散热的裸露芯片连接焊盘。LM5575-Q1 由一整套的  
WEBENCH®在线设计工具提供支持。如需了解符合  
AEC-Q100 的等级 1 和等级 0 的可订购部件号,请参  
阅本数据表末尾的可订购产品附录。  
器件温度等级 1-40°C +125°C 的工作温度  
范围  
器件温度等级 0–40°C +150°C 的工作温度  
范围  
器件 HBM ESD 分类等级 2  
集成 75V330mN 沟道 MOSFET  
6V 75V 超宽输入电压范围  
低至 1.225V 的可调节输出电压  
1.65% 反馈基准电压精度  
可使用单个电阻器在 50kHz 500kHz 之间调节工  
作频率  
/从频率同步  
可调节软启动  
仿真电流模式控制架构  
宽带宽误差放大器  
内置保护  
使用 LM5575-Q1 并借助 WEBENCH® 电源设计器  
创建定制设计  
器件信息(1)  
器件型号  
LM5575-Q1  
封装  
封装尺寸(标称值)  
HTSSOP (16)  
5.00mm x 4.40mm  
2 应用  
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附  
录。  
汽车  
工业  
简化原理图  
VIN  
BST  
SW  
VIN  
VOUT  
SYNC  
LM5575  
SD  
IS  
OUT  
FB  
RT  
VCC  
SS  
COMP  
GND  
RAMP  
1
本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。 有关适用的官方英文版本的最新信息,请访问 www.ti.com,其内容始终优先。 TI 不保证翻译的准确  
性和有效性。 在实际设计之前,请务必参考最新版本的英文版本。  
English Data Sheet: SNOSB23  
 
 
 
 
 
LM5575-Q1  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
www.ti.com.cn  
目录  
1
2
3
4
5
6
特性.......................................................................... 1  
应用.......................................................................... 1  
说明.......................................................................... 1  
修订历史记录 ........................................................... 2  
Pin Configuration and Functions......................... 3  
Specifications......................................................... 4  
6.1 Absolute Maximum Ratings ...................................... 4  
6.2 ESD Ratings ............................................................ 4  
6.3 Recommended Operating Conditions....................... 4  
6.4 Thermal Information.................................................. 5  
6.5 Electrical Characteristics........................................... 5  
6.6 Typical Characteristics.............................................. 7  
Detailed Description .............................................. 9  
7.1 Overview ................................................................... 9  
7.2 Functional Block Diagram ......................................... 9  
7.3 Feature Description................................................... 9  
7.4 Device Functional Modes........................................ 10  
8
9
Application and Implementation ........................ 16  
8.1 Application Information............................................ 16  
8.2 Typical Application ................................................. 17  
Power Supply Recommendations...................... 23  
10 Layout................................................................... 23  
10.1 Layout Guidelines ................................................. 23  
10.2 Layout Examples................................................... 24  
10.3 Thermal Considerations........................................ 25  
11 器件和文档支持 ..................................................... 25  
11.1 器件支持 ............................................................... 25  
11.2 接收文档更新通知 ................................................. 25  
11.3 社区资源................................................................ 25  
11.4 ....................................................................... 25  
11.5 静电放电警告......................................................... 26  
11.6 Glossary................................................................ 26  
12 机械、封装和可订购信息....................................... 26  
7
4 修订历史记录  
注:之前版本的页码可能与当前版本有所不同。  
Changes from Revision E (February 2019) to Revision F  
Page  
特性中添加了等级 0” 信息 .............................................................................................................................................. 1  
说明末尾添加了等级 1 和等级 0 的 句子 ......................................................................................................................... 1  
Changes from Revision D (March 2018) to Revision E  
Page  
从数据表中删除了 LM2xxx 器件引用 ...................................................................................................................................... 1  
Changed "760" mΩ to "800 mΩ" in buck switch Rds(on) over full operating junction temperature row ................................ 6  
Changed forced off-time maximum value from: 590 ns to: 626 ns in full operating junction temperature range................... 6  
Changes from Revision C (December 2014) to Revision D  
Page  
已添加 添加了 WEBENCH 链接;对 SEO 改进进行了细微的编辑性更新.............................................................................. 1  
Changed RθJA from "50°C/W" to "38.4°C/W" ......................................................................................................................... 5  
Changed RθJC(top) from "14°C/W" to "21.8°C/W"; add additional thermal values ................................................................... 5  
Corrected unit for RL to "kΩ".................................................................................................................................................. 8  
Changes from Revision B (April 2013) to Revision C  
Page  
已添加 添加了引脚配置和功能 部分、处理额定值 表、特性 说明 部分、器件功能模式应用和实施 部分、电源推荐  
部分、布局 部分、器件和文档支持 部分以及机械、封装和可订购信息 部分 ......................................................................... 1  
Changes from Revision A (April 2013) to Revision B  
Page  
Changed layout of National Semiconductor data sheet to TI format.................................................................................... 25  
2
Copyright © 2008–2019, Texas Instruments Incorporated  
 
LM5575-Q1  
www.ti.com.cn  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
5 Pin Configuration and Functions  
PWP Package  
16-Pin HTSSOP With Exposed Thermal Pad  
Top View  
16  
15  
14  
13  
12  
11  
10  
9
1
2
3
4
5
6
7
8
VCC  
BST  
PRE  
SW  
SD  
VIN  
IS  
SYNC  
COMP  
FB  
PGND  
OUT  
SS  
RT  
RAMP  
AGND  
Pin Functions  
PIN  
NAME  
I/O  
DESCRIPTION  
APPLICATION INFORMATION  
NO.  
VCC tracks VIN up to 9 V. Beyond 9 V, VCC is regulated to 7 V. A 0.1-µF to  
1-µF ceramic decoupling capacitor is required. An external voltage (7.5 V –  
14 V) can be applied to this pin to reduce internal power dissipation.  
1
VCC  
O
Output of the bias regulator  
If the SD pin voltage is lower than 0.7 V, the regulator is in a low power  
state. If the SD pin voltage is between 0.7 V and 1.225 V the regulator is in  
standby mode. If the SD pin voltage is higher than 1.225 V, the regulator is  
operational. An external voltage divider can be used to set a line  
undervoltage shutdown threshold. If the SD pin is left open circuit, a 5-µA  
pullup current source configures the regulator fully operational.  
2
SD  
I
Shutdown or UVLO input  
Input supply voltage  
3
4
VIN  
I
I
Nominal operating range: 6 V to 75 V.  
The internal oscillator can be synchronized to an external clock with an  
external pulldown device. Multiple LM5575-Q1 devices can be synchronized  
together by connection of their SYNC pins.  
Oscillator synchronization input  
or output  
SYNC  
Output of the internal error  
amplifier  
The loop compensation network must be connected between this pin and  
the FB pin.  
5
6
7
COMP  
FB  
O
I
Feedback signal from the  
regulated output  
This pin is connected to the inverting input of the internal error amplifier. The  
regulation threshold is 1.225 V.  
Internal oscillator frequency set The internal oscillator is set with a single resistor connected between this pin  
input  
RT  
I
and the AGND pin.  
An external capacitor connected between this pin and the AGND pin sets the  
ramp slope used for current mode control. Recommended capacitor range  
50 pF to 2000 pF.  
8
RAMP  
AGND  
SS  
O
Ramp control signal  
9
GND Analog ground  
Internal reference for the regulator control functions  
An external capacitor and an internal 10-µA current source set the time  
constant for the rise of the error amp reference. The SS pin is held low  
during standby, VCC UVLO, and thermal shutdown.  
10  
O
O
Soft start  
11  
12  
OUT  
Output voltage connection  
Connect directly to the regulated output voltage.  
PGND  
GND Power ground  
Low-side reference for the PRE switch and the IS sense resistor.  
Current measurement connection for the re-circulating diode. An internal  
sense resistor and a sample and hold circuit sense the diode current near  
the conclusion of the off-time. This current measurement provides the DC  
level of the emulated current ramp.  
13  
14  
IS  
I
Current sense  
Switching node  
The source terminal of the internal buck switch. Connect the SW pin to the  
external Schottky diode and to the buck inductor.  
SW  
O
Copyright © 2008–2019, Texas Instruments Incorporated  
3
LM5575-Q1  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
www.ti.com.cn  
Pin Functions (continued)  
PIN  
I/O  
DESCRIPTION  
APPLICATION INFORMATION  
NO.  
NAME  
This open-drain output can be connected to SW pin to help charging the  
bootstrap capacitor during very light load conditions or in applications where  
the output may be pre-charged before the LM5575-Q1 is enabled. An  
internal pre-charge MOSFET is turned on for 250 ns each cycle just prior to  
the on-time interval of the buck switch.  
Pre-charge assist for the  
bootstrap capacitor  
15  
PRE  
O
An external capacitor is required between the BST and the SW pins. TI  
recommends a 0.022-µF ceramic capacitor. The capacitor is charged from  
VCC through an internal diode during the off-time of the buck switch.  
Boost input for bootstrap  
capacitor  
16  
BST  
EP  
I
Exposed metal pad on the underside of the device. TI recommends to  
connect this pad to the PWB ground plane to help with heat dissipation.  
NA  
--  
Exposed Pad  
6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)(2)  
.
MIN  
MAX  
UNIT  
V
VIN to GND  
76  
BST to GND  
90  
V
PRE to GND  
76  
V
SW to GND (steady-state)  
BST to VCC  
1.5  
V
76  
V
SD, VCC to GND  
BST to SW  
14  
V
14  
V
OUT to GND  
Limited to VIN  
SYNC, SS, FB, RAMP to GND  
Storage temperature, Tstg  
7
V
–65  
150  
°C  
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Recommended Operating Conditions are  
conditions under which operation of the device is intended to be functional. For ensured specifications and test conditions, see the  
Electrical Characteristics.  
(2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and  
specifications.  
6.2 ESD Ratings  
VALUE  
UNIT  
V(ESD)  
Electrostatic discharge  
Human-body model (HBM), per AEC Q100-002(1)  
±2000  
V
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.  
6.3 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)(1)  
MIN  
6
MAX  
UNIT  
V
VIN  
75  
Operation junction temperature  
40  
150  
°C  
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Recommended Operating Conditions are  
conditions under which operation of the device is intended to be functional. For ensured specifications and test conditions, see the  
Electrical Characteristics.  
4
Copyright © 2008–2019, Texas Instruments Incorporated  
 
 
LM5575-Q1  
www.ti.com.cn  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
6.4 Thermal Information  
LM5575-Q1  
THERMAL METRIC(1)  
PWP (HTSSOP)  
UNIT  
16 PINS  
38.4  
21.8  
15.6  
0.5  
RθJA  
Junction-to-ambient thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
ψJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
ψJB  
16.4  
1.5  
RθJC(bot)  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
6.5 Electrical Characteristics  
Specifications are for TJ = 25°C. VIN = 48 V, RT = 32.4 kunless otherwise stated.  
(1)  
PARAMETER  
START-UP REGULATOR  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
7.15  
V
VccReg  
VCC regulator output  
Over full operating junction  
temperature range  
6.85  
7.5  
VCC LDO mode turnoff  
VCC current limit  
VCC SUPPLY  
9
V
VCC = 0 V  
25  
mA  
(VCC increasing)  
5.35  
V
VCC UVLO threshold  
Over full operating junction  
temperature range  
5.01  
5.69  
VCC undervoltage hysteresis  
Bias current (Iin)  
0.35  
3.7  
V
FB = 1.3 V  
mA  
Over full operating junction  
temperature range  
4.5  
85  
SD = 0 V  
57  
µA  
V
Shutdown current (Iin)  
Over full operating junction  
temperature range  
SHUTDOWN THRESHOLDS  
(SD Increasing)  
0.7  
Shutdown threshold  
Shutdown hysteresis  
Standby threshold  
Over full operating junction  
temperature range  
0.43  
1.15  
0.9  
0.1  
V
V
(Standby Increasing)  
1.225  
Over full operating junction  
temperature range  
1.30  
Standby hysteresis  
0.1  
5
V
SD pullup current source  
µA  
(1) Minimum and maximum limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through  
correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).  
Copyright © 2008–2019, Texas Instruments Incorporated  
5
LM5575-Q1  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
www.ti.com.cn  
Electrical Characteristics (continued)  
Specifications are for TJ = 25°C. VIN = 48 V, RT = 32.4 kunless otherwise stated. (1)  
PARAMETER  
SWITCH CHARACTERISTICS  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
330  
mΩ  
Buck switch Rds(on)  
Over full operating junction  
temperature range  
800  
BOOST UVLO  
4
0.56  
70  
V
V
BOOST UVLO hysteresis  
Pre-charge switch Rds(on)  
Pre-charge switch on-time  
ns  
250  
CURRENT LIMIT  
RAMP = 0 V  
2.1  
A
Cycle by cycle current limit  
Over full operating junction  
temperature range  
1.8  
2.7  
14  
Cycle by cycle current limit delay  
RAMP = 2.5 V  
85  
10  
ns  
SOFT START  
SS current source  
OSCILLATOR  
µA  
Over full operating junction  
temperature range  
7
200  
485  
kHz  
kHz  
Frequency1  
Frequency2  
Over full operating junction  
temperature range  
180  
425  
220  
545  
RT = 11 kΩ  
Over full operating junction  
temperature range  
SYNC source impedance  
SYNC sink impedance  
SYNC threshold (falling)  
11  
110  
1.3  
kΩ  
V
RT = 11 kΩ  
kHz  
SYNC frequency  
Over full operating junction  
temperature range  
550  
15  
Over full operating junction  
temperature range  
ns  
µA  
µA  
SYNC pulse width minimum  
RAMP GENERATOR  
VIN = 60 V, VOUT=10 V  
550  
50  
Ramp current 1  
Ramp current 2  
Over full operating junction  
temperature range  
467  
36  
633  
64  
VIN = 10 V, VOUT= 10 V  
Over full operating junction  
temperature range  
PWM COMPARATOR  
500  
ns  
Forced off-time  
Over full operating junction  
temperature range  
390  
626  
Minimum on-time  
80  
ns  
V
COMP to PWM comparator offset  
0.7  
6
Copyright © 2008–2019, Texas Instruments Incorporated  
LM5575-Q1  
www.ti.com.cn  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
Electrical Characteristics (continued)  
Specifications are for TJ = 25°C. VIN = 48 V, RT = 32.4 kunless otherwise stated. (1)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
ERROR AMPLIFIER  
VFB = COMP  
1.225  
V
Feedback voltage  
Over full operating junction  
temperature range  
1.205  
1.245  
FB bias current  
DC gain  
17  
70  
nA  
dB  
Over full operating junction  
temperature range  
2.5  
mA  
COMP sink / source current  
Unity gain bandwidth  
3
MHz  
DIODE SENSE RESISTANCE  
DSENSE  
83  
mΩ  
THERMAL SHUTDOWN  
TSD  
Thermal shutdown threshold  
Thermal shutdown hysteresis  
180  
25  
°C  
°C  
6.6 Typical Characteristics  
1000  
100  
10  
1
10  
100  
1000  
R
T
(kW)  
Figure 2. Oscillator Frequency vs Temperature  
FOSC = 200 kHz  
Figure 1. Oscillator Frequency vs RT  
Copyright © 2008–2019, Texas Instruments Incorporated  
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LM5575-Q1  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
www.ti.com.cn  
Typical Characteristics (continued)  
8
6
4
2
0
12  
(mA)  
0
4
8
16  
20  
24  
I
CC  
Figure 4. VCC vs ICC VIN = 12 V  
Figure 3. Soft-Start Current vs Temperature  
10  
50  
40  
30  
20  
10  
0
225  
180  
135  
90  
8
6
PHASE  
45  
4
0
Ramp Down  
GAIN  
-10  
-20  
-30  
-45  
-90  
-135  
2
Ramp Up  
0
10k  
100k  
1M  
10M  
100M  
0
2
4
6
8
10  
V
(V)  
IN  
FREQUENCY (Hz)  
Figure 5. VCC vs VIN RL = 7 kΩ  
Figure 6. Error Amplifier Gain / Phase AVCL = 101  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 24V  
IN  
V
= 7V  
IN  
V
= 48V  
IN  
V
= 75V  
IN  
0.25  
0.5  
0.75  
1
1.25  
1.5  
I
(A)  
OUT  
Figure 7. Demoboard Efficiency vs IOUT and VIN  
8
Copyright © 2008–2019, Texas Instruments Incorporated  
LM5575-Q1  
www.ti.com.cn  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
7 Detailed Description  
7.1 Overview  
The LM5575-Q1 switching regulator features the functions necessary to implement an efficient high-voltage buck  
regulator using a minimum of external components. This easy-to-use regulator integrates a 75-V N-Channel buck  
switch with an output current capability of 1.5 amps. The regulator control method is based on current mode  
control using an emulated current ramp. Peak current mode control provides inherent line voltage feed-forward,  
cycle-by-cycle current limiting, and ease-of-loop compensation. The use of an emulated control ramp reduces  
noise sensitivity of the pulse-width modulation circuit, which allows reliable processing of very small duty cycles  
necessary in high-input voltage applications. The operating frequency is user programmable from 50 kHz to 500  
kHz. An oscillator synchronization pin allows multiple LM5575-Q1 regulators to self-synchronize or be  
synchronized to an external clock. The output voltage can be set as low as 1.225 V. Fault protection features  
include, current limiting, thermal shutdown, and remote shutdown capability. The device is available in the 16-pin  
HTSSOP package that features an exposed pad to help thermal dissipation.  
7.2 Functional Block Diagram  
The LM5575-Q1 device can be applied in numerous applications to efficiently step down a high, unregulated  
input voltage. The device is designed for telecom, industrial, and automotive power bus voltage ranges.  
V
IN  
LM5575  
7V œ 75V  
VIN  
VCC  
3
7V  
1
REGULATOR  
5 mA  
R1  
OPEN  
C8  
0.47  
1.225V  
C1  
1.0  
C2  
1.0  
THERMAL  
SHUTDOWN  
UVLO  
CLK  
2
SD  
STANDBY  
BST  
IN  
16  
V
SHUTDOWN  
DIS  
UVLO  
C7  
0.7V  
0.022  
SD  
DRIVER  
R2  
OPEN  
C12  
OPEN  
S
R
Q
10 mA  
L1  
47 mH  
LEVEL  
SHIFT  
10 SS  
C4  
5V  
1.225V  
0.7V  
14  
15  
SW  
Q
PWM  
0.01  
C11  
PRE  
330p  
C10  
120  
C9  
10  
D1  
C_LIMIT  
CLK  
R7  
10  
6
5
FB  
CMSH3-100  
C5  
0.01  
ERROR  
AMP  
TRACK  
SAMPLE  
and  
13  
IS  
2.1V  
1V/A  
C6  
open  
R4  
49.9k  
V
IN  
HOLD  
+
12  
9
PGND  
AGND  
COMP  
CLK  
Ir  
RAMP GENERATOR  
Ir = (10 mA x (VIN œ VOUT))  
+ 50 mA  
R5  
5.11k  
OSCILLATOR  
CLK  
RT  
7
RAMP  
OUT  
11  
SYNC  
R6  
1.65k  
8
4
SYNC  
C3  
470p  
R3  
21k  
7.3 Feature Description  
7.3.1 Shutdown and Standby  
The LM5575-Q1 contains a dual-level shutdown (SD) circuit. When the SD pin voltage is below 0.7 V, the  
regulator is in a low-current shutdown mode. When the SD pin voltage is greater than 0.7 V but less than 1.225  
V, the regulator is in standby mode. In standby mode, the VCC regulator is active but the output switch is  
disabled. When the SD pin voltage exceeds 1.225 V, the output switch is enabled and normal operation begins.  
An internal 5-µA pullup current source configures the regulator to be fully operational if the SD pin is left open.  
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Feature Description (continued)  
An external set-point voltage divider from VIN to GND can be used to set the operational input range of the  
regulator. The divider must be designed such that the voltage at the SD pin is greater than 1.225 V when VIN is  
in the desired operating range. The internal 5-µA pullup current source must be included in calculations of the  
external set-point divider. Hysteresis of 0.1 V is included for both the shutdown and standby thresholds. The SD  
pin is internally clamped with a 1-kresistor and an 8-V Zener clamp. The voltage at the SD pin should never  
exceed 14 V. If the voltage at the SD pin exceeds 8 V, the bias current increase at a rate of 1 mA/V.  
The SD pin can also be used to implement various remote enable and disable functions. Pulling the SD pin  
below the 0.7-V threshold totally disables the controller. If the SD pin voltage is higher than 1.225 V, the regulator  
is operational.  
7.3.2 Current Limit  
The LM5575-Q1 contains a unique current monitoring scheme for control and overcurrent protection. When set  
correctly, the emulated current sense signal provides a signal which is proportional to the buck switch current  
with a scale factor of 1 V/A. The emulated ramp signal is applied to the current limit comparator. If the emulated  
ramp signal exceeds 2.1 V (2.1 A), the present current cycle is terminated (cycle-by-cycle current limiting). In  
applications with small output inductance and high-input voltage, the switch current may overshoot due to the  
propagation delay of the current limit comparator. If an overshoot should occur, the diode current sampling circuit  
will detect the excess inductor current during the off-time of the buck switch. If the sample and hold DC level  
exceeds the 2.1-V current limit threshold, the buck switch will be disabled and skip pulses until the diode current  
sampling circuit detects the inductor current has decayed below the current limit threshold. This approach  
prevents current runaway conditions due to propagation delays or inductor saturation because the inductor  
current is forced to decay following the current overshoot.  
7.3.3 Soft Start  
The soft-start feature allows the regulator to gradually reach the initial steady-state operating point, thus reducing  
start-up stresses and surges. The internal soft-start current source, set to 10 µA, gradually increases the voltage  
of an external soft-start capacitor connected to the SS pin. The soft-start capacitor voltage is connected to the  
reference input of the error amplifier. Various sequencing and tracking schemes can be implemented using  
external circuits that limit or clamp the voltage level of the SS pin.  
In the event a fault is detected (overtemperature, Vcc UVLO, SD) the soft-start capacitor will be discharged.  
When the fault condition is no longer present, a new soft-start sequence will commence.  
7.3.4 Thermal Protection  
Internal Thermal Shutdown circuitry is provided to protect the integrated circuit in the event the maximum junction  
temperature is exceeded. When activated (typically at 180°C), the controller is forced into a low-power reset  
state, which disables the output driver and the bias regulator. This feature is provided to prevent catastrophic  
failures from accidental device overheating.  
7.4 Device Functional Modes  
7.4.1 High-Voltage Start-Up Regulator  
The LM5575-Q1 contains a dual-mode internal high-voltage start-up regulator that provides the VCC bias supply  
for the PWM controller and bootstrap MOSFET gate driver. The input pin (VIN) can be connected directly to the  
input voltage, as high as 75 V. For input voltages lower than 9 V, a low dropout switch connects VCC directly to  
VIN. In this supply range, VCC is approximately equal to VIN. For VIN voltage greater than 9 V, the low-dropout  
switch is disabled and the VCC regulator is enabled to maintain VCC at approximately 7 V. The wide operating  
range of 6 V to 75 V is achieved through the use of this dual-mode regulator.  
The output of the VCC regulator is current-limited to 25 mA. Upon power up, the regulator sources current into the  
capacitor connected to the VCC pin. When the voltage at the VCC pin exceeds the VCC UVLO threshold of 5.35  
V and the SD pin is greater than 1.225 V, the output switch is enabled and a soft-start sequence begins. The  
output switch remains enabled until VCC falls below 5 V or the SD pin falls below 1.125 V.  
10  
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Device Functional Modes (continued)  
An auxiliary supply voltage can be applied to the VCC pin to reduce the IC power dissipation. If the auxiliary  
voltage is greater than 7.3 V, the internal regulator essentially shuts off, reducing the IC power dissipation. The  
VCC regulator series pass transistor includes a diode between VCC and VIN that should not be forward biased in  
normal operation. Therefore the auxiliary VCC voltage should never exceed the VIN voltage.  
In high-voltage applications, take care to ensure the VIN pin does not exceed the absolute maximum voltage  
rating of 76 V. During line or load transients, voltage ringing on the VIN line that exceeds the absolute maximum  
ratings can damage the IC. Both careful printed-circuit board layout and the use of quality bypass capacitors  
located close to the VIN and GND pins are essential.  
V
IN  
9V  
V
CC  
7V  
5.25V  
Internal Enable Signal  
Figure 8. VIN and VCC Sequencing  
7.4.2 Oscillator and Sync Capability  
The LM5575-Q1 oscillator frequency is set by a single external resistor connected between the RT pin and the  
AGND pin. Place the RT resistor very close to the device and connected directly to the pins of the IC (RT and  
AGND). To set a desired oscillator frequency (F), the necessary value for the RT resistor can be calculated by  
Equation 1:  
-9  
1
F
- 580 x 10  
RT =  
135 x 10-12  
(1)  
The SYNC pin can be used to synchronize the internal oscillator to an external clock. The external clock must be  
of higher frequency than the free-running frequency set by the RT resistor. A clock circuit with an open-drain  
output is the recommended interface from the external clock to the SYNC pin. The clock pulse duration must be  
greater than 15 ns.  
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Device Functional Modes (continued)  
LM5575  
LM5575  
SYNC  
SYNC  
SW  
SYNC  
AGND  
CLK  
SW  
LM5575  
SYNC  
500 ns  
UP TO 5 TOTAL  
DEVICES  
Figure 9. Sync From External Clock  
Figure 10. Sync From Multiple Devices  
Multiple LM5575-Q1 devices can be synchronized together simply by connecting the SYNC pins together. In this  
configuration, all of the devices will be synchronized to the highest frequency device. The diagram in Figure 11  
shows the SYNC input and output features of the LM5575-Q1. The internal oscillator circuit drives the SYNC pin  
with a strong pulldown and weak pullup inverter. When the SYNC pin is pulled low either by the internal oscillator  
or an external clock, the ramp cycle of the oscillator is terminated and a new oscillator cycle begins. Thus, if the  
SYNC pins of several LM5575-Q1 ICs are connected together, the IC with the highest internal clock frequency  
pulls the connected SYNC pins low first and terminate the oscillator ramp cycles of the other ICs. The LM5575-  
Q1 with the highest programmed clock frequency will serve as the master and control the switching frequency of  
the all the devices with lower oscillator frequency.  
5V  
SYNC  
10k  
I = f(RT)  
2.5V  
Q
Q
S
R
DEADTIME  
ONE-SHOT  
Figure 11. Simplified Oscillator Block Diagram and Sync I/O Circuit  
7.4.3 Error Amplifier and PWM Comparator  
The internal high-gain error amplifier generates an error signal proportional to the difference between the  
regulated output voltage and an internal precision reference (1.225 V). The output of the error amplifier is  
connected to the COMP pin, which allows the user to provide loop compensation components, generally a type II  
network, as shown in Functional Block Diagram. This network creates a pole at DC, a zero and a noise-reducing,  
high-frequency pole. The PWM comparator compares the emulated current sense signal from the RAMP  
generator to the error amplifier output voltage at the COMP pin.  
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Device Functional Modes (continued)  
7.4.4 Ramp Generator  
The ramp signal used in the pulse-width modulator for current-mode control is typically derived directly from the  
buck switch current. This switch current corresponds to the positive slope portion of the output inductor current.  
Using this signal for the PWM ramp simplifies the control-loop-transfer function to a single pole response and  
provides inherent input voltage feed-forward compensation. The disadvantage of using the buck switch current  
signal for PWM control is the large leading edge spike due to circuit parasitics that must be filtered or blanked.  
Also, the current measurement may introduce significant propagation delays. The filtering, blanking time, and  
propagation delay limit the minimum achievable pulse width. In applications where the input voltage may be  
relatively large in comparison to the output voltage, controlling small pulse widths and duty cycles is necessary  
for regulation. The LM5575-Q1 uses a unique ramp generator, which does not actually measure the buck switch  
current but rather reconstructs the signal. Reconstructing or emulating the inductor current provides a ramp  
signal to the PWM comparator that is free of leading edge spikes and measurement or filtering delays. The  
current reconstruction is comprised of two elements; a sample and hold DC level and an emulated current ramp.  
RAMP  
t
ON  
(10 m x (V œ V  
) + 50 m) x  
OUT  
IN  
C
RAMP  
Sample and  
Hold DC Level  
1V/A  
T
ON  
Figure 12. Composition of Current Sense Signal  
The sample and hold DC level shown in Figure 12 is derived from a measurement of the re-circulating Schottky  
diode anode current. The re-circulating diode anode should be connected to the IS pin. The diode current flows  
through an internal current sense resistor between the IS and PGND pins. The voltage level across the sense  
resistor is sampled and held just prior to the onset of the next conduction interval of the buck switch. The diode  
current sensing and sample and hold provide the DC level of the reconstructed current signal. The positive slope  
inductor current ramp is emulated by an external capacitor connected from the RAMP pin to AGND and an  
internal voltage controlled current source. The ramp current source that emulates the inductor current is a  
function of the VIN and VOUT voltages per Equation 2:  
IRAMP = (10 µA × (VIN – VOUT)) + 50 µA  
(2)  
Proper selection of the RAMP capacitor depends upon the selected value of the output inductor. The value of  
CRAMP can be selected from Equation 3:  
CRAMP = L × 10–5  
where  
L is the value of the output inductor in Henrys  
(3)  
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Device Functional Modes (continued)  
With this value, the scale factor of the emulated current ramp is approximately equal to the scale factor of the DC  
level sample and hold (1 V/A). Locate the CRAMP capacitor very close to the device and connect directly to the  
pins of the IC (RAMP and AGND).  
For duty cycles greater than 50%, peak-current-mode control circuits are subject to sub-harmonic oscillation.  
Sub-harmonic oscillation is normally characterized by observing alternating wide and narrow pulses at the switch  
node. Add a fixed slope voltage ramp (slope compensation) to the current sense signal to prevent this oscillation.  
The 50 µA of offset current provided from the emulated current source adds some fixed slope to the ramp signal.  
In some high-output voltage, high duty cycle applications, additional slope may be required. In these applications,  
a pullup resistor may be added between the VCC and RAMP pins to increase the ramp slope compensation.  
For VOUT > 7.5 V:  
Calculate optimal slope current, IOS = VOUT × 10 µA/V.  
For example, at VOUT = 10 V, IOS = 100 µA.  
Install a resistor from the RAMP pin to VCC  
RRAMP = VCC / (IOS – 50 µA)  
:
(4)  
VCC  
R
RAMP  
RAMP  
C
RAMP  
Figure 13. RRAMP to VCC for VOUT > 7.5 V  
7.4.5 BOOST Pin  
The LM5575-Q1 integrates an N-Channel buck switch and associated floating high-voltage level shift and gate  
driver. This gate-driver circuit works in conjunction with an internal diode and an external bootstrap capacitor. TI  
recommends a 0.022-µF ceramic capacitor, connected with short traces between the BST pin and SW pin.  
During the off-time of the buck switch, the SW pin voltage is approximately –0.5 V, and the bootstrap capacitor is  
charged from VCC through the internal bootstrap diode. When operating with a high PWM duty cycle, the buck  
switch is forced off each cycle for 500 ns to ensure that the bootstrap capacitor is recharged.  
Under very light-load conditions or when the output voltage is pre-charged, the SW voltage does not remain low  
during the off-time of the buck switch. If the inductor current falls to zero and the SW pin rises, the bootstrap  
capacitor does not receive sufficient voltage to operate the buck switch gate driver. For these applications, the  
PRE pin can be connected to the SW pin to pre-charge the bootstrap capacitor. The internal pre-charge  
MOSFET and diode connected between the PRE pin and PGND turns on each cycle for 250 ns just prior to the  
onset of a new switching cycle. If the SW pin is at a normal negative voltage level (continuous conduction mode  
(CCM)), then no current flows through the pre-charge MOSFET/diode.  
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Device Functional Modes (continued)  
7.4.6 Maximum Duty Cycle and Input Dropout Voltage  
There is a forced off-time of 500 ns implemented each cycle to ensure sufficient time for the diode current to be  
sampled. This forced off-time limits the maximum duty cycle of the buck switch. The maximum duty cycle varies  
with the operating frequency.  
DMAX = 1 – Fs × 500 ns  
where  
Fs is the oscillator frequency.  
(5)  
Limiting the maximum duty cycle will raise the input dropout voltage. The input dropout voltage is the lowest input  
voltage required to maintain regulation of the output voltage. Equation 6 calculates an approximation of the input  
dropout voltage.  
Vout + VD  
VinMIN  
=
1 - Fs x 500 ns  
where  
VD is the voltage drop across the re-circulatory diode.  
(6)  
Operating at high switching frequency raises the minimum input voltage necessary to maintain regulation.  
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8 Application and Implementation  
NOTE  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
8.1 Application Information  
8.1.1 Bias Power Dissipation Reduction  
Buck regulators operating with high input voltage can dissipate an appreciable amount of power for the bias of  
the IC. The VCC regulator must step down the input voltage VIN to a nominal VCC level of 7 V. The large voltage  
drop across the VCC regulator translates into a large power dissipation within the VCC regulator. There are several  
techniques that can significantly reduce this bias regulator power dissipation. Figure 14 and Figure 15 depict two  
methods to bias the IC from the output voltage. In each case, the internal VCC regulator is used to initially bias  
the VCC pin. After the output voltage is established, the VCC pin potential is raised higher than the nominal 7-V  
regulation level, which effectively disables the internal VCC regulator. The voltage applied to the VCC pin should  
never exceed 14 V. The VCC voltage should never be larger than the VIN voltage.  
LM5575  
BST  
VOUT  
SW  
L1  
C
OUT  
D1  
IS  
GND  
VCC  
D2  
Figure 14. VCC Bias From VOUT for 8 V < VOUT < 14 V  
LM5575  
BST  
VOUT  
L1  
SW  
D1  
C
OUT  
IS  
GND  
D2  
VCC  
Figure 15. VCC Bias With Additional Winding on the Output Inductor  
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8.2 Typical Application  
V
IN  
LM5575  
7V œ 75V  
VIN  
VCC  
3
7V  
1
REGULATOR  
5 mA  
R1  
OPEN  
C8  
0.47  
1.225V  
C1  
1.0  
C2  
1.0  
THERMAL  
SHUTDOWN  
UVLO  
CLK  
2
SD  
STANDBY  
BST  
IN  
16  
V
SHUTDOWN  
DIS  
UVLO  
C7  
0.7V  
0.022  
SD  
DRIVER  
R2  
OPEN  
C12  
OPEN  
S
R
Q
10 mA  
L1  
47 mH  
LEVEL  
SHIFT  
10 SS  
C4  
5V  
1.225V  
0.7V  
14  
15  
SW  
Q
PWM  
0.01  
C11  
PRE  
330p  
C10  
120  
C9  
10  
D1  
C_LIMIT  
CLK  
R7  
10  
6
5
FB  
CMSH3-100  
C5  
0.01  
ERROR  
AMP  
TRACK  
SAMPLE  
and  
13  
IS  
2.1V  
1V/A  
C6  
open  
R4  
49.9k  
V
IN  
HOLD  
+
12  
9
PGND  
AGND  
COMP  
CLK  
Ir  
RAMP GENERATOR  
Ir = (10 mA x (VIN œ VOUT))  
+ 50 mA  
R5  
5.11k  
OSCILLATOR  
CLK  
RT  
7
RAMP  
OUT  
11  
SYNC  
R6  
1.65k  
8
4
SYNC  
C3  
470p  
R3  
21k  
Figure 16. Typical Application Circuit  
8.2.1 Design Requirements  
The circuit shown in Functional Block Diagram is configured for the following specifications:  
VOUT = 5 V  
VIN = 7 V to 75 V  
Fs = 300 kHz  
Minimum load current (for CCM) = 200 mA  
Maximum load current = 1.5 A  
8.2.2 Detailed Design Procedure  
8.2.2.1 Custom Design With WEBENCH® Tools  
Click here to create a custom design using the LM5575-Q1 device with the WEBENCH® Power Designer.  
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.  
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.  
3. Compare the generated design with other possible solutions from Texas Instruments.  
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time  
pricing and component availability.  
In most cases, these steps are available:  
Run electrical simulations to see important waveforms and circuit performance  
Run thermal simulations to understand board thermal performance  
Export customized schematic and layout into popular CAD formats  
Print PDF reports for the design, and share the design with colleagues  
Get more information about WEBENCH tools at www.ti.com/WEBENCH.  
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Typical Application (continued)  
8.2.2.2 External Components  
The procedure for calculating the external components is illustrated with the following design example.  
8.2.2.3 R3 (RT)  
RT sets the oscillator switching frequency. Generally, higher-frequency applications are smaller but have higher  
losses. Operation at 300 kHz was selected for this example as a reasonable compromise for both small size and  
high efficiency. The value of RT for 300-kHz switching frequency can be calculated as Equation 7.  
[(1 / 300 x 103) œ 580 x 10-9]  
RT =  
135 x 10-12  
(7)  
The nearest standard value of 21 kwas chosen for RT.  
8.2.2.4 L1  
The inductor value is determined based on the operating frequency, load current, ripple current, and the  
minimum and maximum input voltage (VIN(min), VIN(max)).  
IPK+  
IO  
IRIPPLE  
IPK-  
0 mA  
1/Fs  
Figure 17. Inductor Current Waveform  
To keep the circuit in CCM, the maximum ripple current IRIPPLE must be less than twice the minimum load  
current, or 0.4 Ap-p. Using this value of ripple current, the value of inductor (L1) is calculated using Equation 8  
and Equation 9:  
VOUT x (VIN(max) œ VOUT  
IRIPPLE x FS x VIN(max)  
5V x (75V œ 5V)  
)
L1 =  
(8)  
(9)  
L1 =  
= 39 mH  
0.4A x 300 kHz x 75V  
This procedure provides a guide to select the value of L1. The nearest standard value (47 µH) is used. L1 must  
be rated for the peak current (IPK+) to prevent saturation. During normal loading conditions, the peak current  
occurs at maximum load current plus maximum ripple. During an overload condition, the peak current is limited to  
2.1 A nominal (2.5 A maximum). The selected inductor has a conservative 3.25-Amp saturation current rating.  
The saturation rating is defined by inductor manufacturers as the current necessary for the inductance to reduce  
by 30%, at 20°C.  
8.2.2.5 C3 (CRAMP  
)
With the inductor value selected, Equation 10 calculates the value of C3 (CRAMP) necessary for the emulation  
ramp circuit:  
CRAMP = L × 10–5  
where  
L is in Henrys.  
(10)  
With L1 selected for 47 µH, the recommended value for C3 is 470 pF.  
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Typical Application (continued)  
8.2.2.6 C9, C10  
The output capacitors, C9 and C10, smooth the inductor ripple current and provide a source of charge for  
transient loading conditions. For this design a 10-µF ceramic capacitor and a 120-µF AL organic capacitor were  
selected. The ceramic capacitor provides ultra-low ESR to reduce the output ripple voltage and noise spikes,  
while the AL capacitor provides a large bulk capacitance in a small volume for transient loading conditions.  
Equation 11 calculates an approximation for the output ripple voltage.  
1
DVOUT = DI x  
ESR +  
«
L
8 x FS x COUT  
(11)  
8.2.2.7 D1  
A Schottky type re-circulating diode is required for all LM5575-Q1 applications. Ultra-fast diodes are not  
recommended and may result in damage to the IC due to reverse recovery current transients. The near ideal  
reverse recovery characteristics and low forward-voltage drop are particularly important diode characteristics for  
high-input voltage and low-output voltage applications common to the LM5575-Q1. The reverse recovery  
characteristic determines how long the current surge lasts each cycle when the buck switch is turned on. The  
reverse recovery characteristics of Schottky diodes minimize the peak instantaneous power in the buck switch  
occurring during turnon each cycle. The resulting switching losses of the buck switch are significantly reduced  
when using a Schottky diode. Select the reverse breakdown rating for the maximum VIN, plus some safety  
margin.  
The forward voltage drop has a significant impact on the conversion efficiency, especially for applications with a  
low output voltage. Rated current for diodes vary widely from various manufacturers. The worst case is to  
assume a short-circuit load condition. In this case the diode carries the output current almost continuously. For  
the LM5575-Q1 this current can be as high as 2.1 A. Assuming a worst-case, 1-V drop across the diode, the  
maximum diode power dissipation can be as high as 2.1 W. For the reference design a 100-V Schottky in a SMC  
package was selected.  
8.2.2.8 C1, C2  
The regulator supply voltage has a large source impedance at the switching frequency. Good-quality input  
capacitors are necessary to limit the ripple voltage at the VIN pin while supplying most of the switch current  
during the on-time. When the buck switch turns on, the current into the VIN pin steps to the lower peak of the  
inductor current waveform, ramps up to the peak value, then drops to zero at turnoff. The average current into  
VIN during the on-time is the load current. Select the input capacitance for RMS current rating and minimum  
ripple voltage. A good approximation for the required ripple current rating necessary is IRMS > IOUT / 2.  
Select quality ceramic capacitors with a low ESR for the input filter. To allow for capacitor tolerances and voltage  
effects, two 1-µF, 100-V ceramic capacitors are used. If step input voltage transients are expected near the  
maximum rating of the LM5575-Q1, a careful evaluation of ringing and possible spikes at the device VIN pin  
must be completed. An additional damping network or input voltage clamp may be required in these cases.  
8.2.2.9 C8  
The capacitor at the VCC pin provides noise filtering and stability for the VCC regulator. The recommended value  
of C8 is no smaller than 0.1 µF and should be a good-quality, low-ESR, ceramic capacitor. A value of 0.47 µF  
was selected for this design.  
8.2.2.10 C7  
The bootstrap capacitor between the BST and the SW pins supplies the gate current to charge the buck switch  
gate at turnon. The recommended value of C7 is 0.022 µF and should be a good-quality, low-ESR, ceramic  
capacitor.  
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Typical Application (continued)  
8.2.2.11 C4  
The capacitor at the SS pin determines the soft-start time; that is, the time for the reference voltage and the  
output voltage, to reach the final regulated value. Equation 12 determines the time.  
C4 x 1.225V  
tss  
=
10 mA  
(12)  
For this application, a C4 value of 0.01 µF was chosen which corresponds to a soft-start time of 1 ms.  
8.2.2.12 R5, R6  
R5 and R6 set the output voltage level. The ratio of these resistors is calculated from Equation 13:  
R5/R6 = (VOUT / 1.225V) – 1  
(13)  
For a 5-V output, the R5/R6 ratio calculates to 3.082. Choose the resistors from standard value resistors. A good  
starting point is selection in the range of 1 kto 10 k. Values of 5.11 kfor R5,and 1.65 kfor R6, were  
selected.  
8.2.2.13 R1, R2, C12  
A voltage divider can be connected to the SD pin to set a minimum operating voltage VIN(min) for the regulator. If  
this feature is required, the easiest approach to select the divider resistor values is to select a value for R1  
(between 10 kand 100 krecommended) then calculate R2 from Equation 14:  
«
R1  
R2 = 1.225 x  
V
IN(min) + (5 x 10-6 x R1) œ 1.225  
(14)  
Capacitor C12 provides filtering for the divider. The voltage at the SD pin should never exceed 8 V. When using  
an external set-point divider, it may be necessary to clamp the SD pin at high input-voltage conditions. The  
reference design uses the full range of the LM5575-Q1 (6 V to 75 V); therefore, these components can be  
omitted. With the SD pin open circuit the LM5575-Q1 responds once the VCC UVLO threshold is satisfied.  
8.2.2.14 R7, C11  
A snubber network across the power diode reduces ringing and spikes at the switching node. Excessive ringing  
and spikes can cause erratic operation and couple spikes and noise to the output. Voltage spikes beyond the  
rating of the LM5575-Q1 or the re-circulating diode can damage these devices. TI recommends to select the  
values for the snubber through empirical methods. First, make sure the lead lengths for the snubber connections  
are very short. For the current levels typical for the LM5575-Q1, a resistor value between 5 and 20 Ω is  
adequate. Increasing the value of the snubber capacitor results in more damping but higher losses. Select a  
minimum value of C11 that provides adequate damping of the SW pin waveform at high load.  
8.2.2.15 R4, C5, C6  
These components configure the error amplifier gain characteristics to accomplish a stable overall loop gain. One  
advantage of current mode control is the ability to close the loop with only two feedback components, R4 and C5.  
The overall loop gain is the product of the modulator gain and the error amplifier gain. The DC modulator gain of  
the LM5575-Q1 is calculated by Equation 15:  
DC Gain(MOD) = Gm(MOD) × RLOAD = 1 × RLOAD  
(15)  
The dominant low frequency pole of the modulator is determined by the load resistance (RLOAD,) and output  
capacitance (COUT). The corner frequency of this pole is calculated by Equation 16:  
fp(MOD) = 1 / (2π RLOAD COUT  
)
(16)  
For RLOAD = 5 and COUT = 130 µF then fp(MOD) = 245 Hz  
DC Gain(MOD) = 1 × 5 = 14 dB  
For the design example of Functional Block Diagram, the measured modulator gain vs. frequency characteristic  
is shown in Figure 18.  
20  
Copyright © 2008–2019, Texas Instruments Incorporated  
 
 
 
 
 
LM5575-Q1  
www.ti.com.cn  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
Typical Application (continued)  
REF LEVEL /DIV  
0.000 dB  
0.0 deg  
10.000 dB  
45.000 deg  
GAIN  
0
PHASE  
100  
1k  
10k  
100k  
START 100.000 Hz  
STOP 100 000.000 Hz  
RLOAD = 5 Ω  
COUT = 130 µF  
Figure 18. Gain and Phase of Modulator  
Components R4 and C5 configure the error amplifier as a type II configuration which has a pole at DC and a  
zero at fZ = 1 / (2πR4C5). The error amplifier zero cancels the modulator pole and leaves a single pole response  
at the crossover frequency of the loop gain. A single pole response at the crossover frequency yields a very  
stable loop with 90 degrees of phase margin.  
For the design example, a target loop bandwidth (crossover frequency) of 15 kHz was selected. Select the  
compensation network zero (fZ) at least an order of magnitude less than the target crossover frequency. This  
constrains the product of R4 and C5 for a desired compensation network zero 1 / (2π R4 C5) to be less than 2  
kHz. If the user increases R4 while they proportionally decrease C5, the error amp gain increases. Conversely, if  
the user decreases R4 while proportionally they increase C5, the error amp gain decreases. For the design  
example, C5 was selected for 0.01 µF and R4 was selected for 49.9 k. These values configure the  
compensation network zero at 320 Hz. The error amp gain at frequencies greater than fZ is: R4 / R5, which is  
approximately 10 (20 dB).  
REF LEVEL /DIV  
0.000 dB  
0.0 deg  
10.000 dB  
45.000 deg  
PHASE  
GAIN  
0
100  
1k  
10k  
START 50.000 Hz  
STOP 50 000.000 Hz  
Figure 19. Error Amplifier Gain and Phase  
The overall loop can be predicted as the sum (in dB) of the modulator gain and the error amp gain.  
Copyright © 2008–2019, Texas Instruments Incorporated  
21  
LM5575-Q1  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
www.ti.com.cn  
Typical Application (continued)  
REF LEVEL /DIV  
0.000 dB  
0.0 deg  
10.000 dB  
45.000 deg  
GAIN  
PHASE  
0
100  
1k  
10k  
100k  
START 100.000 Hz  
STOP 100 000.000 Hz  
Figure 20. Overall Loop Gain and Phase  
If a network analyzer is available, the modulator gain can be measured, and the error amplifier gain can be  
configured for the desired loop transfer function. If a network analyzer is not available, the error amplifier  
compensation components can be designed with the guidelines given. Step-load transient tests can be  
performed to verify acceptable performance. The step-load goal is minimum overshoot with a damped response.  
C6 can be added to the compensation network to decrease noise susceptibility of the error amplifier. The value  
of C6 must be sufficiently small because the addition of this capacitor adds a pole in the error amplifier transfer  
function. This pole must be well beyond the loop crossover frequency. A good approximation of the location of  
the pole added by C6 is: fp2 = fz × C5 / C6.  
8.2.3 Application Curves  
1000  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 24V  
IN  
100  
V
= 7V  
IN  
V
= 48V  
V
IN  
= 75V  
IN  
10  
1
10  
100  
1000  
0.25  
0.5  
0.75  
1
1.25  
1.5  
R
T
(kW)  
I
(A)  
OUT  
Figure 21. Oscillator Frequency vs RT  
Figure 22. Demoboard Efficiency vs IOUT and VIN  
22  
Copyright © 2008–2019, Texas Instruments Incorporated  
LM5575-Q1  
www.ti.com.cn  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
9 Power Supply Recommendations  
The LM5575-Q1 is designed to operate from an input voltage supply range between 6 V and 75 V. This input  
supply must be able to withstand the maximum input current and maintain a voltage higher than 6 V. The  
resistance of the input supply rail must be low enough that an input current transient does not cause a high  
enough drop at the LM5575-Q1 supply voltage. That drop in supply voltage can cause a false UVLO fault trigger  
and system reset. If the input supply is placed more than a few inches from the LM5575-Q1, additional bulk  
capacitance may be required in addition to the ceramic bypass capacitors. The amount of bulk capacitance is not  
critical, but a 47-μF or 100-μF electrolytic capacitor is a typical choice.  
10 Layout  
10.1 Layout Guidelines  
The circuit in Functional Block Diagram serves as both a block diagram of the LM5575-Q1 and a typical  
application board schematic for the LM5575-Q1. In a buck regulator, there are two loops where currents are  
switched very fast. The first loop starts from the input capacitors, to the regulator VIN pin, to the regulator SW  
pin, and then to the inductor then out to the load. The second loop starts from the output capacitor ground, to the  
regulator PGND pins, to the regulator IS pins, to the diode anode, to the inductor and then out to the load. The  
user can minimize the loop area of these two loops to reduce the stray inductance and to minimize noise and  
possible erratic operation. A ground plane in the printed-circuit board (PCB) is recommended as a means to  
connect the input filter capacitors to the output filter capacitors and the PGND pins of the regulator. Connect all  
of the low-power ground connections (CSS, RT, CRAMP) directly to the regulator AGND pin. Connect the AGND  
and PGND pins together through the top-side copper area that covers the entire underside of the device. Place  
several vias in this underside copper area to the ground plane.  
The two highest power-dissipating components are the re-circulating diode and the LM5575-Q1 regulator IC. The  
easiest method to determine the power dissipated within the LM5575-Q1 is to measure the total conversion  
losses (Pin – Pout) then subtract the power losses in the Schottky diode, output inductor, and snubber resistor.  
Equation 17 calculates an approximation for the Schottky diode loss.  
P = (1 – D) × IOUT × Vfwd  
(17)  
(18)  
(19)  
Equation 18 calculates an approximation for the output inductor power.  
P = IOUT2 × R x 1.1  
where  
R is the DC resistance of the inductor and the 1.1 factor is an approximation for the AC losses  
If a snubber is used, Equation 19 calculates an approximation for the damping resistor power dissipation.  
P = VIN2 × Fsw × Csnub  
where  
Fsw is the switching frequency and Csnub is the snubber capacitor  
The regulator has an exposed thermal pad to help power dissipation. Add several vias under the device to the  
ground plane to greatly reduce the regulator junction temperature. Select a diode with an exposed pad to help  
the power dissipation of the diode.  
The most significant variables that affect the power dissipated by the LM5575-Q1 are the output current, input  
voltage, and operating frequency. The power dissipated while the device operates near the maximum output  
current and maximum input voltage can be appreciable. The operating frequency of the LM5575-Q1 evaluation  
board has been designed for 300 kHz. When the device operates at 1.5-A output current with a 70-V input, the  
power dissipation of the LM5575-Q1 regulator is approximately 1.25 W.  
Copyright © 2008–2019, Texas Instruments Incorporated  
23  
 
 
 
LM5575-Q1  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
www.ti.com.cn  
10.2 Layout Examples  
Figure 23. Silkscreen  
Figure 24. Component Side  
Figure 25. Solder Side  
24  
版权 © 2008–2019, Texas Instruments Incorporated  
LM5575-Q1  
www.ti.com.cn  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
10.3 Thermal Considerations  
The junction-to-ambient thermal resistance of the LM5575-Q1 varies with the application. The most significant  
variables are the area of copper in the PCB, the number of vias under the IC exposed pad, and the amount of  
forced air cooling provided. As shown in the evaluation board artwork, the area under the LM5575-Q1  
(component side) is covered with copper and there are 5 connection vias to the solder-side ground plane.  
Additional vias under the IC have diminishing value as more vias are added. The integrity of the solder  
connection from the IC exposed pad to the PCB is critical. Excessive voids will greatly diminish the thermal  
dissipation capacity. The junction-to-ambient thermal resistance of the LM5575-Q1 mounted in the evaluation  
board varies from 50°C/W with no airflow to 28°C/W with 900 LFM (linear feet per minute). With a 25°C ambient  
temperature and no airflow, the predicted junction temperature for the LM5575-Q1 is 25 + (50 × 1.25) = 88°C. If  
the evaluation board operates at 1.5-A output current, 70-V input voltage, and a high ambient temperature for a  
prolonged period of time, the thermal shutdown protection within the IC may activate. The IC turns off to allow  
the junction to cool, followed by restart with the soft-start capacitor reset to zero.  
11 器件和文档支持  
11.1 器件支持  
11.1.1 使用 WEBENCH® 工具创建定制设计  
请单击此处,使用 LM5575-Q1 器件并借助 WEBENCH® 电源设计器创建定制设计。  
1. 首先输入输入电压 (VIN)、输出电压 (VOUT) 和输出电流 (IOUT) 要求。  
2. 使用优化器拨盘优化该设计的关键参数,如效率、尺寸和成本。  
3. 将生成的设计与德州仪器 (TI) 的其他可行的解决方案进行比较。  
WEBENCH 电源设计器可提供定制原理图以及罗列实时价格和组件供货情况的物料清单。  
在多数情况下,可执行以下操作:  
运行电气仿真,观察重要波形以及电路性能  
运行热性能仿真,了解电路板热性能  
将定制原理图和布局方案以常用 CAD 格式导出  
打印设计方案的 PDF 报告并与同事共享  
有关 WEBENCH 工具的详细信息,请访问 www.ti.com.cn/WEBENCH。  
11.2 接收文档更新通知  
要接收文档更新通知,请导航至 TI.com.cn 上的器件产品文件夹。单击右上角的通知我 进行注册,即可每周接收产  
品信息更改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。  
11.3 社区资源  
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective  
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of  
Use.  
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration  
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help  
solve problems with fellow engineers.  
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and  
contact information for technical support.  
11.4 商标  
E2E is a trademark of Texas Instruments.  
WEBENCH is a registered trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
版权 © 2008–2019, Texas Instruments Incorporated  
25  
LM5575-Q1  
ZHCSHU8F OCTOBER 2008REVISED JULY 2019  
www.ti.com.cn  
11.5 静电放电警告  
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损  
伤。  
11.6 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
12 机械、封装和可订购信息  
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更,恕不另行通知,且  
不会对此文档进行修订。如需获取此数据表的浏览器版本,请查阅左侧的导航栏。  
26  
版权 © 2008–2019, Texas Instruments Incorporated  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
LM5575Q0MH/NOPB  
LM5575Q0MHX/NOPB  
LM5575QMH/NOPB  
LM5575QMHX/NOPB  
ACTIVE  
HTSSOP  
HTSSOP  
HTSSOP  
HTSSOP  
PWP  
16  
16  
16  
16  
92  
RoHS & Green  
SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 150  
-40 to 150  
-40 to 125  
-40 to 125  
LM5575  
Q0MH  
ACTIVE  
ACTIVE  
ACTIVE  
PWP  
2500 RoHS & Green  
92 RoHS & Green  
2500 RoHS & Green  
SN  
SN  
SN  
LM5575  
Q0MH  
PWP  
LM5575  
QMH  
PWP  
LM5575  
QMH  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
26-Apr-2023  
TAPE AND REEL INFORMATION  
REEL DIMENSIONS  
TAPE DIMENSIONS  
K0  
P1  
W
B0  
Reel  
Diameter  
Cavity  
A0  
A0 Dimension designed to accommodate the component width  
B0 Dimension designed to accommodate the component length  
K0 Dimension designed to accommodate the component thickness  
Overall width of the carrier tape  
W
P1 Pitch between successive cavity centers  
Reel Width (W1)  
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  
Sprocket Holes  
Q1 Q2  
Q3 Q4  
Q1 Q2  
Q3 Q4  
User Direction of Feed  
Pocket Quadrants  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LM5575Q0MHX/NOPB HTSSOP PWP  
LM5575QMHX/NOPB HTSSOP PWP  
16  
16  
2500  
2500  
330.0  
330.0  
12.4  
12.4  
6.9  
6.9  
5.6  
5.6  
1.6  
1.6  
8.0  
8.0  
12.0  
12.0  
Q1  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
26-Apr-2023  
TAPE AND REEL BOX DIMENSIONS  
Width (mm)  
H
W
L
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LM5575Q0MHX/NOPB  
LM5575QMHX/NOPB  
HTSSOP  
HTSSOP  
PWP  
PWP  
16  
16  
2500  
2500  
367.0  
367.0  
367.0  
367.0  
35.0  
35.0  
Pack Materials-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
26-Apr-2023  
TUBE  
T - Tube  
height  
L - Tube length  
W - Tube  
width  
B - Alignment groove width  
*All dimensions are nominal  
Device  
Package Name Package Type  
Pins  
SPQ  
L (mm)  
W (mm)  
T (µm)  
B (mm)  
LM5575Q0MH/NOPB  
LM5575QMH/NOPB  
PWP  
PWP  
HTSSOP  
HTSSOP  
16  
16  
92  
92  
495  
495  
8
8
2514.6  
2514.6  
4.06  
4.06  
Pack Materials-Page 3  
PACKAGE OUTLINE  
PWP0016A  
PowerPAD TM HTSSOP - 1.2 mm max height  
S
C
A
L
E
2
.
4
0
0
PLASTIC SMALL OUTLINE  
C
6.6  
6.2  
TYP  
SEATING PLANE  
PIN 1 ID  
AREA  
A
0.1 C  
14X 0.65  
16  
1
2X  
5.1  
4.9  
4.55  
NOTE 3  
8
9
0.30  
16X  
0.19  
4.5  
4.3  
B
0.1  
C A B  
(0.15) TYP  
SEE DETAIL A  
4X 0.166 MAX  
NOTE 5  
2X 1.34 MAX  
NOTE 5  
THERMAL  
PAD  
0.25  
GAGE PLANE  
3.3  
2.7  
17  
1.2 MAX  
0.15  
0.05  
0 - 8  
0.75  
0.50  
DETAIL A  
TYPICAL  
(1)  
3.3  
2.7  
4214868/A 02/2017  
PowerPAD is a trademark of Texas Instruments.  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed 0.15 mm per side.  
4. Reference JEDEC registration MO-153.  
5. Features may not be present.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
PWP0016A  
PowerPAD TM HTSSOP - 1.2 mm max height  
PLASTIC SMALL OUTLINE  
(3.4)  
NOTE 9  
SOLDER MASK  
DEFINED PAD  
(3.3)  
16X (1.5)  
SYMM  
SEE DETAILS  
1
16  
16X (0.45)  
(1.1)  
TYP  
17  
SYMM  
(3.3)  
(5)  
NOTE 9  
14X (0.65)  
8
9
(
0.2) TYP  
VIA  
(1.1) TYP  
METAL COVERED  
BY SOLDER MASK  
(5.8)  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:10X  
METAL UNDER  
SOLDER MASK  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL  
EXPOSED  
METAL  
EXPOSED  
METAL  
0.05 MIN  
ALL AROUND  
0.05 MAX  
ALL AROUND  
SOLDER MASK  
DEFINED  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
PADS 1-16  
4214868/A 02/2017  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
8. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature  
numbers SLMA002 (www.ti.com/lit/slma002) and SLMA004 (www.ti.com/lit/slma004).  
9. Size of metal pad may vary due to creepage requirement.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
PWP0016A  
PowerPAD TM HTSSOP - 1.2 mm max height  
PLASTIC SMALL OUTLINE  
(3.3)  
BASED ON  
0.125 THICK  
STENCIL  
16X (1.5)  
(R0.05) TYP  
1
16  
16X (0.45)  
(3.3)  
17  
SYMM  
BASED ON  
0.125 THICK  
STENCIL  
14X (0.65)  
9
8
SYMM  
(5.8)  
METAL COVERED  
BY SOLDER MASK  
SEE TABLE FOR  
DIFFERENT OPENINGS  
FOR OTHER STENCIL  
THICKNESSES  
SOLDER PASTE EXAMPLE  
EXPOSED PAD  
100% PRINTED SOLDER COVERAGE BY AREA  
SCALE:10X  
STENCIL  
THICKNESS  
SOLDER STENCIL  
OPENING  
0.1  
3.69 X 3.69  
3.3 X 3.3 (SHOWN)  
3.01 X 3.01  
0.125  
0.15  
0.175  
2.79 X 2.79  
4214868/A 02/2017  
NOTES: (continued)  
10. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
11. Board assembly site may have different recommendations for stencil design.  
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