LMH6642MAEP [TI]
1 CHANNEL, VIDEO AMPLIFIER, PDSO5, PLASTIC, SOT-23, 5 PIN;
| 型号： | LMH6642MAEP |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 1 CHANNEL, VIDEO AMPLIFIER, PDSO5, PLASTIC, SOT-23, 5 PIN 放大器 |
| 文件： | 总32页 (文件大小：1568K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LMH6642, LMH6643, LMH6644
www.ti.com
SNOS966P –MAY 2001–REVISED MARCH 2013
LMH6642/LMH6643/LMH6644 Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers
Check for Samples: LMH6642, LMH6643, LMH6644
1
FEATURES
DESCRIPTION
The LMH664X family true single supply voltage
feedback amplifiers offer high speed (130MHz), low
distortion (−62dBc), and exceptionally high output
current (approximately 75mA) at low cost and with
reduced power consumption when compared against
existing devices with similar performance.
2
(VS = ±5V, TA = 25°C, RL = 2kΩ, AV = +1. Typical
Values Unless Specified).
•
•
•
•
•
•
•
−3dB BW (AV = +1) 130MHz
Supply Voltage Range 2.7V to 12.8V
Slew Rate (1), (AV = −1) 130V/µs
Input common mode voltage range extends to 0.5V
below V− and 1V from V+. Output voltage range
extends to within 40mV of either supply rail, allowing
wide dynamic range especially desirable in low
voltage applications. The output stage is capable of
approximately 75mA in order to drive heavy loads.
Fast output Slew Rate (130V/µs) ensures large peak-
to-peak output swings can be maintained even at
higher speeds, resulting in exceptional full power
bandwidth of 40MHz with a 3V supply. These
characteristics, along with low cost, are ideal features
Supply Current (no load) 2.7mA/amp
Output Short Circuit Current +115mA/−145mA
Linear Output Current ±75mA
Input Common Mode Volt. 0.5V Beyond V−, 1V
from V+
•
•
•
•
Output Voltage Swing 40mV from Rails
Input Voltage Noise (100kHz) 17nV/√Hz
Input Current Noise (100kHz) 0.9pA/√Hz
THD (5MHz, RL = 2kΩ, VO = 2VPP, AV = +2)
−62dBc
for
a
multitude of industrial and commercial
applications.
•
•
•
•
•
Settling Time 68ns
Careful attention has been paid to ensure device
stability under all operating voltages and modes. The
result is a very well behaved frequency response
characteristic (0.1dB gain flatness up the 12MHz
under 150Ω load and AV = +2) with minimal peaking
(typically 2dB maximum) for any gain setting and
under both heavy and light loads. This along with fast
settling time (68ns) and low distortion allows the
device to operate well in ADC buffer, and high
frequency filter applications as well as other
applications.
Fully Characterized for 3V, 5V, and ±5V
Overdrive Recovery 100ns
(2)
Output Short Circuit Protected
No Output Phase Reversal with CMVR
Exceeded
APPLICATIONS
•
•
•
•
•
Active Filters
CD/DVD ROM
This device family offers professional quality video
performance with low DG (0.01%) and DP (0.01°)
characteristics. Differential Gain and Differential
Phase characteristics are also well maintained under
heavy loads (150Ω) and throughout the output
voltage range. The LMH664X family is offered in
single (LMH6642), dual (LMH6643), and quad
(LMH6644) options.
ADC Buffer Amp
Portable Video
Current Sense Buffer
(1) Slew rate is the average of the rising and falling slew rates.
(2) Output short circuit duration is infinite for VS < 6V at room
temperature and below. For VS > 6V, allowable short circuit
duration is 1.5ms.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2001–2013, Texas Instruments Incorporated
LMH6642, LMH6643, LMH6644
SNOS966P –MAY 2001–REVISED MARCH 2013
www.ti.com
Closed Loop Gain vs. Frequency for Various Gain
Large Signal Frequency Response
8.0
6.0
4.0
2.0
0.0
+3
+2
+1
0
±2.5V
V
= ±1.5V
= 2k
S
A
V
= +1
2V
PP
R
L
±5V
V
= 0.2V
PP
OUT
4V
PP
-1
-2
-3
A
V
= +10
A
= +5
V
A
= +2
V
R
= R = 2k
L
F
A
= +2
V
100k
1M
10M
200M
10k
100k
1M
10M
100M 500M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 1.
Figure 2.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
(1)(2)
Absolute Maximum Ratings
(3)
ESD Tolerance
2KV
200V
(4)
(5)
1000V
VIN Differential
±2.5V
(6) (7)
Output Short Circuit Duration
Supply Voltage (V+ - V−)
Voltage at Input/Output pins
Input Current
See
,
13.5V
V+ +0.8V, V− −0.8V
±10mA
Storage Temperature Range
−65°C to +150°C
+150°C
(8)
Junction Temperature
Soldering Information
Infrared or Convection Reflow (20 sec)
Wave Soldering Lead Temp.(10 sec)
235°C
260°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(3) Human body model, 1.5kΩ in series with 100pF.
(4) Machine Model, 0Ω in series with 200pF.
(5) CDM: Charge Device Model
(6) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
(7) Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
(8) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
2
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Copyright © 2001–2013, Texas Instruments Incorporated
Product Folder Links: LMH6642 LMH6643 LMH6644
LMH6642, LMH6643, LMH6644
www.ti.com
SNOS966P –MAY 2001–REVISED MARCH 2013
(1)
Operating Ratings
Supply Voltage (V+ – V−)
2.7V to 12.8V
−40°C to +85°C
265°C/W
(2)
Junction Temperature Range
Package Thermal Resistance (2) (θJA
)
5-Pin SOT-23
8-Pin SOIC
190°C/W
8-Pin VSSOP
14-Pin SOIC
14- Pin TSSOP
235°C/W
145°C/W
155°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
(2) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
3V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 3V, V− = 0V, VCM = VO = V+/2, VID (input differential
voltage) as noted (where applicable) and RL = 2kΩ to V+/2. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(1)
(2)
(1)
BW
−3dB BW
AV = +1, VOUT = 200mVPP
80
115
46
MHz
MHz
AV = +2, −1, VOUT = 200mVPP
BW0.1dB
0.1dB Gain Flatness
AV = +2, RL = 150Ω to V+/2,
RL = 402Ω, VOUT = 200mVPP
19
PBW
en
Full Power Bandwidth
AV = +1, −1dB, VOUT = 1VPP
f = 100kHz
40
17
MHz
Input-Referred Voltage Noise
nV/√Hz
f = 1kHz
48
in
Input-Referred Current Noise
f = 100kHz
0.90
3.3
−48
pA/√Hz
f = 1kHz
THD
DG
Total Harmonic Distortion
Differential Gain
f = 5MHz, VO = 2VPP, AV = −1,
RL = 100Ω to V+/2
dBc
VCM = 1V, NTSC, AV = +2
0.17
RL =150Ω to V+/2
%
RL =1kΩ to V+/2
0.03
0.05
DP
Differential Phase
VCM = 1V, NTSC, AV = +2
RL =150Ω to V+/2
deg
RL =1kΩ to V+/2
0.03
47
CT Rej.
TS
Cross-Talk Rejection
Settling Time
f = 5MHz, Receiver:
Rf = Rg = 510Ω, AV = +2
dB
ns
VO = 2VPP, ±0.1%, 8pF Load,
VS = 5V
68
(3)
SR
Slew Rate
AV = −1, VI = 2VPP
90
120
±1
V/µs
VOS
Input Offset Voltage
For LMH6642 and LMH6644
±5
±7
mV
For LMH6643
±1
±3.4
±7
(4)
TC VOS
IB
Input Offset Average Drift
Input Bias Current
See
±5
µV/°C
µA
(5)
See
−1.50
−2.60
−3.25
IOS
RIN
Input Offset Current
20
3
800
1000
nA
Common Mode Input Resistance
MΩ
(1) All limits are guaranteed by testing or statistical analysis.
(2) Typical values represent the most likely parametric norm.
(3) Slew rate is the average of the rising and falling slew rates.
(4) Offset voltage average drift determined by dividing the change in VOS at temperature extremes by the total temperature change.
(5) Positive current corresponds to current flowing into the device.
Copyright © 2001–2013, Texas Instruments Incorporated
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3
Product Folder Links: LMH6642 LMH6643 LMH6644
LMH6642, LMH6643, LMH6644
SNOS966P –MAY 2001–REVISED MARCH 2013
www.ti.com
3V Electrical Characteristics (continued)
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 3V, V− = 0V, VCM = VO = V+/2, VID (input differential
voltage) as noted (where applicable) and RL = 2kΩ to V+/2. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(1)
(2)
(1)
CIN
Common Mode Input
Capacitance
2
pF
CMVR
Input Common-Mode Voltage
Range
CMRR ≥ 50dB
−0.5
2.0
−0.2
−0.1
V
1.8
1.6
CMRR
AVOL
Common Mode Rejection Ratio
Large Signal Voltage Gain
VCM Stepped from 0V to 1.5V
72
95
96
dB
dB
VO = 0.5V to 2.5V
80
75
RL = 2kΩ to V+/2
VO = 0.5V to 2.5V
74
70
82
RL = 150Ω to V+/2
VO
Output Swing
High
RL = 2kΩ to V+/2, VID = 200mV
RL = 150Ω to V+/2, VID = 200mV
RL = 2kΩ to V+/2, VID = −200mV
RL = 150Ω to V+/2, VID = −200mV
Sourcing to V+/2
2.90
2.80
2.98
2.93
25
V
Output Swing
Low
75
mV
75
150
ISC
Output Short Circuit Current
50
35
95
(6)
VID = 200mV
mA
Sinking to V+/2
VID = −200mV
55
40
110
(6)
IOUT
Output Current
VOUT = 0.5V from either supply
±65
85
mA
dB
+PSRR
Positive Power Supply Rejection V+ = 3.0V to 3.5V, VCM = 1.5V
Ratio
75
IS
Supply Current (per channel)
No Load
2.70
4.00
4.50
mA
(6) Short circuit test is a momentary test. See Note 7 under 5V Electrical Characteristics.
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, VID (input differential
voltage) as noted (where applicable) and RL = 2kΩ to V+/2. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(1)
(2)
(1)
BW
−3dB BW
AV = +1, VOUT = 200mVPP
90
120
46
MHz
MHz
AV = +2, −1, VOUT = 200mVPP
BW0.1dB
0.1dB Gain Flatness
AV = +2, RL = 150Ω to V+/2,
Rf = 402Ω, VOUT = 200mVPP
15
PBW
en
Full Power Bandwidth
AV = +1, −1dB, VOUT = 2VPP
f = 100kHz
22
17
MHz
Input-Referred Voltage Noise
nV/√Hz
f = 1kHz
48
in
Input-Referred Current Noise
f = 100kHz
0.90
3.3
pA/√Hz
f = 1kHz
THD
DG
Total Harmonic Distortion
Differential Gain
f = 5MHz, VO = 2VPP, AV = +2
−60
0.16
dBc
NTSC, AV = +2
RL =150Ω to V+/2
%
RL = 1kΩ to V+/2
0.05
0.05
DP
Differential Phase
NTSC, AV = +2
RL = 150Ω to V+/2
deg
RL = 1kΩ to V+/2
0.01
(1) All limits are guaranteed by testing or statistical analysis.
(2) Typical values represent the most likely parametric norm.
4
Submit Documentation Feedback
Copyright © 2001–2013, Texas Instruments Incorporated
Product Folder Links: LMH6642 LMH6643 LMH6644
LMH6642, LMH6643, LMH6644
www.ti.com
SNOS966P –MAY 2001–REVISED MARCH 2013
5V Electrical Characteristics (continued)
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, VID (input differential
voltage) as noted (where applicable) and RL = 2kΩ to V+/2. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(1)
(2)
(1)
CT Rej.
Cross-Talk Rejection
Settling Time
f = 5MHz, Receiver:
Rf = Rg = 510Ω, AV = +2
47
dB
TS
VO = 2VPP, ±0.1%, 8pF Load
AV = −1, VI = 2VPP
68
125
±1
ns
(3)
SR
VOS
Slew Rate
95
V/µs
Input Offset Voltage
For LMH6642 and LMH6644
±5
±7
mV
For LMH6643
±1
±3.4
±7
(4)
TC VOS
IB
Input Offset Average Drift
Input Bias Current
See
±5
µV/°C
µA
(5)
See
−1.70
−2.60
−3.25
IOS
Input Offset Current
20
800
1000
nA
RIN
CIN
Common Mode Input Resistance
3
2
MΩ
Common Mode Input
Capacitance
pF
CMVR
Input Common-Mode Voltage
Range
CMRR ≥ 50dB
−0.5
−0.2
−0.1
V
3.8
4.0
3.6
CMRR
AVOL
Common Mode Rejection Ratio
Large Signal Voltage Gain
VCM Stepped from 0V to 3.5V
72
95
98
dB
dB
VO = 0.5V to 4.50V
86
82
RL = 2kΩ to V+/2
VO = 0.5V to 4.25V
76
72
82
RL = 150Ω to V+/2
VO
Output Swing
High
RL = 2kΩ to V+/2, VID = 200mV
RL = 150Ω to V+/2, VID = 200mV
RL = 2kΩ to V+/2, VID = −200mV
RL = 150Ω to V+/2, VID = −200mV
Sourcing to V+/2
4.90
4.65
4.98
4.90
25
V
Output Swing
Low
100
150
mV
100
115
ISC
Output Short Circuit Current
55
40
(6)(7)
VID = 200mV
mA
Sinking to V+/2
VID = −200mV
70
55
140
(6)(7)
IOUT
Output Current
Positive Power Supply Rejection V+ = 4.0V to 6V
Ratio
VO = 0.5V from either supply
±70
90
mA
dB
+PSRR
79
IS
Supply Current (per channel)
No Load
2.70
4.25
5.00
mA
(3) Slew rate is the average of the rising and falling slew rates.
(4) Offset voltage average drift determined by dividing the change in VOS at temperature extremes by the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) Short circuit test is a momentary test. See Note 7.
(7) Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
Copyright © 2001–2013, Texas Instruments Incorporated
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Product Folder Links: LMH6642 LMH6643 LMH6644
LMH6642, LMH6643, LMH6644
SNOS966P –MAY 2001–REVISED MARCH 2013
www.ti.com
±5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = −5V, VCM = VO = 0V, VID (input differential
voltage) as noted (where applicable) and RL = 2kΩ to ground. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(1)
(2)
(1)
BW
−3dB BW
AV = +1, VOUT = 200mVPP
95
130
46
MHz
MHz
AV = +2, −1, VOUT = 200mVPP
BW0.1dB
0.1dB Gain Flatness
AV = +2, RL = 150Ω to V+/2,
Rf = 806Ω, VOUT = 200mVPP
12
PBW
en
Full Power Bandwidth
AV = +1, −1dB, VOUT = 2VPP
f = 100kHz
24
17
MHz
Input-Referred Voltage Noise
nV/√Hz
f = 1kHz
48
in
Input-Referred Current Noise
f = 100kHz
0.90
3.3
pA/√Hz
f = 1kHz
THD
DG
Total Harmonic Distortion
Differential Gain
f = 5MHz, VO = 2VPP, AV = +2
−62
0.15
dBc
NTSC, AV = +2
RL = 150Ω to V+/2
%
RL = 1kΩ to V+/2
0.01
0.04
DP
Differential Phase
NTSC, AV = +2
RL = 150Ω to V+/2
deg
RL = 1kΩ to V+/2
0.01
47
CT Rej.
TS
Cross-Talk Rejection
Settling Time
f = 5MHz, Receiver:
Rf = Rg = 510Ω, AV = +2
dB
ns
VO = 2VPP, ±0.1%, 8pF Load,
VS = 5V
68
(3)
SR
Slew Rate
AV = −1, VI = 2VPP
100
135
±1
V/µs
mV
VOS
Input Offset Voltage
For LMH6642 and LMH6644
±5
±7
For LMH6643
±1
±3.4
±7
(4)
TC VOS
IB
Input Offset Average Drift
Input Bias Current
See
±5
µV/°C
µA
(5)
See
−1.60
−2.60
−3.25
IOS
Input Offset Current
20
800
1000
nA
RIN
CIN
Common Mode Input Resistance
3
2
MΩ
Common Mode Input
Capacitance
pF
CMVR
Input Common-Mode Voltage
Range
CMRR ≥ 50dB
−5.5
−5.2
−5.1
V
3.8
4.0
3.6
CMRR
AVOL
Common Mode Rejection Ratio
Large Signal Voltage Gain
VCM Stepped from −5V to 3.5V
74
95
96
dB
dB
VO = −4.5V to 4.5V,
RL = 2kΩ
88
84
VO = −4.0V to 4.0V,
RL = 150Ω
78
74
82
VO
Output Swing
High
RL = 2kΩ, VID = 200mV
RL = 150Ω, VID = 200mV
RL = 2kΩ, VID = −200mV
RL = 150Ω, VID = −200mV
4.90
4.65
4.96
4.80
V
V
Output Swing
Low
−4.96
−4.80
−4.90
−4.65
(1) All limits are guaranteed by testing or statistical analysis.
(2) Typical values represent the most likely parametric norm.
(3) Slew rate is the average of the rising and falling slew rates.
(4) Offset voltage average drift determined by dividing the change in VOS at temperature extremes by the total temperature change.
(5) Positive current corresponds to current flowing into the device.
6
Submit Documentation Feedback
Copyright © 2001–2013, Texas Instruments Incorporated
Product Folder Links: LMH6642 LMH6643 LMH6644
LMH6642, LMH6643, LMH6644
www.ti.com
SNOS966P –MAY 2001–REVISED MARCH 2013
±5V Electrical Characteristics (continued)
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = −5V, VCM = VO = 0V, VID (input differential
voltage) as noted (where applicable) and RL = 2kΩ to ground. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(1)
(2)
(1)
ISC
Output Short Circuit Current
Sourcing to Ground
VID = 200mV
60
35
115
145
(6)(7)
mA
Sinking to Ground
85
65
(6)(7)
VID = −200mV
IOUT
Output Current
VO = 0.5V from either supply
(V+, V−) = (4.5V, −4.5V) to (5.5V,
−5.5V)
±75
78
mA
dB
PSRR
Power Supply Rejection Ratio
90
IS
Supply Current (per channel)
No Load
2.70
4.50
5.50
mA
(6) Short circuit test is a momentary test. See Note 7.
(7) Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
Connection Diagram
1
2
8
+
5
1
V
N/C
N/C
OUTPUT
+
7
V
-
-IN
-
2
V
6
5
3
4
OUTPUT
N/C
+
+IN
-
+
4
3
-IN
+IN
-
V
Figure 3. 5-Pin SOT-23 (LMH6642)
Top View
Figure 4. 8-Pin SOIC (LMH6642)
Top View
Package Number DBV0005A
Package Number D0008A
1
8
+
OUT A
V
A
-
+
2
3
4
7
6
5
-IN A
+IN A
OUT B
-IN B
B
+
-
-
+IN B
V
Figure 5. SOIC and VSSOP 8-Pin
(LMH6643)
Figure 6. 14-Pin SOIC and 14-Pin TSSOP
(LMH6644)
Top View
Top View
Package Number DGK0008A
Package Numbers D0014A, PW0014A
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SNOS966P –MAY 2001–REVISED MARCH 2013
www.ti.com
Typical Performance Characteristics
At TJ = 25°C, V+ = +5, V− = −5V, RF = RL = 2kΩ. Unless otherwise specified.
Closed Loop Frequency Response for Various Supplies
Closed Loop Gain vs. Frequency for Various Gain
+3
+2
+1
0
V
S
= ±1.5V
V
= ±5V
= 2k
S
R
L
0
-1
-2
-3
V
= ±2.5V
V
= 0.2V
OUT PP
S
V
S
= ±5V
-1
-2
-3
A
= +10
V
V
= ±1.5V
S
A
= +5
V
V
= ±2.5V
S
A
= +2
V
V
S
= ±5V
A
= +1
= 2k
V
R
L
A
= +1
V
V
= 0.2V
OUT
PP
500
M
100k
1M
10M
200M
100k
1M
10M
100M
10k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 7.
Figure 8.
Closed Loop Gain vs. Frequency for Various Gain
Closed Loop Frequency Response for Various Temperature
+3
85°C
V
= ±1.5V
= 2k
S
A
V
= +1
0
+2
+1
0
-40°C
R
L
-2
V
= 0.2V
PP
OUT
25°C
-4
-6
-1
-2
-3
A
V
= +10
V
= ±1.5V
= 2k
S
A
= +5
V
R
L
A
V
= +1
V
O
= 0.2V
PP
A
= +2
V
10k
100k
1M
10M
100M 500M
10k
100k
1M
10M
100M 500M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 9.
Figure 10.
Closed Loop Gain
vs.
Frequency for Various Supplies
Closed Loop Frequency Response for Various Temperature
±1.5V
±2.5V
85°C
7.0
6.5
6.0
5.5
5.0
0
-2
25°C
-4
±5V
A
= +2
V
V
= ±5V
= 2k
S
R
R
= 2k
-40°C
F
L
R
L
= 150
= 0.2V
A
V
= +1
V
V
O
PP
= 0.2V
PP
OUT
100k
1M
10M
200M
10k
100k
10M
100M 500M
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 11.
Figure 12.
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SNOS966P –MAY 2001–REVISED MARCH 2013
Typical Performance Characteristics (continued)
At TJ = 25°C, V+ = +5, V− = −5V, RF = RL = 2kΩ. Unless otherwise specified.
Closed Loop Small Signal Frequency Response for Various
Large Signal Frequency Response
Supplies
8.0
8.0
6.0
4.0
2.0
0.0
±1.5V
±2.5V
6.0
2V
PP
±5V
4V
4.0
2.0
0.0
±5
V
PP
±2.5V
V
A
= 0.2V
= +2
O
V
PP
A
= +2
V
R
F
= R = 2k
L
R
= R = 2k
L
F
1M
10M
200M
100k
100k
1M
10M
200M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 13.
Figure 14.
Closed Loop Frequency Response for Various Supplies
±0.1dB Gain Flatness for Various Supplies
±5V
6
±1.5V
±2.5V
4
2
0
±1.5V
±2.5V
+0.3
+0.2
+0.1
0
±5V
GAIN
+25
-20
-0.1
±5V
PHASE
V
A
= 0.4V
= +2
O
PP
-65
V
A
= 0.4V
= +2
O
V
PP
V
-110
-155
R
R
= 806W
= 150W
F
L
±2.5V
±1.5V
R
= 806W
F
R = 150W
L
100K
1M
10M
200M
100K
1M
10M
200M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 15.
Figure 16.
VOUT (VPP) for THD < 0.5%
VOUT (VPP) for THD < 0.5%
3
5
4
R
= 2k
L
R
L
= 100W
2
1
3
2
V
A
= 5V
S
V
= -1
1
Rf = 2k
V
A
= 3V
= -1
S
R
= 2K to V /2
S
L
V
0
0
100k
1M
10M
100M
100K
1M
10M
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 17.
Figure 18.
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Typical Performance Characteristics (continued)
At TJ = 25°C, V+ = +5, V− = −5V, RF = RL = 2kΩ. Unless otherwise specified.
VOUT (VPP) for THD < 0.5%
Open Loop Gain/Phase for Various Temperature
80
60
40
20
0
10
9
8
7
6
5
4
3
2
1
0
85°C
R
2K
=
L
PHASE
GAIN
60
40
20
0
-40°C
R
L
= 100W
V
= ±1.5V
S
V
A
= ±5V
= -1
S
V
25°C
R = 2k
L
-20
10k
100k
1M
10M
150M
100k
1M
10M
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 19.
Figure 20.
Open Loop Gain/Phase for Various Temperature
HD2 (dBc) vs. Output Swing
80
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
85°C
GAIN
60
PHASE
5MHz
40
60
40
20
25°C
20
0
10MHz
V
A
= 5V
S
V
0
V
= ±5V
= 2k
S
= -1
-40°C
10M
R
L
R
= 2k to V /2
S
L
-20
10k
100k
1M
150M
0
1
2
3
4
5
FREQUENCY (Hz)
V
(VPP)
OUT
Figure 21.
Figure 22.
HD3 (dBc) vs. Output Swing
HD2 vs. Output Swing
-90
-80
-70
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
100W,1MHz
100W, 5MHz
2kW, 5MHz
5MHz
-60
-50
-40
2kW, 10MHz
100W, 10MHz
V
A
= 5V
S
10MHz
= -1
V
= 5V, A = +2
S V
V
-30
-20
R
= 2k to V /2
S
R
L
= 2kW & 100W to V /2
L
S
0.0
1.0
2.0
3.0
(V
4.0
5.0
0
1
2
3
4
5
V
)
OUT PP
V
(V )
OUT PP
Figure 23.
Figure 24.
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SNOS966P –MAY 2001–REVISED MARCH 2013
Typical Performance Characteristics (continued)
At TJ = 25°C, V+ = +5, V− = −5V, RF = RL = 2kΩ. Unless otherwise specified.
HD3 vs. Output Swing
THD (dBc) vs. Output Swing
-90
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
R
= 2k TO V /2
S
L
S
V
-80
V
A
= 5V
= -1
100W,1MHz
-70
2kW,5MHz
-60
5MHz
2kW,10MHz
-50
100W,
5MHz
-40
10MHz
V
= 5V, A = +2
V
-30
-20
S
R
= 2kW &100W to V /2
100W, 10MHz
L
S
0.0
1.0
2.0
3.0
(V
4.0
5.0
0
1
2
3
4
5
V
)
V
(V )
OUT
PP
OUT PP
Figure 25.
Figure 26.
Settling Time vs. Input Step Amplitude (Output Slew and
Settle Time)
Input Noise vs. Frequency
1k
100
10
100
10
1
80
70
60
50
40
30
VOLTAGE
CURRENT
V
A
= 5V
= -1
S
V
20
10
0
R = R = 2k
f
L
C
= 8pF
L
0.1
1
10
100
1K
10K
100K
1M
2
0.5
1
1.5
FREQUENCY (Hz)
INPUT STEP AMPLITUDE (V
)
PP
Figure 27.
Figure 28.
VOUT from V+ vs. ISOURCE
VOUT from V− vs. ISINK
10
10
1
VS=±1.5V
V
= ±1.5V
S
1
0.1
85°C
85°C
25°C
0.1
0.01
-40°C
(mA)
-40°C
25°C
0.01
1
10
I
100
(mA)
1k
1
10
100
1K
I
SOURCE
SINK
Figure 29.
Figure 30.
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Typical Performance Characteristics (continued)
At TJ = 25°C, V+ = +5, V− = −5V, RF = RL = 2kΩ. Unless otherwise specified.
VOUT from V+ vs. ISOURCE
VOUT from V− vs. ISINK
= ±5V
10
10
1
V
V
S
= ±5V
S
85°C
-40°C
25°C
1
0.1
85°
C
85°C
0.1
0.01
-40°C
100
-40°C
100
25°C
0.01
1
10
1k
1
10
1k
I
(mA)
I
(mA)
SINK
SOURCE
Figure 31.
Swing vs. VS
Figure 32.
Short Circuit Current (to VS/2) vs. VS
180
160
160
140
120
100
80
85°C, Sink
-40°C, Sink
R
= 150W
L
85°C, Sourcing
25°C, Sink
25°C, Sourcing
140
120
-40°C, Sourcing
100
80
60
40
20
0
25°C, Source
85°C, Source
60
40
20
85°C, Sinking
-40°C, Source
25°C, Sinking
-40°C, Sinking
2
3
4
5
6
7
8
9
10
2
3
4
5
6
7
8
9
10
V
(V)
S
V (V)
S
Figure 33.
Figure 34.
Output Sinking Saturation Voltage vs. IOUT
Output Sourcing Saturation Voltage vs. IOUT
1
1
V
= ±2.5
S
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V = ±2.5V
S
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
85°C
25°C
85°C
25°C
-40°C
-40°C
0
20
40
60
(mA)
80
100
120
0
20
40
60
80
(mA)
100 120
I
SINK
I
SOURCING
Figure 35.
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Figure 36.
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SNOS966P –MAY 2001–REVISED MARCH 2013
Typical Performance Characteristics (continued)
At TJ = 25°C, V+ = +5, V− = −5V, RF = RL = 2kΩ. Unless otherwise specified.
Closed Loop Output Impedance vs. Frequency AV = +1
PSRR vs. Frequency
1000
90
80
70
60
50
40
30
20
10
0
V
A
= 5V
A
= +1
S
V
= +10
V
100
+ PSRR
10
1
- PSRR
0.1
0.01
1k
100k
1M
10M
100M
10k
10k
100k
1M
10M
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 37.
Figure 38.
CMRR vs. Frequency
Crosstalk Rejection vs. Frequency (Output to Output)
100
90
100
90
80
80
70
60
50
70
60
50
40
V
A
= 5V
= +6
S
V
40
30
Receive CH.: A = +2, Rf = Rg = 510
V
30
100
1k
10k
100k
1M
10M
1k
10k
100k
1M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 39.
Figure 40.
VOS vs. VOUT (Typical Unit)
= 5V
VOS vs. VCM (Typical Unit)
2
1
0.8
0.6
0.4
0.2
0
V
S
= 10V
V
S
1.5
1.0
0.5
0
R
L
= 150W to V+/2
85°C
85°C
25°C
-0.2
-0.4
-0.6
-0.8
-1
-0.5
-1
25°C
-40°C
-1.5
-40°C
-2
-2
0
2
4
6
8
10
0
1
2
3
4
5
V
CM
(V)
V
(V)
OUT
Figure 41.
Figure 42.
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Typical Performance Characteristics (continued)
At TJ = 25°C, V+ = +5, V− = −5V, RF = RL = 2kΩ. Unless otherwise specified.
VOS vs. VS (for 3 Representative Units)
VOS vs. VS (for 3 Representative Units)
1
1
-40°C
0.8
0.8
0.6
0.4
0.2
0
Unit #1
Unit #1
0.6
25°C
0.4
0.2
0
Unit #2
Unit #3
-0.2
-0.2
-0.4
-0.6
-0.8
-1
Unit #2
-0.4
-0.6
Unit #3
-0.8
-1
3
5
9
2
4
6
8
10
12
2
4
6
7
8
10 11
V
S
(V)
V
S
(V)
Figure 43.
Figure 44.
IB vs. VS
VOS vs. VS (for 3 Representative Units)
-1000
-1100
-1200
-1300
-1400
-1500
-1600
1
0.8
0.6
0.4
0.2
0
85°C
Unit #1
-40°C
25°C
Unit #2
Unit #3
-0.2
-0.4
-0.6
-0.8
-1
85°C
-1700
-1800
-1900
2
4
6
8
10
12
2
3
4
5
6
7
8
9
10 12
V
(V)
S
V
(V)
S
Figure 45.
IOS vs. VS
Figure 46.
IS vs. VCM
50
45
40
35
30
25
20
15
10
5
4
3.5
3
V
S
= 10V
85°C
2.5
2
25°C
-40°C
-40°C
1.5
1
0.5
0
25°C
85°C
0
-0.5
2
4
6
8
10
12
-2
0
2
4
6
8
10
V
(V)
CM
V
(V)
S
Figure 47.
Figure 48.
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SNOS966P –MAY 2001–REVISED MARCH 2013
Typical Performance Characteristics (continued)
At TJ = 25°C, V+ = +5, V− = −5V, RF = RL = 2kΩ. Unless otherwise specified.
IS vs. VS
Small Signal Step Response
4
V
V
= 3V
S
= 100mV
O
PP
85°C
R
L
= 2k to V /2
S
A
V
= -1
3
25°C
2
1
-40°C
40 mV/DIV
20 ns/DIV
2
4
6
8
10
12
V
(V)
S
Figure 49.
Figure 50.
Large Signal Step Response
Large Signal Step Response
= +2
A
V
V
V
= ±5V
S
= 8V
O
PP
R = 2k
L
A
= +1
V
V =±1.5V
S
V
=2V
O PP
A = -1
V
R =2k
L
400 mV/DIV
40.0 nS/DIV
4 /DIV
200.0 ns/DIV
Figure 51.
Figure 52.
Small Signal Step Response
= 3V
Small Signal Step Response
V
S
V
S
V
O
A
V
= ±5V
V
= 100mV
PP
O
= 100mV
PP
R = 2k to V /2
L
S
= +1, R = 2k
L
A
= +1
V
40 mV/DIV
10 ns/DIV
40 mV/DIV
10.0 ns/DIV
Figure 53.
Figure 54.
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Typical Performance Characteristics (continued)
At TJ = 25°C, V+ = +5, V− = −5V, RF = RL = 2kΩ. Unless otherwise specified.
Small Signal Step Response
Small Signal Step Response
V
V
= ±5V
= 100mV
= 2k
S
VS = ±5V
VO = 200mVPP
AV = +2,
O
PP
R
L
RL = 2k
A
= -1
V
40 mV/DIV
20 ns/DIV
20.0 ns/DIV
40 mV/DIV
Figure 55.
Figure 56.
Large Signal Step Response
Large Signal Step Response
V
V
= ±5V
S
V
V
A
= ±5V
S
O
V
= 2V
= 2k
= -1
O
PP
= 8V
= +2
= 2k
PP
R
L
A
V
R
L
2 V/DIV
40.0 ns/DIV
400 mV/DIV
20 ns/DIV
Figure 57.
Figure 58.
Large Signal Step Response
A
V
= -1
V
R
= ±5V
V
S
= 8V
PP
= 2KW
OUT
L
2 V/DIV
100 ns/DIV
Figure 59.
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SNOS966P –MAY 2001–REVISED MARCH 2013
APPLICATION INFORMATION
CIRCUIT DESCRIPTION
The LMH664X family is based on proprietary VIP10 dielectrically isolated bipolar process.
This device family architecture features the following:
•
•
•
Complimentary bipolar devices with exceptionally high ft (∼8GHz) even under low supply voltage (2.7V) and
low bias current.
A class A-B “turn-around” stage with improved noise, offset, and reduced power dissipation compared to
similar speed devices (patent pending).
Common Emitter push-push output stage capable of 75mA output current (at 0.5V from the supply rails) while
consuming only 2.7mA of total supply current per channel. This architecture allows output to reach within
milli-volts of either supply rail.
•
•
Consistent performance over the entire operating supply voltage range with little variation for the most
important specifications (e.g. BW, SR, IOUT, etc.)
Significant power saving (∼40%) compared to competitive devices on the market with similar performance.
Application Hints
This Op Amp family is a drop-in replacement for the AD805X family of high speed Op Amps in most applications.
In addition, the LMH664X will typically save about 40% on power dissipation, due to lower supply current, when
compared to competition. All AD805X family’s guaranteed parameters are included in the list of LMH664X
guaranteed specifications in order to ensure equal or better level of performance. However, as in most high
performance parts, due to subtleties of applications, it is strongly recommended that the performance of the part
to be evaluated is tested under actual operating conditions to ensure full compliance to all specifications.
With 3V supplies and a common mode input voltage range that extends 0.5V below V−, the LMH664X find
applications in low voltage/low power applications. Even with 3V supplies, the −3dB BW (@ AV = +1) is typically
115MHz with a tested limit of 80MHz. Production testing guarantees that process variations with not compromise
speed. High frequency response is exceptionally stable confining the typical −3dB BW over the industrial
temperature range to ±2.5%.
As can be seen from the typical performance plots, the LMH664X output current capability (∼75mA) is enhanced
compared to AD805X. This enhancement, increases the output load range, adding to the LMH664X’s versatility.
Because of the LMH664X’s high output current capability attention should be given to device junction
temperature in order not to exceed the Absolute Maximum Rating.
This device family was designed to avoid output phase reversal. With input overdrive, the output is kept near
supply rail (or as closed to it as mandated by the closed loop gain setting and the input voltage). See Figure 60:
Input
Output
+
V
-
V
V
A
= ±2.5V
= +1
S
V
1V/DIV
200 ns/DIV
Figure 60. Input and Output Shown with CMVR Exceeded
However, if the input voltage range of −0.5V to 1V from V+ is exceeded by more than a diode drop, the internal
ESD protection diodes will start to conduct. The current in the diodes should be kept at or below 10mA.
Output overdrive recovery time is less than 100ns as can be seen from Figure 61 plot:
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V
IN
(1 V/DIV)
V
A
=±5V, V =5V
IN
S
PP
V
OUT
(2 V/DIV)
100 ns/DIV
=+5, R =R =2k
V
F
L
2 V/DIV
Figure 61. Overload Recovery Waveform
INPUT AND OUTPUT TOPOLOGY
All input / output pins are protected against excessive voltages by ESD diodes connected to V+ and V-rails (see
Figure 62). These diodes start conducting when the input / output pin voltage approaches 1Vbe beyond V+ or V-
to protect against over voltage. These diodes are normally reverse biased. Further protection of the inputs is
provided by the two resistors (R in Figure 62), in conjunction with the string of anti-parallel diodes connected
between both bases of the input stage. The combination of these resistors and diodes reduces excessive
differential input voltages approaching 2Vbe. The most common situation when this occurs is when the device is
used as a comparator (or with little or no feedback) and the device inputs no longer follow each other. In such a
case, the diodes may conduct. As a consequence, input current increases and the differential input voltage is
clamped. It is important to make sure that the subsequent current flow through the device input pins does not
violate the Absolute Maximum Ratings of the device. To limit the current through this protection circuit, extra
series resistors can be placed. Together with the built-in series resistors of several hundred ohms, these external
resistors can limit the input current to a safe number (i.e. < 10mA). Be aware that these input series resistors
may impact the switching speed of the device and could slow down the device.
V+
V+
V+
R
R
IN-
IN+
V-
V-
Figure 62. Input Equivalent Circuit
SINGLE SUPPLY, LOW POWER PHOTODIODE AMPLIFIER
The circuit shown in Figure 63 is used to amplify the current from a photodiode into a voltage output. In this
circuit, the emphasis is on achieving high bandwidth and the transimpedance gain setting is kept relatively low.
Because of its high slew rate limit and high speed, the LMH664X family lends itself well to such an application.
This circuit achieves approximately 1V/mA of transimpedance gain and capable of handling up to 1mApp from the
photodiode. Q1, in a common base configuration, isolates the high capacitance of the photodiode (Cd) from the
Op Amp input in order to maximize speed. Input is AC coupled through C1 to ease biasing and allow single
supply operation. With 5V single supply, the device input/output is shifted to near half supply using a voltage
divider from VCC. Note that Q1 collector does not have any voltage swing and the Miller effect is minimized. D1,
tied to Q1 base, is for temperature compensation of Q1’s bias point. Q1 collector current was set to be large
enough to handle the peak-to-peak photodiode excitation and not too large to shift the U1 output too far from
mid-supply.
18
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Product Folder Links: LMH6642 LMH6643 LMH6644
LMH6642, LMH6643, LMH6644
www.ti.com
SNOS966P –MAY 2001–REVISED MARCH 2013
No matter how low an Rf is selected, there is a need for Cf in order to stabilize the circuit. The reason for this is
that the Op Amp input capacitance and Q1 equivalent collector capacitance together (CIN) will cause additional
phase shift to the signal fed back to the inverting node. Cf will function as a zero in the feedback path counter-
acting the effect of the CIN and acting to stabilized the circuit. By proper selection of Cf such that the Op Amp
open loop gain is equal to the inverse of the feedback factor at that frequency, the response is optimized with a
theoretical 45° phase margin.
CF =
SQRT (CIN)/(2p ∂ GBWP ∂ RF)
ꢀ
(1)
where GBWP is the Gain Bandwidth Product of the Op Amp
Optimized as such, the I-V converter will have a theoretical pole, fp, at:
fP =
SQRT GBWP/(2pRF ∂ CIN)
(2)
With Op Amp input capacitance of 3pF and an estimate for Q1 output capacitance of about 3pF as well, CIN
=
6pF. From the typical performance plots, LMH6642/6643 family GBWP is approximately 57MHz. Therefore, with
Rf = 1k, from Equation 1 and Equation 2 above.
Cf = ∼4.1pF and fp = 39MHz
C
f
5pF
Photodiode
Equivalent
Circuit
V
bias
R
f
1kW
V
+5V
=
R
CC
bias
C
C1
100nF
Q1
2N3904
-1mA
PP
-
V
out
d
R2
R
d
Photodiode
1.8kW
10
-
200pF
x
R5
510W
+
ı100kW
I
d
R11
D1
1N4148
910
W
R10
1kW
R3
1kW
+5V
Figure 63. Single Supply Photodiode I-V Converter
For this example, optimum Cf was empirically determined to be around 5pF. This time domain response is shown
in Figure 64 below showing about 9ns rise/fall times, corresponding to about 39MHz for fp. The overall supply
current from the +5V supply is around 5mA with no load.
200 mV/DIV
20 ns/DIV
Figure 64. Converter Step Response (1VPP, 20 ns/DIV)
Copyright © 2001–2013, Texas Instruments Incorporated
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LMH6642, LMH6643, LMH6644
SNOS966P –MAY 2001–REVISED MARCH 2013
www.ti.com
PRINTED CIRCUIT BOARD LAYOUT AND COMPONENT VALUES SECTION
Generally, a good high frequency layout will keep power supply and ground traces away from the inverting input
and output pins. Parasitic capacitances on these nodes to ground will cause frequency response peaking and
possible circuit oscillations (see Application Note OA-15 for more information). Texas Instruments suggests the
following evaluation boards as a guide for high frequency layout and as an aid in device testing and
characterization:
Device
Package
Evaluation Board PN
LMH730216
LMH6642MF
LMH6642MA
LMH6643MA
LMH6643MM
LMH6644MA
LMH6644MT
5-Pin SOT-23
8-Pin SOIC
8-Pin SOIC
8-Pin VSSOP
14-Pin SOIC
14-Pin TSSOP
LMH730227
LMH730036
LMH730123
LMH730231
LMH730131
Another important parameter in working with high speed/high performance amplifiers, is the component values
selection. Choosing external resistors that are large in value will effect the closed loop behavior of the stage
because of the interaction of these resistors with parasitic capacitances. These capacitors could be inherent to
the device or a by-product of the board layout and component placement. Either way, keeping the resistor values
lower, will diminish this interaction to a large extent. On the other hand, choosing very low value resistors could
load down nodes and will contribute to higher overall power dissipation.
20
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Product Folder Links: LMH6642 LMH6643 LMH6644
LMH6642, LMH6643, LMH6644
www.ti.com
SNOS966P –MAY 2001–REVISED MARCH 2013
REVISION HISTORY
Changes from Revision O (March 2013) to Revision P
Page
•
Changed layout of National Data Sheet to TI format .......................................................................................................... 20
Copyright © 2001–2013, Texas Instruments Incorporated
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Product Folder Links: LMH6642 LMH6643 LMH6644
PACKAGE OPTION ADDENDUM
www.ti.com
9-Nov-2013
PACKAGING INFORMATION
Orderable Device
LMH6642MA/NOPB
LMH6642MAX/NOPB
Status Package Type Package Pins Package
Eco Plan
Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
-40 to 85
Device Marking
Samples
Drawing
Qty
(1)
(2)
(6)
(3)
(4/5)
ACTIVE
SOIC
SOIC
D
8
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMH66
42MA
ACTIVE
D
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMH66
42MA
LMH6642MF
NRND
SOT-23
SOT-23
DBV
DBV
5
5
1000
1000
TBD
Call TI
CU SN
Call TI
-40 to 85
-40 to 85
A64A
A64A
LMH6642MF/NOPB
ACTIVE
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
LMH6642MFX/NOPB
LMH6643MA
ACTIVE
NRND
SOT-23
SOIC
SOIC
SOIC
SOIC
DBV
D
5
8
8
8
8
3000
95
Green (RoHS
& no Sb/Br)
CU SN
Call TI
CU SN
Call TI
CU SN
Level-1-260C-UNLIM
Call TI
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
A64A
TBD
LMH66
43MA
LMH6643MA/NOPB
LMH6643MAX
ACTIVE
NRND
D
95
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
Call TI
LMH66
43MA
D
2500
2500
TBD
LMH66
43MA
LMH6643MAX/NOPB
ACTIVE
D
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
LMH66
43MA
LMH6643MM
NRND
VSSOP
VSSOP
DGK
DGK
8
8
1000
1000
TBD
Call TI
CU SN
Call TI
-40 to 85
-40 to 85
A65A
A65A
LMH6643MM/NOPB
ACTIVE
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
LMH6643MMX/NOPB
LMH6644MA/NOPB
LMH6644MAX/NOPB
LMH6644MT/NOPB
LMH6644MTX/NOPB
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
VSSOP
SOIC
DGK
D
8
3500
55
Green (RoHS
& no Sb/Br)
CU SN
SN | CU SN
SN | CU SN
CU SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
A65A
14
14
14
14
Green (RoHS
& no Sb/Br)
LMH6644MA
LMH6644MA
SOIC
D
2500
94
Green (RoHS
& no Sb/Br)
TSSOP
TSSOP
PW
PW
Green (RoHS
& no Sb/Br)
LMH66
44MT
2500
Green (RoHS
& no Sb/Br)
CU SN
LMH66
44MT
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
9-Nov-2013
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LMH6642MAX/NOPB
LMH6642MF
SOIC
SOT-23
SOT-23
SOT-23
SOIC
D
DBV
DBV
DBV
D
8
5
2500
1000
1000
3000
2500
2500
2500
2500
330.0
178.0
178.0
178.0
330.0
330.0
330.0
330.0
12.4
8.4
6.5
3.2
3.2
3.2
6.5
6.5
6.5
6.95
5.4
3.2
3.2
3.2
5.4
5.4
9.35
8.3
2.0
1.4
1.4
1.4
2.0
2.0
2.3
1.6
8.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
12.0
8.0
Q1
Q3
Q3
Q3
Q1
Q1
Q1
Q1
LMH6642MF/NOPB
LMH6642MFX/NOPB
LMH6643MAX
5
8.4
8.0
5
8.4
8.0
8
12.4
12.4
16.4
12.4
12.0
12.0
16.0
12.0
LMH6643MAX/NOPB
LMH6644MAX/NOPB
LMH6644MTX/NOPB
SOIC
D
8
SOIC
D
14
14
TSSOP
PW
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LMH6642MAX/NOPB
LMH6642MF
SOIC
SOT-23
SOT-23
SOT-23
SOIC
D
DBV
DBV
DBV
D
8
5
2500
1000
1000
3000
2500
2500
2500
2500
367.0
210.0
210.0
210.0
367.0
367.0
367.0
367.0
367.0
185.0
185.0
185.0
367.0
367.0
367.0
367.0
35.0
35.0
35.0
35.0
35.0
35.0
35.0
35.0
LMH6642MF/NOPB
LMH6642MFX/NOPB
LMH6643MAX
5
5
8
LMH6643MAX/NOPB
LMH6644MAX/NOPB
LMH6644MTX/NOPB
SOIC
D
8
SOIC
D
14
14
TSSOP
PW
Pack Materials-Page 2
IMPORTANT NOTICE
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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
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相关型号：
LMH6642MAX/NOPB
Single Channel, Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifier 8-SOIC -40 to 85
TI
LMH6642MFX/NOPB
Single Channel, Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifier 5-SOT-23 -40 to 85
TI
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