LMP7702MMX/NOPB [TI]
精密 CMOS 输入 RRIO 宽电源电压范围双通道放大器 | DGK | 8 | -40 to 125;型号: | LMP7702MMX/NOPB |
厂家: | TEXAS INSTRUMENTS |
描述: | 精密 CMOS 输入 RRIO 宽电源电压范围双通道放大器 | DGK | 8 | -40 to 125 放大器 光电二极管 运算放大器 放大器电路 |
文件: | 总35页 (文件大小:1221K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LMP7701, LMP7702, LMP7704
www.ti.com
SNOSAI9H –SEPTEMBER 2005–REVISED MARCH 2013
LMP7701/LMP7702/LMP7704 Precision, CMOS Input, RRIO, Wide Supply Range Amplifiers
Check for Samples: LMP7701, LMP7702, LMP7704
1
FEATURES
DESCRIPTION
The LMP7701/LMP7702/LMP7704 are single, dual,
and quad low offset voltage, rail-to-rail input and
output precision amplifiers each with a CMOS input
23
•
Unless Otherwise Noted,
Typical Values at VS = 5V
–
Input Offset Voltage (LMP7701): ±200 µV
(max)
stage and
a wide supply voltage range. The
LMP7701/LMP7702/LMP7704 are part of the LMP™
precision amplifier family and are ideal for sensor
interface and other instrumentation applications.
–
Input Offset Voltage (LMP7702/LMP7704):
±220 µV (max)
–
–
–
–
–
–
–
–
–
–
–
–
Input Bias Current: ±200 fA
Input Bias Current: ±200 fA
Input Voltage Noise: 9 nV/√Hz
CMRR: 130 dB
The specified low offset voltage of less than ±200 µV
along with the specified low input bias current of less
than ±1 pA make the LMP7701 ideal for precision
applications. The LMP7701/LMP7702/LMP7704 are
built utilizing VIP50 technology, which allows the
combination of a CMOS input stage and a 12V
common mode and supply voltage range. This makes
the LMP7701/LMP7702/LMP7704 great choices in
many applications where conventional CMOS parts
cannot operate under the desired voltage conditions.
Open Loop Gain: 130 dB
Temperature Range: −40°C to 125°C
Unity Gain Bandwidth: 2.5 MHz
Supply Current (LMP7701): 715 µA
Supply Current (LMP7702): 1.5 mA
Supply Current (LMP7704): 2.9 mA
Supply Voltage Range: 2.7V to 12V
Rail-to-Rail Input and Output
The LMP7701/LMP7702/LMP7704 each have a rail-
to-rail input stage that significantly reduces the CMRR
glitch commonly associated with rail-to-rail input
amplifiers. This is achieved by trimming both sides of
the complimentary input stage, thereby reducing the
difference between the NMOS and PMOS offsets.
The output of the LMP7701/LMP7702/LMP7704
swings within 40 mV of either rail to maximize the
signal dynamic range in applications requiring low
supply voltage.
APPLICATIONS
•
•
•
•
•
•
High Impedance Sensor Interface
Battery Powered Instrumentation
High Gain Amplifiers
DAC Buffer
The LMP7701 is offered in the space saving 5-Pin
SOT-23 and 8-Pin SOIC package. The LMP7702 is
offered in the 8-Pin SOIC and 8-Pin VSSOP package.
The quad LMP7704 is offered in the 14-Pin SOIC and
14-Pin TSSOP package. These small packages are
ideal solutions for area constrained PC boards and
portable electronics.
Instrumentation Amplifier
Active Filters
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
3
LMP is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2013, Texas Instruments Incorporated
LMP7701, LMP7702, LMP7704
SNOSAI9H –SEPTEMBER 2005–REVISED MARCH 2013
www.ti.com
TYPICAL APPLICATION
R
R
V
1
+
V
-
R
S
I = (V2 œ V1)
A
1
RS
+
-
V
+
V
Z
LOAD
-
R
R
V
2
A
2
+
-
V
Figure 1. Precision Current Source
(1)(2)
Absolute Maximum Ratings
ESD Tolerance
(3)
Human Body Model
Machine Model
2000V
200V
Charge-Device Model
1000V
VIN Differential
±300 mV
Supply Voltage (VS = V+ – V−)
Voltage at Input/Output Pins
Input Current
13.2V
V++ 0.3V, V− − 0.3V
10 mA
Storage Temperature Range
−65°C to +150°C
+150°C
(4)
Junction Temperature
Soldering Information
Infrared or Convection (20 sec)
235°C
Wave Soldering Lead Temp. (10 sec)
260°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics Tables.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(3) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
(4) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
2
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Product Folder Links: LMP7701 LMP7702 LMP7704
LMP7701, LMP7702, LMP7704
www.ti.com
SNOSAI9H –SEPTEMBER 2005–REVISED MARCH 2013
(1)
Operating Ratings
Temperature Range
(2)
−40°C to +125°C
2.7V to 12V
265°C/W
Supply Voltage (VS = V+ – V−)
(2)
Package Thermal Resistance (θJA
)
5-Pin SOT-23
8-Pin SOIC
190°C/W
8-Pin VSSOP
14-Pin SOIC
14-Pin TSSOP
235°C/W
145°C/W
122°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics Tables.
(2) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
(1)
3V Electrical Characteristics
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 3V, V− = 0V, VCM = V+/2, and RL > 10 kΩ to V+/2.
Boldface limits apply at the temperature extremes.
(2)
(3)
(2)
Parameter
Test Conditions
Min
Typ
±37
Max
Units
μV
VOS
Input Offset Voltage
LMP7701
±200
±500
LMP7702/LMP7704
±56
±220
±520
(4)
TCVOS
IB
Input Offset Voltage Temperature Drift
Input Bias Current
±1
±5
μV/°C
pA
(4) (5)
±0.2
±1
±50
−40°C ≤ TA ≤ 85°C
(4) (5)
±0.2
±1
−40°C ≤ TA ≤ 125°C
±400
IOS
Input Offset Current
40
fA
CMRR
Common Mode Rejection Ratio
0V ≤ VCM ≤ 3V
86
130
LMP7701
80
dB
0V ≤ VCM ≤ 3V
LMP7702/LMP7704
2.7V ≤ V+ ≤ 12V, Vo = V+/2
84
78
130
98
PSRR
CMVR
AVOL
Power Supply Rejection Ratio
Common Mode Voltage Range
Open Loop Voltage Gain
86
82
dB
V
CMRR ≥ 80 dB
CMRR ≥ 77 dB
–0.2
–0.2
3.2
3.2
RL = 2 kΩ (LMP7701)
VO = 0.3V to 2.7V
100
96
114
114
124
RL = 2 kΩ (LMP7702/LMP7704)
VO = 0.3V to 2.7V
100
94
dB
RL = 10 kΩ
100
VO = 0.2V to 2.8V
96
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the
Statistical Quality Control (SQC) method.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not specified on shipped
production material.
(4) This parameter is specified by design and/or characterization and is not tested in production.
(5) Positive current corresponds to current flowing into the device.
Copyright © 2005–2013, Texas Instruments Incorporated
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3
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SNOSAI9H –SEPTEMBER 2005–REVISED MARCH 2013
www.ti.com
3V Electrical Characteristics (1) (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 3V, V− = 0V, VCM = V+/2, and RL > 10 kΩ to V+/2.
Boldface limits apply at the temperature extremes.
(2)
(3)
(2)
Parameter
Test Conditions
RL = 2 kΩ to V+/2
Min
Typ
40
Max
Units
VOUT
Output Voltage Swing High
80
LMP7701
120
RL = 2 kΩ to V+/2
LMP7702/LMP7704
RL = 10 kΩ to V+/2
LMP7701
RL = 10 kΩ to V+/2
LMP7702/LMP7704
RL = 2 kΩ to V+/2
LMP7701
RL = 2 kΩ to V+/2
LMP7702/LMP7704
RL = 10 kΩ to V+/2
LMP7701
RL = 10 kΩ to V+/2
LMP7702/LMP7704
Sourcing VO = V+/2
VIN = 100 mV
Sinking VO = V+/2
40
30
35
40
45
20
20
42
42
42
80
150
mV
from V+
40
60
50
100
Output Voltage Swing Low
60
80
100
170
mV
mA
40
50
50
90
(6) (7)
IOUT
Output Current
25
15
25
20
VIN = −100 mV (LMP7701)
Sinking VO = V+/2
25
VIN = −100 mV (LMP7702/LMP7704)
15
IS
Supply Current
LMP7701
LMP7702
LMP7704
0.670
1.4
1.0
1.2
1.8
2.1
mA
2.9
3.5
4.5
(8)
SR
Slew Rate
AV = +1, VO = 2 VPP
10% to 90%
0.9
V/μs
GBW
THD+N
en
Gain Bandwidth
2.5
0.02
9
MHz
%
Total Harmonic Distortion + Noise
Input Referred Voltage Noise Density
Input Referred Current Noise Density
f = 1 kHz, AV = 1, R.L = 10 kΩ
f = 1 kHz
nV/√Hz
fA/√Hz
in
f = 100 kHz
1
(6) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
(7) The short circuit test is a momentary test.
(8) The number specified is the slower of positive and negative slew rates.
4
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Copyright © 2005–2013, Texas Instruments Incorporated
Product Folder Links: LMP7701 LMP7702 LMP7704
LMP7701, LMP7702, LMP7704
www.ti.com
SNOSAI9H –SEPTEMBER 2005–REVISED MARCH 2013
(1)
5V Electrical Characteristics
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5V, V− = 0V, VCM = V+/2, and RL > 10 kΩ to V+/2.
Boldface limits apply at the temperature extremes.
(2)
(3)
(2)
Parameter
Test Conditions
Min
Typ
±37
Max
Units
μV
VOS
Input Offset Voltage
LMP7701
±200
±500
LMP7702/LMP7704
±32
±220
±520
(4)
TCVOS
IB
Input Offset Voltage Temperature Drift
Input Bias Current
±1
±5
μV/°C
pA
(4) (5)
±0.2
±1
±50
−40°C ≤ TA ≤ 85°C
(4) (5)
±0.2
±1
−40°C ≤ TA ≤ 125°C
±400
IOS
Input Offset Current
40
fA
CMRR
Common Mode Rejection Ratio
0V ≤ VCM ≤ 5V
88
130
LMP7701
83
dB
0V ≤ VCM ≤ 5V
LMP7702/LMP7704
2.7V ≤ V+ ≤ 12V, VO = V+/2
86
81
130
100
PSRR
CMVR
AVOL
Power Supply Rejection Ratio
Common Mode Voltage Range
Open Loop Voltage Gain
86
82
dB
V
CMRR ≥ 80 dB
CMRR ≥ 78 dB
–0.2
–0.2
5.2
5.2
RL = 2 kΩ (LMP7701)
VO = 0.3V to 4.7V
100
96
119
119
130
60
RL = 2 kΩ (LMP7702/LMP7704)
VO = 0.3V to 4.7V
100
94
dB
RL = 10 kΩ
VO = 0.2V to 4.8V
RL = 2 kΩ to V+/2
100
96
VOUT
Output Voltage Swing High
110
LMP7701
130
RL = 2 kΩ to V+/2
60
120
LMP7702/LMP7704
RL = 10 kΩ to V+/2
200
mV
from V+
40
50
LMP7701
70
RL = 10 kΩ to V+/2
40
60
LMP7702/LMP7704
120
Output Voltage Swing Low
RL = 2 kΩ to V+/2
50
80
LMP7701
90
RL = 2 kΩ to V+/2
50
120
LMP7702/LMP7704
RL = 10 kΩ to V+/2
190
mV
30
40
LMP7701
50
RL = 10 kΩ to V+/2
30
50
LMP7702/LMP7704
100
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the
Statistical Quality Control (SQC) method.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(4) This parameter is specified by design and/or characterization and is not tested in production.
(5) Positive current corresponds to current flowing into the device.
Copyright © 2005–2013, Texas Instruments Incorporated
Submit Documentation Feedback
5
Product Folder Links: LMP7701 LMP7702 LMP7704
LMP7701, LMP7702, LMP7704
SNOSAI9H –SEPTEMBER 2005–REVISED MARCH 2013
www.ti.com
5V Electrical Characteristics (1) (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5V, V− = 0V, VCM = V+/2, and RL > 10 kΩ to V+/2.
Boldface limits apply at the temperature extremes.
(2)
(3)
(2)
Parameter
Test Conditions
Sourcing VO = V+/2
Min
Typ
66
Max
Units
(6) (7)
IOUT
Output Current
40
VIN = 100 mV (LMP7701)
28
Sourcing VO = V+/2
VIN = 100 mV (LMP7702/LMP7704)
Sinking VO = V+/2
VIN = −100 mV (LMP7701)
38
25
66
76
76
mA
40
28
Sinking VO = V+/2
40
VIN = −100 mV (LMP7702/LMP7704)
23
IS
Supply Current
LMP7701
LMP7702
LMP7704
0.715
1.5
1.0
1.2
1.9
2.2
mA
2.9
3.7
4.6
(8)
SR
Slew Rate
AV = +1, VO = 4 VPP
10% to 90%
1.0
V/μs
GBW
THD+N
en
Gain Bandwidth
2.5
0.02
9
MHz
%
Total Harmonic Distortion + Noise
Input Referred Voltage Noise Density
Input Referred Current Noise Density
f = 1 kHz, AV = 1, RL = 10 kΩ
f = 1 kHz
nV/√Hz
fA/√Hz
in
f = 100 kHz
1
(6) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
(7) The short circuit test is a momentary test.
(8) The number specified is the slower of positive and negative slew rates.
(1)
±5V Electrical Characteristics
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5V, V− = −5V, VCM = 0V, and RL > 10 kΩ to 0V.
Boldface limits apply at the temperature extremes.
(2)
(3)
(2)
Parameter
Test Conditions
Min
Typ
±37
Max
Units
μV
VOS
Input Offset Voltage
LMP7701
±200
±500
LMP7702/LMP7704
±37
±220
±520
(4)
TCVOS
IB
Input Offset Voltage Temperature Drift
Input Bias Current
±1
±5
μV/°C
pA
(4) (5)
±0.2
1
±50
−40°C ≤ TA ≤ 85°C
(4) (5)
±0.2
1
−40°C ≤ TA ≤ 125°C
±400
IOS
Input Offset Current
40
fA
CMRR
Common Mode Rejection Ratio
−5V ≤ VCM ≤ 5V
92
138
LMP7701
88
dB
−5V ≤ VCM ≤ 5V
90
138
LMP7702/LMP7704
86
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the
Statistical Quality Control (SQC) method.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(4) This parameter is specified by design and/or characterization and is not tested in production.
(5) Positive current corresponds to current flowing into the device.
6
Submit Documentation Feedback
Copyright © 2005–2013, Texas Instruments Incorporated
Product Folder Links: LMP7701 LMP7702 LMP7704
LMP7701, LMP7702, LMP7704
www.ti.com
SNOSAI9H –SEPTEMBER 2005–REVISED MARCH 2013
±5V Electrical Characteristics (1) (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5V, V− = −5V, VCM = 0V, and RL > 10 kΩ to 0V.
Boldface limits apply at the temperature extremes.
(2)
(3)
(2)
Parameter
Test Conditions
2.7V ≤ V+ ≤ 12V, VO = 0V
Min
86
82
Typ
98
Max
Units
PSRR
CMVR
AVOL
Power Supply Rejection Ratio
dB
Common Mode Voltage Range
Open Loop Voltage Gain
CMRR ≥ 80 dB
CMRR ≥ 78 dB
−5.2
−5.2
5.2
5.2
V
RL = 2 kΩ (LMP7701)
VO = −4.7V to 4.7V
100
98
121
121
134
134
90
RL = 2 kΩ (LMP7702/LMP7704)
VO = −4.7V to 4.7V
100
94
dB
RL = 10 kΩ (LMP7701)
VO = −4.8V to 4.8V
100
98
RL = 10 kΩ (LMP7702/LMP7704)
VO = −4.8V to 4.8V
100
97
VOUT
Output Voltage Swing High
RL = 2 kΩ to 0V
150
LMP7701
170
RL = 2 kΩ to 0V
90
180
LMP7702/LMP7704
290
mV
from V+
RL = 10 kΩ to 0V
40
80
LMP7701
100
RL = 10 kΩ to 0V
40
80
LMP7702/LMP7704
150
Output Voltage Swing Low
RL = 2 kΩ to 0V
90
130
LMP7701
150
RL = 2 kΩ to 0V
90
180
LMP7702/LMP7704
290
mV
from V–
RL = 10 kΩ to 0V
40
50
LMP7701
60
RL = 10 kΩ to 0V
40
60
LMP7702/LMP7704
110
(6) (7)
IOUT
Output Current
Sourcing VO = 0V
50
86
VIN = 100 mV (LMP7701)
35
Sourcing VO = 0V
VIN = 100 mV (LMP7702/LMP7704)
48
33
86
mA
Sinking VO = 0V
50
84
VIN = −100 mV
35
IS
Supply Current
LMP7701
LMP7702
LMP7704
0.790
1.7
3.2
1.1
1.1
1.3
2.1
2.5
mA
4.2
5.0
(8)
SR
Slew Rate
AV = +1, VO = 9 VPP
10% to 90%
V/μs
GBW
THD+N
en
Gain Bandwidth
2.5
0.02
9
MHz
%
Total Harmonic Distortion + Noise
Input Referred Voltage Noise Density
Input Referred Current Noise Density
f = 1 kHz, AV = 1, RL = 10 kΩ
f = 1 kHz
nV/√Hz
fA/√Hz
in
f = 100 kHz
1
(6) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
(7) The short circuit test is a momentary test.
(8) The number specified is the slower of positive and negative slew rates.
Copyright © 2005–2013, Texas Instruments Incorporated
Submit Documentation Feedback
7
Product Folder Links: LMP7701 LMP7702 LMP7704
LMP7701, LMP7702, LMP7704
SNOSAI9H –SEPTEMBER 2005–REVISED MARCH 2013
www.ti.com
CONNECTION DIAGRAMS
+
1
5
8
1
N/C
V
N/C
OUT
+
2
3
4
7
6
5
V
-IN
-
2
3
-
V
-
+
OUTPUT
N/C
+
+IN
4
IN-
IN+
-
V
Figure 2. 5-Pin SOT-23 (LMP7701)
Top View
Figure 3. 8-Pin SOIC (LMP7701)
Top View
Figure 4. 8-Pin SOIC/VSSOP (LMP7702)
Top View
Figure 5. 14-Pin SOIC/TSSOP (LMP7704)
Top View
8
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Product Folder Links: LMP7701 LMP7702 LMP7704
LMP7701, LMP7702, LMP7704
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SNOSAI9H –SEPTEMBER 2005–REVISED MARCH 2013
Typical Performance Characteristics
Unless otherwise noted: TA = 25°C, VCM = VS/2, RL > 10 kΩ.
Offset Voltage Distribution
TCVOS Distribution
20
16
25
20
V
= 3V
V
T
= 3V
S
S
-40°C Ç T Ç 125°C
= 25°C
A
A
12
8
15
10
5
4
0
0
-200
-100
0
100
200
-3
-3
-3
-2
-2
-2
-1
0
1
2
3
3
3
OFFSET VOLTAGE (mV)
TCV
(mV/°C)
OS
Figure 6.
Figure 7.
Offset Voltage Distribution
TCVOS Distribution
20
16
25
20
15
10
5
V
T
= 5V
V
= 5V
S
S
= 25°C
-40°C Ç T Ç 125°C
A
A
12
8
4
0
0
-200
-100
0
100
200
-1
0
1
2
OFFSET VOLTAGE (mV)
TCV
(mV/°C)
OS
Figure 8.
Figure 9.
Offset Voltage Distribution
TCVOS Distribution
20
16
25
20
15
10
5
V = 10V
S
V
= 10V
= 25°C
S
-40°C Ç T Ç 125°C
T
A
A
12
8
4
0
0
-200
-100
0
100
200
-1
0
1
2
OFFSET VOLTAGE (mV)
TCV
(mV/°C)
OS
Figure 10.
Figure 11.
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Typical Performance Characteristics (continued)
Unless otherwise noted: TA = 25°C, VCM = VS/2, RL > 10 kΩ.
Offset Voltage
CMRR
vs.
Frequency
vs.
Temperature
200
0
150
100
-20
V
= 3V
S
-40
V
= 3V
S
V
S
= 5V
50
-60
-80
0
V
= 10V
S
-50
V
S
= 5V
-100
-100
-150
-200
V
= 10V
S
-120
-140
-40 -20
0
20 40 60 80 100 120125
10k
1k
100k
10
100
1M
TEMPERATURE (°C)
FREQUENCY (Hz)
Figure 12.
Figure 13.
Offset Voltage
vs.
Supply Voltage
Offset Voltage
vs.
VCM
200
150
100
200
150
100
50
V
= 3V
S
-40°C
-40°C
25°C
50
0
25°C
0
-50
-50
125°C
-100
-100
-150
-200
125°C
-150
-200
2
4
6
8
10
12
-0.5
0
0.5
1.5
(V)
2
2.5
3
3.5
1
V
CM
SUPPLY VOLTAGE (V)
Figure 14.
Figure 15.
Offset Voltage
Offset Voltage
vs.
vs.
VCM
VCM
200
150
200
V
S
= 10V
V
= 5V
S
150
100
100
-40°C
25°C
-40°C
25°C
50
0
50
0
-50
-50
-100
-150
-200
-100
-150
125°C
125°C
-200
-1
0
1
2
3
4
5
6
5
-1
0
1
2
3
4
6
7
8
9 10 11
V
CM
(V)
V
CM
(V)
Figure 16.
Figure 17.
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Typical Performance Characteristics (continued)
Unless otherwise noted: TA = 25°C, VCM = VS/2, RL > 10 kΩ.
Input Bias Current
Input Bias Current
vs.
vs.
VCM
VCM
300
200
100
200
V
S
= 3V
V
S
= 3V
100
0
85°C
-40°C
0
-100
-100
-200
-200
-300
125°C
25°C
1.5
0
0
0
0.5
1
1.5
(V)
2
2.5
3
0
0.5
1
2
2.5
3
V
V
(V)
CM
CM
Figure 18.
Figure 19.
Input Bias Current
Input Bias Current
vs.
VCM
vs.
VCM
300
200
100
300
200
V
S
= 5V
V
= 5V
S
100
0
85°C
-40°C
25°C
0
-100
-100
-200
-300
-200
-300
125°C
1
2
3
4
5
0
1
2
3
4
5
V
(V)
V
CM
(V)
CM
Figure 20.
Figure 21.
Input Bias Current
vs.
VCM
Input Bias Current vs. VCM
500
300
200
V
S
= 10V
V
S
= 10V
250
0
100
0
85°C
-40°C
25°C
-100
-250
-200
-300
125°C
-500
2
4
6
8
10
0
2
4
6
8
10
V
CM
(V)
V
CM
(V)
Figure 22.
Figure 23.
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Typical Performance Characteristics (continued)
Unless otherwise noted: TA = 25°C, VCM = VS/2, RL > 10 kΩ.
PSRR vs. Frequency
Supply Current vs. Supply Voltage (Per Channel)
120
1.2
V
= 10V
S
V
S
= 5V
100
1
125°C
-40°C
V
S
= 3V
25°C
+PSRR
0.8
0.6
0.4
80
60
V
= 10V
S
V
= 5V
S
V
= 3V
S
40
20
0.2
0
-PSRR
100k
0
10k
10
100
1k
1M
2
4
6
8
10
12
FREQUENCY (Hz)
SUPPLY VOLTAGE (V)
Figure 24.
Figure 25.
Sinking Current vs. Supply Voltage
Sourcing Current vs. Supply Voltage
120
100
120
-40°C
25°C
-40°C
125°C
100
25°C
80
60
40
80
60
40
125°C
20
0
20
0
2
4
6
8
10
12
2
4
6
8
10
12
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 26.
Figure 27.
Output Voltage vs. Output Current
Slew Rate vs. Supply Voltage
+
1.5
1.4
1.3
1.2
1.1
1
V
A
V
= +1
T
A
= -40°C, 25°C, 125C
V
= 2 V
+
IN
PP
(V ) -1
R
C
= 10 kW
L
L
FALLING EDGE
RISING EDGE
= 10 pF
+
(V ) -2
3V
ö
ö
0.9
0.8
0.7
0.6
0.5
2
1
0
V
= 3V, 5V, 10V
S
0
20
40
60
80
100
2
4
6
8
10
12
OUTPUT CURRENT (mA)
SUPPLY VOLTAGE (V)
Figure 28.
Figure 29.
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Typical Performance Characteristics (continued)
Unless otherwise noted: TA = 25°C, VCM = VS/2, RL > 10 kΩ.
Open Loop Frequency Response
Open Loop Frequency Response
100
80
60
40
20
0
225
180
135
90
100
80
60
40
20
0
225
V
= 3V, 5V, 10V
= 20 pF, 50 pF, 100 pF
= 10 kW
S
GAIN
GAIN
180
135
C
R
L
L
V
= 10V
S
-40°C
25°C
C
= 20 pF 90
L
PHASE
PHASE
45
0
45
0
125°C
125°C
25°C
-40°C
-45
-90
-45
-90
-20
-40
-60
-20
-40
-60
V
= 5V
S
C
= 20 pF
= 10 kW
V
= 3V
L
L
S
R
C
= 100 pF
L
-135
10M
100M
-135
10M
100M
100k
100
10k
1M
1k
100k
100
10k
1M
1k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 30.
Figure 31.
Large Signal Step Response
Small Signal Step Response
V
= 5V
V
= 5V
S
S
f = 10 kHz
f = 10 kHz
A
V
= +1
A
V
= +1
V
V
= 100 mV
= 10 kW
= 10 pF
= 2 V
IN
PP
IN
PP
R
R
= 10 kW
L
L
L
L
C
C
= 10 pF
10 ms/DIV
10 ms/DIV
Figure 32.
Figure 33.
Large Signal Step Response
Small Signal Step Response
V
= 5V
V
= 5V
S
S
f = 10 kHz
f = 10 kHz
A
V
= +10
A
V
= +10
V
V
= 100 mV
= 10 kW
= 10 pF
= 400 mV
= 10 kW
= 10 pF
IN
PP
IN
PP
R
R
L
L
L
L
C
C
10 ms/DIV
10 ms/DIV
Figure 34.
Figure 35.
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Typical Performance Characteristics (continued)
Unless otherwise noted: TA = 25°C, VCM = VS/2, RL > 10 kΩ.
Input Voltage Noise vs. Frequency
Open Loop Gain vs. Output Voltage Swing
120
150
140
130
120
V
= 10V
S
V
= 5V
S
100
80
R
L
= 10 kW
110
100
90
V
= 3V
S
60
40
20
0
V
= 3V
S
V
= 5V
S
80
R
L
= 2 kW
70
V
= 10V
S
60
500
1k
1
10
100
10k
100k
400
300
200
100
0
FREQUENCY (Hz)
OUTPUT SWING FROM RAIL (mV)
Figure 36.
Figure 37.
Output Swing High vs. Supply Voltage
Output Swing Low vs. Supply Voltage
50
50
40
30
20
10
0
R
L
= 10 kW
R
L
= 10 kW
25°C
40
30
20
10
0
125°C
-40°C
125°C
-40°C
25°C
2
4
6
8
10
12
2
4
6
8
10
12
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 38.
Figure 39.
Output Swing High vs. Supply Voltage
Output Swing Low vs. Supply Voltage
100
80
60
40
20
0
100
80
60
40
20
0
R
= 2 kW
R
L
= 2 kW
L
25°C
25°C
125°C
125°C
-40°C
-40°C
2
4
6
8
10
12
2
4
6
8
10
12
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 40.
Figure 41.
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Typical Performance Characteristics (continued)
Unless otherwise noted: TA = 25°C, VCM = VS/2, RL > 10 kΩ.
THD+N vs. Frequency
THD+N vs. Output Voltage
1
1
V
= 5V
S
V
V
= 5V
S
f = 1 kHz
= 4.5 V
O
PP
R
= 100 kW
L
R
= 100 kW
L
0.1
0.01
0.1
0.01
A
V
= +10
A
V
= +10
A
V
= +1
A
V
= +1
0.001
0.001
10
100
1k
10k
100k
0.001
0.01
0.1
1
10
V
OUT
(V)
FREQUENCY (Hz)
Figure 42.
Figure 43.
Crosstalk Rejection Ratio vs. Frequency (LMP7702/LMP7704)
140
V
S
= 12V
120
100
80
V
= 5V
S
V
S
= 3V
60
40
100
1k
10k
100k
1M
FREQUENCY (Hz)
Figure 44.
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APPLICATION INFORMATION
LMP7701/LMP7702/LMP7704
The LMP7701/LMP7702/LMP7704 are single, dual, and quad low offset voltage, rail-to-rail input and output
precision amplifiers each with a CMOS input stage and wide supply voltage range of 2.7V to 12V. The
LMP7701/LMP7702/LMP7704 have a very low input bias current of only ±200 fA at room temperature.
The wide supply voltage range of 2.7V to 12V over the extensive temperature range of −40°C to 125°C makes
the LMP7701/LMP7702/LMP7704 excellent choices for low voltage precision applications with extensive
temperature requirements.
The LMP7701/LMP7702/LMP7704 have only ±37 μV of typical input referred offset voltage and this offset is
specified to be less than ±500 μV for the single and ±520 μV for the dual and quad, over temperature. This
minimal offset voltage allows more accurate signal detection and amplification in precision applications.
The low input bias current of only ±200 fA along with the low input referred voltage noise of 9 nV/√Hz gives the
LMP7701/LMP7702/LMP7704 superiority for use in sensor applications. Lower levels of noise from the
LMP7701/LMP7702/LMP7704 mean of better signal fidelity and a higher signal-to-noise ratio.
Texas Instruments is heavily committed to precision amplifiers and the market segment they serve. Technical
support and extensive characterization data is available for sensitive applications or applications with a
constrained error budget.
The LMP7701 is offered in the space saving 5-Pin SOT-23 and 8-Pin SOIC package. The LMP7702 comes in
the 8-Pin SOIC and 8-Pin VSSOP package. The LMP7704 is offered in the 14-Pin SOIC and 14-Pin TSSOP
package. These small packages are ideal solutions for area constrained PC boards and portable electronics.
CAPACITIVE LOAD
The LMP7701/LMP7702/LMP7704 can each be connected as a non-inverting unity gain follower. This
configuration is the most sensitive to capacitive loading.
The combination of a capacitive load placed on the output of an amplifier along with the amplifier's output
impedance creates a phase lag which in turn reduces the phase margin of the amplifier. If the phase margin is
significantly reduced, the response will be either underdamped or it will oscillate.
In order to drive heavier capacitive loads, an isolation resistor, RISO, in Figure 45 should be used. By using this
isolation resistor, the capacitive load is isolated from the amplifier's output, and hence, the pole caused by CL is
no longer in the feedback loop. The larger the value of RISO, the more stable the output voltage will be. If values
of RISO are sufficiently large, the feedback loop will be stable, independent of the value of CL. However, larger
values of RISO result in reduced output swing and reduced output current drive.
Figure 45. Isolating Capacitive Load
INPUT CAPACITANCE
CMOS input stages inherently have low input bias current and higher input referred voltage noise. The
LMP7701/LMP7702/LMP7704 enhance this performance by having the low input bias current of only ±200 fA, as
well as, a very low input referred voltage noise of 9 nV/√Hz. In order to achieve this a larger input stage has been
used. This larger input stage increases the input capacitance of the LMP7701/LMP7702/ LMP7704. The typical
value of this input capacitance, CIN, for the LMP7701/LMP7702/LMP7704 is 25 pF. The input capacitance will
interact with other impedances such as gain and feedback resistors, which are seen on the inputs of the
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amplifier, to form a pole. This pole will have little or no effect on the output of the amplifier at low frequencies and
DC conditions, but will play a bigger role as the frequency increases. At higher frequencies, the presence of this
pole will decrease phase margin and will also cause gain peaking. In order to compensate for the input
capacitance, care must be taken in choosing the feedback resistors. In addition to being selective in picking
values for the feedback resistor, a capacitor can be added to the feedback path to increase stability.
The DC gain of the circuit shown in Figure 46 is simply –R2/R1.
C
F
R
2
R
1
-
+
C
IN
V
+
-
IN
+
V
OUT
-
R2
R1
VOUT
VIN
-
AV =
-
=
Figure 46. Compensating for Input Capacitance
For the time being, ignore CF. The AC gain of the circuit in Figure 46 can be calculated as follows:
VOUT
VIN
-R2/R1
(s) =
s2
s
«
«
∆
1 +
+
A0 R1
A0
∆
≈
≈
∆
«
≈
≈
∆
«
R1 + R2
CIN R2
This equation is rearranged to find the location of the two poles:
2
«
∆
4 A0CIN
R2
≈
1
1
-1
1
1
-
≈
P1,2
=
+
ê
+
∆
«
R1
R2
R
R2
2CIN
1
(1)
As shown in Equation 1, as values of R1 and R2 are increased, the magnitude of the poles is reduced, which in
turn decreases the bandwidth of the amplifier. Whenever possible, it is best to choose smaller feedback resistors.
Figure 47 shows the effect of the feedback resistor on the bandwidth of the LMP7701/LMP7702/LMP7704.
2
V
= 5V
= 0 pF
= -1
S
C
F
V
0
-2
A
R
1
= R = 100 kW
2
-4
R
1
= R = 30 kW
2
-6
R
1
= R = 10 kW
2
-8
R
1
= R = 1 kW
2
-10
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 47. Closed Loop Gain vs. Frequency
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Equation 1 has two poles. In most cases, it is the presence of pairs of poles that causes gain peaking. In order to
eliminate this effect, the poles should be placed in Butterworth position, since poles in Butterworth position do not
cause gain peaking. To achieve a Butterworth pair, the quantity under the square root in Equation 1 should be
set to equal −1. Using this fact and the relation between R1 and R2, R2 = −AV R1, the optimum value for R1 can
be found. This is shown in Equation 2. If R1 is chosen to be larger than this optimum value, gain peaking will
occur.
(1 - AV)2
R1
<
2A0AVCIN
(2)
In Figure 46, CF is added to compensate for input capacitance and to increase stability. Additionally, CF reduces
or eliminates the gain peaking that can be caused by having a larger feedback resistor. Figure 48 shows how CF
reduces gain peaking.
2
C
= 0 pF
= 1 pF
F
0
-2
C
F
C
F
= 5 pF
-4
C
= 3 pF
F
-6
V
= 5V
S
-8
R
1
= R = 100 kW
2
A
= -1
V
-10
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 48. Closed Loop Gain vs. Frequency with Compensation
DIODES BETWEEN THE INPUTS
The LMP7701/LMP7702/LMP7704 have a set of anti-parallel diodes between the input pins, as shown in
Figure 49. These diodes are present to protect the input stage of the amplifier. At the same time, they limit the
amount of differential input voltage that is allowed on the input pins. A differential signal larger than one diode
voltage drop might damage the diodes. The differential signal between the inputs needs to be limited to ±300 mV
or the input current needs to be limited to ±10 mA.
+
+
V
V
D
1
ESD
IN
ESD
ESD
R
1
R
2
-
+
IN
ESD
D
2
-
-
V
V
Figure 49. Input of LMP7701
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PRECISION CURRENT SOURCE
The LMP7701/LMP7702/LMP7704 can each be used as a precision current source in many different
applications. Figure 50 shows a typical precision current source. This circuit implements a precision voltage
controlled current source. Amplifier A1 is a differential amplifier that uses the voltage drop across RS as the
feedback signal. Amplifier A2 is a buffer that eliminates the error current from the load side of the RS resistor that
would flow in the feedback resistor if it were connected to the load side of the RS resistor. In general, the circuit is
stable as long as the closed loop bandwidth of amplifier A2 is greater then the closed loop bandwidth of amplifier
A1. Note that if A1 and A2 are the same type of amplifiers, then the feedback around A1 will reduce its
bandwidth compared to A2.
R
R
V
1
+
V
-
R
S
I = (V2 œ V1)
A
1
RS
+
-
V
+
V
Z
LOAD
-
R
R
V
2
A
2
+
-
V
Figure 50. Precision Current Source
The equation for output current can be derived as follows:
(V0 œ IRS)R
V2R
V1R
V0R
=
+
+
R + R
R + R
R + R R + R
Solving for the current I results in the following equation:
V2 œ V1
I =
R
S
LOW INPUT VOLTAGE NOISE
The LMP7701/LMP7702/LMP7704 have the very low input voltage noise of 9 nV/√Hz. This input voltage noise
can be further reduced by placing N amplifiers in parallel as shown in Figure 51. The total voltage noise on the
output of this circuit is divided by the square root of the number of amplifiers used in this parallel combination.
This is because each individual amplifier acts as an independent noise source, and the average noise of
independent sources is the quadrature sum of the independent sources divided by the number of sources. For N
identical amplifiers, this means:
1
2
2
nN
e2 +e
n1 n2+....+e
REDUCED INPUT VOLTAGE NOISE =
N
N
1
Ne2
=
=
=
e
n
n
N
N
1
e
n
N
Figure 51 shows a schematic of this input voltage noise reduction circuit. Typical resistor values are:
RG = 10Ω, RF = 1 kΩ, and RO = 1 kΩ.
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+
-
V
V
+
-
IN
V
OUT
R
O
O
O
R
G
V
R
F
+
V
+
-
R
-
R
G
V
R
F
+
V
+
-
R
-
R
G
V
R
F
+
V
+
-
R
O
-
R
G
V
R
F
Figure 51. Noise Reduction Circuit
TOTAL NOISE CONTRIBUTION
The LMP7701/LMP7702/LMP7704 have very low input bias current, very low input current noise, and very low
input voltage noise. As a result, these amplifiers are ideal choices for circuits with high impedance sensor
applications.
Figure 52 shows the typical input noise of the LMP7701/LMP7702/LMP7704 as a function of source resistance
where:
en denotes the input referred voltage noise
ei is the voltage drop across source resistance due to input referred current noise or ei = RS * in
et shows the thermal noise of the source resistance
eni shows the total noise on the input.
Where:
eni
=
en2+ e2i + et2
The input current noise of the LMP7701/LMP7702/LMP7704 is so low that it will not become the dominant factor
in the total noise unless source resistance exceeds 300 MΩ, which is an unrealistically high value.
As is evident in Figure 52, at lower RS values, total noise is dominated by the amplifier's input voltage noise.
Once RS is larger than a few kilo-Ohms, then the dominant noise factor becomes the thermal noise of RS. As
mentioned before, the current noise will not be the dominant noise factor for any practical application.
20
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SNOSAI9H –SEPTEMBER 2005–REVISED MARCH 2013
1000
100
10
e
ni
e
n
e
t
e
i
1
0.1
10k
(W)
1M
10
1k
100k
10M
100
R
S
Figure 52. Total Input Noise
HIGH IMPEDANCE SENSOR INTERFACE
Many sensors have high source impedances that may range up to 10 MΩ. The output signal of sensors often
needs to be amplified or otherwise conditioned by means of an amplifier. The input bias current of this amplifier
can load the sensor's output and cause a voltage drop across the source resistance as shown in Figure 53,
where VIN+ = VS – IBIAS*RS
The last term, IBIAS*RS, shows the voltage drop across RS. To prevent errors introduced to the system due to this
voltage, an op amp with very low input bias current must be used with high impedance sensors. This is to keep
the error contribution by IBIAS*RS less than the input voltage noise of the amplifier, so that it will not become the
dominant noise factor.
SENSOR
+
V
I
R
S
B
V
+
IN
+
-
+
-
V
S
-
V
Figure 53. Noise Due to IBIAS
pH electrodes are very high impedance sensors. As their name indicates, they are used to measure the pH of a
solution. They usually do this by generating an output voltage which is proportional to the pH of the solution. pH
electrodes are calibrated so that they have zero output for a neutral solution, pH = 7, and positive and negative
voltages for acidic or alkaline solutions. This means that the output of a pH electrode is bipolar and has to be
level shifted to be used in a single supply system. The rate of change of this voltage is usually shown in mV/pH
and is different for different pH sensors. Temperature is also an important factor in a pH electrode reading. The
output voltage of the senor will change with temperature.
Figure 54 shows a typical output voltage spectrum of a pH electrode. Note that the exact values of output voltage
will be different for different sensors. In this example, the pH electrode has an output voltage of 59.15 mV/pH at
25°C.
Copyright © 2005–2013, Texas Instruments Incorporated
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LMP7701, LMP7702, LMP7704
SNOSAI9H –SEPTEMBER 2005–REVISED MARCH 2013
www.ti.com
ACID
BASE
10
12
4
7
14 pH
0
2
0 mV
-414 mV
+414 mV
+177 mV
-177 mV
Figure 54. Output Voltage of a pH Electrode
The temperature dependence of a typical pH electrode is shown in Figure 55. As is evident, the output voltage
changes with changes in temperature.
mV
600
10°C (74.04 mV/pH)
500
400
25°C (59.15 mV/pH)
300
200
100
12
2
10
14
4
8
pH
0
3
5
7
9
11
1
13
-100
-200
-300
-400
-500
0°C (54.20 mV/pH)
-600
Figure 55. Temperature Dependence of a pH Electrode
The schematic shown in Figure 56 is a typical circuit which can be used for pH measurement. The LM35 is a
precision integrated circuit temperature sensor. This sensor is differentiated from similar products because it has
an output voltage linearly proportional to Celcius measurement, without the need to convert the temperature to
Kelvin. The LM35 is used to measure the temperature of the solution and feeds this reading to the Analog to
Digital Converter, ADC. This information is used by the ADC to calculate the temperature effects on the pH
readings. The LM35 needs to have a resistor, RT in Figure 56, to –V+ in order to be able to read temperatures
below 0°C. RT is not needed if temperatures are not expected to go below zero.
The output of pH electrodes is usually large enough that it does not require much amplification; however, due to
the very high impedance, the output of a pH electrode needs to be buffered before it can go to an ADC. Since
most ADCs are operated on single supply, the output of the pH electrode also needs to be level shifted. Amplifier
A1 buffers the output of the pH electrode with a moderate gain of +2, while A2 provides the level shifting. VOUT at
the output of A2 is given by: VOUT = −2VpH + 1.024V.
The LM4140A is a precision, low noise, voltage reference used to provide the level shift needed. The ADC used
in this application is the ADC12032 which is a 12-bit, 2 channel converter with multiplexers on the inputs and a
serial output. The 12-bit ADC enables users to measure pH with an accuracy of 0.003 of a pH unit. Adequate
power supply bypassing and grounding is extremely important for ADCs. Recommended bypass capacitors are
shown in Figure 56. It is common to share power supplies between different components in a circuit. To minimize
the effects of power supply ripples caused by other components, the op amps need to have bypass capacitors
on the supply pins. Using the same value capacitors as those used with the ADC are ideal. The combination of
these three values of capacitors ensures that AC noise present on the power supply line is grounded and does
not interfere with the amplifiers' signal.
22
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LMP7701, LMP7702, LMP7704
www.ti.com
SNOSAI9H –SEPTEMBER 2005–REVISED MARCH 2013
+
V
pH ELECTRODE TEMPERATURE
0.01 mF
0.1 mF
10 mF
0.01 mF
0.1 mF
10 mF
+
75W
1 mF
V
R
10 kW
R
2
10 kW
1
+
-
1
A1
-
V+
+
D
+
V
V
V
A
+
V
CH0
CH1
R
10 kW
R
4
10 kW
-
3
V
OUT
A2
+
R
T
+
V
ADC12034
-
V
V
= 0.5012V
OFFSET
LM35
-V+
R
5
R
6
3
2
10 kW
3.3 kW
6
LM4140A
1,4,7,8
AGND
V
V
-
REF
+
REF
DGND
pH ELECTRODE
Figure 56. pH Measurement Circuit
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LMP7701, LMP7702, LMP7704
SNOSAI9H –SEPTEMBER 2005–REVISED MARCH 2013
www.ti.com
REVISION HISTORY
Changes from Revision G (March 2013) to Revision H
Page
•
Changed layout of National Data Sheet to TI format .......................................................................................................... 23
24
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Product Folder Links: LMP7701 LMP7702 LMP7704
PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
PACKAGING INFORMATION
Orderable Device
LMP7701MA/NOPB
LMP7701MAX/NOPB
Status Package Type Package Pins Package
Eco Plan
Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(6)
(3)
(4/5)
ACTIVE
SOIC
SOIC
D
8
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMP77
01MA
ACTIVE
D
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMP77
01MA
LMP7701MF
NRND
SOT-23
SOT-23
DBV
DBV
5
5
1000
1000
TBD
Call TI
CU SN
Call TI
-40 to 125
-40 to 125
AC2A
AC2A
LMP7701MF/NOPB
ACTIVE
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
LMP7701MFX
NRND
SOT-23
SOT-23
DBV
DBV
5
5
3000
3000
TBD
Call TI
CU SN
Call TI
-40 to 125
-40 to 125
AC2A
AC2A
LMP7701MFX/NOPB
ACTIVE
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
LMP7702MA/NOPB
LMP7702MAX/NOPB
ACTIVE
ACTIVE
SOIC
SOIC
D
D
8
8
95
Green (RoHS
& no Sb/Br)
CU SN
CU SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
LMP77
02MA
2500
Green (RoHS
& no Sb/Br)
LMP77
02MA
LMP7702MM
NRND
VSSOP
VSSOP
DGK
DGK
8
8
1000
1000
TBD
Call TI
CU SN
Call TI
-40 to 125
-40 to 125
AA3A
AA3A
LMP7702MM/NOPB
ACTIVE
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
LMP7702MMX/NOPB
LMP7704MA/NOPB
LMP7704MAX/NOPB
LMP7704MT
ACTIVE
ACTIVE
ACTIVE
NRND
VSSOP
SOIC
DGK
D
8
3500
55
Green (RoHS
& no Sb/Br)
CU SN
CU SN
CU SN
Call TI
CU SN
CU SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Call TI
-40 to 125
AA3A
14
14
14
14
14
Green (RoHS
& no Sb/Br)
LMP7704
MA
SOIC
D
2500
94
Green (RoHS
& no Sb/Br)
LMP7704
MA
TSSOP
TSSOP
TSSOP
PW
PW
PW
TBD
-40 to 125
-40 to 125
-40 to 125
LMP77
04MT
LMP7704MT/NOPB
LMP7704MTX/NOPB
ACTIVE
ACTIVE
94
Pb-Free
(RoHS)
Level-1-260C-UNLIM
Level-1-260C-UNLIM
LMP77
04MT
2500
Pb-Free
(RoHS)
LMP77
04MT
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LMP7701MAX/NOPB
LMP7701MF
SOIC
SOT-23
SOT-23
SOT-23
SOT-23
SOIC
D
8
5
2500
1000
1000
3000
3000
2500
1000
1000
3500
2500
2500
330.0
178.0
178.0
178.0
178.0
330.0
178.0
178.0
330.0
330.0
330.0
12.4
8.4
6.5
3.2
3.2
3.2
3.2
6.5
5.3
5.3
5.3
6.5
6.95
5.4
3.2
3.2
3.2
3.2
5.4
3.4
3.4
3.4
9.35
8.3
2.0
1.4
1.4
1.4
1.4
2.0
1.4
1.4
1.4
2.3
1.6
8.0
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
8.0
8.0
12.0
8.0
Q1
Q3
Q3
Q3
Q3
Q1
Q1
Q1
Q1
Q1
Q1
DBV
DBV
DBV
DBV
D
LMP7701MF/NOPB
LMP7701MFX
5
8.4
8.0
5
8.4
8.0
LMP7701MFX/NOPB
LMP7702MAX/NOPB
LMP7702MM
5
8.4
8.0
8
12.4
12.4
12.4
12.4
16.4
12.4
12.0
12.0
12.0
12.0
16.0
12.0
VSSOP
VSSOP
VSSOP
SOIC
DGK
DGK
DGK
D
8
LMP7702MM/NOPB
LMP7702MMX/NOPB
LMP7704MAX/NOPB
LMP7704MTX/NOPB
8
8
14
14
TSSOP
PW
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LMP7701MAX/NOPB
LMP7701MF
SOIC
SOT-23
SOT-23
SOT-23
SOT-23
SOIC
D
8
5
2500
1000
1000
3000
3000
2500
1000
1000
3500
2500
2500
367.0
210.0
210.0
210.0
210.0
367.0
210.0
210.0
367.0
367.0
367.0
367.0
185.0
185.0
185.0
185.0
367.0
185.0
185.0
367.0
367.0
367.0
35.0
35.0
35.0
35.0
35.0
35.0
35.0
35.0
35.0
35.0
35.0
DBV
DBV
DBV
DBV
D
LMP7701MF/NOPB
LMP7701MFX
5
5
LMP7701MFX/NOPB
LMP7702MAX/NOPB
LMP7702MM
5
8
VSSOP
VSSOP
VSSOP
SOIC
DGK
DGK
DGK
D
8
LMP7702MM/NOPB
LMP7702MMX/NOPB
LMP7704MAX/NOPB
LMP7704MTX/NOPB
8
8
14
14
TSSOP
PW
Pack Materials-Page 2
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