LM8272MMX/NOPB [TI]

Dual, 24-V, 13-MHz operational amplifier | DGK | 8 | -40 to 85;
LM8272MMX/NOPB
型号: LM8272MMX/NOPB
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

Dual, 24-V, 13-MHz operational amplifier | DGK | 8 | -40 to 85

放大器 光电二极管
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LM8272  
SNOS515F OCTOBER 2000REVISED AUGUST 2015  
LM8272 Dual RRIO, High Output Current & Unlimited Cap Load  
Op Amp in Miniature Package  
1 Features  
3 Description  
The LM8272 is a Rail-to-Rail input and output Op  
Amp which can operate with a wide supply voltage  
range. This device has high output current drive,  
greater than Rail-to-Rail input common mode voltage  
range, and unlimited capacitive load drive capability,  
while requiring only 0.95mA/channel supply current. It  
is specifically designed to handle the requirements of  
flat panel TFT panel VCOM driver applications as well  
as being suitable for other low power and medium  
speed applications which require ease of use and  
enhanced performance over existing devices.  
1
(VS = 12V, TA = 25°C, Typical values unless  
specified).  
GBWP 15MHz  
Wide supply voltage range 2.5 V to 24 V  
Slew rate 15 V/µs  
Supply current/channel 0.95 mA  
Cap load tolerance Unlimited  
Output short circuit current ±13 0mA  
Output current (1 V from rails) ±65 mA  
Input common mode voltage 0.3 V beyond rails  
Input voltage noise 15 nV/Hz  
Input current noise 1.4 pA/Hz  
Greater than Rail-to-Rail input common mode voltage  
range with 50 dB of Common Mode Rejection allows  
high side and low side sensing among many  
applications without concerns for exceeding the range  
and with no compromise in accuracy. An  
exceptionally wide operating supply voltage range of  
2 Applications  
2.5  
V to 24 V removes any concerns over  
TFT-LCD flat panel VCOM driver  
A/D converter buffer  
functionality under extreme conditions and offers  
flexibility of use in multitude of applications. In  
addition, most device parameters are insensitive to  
power supply variations. This design enhancement is  
yet another step in simplifying its usage.  
High side/low side sensing  
Headphone amplifier  
The LM8272 is offered in the 8-pin VSSOP package.  
Device Information(1)  
PART NUMBER  
LM8272  
PACKAGE  
BODY SIZE (NOM)  
VSSOP (8)  
3.00 mm × 3.00 mm  
(1) For all available packages, see the orderable addendum at  
the end of the datasheet.  
Large Signal Step Response  
for Various Cap. Load  
Simplified Schematic  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
LM8272  
SNOS515F OCTOBER 2000REVISED AUGUST 2015  
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Table of Contents  
A) Input Stage:......................................................... 14  
1
2
3
4
5
6
Features.................................................................. 1  
Applications ........................................................... 1  
Description ............................................................. 1  
Revision History..................................................... 2  
Pin Configuration and Functions......................... 3  
Specifications......................................................... 4  
6.1 Absolute Maximum Ratings ...................................... 4  
6.2 ESD Ratings.............................................................. 4  
6.3 Recommended Operating Conditions....................... 4  
6.4 Thermal Information.................................................. 4  
6.5 5V Electrical Characteristics ..................................... 5  
6.6 12V Electrical Characteristics ................................... 6  
6.7 Typical Performance Characteristics ........................ 8  
Application and Implementation ........................ 14  
7.1 Block Diagram and Operational Description  
7.2 B) Output Stage: ..................................................... 15  
7.3 C) Output Voltage Swing Close to V:.................... 15  
7.4 Driving Capactive Loads: ........................................ 16  
7.5 Estimating the Output Voltage Swing ..................... 16  
7.6 Output Short Circuit Current and Dissipation  
Issues:...................................................................... 17  
7.7 Other Application Hints: .......................................... 18  
7.8 LM8272 Advantages: .............................................. 18  
Device and Documentation Support.................. 19  
8.1 Community Resources............................................ 19  
8.2 Trademarks............................................................. 19  
8.3 Electrostatic Discharge Caution.............................. 19  
8.4 Glossary.................................................................. 19  
8
9
7
Mechanical, Packaging, and Orderable  
Information ........................................................... 19  
4 Revision History  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
Changes from Revision E (August 2014) to Revision F  
Page  
Changed pin 5 From: -IN B To: +IN B Non-Inverting Input B in the Pin Functions table....................................................... 3  
Changed pin 6 From: +IN B To: -IN B Inverting Input B in the Pin Functions table............................................................... 3  
Moved "Storage temperature range" to the Absolute Maximum Ratings(1)(2) ........................................................................ 4  
Changed Handling Ratings To: ESD Ratings ........................................................................................................................ 4  
Changes from Revision D (March 2013) to Revision E  
Page  
Changed data sheet structure and organization. Added, updated, or renamed the following sections: Device  
Information Table, Application and Implementation; Power Supply Recommendations; Mechanical, Packaging, and  
Ordering Information. ............................................................................................................................................................. 1  
Deleted TJ = 25°C................................................................................................................................................................... 5  
Deleted TJ = 25°C .................................................................................................................................................................. 6  
Changes from Revision C (March 2013) to Revision D  
Page  
Changed layout of National Data Sheet to TI format ........................................................................................................... 18  
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5 Pin Configuration and Functions  
8-Pin VSSOP  
Top View  
Pin Functions  
PIN  
I/O  
DESCRIPTION  
NUMBER  
NAME  
OUT A  
-IN A  
+IN A  
V-  
1
2
3
4
5
6
7
8
O
I
Output A  
Inverting Input A  
Non-Inverting Input A  
Negative Supply  
Non-Inverting Input B  
Inverting Input B  
Output B  
I
I
+IN B  
-IN B  
OUT B  
V+  
I
I
O
I
Positive Supply  
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6 Specifications  
6.1 Absolute Maximum Ratings(1)(2)  
over operating free-air temperature range (unless otherwise noted)  
MIN  
MAX  
UNIT  
VIN Differential  
+/10  
V
Output Short Circuit Duration  
Supply Voltage (V+ - V)  
Voltage at Input/Output pins  
Junction Temperature(5)  
Storage temperature range, Tstg  
See(3)(4)  
27  
V
V+ +0.3, V0.3  
V
+150  
+150  
235  
°C  
°C  
°C  
°C  
65  
Soldering Information:  
Infrared or Convection (20 sec.)  
Wave Soldering (10 sec.)  
260  
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Rating indicate conditions for  
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test  
conditions, see the Electrical Characteristics.  
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and  
specifications.  
(3) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in  
exceeding the maximum allowed junction temperature of 150°C.  
(4) Output short circuit duration is infinite for VS 6 V at room temperature and below. For VS > 6 V, allowable short circuit duration is 1.5  
ms.  
(5) The maximum power dissipation is a function of TJ(max), RθJA, and TA. The maximum allowable power dissipation at any ambient  
temperature is PD = (TJ(max) - TA)/ RθJA. All numbers apply for packages soldered directly onto a PC board.  
6.2 ESD Ratings  
VALUE  
±2000  
±200  
UNIT  
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(2)  
Machine Model (MM)(3)  
V(ESD)  
Electrostatic discharge(1)  
V
(1) Human body model, 1.5 kΩ in series with 100 pF. Machine Model, 0 Ω is series with 200 pF.  
(2) JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process.  
(3) JEDEC document JEP157 states that 200-V MM allows safe manufacturing with a standard ESD control process.  
6.3 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
2.5  
NOM  
MAX  
24  
UNIT  
V
Supply Voltage (V+ - V)  
Operating Temperature Range(1)  
40  
+85  
°C  
(1) The maximum power dissipation is a function of TJ(max), RθJA, and TA. The maximum allowable power dissipation at any ambient  
temperature is PD = (TJ(max) - TA)/ RθJA. All numbers apply for packages soldered directly onto a PC board.  
6.4 Thermal Information  
DGK  
THERMAL METRIC(1)  
UNIT  
8 Pins  
RθJA  
Junction-to-ambient thermal resistance(2)  
235  
°C/W  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.  
(2) The maximum power dissipation is a function of TJ(max), RθJA, and TA. The maximum allowable power dissipation at any ambient  
temperature is PD = (TJ(max) - TA)/ RθJA. All numbers apply for packages soldered directly onto a PC board.  
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6.5 5V Electrical Characteristics  
Unless otherwise specified, all limited ensured for V+ = 5V, V= 0V, VCM = 0.5V, VO = V+/2, and RL > 1Mto V. Boldface  
limits apply at the temperature extremes.  
PARAMETER  
Input Offset Voltage  
TEST CONDITIONS  
VCM = 0.5V & VCM = 4.5V  
TYP(1)  
+/0.7  
+/2  
LIMIT(2)  
UNIT  
VOS  
+/5  
+/7  
mV  
max  
TC VOS  
IB  
Input Offset Average Drift  
Input Bias Current  
VCM = 0.5V & VCM = 4.5V(3)  
µV/°C  
(4)  
See  
±2.00  
±2.70  
µA  
max  
IOS  
Input Offset Current  
250  
400  
nA  
max  
20  
80  
CMRR  
+PSRR  
CMVR  
Common Mode Rejection Ratio  
Positive Power Supply Rejection Ratio  
Input Common-Mode Voltage Range  
VCM stepped from 0V to 5V  
V+ from 4.5V to 13V  
CMRR > 50dB  
64  
61  
dB  
min  
78  
74  
dB  
min  
100  
0.3  
5.3  
0.1  
0.0  
V
max  
5.1  
5.0  
V
min  
AVOL  
VO  
Large Signal Voltage Gain  
VO = 0.5 to 4.5V,  
64  
60  
dB  
min  
80  
RL = 10kto V+/2  
Output Swing  
High  
RL = 10kto V−  
ISOURCE = 5mA  
RL = 10kto V+  
ISINK = 5mA  
4.93  
4.85  
215  
300  
4.85  
4.70  
250  
350  
V
min  
Output Swing  
Low  
mV  
max  
ISC  
Output Short Circuit Current  
Sourcing to V−  
100  
VID = 200mV(5)  
mA  
mA  
Sinking to V+  
100  
±55  
1.8  
VID = 200mV(5)  
IOUT  
IS  
Output Current  
VID = ±200mV, VO = 1V from rails  
No load, VCM = 0.5V  
Supply Current (Both Channel)  
2.3  
2.8  
mA  
max  
SR  
fu  
Slew Rate(6)  
AV = +1, VI = 5VPP  
VI = 10mVp, RL = 2Kto V+/2  
12  
7.5  
13  
V/µs  
MHz  
Unity Gain Frequency  
Gain-Bandwidth Product  
Phase Margin  
GBWP  
Phim  
en  
f = 50KHz  
MHz  
VI = 10mVp, RL = 2kto V+/2  
f = 2KHz, RS = 50Ω  
f = 2KHz  
55  
deg  
Input-Referred Voltage Noise  
Input-Referred Current Noise  
Full Power Bandwidth  
15  
nV/Hz  
pA/Hz  
kHz  
in  
1.4  
700  
fmax  
ZL = (20pF || 10k) to V+/2  
(1) Typical Values represent the most likely parametric norm.  
(2) All limits are ensured by testing or statistical analysis.  
(3) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.  
(4) Positive current corresponds to current flowing into the device.  
(5) Short circuit test is a momentary test. Output short circuit duration is infinite for VS 6V at room temperature and below. For VS > 6V,  
allowable short circuit duration is 1.5ms.  
(6) Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower.  
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6.6 12V Electrical Characteristics  
Unless otherwise specified, all limited ensured for V+ = 12V, V= 0V, VCM = 6V, VO = 6V, and RL > 1Mto V. Boldface  
limits apply at the temperature extremes.  
PARAMETER  
Input Offset Voltage  
TEST CONDITIONS  
VCM = 0.5V & VCM = 11.5V  
TYP(1)  
+/0.7  
+/2  
LIMIT(2)  
UNIT  
VOS  
+/7  
+/9  
mV  
max  
TC VOS  
IB  
Input Offset Average Drift  
Input Bias Current  
VCM = 0.5V & VCM = 11.5V(3)  
µV/°C  
(4)  
See  
±2.00  
±2.80  
µA  
max  
IOS  
Input Offset Current  
275  
550  
nA  
max  
30  
88  
CMRR  
+PSRR  
Common Mode Rejection Ratio  
Positive Power Supply Rejection Ratio  
VCM stepped from 0V to 12V  
74  
72  
dB  
min  
V+ from 4.5V to 13V, VCM = 0.5V  
78  
74  
dB  
min  
100  
85  
PSRR  
Negative Power Supply Rejection Ratio  
Input Common-Mode Voltage Range  
dB  
CMVR  
CMRR > 50dB  
0.1  
V
max  
0.3  
0
12.1  
12.0  
V
min  
12.3  
83  
AVOL  
VO  
Large Signal Voltage Gain  
VO = 1V to 11V  
74  
70  
dB  
min  
RL = 10kto V+/2  
Output Swing  
High  
RL 10kto V+/2  
ISOURCE = 5mA  
RL = 10kto V+/2  
ISINK = 5mA  
11.8  
11.6  
0.25  
.40  
11.7  
11.5  
0.3  
V
min  
Output Swing  
Low  
V
max  
.45  
ISC  
Output Short Circuit Current  
Sourcing to V−  
VID = 200mV  
130  
110  
(5)  
mA  
min  
Sinking to V+  
VID = 200mV  
130  
±65  
1.9  
110  
(5)  
IOUT  
IS  
Output Current  
VID = ±200mV, VO = 1V from rails  
No load, VCM = 0.5V  
mA  
Supply Current (Both Channel)  
2.4  
2.9  
mA  
max  
SR  
Slew Rate(6)  
AV = +1, VI = 10VPP, CL = 10pF  
AV = +1, VI = 10VPP, CL = 0.1µF  
AV = +1, f = 100KHz  
15  
1
V/µs  
ROUT  
fu  
Close Loop Output Resistance  
Unity Gain Frequency  
Gain-Bandwidth Product  
Phase Margin  
3
VI = 10mVp, RL = 2kto V+/2  
8
MHz  
MHz  
Deg  
dB  
GBWP  
Phim  
GM  
f = 50KHz  
15  
VI = 10mVp, RL = 2kto V+/2  
VI = 10mVp, RL = 2kto V+/2  
AV = +1, RL = 2kto V+/2  
AV = +1, RL = 600to V+/2  
AV = +10, RL = 600to V+/2  
57  
Gain Margin  
20  
3dB BW Small Signal -3db Bandwidth  
12.5  
10.5  
1.0  
MHz  
(1) Typical Values represent the most likely parametric norm.  
(2) All limits are ensured by testing or statistical analysis.  
(3) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.  
(4) Positive current corresponds to current flowing into the device.  
(5) Short circuit test is a momentary test. Output short circuit duration is infinite for VS 6V at room temperature and below. For VS > 6V,  
allowable short circuit duration is 1.5ms.  
(6) Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower.  
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12V Electrical Characteristics (continued)  
Unless otherwise specified, all limited ensured for V+ = 12V, V= 0V, VCM = 6V, VO = 6V, and RL > 1Mto V. Boldface  
limits apply at the temperature extremes.  
PARAMETER  
Input-Referred Voltage Noise  
Input-Referred Current Noise  
Full Power Bandwidth  
TEST CONDITIONS  
f = 2KHz, RS = 50Ω  
TYP(1)  
15  
LIMIT(2)  
UNIT  
nV/Hz  
pA/Hz  
kHz  
en  
in  
f = 2KHz  
ZL = (20pF || 10k) to V+/2  
AV = +2, RL = 2kto V+/2  
VO = 8VPP, VS = ±5V  
1.4  
fmax  
THD+N  
300  
Total Harmonic Distortion +Noise  
0.02%  
68  
CT Rej.  
Cross-Talk Rejection  
f = 5MHz, Driver RL = 10kto V+/2  
dB  
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6.7 Typical Performance Characteristics  
Figure 1. VOS Distribution  
Figure 2. VOS vs. VCM for 3 Representative Units  
Figure 3. VOS vs. VCM for 3 Representative Units  
Figure 4. VOS vs. VCM for 3 Representative Units  
Figure 6. VOS vs. VS for 3 Representative Units  
Figure 5. VOS vs. VS for 3 Representative Units  
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Typical Performance Characteristics (continued)  
Figure 7. VOS vs. VS for 3 Representative Units  
Figure 8. IB vs. VS  
Figure 9. IB vs. VS  
Figure 10. IS vs. VCM  
Figure 12. IS vs. VS  
Figure 11. IS vs. VCM  
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Typical Performance Characteristics (continued)  
Figure 14. CMRR vs. Frequency  
Figure 13. IS vs. VS  
Figure 15. +PSRR vs. Frequency  
Figure 16. PSRR vs. Frequency  
Figure 17. Open Loop Gain/Phase  
for Various Supplies  
Figure 18. Closed Loop Frequency Response  
for Various Gains  
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Typical Performance Characteristics (continued)  
Figure 20. Closed Loop Frequency Response  
for Various RL  
Figure 19. Closed Loop Frequency Response  
for Various Gains  
Figure 21. Maximum Output Swing vs. Load  
(1% Distortion)  
Figure 22. Maximum Output Swing vs. Frequency  
(1% Distortion)  
Figure 23. Closed Loop Small Signal Frequency Response  
for Various CL  
Figure 24. Overshoot vs. Cap Load  
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Typical Performance Characteristics (continued)  
Figure 26. VOUT from V+ vs. ISOURCE  
Figure 25. Settling Time (±1%) & Slew Rate vs. Cap Load  
Figure 27. VOUT from Vvs. ISINK  
Figure 28. Step Response for Various Amplitudes  
Figure 29. Step Response for Various Amplitudes  
Figure 30. Large Signal Step Response  
for Various Cap Loads  
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Typical Performance Characteristics (continued)  
Figure 31. THD+N vs. Input Amplitude  
for Various Frequency  
Figure 32. Input Referred Noise Density  
Figure 34. Crosstalk Rejection vs. Frequency  
Figure 33. Closed Loop Output Impedance vs. Frequency  
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7 Application and Implementation  
7.1 Block Diagram and Operational Description  
A) Input Stage:  
As seen in Figure 35, the input stage consists of two distinct differential pairs (Q1-Q2 and Q3-Q4) in order to  
accommodate the full Rail-to-Rail input common mode voltage range. The voltage drop across R5, R6, R7 and  
R8 is kept to less than 200 mV in order to allow the input to exceed the supply rails. Q13 acts as a switch to  
steer current away from Q3-Q4 and into Q1-Q2, as the input increases beyond 1.4 of V+. This in turn shifts the  
signal path from the bottom stage differential pair to the top one and causes a subsequent increase in the supply  
current.  
In transitioning from one stage to another, certain input stage parameters (VOS, Ib, IOS, en, and in) are determined  
based on which differential pair is “on” at the time. Input Bias current, Ib, will change in value and polarity as the  
input crosses the transition region. In addition, parameter such as PSRR and CMRR which involve the input  
offset voltage will also be effected by changes in VCM across the differential pair transition region.  
Figure 35. Simplified Schematic Diagram  
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Block Diagram and Operational Description  
A) Input Stage: (continued)  
The input stage is protected with the combination of R9-R10 and D1, D2, D3 and D4 against differential input  
over-voltages. This fault condition could otherwise harm the differential pairs or cause offset voltage shift in case  
of prolonged over voltage. As shown in Figure 36, if this voltage reaches approximately ±1.4V at 25°C, the  
diodes turn on and current flow is limited by the internal series resistors (R9 and R10). The Absolute Maximum  
Rating of ±10V differential on VIN still needs to be observed. With temperature variation, the point were the  
diodes turn on will change at the rate of 5mV/°C  
Figure 36. Input Stage Current vs. Differential Input Voltage  
7.2 B) Output Stage:  
The output stage (see Figure 35) is comprised of complimentary NPN and PNP common-emitter stages to permit  
voltage swing to within a Vce(sat) of either supply rail. Q9 supplies the sourcing and Q10 supplies the sinking  
current load. Output current limiting is achieved by limiting the Vce of Q9 and Q10. Using this approach to current  
limiting alleviates the drawback to the conventional scheme which requires one Vbe reduction in output swing.  
The frequency compensation circuit includes Miller capacitors from collector to base of each output transistor  
(see Figure 35, Ccomp9 and Ccomp10). At light capacitive loads, the high frequency gain of the output transistors is  
high, and the Miller effect increases the effective value of the capacitors thereby stabilizing the Op Amp. Large  
capacitive loads greatly decrease the high frequency gain of the output transistors thus lowering the effective  
internal Miller capacitance - the internal pole frequency increases at the same time a low frequency pole is  
created at the Op Amp output due to the large load capacitor. In this fashion, the internal dominant pole  
compensation, which works by reducing the loop gain to less than 0dB when the phase shift around the feedback  
loop is more than 180°, varies with the amount of capacitive load and becomes less dominant when the load  
capacitor has increased enough. Hence the Op Amp is very stable even at high values of load capacitance  
resulting in the uncharacteristic feature of stability under all capacitive loads.  
7.3 C) Output Voltage Swing Close to V:  
The LM8272's output stage design allows voltage swings to within millivolts of either supply rail for maximum  
flexibility and improved useful range. Because of this design architecture, as can be seen from Figure 35  
diagram, with Output approaching either supply rail, either Q9 or Q10 Collector-Base junction reverse bias will  
decrease. With output less than a Vbe from either rail, the corresponding output transistor operates near  
saturation. In this mode of operation, the transistor will exhibit higher junction capacitance and lower ft which will  
reduce Phase Margin. With the Noise Gain (NG = 1 + Rf/Rg, Rf & Rg are external gain setting resistors) of 2 or  
higher, there is sufficient Phase Margin that this reduction (in Phase Margin) is of no consequence. However,  
with lower Noise Gain (<2) and with less than 150mV voltage to the supply rail, if the output loading is light, the  
Phase Margin reduction could result in unwanted oscillations.  
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C) Output Voltage Swing Close to V: (continued)  
In the case of the LM8272, due to inherent architectural specifics, the oscillation occurs only with respect to Q10  
when output swings to within 150mV of V. However, if Q10 collector current is larger than its idle value of a few  
microamps, the Phase Margin loss becomes insignificant. In this case, 300µA is the required Q10 collector  
current to remedy this situation. Therefore, when all the aforementioned critical conditions are present at the  
same time (NG < 2, VOUT < 150mV from supply rails, & output load is light) it is possible to ensure stability by  
adding a load resistor to the output to provide the necessary Q10 minimum Collector Current (300µA).  
For 12V (or ±6V) operation, for example, add a 39kresistor from the output to V+ to cause 300µA output  
sinking current and ensure stability. This is equivalent to about 15% increase in total quiescent power dissipation.  
7.4 Driving Capactive Loads:  
The LM8272 is specifically designed to drive unlimited capacitive loads without oscillations (see Figure 25). In  
addition, the output current handling capability of the device allows for good slewing characteristics even with  
large capacitive loads (Settling Time and Slew Rate vs. Cap Load plot). The combination of these features is  
ideal for applications such as TFT flat panel buffers, A/D converter input amplifiers, etc.  
However, as in most Op Amps, addition of a series isolation resistor between the Op Amp and the capacitive  
load improves the settling and overshoot performance.  
Output current drive is an important parameter when driving capacitive loads. This parameter will determine how  
fast the output voltage can change. Referring to Figure 25, two distinct regions can be identified. Below about  
10,000pF, the output Slew Rate is solely determined by the Op Amp's compensation capacitor value and  
available current into that capacitor. Beyond 10nF, the Slew Rate is determined by the Op Amp's available output  
current. An estimate of positive and negative slew rates for loads larger than 100nF can be made by dividing the  
short circuit current value by the capacitor.  
7.5 Estimating the Output Voltage Swing  
It is important to keep in mind that the steady state output current will be less than the current available when  
there is an input overdrive present. For steady state conditions, Figure 37 and Figure 38 plots can be used to  
predict the output swing. These plots also show several load lines corresponding to loads tied between the  
output and ground. In each case, the intersection of the device plot at the appropriate temperature with the load  
line would be the typical output swing possible for that load. For example, a 600-load can accommodate an  
output swing to within 100mV of Vand to 250mV of V+ (VS = ±5V) corresponding to a typical 9.65VPP unclipped  
swing.  
Figure 37. Steady State Output Sourcing Characteristics with Load Lines  
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Estimating the Output Voltage Swing (continued)  
Figure 38. Steady State Output Sinking Characteristics with Load Lines  
7.6 Output Short Circuit Current and Dissipation Issues:  
The LM8272 output stage is designed for maximum output current capability. Even though momentary output  
shorts to ground and either supply can be tolerated at all operating voltages, longer lasting short conditions can  
cause the junction temperature to rise beyond the absolute maximum rating of the device, especially at higher  
supply voltage conditions. Below supply voltage of 6V, output short circuit condition can be tolerated indefinitely.  
With the Op Amp tied to a load, the device power dissipation consists of the quiescent power due to the supply  
current flow into the device, in addition to power dissipation due to the load current. The load portion of the  
power itself could include an average value (due to a DC load current) and an AC component. DC load current  
would flow if there is an output voltage offset, or if the output AC average current is non-zero, or if the Op Amp  
operates in a single supply application where the output is maintained somewhere in the range of linear  
operation. Therefore:  
Ptotal = PQ + PDC + PAC  
(1)  
(2)  
(3)  
PQ = IS · VS (Op Amp Quiescent Power Dissipation)  
PDC = IO · (Vr - Vo) (DC Load Power)  
PAC = See Table 1 below  
where:  
(AC Load Power)  
IS: Supply Current  
VS: Total Supply Voltage (V+ - V)  
VO: Average Output Voltage  
Vr: V+ for sourcing and Vfor sinking current  
Table 1 below shows the maximum AC component of the load power dissipated by the Op Amp for standard  
Sinusoidal, Triangular, and Square Waveforms:  
Table 1. Normalized AC Power Dissipated in the Output Stage for Standard Waveforms  
PAC (W./V2)  
SINUSOIDAL  
TRIANGULAR  
SQUARE  
50.7 × 103  
46.9 × 103  
62.5 × 103  
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2
The table entries are normalized to VS /RL. To figure out the AC load current component of power dissipation,  
2
simply multiply the table entry corresponding to the output waveform by the factor VS /RL. For example, with  
±12V supplies, a 600load, and triangular waveform power dissipation in the output stage is calculated as:  
PAC = (46.9 × 103) · [242/600] = 45.0mW  
(4)  
7.7 Other Application Hints:  
The use of supply decoupling is mandatory in most applications. As with most relatively high speed/high output  
current Op Amps, best results are achieved when each supply line is decoupled with two capacitors; a small  
value ceramic capacitor (0.01µF) placed very close to the supply lead in addition to a large value Tantalum or  
Aluminum (> 4.7µF). The large capacitor can be shared by more than one device if necessary. The small  
ceramic capacitor maintains low supply impedance at high frequencies while the large capacitor will act as the  
charge “bucket” for fast load current spikes at the Op Amp output. The combination of these capacitors will  
provide supply decoupling and will help keep the Op Amp oscillation free under any load.  
7.8 LM8272 Advantages:  
Compared to other Rail-to-Rail Input/Output devices, the LM8272 offers several advantages such as:  
Improved cross over distortion  
Nearly constant supply current throughout the output voltage swing range and close to either rail.  
Nearly constant Unity gain frequency (fu) and Phase Margin (Phim) for all operating supplies and load  
conditions.  
No output phase reversal under input overload condition.  
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8 Device and Documentation Support  
8.1 Community Resources  
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective  
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of  
Use.  
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration  
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help  
solve problems with fellow engineers.  
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and  
contact information for technical support.  
8.2 Trademarks  
E2E is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
8.3 Electrostatic Discharge Caution  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
8.4 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
9 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
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PACKAGE OPTION ADDENDUM  
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20-Jun-2023  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
LM8272MM  
LIFEBUY  
VSSOP  
DGK  
8
1000  
Non-RoHS  
& Green  
Call TI  
Level-1-260C-UNLIM  
-40 to 85  
A60  
LM8272MM/NOPB  
LM8272MMX/NOPB  
LIFEBUY  
ACTIVE  
VSSOP  
VSSOP  
DGK  
DGK  
8
8
1000 RoHS & Green  
3500 RoHS & Green  
SN  
SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 85  
-40 to 85  
A60  
A60  
Samples  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
20-Jun-2023  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
29-Oct-2021  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LM8272MM  
VSSOP  
VSSOP  
VSSOP  
DGK  
DGK  
DGK  
8
8
8
1000  
1000  
3500  
178.0  
178.0  
330.0  
12.4  
12.4  
12.4  
5.3  
5.3  
5.3  
3.4  
3.4  
3.4  
1.4  
1.4  
1.4  
8.0  
8.0  
8.0  
12.0  
12.0  
12.0  
Q1  
Q1  
Q1  
LM8272MM/NOPB  
LM8272MMX/NOPB  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
29-Oct-2021  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LM8272MM  
VSSOP  
VSSOP  
VSSOP  
DGK  
DGK  
DGK  
8
8
8
1000  
1000  
3500  
208.0  
208.0  
367.0  
191.0  
191.0  
367.0  
35.0  
35.0  
35.0  
LM8272MM/NOPB  
LM8272MMX/NOPB  
Pack Materials-Page 2  
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DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”  
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY  
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD  
PARTY INTELLECTUAL PROPERTY RIGHTS.  
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate  
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Copyright © 2023, Texas Instruments Incorporated  

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