LMH6683MT/NOPB [TI]

三通道 190MHz 单电源运算放大器 | PW | 14 | -40 to 85;
LMH6683MT/NOPB
型号: LMH6683MT/NOPB
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

三通道 190MHz 单电源运算放大器 | PW | 14 | -40 to 85

放大器 光电二极管 运算放大器
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LMH6682, LMH6683  
www.ti.com  
SNOSA43A MAY 2004REVISED APRIL 2013  
LMH6682/6683 190MHz Single Supply, Dual and Triple Operational Amplifiers  
Check for Samples: LMH6682, LMH6683  
1
FEATURES  
DESCRIPTION  
The LMH6682 and LMH6683 are high speed  
operational amplifiers designed for use in modern  
video systems. These single supply monolithic  
amplifiers extend TI's feature-rich, high value video  
portfolio to include a dual and a triple version. The  
important video specifications of differential gain (±  
0.01% typ.) and differential phase (±0.08 degrees)  
combined with an output drive current in each  
amplifier of 85mA make the LMH6682 and LMH6683  
2
VS = ±5V, TA = 25°C, RL = 100, A = +2 (Typical  
Values Unless Specified)  
DG error 0.01%  
DP error 0.08°  
3dB BW (A = +2) 190MHz  
Slew rate (VS = ±5V) 940V/μs  
Supply Current 6.5mA/amp  
Output Current +80/90mA  
excellent choices for  
applications.  
a
full range of video  
Input Common Mode Voltage 0.5V Beyond  
V,1.7V from V+  
Voltage feedback topology in operational amplifiers  
assures maximum flexibility and ease of use in high  
speed amplifier designs. The LMH6682/83 is  
fabricated in TI's VIP10 process. This advanced  
Output Voltage Swing (RL = 2k) 0.8V from  
Rails  
Input Voltage Noise (100KHz) 12nV/Hz  
process provides  
a superior ratio of speed to  
quiescient current consumption and assures the user  
of high-value amplifier designs. Advanced technology  
and circuit design enables in these amplifiers a 3db  
bandwidth of 190MHz, a slew rate of 940V/μsec, and  
stability for gains of less than 1 and greater than +2.  
APPLICATIONS  
CD/DVD ROM  
ADC Buffer Amp  
Portable Video  
The input stage design of the LM6682/83 enables an  
input signal range that extends below the negative  
rail. The output stage voltage range reaches to within  
0.8V of either rail when driving a 2kload. Other  
attractive features include fast settling and low  
distortion. Other applications for these amplifiers  
include servo control designs. These applications are  
sensitive to amplifiers that exhibit phase reversal  
when the inputs exceed the rated voltage range. The  
LMH6682/83 amplifiers are designed to be immune to  
phase reversal when the specified input range is  
exceeded. See applications section. This feature  
makes for design simplicity and flexibility in many  
industrial applications.  
Current Sense Buffer  
Portable Communications  
The LMH6682 dual operational amplifier is offered in  
miniature surface mount packages, SOIC-8, and  
VSSOP-8. The LMH6683 triple amplifier is offered in  
SOIC-14 and TSSOP-14.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2004–2013, Texas Instruments Incorporated  
LMH6682, LMH6683  
SNOSA43A MAY 2004REVISED APRIL 2013  
www.ti.com  
Connection Diagram  
Figure 1. SOIC-8/VSSOP-8 (LMH6682)  
Top View  
Figure 2. SOIC-14/TSSOP-14 (LMH6683)  
Top View  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Absolute Maximum Ratings(1)(2)  
ESD Tolerance  
Human Body Model  
Machine Model  
2KV(3)  
200V(4)  
VIN Differential  
±2.5V  
Output Short Circuit Duration  
Input Current  
See(5)(6)  
±10mA  
Supply Voltage (V+ - V)  
Voltage at Input/Output pins  
Soldering Information  
12.6V  
V+ +0.8V, V0.8V  
Infrared or Convection (20 sec.)  
Wave Soldering (10 sec.)  
235°C  
260°C  
Storage Temperature Range  
Junction Temperature(7)  
65°C to +150°C  
+150°C  
(1) Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for  
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test  
conditions, see the Electrical Characteristics.  
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.  
(3) Human body model, 1.5kin series with 100pF.  
(4) Machine Model, 0in series with 200pF.  
(5) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in  
exceeding the maximum allowed junction temperature of 150°C.  
(6) Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.  
(7) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient  
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.  
Operating Ratings(1)  
Supply Voltage (V+ – V)  
Operating Temperature Range(2)  
Package Thermal Resistance(2)  
3V to 12V  
40°C to +85°C  
190°C/W  
SOIC-8  
VSSOP-8  
SOIC-14  
TSSOP-14  
235°C/W  
145°C/W  
155°C/W  
(1) Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for  
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test  
conditions, see the Electrical Characteristics.  
(2) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient  
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.  
2
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Copyright © 2004–2013, Texas Instruments Incorporated  
Product Folder Links: LMH6682 LMH6683  
LMH6682, LMH6683  
www.ti.com  
SNOSA43A MAY 2004REVISED APRIL 2013  
5V Electrical Characteristics  
Unless otherwise specified, all limits ensured for at TJ = 25°C, V+ = 5V, V= 0V, VO = VCM = V+/2, and RL = 100to V+/2, RF  
= 510. Boldface limits apply at the temperature extremes.  
Symbol  
Parameter  
Conditions  
A = +2, VOUT = 200mVPP  
A = 1, VOUT = 200mVPP  
Min(1)  
Typ(2)  
Max(1)  
Units  
MHz  
dB  
SSBW  
3dB BW  
140  
180  
180  
GFP  
GFR  
Gain Flatness Peaking  
Gain Flatness Rolloff  
A = +2, VOUT = 200mVPP  
DC to 100MHz  
2.1  
A = +2, VOUT = 200mVPP  
DC to 100MHz  
0.1  
dB  
LPD 1°  
GF 0.1dB  
FPBW  
DG  
1° Linear Phase Deviation  
0.1dB Gain Flatness  
A = +2, VOUT = 200mVPP, ±1°  
A = +2, ±0.1dB, VOUT = 200mVPP  
A = +2, VOUT = 2VPP  
A = +2, RL = 150to V+/2  
Pos video only VCM = 2V  
40  
25  
MHz  
MHz  
MHz  
%
Full Power 1dB Bandwidth  
110  
0.03  
Differential Gain  
NTSC 3.58MHz  
DP  
Differential Phase  
NTSC 3.58MHz  
A = +2, RL = 150to V+/2  
Pos video only VCM = 2V  
0.05  
deg  
Time Domain Response  
Tr/Tf  
Rise and Fall Time  
20-80%, VO = 1VPP, AV = +2  
20-80%, VO = 1VPP, AV = 1  
A = +2, VO = 100mVPP  
VO = 2VPP, ±0.1%, AV = +2  
A = +2, VOUT = 3VPP  
2.1  
2
ns  
OS  
Ts  
Overshoot  
22  
%
Settling Time  
Slew Rate(3)  
49  
ns  
SR  
520  
500  
V/μs  
A = 1, VOUT = 3VPP  
Distortion and Noise Response  
HD2  
HD3  
THD  
2nd Harmonic Distortion  
3rd Harmonic Distortion  
Total Harmonic Distortion  
f = 5MHz, VO = 2VPP, A = +2, RL = 2kΩ  
60  
61  
dBc  
dBc  
f = 5MHz, VO = 2VPP, A = +2, RL  
=
100Ω  
f = 5MHz, VO = 2VPP, A = +2, RL = 2kΩ  
77  
54  
f = 5MHz, VO = 2VPP, A = +2, RL  
=
100Ω  
f = 5MHz, VO = 2VPP, A = +2, RL = 2kΩ  
60  
53  
dBc  
f = 5MHz, VO = 2VPP, A = +2, RL  
=
100Ω  
en  
in  
Input Referred Voltage Noise  
Input Referred Current Noise  
Cross-Talk Rejection (Amplifier)  
f = 1kHz  
17  
12  
8
nV/Hz  
f = 100kHz  
f = 1kHz  
pA/Hz  
f = 100kHz  
3
CT  
f = 5MHz, A = +2, SND: RL = 100Ω  
RCV: RF = RG = 510Ω  
77  
dB  
Static, DC Performance  
AVOL  
Large Signal Voltage Gain  
VO = 1.25V to 3.75V,  
85  
75  
70  
95  
85  
RL = 2kto V+/2  
VO = 1.5V to 3.5V,  
dB  
V
RL = 150to V+/2  
VO = 2V to 3V,  
80  
RL = 50to V+/2  
CMVR  
Input Common-Mode Voltage  
Range  
CMRR 50dB  
0.2  
0.1  
0.5  
3.3  
3.0  
2.8  
(1) All limits are ensured by testing or statistical analysis.  
(2) Typical values represent the most likely parametric norm.  
(3) Slew rate is the average of the rising and falling slew rates  
Copyright © 2004–2013, Texas Instruments Incorporated  
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3
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LMH6682, LMH6683  
SNOSA43A MAY 2004REVISED APRIL 2013  
www.ti.com  
5V Electrical Characteristics (continued)  
Unless otherwise specified, all limits ensured for at TJ = 25°C, V+ = 5V, V= 0V, VO = VCM = V+/2, and RL = 100to V+/2, RF  
= 510. Boldface limits apply at the temperature extremes.  
Symbol  
VOS  
Parameter  
Conditions  
Min(1)  
Typ(2)  
Max(1)  
Units  
Input Offset Voltage  
±1.1  
±5  
±7  
mV  
TC VOS  
IB  
Input Offset Voltage Average  
Drift  
See(4)  
See(5)  
±2  
μV/°C  
Input Bias Current  
5  
20  
30  
μA  
nA/°C  
nA  
TC IB  
IOS  
Input Bias Current Drift  
Input Offset Current  
0.01  
50  
300  
500  
CMRR  
Common Mode Rejection Ratio  
Positive Power Supply Rejection V+ = 4.5V to 5.5V, VCM = 1V  
Ratio  
VCM Stepped from 0V to 3.0V  
72  
70  
82  
76  
dB  
dB  
+PSRR  
IS  
Supply Current (per channel)  
No load  
6.5  
9
11  
mA  
Miscellaneous Performance  
VO  
Output Swing  
High  
RL = 2kto V+/2  
RL = 150to V+/2  
RL = 75to V+/2  
RL = 2kto V+/2  
RL = 150to V+/2  
R L = 75to V+/2  
4.10  
3.8  
4.25  
4.19  
4.15  
800  
870  
885  
3.90  
3.70  
V
3.75  
3.50  
Output Swing  
Low  
920  
1100  
970  
1200  
mV  
1100  
1250  
IOUT  
ISC  
Output Current  
VO = 1V from either supply rail  
Sourcing to V+/2  
±40  
+80/75  
155  
mA  
mA  
Output Short Circuit  
Current(6)(7)(8)  
100  
80  
Sinking from V+/2  
100  
220  
80  
RIN  
CIN  
Common Mode Input Resistance  
3
MΩ  
Common Mode Input  
Capacitance  
1.6  
pF  
ROUT  
Output Resistance Closed Loop  
f = 1kHz, A = +2, RL = 50Ω  
f = 1MHz, A = +2, RL = 50Ω  
0.02  
0.12  
(4) Offset Voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.  
(5) Positive current corresponds to current flowing into the device.  
(6) Short circuit test is a momentary test. See next note.  
(7) Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.  
(8) Positive current corresponds to current flowing into the device.  
4
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Copyright © 2004–2013, Texas Instruments Incorporated  
Product Folder Links: LMH6682 LMH6683  
LMH6682, LMH6683  
www.ti.com  
SNOSA43A MAY 2004REVISED APRIL 2013  
±5V Electrical Characteristics  
Unless otherwise specified, all limits ensured for at TJ = 25°C, V+ = 5V, V= 5V, VO = VCM = 0V, and RL = 100to 0V, RF =  
510. Boldface limits apply at the temperature extremes.  
Symbol  
Parameter  
Conditions  
A = +2, VOUT = 200mVPP  
A = 1, VOUT = 200mVPP  
Min(1)  
Typ(2)  
Max(1)  
Units  
MHz  
dB  
SSBW  
3dB BW  
150  
190  
190  
GFP  
GFR  
Gain Flatness Peaking  
Gain Flatness Rolloff  
A = +2, VOUT = 200mVPP  
DC to 100MHz  
1.7  
A = +2, VOUT = 200mVPP  
DC to 100MHz  
0.1  
dB  
LPD 1°  
GF 0.1dB  
FPBW  
DG  
1° Linear Phase Deviation  
0.1dB Gain Flatness  
A = +2, VOUT = 200mVPP, ±1°  
A = +2, ±0.1dB, VOUT = 200mVPP  
A = +2, VOUT = 2VPP  
40  
25  
MHz  
MHz  
MHz  
%
Full Power 1dB Bandwidth  
120  
0.01  
Differential Gain  
NTSC 3.58MHz  
A = +2, RL = 150to 0V  
DP  
Differential Phase  
NTSC 3.58MHz  
A = +2, RL = 150to 0V  
0.08  
deg  
Time Domain Response  
Tr/Tf  
Rise and Fall Time  
20-80%, VO = 1VPP, A = +2  
20-80%, VO = 1VPP, A = 1  
A = +2, VO = 100mVPP  
VO = 2VPP, ±0.1%, A = +2  
A = +2, VOUT = 6VPP  
1.9  
2
ns  
OS  
Ts  
Overshoot  
19  
%
Settling Time  
Slew Rate(3)  
42  
ns  
SR  
940  
900  
V/μs  
A = 1, VOUT = 6VPP  
Distortion and Noise Response  
HD2  
HD3  
THD  
2nd Harmonic Distortion  
3rd Harmonic Distortion  
Total Harmonic Distortion  
f = 5MHz, VO = 2VPP, A = +2, RL = 2kΩ  
63  
66  
dBc  
dBc  
f = 5MHz, VO = 2VPP, A = +2, RL  
=
100Ω  
f = 5MHz, VO = 2VPP, A = +2, RL = 2kΩ  
82  
54  
f = 5MHz, VO = 2VPP, A = +2, RL  
=
100Ω  
f = 5MHz, VO = 2VPP, A = +2, RL = 2kΩ  
63  
54  
dBc  
f = 5MHz, VO = 2VPP, A = +2, RL  
=
100Ω  
en  
in  
Input Referred Voltage Noise  
Input Referred Current Noise  
Cross-Talk Rejection (Amplifier)  
f = 1kHz  
18  
12  
6
nV/Hz  
f = 100kHz  
f = 1kHz  
pA/Hz  
f = 100kHz  
3
CT  
f = 5MHz, A = +2, SND: RL = 100Ω  
RCV: RF = RG = 510Ω  
78  
dB  
Static, DC Performance  
AVOL  
Large Signal Voltage Gain  
VO = 3.75V to 3.75V,  
RL = 2kto V+/2  
87  
80  
75  
100  
90  
VO = 3.5V to 3.5V,  
RL = 150to V+/2  
dB  
V
VO = 3V to 3V,  
RL = 50to V+/2  
85  
CMVR  
Input Common Mode Voltage  
Range  
CMRR 50dB  
5.2  
5.1  
5.5  
3.3  
3.0  
2.8  
(1) All limits are ensured by testing or statistical analysis.  
(2) Typical values represent the most likely parametric norm.  
(3) Slew rate is the average of the rising and falling slew rates  
Copyright © 2004–2013, Texas Instruments Incorporated  
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5
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SNOSA43A MAY 2004REVISED APRIL 2013  
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±5V Electrical Characteristics (continued)  
Unless otherwise specified, all limits ensured for at TJ = 25°C, V+ = 5V, V= 5V, VO = VCM = 0V, and RL = 100to 0V, RF =  
510. Boldface limits apply at the temperature extremes.  
Symbol  
VOS  
Parameter  
Conditions  
Min(1)  
Typ(2)  
Max(1)  
Units  
Input Offset Voltage  
±1  
±5  
±7  
mV  
TC VOS  
IB  
Input Offset Voltage Average  
Drift  
See(4)  
See(5)  
±2  
μV/°C  
Input Bias Current  
5  
20  
30  
μA  
nA/°C  
nA  
TC IB  
IOS  
Input Bias Current Drift  
Input Offset Current  
0.01  
50  
300  
500  
CMRR  
Common Mode Rejection Ratio  
Positive Power Supply Rejection V+ = 8.5V to 9.5V,  
Ratio  
VCM Stepped from 5V to 3.0V  
75  
75  
84  
82  
dB  
dB  
+PSRR  
V= 1V  
PSRR  
Negative Power Supply Rejection V= 4.5V to 5.5V,  
Ratio  
78  
85  
dB  
V+ = 5V  
No load  
IS  
Supply Current (per channel)  
6.5  
9.5  
11  
mA  
Miscellaneous Performance  
VO  
Output Swing  
High  
RL = 2kto 0V  
RL = 150to 0V  
RL = 75to 0V  
RL = 2kto 0V  
RL = 150to 0V  
R L = 75to 0V  
4.10  
3.80  
4.25  
4.20  
3.90  
3.70  
V
3.75  
3.50  
4.18  
Output Swing  
Low  
4.19  
4.05  
4.00  
4.07  
3.80  
3.89  
3.65  
mV  
3.70  
3.50  
IOUT  
ISC  
Output Current  
VO = 1V from either supply rail  
Sourcing to 0V  
±45  
+85/80  
180  
mA  
mA  
Output Short Circuit  
Current(6)(7)(8)  
120  
100  
Sinking from 0V  
120  
230  
100  
RIN  
CIN  
Common Mode Input Resistance  
4
MΩ  
Common Mode Input  
Capacitance  
1.6  
pF  
ROUT  
Output Resistance Closed Loop  
f = 1kHz, A = +2, RL = 50Ω  
f = 1MHz, A = +2, RL = 50Ω  
0.02  
0.12  
(4) Offset Voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.  
(5) Positive current corresponds to current flowing into the device.  
(6) Short circuit test is a momentary test. See next note.  
(7) Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.  
(8) Positive current corresponds to current flowing into the device.  
6
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SNOSA43A MAY 2004REVISED APRIL 2013  
Typical Schematic  
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Typical Performance Characteristics  
At TA = 25°C, V+ = +5V, V= 5V, RF = 510for A = +2; unless otherwise specified.  
Non-Inverting Frequency Response  
Inverting Frequency Response  
Figure 3.  
Figure 4.  
Non-Inverting Frequency Response for Various Gain  
Inverting Frequency Response for Various Gain  
Figure 5.  
Figure 6.  
Non-Inverting Phase vs. Frequency for Various Gain  
Inverting Phase vs. Frequency for Various Gain  
Figure 7.  
Figure 8.  
8
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Typical Performance Characteristics (continued)  
At TA = 25°C, V+ = +5V, V= 5V, RF = 510for A = +2; unless otherwise specified.  
Open Loop Gain and Phase vs. Frequency Over  
Open Loop Gain & Phase vs. Frequency  
Temperature  
Figure 9.  
Figure 10.  
Non-Inverting Frequency Response Over Temperature  
Inverting Frequency Response Over Temperature  
Figure 11.  
Figure 12.  
Gain Flatness 0.1dB  
Differential Gain & Phase for A = +2  
Figure 13.  
Figure 14.  
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Typical Performance Characteristics (continued)  
At TA = 25°C, V+ = +5V, V= 5V, RF = 510for A = +2; unless otherwise specified.  
Transient Response Negative  
Transient Response Positive  
Figure 15.  
Figure 16.  
Noise vs. Frequency  
Noise vs. Frequency  
Figure 17.  
Figure 18.  
Harmonic Distortion vs. VOUT  
Harmonic Distortion vs. VOUT  
Figure 19.  
Figure 20.  
10  
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SNOSA43A MAY 2004REVISED APRIL 2013  
Typical Performance Characteristics (continued)  
At TA = 25°C, V+ = +5V, V= 5V, RF = 510for A = +2; unless otherwise specified.  
Harmonic Distortion vs. VOUT  
THD vs. for Various Frequencies  
Figure 21.  
Figure 22.  
Harmonic Distortion vs. Frequency  
Crosstalk vs. Frequency  
Figure 23.  
Figure 24.  
ROUT vs. Frequency  
IOS vs. VSUPPLY Over Temperature  
Figure 25.  
Figure 26.  
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Typical Performance Characteristics (continued)  
At TA = 25°C, V+ = +5V, V= 5V, RF = 510for A = +2; unless otherwise specified.  
VOS vs. VS @ 40°C  
VOS vs. VS @ 25°C  
Figure 27.  
Figure 28.  
VOS vs. VS @ 85°C  
VOS vs. VS @ 125°C  
Figure 29.  
Figure 30.  
VOS vs. VOUT  
VOS vs. VOUT  
Figure 31.  
Figure 32.  
12  
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SNOSA43A MAY 2004REVISED APRIL 2013  
Typical Performance Characteristics (continued)  
At TA = 25°C, V+ = +5V, V= 5V, RF = 510for A = +2; unless otherwise specified.  
ISUPPLY/Amp vs. VCM  
ISUPPLY/Amp vs. VSUPPLY  
Figure 33.  
Figure 34.  
VOUT vs. ISOURCE  
VOUT vs. ISINK  
Figure 35.  
Figure 36.  
VOUT vs. ISOURCE  
VOUT vs. ISINK  
Figure 37.  
Figure 38.  
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Typical Performance Characteristics (continued)  
At TA = 25°C, V+ = +5V, V= 5V, RF = 510for A = +2; unless otherwise specified.  
VOS vs. VCM  
|IB|vs. VS  
Figure 39.  
Figure 40.  
Short Circuit ISOURCE vs. VS  
Short Circuit ISINK vs. VS  
Figure 41.  
Figure 42.  
Linearity Input vs. Output  
Linearity Input vs. Output  
Figure 43.  
Figure 44.  
14  
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Typical Performance Characteristics (continued)  
At TA = 25°C, V+ = +5V, V= 5V, RF = 510for A = +2; unless otherwise specified.  
CMRR vs. Frequency  
PSRR vs. Frequency  
Figure 45.  
Figure 46.  
Small Signal Pulse Response for A = +2  
Small Signal Pulse Response A = 1  
Figure 47.  
Figure 48.  
Large Signal Pulse Response  
Large Signal Pulse Response  
Figure 49.  
Figure 50.  
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APPLICATIONS SECTION  
LARGE SIGNAL BEHAVIOR  
Amplifying high frequency signals with large amplitudes (as in video applications) has some special aspects to  
look after. The bandwidth of the Op Amp for large amplitudes is less than the small signal bandwidth because of  
slew rate limitations. While amplifying pulse shaped signals the slew rate properties of the OpAmp become more  
important at higher amplitude ranges. Due to the internal structure of an Op Amp the output can only change with  
a limited voltage difference per time unit (dV/dt). This can be explained as follows: To keep it simple, assume  
that an Op Amp consists of two parts; the input stage and the output stage. In order to stabilize the Op Amp, the  
output stage has a compensation capacitor in its feedback path. This Miller C integrates the current from the  
input stage and determines the pulse response of the Op Amp. The input stage must charge/discharge the  
feedback capacitor, as can be seen in Figure 51.  
Figure 51.  
When a voltage transient is applied to the non inverting input of the Op Amp, the current from the input stage will  
charge the capacitor and the output voltage will slope up. The overall feedback will subtract the gradually  
increasing output voltage from the input voltage. The decreasing differential input voltage is converted into a  
current by the input stage (Gm).  
I*Δt = C *ΔV  
ΔV/Δt = I/C  
I=ΔV*Gm  
(1)  
(2)  
(3)  
where I = current  
t = time  
C = capacitance  
V = voltage  
Gm = transconductance  
Slew rate ΔV/Δt = volt/second  
In most amplifier designs the current I is limited for high differential voltages (Gm becomes zero). The slew rate  
will than be limited as well:  
ΔV/Δt = Imax/C  
(4)  
The LMH6682/83 has a different setup of the input stage. It has the property to deliver more current to the output  
stage when the input voltage is higher (class AB input). The current into the Miller capacitor exhibits an  
exponential character, while this current in other Op Amp designs reaches a saturation level at high input levels:  
(see Figure 52)  
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Figure 52.  
This property of the LMH6682/83 guaranties a higher slew rate at higher differential input voltages.  
ΔV/Δt = ΔV*Gm/C  
(5)  
In Figure 53 one can see that a higher transient voltage than will lead to a higher slew rate.  
Figure 53.  
HANDLING VIDEO SIGNALS  
When handling video signals, two aspects are very important especially when cascading amplifiers in a NTSC- or  
PAL video system. A composite video signal consists of both amplitude and phase information. The amplitude  
represents saturation while phase determines color (color burst is 3.59MHz for NTSC and 4.58MHz for PAL  
systems). In this case it is not only important to have an accurate amplification of the amplitude but also it is  
important not to add a varying phase shift to the video signals. It is a known phenomena that at different dc  
levels over a certain load the phase of the amplified signal will vary a little bit. In a video chain many amplifiers  
will be cascaded and all errors will be added together. For this reason, it is necessary to have strict requirements  
for the variation in gain and phase in conjunction to different dc levels. As can be seen in the tables the number  
for the differential gain for the LMH6682/83 is only 0.01% and for the differential phase it is only 0.08° at a supply  
voltage of ±5V. Note that the phase is very dependent of the load resistance, mainly because of the dc current  
delivered by the parts output stage into the load. For more information about differential gain and phase and how  
to measure it see Application Note OA-24 SNOA370 which can be found on via TI's home page  
http://www.ti.com  
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OUTPUT PHASE REVERSAL  
This is a problem with some operational amplifiers. This effect is caused by phase reversal in the input stage due  
to saturation of one or more of the transistors when the inputs exceed the normal expected range of voltages.  
Some applications, such as servo control loops among others, are sensitive to this kind of behavior and would  
need special safeguards to ensure proper functioning. The LMH6682/6683 is immune to output phase reversal  
with input overload. With inputs exceeded, the LMH6682/6683 output will stay at the clamped voltage from the  
supply rail. Exceeding the input supply voltages beyond the Absolute Maximum Ratings of the device could  
however damage or otherwise adversely effect the reliability or life of the device.  
DRIVING CAPACITIVE LOADS  
The LMH6682/6683 can drive moderate values of capacitance by utilizing a series isolation resistor between the  
output and the capacitive load. Capacitive load tolerance will improve with higher closed loop gain values.  
Applications such as ADC buffers, among others, present complex and varying capacitive loads to the Op Amp;  
best value for this isolation resistance is often found by experimentation and actual trial and error for each  
application.  
DISTORTION  
Applications with demanding distortion performance requirements are best served with the device operating in  
the inverting mode. The reason for this is that in the inverting configuration, the input common mode voltage  
does not vary with the signal and there is no subsequent ill effects due to this shift in operating point and the  
possibility of additional non-linearity. Moreover, under low closed loop gain settings (most suited to low  
distortion), the non-inverting configuration is at a further disadvantage of having to contend with the input  
common voltage range. There is also a strong relationship between output loading and distortion performance  
(i.e. 2kvs. 100distortion improves by about 15dB @1MHz) especially at the lower frequency end where the  
distortion tends to be lower. At higher frequency, this dependence diminishes greatly such that this difference is  
only about 5dB at 10MHz. But, in general, lighter output load leads to reduced HD3 term and thus improves  
THD. (See Harmonic Distortion plots, Figures 19 through 23).  
PRINTED CIRCUIT BOARD LAYOUT AND COMPONENT VALUES SELECTION  
Generally it is a good idea to keep in mind that for a good high frequency design both the active parts and the  
passive ones are suitable for the purpose you are using them for. Amplifying frequencies of several hundreds of  
MHz is possible while using standard resistors but it makes life much easier when using surface mount ones.  
These resistors (and capacitors) are smaller and therefore parasitics have lower values and will have less  
influence on the properties of the amplifier. Another important issue is the PCB, which is no longer a simple  
carrier for all the parts and a medium to interconnect them. The board becomes a real part itself, adding its own  
high frequency properties to the overall performance of the circuit. It's good practice to have at least one ground  
plane on a PCB giving a low impedance path for all decouplings and other ground connections. Care should be  
taken especially that on board transmission lines have the same impedance as the cables they are connected to  
(i.e. 50for most applications and 75in case of video and cable TV applications). These transmission lines  
usually require much wider traces on a standard double sided PCB than needed for a 'normal' connection.  
Another important issue is that inputs and outputs must not 'see' each other or are routed together over the PCB  
at a small distance. Furthermore it is important that components are placed as flat as possible on the surface of  
the PCB. For higher frequencies a long lead can act as a coil, a capacitor or an antenna. A pair of leads can  
even form a transformer. Careful design of the PCB avoids oscillations or other unwanted behavior. When  
working with really high frequencies, the only components which can be used will be the surface mount ones (for  
more information see OA-15 SNOA367).  
As an example of how important the component values are for the behavior of your circuit, look at the following  
case: On a board with good high frequency layout, an amplifier is placed. For the two (equal) resistors in the  
feedback path, 5 different values are used to set the gain to +2. The resistors vary from 200to 3k.  
18  
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Figure 54.  
In Figure 54 it can be seen that there's more peaking with higher resistor values, which can lead to oscillations  
and bad pulse responses. On the other hand the low resistor values will contribute to higher overall power  
consumption.  
TI suggests the following evaluation boards as a guide for high frequency layout and as an aid in device testing  
and characterization.  
Device  
Package  
8-Pin SOIC  
Evaluation Board PN  
CLC730036  
LMH6682MA  
LMH6682MM  
LMH6683MA  
LMH6683MT  
8-Pin VSSOP  
14-Pin SOIC  
14-Pin TSSOP  
CLC730123  
CLC730031  
CLC730131  
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REVISION HISTORY  
Changes from Original (April 2013) to Revision A  
Page  
Changed layout of National Data Sheet to TI format .......................................................................................................... 19  
20  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
23-Jun-2023  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
LMH6682MA/NOPB  
LMH6682MAX/NOPB  
ACTIVE  
SOIC  
SOIC  
D
D
8
8
95  
RoHS & Green  
SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 85  
-40 to 85  
LMH66  
82MA  
Samples  
Samples  
ACTIVE  
2500 RoHS & Green  
SN  
LMH66  
82MA  
LMH6682MM/NOPB  
LMH6682MMX/NOPB  
LMH6683MA/NOPB  
ACTIVE  
ACTIVE  
ACTIVE  
VSSOP  
VSSOP  
SOIC  
DGK  
DGK  
D
8
8
1000 RoHS & Green  
3500 RoHS & Green  
SN  
SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 85  
-40 to 85  
-40 to 85  
A90A  
Samples  
Samples  
Samples  
A90A  
14  
55  
2500 RoHS & Green  
94 RoHS & Green  
2500 RoHS & Green  
RoHS & Green  
NIPDAU | SN  
LMH66  
83MA  
LMH6683MAX/NOPB  
LMH6683MT/NOPB  
LMH6683MTX/NOPB  
ACTIVE  
ACTIVE  
ACTIVE  
SOIC  
D
14  
14  
14  
NIPDAU | SN  
NIPDAU | SN  
NIPDAU | SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 85  
-40 to 85  
-40 to 85  
LMH66  
83MA  
Samples  
Samples  
Samples  
TSSOP  
TSSOP  
PW  
PW  
LMH66  
83MT  
LMH66  
83MT  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
23-Jun-2023  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
21-Jul-2023  
TAPE AND REEL INFORMATION  
REEL DIMENSIONS  
TAPE DIMENSIONS  
K0  
P1  
W
B0  
Reel  
Diameter  
Cavity  
A0  
A0 Dimension designed to accommodate the component width  
B0 Dimension designed to accommodate the component length  
K0 Dimension designed to accommodate the component thickness  
Overall width of the carrier tape  
W
P1 Pitch between successive cavity centers  
Reel Width (W1)  
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  
Sprocket Holes  
Q1 Q2  
Q3 Q4  
Q1 Q2  
Q3 Q4  
User Direction of Feed  
Pocket Quadrants  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LMH6682MAX/NOPB  
LMH6682MM/NOPB  
LMH6682MMX/NOPB  
LMH6683MAX/NOPB  
LMH6683MTX/NOPB  
LMH6683MTX/NOPB  
SOIC  
VSSOP  
VSSOP  
SOIC  
D
8
8
2500  
1000  
3500  
2500  
2500  
2500  
330.0  
178.0  
330.0  
330.0  
330.0  
330.0  
12.4  
12.4  
12.4  
16.4  
12.4  
12.4  
6.5  
5.3  
5.4  
3.4  
3.4  
9.35  
5.6  
5.6  
2.0  
1.4  
1.4  
2.3  
1.6  
1.6  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
12.0  
12.0  
12.0  
16.0  
12.0  
12.0  
Q1  
Q1  
Q1  
Q1  
Q1  
Q1  
DGK  
DGK  
D
8
5.3  
14  
14  
14  
6.5  
TSSOP  
TSSOP  
PW  
PW  
6.95  
6.95  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
21-Jul-2023  
TAPE AND REEL BOX DIMENSIONS  
Width (mm)  
H
W
L
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LMH6682MAX/NOPB  
LMH6682MM/NOPB  
LMH6682MMX/NOPB  
LMH6683MAX/NOPB  
LMH6683MTX/NOPB  
LMH6683MTX/NOPB  
SOIC  
VSSOP  
VSSOP  
SOIC  
D
8
8
2500  
1000  
3500  
2500  
2500  
2500  
367.0  
208.0  
367.0  
367.0  
367.0  
356.0  
367.0  
191.0  
367.0  
367.0  
367.0  
356.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
DGK  
DGK  
D
8
14  
14  
14  
TSSOP  
TSSOP  
PW  
PW  
Pack Materials-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
21-Jul-2023  
TUBE  
T - Tube  
height  
L - Tube length  
W - Tube  
width  
B - Alignment groove width  
*All dimensions are nominal  
Device  
Package Name Package Type  
Pins  
SPQ  
L (mm)  
W (mm)  
T (µm)  
B (mm)  
LMH6682MA/NOPB  
LMH6683MA/NOPB  
LMH6683MA/NOPB  
LMH6683MT/NOPB  
LMH6683MT/NOPB  
D
D
SOIC  
SOIC  
8
95  
55  
55  
94  
94  
495  
495  
495  
495  
530  
8
8
4064  
4064  
3.05  
3.05  
3.05  
4.06  
3.5  
14  
14  
14  
14  
D
SOIC  
8
4064  
PW  
PW  
TSSOP  
TSSOP  
8
2514.6  
3600  
10.2  
Pack Materials-Page 3  
PACKAGE OUTLINE  
D0008A  
SOIC - 1.75 mm max height  
SCALE 2.800  
SMALL OUTLINE INTEGRATED CIRCUIT  
C
SEATING PLANE  
.228-.244 TYP  
[5.80-6.19]  
.004 [0.1] C  
A
PIN 1 ID AREA  
6X .050  
[1.27]  
8
1
2X  
.189-.197  
[4.81-5.00]  
NOTE 3  
.150  
[3.81]  
4X (0 -15 )  
4
5
8X .012-.020  
[0.31-0.51]  
B
.150-.157  
[3.81-3.98]  
NOTE 4  
.069 MAX  
[1.75]  
.010 [0.25]  
C A B  
.005-.010 TYP  
[0.13-0.25]  
4X (0 -15 )  
SEE DETAIL A  
.010  
[0.25]  
.004-.010  
[0.11-0.25]  
0 - 8  
.016-.050  
[0.41-1.27]  
DETAIL A  
TYPICAL  
(.041)  
[1.04]  
4214825/C 02/2019  
NOTES:  
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.  
Dimensioning and tolerancing per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed .006 [0.15] per side.  
4. This dimension does not include interlead flash.  
5. Reference JEDEC registration MS-012, variation AA.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
D0008A  
SOIC - 1.75 mm max height  
SMALL OUTLINE INTEGRATED CIRCUIT  
8X (.061 )  
[1.55]  
SYMM  
SEE  
DETAILS  
1
8
8X (.024)  
[0.6]  
SYMM  
(R.002 ) TYP  
[0.05]  
5
4
6X (.050 )  
[1.27]  
(.213)  
[5.4]  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:8X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
EXPOSED  
METAL  
EXPOSED  
METAL  
.0028 MAX  
[0.07]  
.0028 MIN  
[0.07]  
ALL AROUND  
ALL AROUND  
SOLDER MASK  
DEFINED  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
4214825/C 02/2019  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
D0008A  
SOIC - 1.75 mm max height  
SMALL OUTLINE INTEGRATED CIRCUIT  
8X (.061 )  
[1.55]  
SYMM  
1
8
8X (.024)  
[0.6]  
SYMM  
(R.002 ) TYP  
[0.05]  
5
4
6X (.050 )  
[1.27]  
(.213)  
[5.4]  
SOLDER PASTE EXAMPLE  
BASED ON .005 INCH [0.125 MM] THICK STENCIL  
SCALE:8X  
4214825/C 02/2019  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
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DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”  
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY  
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD  
PARTY INTELLECTUAL PROPERTY RIGHTS.  
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate  
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable  
standards, and any other safety, security, regulatory or other requirements.  
These resources are subject to change without notice. TI grants you permission to use these resources only for development of an  
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LMH6702

Ultra Low Distortion, Wideband Op Amp
NSC

LMH6702

LMH6702 1.7-GHz Ultra-Low Distortion Wideband Op Amp
TI

LMH6702 MDC

1.7GHz、超低失真、宽带运算放大器 | Y | 0 | -40 to 85
TI

LMH6702-MIL

1.7-GHz Ultra-Low Distortion Wideband Op Amp
TI

LMH6702J-QMLV

1.7 GHz, Ultra Low Distortion, Wideband Op Amp
TI

LMH6702JFLQMLV

1.7 GHz, Ultra Low Distortion, Wideband Op Amp
TI

LMH6702JFQMLV

1.7 GHz, Ultra Low Distortion, Wideband Op Amp
TI

LMH6702JFQMLV

IC 1 CHANNEL, VIDEO AMPLIFIER, CDIP8, CERAMIC, DIP-8, Audio/Video Amplifier
NSC

LMH6702MA

Ultra Low Distortion, Wideband Op Amp
NSC