LMH9235 [TI]
具有集成平衡-非平衡变压器的 3.3GHz 至 4.2GHz 单端至差分放大器;
| 型号： | LMH9235 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有集成平衡-非平衡变压器的 3.3GHz 至 4.2GHz 单端至差分放大器 变压器 放大器 |
| 文件： | 总22页 (文件大小：1913K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LMH9235
ZHCSLB8C –MAY 2020 –REVISED MAY 2021
具有集成平衡-非平衡变压器的LMH9235 3.3GHz 至4.2GHz 单端至差分放大器
1 特性
3 说明
• 单通道、单端输入至差分输出射频增益块放大器
• 直接支持3.3GHz –3.8GHz 频带或通过外部匹配
组件支持3.7GHz –4.2GHz 频带
• 在整个频带内具有17.5dB 的典型增益
• 低于3dB 噪声系数
• 34.5dBm OIP3
• 18dBm 输出P1dB
• 3.3V 单电源供电，具有270mW 功耗
• 工作温度高达105°C TC
LMH9235 器件是一款高性能、单通道、单端输入至差
分输出接收射频增益块放大器，支持 3.6GHz 中心频
段。该器件非常适合支持下一代 5G AAS 或小型蜂窝
应用的要求，其中 LNA 增益不足以驱动模拟前端
(AFE) 的满量程。该射频放大器可提供 17dB 的典型增
益，并具有 34dBm 输出 IP3 的出色线性性能，同时在
整个 1dB 带宽内保持大约 3dB 的噪声系数。该器件在
单端输入以及差分输出端内部匹配 50Ω 阻抗，可轻松
与射频采样或零中频模拟前端(AFE) 相连。
2 应用
该器件使用 3.3V 单电源供电，其有功功率约为
270mW，因此适用于高密度 5G 大规模 (MIMO) 应
用。此外，该器件采用节省空间的 2mm x 2mm、12
引脚 QFN 封装。该器件的额定工作温度高达 105°C，
可提供稳健的系统设计。该器件具有符合 JEDEC 标准
的 1.8V 断电引脚，可为该器件快速断电和上电，适用
于时分双工(TDD) 系统。
• 适用于高GSPS ADC 的差分驱动器
• 单端到差分转换
• 平衡-非平衡变压器替代产品
• 射频增益块
• 小型蜂窝或m-MIMO 基站
• 5G 有源天线系统(AAS)
• 无线蜂窝基站
器件信息(1)
• 低成本无线电设备
封装尺寸（标称值）
器件型号
LMH9235
封装
WQFN (12)
2.00mm × 2.00mm
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附
录。
f = 3.3 GHz œ 3.8 GHz
Analog Front-End
LNA
LMH9235
ADC
ROUT = 50 Ω
RIN = 50 Ω
LMH9235：单端至差分放大器
本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问
www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SBOS996
LMH9235
ZHCSLB8C –MAY 2020 –REVISED MAY 2021
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Table of Contents
8 Application and Implementation....................................9
8.1 Application Information............................................... 9
8.2 Typical Application.................................................... 10
9 Power Supply Recommendations................................13
10 Layout...........................................................................14
10.1 Layout Guidelines................................................... 14
10.2 Layout Example...................................................... 14
11 Device and Documentation Support..........................15
11.1 Documentation Support.......................................... 15
11.2 接收文档更新通知................................................... 15
11.3 支持资源..................................................................15
11.4 Trademarks............................................................. 15
11.5 Electrostatic Discharge Caution..............................15
11.6 术语表..................................................................... 15
12 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................4
6.5 Electrical Characteristics.............................................5
6.6 Typical Characteristics................................................6
7 Detailed Description........................................................8
7.1 Overview.....................................................................8
7.2 Functional Block Diagram...........................................9
7.3 Feature Description.....................................................9
7.4 Device Functional Modes............................................9
Information.................................................................... 15
4 Revision History
注：以前版本的页码可能与当前版本的页码不同
Changes from Revision B (June 2020) to Revision C (May 2021)
Page
• 更新了整个文档中的表格、图和交叉参考的编号格式.........................................................................................1
Changes from Revision A (May 2020) to Revision B (June 2020)
Page
• 在“特性”部分添加了具有外部匹配组件的3.7GHz –4.2GHz 频带............................................................... 1
• Changed the POUT/TONE measurements of Figure 6, Figure 7 and Figure 8 From: 1-MHz tone spacing To:
10-MHz tone spacing .........................................................................................................................................6
• Added Shifting the Operating Band section......................................................................................................12
• Added Design Requirements and Procedure section.......................................................................................12
Changes from Revision * (May 2020) to Revision A (June 2020)
Page
• 将状态从产品预发布更改为量产数据................................................................................................................ 1
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5 Pin Configuration and Functions
NC
12
VDD
11
VSS 1
INP 2
10 VSS
9 OUTP
8 OUTM
Thermal Pad
3
VSS
VSS 4
7
VSS
5
6
VSS
PD
图5-1. RRL Package 12-Pin WQFN Top View
表5-1. Pin Functions
PIN
NAME
I/O
DESCRIPTION
NO.
1
VSS
INP
Power
Input
Ground
2
RF single-ended input into amplifier
3
VSS
VSS
VSS
PD
Power
Power
Power
Input
Ground
4
Ground
5
Ground
6
Power down connection. PD = 0 V = normal operation; PD = 1.8 V = power off mode.
7
VSS
OUTM
OUTP
VSS
VDD
NC
Power
Output
Output
Power
Power
—
Ground
8
RF differential output negative
RF differential output positive
Ground
9
10
11
Positive supply voltage (3.3 V)
Do not connect this pin
Connect the thermal pad to Ground
12
Thermal Pad
—
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
MAX
3.6
UNIT
V
Supply voltage VDD
RF Pins
INP, OUTP, OUTM
VDD
V
Continuous
wave (CW)
input
fIN = 3.55 GHz at INP
25
dBm
Digital Input PIN PD
VDD
150
150
V
–0.3
–65
TJ
Junction temperature
Storage temperature
°C
°C
Tstg
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
6.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001, allpins(1)
±1000
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC
specificationJESD22-C101, all pins(2)
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
3.15
–40
–40
NOM
MAX
3.45
105
UNIT
V
VDD
TC
Supply voltage
3.3
Case (bottom) temperature
Junction temperature
°C
TJ
125
°C
6.4 Thermal Information
LMH9235
THERMAL METRIC(1)
RRL PKG
12-PIN WQFN
74.8
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
72.4
37.1
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
3.2
ΨJT
37.1
ΨJB
RθJC(bot)
14.2
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
TA = 25°C, VDD = 3.3V, frequency = 3.55 GHz, single-ended input impedance (RIN) = 50 Ω, differential output load (RLOAD) =
50 Ω unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RF PERFORMANCE - LMH9235
FRF
RF frequency range
1-dB Bandwidth
Gain
3300
3800
MHz
MHz
dB
BW1dB
S21
700
17.5
3
NF
Noise Figure
Output P1dB
dB
RS = 50 Ω
OP1dB
18
dBm
RLOAD = 50 Ω differential
fin = 3.55 GHz ± 5 MHz spacing, POUT
TONE = 2 dBm
/
OIP3
Output IP3
34.5
dBm
Differential output gain Imbalance
Differential output phase Imbalance
Input return loss (1)
±0.5
±3
dB
degree
dB
S11
f = 3.3 - 3.8 GHz
f = 3.3 - 3.8 GHz
f = 3.3 - 3.8 GHz
–9
–10
–40
30
S22
Output return loss (1)
dB
S12
Reverse isolation
dB
CMRR
Common Mode Rejection Ratio (2)
dB
Switching and Digital input characteristics
tON
tOFF
VIH
VIL
Turn-ON time
50% VPD to 90% RF
50% VPD to 10% RF
PD pin
0.5
0.2
µs
µs
V
Turn-OFF time
High-Level Input Voltage
Low-Level Input Voltage
1.4
PD pin
0.5
V
DC current and Power Consumption
IVDD_ON Supply Current - active
VPD = 0 V
80
10
mA
mA
mW
IVDD_PD Supply Current - power down
VPD = 1.8 V
Pdis
Power Dissipation - active
270
(1) Reference impedance: Input = 50 Ω single-ended, Output = 50 Ω differential
(2) CMRR is calculated using (S21-S31)/(S21+S31) for Receive (1 is input port, 2 & 3 are differential output ports)
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6.6 Typical Characteristics
20
20
18
16
14
12
18
16
14
TA = -40 o
C
TA = 25 o
TA = 85 o
C
C
VDD = 3.15V
VDD = 3.3V
VDD = 3.45V
TA = 105 o
C
12
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
.
.
图6-1. Gain vs Frequency and Temperature
图6-2. Gain vs Frequency and Supply Voltage
0
TA = -40 o
C
-2
-6
TA = 25 o
TA = 85 o
C
C
-2
-4
TA = 105 o
C
-10
-14
-18
-22
-26
-30
-34
-6
-8
-10
-12
-14
TA = -40 o
C
TA = 25 o
TA = 85 o
C
C
TA = 105 o
C
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
.
.
图6-4. Output Return Loss vs Frequency
图6-3. Input Return Loss vs Frequency
0
40
TA = -40 o
C
TA = 25 o
TA = 85 o
C
C
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
38
36
34
32
30
28
26
TA = 105 o
C
TA = -40 o
C
TA = 25 o
TA = 85 o
C
C
TA = 105 o
C
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
.
POUT/TONE = 2 dBm, 10-MHz tone spacing
图6-5. Reverse Isolation vs Frequency
图6-6. Output IP3 vs Frequency and Temperature
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6.6 Typical Characteristics (continued)
40
38
36
34
32
40
38
36
34
32
30
28
26
30
TA = -40 o
C
VDD = 3.15V
VDD = 3.3V
VDD = 3.45V
TA = 25 o
TA = 85 o
C
C
28
TA = 105 o
C
26
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
0
2
4
6
8
10
12
Output Power / Tone (dBm)
f = 3550 MHz, 10-MHz tone spacing
图6-8. Output IP3 vs Output Power per Tone
POUT/TONE = 2 dBm, 10-MHz tone spacing
图6-7. Output IP3 vs Frequency and Supply Voltage
40
22
38
36
34
32
20
18
16
14
12
30
TA = -40 o
C
Tone Spacing = 1 MHz
Tone Spacing = 10 MHz
Tone Spacing = 100 MHz
TA = 25 o
TA = 85 o
C
C
28
TA = 105 o
C
26
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
POUT/TONE = 2 dBm
.
图6-9. Output IP3 vs Frequency and Tone Spacing
图6-10. Output P1dB vs Frequency and Temperature
22
6
TA = -40 o
C
TA = 25 o
TA = 85 o
C
C
5
4
3
2
1
0
20
18
16
TA = 105 o
C
14
VDD = 3.15V
VDD = 3.3V
VDD = 3.45V
12
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
.
ZSOURCE = 50 Ω
图6-11. Output P1dB vs Frequency and Supply Voltage
图6-12. Noise Figure vs Frequency and Temperature
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6.6 Typical Characteristics (continued)
50
2
1.5
1
45
40
35
30
0.5
0
-0.5
-1
TA = -40 o
C
TA = -40 o
C
TA = 25 o
TA = 85 o
C
C
TA = 25 o
TA = 85 o
C
C
25
-1.5
-2
TA = 105 o
C
TA = 105 o
C
20
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
.
.
图6-13. CMRR vs Frequency
图6-14. Gain Imbalance vs Frequency and Temperature
5
TA = -40 o
C
TA = 25 o
TA = 85 o
C
C
4
3
TA = 105 o
C
2
1
0
-1
-2
-3
-4
-5
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
.
图6-15. Phase Imbalance vs Frequency and Temperature
7 Detailed Description
7.1 Overview
The LMH9235 device is a single-ended input to differential output narrow-band RF amplifier that is used in
receiver applications. The LMH9235 provides ≈ 17 dB fixed power gain with excellent linearity and noise
performance across 1 dB bandwidth of the 3.55 GHz center frequency. The device is internally matched for 50 Ω
impedance at both the single-ended input as well as the differential output, as shown in 节8.
The LMH9235 has on-chip active bias circuitry to maintain device performance over a wide temperature and
supply voltage range. The included power down function allows the amplifier to shut down saving power when
the amplifier is not needed. Fast shut down and start up enable the amplifier to be used in a host of TDD
applications.
Operating on a single 3.3 V supply and consuming ≈80 mA of typical supply current, the device is available in a
2 mm x 2 mm 12-pin QFN package.
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7.2 Functional Block Diagram
AVDD = +3.3V
Active Bias and
Power Down (PD)
Temperature
Compensation
Balanced RF OUTP (0•)
Single-Ended RF Input (INP)
Balanced RF OUTM (180•)
ZIN = 50-Ω match
AVSS (GND)
ZOUT(DIFF) = 50-Ω match
图7-1. Functional Block Diagram
7.3 Feature Description
The LMH9235 device is single-ended to differential RF amplifier for narrow band active balun implementation.
The device integrates the functionality of a single-ended RF amplifier and passive balun in traditional receive
applications achieving small form factor with comparable linearity and noise performance, as shown in 图7-2.
The active balun implementation coupled with higher operating temperature of 105°C allows for more robust
receiver system implementation compared to passive balun that is prone to reliability failures at high
temperatures. The high temperature operation is achieved by the on-chip active bias circuitry which maintains
device performance over a wide temperature and supply voltage range.
LMH9235
INP
OUTP
OUTM
GND
图7-2. Single-Ended Input to Differential Output, Active Balun Implementation
7.4 Device Functional Modes
The LMH9235 features a PD pin which should be connected to GND for normal operation. To power down the
device, connect the PD pin to a logic high voltage of 1.8 V.
8 Application and Implementation
备注
以下应用部分中的信息不属于TI 器件规格的范围，TI 不担保其准确性和完整性。TI 的客 户应负责确定
器件是否适用于其应用。客户应验证并测试其设计，以确保系统功能。
8.1 Application Information
The LMH9235 device is a single-ended, 50 Ω input to differential 50 Ω output RF gain block amplifier, used in
the receive path of a 3.55 GHz center frequency, 5G, TDD m-MIMO or small cell base station. The device
replaces the traditional single-ended RF amplifier and passive balun offering a smaller footprint solution to the
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customer. TI recommends following good RF layout and grounding techniques to maximize the device
performance.
8.2 Typical Application
8.2.1 Matching to a 100 ΩAFE
A typical application of the LMH9235 device driving an AFE is shown in 图8-1.
f = 3.3 œ 3.8 GHz
f
ZOUT = 50 Ω (diff)
ZLOAD
Analog Front-End
C4
C5
C2
C1
L1
L2
LNA
ADC
LMH9235
C3
ZLOAD
ZIN = 50 Ω
Output Matching
Network
图8-1. LMH9235 in Receive Chain Driving an Analog Front-End
8.2.1.1 Design Requirements
ZLOAD represents the impedance of the AFE. With a matching network comprising of L1, L2, C2, and C3 as
shown, the LMH9235 is matched to the impedance of AFE. The capacitors C1, C4, and C5 are for dc-blocking
purpose.
8.2.1.2 Detailed Design Procedure
The table shows the matching network components for 50 Ω (differential) and 100 Ω (differential) AFE
impedances.
表8-1. Matching Network Component Values
Component
C1
Value for ZLOA D = 50 Ω(differential)
Value for ZLOAD = 100 Ω(differential)
22 pF
22 pF
1.5 pF
OPEN
4.3 nH
22 pF
C2, C3
L1
SHORT
OPEN
OPEN
22 pF
L2
C4, C5
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8.2.1.3 Application Curves
The graphs given below show the gain, input return loss and output return loss of the design with different AFE
terminations.
20
18
16
14
12
0
-2
50-W without matching components
100-W with matching components
-4
-6
-8
-10
-12
-14
50-W without matching components
100-W with matching components
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
图8-2. Gain vs Frequency for Different
图8-3. Input Return Loss vs Frequency for
Terminations
Different Terminations
0
-5
-10
-15
-20
-25
-30
-35
-40
50-W without matching components
100-W with matching components
-45
-50
3200 3300 3400 3500 3600 3700 3800 3900 4000
Frequency (MHz)
图8-4. Output Return Loss vs Frequency for Different Terminations
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8.2.2 Shifting the Operating Band
It is possible to tune the frequency band of operation of this chip by a simple external network at the input as
shown in 图 8-1. In this example, with the help of 2 components at the input, the frequency band is shifted to 3.7
- 4.2 GHz.
f = 3.7 œ 4.2 GHz
f
Network to shift the
operating band
ZOUT = 50 Ω (diff)
Analog Front-End
C4
C0
LNA
ADC
LMH9235
L0
C5
ZIN = 50 Ω
图8-5. Shifting the Operating Band
8.2.2.1 Design Requirements and Procedure
The components C0 and L0 are meant to shift the operating band from 3.3 - 3.8 GHz to 3.7 - 4.2 GHz. The
capacitors C4, and C5 are for dc-blocking purpose. The values of these components are given in the table
below.
表8-2. Matching Network Component Values
Component
Value
C0
L0
2 pF
2 nH
C4
LC5
22 pF
22 pF
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8.2.2.2 Application Curves
The graphs given below show the gain, input and output return loss and OIP3 of the design shown in 图8-1.
20
18
16
14
12
10
0
-5
-10
-15
-20
-25
-30
-35
-40
TA = -40 o
C
TA = -40 o
C
TA = 25 o
C
TA = 25 o
C
TA = 105 o
C
TA = 105 o
C
3700
3800
3900 4000
Frequency (MHz)
4100
4200
3700
3800
3900 4000
Frequency (MHz)
4100
4200
图8-6. Gain vs Frequency
图8-7. Input Return Loss vs Frequency
0
-5
40
TA = -40 o
TA = 25 o
TA = 105 o
C
C
C
38
36
34
32
30
28
26
24
22
20
-10
-15
-20
-25
-30
TA = -40 o
C
TA = 25 o
C
TA = 105 o
C
3700
3800
3900 4000
Frequency (MHz)
4100
4200
3700
3800
3900 4000
Frequency (MHz)
4100
4200
图8-8. Output Return Loss vs Frequency
图8-9. Output IP3 vs Frequency and Temperature
9 Power Supply Recommendations
The LMH9235 device operates on a common nominal 3.3-V supply voltage. It is recommended to isolate the
supply voltage through decoupling capacitors placed close to the device. Select capacitors with self-resonant
frequency above the application frequency. When multiple capacitors are used in parallel to create a broadband
decoupling network, place the capacitor with the higher self-resonant frequency closer to the device.
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Product Folder Links: LMH9235
LMH9235
ZHCSLB8C –MAY 2020 –REVISED MAY 2021
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10 Layout
10.1 Layout Guidelines
When designing with an RF amplifier operating in the frequency range 3.3 GHz to 3.8 GHz with relatively high
gain, certain board layout precautions must be taken to ensure stability and optimum performance. TI
recommends that the LMH9235 board be multi-layered to improve thermal performance, grounding, and power-
supply decoupling. 图10-1 shows a good layout example. In this figure, only the top signal layer is shown.
• Excellent electrical connection from the thermal pad to the board ground is essential. Use the recommended
footprint, solder the pad to the board, and do not include a solder mask under the pad.
• Connect the pad ground to the device terminal ground on the top board layer.
• Ensure that ground planes on the top and any internal layers are well stitched with vias.
• Design the input and output RF traces for appropriate impedance. TI recommends grounded coplanar
waveguide (GCPW) type transmission lines for the RF traces. Use a PCB trace width calculator tool to design
the transmission lines.
• Avoid routing clocks and digital control lines near RF signal lines.
• Do not route RF or DC signal lines over noisy power planes.
• Place supply decoupling caps close to the device.
• The differential output traces must be symmetrical in order to achieve the best differential balance and
linearity performance.
See the LMH9235 Evaluation Module user's guide for more details on board layout and design.
10.2 Layout Example
Supply bypass
caps close to the
device
Device
Matched differential
output lines
Stitched
vias
图10-1. Layout Showing Matched Differential Traces and Supply Decoupling
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LMH9235
ZHCSLB8C –MAY 2020 –REVISED MAY 2021
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• Texas Instruments, LMH9235RRLEVM EU Declaration of Conformity (DoC).
• Texas Instruments, LMH9235 Evaluation Module User's Guide.
11.2 接收文档更新通知
要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册，即可每周接收产品信息更
改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
11.3 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅
TI 的《使用条款》。
11.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.6 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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Product Folder Links: LMH9235
PACKAGE OPTION ADDENDUM
www.ti.com
9-Aug-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
LMH9235IRRLR
ACTIVE
WQFN
RRL
12
3000 RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 105
35BO
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Aug-2021
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LMH9235IRRLR
WQFN
RRL
12
3000
180.0
8.4
2.2
2.2
1.2
4.0
8.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Aug-2021
*All dimensions are nominal
Device
Package Type Package Drawing Pins
WQFN RRL 12
SPQ
Length (mm) Width (mm) Height (mm)
213.0 191.0 35.0
LMH9235IRRLR
3000
Pack Materials-Page 2
PACKAGE OUTLINE
RRL0012A
WQFN - 0.8 mm max height
S
C
A
L
E
5
.
0
0
0
PLASTIC QUAD FLATPACK - NO LEAD
2.1
1.9
A
B
PIN 1 INDEX AREA
2.1
1.9
0.8
0.7
C
SEATING PLANE
0.08 C
0.05
0.00
2X 0.5
SYMM
EXPOSED
THERMAL PAD
(0.2) TYP
(0.3) TYP
7
5
6
4
2X 1.5
SYMM
13
0.8 0.1
8X 0.5
10
1
0.3
0.2
12X
12
11
PIN 1 ID
0.1
C A B
0.35
0.25
12X
0.05
4224942/A 04/2019
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
RRL0012A
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(
0.8)
SYMM
12
SEE SOLDER MASK
DETAIL
12X (0.5)
11
10
12X (0.25)
1
SYMM
(1.9)
13
8X (0.5)
(R0.05) TYP
4
7
(
0.2) TYP
VIA
6
5
(1.9)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 20X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
METAL UNDER
SOLDER MASK
METAL EDGE
EXPOSED METAL
SOLDER MASK
OPENING
EXPOSED
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4224942/A 04/2019
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
RRL0012A
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(
0.76)
11
12X (0.5)
12
12X (0.25)
10
1
SYMM
(1.9)
13
8X (0.5)
4
7
(R0.05) TYP
5
6
SYMM
(1.9)
SOLDER PASTE EXAMPLE
BASED ON 0.125 MM THICK STENCIL
SCALE: 20X
EXPOSED PAD 13
90% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
4224942/A 04/2019
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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