LMH6619QMAK/NOPB [TI]
汽车双路 130MHz、1.25mA RRIO 运算放大器 | D | 8 | -40 to 105;
| 型号： | LMH6619QMAK/NOPB |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 汽车双路 130MHz、1.25mA RRIO 运算放大器 | D | 8 | -40 to 105 放大器 运算放大器 |
| 文件： | 总33页 (文件大小：1460K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LMH6619Q
www.ti.com
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
LMH6619Q 130 MHz, 1.25 mA RRIO Operational Amplifier
Check for Samples: LMH6619Q
1
FEATURES
•
•
AEC-Q100 grade 2 qualified −40°C to +105°C
Manufactured on an automotive grade flow
23
•
VS = 5V, RL = 1 kΩ, TA = 25°C and AV = +1,
unless otherwise specified.
APPLICATIONS
•
Operating voltage range 2.7V to 11V
Supply current per channel 1.25 mA
Small signal bandwidth 130 MHz
Input offset voltage (limit at 25°C) ±0.75 mV
Slew rate 55 V/µs
•
•
•
•
•
•
•
•
ADC driver
•
•
•
•
•
•
•
DAC buffer
Active filters
High speed sensor amplifier
Current sense amplifier
Portable video
Settling time to 0.1% 90 ns
Settling time to 0.01% 120 ns
STB, TV video amplifier
Automotive
SFDR (f = 100 kHz, AV = +1, VOUT = 2 VPP) 100
dBc
•
•
•
0.1 dB bandwidth (AV = +2) 15 MHz
Low voltage noise 10 nV/√Hz
Rail-to-Rail input and output
DESCRIPTION
The LMH6619Q (dual) is a 130 MHz rail-to-rail input and output amplifier designed for ease of use in a wide
range of applications requiring high speed, low supply current, low noise, and the ability to drive complex ADC
and video loads. The operating voltage range extends from 2.7V to 11V and the supply current is typically 1.25
mA per channel at 5V. The LMH6619Q is a member of the PowerWise® family and have an exceptional power-
to-performance ratio.
The amplifier’s voltage feedback design topology provides balanced inputs and high open loop gain for ease of
use and accuracy in applications such as active filter design. Offset voltage is typically 0.1 mV and settling time
to 0.01% is 120 ns which combined with an 100 dBc SFDR at 100 kHz makes the part suitable for use as an
input buffer for popular 8-bit, 10-bit, 12-bit and 14-bit mega-sample ADCs.
The input common mode range extends 200 mV beyond the supply rails. On a single 5V supply with a ground
terminated 150Ω load the output swings to within 37 mV of the ground rail, while a mid-rail terminated 1 kΩ load
will swing to 77 mV of either rail, providing true single supply operation and maximum signal dynamic range on
low power rails. The amplifier output will source and sink 35 mA and drive up to 30 pF loads without the need for
external compensation.
The LMH6619Q is offered in the 8-Pin SOIC package.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
3
PowerWise, WEBENCH are registered trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCT PREVIEW information concerns products in the
formative or design phase of development. Characteristic data and
other specifications are design goals. Texas Instruments reserves
the right to change or discontinue these products without notice.
Copyright © 2012, Texas Instruments Incorporated
LMH6619Q
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
www.ti.com
Typical Application
Figure 1. Single to Differential ADC Driver
+
V
+
V
0.1 mF
10 mF
33W
-
+
560W
560W
V
10 mF
LMH6619
INPUT
+
220 pF
0.1 mF
10 mF
560W
560W
+
V
ADC121S625
-
33W
560W
LMH6619
+
220 pF
560W
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
(1)
Absolute Maximum Ratings
ESD Tolerance
(2)
Human Body Model
For input pins only
For all other pins
2000V
2000V
Machine Model
200V
Supply Voltage (VS = V+ – V−)
12V
(3)
Junction Temperature
150°C max
–65°C to 150°C
Storage Temperature Range
Soldering Information:
See product folder at www.ti.com and www.ti.com/ lit/an/snoa549c /snoa549c.pdf.
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
(2) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
(3) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
(1)
Operating Ratings
Supply Voltage (VS = V+ – V−)
2.7V to 11V
(2)
Ambient Temperature Range
Package Thermal Resistance (θJA
8-Pin SOIC
−40°C to +105°C
)
160°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
(2) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
2
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Product Folder Links: LMH6619Q
LMH6619Q
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
+3V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 3V, V− = 0V, VCM = VO = V+/2, AV = +1 (RF = 0Ω),
(1)
otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
Typ
Max
Units
(2)
(3)
(2)
Frequency Domain Response
SSBW
–3 dB Bandwidth Small Signal
AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP
120
56
MHz
MHz
AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP
GBW
Gain Bandwidth
AV = 10, RF = 2 kΩ, RG = 221Ω,
RL = 1 kΩ, VOUT = 0.2 VPP
55
63
LSBW
−3 dB Bandwidth Large Signal
AV = 1, RL = 1 kΩ, VOUT = 2 VPP
AV = 2, RL = 150Ω, VOUT = 2 VPP
AV = 1, CL = 5 pF
13
13
1.5
15
MHz
Peak
Peaking
dB
0.1
0.1 dB Bandwidth
AV = 2, VOUT = 0.5 VPP
,
MHz
dBBW
RF = RG = 825Ω
DG
DP
Differential Gain
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
0.1
0.1
%
RL = 150Ω to V+/2
Differential Phase
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
deg
RL = 150Ω to V+/2
Time Domain Response
tr/tf
Rise & Fall Time
Slew Rate
2V Step, AV = 1
2V Step, AV = 1
2V Step, AV = −1
2V Step, AV = −1
36
46
ns
SR
36
V/μs
ts_0.1
ts_0.01
0.1% Settling Time
0.01% Settling Time
90
ns
120
Noise and Distortion Performance
SFDR
Spurious Free Dynamic Range
fC = 100 kHz, VOUT= 2 VPP, RL = 1 kΩ
fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ
fC = 5 MHz, VOUT = 2 VPP, RL = 1 kΩ
f = 100 kHz
100
61
47
10
1
dBc
en
in
Input Voltage Noise Density
Input Current Noise Density
Crosstalk
nV/
pA/
dB
f = 100 kHz
CT
f = 5 MHz, VIN = 2 VPP
80
Input, DC Performance
VOS
Input Offset Voltage
VCM = 0.5V (pnp active)
VCM = 2.5V (npn active)
(4)
0.1
±0.75
±1.3
mV
TCVOS Input Offset Voltage Temperature Drift
0.8
−1.4
+1.0
0.01
1.5
μV/°C
IB
Input Bias Current
VCM = 0.5V (pnp active)
VCM = 2.5V (npn active)
−2.6
+1.8
μA
IOS
Input Offset Current
±0.27
μA
pF
MΩ
V
CIN
Input Capacitance
RIN
Input Resistance
8
CMVR
CMRR
Common Mode Voltage Range
Common Mode Rejection Ratio
DC, CMRR ≥ 65 dB
−0.2
78
3.2
VCM Stepped from −0.1V to 1.4V
VCM Stepped from 2.0V to 3.1V
RL = 1 kΩ to +2.7V or +0.3V
RL = 150Ω to +2.6V or +0.4V
96
107
98
dB
dB
81
AOL
Open Loop Voltage Gain
85
76
82
Output DC Characteristics
(1) Boldface limits apply to temperature range of −40°C to 105°C
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the
Statistical Quality Control (SQC) method.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
(4) Voltage average drift is determined by dividing the change in VOS by temperature change.
Copyright © 2012, Texas Instruments Incorporated
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+3V Electrical Characteristics (continued)
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 3V, V− = 0V, VCM = VO = V+/2, AV = +1 (RF = 0Ω),
otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes. (1)
Symbol
Parameter
Condition
Min
Typ
Max
Units
(2)
(3)
(2)
VOUT
Output Voltage Swing High (Voltage from RL = 1 kΩ to V+/2
50
160
62
56
62
V+ Supply Rail)
RL =150Ω to V+/2
172
198
Output Voltage Swing Low (Voltage from RL = 1 kΩ to V+/2
68
76
mV from
either rail
V− Supply Rail)
RL =150Ω to V+/2
175
34
189
222
RL = 150Ω to V−
44
48
(5)
IOUT
Linear Output Current
Output Resistance
VOUT = V+/2
f = 1 MHz
±25
84
±35
mA
ROUT
0.17
Ω
Power Supply Performance
PSRR
IS
Power Supply Rejection Ratio
DC, VCM = 0.5V, VS = 2.7V to 11V
104
1.2
dB
Supply Current
(per channel)
RL = ∞
1.5
1.75
(5) Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage
the part.
4
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Product Folder Links: LMH6619Q
LMH6619Q
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
+5V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, AV = +1 (RF = 0Ω),
otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
Typ
Max
Units
(1)
(2)
(1)
Frequency Domain Response
SSBW
–3 dB Bandwidth Small Signal
AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP
130
53
MHz
MHz
AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP
GBW
Gain Bandwidth
AV = 10, RF = 2 kΩ, RG = 221Ω,
RL = 1 kΩ, VOUT = 0.2 VPP
54
57
LSBW
−3 dB Bandwidth Large Signal
AV = 1, RL = 1 kΩ, VOUT = 2 VPP
AV = 2, RL = 150Ω, VOUT = 2 VPP
AV = 1, CL = 5 pF
15
15
0.5
15
MHz
Peak
Peaking
dB
0.1
0.1 dB Bandwidth
AV = 2, VOUT = 0.5 VPP
,
MHz
dBBW
RF = RG = 1 kΩ
DG
DP
Differential Gain
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
0.1
0.1
%
RL = 150Ω to V+/2
Differential Phase
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
deg
RL = 150Ω to V+/2
Time Domain Response
tr/tf
Rise & Fall Time
Slew Rate
2V Step, AV = 1
2V Step, AV = 1
2V Step, AV = −1
2V Step, AV = −1
30
55
ns
SR
44
V/μs
ts_0.1
ts_0.01
0.1% Settling Time
0.01% Settling Time
90
ns
120
Distortion and Noise Performance
SFDR
Spurious Free Dynamic Range
fC = 100 kHz, VOUT = 2 VPP, RL = 1 kΩ
fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ
fC = 5 MHz, VO = 2 VPP, RL = 1 kΩ
f = 100 kHz
100
88
61
10
1
dBc
en
in
Input Voltage Noise Density
Input Current Noise Density
Crosstalk
nV/
pA/
dB
f = 100 kHz
CT
f = 5 MHz, VIN = 2 VPP
80
Input, DC Performance
VOS
Input Offset Voltage
VCM = 0.5V (pnp active)
VCM = 4.5V (npn active)
(3)
0.1
±0.75
±1.3
mV
TCVOS Input Offset Voltage Temperature Drift
0.8
−1.5
+1.0
0.01
1.5
µV/°C
IB
Input Bias Current
VCM = 0.5V (pnp active)
VCM = 4.5V (npn active)
−2.4
+1.9
μA
IOS
Input Offset Current
±0.26
μA
pF
MΩ
V
CIN
Input Capacitance
RIN
Input Resistance
8
CMVR
CMRR
Common Mode Voltage Range
Common Mode Rejection Ratio
DC, CMRR ≥ 65 dB
−0.2
81
5.2
VCM Stepped from −0.1V to 3.4V
VCM Stepped from 4.0V to 5.1V
RL = 1 kΩ to +4.6V or +0.4V
RL = 150Ω to +4.5V or +0.5V
98
108
100
83
dB
dB
84
AOL
Open Loop Voltage Gain
84
78
Output DC Characteristics
(1) Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the
Statistical Quality Control (SQC) method.
(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
(3) Voltage average drift is determined by dividing the change in VOS by temperature change.
Copyright © 2012, Texas Instruments Incorporated
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Product Folder Links: LMH6619Q
LMH6619Q
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
www.ti.com
+5V Electrical Characteristics (continued)
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, AV = +1 (RF = 0Ω),
otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
Typ
Max
Units
(1)
(2)
(1)
VOUT
Output Voltage Swing High Voltage from RL = 1 kΩ to V+/2
60
230
77
73
82
V+ Supply Rail)
RL = 150Ω to V+/2
255
295
Output Voltage Swing Low Voltage from RL = 1 kΩ to V+/2
85
98
mV from
either rail
V− Supply Rail)
RL = 150Ω to V+/2
255
37
275
326
RL = 150Ω to V−
48
50
(4)
IOUT
Linear Output Current
Output Resistance
VOUT = V+/2
f = 1 MHz
±25
84
±35
mA
ROUT
0.17
Ω
Power Supply Performance
PSRR
IS
Power Supply Rejection Ratio
DC, VCM = 0.5V, VS = 2.7V to 11V
104
1.3
dB
Supply Current
(per channel)
RL = ∞
1.5
1.75
(4) Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage
the part.
6
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Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: LMH6619Q
LMH6619Q
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
±5V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = −5V, VCM = VO = 0V, AV = +1 (RF = 0Ω),
otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
Typ
Max
Units
(1)
(2)
(1)
Frequency Domain Response
SSBW
–3 dB Bandwidth Small Signal
AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP
140
53
MHz
MHz
AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP
GBW
Gain Bandwidth
AV = 10, RF = 2 kΩ, RG = 221Ω,
RL = 1 kΩ, VOUT = 0.2 VPP
54
58
LSBW
−3 dB Bandwidth Large Signal
AV = 1, RL = 1 kΩ, VOUT = 2 VPP
AV = 2, RL = 150Ω, VOUT = 2 VPP
AV = 1, CL = 5 pF
16
15
MHz
Peak
Peaking
0.05
15
dB
0.1
0.1 dB Bandwidth
AV = 2, VOUT = 0.5 VPP
,
MHz
dBBW
RF = RG = 1.21 kΩ
DG
DP
Differential Gain
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
0.1
0.1
%
RL = 150Ω to V+/2
Differential Phase
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
deg
RL = 150Ω to V+/2
Time Domain Response
tr/tf
Rise & Fall Time
Slew Rate
2V Step, AV = 1
2V Step, AV = 1
2V Step, AV = −1
2V Step, AV = −1
30
57
ns
SR
45
V/μs
ts_0.1
ts_0.01
0.1% Settling Time
0.01% Settling Time
90
ns
120
Noise and Distortion Performance
SFDR
Spurious Free Dynamic Range
fC = 100 kHz, VOUT = 2 VPP, RL = 1 kΩ
fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ
fC = 5 MHz, VOUT = 2 VPP, RL = 1 kΩ
f = 100 kHz
100
88
70
10
1
dBc
en
in
Input Voltage Noise Density
Input Current Noise Density
Crosstalk
nV/
pA/
dB
f = 100 kHz
CT
f = 5 MHz, VIN = 2 VPP
80
Input DC Performance
VOS
Input Offset Voltage
VCM = −4.5V (pnp active)
VCM = 4.5V (npn active)
(3)
0.1
±0.75
±1.3
mV
TCVOS Input Offset Voltage Temperature Drift
0.9
−1.5
+1.0
0.01
1.5
µV/°C
IB
Input Bias Current
VCM = −4.5V (pnp active)
−2.4
+1.9
μA
VCM = 4.5V (npn active)
IOS
Input Offset Current
±0.26
μA
pF
MΩ
V
CIN
Input Capacitance
RIN
Input Resistance
8
CMVR
CMRR
Common Mode Voltage Range
Common Mode Rejection Ratio
DC, CMRR ≥ 65 dB
−5.2
84
5.2
VCM Stepped from −5.1V to 3.4V
VCM Stepped from 4.0V to 5.1V
RL = 1 kΩ to +4.6V or −4.6V
RL = 150Ω to +4.3V or −4.3V
100
108
95
dB
dB
83
AOL
Open Loop Voltage Gain
86
79
84
Output DC Characteristics
(1) Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the
Statistical Quality Control (SQC) method.
(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
(3) Voltage average drift is determined by dividing the change in VOS by temperature change.
Copyright © 2012, Texas Instruments Incorporated
Submit Documentation Feedback
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Product Folder Links: LMH6619Q
LMH6619Q
SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
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±5V Electrical Characteristics (continued)
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V+ = 5V, V− = −5V, VCM = VO = 0V, AV = +1 (RF = 0Ω),
otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
Typ
Max
Units
(1)
(2)
(1)
VOUT
Output Voltage Swing High (Voltage from RL = 1 kΩ to GND
100
430
115
450
45
111
126
V+ Supply Rail)
RL = 150Ω to GND
457
526
Output Voltage Swing Low (Voltage from RL = 1 kΩ to GND
126
141
mV from
either rail
V− Supply Rail)
RL = 150Ω to GND
484
569
RL = 150Ω to V−
61
62
(4)
IOUT
Linear Output Current
Output Resistance
VOUT = V+/2
f = 1 MHz
±25
84
±35
mA
ROUT
0.17
Ω
Power Supply Performance
PSRR
IS
Power Supply Rejection Ratio
DC, VCM = −4.5V, VS = 2.7V to 11V
RL = ∞
104
dB
Supply Current
(per channel)
1.45
1.65
2.0
(4) Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage
the part.
Connection Diagram
8-Pin SOIC
1
8
+
OUT A
V
A
-
+
2
3
4
7
6
5
-IN A
OUT B
-IN B
+IN A
B
+
-
-
+IN B
V
Figure 2. Top View
8
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
Typical Performance Characteristics
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
Closed Loop Frequency Response for
Closed Loop Frequency Response for
Various Supplies
Various Supplies
3
3
+
V
V
= +1.5V
= -1.5V
+
-
V
V
= +2.5V
= -2.5V
0
-
-3
0
-3
-6
-9
±5V
±1.5V
±2.5V
+
V
V
= +5V
= -5V
-6
-9
-
-12
-15
-18
-21
A = +1
= 0.2V
V
OUT
A
= +1
V
R
= 1 kW
L
L
R
= 150W||3 pF
L
C
= 5 pF
V
= 0.2V
OUT
1
10
100
1000
1
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Closed Loop Frequency Response for
Various Supplies
Closed Loop Frequency Response for
Various Supplies
3
3
+
+
V
= +1.5V
V
= +1.5V
-
-
0
-3
0
-3
V = -1.5V
V = -1.5V
+
+
V
= +5V
+
V
= +5V
-
V
= +2.5V
V = -5V
-
-
V = -5V
V = -2.5V
+
V
= +2.5V
-6
-6
-
V = -2.5V
-9
-9
A
= +2
V
-12
-15
-18
-12
-15
-18
A
= +2
R
R
V
= R = 2 kW
G
V
F
L
R
V
= 1 kW
= 150W
L
= 0.2V
= 0.4V
OUT
OUT
1
10
100
1000
1
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Closed Loop Frequency Response for
Closed Loop Frequency Response for
Various Temperatures
Various Temperatures
3
3
-40°C
-40°C
0
0
-3
-3
25°C
85°C
25°C
85°C
-6
-9
-6
-9
A
V
= +1
A
V
= +1
V
+
V
+
125°C
125°C
= +2.5V
= +2.5V
-12
-15
-18
-21
-12
-15
-18
-21
-
-
V = -2.5V
V = -2.5V
V
= 0.2 V
PP
V
= 0.2 V
OUT PP
OUT
R
= 1 kW
R
C
= 150W
L
L
L
L
C
= 10 pF
= 10 pF
1
10
100
1000
1
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
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Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
Closed Loop Gain
vs.
Frequency for
Various Gains
Large Signal Frequency Response
3
0
3
+
V
= +5V
= -5V
-
0
V
A = 1
A = 2
-3
+
-3
V
= +2.5V
A = 5
+
-
-6
V
= +1.5V
= -1.5V
V
= -2.5V
-
-6
A = 10
V
-9
-9
+
V
V
= +2.5V
= -2.5V
= 1 kW
= 5 pF
-12
-15
-18
-21
-
A
= +2
V
-12
-15
-18
R
R
V
= R = 2 kW
R
C
V
F
L
G
L
L
= 1 kW
= 2V
= 0.2V
OUT
OUT
1
10
100
1000
1
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Small Signal Frequency Response with
±0.1 dB Gain Flatness for Various Supplies
Various Capacitive Load
0.3
5
C
= 30 pF
L
4
3
2
1
0
0.2
C = 20 pF
L
C
L
= 10 pF
±1.5V
0.1
±2.5V
-1
-2
-3
-4
-5
-6
-7
-8
-9
C
= 5 pF
L
0
C
= 0 pF
L
±5V
+
-
-0.1
-0.2
-0.3
V
= +5V
V = -5V
R
L
= 1 kW
V
= 0.2V
OUT
1
10
100
1000
0.01
0.10
1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
HD2
vs.
Small Signal Frequency Response with
Capacitive Load and Various RISO
Frequency and Supply Voltage
-20
11
+
V
= 2 V
PP
+
-
OUT
V
= +5V
V
= +1.5V
9
-30
-40
-
R
= 1 kW
L
V = -5V
V = -1.5V
7
R
= 0W
F
V
= 0.2 V
OUT
PP
A = +1
5
C
L
= 100 pF
-50
+
-
R
= 0
ISO
V
= +2.5V
3
-60
V = -2.5V
1
-70
-1
-3
-5
-7
-9
R
= 25
= 50
ISO
-80
R
R
= 100
ISO
ISO
-90
+
-
V
= +5V
R
= 75
ISO
-100
V = -5V
-110
0.1
1
FREQUENCY (MHz)
10
1
10
100
1000
FREQUENCY (MHz)
10
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
HD3
HD2 and HD3
vs.
vs.
Frequency and Supply Voltage
Frequency and Load
-20
-20
-30
+
-
V
V
V
= 2 V
PP
V
= 2 V
PP
OUT
+
OUT
V
V
= +1.5V
= -1.5V
-30
-40
= +2.5V
R
= 1 kW
L
F
HD3, R = 150W
L
-
= -2.5V
R
= 0W
-40
A = +1
R
= 0W
F
-50
-50
A = +1
HD2, R = 150W
L
-60
-60
+
-
V
V
= +2.5V
= -2.5V
-70
-70
-80
-80
-90
-90
HD2, R = 1 kW
L
+
-
V
V
= +5V
= -5V
-100
-100
HD3, R = 1 kW
L
-110
-110
0.1
1
10
0.1
1
10
FREQUENCY (MHz)
FREQUENCY (MHz)
HD2 and HD3
vs.
HD2 and HD3
vs.
Common Mode Voltage
Common Mode Voltage
-50
-60
-70
-80
-90
-50
-60
-70
-80
-90
HD2
f
= 1 MHz
f
= 100 kHz
IN
IN
HD2
+
+
V
= +2.5V
V
= 1 V
V
= 1 V
OUT PP
OUT
PP
V
= +2.5V
-
V = -2.5V
-
R
L
= 1 kW
R
= 1 kW
L
V = -2.5V
R
F
= 0
R
F
= 0
A = +1
A = +1
-100
-110
-120
-100
-110
-120
HD3
HD3
+
HD3
HD2
HD2
+
HD3
+
+
+
+
V
= +2.5V
V
= +2.5V
V
= +5V
V
= +5V
V
= +5V
V = +5V
-
-
-
-
-
-
V = -2.5V
V = -2.5V
V = -5V
V = -5V
V = -5V
V = -5V
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
INPUT COMMON MODE VOLTAGE (V)
INPUT COMMON MODE VOLTAGE (V)
HD2
vs.
HD3
vs.
Frequency and Gain
Frequency and Gain
-30
-40
-30
-40
V
V
= 2 V
PP
V
V
= 2 V
PP
OUT
+
OUT
+
= +2.5V
= +2.5V
-
-
V = -2.5V
V = -2.5V
-50
-60
-50
-60
R
= 1 kW
= 2 kW
R
= 1 kW
= 2 kW
L
F
G = +10, HD2
L
F
R
R
G = +2, HD3
-70
-70
G = +10, HD3
-80
-80
G = +1, HD2
-90
-90
G = +1, HD3
-100
-110
-100
G = +2, HD2
1
-110
10
1
10
0.1
0.1
FREQUENCY (MHz)
FREQUENCY (MHz)
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Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
HD2
vs.
Open Loop Gain/Phase
Output Swing
120
100
80
120
100
-30
-40
+
-
V
V
= +2.5V
= -2.5V
10 MHz
PHASE
AV = -1
80
60
40
20
-50
-60
-70
-80
R
L
= 1 kW
GAIN
+
5 MHz
60
40
20
0
1 MHz
V
= +2.5V
-
0
V
= -2.5V
500 kHz
R
C
= 1 kW
L
-90
-20
-40
100 kHz
= 5 pF
L
-20
1k
-100
1M
100M
10k 100k
10M
1G
0
1
2
3
4
5
FREQUENCY (Hz)
V
(V
)
OUT PP
HD3
vs.
HD2
vs.
Output Swing
Output Swing
-20
-30
-40
-50
-20
-30
-40
-50
+
-
10 MHz
V
V
A
= +2.5V
= -2.5V
= -1
10 MHz
V
+
-
5 MHz
V
V
A
= +2.5V
R
= 1 kW
L
= -2.5V
= +2
5 MHz
-60
-70
-80
-90
-60
-70
V
R
L
= 1 kW
1 MHz
-80
1 MHz
500 kHz
-90
500 kHz
1
-100
-110
-100
-110
100 kHz
100 kHz
0
2
3
4
5
0
1
2
3
4
5
V
(V
)
V
(V
)
OUT PP
OUT PP
HD2
vs.
HD3
vs.
Output Swing
Output Swing
-20
-30
-40
-50
-20
-30
-40
-50
10 MHz
10 MHz
+
V
V
A
= +2.5V
5 MHz
-
+
-
= -2.5V
= +2
V
= +2.5V
5 MHz
V
V = -2.5V
-60
-70
-60
-70
1 MHz
R
L
= 150W
A
= +2
V
R
= 1 kW
L
500 kHz
-80
-80
1 MHz
-90
-90
100 kHz
500 kHz
-100
-110
-100
-110
100 kHz
0
1
2
3
4
5
0
1
2
3
4
5
V
(V
)
V
(V )
OUT PP
OUT PP
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
HD3
vs.
THD
vs.
Output Swing
Output Swing
-30
-40
-20
-30
-40
-50
10 MHz
10 MHz
+
-
V
V
A
= +2.5V
= -2.5V
= +2
5 MHz
-50
-60
-70
-80
+
-
5 MHz
V
= +2.5V
= -2.5V
= -1
V
V
A
-60
-70
R
L
= 150W
V
1 MHz
R
= 1 kW
L
1 MHz
-80
500 kHz
500 kHz
-90
-90
-100
-110
100 kHz
100 kHz
2
-100
0
1
2
3
4
5
0
1
3
4
5
OUTPUT SWING (V
)
PP
V
(V )
OUT PP
Settling Time
vs.
Input Step Amplitude
Input Noise
vs.
(Output Slew and Settle Time)
Frequency
1000
1000
100
10
140
120
100
80
+
V
= +2.5V
-
V = -2.5V
FALLING, 0.1%
RISING, 0.1%
100
10
1
60
VOLTAGE NOISE
40
20
0
A
V
V
= -1
V
+
= +2.5V
= -2.5V
-
CURRENT NOISE
1
10M
10k 100k
1M
10
100
1k
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (Hz)
OUTPUT SWING (V
)
PP
VOS
vs.
VOS
vs.
VOUT
VOUT
6.0
4.0
6.0
+
+
-
V
= +2.5V
V
= +2.5V
-
V = -2.5V
V = -2.5V
4.0
2.0
R
L
= 150W
R
L
= 1 kW
2.0
-40°C
25°C
-40°C
25°C
0
0
125°C
125°C
-2.0
-2.0
-4.0
-6.0
-4.0
-6.0
-2.5 -2.0 -1.5 -1.0 -0.5
0
0.5 1.0 1.5 2.0 2.5
(V)
-2.5 -2.0 -1.5 -1.0 -0.5
0
0.5 1.0 1.5 2.0 2.5
(V)
V
V
OUT
OUT
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Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
VOS
vs.
VOS
vs.
VCM
VS (pnp)
0.3
0.2
0.1
0
0.3
0.2
0.1
0
-40°C
-40°C
25°C
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
25°C
-
V
V
V
= -0.5V
-0.1
+
-
= V - V
S
125°C
= 0V
-0.2
-0.3
-0.4
CM
+
V
V
= +2.5V
= -2.5V
-
125°C
2
3
4
5
6
7
8
9
10 11 12
-0.5
0.5
1.5
2.5
(V)
3.5
4.5
5.5
V
S
(V)
V
CM
VOS
vs.
VOS
vs.
VS (npn)
IOUT
0.3
0.2
0.1
0
0.6
+
V
= +2.5V
-
-40°C
-40°C
0.4
0.2
V = -2.5V
25°C
0
-0.2
-0.4
-0.6
-0.8
25°C
125°C
-0.1
-0.2
-0.3
-0.4
+
V
V
V
= +0.5V
125°C
+
-
= V - V
S
= 0V
CM
2
3
4
5
6
7
8
9
10 11 12
-40 -30 -20 -10
0
10 20 30 40
V
S
(V)
I
(mA)
OUT
IB
vs.
VOS Distribution (pnp and npn)
VS (pnp)
9
8
7
-1.0
-1.5
-2.0
-
V
V
V
= -0.5V
+
-
= V - V
S
= 0V
CM
6
5
4
3
25°C
-40°C
125°C
2
1
0
0
2
4
8
10
12
6
V
S
(V)
V
OS
(mV)
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
IB
vs.
VS (npn)
IS
vs.
VS
1.5
1.0
0.5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
+
V
V
V
= +0.5V
= V+ - V
= 0V
125°C
-
S
CM
25°C
125°C
25°C
-40°C
-
V
V
V
= -0.5V
-40°C
+
-
= V - V
S
= 0.5V
CM
8
2
4
8
10
12
0
2
4
6
10
12
0
6
V
(V)
S
V
(V)
S
VOUT
vs.
VOUT
vs.
VS
VS
150
600
400
VOLTAGE V
+
IS
VOLTAGE V
+
IS
OUT
OUT
BELOW V SUPPLY
BELOW V SUPPLY
100
R
= 1 kW to
L
50
0
200
0
MID-RAIL
R
= 150W to
L
MID-RAIL
-40°C
25°C 125°C
-40°C
25°C
IS
125°C
50
200
100
150
400
600
VOLTAGE V
-
VOLTAGE V
-
IS
OUT
OUT
ABOVE V SUPPLY
ABOVE V SUPPLY
2
4
6
8
10
12
2
4
6
8
10
12
V
S
(V)
V
(V)
S
VOUT
vs.
Closed Loop Output Impedance
vs.
VS
Frequency AV = +1
1000
100
20
25
30
35
40
+
VOLTAGE V
-
IS
OUT
V
V
= +2.5V
= -2.5V
-
ABOVE V SUPPLY
-
V
R
= 0V
= 150W to GND
L
-40°C
10
1
25°C
0.1
125°C
0.01
0.001
0
2
4
8
10
12
6
1
100
0.01
0.1
10
+
FREQUENCY (MHz)
V
(V)
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Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
PSRR
vs.
PSRR
vs.
Frequency
Frequency
120
100
80
60
40
20
0
120
100
80
60
40
20
0
-PSRR
+PSRR
-PSRR
+PSRR
+
-
+
-
V
V
= +1.5V
= -1.5V
V
V
= +2.5V
= -2.5V
100M
100M
10 100 1k 10k 100k 1M 10M
FREQUENCY (Hz)
10
100 1k 10k 100k 1M 10M
FREQUENCY (Hz)
CMRR
vs.
Frequency
Crosstalk Rejection vs. Frequency (Output to Output)
100
110
100
90
+
+
-
V
V
V
A
= +2.5V
= -2.5V
V
V
= +2.5V
= -2.5V
-
= 2 V
OUTCHA
PP
90
80
= 2V/V
VCHB
80
70
60
50
70
60
40
30
0.0001 0.001 0.01
1
10
100
0.1
100k
1M
10M
100M
FREQUENCY (MHz)
FREQUENCY (Hz)
Small Signal Step Response
Small Signal Step Response
+
+
V
=+1.5V
V
= +2.5V
-
-
V =-1.5V
A=+1
V = -2.5V
A = +1
V
OUT
=0.2V
V
OUT
= 0.2V
R
L
=1kW
R
L
= 1 kW
25 ns/DIV
25 ns/DIV
Small Signal Step Response
Small Signal Step Response
+
+
V
V
= +5V
= -5V
V
=+2.5V
-
-
V =-2.5V
A=-1
A = +1
V
= 0.2V
V
=0.2V
OUT
= 1 kW
OUT
R =1kW
L
R
L
25 ns/DIV
25 ns/DIV
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
Typical Performance Characteristics (continued)
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, unless otherwise specified.
Small Signal Step Response
Small Signal Step Response
+
-
+
V
V
= +5V
= -5V
V
= +1.5V
-
V = -1.5V
A = -1
A = -1
V
OUT
= 0.2V
V
OUT
= 0.2V
R
= 1 kW
R
L
= 1 kW
L
25 ns/DIV
25 ns/DIV
Small Signal Step Response
Small Signal Step Response
+
+
V
= +2.5V
V
= +1.5V
-
-
V = -2.5V
A = +2
V = -1.5V
A = +2
V
= 0.2V
V
= 0.2V
OUT
OUT
R = 150W
L
R
= 150W
L
25 ns/DIV
25 ns/DIV
Small Signal Step Response
Large Signal Step Response
+
+
V
V
= +5V
= -5V
V
V
= +2.5V
= -2.5V
-
-
A = +2
A = +1
V
= 0.2V
V
= 2V
OUT
OUT
= 150W
R
R
= 1 kW
L
L
25 ns/DIV
50 ns/DIV
Large Signal Step Response
Overload Recovery Waveform
6
4
+
V
OUT
V
V
= +5V
= -5V
-
A = +5
2
0
+
V
= +2.5V
-
-2
V = -2.5V
A = +2
V
= 2V
OUT
-4
-6
V
R
= 150W
IN
L
50 ns/DIV
100 ns/DIV
Application Information
The LMH6619Q is based on National Semiconductor’s proprietary VIP10 dielectrically isolated bipolar process.
This device family architecture features the following:
•
Complimentary bipolar devices with exceptionally high ft (∼8 GHz) even under low supply voltage (2.7V) and
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low bias current.
•
•
•
Common emitter push-push output stage. This architecture allows the output to reach within millivolts of either
supply rail.
Consistent performance from any supply voltage
important specifications (e.g. BW, SR, IOUT.)
with little variation with supply voltage for the most
(2.7V - 11V)
Significant power saving compared to competitive devices on the market with similar performance.
With 3V supplies and a common mode input voltage range that extends beyond either supply rail, the
LMH6619Q is well suited to many low voltage/low power applications. Even with 3V supplies, the −3 dB BW (at
AV = +1) is typically 120 MHz.
The LMH6619Q is designed to avoid output phase reversal. With input over-drive, the output is kept near the
supply rail (or as close to it as mandated by the closed loop gain setting and the input voltage). Figure 3 shows
the input and output voltage when the input voltage significantly exceeds the supply voltages.
4
+
V
IN
V
3
2
1
0
V
OUT
-1
-2
-3
-4
-
V
2 ms/DIV
Figure 3. Input and Output Shown with CMVR Exceeded
SINGLE TO DIFFERENTIAL ADC DRIVER
Figure 4 shows the LMH6619Q used to drive a differential ADC with a single-ended input. The ADC121S625 is a
fully differential 12-bit ADC. Table 1 shows the performance data of the LMH6619Q and the ADC121S625.
+
V
+
V
0.1 mF
10 mF
33W
-
+
560W
560W
V
10 mF
LMH6619
INPUT
+
220 pF
0.1 mF
10 mF
560W
560W
+
V
ADC121S625
-
33W
560W
LMH6619
+
220 pF
560W
Figure 4. LMH6619Q Driving an ADC121S625
Table 1. Performance Data for the Single to Differential ADC Driver
Parameter
Measured Value
10 kHz
Signal Frequency
Signal Amplitude
2.5V
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Table 1. Performance Data for the Single to Differential ADC Driver (continued)
Parameter
SINAD
SNR
Measured Value
67.9 dB
68.29 dB
−78.6 dB
75.0 dB
THD
SFDR
ENOB
11.0 bits
DIFFERENTIAL ADC DRIVER
Its low noise and wide bandwidth make the LMH6619Q an excellent choice for driving a 12-bit ADC. Figure 5
shows the LMH6619Q driving an ADC121S705. The ADC121S705 is a fully differential 12-bit ADC.The
LMH6619Q is set up in a 2nd order multiple-feedback configuration with a gain of −1. The −3 dB point is at 500
kHz and the −0.01 dB point is at 100 kHz. The 22Ω resistor and 390 pF capacitor form an antialiasing filter for
the ADC121S705. The capacitor also stores and delivers charge to the switched capacitor input of the ADC. The
capacitive load on the LMH6619Q created by the 390 pF capacitor is decreased by the 22Ω resistor. Table 2
shows the performance data.
549W
1 mF 549W
+IN
1.24 kW
150 pF
+
V
1 nF
+
V
0.1 mF 10 mF
+
V
14.3 kW
-
22W
LMH6619
0.1 mF 10 mF
+
390 pF
0.1 mF
5.6 mF
14.3 kW
ADC121S705
549W
1 mF 549W
22W
-IN
390 pF
1.24 kW
150 pF
+
V
1 nF
+
V
0.1 mF
10 mF
14.3 kW
-
LMH6619
+
0.1 mF
5.6 mF
14.3 kW
Figure 5. LMH6619Q Driving an ADC121S705
Table 2. Performance Data for the Differential ADC Driver
Parameter
Signal Frequency
SINAD
Measured Value
100 kHz
71.5 dB
SNR
71.87 dB
THD
−82.4 dB
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Table 2. Performance Data for the Differential ADC Driver (continued)
Parameter
SFDR
Measured Value
90.97 dB
ENOB
11.6 bits
DC LEVEL SHIFTING
Often a signal must be both amplified and level shifted while using a single supply for the op amp. The circuit in
Figure 6 can do both of these tasks. The procedure for specifying the resistor values is as follows.
1. Determine the input voltage.
2. Calculate the input voltage midpoint, VINMID = VINMIN + (VINMAX – VINMIN)/2.
3. Determine the output voltage needed.
4. Calculate the output voltage midpoint, VOUTMID = VOUTMIN + (VOUTMAX – VOUTMIN)/2.
5. Calculate the gain needed, gain = (VOUTMAX – VOUTMIN)/(VINMAX – VINMIN
)
6. Calculate the amount the voltage needs to be shifted from input to output, ΔVOUT = VOUTMID – gain x VINMID
.
7. Set the supply voltage to be used.
8. Calculate the noise gain, noise gain = gain + ΔVOUT/VS.
9. Set RF.
10. Calculate R1, R1 = RF/gain.
11. Calculate R2, R2 = RF/(noise gain-gain).
12. Calculate RG, RG= RF/(noise gain – 1).
Check that both the VIN and VOUT are within the voltage ranges of the LMH6619Q.
The following example is for a VIN of 0V to 1V with a VOUT of 2V to 4V.
1. VIN = 0V to 1V
2. VINMID = 0V + (1V – 0V)/2 = 0.5V
3. VOUT = 2V to 4V
4. VOUTMID = 2V + (4V – 2V)/2 = 3V
5. Gain = (4V – 2V)/(1V – 0V) = 2
6. ΔVOUT = 3V – 2 x 0.5V = 2
7. For the example the supply voltage will be +5V.
8. Noise gain = 2 + 2/5V = 2.4
9. RF = 2 kΩ
10. R1 = 2 kΩ/2 = 1 kΩ
11. R2 = 2 kΩ/(2.4-2) = 5 kΩ
12. RG = 2 kΩ/(2.4 – 1) = 1.43 kΩ
+
+
V
V
R
2
R
1
V
IN
+
LMH6619Q
V
OUT
-
R
R
F
G
Figure 6. DC Level Shifting
20
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
4th ORDER MULTIPLE FEEDBACK LOW-PASS FILTER
Figure 7 shows the LMH6619Q used as the amplifier in a multiple feedback low pass filter. This filter is set up to
have a gain of +1 and a −3 dB point of 1 MHz. Values can be determined by using the WEBENCH® Active Filter
Designer found at amplifiers.national.com.
1.05 kW
1.02 kW
150 pF
62 pF
+
V
+
V
0.1 mF
1 mF
523W
1.05 kW
1 mF
0.1 mF
INPUT
-
1.02 kW
510W
LMH6619
-
330 pF
LMH6619
+
OUTPUT
820 pF
+
0.1 mF
1 mF
0.1 mF
1 mF
-
V
-
V
Figure 7. 4th Order Multiple Feedback Low-Pass Filter
CURRENT SENSE AMPLIFIER
With it’s rail-to-rail input and output capability, low VOS, and low IB the LMH6619Q is an ideal choice for a current
sense amplifier application. Figure 8 shows the schematic of the LMH6619Q set up in a low-side sense
configuration which provides a conversion gain of 2V/A. Voltage error due to VOS can be calculated to be VOS
x
(1 + RF/RG) or 0.6 mV x 21 = 12.6 mV. Voltage error due to IO is IO x RF or 0.26 µA x 1 kΩ = 0.26 mV. Hence
total voltage error is 12.6 mV + 0.26 mV or 12.86 mV which translates into a current error of 12.86 mV/(2 V/A) =
6.43 mA.
+5V
0A to 1A
51W
+
1 kW
LMH6619Q
0.1W
-
51W
1 kW
Figure 8. Current Sense Amplifier
TRANSIMPEDANCE AMPLIFIER
By definition, a photodiode produces either a current or voltage output from exposure to a light source. A
Transimpedance Amplifier (TIA) is utilized to convert this low-level current to a usable voltage signal. The TIA
often will need to be compensated to insure proper operation.
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C
F
R
F
V
S
-
LMH6619Q
C
C
PD
IN
+
Figure 9. Photodiode Modeled with Capacitance Elements
Figure 9 shows the LMH6619Q modeled with photodiode and the internal op amp capacitances. The LMH6619Q
allows circuit operation of a low intensity light due to its low input bias current by using larger values of gain (RF).
The total capacitance (CT) on the inverting terminal of the op amp includes the photodiode capacitance (CPD) and
the input capacitance of the op amp (CIN). This total capacitance (CT) plays an important role in the stability of
the circuit. The noise gain of this circuit determines the stability and is defined by:
1 + sRF (CT + CF)
NG =
1 + sCFRF
(1)
1
1
Where, fZ @
and fP =
2pRFCT
2pRFCF
(2)
OP AMP OPEN
LOOP GAIN
I-V GAIN (W)
NOISE GAIN (NG)
1 + sR (C + C )
F
T
F
1 + sR C
F
F
C
IN
1 +
C
F
0 dB
1
GBWP
1
FREQUENCY
f
@
f
=
z
P
2pR C
F F
2pR C
F
T
Figure 10. Bode Plot of Noise Gain Intersecting with Op Amp Open-Loop Gain
Figure 10 shows the bode plot of the noise gain intersecting the op amp open loop gain. With larger values of
gain, CT and RF create a zero in the transfer function. At higher frequencies the circuit can become unstable due
to excess phase shift around the loop.
A pole at fP in the noise gain function is created by placing a feedback capacitor (CF) across RF. The noise gain
slope is flattened by choosing an appropriate value of CF for optimum performance.
Theoretical expressions for calculating the optimum value of CF and the expected −3 dB bandwidth are:
CT
CF =
2pRF(GBWP)
(3)
GBWP
2pRFCT
f-3 dB
=
(4)
Equation 4 indicates that the −3 dB bandwidth of the TIA is inversely proportional to the feedback resistor.
Therefore, if the bandwidth is important then the best approach would be to have a moderate transimpedance
gain stage followed by a broadband voltage gain stage.
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SNOSC78A –JUNE 2012–REVISED NOVEMBER 2012
Table 3 shows the measurement results of the LMH6619Q with different photodiodes having various
capacitances (CPD) and a feedback resistance (RF) of 1 kΩ.
Table 3. TIA (Figure 1) Compensation and Performance Results
CPD
(pF)
22
CT
(pF)
24
CF CAL
(pF)
7.7
CF USED
(pF)
5.6
f −3 dB CAL
(MHz)
23.7
f −3 dB MEAS
Peaking
(dB)
0.9
(MHz)
20
47
49
10.9
15.8
23.4
10
16.6
15.2
10.8
8
0.8
100
222
102
224
15
11.5
0.9
18
7.81
2.9
Figure 11 shows the frequency response for the various photodiodes in Table 3.
6
3
0
C
C
= 22 pF,
PD
= 5.6 pF
F
-3
-6
C
C
= 47 pF,
PD
= 10 pF
F
-9
C
C
= 100 pF,
PD
= 15 pF
F
-12
-15
-18
C
C
= 222 pF,
PD
= 18 pF
F
100k
1M
10M
100M
1G
FREQUENCY (Hz)
Figure 11. Frequency Response for Various Photodiode and Feedback Capacitors
When analyzing the noise at the output of the TIA, it is important to note that the various noise sources (i.e. op
amp noise voltage, feedback resistor thermal noise, input noise current, photodiode noise current) do not all
operate over the same frequency band. Therefore, when the noise at the output is calculated, this should be
taken into account. The op amp noise voltage will be gained up in the region between the noise gain’s zero and
pole (fZ and fP in Figure 10). The higher the values of RF and CT, the sooner the noise gain peaking starts and
therefore its contribution to the total output noise will be larger. It is obvious to note that it is advantageous to
minimize CIN by proper choice of op amp or by applying a reverse bias across the diode at the expense of
excess dark current and noise.
DIFFERENTIAL CABLE DRIVER FOR NTSC VIDEO
The LMH6619Q can be used to drive an NTSC video signal on a twisted-pair cable. Figure 12 shows the
schematic of a differential cable driver for NTSC video. This circuit can be used to transmit the signal from a
camera over a twisted pair to a monitor or display located a distance. C1 and C2 are used to AC couple the video
signal into the LMH6619Q. The two amplifiers of the LMH6619Q are set to a gain of 2 to compensate for the 75Ω
back termination resistors on the outputs. The LMH6619Q is set to a gain of 1. Because of the DC bias the
output of the LMH6619Q is AC coupled. Most monitors and displays will accept AC coupled inputs.
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+10V
+
C5
0.1 mF
C6
10 mF
+10V
+10V
GND
R
10 kW
GND
U1A
4
C
47 mF
2
C8
0.1 mF
+
C9
10 mF
8
J1
3
2
+
VIDEO
INPUT
+
+
V
1
R
16
R
10 kW
LMH6619Q
5
3.01 kW
GND
GND
R
10
75W
-
V
OUT
GND
C
47 mF
R
7
13
R
9
3.01 kW
GND
3.01 kW
U2
+
5
+
C
10
47 mF
4
TWISTED-PAIR
J2
-
R
1
75W
V
1
R
R
7
+
12
150W
VIDEO
OUTPUT
R
LMH6619Q
14
-
3.01 kW
3
C
1
47 mF
R
8
3 kW
3.01 kW
V
+
+
C3
2
+
20 mF
GND
GND
R
15
3.01 kW
GND
GND
R
11
75W
U1B
6
-
7
R
LMH6619Q
3
-
5
V
1.50 kW
V
OUT
GND
+
4
R
2
3.3 kW
C4
0.1 mF
GND
GND
+10V
R
10 kW
6
GND
Figure 12. Differential Cable Driver
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
LMH6619QMAK/NOPB
LMH6619QMAKE/NOPB
LMH6619QMAKX/NOPB
ACTIVE
SOIC
SOIC
SOIC
D
D
D
8
8
8
95
RoHS & Green
RoHS & Green
SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 105
-40 to 105
-40 to 105
LMH66
19QMA
ACTIVE
ACTIVE
250
SN
SN
LMH66
19QMA
2500 RoHS & Green
LMH66
19QMA
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LMH6619-Q1 :
Catalog: LMH6619
•
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
•
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LMH6619QMAKE/NOPB
LMH6619QMAKX/NOPB
SOIC
SOIC
D
D
8
8
250
178.0
330.0
12.4
12.4
6.5
6.5
5.4
5.4
2.0
2.0
8.0
8.0
12.0
12.0
Q1
Q1
2500
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LMH6619QMAKE/NOPB
LMH6619QMAKX/NOPB
SOIC
SOIC
D
D
8
8
250
208.0
367.0
191.0
367.0
35.0
35.0
2500
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
TUBE
*All dimensions are nominal
Device
Package Name Package Type
SOIC
Pins
SPQ
L (mm)
W (mm)
T (µm)
B (mm)
LMH6619QMAK/NOPB
D
8
95
495
8
4064
3.05
Pack Materials-Page 3
PACKAGE OUTLINE
D0008A
SOIC - 1.75 mm max height
SCALE 2.800
SMALL OUTLINE INTEGRATED CIRCUIT
C
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A
PIN 1 ID AREA
6X .050
[1.27]
8
1
2X
.189-.197
[4.81-5.00]
NOTE 3
.150
[3.81]
4X (0 -15 )
4
5
8X .012-.020
[0.31-0.51]
B
.150-.157
[3.81-3.98]
NOTE 4
.069 MAX
[1.75]
.010 [0.25]
C A B
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
[0.11-0.25]
0 - 8
.016-.050
[0.41-1.27]
DETAIL A
TYPICAL
(.041)
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
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EXAMPLE BOARD LAYOUT
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
SEE
DETAILS
1
8
8X (.024)
[0.6]
SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
EXPOSED
METAL
EXPOSED
METAL
.0028 MAX
[0.07]
.0028 MIN
[0.07]
ALL AROUND
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
1
8
8X (.024)
[0.6]
SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
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TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, regulatory or other requirements.
These resources are subject to change without notice. TI grants you permission to use these resources only for development of an
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