LM614-MIL [TI]

军用级、四路、36V、0.8MHz 运算放大器和可编程电压基准;


型号：	LM614-MIL
厂家：	TEXAS INSTRUMENTS
描述：	军用级、四路、36V、0.8MHz 运算放大器和可编程电压基准放大器运算放大器
文件：	总24页 (文件大小：1120K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LM614

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SNOSC21C –MAY 1998–REVISED MARCH 2013

LM614 Quad Operational Amplifier and Adjustable Reference

Check for Samples: LM614

FEATURES

DESCRIPTION

The LM614 consists of four op-amps and

Op Amp

programmable voltage reference in a 16-pin package.

The op-amp out-performs most single-supply op-

amps by providing higher speed and bandwidth along

with low supply current. This device was specifically

designed to lower cost and board space requirements

in transducer, test, measurement and data acquisition

systems.

•

Low Operating Current: 450μA

Wide Supply Voltage Range: 4V to 36V

Wide Common-Mode Range: V ⁻to (V⁺− 1.8V)

Wide Differential Input Voltage: ±36V

Reference

•

Adjustable Output Voltage: 1.2V to 5.0V

Initial Tolerance: ±2.0%

Combining a stable voltage reference with four wide

output swing op-amps makes the LM614 ideal for

single supply transducers, signal conditioning and

bridge driving where large common-mode-signals are

common. The voltage reference consists of a reliable

band-gap design that maintains low dynamic output

impedance (1Ω typical), initial tolerance (2.0%), and

the ability to be programmed from 1.2V to 5.0V via

two external resistors. The voltage reference is very

stable even when driving large capacitive loads, as

are commonly encountered in CMOS data acquisition

systems.

Wide Operating Current Range: 17μA to

20mA

•

Tolerant of Load Capacitance

APPLICATIONS

•

Transducer Bridge Driver and Signal

Processing

•

Process and Mass Flow Control Systems

Power Supply Voltage Monitor

As a member of TI's new Super-Block™ family, the

LM614 is a space-saving monolithic alternative to a

multichip solution, offering a high level of integration

without sacrificing performance.

Buffered Voltage References for A/D's

Connection Diagram

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Super-Block is a trademark of dcl_owner.

All other trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

LM614

SNOSC21C –MAY 1998–REVISED MARCH 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings⁽¹⁾⁽²⁾

Voltage on Any Pins except V_R

36V (Max)⁽³⁾

(referred to V⁻pin)

−0.3V (Min)⁽⁴⁾

Current through Any Input Pin & V_RPin

±20

Differential Input Voltage

LM614I

LM614C

±36V

±32V

Storage Temperature Range

−65°C ≤ T_J≤ +150°C

Maximum Junction Temperature

150°C

220°C

±1kV

Thermal Resistance, Junction-to-Ambient⁽⁵⁾

Soldering Information (Soldering, 10 sec.)

ESD Tolerance⁽⁶⁾

(1) Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply

when operating the device beyond its rated operating conditions.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3) Input voltage above V+ is allowed.

(4) More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a

diode drop below V−, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below

the Maximum Rating. Operation is undefined and unpredictable when any parasitic diode or transistor is conducting.

(5) Junction temperature may be calculated using TJ = TA + P DθjA. The given thermal resistance is worst-case for packages in sockets in

still air. For packages soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal θjA is

90°C/W for the DW package.

(6) Human body model, 100 pF discharged through a 1.5 kΩ resistor.

Operating Temperature Range

LM614I

−40°C ≤ T_J≤ +85°C

0°C ≤ T_J≤ +70°C

LM614C

Electrical Characteristics

These specifications apply for V⁻= GND = 0V, V⁺= 5V, V_CM= V_OUT= 2.5V, I_R= 100μA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T_J= 25°C; limits in Boldface type apply over the Operating

Temperature Range.

Symbol

Parameter

Conditions

Typ⁽¹⁾

LM614I

LM614C

Limits⁽²⁾

Units

I_S

Total Supply Current

Supply Voltage Range

R_LOAD= ∞,

450

550

1000

1070

μA max

4V ≤ V⁺≤ 36V (32V for LM614C)

V_S

2.2

2.9

2.8

V min

V max

OPERATIONAL AMPLIFIER

V_OS1V_OSOver Supply

4V ≤ V⁺≤ 36V

1.5

2.0

5.0

7.0

mV max

(4V ≤ V⁺≤ 32V for LM614C)

V_OS2

V_OSOver V_CM

V _CM= 0V through V_CM

1.0

1.5

5.0

7.0

mV max

(V ⁺− 1.8V), V⁺= 30V

(2)

V_OS3

ΔT

Average V_OSDrift

Input Bias Current

Input Offset Current

See

μV/°C

max

I_B

nA max

I_OS

0.2

0.3

nA max

(1) Typical values in standard typeface are for TJ = 25°C; values in boldface type apply for the full operating temperature range. These

values represent the most likely parametric norm.

(2) All limits are ensured at room temperature (standard type face) or at operating temperature extremes (bold type face).

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Electrical Characteristics (continued)

These specifications apply for V⁻= GND = 0V, V⁺= 5V, V_CM= V_OUT= 2.5V, I_R= 100μA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T_J= 25°C; limits in Boldface type apply over the Operating

Temperature Range.

Symbol

Parameter

Conditions

Typ⁽¹⁾

LM614I

LM614C

Limits⁽²⁾

Units

I_OS1

ΔT

Average Offset

Drift Current

pA/°C

R_IN

Input Resistance

Differential

1800

3800

5.7

MΩ

Common-Mode

C_IN

e_n

I_n

Input Capacitance

Voltage Noise

Current Noise

Common-Mode

Rejection Ratio

Power Supply

Rejection Ratio

Common-Mode Input

f = 100 Hz, Input Referred

V ⁺= 30V, 0V ≤ V_CM≤ (V⁺− 1.8V),

nV/√Hz

fA/√Hz

dB min

CMRR

CMRR = 20 log (ΔV_CM/ΔV_OS

4V ≤ V⁺≤ 30V, V_CM= V⁺/2,

PSRR = 20 log (ΔV⁺/ΔV_OS

)

PSRR

110

100

)

A _V

Open Loop

Voltage Gain

R _L= 10 kΩ to GND, V⁺= 30V,

5V ≤ V_OUT≤ 25V

500

V/mV

min

Slew Rate

V ⁺= 30V⁽³⁾

±0.70

±0.65

±0.50

±0.45

V/μs

GBW

V_O1

Gain Bandwidth

C _L= 50 pF

0.8

0.52

MHz

Output Voltage

Swing High

R _L= 10 kΩ to GND

V ⁺− 1.4

V ⁺− 1.8

V⁺− 1.9

V min

V ⁺= 36V (32V for LM614C)

V⁺− 1.6

V_O2

Output Voltage

Swing Low

R _L= 10 kΩ to V⁺

V ⁻+ 0.8

V ⁻+ 0.95

V max

V ⁺= 36V (32V for LM614C)

V⁻+ 0.9

V⁻+ 1.0

I_OUT

I _SINK

I_SHORT

Output Source

V _OUT= 2.5V, V_+IN= 0V,

mA min

_−IN= −0.3V

V _OUT= 1.6V, V_+IN= 0V,

_−IN= 0.3V

V _OUT= 0V, V_+IN= 3V,

_−IN= 2V, Source

V _OUT= 5V, V_+IN= 2V,

Output Sink

Current

mA min

Short Circuit Current

mA max

_−IN= 3V, Sink

VOLTAGE REFERENCE

(4)

V_R

Voltage Reference

See

1.244

1.2191

1.2689

(±2.0%)

V min

V max

(5)

(6)

ΔV_R

ΔT

Average Temperature Drift

Hysteresis

See

150

PPM/°C

max

ΔV_R

ΔT_J

3.2

μV/°C

V _RChange

with Current

_{R(100 μA)}− V_{R(17 μA)}

0.05

0.1

1.1

mV max

ΔV_R

ΔI_R

(7)

_{R(10 mA)}− V_{R(100 μA)}

1.5

2.0

5.5

mV max

(3) Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V,

and the output voltage transition is sampled at 10V and @20V. For falling slew rate, the input voltage is driven from 25V to 5V, and the

output voltage transition is sampled at 20V and 10V.

(4) V_Ris the Cathode-feedback voltage, nominally 1.244V.

(5) Average reference drift is calculated from the measurement of the reference voltage at 25°C and at the temperature extremes. The drift,

in ppm/°C, is 10⁶•ΔV _R/(V_R[25°C]•ΔT_J), where ΔV _Ris the lowest value subtracted from the highest, V_R[25°C]is the value at 25°C, and ΔT_J

is the temperature range. This parameter is ensured by design and sample testing.

(6) Hysteresis is the change in V_Rcaused by a change in T_J, after the reference has been “dehysterized”. To dehysterize the reference; that

is minimize the hysteresis to the typical value, cycle its junction temperature in the following pattern, spiraling in toward 25°C: 25°C,

85°C, −40°C, 70°C, 0°C, 25°C.

(7) Low contact resistance is required for accurate measurement.

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Electrical Characteristics (continued)

These specifications apply for V⁻= GND = 0V, V⁺= 5V, V_CM= V_OUT= 2.5V, I_R= 100μA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T_J= 25°C; limits in Boldface type apply over the Operating

Temperature Range.

Symbol

Parameter

Conditions

Typ⁽¹⁾

LM614I

LM614C

Limits⁽²⁾

Units

Resistance

ΔV _{R(10→0.1 mA)}/9.9 mA

ΔV _{R(100→17 μA)}/83 μA

_{R(Vro = Vr)}− V_{R(Vro = 5.0V)}

(3.76V between Anode and FEEDBACK)

_{R(V + = 5V)}− V_{R(V + = 36V)}

(V⁺= 32V for LM614C)

0.2

0.6

0.56

Ω max

ΔV_R

AV_RO

V _RChange

with High V_RO

2.5

2.8

mV max

V _RChange with

V⁺Change

0.1

1.2

1.3

mV max

ΔV_R

ΔV+

V_{R(V + = 5V)}− V_{R(V + = 3V)}

0.01

1.5

mV max

I_FB

e_n

FEEDBACK Bias Current

Voltage Noise

_ANODE≤ V_FB≤ 5.06V

nA max

BW = 10 Hz to 10 kHz, V_RO= V_R

μV _RMS

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SNOSC21C –MAY 1998–REVISED MARCH 2013

Typical Performance Characteristics (Reference)

T_J= 25°C, FEEDBACK pin shorted to V⁻= 0V, unless otherwise noted

Reference Voltage vs Temperature

on 5 Representative Units

Reference Voltage Drift

Figure 1.

Figure 2.

Accelerated Reference Voltage Drift vs. Time

Reference Voltage vs. Current and Temperature

Figure 3.

Figure 4.

Reference Voltage vs. Current and Temperature

Reference Voltage vs. Reference Current

Figure 5.

Figure 6.

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Typical Performance Characteristics (Reference) (continued)

T_J= 25°C, FEEDBACK pin shorted to V⁻= 0V, unless otherwise noted

Reference Voltage vs. Reference Current

Reference AC Stability Range

Figure 7.

Figure 8.

FEEDBACK Current vs. FEEDBACK-to-Anode Voltage

Figure 9.

Figure 10.

Reference Noise Voltage vs. Frequency

Reference Small-Signal Resistance vs. Frequency

Figure 11.

Figure 12.

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Typical Performance Characteristics (Reference) (continued)

T_J= 25°C, FEEDBACK pin shorted to V⁻= 0V, unless otherwise noted

Reference Power-Up Time

Reference Voltage with FEEDBACK Voltage Step

Figure 13.

Figure 14.

Reference Voltage with 100∼12 μA Current Step

Reference Step Response for 100 μA ∼ 10 mA Current Step

Figure 15.

Figure 16.

Reference Voltage Change with Supply Voltage Step

Figure 17.

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Typical Performance Characteristics (Op Amps)

V⁺= 5V, V⁻= GND = 0V, V_CM= V⁺/2, V_OUT= V⁺/2, T_J= 25°C, unless otherwise noted

Input Common-Mode Voltage Range vs. Temperature

V_OSvs. Junction Temperature on 9 Representative Units

Figure 18.

Figure 19.

Input Bias Current vs. Common-Mode Voltage

Slew Rate vs. Temperature and Output Sink Current

Figure 20.

Figure 21.

Large-Signal Step Response

Output Voltage Swing vs. Temp. and Current

Figure 22.

Figure 23.

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Typical Performance Characteristics (Op Amps) (continued)

V⁺= 5V, V⁻= GND = 0V, V_CM= V⁺/2, V_OUT= V⁺/2, T_J= 25°C, unless otherwise noted

Output Source Current vs. Output Voltage and Temp.

Output Sink Current vs. Output Voltage and Temp.

Figure 24.

Figure 25.

Output Swing, Large Signal

Output Impedance vs. Frequency and Gain

Figure 26.

Figure 27.

Small-Signal Pulse Response vs. Temp.

Small-Signal Pulse Response vs. Load

Figure 28.

Figure 29.

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Typical Performance Characteristics (Op Amps) (continued)

V⁺= 5V, V⁻= GND = 0V, V_CM= V⁺/2, V_OUT= V⁺/2, T_J= 25°C, unless otherwise noted

Op Amp Voltage Noise vs. Frequency

Op Amp Current Noise vs. Frequency

Figure 30.

Figure 31.

Small-Signal Voltage Gain vs. Frequency and Temperature

Small-Signal Voltage Gain vs. Frequency and Load

Figure 32.

Figure 33.

Follower Small-Signal Frequency Response

Common-Mode Input Voltage Rejection Ratio

Figure 34.

Figure 35.

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Typical Performance Characteristics (Op Amps) (continued)

V⁺= 5V, V⁻= GND = 0V, V_CM= V⁺/2, V_OUT= V⁺/2, T_J= 25°C, unless otherwise noted

Power Supply Current vs. Power Supply Voltage

Positive Power Supply Voltage Rejection Ratio

Figure 36.

Figure 37.

Negative Power Supply Voltage Rejection Ratio

Input Offset Current vs. Junction Temperature

Figure 38.

Figure 39.

Input Bias Current vs. Junction Temperature

Figure 40.

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Typical Performance Distributions

Average V_OSDrift Industrial Temperature Range

Average V_OSDrift Commercial Temperature Range

Figure 41.

Figure 42.

Average I_OSDrift Industrial Temperature Range

Average I_OSDrift Commercial Temperature Range

Figure 43.

Figure 44.

Voltage Reference Broad-BandNoise Distribution

Op Amp Voltage Noise Distribution

Figure 45.

Figure 46.

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Typical Performance Distributions (continued)

Op Amp Current Noise Distribution

Figure 47.

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APPLICATION INFORMATION

VOLTAGE REFERENCE

Reference Biasing

The voltage reference is of a shunt regulator topology that models as a simple zener diode. With current I_r

flowing in the “forward” direction there is the familiar diode transfer function. I_rflowing in the reverse direction

forces the reference voltage to be developed from cathode to anode. The cathode may swing from a diode drop

below V⁻to the reference voltage or to the avalanche voltage of the parallel protection diode, nominally 7V. A

5.0V reference with V⁺= 3V is allowed.

Figure 48. Voltages Associated with Reference

(Current Source I_ris External)

The reference equivalent circuit reveals how V_ris held at the constant 1.2V by feedback, and how the

FEEDBACK pin passes little current.

To generate the required reverse current, typically a resistor is connected from a supply voltage higher than the

reference voltage. Varying that voltage, and so varying I_r, has small effect with the equivalent series resistance of

less than an ohm at the higher currents. Alternatively, an active current source, such as the LM134 series, may

generate I_r.

Figure 49. Reference Equivalent Circuit

Figure 50. 1.2V Reference

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Capacitors in parallel with the reference are allowed. See Reference AC Stability Range typical curve for

capacitance values—from 20 μA to 3 mA any capacitor value is stable. With the reference's wide stability range

with resistive and capacitive loads, a wide range of RC filter values will perform noise filtering.

Adjustable Reference

The FEEDBACK pin allows the reference output voltage, V_ro, to vary from 1.24V to 5.0V. The reference attempts

to hold V_rat 1.24V. If V_ris above 1.24V, the reference will conduct current from Cathode to Anode; FEEDBACK

current always remains low. If FEEDBACK is connected to Anode, then V_ro= V_r= 1.24V. For higher voltages

FEEDBACK is held at a constant voltage above Anode—say 3.76V for V_ro= 5V. Connecting a resistor across the

constant V_rgenerates a current I=V_r/R1 flowing from Cathode into FEEDBACK node. A Thevenin equivalent

3.76V is generated from FEEDBACK to Anode with R2=3.76/I. For a 1% error, use R1 such that I is greater than

one hundred times the FEEDBACK bias current. For example, keep I ≥ 5.5μA.

Figure 51. Thevenin Equivalent

of Reference with 5V Output

R1 = Vr/I = 1.24/32μ = 39k

R2 = R1 {(Vro/Vr) − 1} = 39k {(5/1.24) − 1)} = 118k

Figure 52. Resistors R1 and R2 Program

Reference Output Voltage to be 5V

Understanding that V_ris fixed and that voltage sources, resistors, and capacitors may be tied to the FEEDBACK

pin, a range of V_rtemperature coefficients may be synthesized.

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Figure 53. Output Voltage has Negative Temperature

Coefficient (TC) if R2 has Negative TC

Figure 54. Output Voltage has Positive TC

if R1 has Negative TC

Figure 55. Diode in Series with R1 Causes Voltage

across R1 and R2 to be Proportional to

Absolute Temperature (PTAT)

Connecting a resistor across Cathode-to-FEEDBACK creates a 0 TC current source, but a range of TCs may be

synthesized.

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I = Vr/R1 = 1.24/R1

Figure 56. Current Source is Programmed by R1

Figure 57. Proportional-to-Absolute-Temperature

Current Source

Figure 58. Negative-TC Current Source

Hysteresis

The reference voltage depends, slightly, on the thermal history of the die. Competitive micro-power products

vary—always check the data sheet for any given device. Do not assume that no specification means no

hysteresis.

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OPERATIONAL AMPLIFIERS

Any amp or the reference may be biased in any way with no effect on the other amps or reference, except when

a substrate diode conducts (see Electrical Characteristics). One amp input may be outside the common-mode

range, another amp may be operated as a comparator, another with all terminals floating with no effect on the

others (tying inverting input to output and non-inverting input to V⁻on unused amps is preferred). Choosing

operating points that cause oscillation, such as driving too large a capacitive load, is best avoided.

Op Amp Output Stage

These op amps, like their LM124 series, have flexible and relatively wide-swing output stages. There are simple

rules to optimize output swing, reduce cross-over distortion, and optimize capacitive drive capability:

1. Output Swing: Unloaded, the 42μA pull-down will bring the output within 300 mV of V⁻over the military

temperature range. If more than 42μA is required, a resistor from output to V⁻will help. Swing across any

load may be improved slightly if the load can be tied to V⁺, at the cost of poorer sinking open-loop voltage

gain

2. Cross-over Distortion: The LM614 has lower cross-over distortion (a 1 V_BEdeadband versus 3 V_BEfor the

LM124), and increased slew rate as shown in the characteristic curves. A resistor pull-up or pull-down will

force class-A operation with only the PNP or NPN output transistor conducting, eliminating cross-over

distortion

3. Capacitive Drive: Limited by the output pole caused by the output resistance driving capacitive loads, a pull-

down resistor conducting 1 mA or more reduces the output stage NPN r_euntil the output resistance is that of

the current limit 25Ω. 200pF may then be driven without oscillation.

Op Amp Input Stage

The lateral PNP input transistors, unlike most op amps, have BV_EBOequal to the absolute maximum supply

voltage. Also, they have no diode clamps to the positive supply nor across the inputs. These features make the

inputs look like high impedances to input sources producing large differential and common-mode voltages.

Typical Applications

Figure 59. Simple Low Quiescent Drain Voltage Regulator.

Total supply current approximately 320μA, when V_IN= +5V.

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*10k must be low

t.c. trimpot.

Figure 60. Ultra Low Noise 10.00V Reference.

Total output noise is typically 14μV_RMS

V_OUT= (R₁/Pe + 1) V _REF

R₁, R₂should be 1% metal film

P_βshould be low T.C. trim pot

Figure 61. Slow Rise Time Upon Power-Up, Adjustable Transducer Bridge Driver.

Rise time is approximately 1ms.

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(1) Set zero code voltage, then adjust 10Ω gain adjust pot for full scale.

Figure 62. Transducer Data Acquisition System.

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Simplified Schematic Diagrams

Figure 63. Op Amp

Figure 64. Reference / Bias

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REVISION HISTORY

Changes from Revision B (March 2013) to Revision C

Page

•

Changed layout of National Data Sheet to TI format .......................................................................................................... 21

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PACKAGE OPTION ADDENDUM

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10-Dec-2020

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

LM614 MDC

ACTIVE

DIESALE

100

RoHS & Green

Call TI

Level-1-NA-UNLIM

-40 to 85

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 1

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LM614-MIL [TI]

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