LMH6723MFX/NOPB [TI]
单通道 370MHz 1mA 电流反馈放大器 | DBV | 5 | -40 to 85;
| 型号： | LMH6723MFX/NOPB |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 单通道 370MHz 1mA 电流反馈放大器 | DBV | 5 | -40 to 85 放大器 光电二极管 |
| 文件： | 总32页 (文件大小：1569K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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LMH6723, LMH6724
SNOSA83I –AUGUST 2003–REVISED AUGUST 2014
LMH6723/LMH6724 Single/Dual/Quad 370-MHz, 1-mA
Current Feedback Operational Amplifier
1 Features
3 Description
The LMH6723/LMH6724 provides a 260 MHz small
signal bandwidth at a gain of +2 V/V and a 600 V/μs
slew rate while consuming only 1 mA from ±5V
supplies.
1
•
Large Signal Bandwidth and Slew Rate 100%
Tested
•
370 MHz Bandwidth (AV = 1, VOUT = 0.5 VPP) −3
dB BW
The LMH6723/LMH6724 supports video applications
with its 0.03% and 0.11° differential gain and phase
for NTSC and PAL video signals, while also offering a
flat gain response of 0.1 dB to 100 MHz. Additionally,
the LMH6723/LMH6724 can deliver 110 mA of linear
output current. This level of performance, as well as a
wide supply range of 4.5 to 12V, makes the
LMH6723/LMH6724 an ideal op amp for a variety of
portable applications. With small packages (SOIC
and SOT-23), low power requirement, and high
performance, the LMH6723/LMH6724 serves a wide
variety of portable applications.
•
•
•
•
•
•
•
•
•
260 MHz (AV = +2 V/V, VOUT = 0.5 VPP) −3 dB BW
1 mA Supply Current
110 mA Linear Output Current
0.03%, 0.11° Differential Gain, Phase
0.1 dB Gain Flatness to 100 MHz
Fast Slew Rate: 600 V/μs
Unity Gain Stable
Single Supply Range of 4.5 to 12V
Improved Replacement for CLC450, CLC452,
(LMH6723)
The LMH6723/LMH6724 is manufactured in Texas
Instruments' VIP10 complimentary bipolar process.
2 Applications
Device Information(1)
•
•
•
•
Line Driver
PART NUMBER
LMH6723
PACKAGE
BODY SIZE (NOM)
2.90 mm × 1.60 mm
4.90 mm × 3.91 mm
4.90 mm × 3.91 mm
Portable Video
A/D Driver
SOT-23 (5)
LMH6723
SOIC (8)
SOIC (8)
Portable DVD
LMH6724
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Typical Application
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMH6723, LMH6724
SNOSA83I –AUGUST 2003–REVISED AUGUST 2014
www.ti.com
Table of Contents
7.3 Evaluation Boards................................................... 13
7.4 Feedback Resistor Selection .................................. 14
7.5 Active Filters............................................................ 16
7.6 Driving Capacitive Loads ........................................ 16
7.7 Inverting Input Parasitic Capacitance ..................... 17
7.8 Layout Considerations ............................................ 18
7.9 Video Performance ................................................. 18
7.10 Single 5-V Supply Video ....................................... 18
Power Supply Recommendations...................... 19
8.1 ESD Protection........................................................ 19
Device and Documentation Support.................. 20
9.1 Related Links .......................................................... 20
9.2 Trademarks............................................................. 20
9.3 Electrostatic Discharge Caution.............................. 20
9.4 Glossary.................................................................. 20
1
2
3
4
5
6
Features.................................................................. 1
Applications ........................................................... 1
Description ............................................................. 1
Revision History..................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 Handling Ratings....................................................... 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 ±5V Electrical Characteristics ................................... 5
6.6 ±2.5V Electrical Characteristics ................................ 6
6.7 Typical Performance Characteristics ........................ 8
Application and Implementation ........................ 13
7.1 Application Information............................................ 13
7.2 Typical Application .................................................. 13
8
9
7
10 Mechanical, Packaging, and Orderable
Information ........................................................... 20
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision H (April 2013) to Revision I
Page
•
Changed data sheet structure and organization. Added, updated, or renamed the following sections: Device
Information Table, Application and Implementation; Power Supply Recommendations; Device and Documentation
Support; Mechanical, Packaging, and Ordering Information. Removed "LMH6725" from title and document. ..................... 1
Deleted "Channel Matching" and "Crosstalk" plots. .............................................................................................................. 8
Changed Figure 11 ................................................................................................................................................................ 9
Changed Figure 12 ................................................................................................................................................................ 9
Changed Figure 29............................................................................................................................................................... 11
Changed Figure 30............................................................................................................................................................... 11
Deleted sentence beginning "These evaluation boards..." .................................................................................................. 13
Deleted sentence beginning, "Although the example..." ..................................................................................................... 17
Deleted sentence beginning "The SOIC-14 has ..." ............................................................................................................ 19
•
•
•
•
•
•
•
•
Changes from Revision G (April 2013) to Revision H
Page
•
Changed layout of National Data Sheet to TI format ........................................................................................................... 19
2
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Product Folder Links: LMH6723 LMH6724
LMH6723, LMH6724
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SNOSA83I –AUGUST 2003–REVISED AUGUST 2014
5 Pin Configuration and Functions
5-Pin SOT-23 (LMH6723)
Package DBV
8-Pin SOIC Package (LMH6723)
Package D08A
(Top View)
(Top View)
1
8
7
6
5
1
5
+
N/C
N/C
V
OUT
2
3
+
-IN
V
-
-
2
V
OUTPUT
+IN
+
-
+
4
3
4
-IN
-
+IN
N/C
V
8-Pin SOIC Package (LMH6724)
Package D08A
(Top View)
1
8
+
OUT A
V
A
-
+
2
3
4
7
6
5
-IN A
+IN A
OUT B
-IN B
B
+
-
-
+IN B
V
Pin Functions
PIN
NUMBER
I/O
DESCRIPTION
NAME
LMH6723
(DBV)
LMH6723
(D08A)
LMH6724
(D08A)
-IN
4
3
2
3
I
I
Inverting Input
+IN
Non-inverting Input
ChA Inverting Input
-IN A
+IN A
-IN B
+IN B
N/C
2
3
6
5
I
I
ChA Non-inverting Input
ChB Inverting Input
ChB Non-inverting Input
–
I
I
1,5,8
–
O
O
O
I
OUT A
OUT B
OUTPUT
V -
1
7
ChA Output
ChB Output
1
2
5
6
4
7
Output
4
8
Negative Supply
Positive Supply
V+
I
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SNOSA83I –AUGUST 2003–REVISED AUGUST 2014
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6 Specifications
6.1 Absolute Maximum Ratings(1)(2)(3)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
±6.75
UNIT
V
VCC (V+ - V-)
IOUT
120(4)
±VCC
+150
235
mA
V
Common Mode Input Voltage
Maximum Junction Temperature
°C
°C
°C
Soldering Information
Infrared or Convection (20 sec)
Wave Soldering (10 sec)
260
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications, see the Electrical
Characteristics tables.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(4) The maximum continuous output current (IOUT) is determined by device power dissipation limitations. See Power Supply
Recommendations for more details.
6.2 Handling Ratings
MIN
MAX
+150
2000
UNIT
Tstg
Storage temperature range
−65
°C
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all
pins(1)(2)
V(ESD)
Electrostatic discharge
V
Machine Model (MM), per JEDEC specification JESD22-C101, all
pins(2)(3)
200
(1) JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process.
(2) Human Body Model, 1.5 kΩ in series with 100 pF. Machine Model, 0Ω In series with 200 pF.
(3) JEDEC document JEP157 states that 200-V MM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions(1)
over operating free-air temperature range (unless otherwise noted)
MIN
−40
4.5
NOM
MAX
+85
12
UNIT
°C
Operating Temperature Range
Nominal Supply Voltage
V
(1) The maximum continuous output current (IOUT) is determined by device power dissipation limitations. See Power Supply
Recommendations for more details.
6.4 Thermal Information
SOT-23
DBV
SOIC
D08A
THERMAL METRIC(1)
UNIT
5 PINS
230°C/W
8 PINS
166°C/W
RθJA
Junction-to-ambient thermal resistance
°C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
4
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LMH6723, LMH6724
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SNOSA83I –AUGUST 2003–REVISED AUGUST 2014
6.5 ±5V Electrical Characteristics
Unless otherwise specified, AV = +2, RF = 1200Ω, RL = 100Ω. Boldface limits apply at temperature extremes.(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
FREQUENCY DOMAIN RESPONSE
SSBW
LSBW
−3 dB Bandwidth Small Signal
−3dB Bandwidth Large Signal
VOUT = 0.5 VPP
260
110
MHz
MHz
VOUT = 4.0 VPP
90
85
95
UGBW
.1dB BW
DG
−3 dB Bandwidth Unity Gain
.1 dB Bandwidth
VOUT = .2 VPP AV = 1 V/V
VOUT = 0.5 VPP
370
MHz
MHz
100
Differential Gain
RL = 150Ω, 4.43 MHz
RL = 150Ω, 4.43 MHz
0.03%
0.11
DP
Differential Phase
deg
TIME DOMAIN RESPONSE
TRS
TSS
SR
Rise and Fall Time
Settling Time to 0.05%
Slew Rate
4V Step
2V Step
4V Step
2.5
30
ns
ns
500
600
V/μs
DISTORTION and NOISE RESPONSE
HD2
HD3
2nd Harmonic Distortion
3rd Harmonic Distortion
2 VPP, 5 MHz
2 VPP, 5 MHz
−65
−63
dBc
dBc
EQUIVALENT INPUT NOISE
VN
Non-Inverting Voltage Noise
>1 MHz
>1 MHz
>1 MHz
4.3
6
nV/√Hz
pA/√Hz
pA/√Hz
NICN
ICN
Inverting Current Noise
Non-Inverting Current Noise
6
STATIC, DC PERFORMANCE
VIO
Input Offset Voltage
±3
±3.7
1
−2
0.4
64
64
60
60
1
mV
µA
µA
IBN
Input Bias Current
Non-Inverting
Inverting
±4
±5
IBI
Input Bias Current
±4
±5
PSRR
Power Supply Rejection Ratio
DC, 1V Step
LMH6723
LMH6724
LMH6723
LMH6724
59
57
dB
59
55
CMRR
Common Mode Rejection Ratio
DC, 1V Step
57
55
dB
57
53
ICC
Supply Current (per amplifier)
RL = ∞
1.2
1.4
mA
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self heating where TJ > TA. See Application and Implementation for information on temperature
derating of this device. Min/Max ratings are based on product characterization and simulation. Individual parameters are tested as
noted.
Copyright © 2003–2014, Texas Instruments Incorporated
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±5V Electrical Characteristics (continued)
Unless otherwise specified, AV = +2, RF = 1200Ω, RL = 100Ω. Boldface limits apply at temperature extremes.(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
MISCELLANEOUS PERFORMANCE
RIN+
RIN−
Input Resistance
Non-Inverting
100
500
kΩ
Input Resistance
(Output Resistance of Input Buffer)
Inverting
Ω
CIN
Input Capacitance
Output Resistance
Output Voltage Range
Non-Inverting
Closed Loop
RL = ∞
1.5
pF
ROUT
VO
0.01
Ω
LMH6723
LMH6724
±4
±3.9
±4.1
±4.1
3.7
V
±4
±3.85
VOL
Output Voltage Range, High
Output Voltage Range, Low
RL = 100Ω
RL = 100Ω
3.6
3.5
V
V
−3.25
−3.1
−3.45
CMVR
IO
Input Voltage Range
Output Current
Common Mode, CMRR > 50 dB
Sourcing, VOUT = 0
±4.0
95
70
110
110
mA
Sinking, VOUT = 0
−80
−70
6.6 ±2.5V Electrical Characteristics
Unless otherwise specified, AV = +2, RF = 1200Ω, RL = 100Ω. Boldface limits apply at temperature extremes.(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
FREQUENCY DOMAIN RESPONSE
SSBW
LSBW
UGBW
.1dB BW
DG
−3 dB Bandwidth Small Signal
−3 dB Bandwidth Large Signal
−3 dB Bandwidth Unity Gain
.1 dB Bandwidth
VOUT = 0.5 VPP
210
125
290
100
.03%
0.1
MHz
MHz
MHz
MHz
VOUT = 2.0 VPP
95
VOUT = 0.5 VPP, AV = 1 V/V
VOUT = 0.5 VPP
Differential Gain
RL = 150Ω, 4.43 MHz
RL = 150Ω, 4.43 MHz
DP
Differential Phase
deg
TIME DOMAIN RESPONSE
TRS
SR
Rise and Fall Time
Slew Rate
2V Step
2V Step
4
ns
275
400
V/μs
DISTORTION AND NOISE RESPONSE
HD2
HD3
2nd Harmonic Distortion
3rd Harmonic Distortion
2 VPP, 5 MHz
2 VPP, 5 MHz
−67
−67
dBc
dBc
EQUIVALENT INPUT NOISE
VN
Non-Inverting Voltage
Inverting Current
>1 MHz
>1MHz
>1MHz
4.3
6
nV/√Hz
pA/√Hz
pA/√Hz
NICN
ICN
Non-Inverting Current
6
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self heating where TJ > TA. See Application and Implementation for information on temperature
derating of this device. Min/Max ratings are based on product characterization and simulation. Individual parameters are tested as
noted.
6
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Product Folder Links: LMH6723 LMH6724
LMH6723, LMH6724
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SNOSA83I –AUGUST 2003–REVISED AUGUST 2014
±2.5V Electrical Characteristics (continued)
Unless otherwise specified, AV = +2, RF = 1200Ω, RL = 100Ω. Boldface limits apply at temperature extremes.(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC, DC PERFORMANCE
VIO
Input Offset Voltage
±3
±3.4
−0.5
−2.7
−0.7
62
mV
µA
µA
IBN
Input Bias Current
Non-Inverting
±4
±5
IBI
Input Bias Current
Inverting
±4
±5
PSRR
Power Supply Rejection Ratio
DC, 0.5V Step
LMH6723
LMH6724
LMH6723
LMH6724
59
57
dB
58
55
62
CMRR
Common Mode Rejection Ratio
Supply Current (per amplifier)
DC, 0.5V Step
57
53
59
dB
55
52
59
ICC
RL = ∞
1.1
1.3
0.9
mA
MISCELLANEOUS PERFORMANCE
RIN+
RIN−
Input Resistance
Non-Inverting
Inverting
100
500
kΩ
Input Resistance
(Output Resistance of Input Buffer)
Ω
CIN
Input Capacitance
Output Resistance
Output Voltage Range
Non-Inverting
Closed Loop
RL = ∞
1.5
pF
ROUT
VO
0.02
Ω
±1.55
±1.4
±1.65
1.45
V
V
VOL
Output Voltage Range, High
RL = 100Ω
LMH6723
LMH6724
LMH6723
LMH6724
1.35
1.27
1.35
1.26
1.45
Output Voltage Range, Low
RL = 100Ω
−1.25
−1.15
−1.38
−1.38
V
V
−1.25
−1.15
CMVR
IO
Input Voltage Range
Output Current
Common Mode, CMRR > 50 dB
Sourcing
±1.45
70
60
90
mA
Sinking
−30
−30
−60
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6.7 Typical Performance Characteristics
AV = 2, RF = 1200Ω, RL = 100Ω, unless otherwise specified.
1
1
0
V
= 0.5V
PP
OUT
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
V
= 0.5V
PP
OUT
-1
-2
-3
-4
-5
-6
-7
-8
-9
V
= 2V
PP
OUT
V
= 4V
PP
OUT
V
= 1V
PP
OUT
V
= 2V
PP
OUT
V
OUT
= 1V
PP
V
A
= ±2.5V
= 2V/V
S
V
V
A
= ±5V
S
V
= 2V/V
R
= 1200:
F
R = 1200:
F
1
10
100
1000
1
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 1. Frequency Response vs. VOUT, AV = 2
Figure 2. Frequency Response vs. VOUT, AV = 2
4
4
V
= ±2.5V
= 2000:
= 1V/V
V
= ±5V
S
S
R
R
= 2000:
= 1V/V
F
F
V
2
0
2
0
A
A
V
V
= 2V
PP
OUT
V
V
= 4V
PP
OUT
V
-2
-4
-2
-4
= 1V
PP
= 2V
PP
OUT
OUT
V = 1V
OUT PP
V
= 0.5V
PP
OUT
-6
-6
V
OUT
= 0.5V
PP
-8
-8
-10
-10
1
10
100
1000
1
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 3. Frequency Response vs. VOUT, AV = 1
Figure 4. Frequency Response vs. VOUT, AV = 1
1
4
A
= +1, R = 2000:
F
V
V
= ±6V
V
V
= ±5V
S
S
= 2V
PP
0
2
0
OUT
-1
V
= ±2.5V
S
-2
-3
-4
-5
-6
-2
-4
A
V
= 6, R = 500:
F
V
= ±3.3V
S
A
V
= 2, R = 1200:
F
V
= ±5V
S
-6
A
= -1, R = 1200:
F
V
V
A
= 2V
OUT
PP
-8
= 2V/V
V
-10
1
10
100
1000
1
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 6. Frequency Response vs. Supply Voltage
Figure 5. Large Signal Frequency Response
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SNOSA83I –AUGUST 2003–REVISED AUGUST 2014
Typical Performance Characteristics (continued)
AV = 2, RF = 1200Ω, RL = 100Ω, unless otherwise specified.
2500
1400
1200
1000
800
2000
1500
600
1000
500
0
400
200
0
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
10
GAIN (V/V)
GAIN (-V/V)
Figure 7. Suggested RF vs. Gain Non-Inverting
Figure 8. Suggested RF vs. Gain Inverting
2
2
R
= 800:
R
F
= 800:
F
1
0
1
0
-1
-2
-3
-4
-5
-6
-7
-8
-1
-2
-3
-4
-5
-6
-7
-8
R
= 1.2k:
R
= 1200:
F
F
R
F
= 2k:
R
F
= 2000:
V
V
= ±5V
S
V
V
= ±2.5V
S
= 1V
OUT
PP
= 1V
OUT
PP
R
= 100:
L
0.1
1
10
100
1000
0.1
1
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 9. Frequency Response vs. RF
Figure 10. Frequency Response vs. RF
140
130
120
110
100
90
200
160
120
80
130
120
110
100
90
180
140
100
60
Gain
Phase
Gain
Phase
40
20
0
80
-20
80
-40
-80
-120
-160
-200
70
-60
70
60
-100
-140
-180
60
50
50
40
40
0.1
1
10
100
1000 10000 100000 1000000
0.1
1
10
100
1000
10000 100000
Frequency (kHz)
Frequency (kHz)
D001
D002
Figure 11. Open Loop Gain & Phase
Figure 12. Open Loop Gain & Phase
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Typical Performance Characteristics (continued)
AV = 2, RF = 1200Ω, RL = 100Ω, unless otherwise specified.
-40
-45
-50
-55
-60
-65
-70
-75
-80
-35
V
= ±5V
S
V
= ±2.5V
S
f = 5MHz
-40
-45
-50
-55
-60
-65
-70
-75
f = 5MHz
HD2
HD3
HD2
HD3
0
1
2
3
4
(V
5
6
7
8
0
0.5
1
2
2.5
3
1.5
(V
V
)
OUT PP
V
)
OUT PP
Figure 14. HD2 & HD3 vs. VOUT
Figure 13. HD2 & HD3 vs. VOUT
-40
-45
-50
-40
-45
-50
HD3
HD2
-55
-60
-65
-55
-60
-65
HD2
HD3
-70
-70
V
V
= ±2.5V
V
V
= ±5V
S
S
-75
-80
-75
-80
= 2V
= 2V
OUT
PP
OUT
PP
0
10
20
30
40
50
0
10
20
30
40
50
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 15. HD2 & HD3 vs. Frequency
Figure 16. HD2 & HD3 vs. Frequency
2
2
0
-2
0
-2
C
= 100pF, R
OUT
= 24:
= 30:
C
= 100pF, R
= 24:
= 30:
L
L OUT
C
= 47pF, R
OUT
C = 47pF, R
L OUT
L
-4
-4
C
L
= 10pF, R
OUT
= 48:
C
L
= 10pF, R = 48:
OUT
-6
-6
V
= ±2.5V
V
= ±5V
S
S
R
= 1k:||C
R
= 1k:||C
-8
-8
L
L
L
L
V
= .8V
V
= .8V
OUT
PP
OUT
PP
-10
-10
0.1
1
10
100
1000
0.1
1
10
100
1000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 17. Frequency Response vs. CL
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Figure 18. Frequency Response vs. CL
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Typical Performance Characteristics (continued)
AV = 2, RF = 1200Ω, RL = 100Ω, unless otherwise specified.
60
60
50
40
50
40
30
20
10
30
20
10
0
V
= ±2.5V
V = ±5V
S
S
LOAD = 1k:||C
LOAD = 1k:||C
L
L
0
1
10
100
1000
1
10
100
1000
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
Figure 19. Suggested ROUT vs. CL
Figure 20. Suggested ROUT vs. CL
70
80
70
PSRR+
PSRR+
60
50
PSRR-
60
50
40
30
20
10
0
PSRR-
40
30
20
10
0
V
S
= ±2.5V
V
= ±5V
S
1
10
0.001 0.01
100
1
0.1
0.001 0.01
0.1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 21. PSRR vs. Frequency
Figure 22. PSRR vs. Frequency
70
60
100
10
V
= ±5V
S
V
= ±2.5V
S
50
1
40
30
20
V
S
= ±2.5V
0.1
0.01
10
0
V
= ±5V
S
0.001
1
0.001 0.01
0.1
10
100
0.001 0.01
0.1
1
100
10
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 24. CMRR vs. Frequency
Figure 23. Closed Loop Output Resistance
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Typical Performance Characteristics (continued)
AV = 2, RF = 1200Ω, RL = 100Ω, unless otherwise specified.
1
0.03
0.02
0.01
0
0.11
0.09
0.07
0.05
0.03
0.01
-0.01
PHASE
0
-1
GAIN
-0.01
-0.02
-0.03
-2
V
= ±5V
V
V
= ±5V
S
S
f = 4.43MHz
= 0.5 V
OUT
PP
R
= 150:
L
R
= 1.1 k:
F
-3
-0.75 -0.5 -0.25
0
0.25 0.5 0.75
100
FREQUENCY (MHz)
1k
10
OUTPUT OFFSET (V) 100 IRE = 0.714V
Figure 25. Differential Gain & Phase
Figure 26. Channel Matching (LMH6724)
1
-30
-35
-40
0
-45
CHANNEL A
-50
-55
-60
-65
-1
CHANNEL B
-2
V
V
= ±2.5V
S
-70
= 0.5 V
OUT
PP
-75
-80
R
= 1.1 k:
F
-3
1
10
100
1000
100
FREQUENCY (MHz)
1k
10
FREQUENCY (MHz)
Figure 28. Crosstalk (LMH6724)
Figure 27. Channel Matching (LMH6724)
1
2.5
2
Vs = r5V
Vs = r5V
0.75
0.5
1.5
1
0.25
0
0.5
0
-0.25
-0.5
-0.75
-1
-0.5
-1
-1.5
-2
-1.25
-2.5
0
5
10
Time (nS)
15
20
0
5
10 15 20 25 30 35 40 45 50 55
Time (nS)
D001
D001
Figure 29. Output Small Signal Pulse Response
Figure 30. Output Large Signal Pulse Response
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7 Application and Implementation
7.1 Application Information
The LMH6723/LMH6724 is a high speed current feedback amplifier manufactured on Texas Instruments' VIP10
(Vertically Integrated PNP) complimentary bipolar process. LMH6723/LMH6724 offers a unique combination of
high speed and low quiescent supply current making it suitable for a wide range of battery powered and portable
applications that require high performance. This amplifier can operate from 4.5V to 12V nominal supply voltages
and draws only 1 mA of quiescent supply current at 10V supplies (±5V typically). The LMH6723/LMH6724 has no
internal ground reference so single or split supply configurations are both equally useful.
7.2 Typical Application
7.3 Evaluation Boards
Texas Instruments provides the following evaluation boards as a guide for high frequency layout and as an aid in
device testing and characterization. Many of the datasheet plots were measured with these boards.
DEVICE
PACKAGE
BOARD PART NUMBER
LMH6723MA
LMH6723MF
LMH6724MA
SOIC-8
SOT-23
SOIC-8
LMH730227
LMH730216
LMH730036
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7.4 Feedback Resistor Selection
One of the key benefits of a current feedback operational amplifier is the ability to maintain optimum frequency
response independent of gain by using appropriate values for the feedback resistor (RF). The Electrical
Characteristics and Typical Performance plots were generated with an RF of 1200Ω, a gain of +2V/V and ±5V or
±2.5V power supplies (unless otherwise specified). Generally, lowering RF from its recommended value will peak
the frequency response and extend the bandwidth; however, increasing the value of RF will cause the frequency
response to roll off faster. Reducing the value of RF too far below it's recommended value will cause overshoot,
ringing, and eventually, oscillation.
2
R
F
= 800:
1
0
-1
-2
-3
-4
-5
-6
-7
-8
R
= 1200:
F
R
F
= 2000:
V
V
= ±2.5V
S
= 1V
OUT
PP
0.1
1
10
100
1000
FREQUENCY (MHz)
Figure 31. Frequency Response vs. RF
Figure 31 shows the LMH6723/LMH6724's frequency response as RF is varied (RL = 100Ω, AV = +2). This plot
shows that an RF of 800Ω results in peaking. An RF of 1200Ω gives near maximal bandwidth and gain flatness
with good stability. Since each application is slightly different, it is worth experimenting to find the optimal RF for a
given circuit. In general, a value of RF that produces ~0.1 dB of peaking is the best compromise between stability
and maximal bandwidth. Note that it is not possible to use a current feedback amplifier with the output shorted
directly to the inverting input. The buffer configuration of the LMH6723/LMH6724 requires a 2000-Ω feedback
resistor for stable operation. For other gains see the charts Figure 32 and Figure 33. These charts provide a
good place to start when selecting the best feedback resistor value for a variety of gain settings.
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Feedback Resistor Selection (continued)
For more information see Application Note OA-13 which describes the relationship between RF and closed-loop
frequency response for current feedback operational amplifiers. The value for the inverting input impedance for
the LMH6723/LMH6724 is approximately 500 Ω. The LMH6723/LMH6724 is designed for optimum performance
at gains of +1 to +5V/V and −1 to −4V/V. Higher gain configurations are still useful; however, the bandwidth will
fall as gain is increased, much like a typical voltage feedback amplifier.
2500
2000
1500
1000
500
0
1
2
3
4
5
6
7
8
9
10
GAIN (V/V)
Figure 32. RF vs. Non-Inverting Gain
Figure 32 and Figure 33 show the value of RF versus gain. A higher RF is required at higher gains to keep RG
from decreasing too far below the input impedance of the inverting input. This limitation applies to both inverting
and non-inverting configurations. For the LMH6723/LMH6724 the input resistance of the inverting input is
approximately 500Ω and 100Ω is a practical lower limit for RG. The LMH6723/LMH6724 begins to operate in a
gain bandwidth limited fashion in the region where RF must be increased for higher gains. Note that the amplifier
will operate with RG values well below 100 Ω; however, results will be substantially different than predicted from
ideal models. In particular, the voltage potential between the Inverting and Non-Inverting inputs cannot be
expected to remain small.
For inverting configurations the impedance seen by the source is RG || RT. For most sources this limits the
maximum inverting gain since RF is determined by the desired gain as shown in Figure 33. The value of RG is
then RF/Gain. Thus for an inverting gain of −4 V/V the input impedance is equal to 100Ω. Using a termination
resistor, this can be brought down to match a 50-Ω or 75-Ω source; however, a 150Ω source cannot be matched
without a severe compromise in RF.
1400
1200
1000
800
600
400
200
0
1
2
3
4
5
6
7
8
9
10
GAIN (-V/V)
Figure 33. RF vs. Inverting Gain
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7.5 Active Filters
When using any current feedback operational amplifier as an active filter it is necessary to be careful using
reactive components in the feedback loop. Reducing the feedback impedance, especially at higher frequencies,
will almost certainly cause stability problems. Likewise capacitance on the inverting input should be avoided. See
Application Notes OA-07 and OA-26 for more information on Active Filter applications for Current Feedback Op
Amps.
When using the LMH6723/LMH6724 as a low-pass filter the value of RF can be substantially reduced from the
value recommended in the RF vs. Gain charts. The benefit of reducing RF is increased gain at higher
frequencies, which improves attenuation in the stop band. Stability problems are avoided because in the stop
band additional device bandwidth is used to cancel the input signal rather than amplify it. The benefit of this
change depends on the particulars of the circuit design. With a high pass filter configuration reducing RF will
likely result in device instability and is not recommended.
6.8PF
C2
100nF
C1
R
IN
75:
X1
+
-
+
-
R
OUT
75:
R
1.2k:
G
R
F
1.2k:
100nF
C3
6.8PF
C4
Figure 34. Typical Application with Suggested Supply Bypassing
X1
R
OUT
51:
+
-
+
-
CL
10pF
R
IN
51:
RG
1.2k:
R
L
1k:
R
F
1.2k:
Figure 35. Decoupling Capacitive Loads
7.6 Driving Capacitive Loads
Capacitive output loading applications will benefit from the use of a series output resistor as shown in Figure 35.
The charts "Suggested ROUT vs. Cap Load" give a recommended value for selecting a series output resistor for
mitigating capacitive loads. The values suggested in the charts are selected for .5 dB or less of peaking in the
frequency response. This gives a good compromise between settling time and bandwidth. For applications where
maximum frequency response is needed and some peaking is tolerable, the value of ROUT can be reduced
slightly from the recommended values.
There will be amplitude lost in the series resistor unless the gain is adjusted to compensate; this effect is most
noticeable with heavy loads (RL < 150Ω).
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Driving Capacitive Loads (continued)
An alternative approach is to place ROUT inside the feedback loop as shown in Figure 36. This will preserve gain
accuracy, but will still limit maximum output voltage swing.
X1
R
OUT
51:
+
-
+
-
CL
10pF
R
IN
51:
RG
1.2k:
R
1k:
L
R
F
1.2k:
Figure 36. Series Output Resistor Inside Feedback Loop
7.7 Inverting Input Parasitic Capacitance
Parasitic capacitance is any capacitance in a circuit that was not intentionally added. It is produced through
electrical interaction between conductors and can be reduced but never entirely eliminated. Most parasitic
capacitances that cause problems are related to board layout or lack of termination on transmission lines. See
Layout Considerations for hints on reducing problems due to parasitic capacitances on board traces.
Transmission lines should be terminated in their characteristic impedance at both ends.
High speed amplifiers are sensitive to capacitance between the inverting input and ground or power supplies.
This shows up as gain peaking at high frequency. The capacitor raises device gain at high frequencies by
making RG appear smaller. Capacitive output loading will exaggerate this effect.
One possible remedy for this effect is to slightly increase the value of the feedback (and gain set) resistor. This
will tend to offset the high frequency gain peaking while leaving other parameters relatively unchanged. If the
device has a capacitive load as well as inverting input capacitance, using a series output resistor as described in
Driving Capacitive Loads will help.
R
8
R
1:
4
3.5 k:
C
R
11
20:
1
-
680 pF
(2)
+
R
9
R
1:
5
3.5 k:
-
(3)
+
R
10
3.5 k:
R
1:
6
e
in
-
(4)
+
-
(1)
+
R
7
R
3
1:
50:
R
750:
R
3 k:
1
2
OUTPUT
Figure 37. High Output Current Composite Amplifier
When higher currents are required than a single amplifier can provide, the circuit of Figure 37 can be used.
Careful attention to a few key components will optimize performance from this circuit. The first thing to note is
that the buffers need slightly higher value feedback resistors than if the amplifiers were individually configured.
As well, R11 and C1 provide mid circuit frequency compensation to further improve stability. The composite
amplifier has approximately twice the phase delay of a single circuit. The larger values of R8, R9 and R10, as well
as the high frequency attenuation provided by C1 and R11, ensure that the circuit does not oscillate.
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Inverting Input Parasitic Capacitance (continued)
Resistors R4, R5, R6, and R7 are necessary to ensure even current distribution between the amplifiers. Since they
are inside the feedback loop they have no effect on the gain of the circuit. The circuit shown in Figure 37 has a
gain of 5. The frequency response of this circuit is shown in Figure 38.
14
13
12
11
10
9
180
135
GAIN
90
45
PHASE
0
-45
-90
-135
-180
V
= ±5V
S
8
V
= 2.5 V
PP
OUT
R
= 5.6:
L
7
A
= 5
V
6
10
FREQUENCY (MHz)
100
1
Figure 38. Composite Amplifier Frequency Response
7.8 Layout Considerations
Whenever questions about layout arise, use the evaluation board as a guide. Evaluation boards are shipped with
sample requests.
To reduce parasitic capacitances ground and power planes should be removed near the input and output pins.
Components in the feedback loop should be placed as close to the device as possible. For long signal paths
controlled impedance lines should be used, along with impedance matching at both ends.
Bypass capacitors should be placed as close to the device as possible. Bypass capacitors from each rail to
ground are applied in pairs. The larger electrolytic bypass capacitors can be located anywhere on the board;
however, the smaller ceramic capacitors should be placed as close to the device as possible.
7.9 Video Performance
The LMH6723/LMH6724 has been designed to provide good performance with both PAL and NTSC composite
video signals. The LMH6723/LMH6724 is specified for PAL signals. Typically, NTSC performance is marginally
better due to the lower frequency content of the signal. Performance degrades as the loading is increased;
therefore, best performance will be obtained with back terminated loads. The back termination reduces
reflections from the transmission line and effectively masks transmission line and other parasitic capacitances
from the amplifier output stage. Figure 34 shows a typical configuration for driving a 75Ω cable. The amplifier is
configured for a gain of 2 to make up for the 6dB of loss in ROUT
.
7.10 Single 5-V Supply Video
With a 5V supply the LMH6723/LMH6724 is able to handle a composite NTSC video signal, provided that the
signal is AC coupled and level shifted so that the signal is centered around VCC/2.
7.10.1 Application Curves
See Figure 31 through Figure 33 and Figure 38.
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8 Power Supply Recommendations
Follow these steps to determine the maximum power dissipation for the LMH6723/LMH6724:
1. Calculate the quiescent (no-load) power: PAMP = ICC * (VS)
where VS = V+ - V-
2. Calculate the RMS power dissipated in the output stage: PD (rms) = rms ((VS-VOUT)*IOUT) where VOUT and
IOUT are the voltage and current of the external load and Vs is the supply voltage.
3. Calculate the total RMS power: PT = PAMP +PD
The maximum power that the LMH6723/LMH6724 package can dissipate at a given temperature can be derived
with the following equation:
PMAX = (150º - TAMB)/ RθJA
where
•
•
TAMB = Ambient temperature (°C)
θJA = Thermal resistance, from junction to ambient, for a given package (°C/W)
R
(1)
For the SOIC-8 package RθJA is 166°C/W and for the SOT-23-5 it is 230°C/W.
8.1 ESD Protection
The LMH6723/LMH6724 is protected against electrostatic discharge (ESD) on all pins. The LMH6723 will survive
2000V Human Body Model or 200V Machine Model events.
Under closed loop operation the ESD diodes have no effect on circuit performance. There are occasions,
however, when the ESD diodes will be evident. If the LMH6723/LMH6724 is driven into a slewing condition the
ESD diodes will clamp large differential voltages until the feedback loop restores closed loop operation. Also, if
the device is powered down and a large input signal is applied, the ESD diodes will conduct.
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9 Device and Documentation Support
9.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 1. Related Links
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
PARTS
PRODUCT FOLDER
SAMPLE & BUY
LMH6723
LMH6724
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
9.2 Trademarks
All trademarks are the property of their respective owners.
9.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
9.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
10 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
6-Nov-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
LMH6723 MWC
LMH6723MA
ACTIVE WAFERSALE
YS
D
0
8
1
TBD
Call TI
Call TI
-40 to 85
-40 to 85
NRND
ACTIVE
ACTIVE
SOIC
SOIC
SOIC
95
Non-RoHS
& Green
Call TI
SN
Level-1-235C-UNLIM
LMH67
23MA
LMH6723MA/NOPB
LMH6723MAX/NOPB
D
D
8
8
95
RoHS & Green
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 85
-40 to 85
LMH67
23MA
2500 RoHS & Green
1000 RoHS & Green
SN
LMH67
23MA
LMH6723MF/NOPB
LMH6723MFX
ACTIVE
NRND
SOT-23
SOT-23
DBV
DBV
5
5
SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 85
-40 to 85
AB1A
3000
Non-RoHS
& Green
Call TI
AB1A
LMH6723MFX/NOPB
LMH6724MA/NOPB
ACTIVE
ACTIVE
SOT-23
SOIC
DBV
D
5
8
3000 RoHS & Green
95 RoHS & Green
2500 RoHS & Green
SN
SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 85
-40 to 85
AB1A
LMH67
24MA
LMH6724MAX/NOPB
ACTIVE
SOIC
D
8
SN
Level-1-260C-UNLIM
-40 to 85
LMH67
24MA
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
6-Nov-2021
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Apr-2022
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LMH6723MAX/NOPB
LMH6723MF/NOPB
LMH6723MFX
SOIC
SOT-23
SOT-23
SOT-23
SOIC
D
8
5
5
5
8
2500
1000
3000
3000
2500
330.0
178.0
178.0
178.0
330.0
12.4
8.4
6.5
3.2
3.2
3.2
6.5
5.4
3.2
3.2
3.2
5.4
2.0
1.4
1.4
1.4
2.0
8.0
4.0
4.0
4.0
8.0
12.0
8.0
Q1
Q3
Q3
Q3
Q1
DBV
DBV
DBV
D
8.4
8.0
LMH6723MFX/NOPB
LMH6724MAX/NOPB
8.4
8.0
12.4
12.0
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Apr-2022
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LMH6723MAX/NOPB
LMH6723MF/NOPB
LMH6723MFX
SOIC
SOT-23
SOT-23
SOT-23
SOIC
D
8
5
5
5
8
2500
1000
3000
3000
2500
356.0
208.0
208.0
208.0
356.0
356.0
191.0
191.0
191.0
356.0
35.0
35.0
35.0
35.0
35.0
DBV
DBV
DBV
D
LMH6723MFX/NOPB
LMH6724MAX/NOPB
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Apr-2022
TUBE
*All dimensions are nominal
Device
Package Name Package Type
Pins
SPQ
L (mm)
W (mm)
T (µm)
B (mm)
LMH6723MA
LMH6723MA
D
D
D
D
SOIC
SOIC
SOIC
SOIC
8
8
8
8
95
95
95
95
495
495
495
495
8
8
8
8
4064
4064
4064
4064
3.05
3.05
3.05
3.05
LMH6723MA/NOPB
LMH6724MA/NOPB
Pack Materials-Page 3
PACKAGE OUTLINE
DBV0005A
SOT-23 - 1.45 mm max height
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR
C
3.0
2.6
0.1 C
1.75
1.45
1.45
0.90
B
A
PIN 1
INDEX AREA
1
2
5
(0.1)
2X 0.95
1.9
3.05
2.75
1.9
(0.15)
4
3
0.5
5X
0.3
0.15
0.00
(1.1)
TYP
0.2
C A B
NOTE 5
0.25
GAGE PLANE
0.22
0.08
TYP
8
0
TYP
0.6
0.3
TYP
SEATING PLANE
4214839/G 03/2023
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Refernce JEDEC MO-178.
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.25 mm per side.
5. Support pin may differ or may not be present.
www.ti.com
EXAMPLE BOARD LAYOUT
DBV0005A
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
PKG
5X (1.1)
1
5
5X (0.6)
SYMM
(1.9)
2
3
2X (0.95)
4
(R0.05) TYP
(2.6)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:15X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
EXPOSED METAL
EXPOSED METAL
0.07 MIN
ARROUND
0.07 MAX
ARROUND
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4214839/G 03/2023
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
DBV0005A
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
PKG
5X (1.1)
1
5
5X (0.6)
SYMM
(1.9)
2
3
2X(0.95)
4
(R0.05) TYP
(2.6)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:15X
4214839/G 03/2023
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
PACKAGE OUTLINE
D0008A
SOIC - 1.75 mm max height
SCALE 2.800
SMALL OUTLINE INTEGRATED CIRCUIT
C
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A
PIN 1 ID AREA
6X .050
[1.27]
8
1
2X
.189-.197
[4.81-5.00]
NOTE 3
.150
[3.81]
4X (0 -15 )
4
5
8X .012-.020
[0.31-0.51]
B
.150-.157
[3.81-3.98]
NOTE 4
.069 MAX
[1.75]
.010 [0.25]
C A B
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
[0.11-0.25]
0 - 8
.016-.050
[0.41-1.27]
DETAIL A
TYPICAL
(.041)
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
www.ti.com
EXAMPLE BOARD LAYOUT
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
SEE
DETAILS
1
8
8X (.024)
[0.6]
SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
EXPOSED
METAL
EXPOSED
METAL
.0028 MAX
[0.07]
.0028 MIN
[0.07]
ALL AROUND
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
1
8
8X (.024)
[0.6]
SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
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