LM78S40CN/NOPB [TI]

1.5A 可调节升压、降压或反向稳压器 | NFG | 16 | 0 to 70;
LM78S40CN/NOPB
型号: LM78S40CN/NOPB
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

1.5A 可调节升压、降压或反向稳压器 | NFG | 16 | 0 to 70

开关 光电二极管 稳压器
文件: 总14页 (文件大小:435K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LM78S40  
LM78S40 Universal Switching Regulator Subsystem  
Literature Number: SNVS021  
April 1998  
LM78S40  
Universal Switching Regulator Subsystem  
General Description  
Features  
n Step-up, step-down or inverting switching regulators  
n Output adjustable from 1.25V to 40V  
n Peak currents to 1.5A without external transistors  
n Operation from 2.5V to 40V input  
The LM78S40 is a monolithic regulator subsystem consisting  
of all the active building blocks necessary for switching regu-  
lator systems. The device consists of a temperature com-  
pensated voltage reference, a duty-cycle controllable oscilla-  
tor with an active current limit circuit, an error amplifier, high  
current, high voltage output switch, a power diode and an  
uncommitted operational amplifier. The device can drive ex-  
ternal NPN or PNP transistors when currents in excess of  
1.5A or voltages in excess of 40V are required. The device  
can be used for step-down, step-up or inverting switching  
regulators as well as for series pass regulators. It features  
wide supply voltage range, low standby power dissipation,  
high efficiency and low drift. It is useful for any stand-alone,  
low part count switching system and works extremely well in  
battery operated systems.  
n Low standby current drain  
n 80 dB line and load regulation  
n High gain, high current, independent op amp  
n Pulse width modulation with no double pulsing  
Block and Connection Diagrams  
DS010057-2  
16-Lead DIP  
DS010057-1  
Top View  
© 1998 National Semiconductor Corporation  
DS010057  
www.national.com  
Ordering Information  
Part Number  
LM78S40J/883  
LM78S40N  
NS Package  
Temperature Range  
−55˚C to +125˚C  
−40˚C to +125˚C  
0˚C to +70˚C  
J16A Ceramic DIP  
N16E Molded DIP  
N16E Molded DIP  
LM78S40CN  
www.national.com  
2
Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
to GND  
40V  
Common Mode Input Range  
(Comparator and Op Amp)  
Differential Input Voltage  
(Note 4)  
−0.3 to V+  
±
30V  
Storage Temperature Range  
Output Short Circuit  
Duration (Op Amp)  
Ceramic DIP  
−65˚C to +175˚C  
−65˚C to +150˚C  
Continuous  
10 mA  
Molded DIP  
Current from VREF  
Operating Temperature Range  
Extended (LM78S40J)  
Industrial (LM78S40N)  
Commercial (LM78S40CN)  
Lead Temperature  
Voltage from Switch  
Collectors to GND  
−55˚C to +125˚C  
−40˚C to +125˚C  
0˚C to +70˚C  
40V  
40V  
Voltage from Switch  
Emitters to GND  
Voltage from Switch  
Collectors to Emitter  
Voltage from Power Diode to GND  
Reverse Power Diode Voltage  
Current through Power Switch  
Current through Power Diode  
ESD Susceptibility  
Ceramic DIP (Soldering, 60 sec.)  
Molded DIP (Soldering, 10 sec.)  
300˚C  
265˚C  
40V  
40V  
Internal Power Dissipation (Note 2) (Note 3)  
16L-Ceramic DIP  
40V  
1.5A  
1.50W  
1.04W  
40V  
16L-Molded DIP  
1.5A  
Input Voltage from VIN to GND  
Input Voltage from V+ (Op Amp)  
(to be determined)  
LM78S40  
Electrical Characteristics (Note 5)  
+
=
=
=
TA Operating temperature range, VIN 5.0V, V (Op Amp) 5.0V, unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
GENERAL CHARACTERISTICS  
=
ICC  
Supply Current  
VIN 5.0V  
1.8  
2.3  
3.5  
5.0  
4.0  
5.5  
mA  
mA  
mA  
mA  
=
VIN 40V  
(Op Amp Disconnected)  
Supply Current  
=
VIN 5.0V  
ICC  
=
(Op Amp Connected)  
VIN 40V  
REFERENCE SECTION  
=
<
<
VREF  
Reference Voltage  
IREF 1.0 mA Extend −55˚C TA  
+125˚C,  
<
<
Comm 0 TA +70˚C,  
1.180  
1.245  
0.04  
0.2  
1.310  
0.2  
V
<
<
Indus −40˚C TA +85˚C  
=
=
VR LINE  
Reference Voltage  
Line Regulation  
VIN 3.0V to VIN 40V,  
mV/V  
mV/mA  
=
=
IREF 1.0 mA, TA 25˚C  
=
=
VR LOAD Reference Voltage  
Load Regulation  
IREF 1.0 mA to IREF 10 mA,  
0.5  
=
TA 25˚C  
OSCILLATOR SECTION  
=
=
ICHG  
Charging Current  
Charging Current  
Discharge Current  
Discharge Current  
Oscillator Voltage Swing  
Ratio of Charge/  
VIN 5.0V, TA 25˚C  
20  
20  
50  
70  
µA  
µA  
= =  
VIN 40V, TA 25˚C  
ICHG  
=
=
IDISCHG  
IDISCHG  
VOSC  
VIN 5.0V, TA 25˚C  
150  
150  
250  
350  
µA  
=
=
VIN 40V, TA 25˚C  
µA  
=
=
VIN 5.0V, TA 25˚C  
0.5  
6.0  
V
t
on/toff  
µs/µs  
Discharge Time  
CURRENT LIMIT SECTION  
=
VCLS  
Current Limit Sense  
Voltage  
TA 25˚C  
250  
350  
mV  
OUTPUT SWITCH SECTION  
VSAT 1 Output Saturation Voltage 1 ISW 1.0A (Figure 1)  
VSAT 2  
=
1.1  
1.3  
0.7  
V
V
=
Output Saturation Voltage 2 ISW 1.0A (Figure 2)  
0.45  
3
www.national.com  
LM78S40  
Electrical Characteristics (Note 5) (Continued)  
+
=
=
=
TA Operating temperature range, VIN 5.0V, V (Op Amp) 5.0V, unless otherwise specified.  
Symbol  
OUTPUT SWITCH SECTION  
hFE Output Transistor Current  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
=
=
=
IC 1.0A, VCE 5.0V, TA 25˚C  
70  
10  
Gain  
=
=
IL  
Output Leakage Current  
VO 40V, TA 25˚C  
nA  
POWER DIODE  
=
VFD  
IDR  
Forward Voltage Drop  
Diode Leakage Current  
ID 1.0A  
1.25  
10  
1.5  
V
=
=
VD 40V, TA 25˚C  
nA  
COMPARATOR  
=
VIO  
IIB  
Input Offset Voltage  
VCM VREF  
1.5  
35  
15  
200  
75  
mV  
nA  
nA  
V
=
VCM VREF  
Input Bias Current  
Input Offset Current  
=
IIO  
VCM VREF  
5.0  
=
VCM  
Common Mode Voltage  
Range  
TA 25˚C  
0
VIN–2  
=
=
PSRR  
Power Supply Rejection  
Ratio  
VIN 3.0V to 40V, TA 25˚C  
70  
96  
dB  
OPERATIONAL AMPLIFIER  
=
VIO  
IIB  
Input Offset Voltage  
Input Bias Current  
Input Offset Current  
Voltage Gain+  
VCM 2.5V  
4.0  
30  
15  
200  
75  
mV  
nA  
=
VCM 2.5V  
=
IIO  
VCM 2.5V  
5.0  
250  
nA  
+
=
AVS  
RL 2.0 kto GND;  
25  
25  
0
V/mV  
=
=
VO 1.0V to 2.5V, TA 25˚C  
+
Voltage Gain−  
RL 2.0 kto V (Op Amp)  
250  
V/mV  
V
=
AVS  
=
=
VO 1.0V to 2.5V, TA 25˚C  
=
VCM  
Common Mode Voltage  
Range  
TA 25˚C  
VCC − 2  
=
=
CMR  
Common Mode Rejection  
VCM 0V to 3.0V, TA 25˚C  
V+ (Op Amp) 3.0V to 40V, TA 25˚C  
= =  
76  
76  
100  
100  
dB  
dB  
PSRR  
Power Supply Rejection  
Ratio  
+
=
IO  
Output Source Current  
Output Sink Current  
Slew Rate  
TA 25˚C  
75  
10  
150  
35  
mA  
mA  
V/µs  
V
=
TA 25˚C  
IO  
=
SR  
TA 25˚C  
0.6  
=
=
VOL  
VOH  
Output Voltage LOW  
Output Voltage High  
IL −5.0 mA, TA 25˚C  
1.0  
=
=
IL 50 mA, TA 25˚C  
V + (Op  
V
Amp) −  
3V  
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when ordering the device  
beyond its rated operating conditions.  
=
150˚C for the Molded DIP, and 175˚C for the Ceramic DIP.  
Note 2:  
T
J
Max  
Note 3: Ratings apply to ambient temperature at 25˚C. Above this temperature, derate the 16L-Ceramic DIP at 10 mW/˚C, and the 16L-Molded DIP at 8.3 mW/˚C.  
Note 4: For supply voltages less than 30V, the absolute maximum voltage is equal to the supply voltage.  
Note 5: A military RETS specification is available on request. At the time of printing, the LM78S40 RETS specification complied with the Min and Max limits in this  
table. The LM78S40J may also be procured as a Standard Military Drawing.  
www.national.com  
4
Typical Performance Characteristics  
CT vs OFF Time  
Reference Voltage vs  
Junction Temperature  
DS010057-6  
DS010057-7  
Discharge Current vs  
Input Voltage  
Current Limit Sense  
Voltage vs Input Voltage  
DS010057-8  
DS010057-9  
Design Formulas  
Characteristic  
Step-Down  
Step-Up  
Inverting  
Units  
(ton + toff) Max  
µs  
µF  
A
CT  
Ipk  
4 x 10−5 ton  
2 IO Max  
4 x 10−5 ton  
4 x 10−5 ton  
LMin  
µH  
RSC  
CO  
0.33/Ipk  
0.33/Ipk  
0.33/Ipk  
µF  
=
Note 6:  
V
Saturation voltage of the switching element.  
SAT  
=
V
Forward voltage of the flyback diode.  
D
5
www.national.com  
Functional Description  
Typical Applications  
SWITCHING FREQUENCY CONTROL  
The LM78S40 is a variable frequency, variable duty cycle  
device. The initial switching frequency is set by the timing  
capacitor. (Oscillator frequency is set by a single external  
capacitor and may be varied over a range of 100 Hz to  
100 kHz). The initial duty cycle is 6:1. This switching fre-  
quency and duty cycle can be modified by two  
mechanisms — the current limit circuitry (Ipk sense) and the  
comparator.  
The comparator modifies the OFF time. When the output  
voltage is correct, the comparator output is in the HIGH  
state and has no effect on the circuit operation. If the out-  
put voltage is too high then the comparator output goes  
LOW. In the LOW state the comparator inhibits the turn-on  
of the output stage switching transistors. As long as the  
comparator is LOW the system is in OFF time. As the out-  
put current rises the OFF time decreases. As the output  
current nears its maximum the OFF time approaches its  
minimum value. The comparator can inhibit several ON  
cycles, one ON cycle or any portion of an ON cycle. Once  
the ON cycle has begun the comparator cannot inhibit un-  
til the beginning of the next ON cycle.  
The current limit modifies the ON time. The current limit is  
activated when a 300 mV potential appears between lead  
13 (VCC) and lead 14 (Ipk). This potential is intended to re-  
sult when designed for peak current flows through RSC  
.
When the peak current is reached the current limit is  
turned on. The current limit circuitry provides for a quick  
end to ON time and the immediate start of OFF time.  
Generally the oscillator is free running but the current limit  
action tends to reset the timing cycle.  
Increasing load results in more current limited ON time  
and less OFF time. The switching frequency increases  
with load current.  
DS010057-3  
FIGURE 1. Typical Step-Down Regulator and  
=
Operational Performance (TA 25˚C)  
USING THE INTERNAL REFERENCE, DIODE, AND  
SWITCH  
Characteristic Condition  
Typical  
Value  
10V  
The internal 1.245V reference (pin 8) must be bypassed,  
with 0.1 µF directly to the ground pin (pin 11) of the  
LM78S40, to assure its stability.  
=
Output Voltage  
Line Regulation  
Load Regulation  
IO 200 mA  
20V VI 30V  
5.0 mA IO  
1.5 mV  
3.0 mV  
VFD is the forward voltage drop across the internal power  
diode. It is listed on the data sheet as 1.25V typical, 1.5V  
maximum. If an external diode is used, then its own for-  
IO 300 mA  
=
Max Output Current  
Output Ripple  
Efficiency  
VO 9.5V  
500 mA  
50 mV  
74%  
ward voltage drop must be used for VFD  
.
=
VSAT is the voltage across the switch element (output tran-  
sistors Q1 and Q2) when the switch is closed or ON. This  
is listed on the data sheet as Output Saturation Voltage.  
IO 200 mA  
=
IO 200 mA  
=
Standby Current  
IO 200 mA  
2.8 mA  
“Output saturation voltage 1” is defined as the switching  
element voltage for Q2 and Q1 in the Darlington configu-  
ration with collectors tied together. This applies to Figure  
1, the step down mode.  
Note 7: For  
I
O
200 mA use external diode to limit on-chip power  
dissipation.  
“Output saturation voltage 2” is the switching element volt-  
age for Q1 only when used as a transistor switch. This ap-  
plies to Figure 2, the step up mode.  
For the inverting mode, Figure 3, the saturation voltage of  
the external transistor should be used for VSAT  
.
www.national.com  
6
Typical Applications (Continued)  
DS010057-4  
DS010057-5  
FIGURE 2. Typical Step-Up Regulator and  
FIGURE 3. Typical Inverting Regulator and  
=
Operational Performance (TA 25˚C)  
=
Operational Performance (TA 25˚C)  
Characteristic Condition  
Typical  
Value  
25V  
Characteristic Condition  
Typical  
Value  
=
Output Voltage  
Line Regulation  
Load Regulation  
IO 50 mA  
=
Output Voltage  
Line Regulation  
Load Regulation  
IO 100 mA  
8.0V VI 18V  
5.0 mA IO  
−15V  
5.0V VI 15V  
5.0 mA IO  
IO 100 mA  
4.0 mV  
2.0 mV  
5.0 mV  
3.0 mV  
IO 150 mA  
=
Max Output Current  
Output Ripple  
Efficiency  
VO 23.75V  
160 mA  
30 mV  
79%  
=
Max Output Current  
Output Ripple  
Efficiency  
VO 14.25V  
160 mA  
20 mV  
70%  
=
IO 50 mA  
=
IO 100 mA  
=
IO 50 mA  
=
IO 100 mA  
=
Standby Current  
IO 50 mA  
2.6 mA  
=
Standby Current  
IO 100 mA  
2.3 mA  
7
www.national.com  
Typical Applications (Continued)  
DS010057-10  
=
FIGURE 4. Pulse Width Modulated Step-Down Regulator (fOSC 20 kHz)  
www.national.com  
8
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with instructions for use provided in the labeling, can  
be reasonably expected to result in a significant injury  
to the user.  
2. A critical component in any component of a life support  
device or system whose failure to perform can be rea-  
sonably expected to cause the failure of the life support  
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National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.  
PACKAGE OPTION ADDENDUM  
www.ti.com  
7-Jun-2022  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
LM78S40CN/NOPB  
ACTIVE  
PDIP  
NFG  
16  
25  
RoHS &  
Non-Green  
SN  
Level-1-NA-UNLIM  
0 to 70  
LM78S40CN  
Samples  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
8-Jun-2022  
TUBE  
T - Tube  
height  
L - Tube length  
W - Tube  
width  
B - Alignment groove width  
*All dimensions are nominal  
Device  
Package Name Package Type  
NFG PDIP  
Pins  
SPQ  
L (mm)  
W (mm)  
T (µm)  
B (mm)  
LM78S40CN/NOPB  
16  
25  
502  
14  
11938  
4.32  
Pack Materials-Page 1  
MECHANICAL DATA  
NFG0016E  
N16E (Rev G)  
www.ti.com  
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