LMP7707MAX/NOPB [TI]

精密 CMOS 输入 RRIO 宽电源电压范围解补偿单通道放大器 | D | 8;
LMP7707MAX/NOPB
型号: LMP7707MAX/NOPB
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

精密 CMOS 输入 RRIO 宽电源电压范围解补偿单通道放大器 | D | 8

放大器 光电二极管
文件: 总47页 (文件大小:2019K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LMP7707, LMP7708, LMP7709  
www.ti.com  
SNOSAW5B JUNE 2007REVISED MARCH 2013  
LMP7707/LMP7708/LMP7709 Precision, CMOS Input, RRIO, Wide Supply Range  
Decompensated Amplifiers  
Check for Samples: LMP7707, LMP7708, LMP7709  
1
FEATURES  
DESCRIPTION  
The LMP7707/LMP7708/LMP7709 devices are  
single, dual, and quad low offset voltage, rail-to-rail  
input and output precision amplifiers which each have  
a CMOS input stage and a wide supply voltage  
range. The LMP7707/LMP7708/LMP7709 are part of  
the LMP™ precision amplifier family and are ideal for  
23  
Unless Otherwise Noted, Typical Values at  
VS = 5V.  
Input Offset Voltage (LMP7707) ±200 µV (Max)  
Input Offset Voltage (LMP7708/LMP7709)  
±220 µV (Max)  
sensor  
interface  
and  
other  
instrumentation  
Input Bias Current ±200 fA  
applications. These decompensated amplifiers are  
stable at a gain of 6 and higher.  
Input Voltage Noise 9 nV/Hz  
CMRR 130 dB  
The ensured low offset voltage of less than ±200 µV  
along with the ensured low input bias current of less  
than ±1 pA make the LMP7707/LMP7708/LMP7709  
Open Loop Gain 130 dB  
Temperature Range 40°C to 125°C  
Gain Bandwidth Product (AV =10) 14 MHz  
Stable at a Gain of 10 or Higher  
Supply Current (LMP7707) 715 µA  
Supply Current (LMP7708) 1.5 mA  
Supply Current (LMP7709) 2.9 mA  
Supply Voltage Range 2.7V to 12V  
Rail-to-Rail Input and Output  
ideal  
for  
precision  
applications.  
The  
LMP7707/LMP7708/LMP7709 are built utilizing VIP50  
technology, which allows the combination of a CMOS  
input stage and a supply voltage range of 12V with  
rail-to-rail common mode voltage capability. The  
LMP7707/LMP7708/LMP7709 are the perfect choice  
in many applications where conventional CMOS parts  
cannot operate due to the voltage conditions.  
The unique design of the rail-to-rail input stage of  
each  
of  
the  
LMP7707/LMP7708/LMP7709  
APPLICATIONS  
significantly reduces the CMRR glitch commonly  
associated with rail-to-rail input amplifiers. Both sides  
of the complimentary input stage have been trimmed,  
thereby reducing the difference between the NMOS  
and PMOS offsets. The output swings within 40 mV  
of either rail to maximize the signal dynamic range in  
applications requiring low supply voltage.  
High Impedance Sensor Interface  
Battery Powered Instrumentation  
High Gain Amplifiers  
DAC Buffer  
Instrumentation Amplifier  
Active Filters  
The LMP7707 is offered in the space-saving 5-pin  
SOT-23 and 8-pin SOIC packages, the LMP7708 is  
offered in the 8-pin VSSOP and 8-pin SOIC  
packages, and the quad LMP7709 is offered in the  
14-pin TSSOP and 14-pin SOIC packages. These  
small packages are ideal solutions for area  
constrained PC boards and portable electronics.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
3
LMP is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2007–2013, Texas Instruments Incorporated  
LMP7707, LMP7708, LMP7709  
SNOSAW5B JUNE 2007REVISED MARCH 2013  
www.ti.com  
Open Loop Frequency Response  
DECOMPENSATED OP AMP  
UNITY-GAIN STABLE OP AMP  
A
OL  
G
min  
f
GBWP  
fu  
f
1
f
f
d
2
'
f
u
Figure 1. Increased Bandwidth for Same Supply Current at AV> 10  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Absolute Maximum Ratings(1)(2)  
Human Body Model  
Machine Model  
2000V  
200V  
ESD Tolerance(3)  
Charge Device Model  
1000V  
VIN Differential  
±300 mV  
Supply Voltage (VS = V+ – V)  
Voltage at Input/Output Pins  
Input Current  
13.2V  
V++ 0.3V to V0.3V  
10 mA  
Storage Temperature Range  
Junction Temperature(4)  
65°C to +150°C  
+150°C  
Infrared or Convection (20 sec)  
235°C  
Soldering Information  
Wave Soldering Lead Temp. (10 sec)  
260°C  
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for  
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test  
conditions, see the Electrical Characteristics tables.  
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and  
specifications.  
(3) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of  
JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).  
(4) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is  
PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.  
Operating Ratings(1)  
Temperature Range(2)  
Supply Voltage (VS = V+ – V)  
40°C to +125°C  
2.7V to 12V  
265°C/W  
5-Pin SOT-23  
8-Pin SOIC  
190°C/W  
(2)  
Package Thermal Resistance (θJA  
)
8-Pin VSSOP  
14-Pin TSSOP  
14-Pin SOIC  
235°C/W  
122°C/W  
145°C/W  
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for  
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test  
conditions, see the Electrical Characteristics tables.  
(2) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is  
PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.  
2
Submit Documentation Feedback  
Copyright © 2007–2013, Texas Instruments Incorporated  
Product Folder Links: LMP7707 LMP7708 LMP7709  
LMP7707, LMP7708, LMP7709  
www.ti.com  
SNOSAW5B JUNE 2007REVISED MARCH 2013  
3V Electrical Characteristics(1)  
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 3V, V= 0V, VCM = V+/2, and RL > 10 kto V+/2.  
Boldface limits apply at the temperature extremes.  
Symbol  
Parameter  
Conditions  
Min(2)  
Typ(3)  
Max(2)  
Units  
VOS  
±37  
±200  
±500  
LMP7707  
Input Offset Voltage  
μV  
±56  
±220  
±520  
LMP7708/LMP7709  
TCVOS  
IB  
Input Offset Voltage Drift(4)  
Input Bias Current(4)(5)  
Input Offset Current  
±1  
±5  
±1  
μV/°C  
pA  
±0.2  
40°C TA 85°C  
40°C TA 125°C  
±50  
±400  
IOS  
40  
fA  
CMRR  
0V VCM 3V  
86  
130  
LMP7707  
80  
Common Mode Rejection Ratio  
dB  
0V VCM 3V  
LMP7708/LMP7709  
84  
78  
130  
98  
PSRR  
CMVR  
86  
82  
Power Supply Rejection Ratio  
2.7V V+ 12V, VO = V+/2  
dB  
V
CMRR 80 dB  
CMRR 77 dB  
0.2  
0.2  
3.2  
Input Common-Mode Voltage Range  
3.2  
AVOL  
RL = 2 k(LMP7707)  
VO = 0.3V to 2.7V  
100  
96  
114  
114  
124  
40  
RL = 2 k(LMP7708/LMP7709)  
VO = 0.3V to 2.7V  
100  
94  
Open Loop Voltage Gain  
dB  
RL = 10 kΩ  
VO = 0.2V to 2.8V  
RL = 2 kto V+/2  
100  
96  
VO  
80  
LMP7707  
120  
RL = 2 kto V+/2  
40  
80  
LMP7708/LMP7709  
RL = 10 kto V+/2  
150  
mV  
Output Swing High  
from V+  
30  
40  
LMP7707  
60  
RL = 10 kto V+/2  
35  
50  
LMP7708/LMP7709  
100  
RL = 2 kto V+/2  
40  
60  
LMP7707  
80  
RL = 2 kto V+/2  
45  
100  
LMP7708/LMP7709  
RL = 10 kto V+/2  
170  
Output Swing Low  
mV  
20  
40  
LMP7707  
50  
RL = 10 kto V+/2  
20  
50  
LMP7708/LMP7709  
90  
(1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very  
limited self-heating of the device.  
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using the  
Statistical Quality Control (SQC) method.  
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary  
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped  
production material.  
(4) This parameter is specified by design and/or characterization and is not tested in production.  
(5) Positive current corresponds to current flowing into the device.  
Copyright © 2007–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
3
Product Folder Links: LMP7707 LMP7708 LMP7709  
LMP7707, LMP7708, LMP7709  
SNOSAW5B JUNE 2007REVISED MARCH 2013  
www.ti.com  
3V Electrical Characteristics(1) (continued)  
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 3V, V= 0V, VCM = V+/2, and RL > 10 kto V+/2.  
Boldface limits apply at the temperature extremes.  
Symbol  
IO  
Parameter  
Conditions  
Sourcing VO = V+/2  
Min(2)  
Typ(3)  
Max(2)  
Units  
25  
42  
VIN = 100 mV  
15  
Sinking VO = V+/2  
VIN = 100 mV (LMP7707)  
Sinking VO = V+/2  
VIN = 100 mV  
25  
20  
42  
42  
Output Short Circuit Current(6)(7)  
mA  
25  
15  
(LMP7708/LMP7709)  
IS  
0.670  
1.4  
1.0  
1.2  
LMP7707  
LMP7708  
LMP7709  
1.8  
2.1  
Supply Current  
mA  
2.9  
3.5  
4.5  
SR  
Slew Rate(8)  
VO = 2 VPP,10% to 90%  
AV = 10  
5.1  
13  
V/μs  
GBWP  
THD+N  
Gain Bandwidth Product  
MHz  
f = 1 kHz, AV = 10, VO = 2.5V,  
RL = 10 kΩ  
Total Harmonic Distortion + Noise  
0.024  
%
en  
in  
Input-Referred Voltage Noise  
Input-Referred Current Noise  
f = 1 kHz  
9
1
nV/Hz  
fA/Hz  
f = 100 kHz  
(6) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is  
PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.  
(7) The short circuit test is a momentary test.  
(8) The number specified is the slower of positive and negative slew rates.  
5V Electrical Characteristics(1)  
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5V, V= 0V, VCM = V+/2, and RL > 10 kto V+/2.  
Boldface limits apply at the temperature extremes.  
Symbol  
Parameter  
Conditions  
Min(2)  
Typ(3)  
Max(2)  
Units  
VOS  
±37  
±200  
±500  
LMP7707  
Input Offset Voltage  
μV  
±32  
±220  
±520  
LMP7708/LMP7709  
TCVOS  
IB  
Input Offset Voltage Drift(4)  
Input Bias Current(4)(5)  
Input Offset Current  
±1  
±5  
±1  
μV/°C  
pA  
±0.2  
40°C TA 85°C  
40°C TA 125°C  
±50  
±400  
IOS  
40  
fA  
CMRR  
0V VCM 5V  
88  
130  
LMP7707  
83  
Common Mode Rejection Ratio  
Power Supply Rejection Ratio  
dB  
dB  
0V VCM 5V  
LMP7708/LMP7709  
2.7V V+ 12V, VO = V+/2  
86  
81  
130  
100  
PSRR  
86  
82  
(1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very  
limited self-heating of the device.  
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using the  
Statistical Quality Control (SQC) method.  
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary  
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped  
production material.  
(4) This parameter is specified by design and/or characterization and is not tested in production.  
(5) Positive current corresponds to current flowing into the device.  
4
Submit Documentation Feedback  
Copyright © 2007–2013, Texas Instruments Incorporated  
Product Folder Links: LMP7707 LMP7708 LMP7709  
LMP7707, LMP7708, LMP7709  
www.ti.com  
SNOSAW5B JUNE 2007REVISED MARCH 2013  
5V Electrical Characteristics(1) (continued)  
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5V, V= 0V, VCM = V+/2, and RL > 10 kto V+/2.  
Boldface limits apply at the temperature extremes.  
Symbol  
Parameter  
Conditions  
CMRR 80 dB  
Min(2)  
Typ(3)  
Max(2)  
Units  
CMVR  
0.2  
5.2  
Input Common-Mode Voltage Range  
V
CMRR 78 dB  
0.2  
5.2  
AVOL  
RL = 2 k(LMP7707)  
VO = 0.3V to 4.7V  
100  
96  
119  
119  
130  
60  
RL = 2 k(LMP7708/LMP7709)  
VO = 0.3V to 4.7V  
100  
94  
Open Loop Voltage Gain  
dB  
RL = 10 kΩ  
VO = 0.2V to 4.8V  
RL = 2 kto V+/2  
100  
96  
VO  
110  
LMP7707  
130  
RL = 2 kto V+/2  
60  
120  
LMP7708/LMP7709  
RL = 10 kto V+/2  
200  
mV  
Output Swing High  
from V+  
40  
50  
LMP7707  
70  
RL = 10 kto V+/2  
40  
60  
LMP7708/LMP7709  
120  
RL = 2 kto V+/2  
50  
80  
LMP7707  
90  
RL = 2 kto V+/2  
50  
120  
LMP7708/LMP7709  
RL = 10 kto V+/2  
190  
Output Swing Low  
mV  
30  
40  
LMP7707  
50  
RL = 10 kto V+/2  
30  
50  
LMP7708/LMP7709  
100  
IO  
Sourcing VO = V+/2  
40  
66  
VIN = 100 mV (LMP7707)  
28  
Sourcing VO = V+/2  
38  
66  
VIN = 100 mV (LMP7708/LMP7709)  
Sinking VO = V+/2  
VIN = 100 mV (LMP7707)  
Sinking VO = V+/2  
25  
Output Short Circuit Current(6)(7)  
mA  
mA  
40  
28  
76  
40  
23  
76  
VIN = 100 mV (LMP7708/LMP7709)  
IS  
0.715  
1.5  
2.9  
1.0  
1.2  
LMP7707  
LMP7708  
LMP7709  
1.9  
2.2  
Supply Current  
3.7  
4.6  
SR  
Slew Rate(8)  
VO = 4 VPP, 10% to 90%  
AV = 10  
5.6  
14  
V/μs  
GBWP  
THD+N  
Gain Bandwidth Product  
MHz  
f = 1 kHz, AV = 10, VO = 4.5V,  
RL = 10 kΩ  
Total Harmonic Distortion + Noise  
0.024  
%
en  
in  
Input-Referred Voltage Noise  
Input-Referred Current Noise  
f = 1 kHz  
9
1
nV/Hz  
fA/Hz  
f = 100 kHz  
(6) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is  
PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.  
(7) The short circuit test is a momentary test.  
(8) The number specified is the slower of positive and negative slew rates.  
Copyright © 2007–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Links: LMP7707 LMP7708 LMP7709  
LMP7707, LMP7708, LMP7709  
SNOSAW5B JUNE 2007REVISED MARCH 2013  
www.ti.com  
±5V Electrical Characteristics(1)  
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5V, V= 5V, VCM = 0V, and RL > 10 kto 0V.  
Boldface limits apply at the temperature extremes.  
Symbol  
Parameter  
Conditions  
Min(2)  
Typ(3)  
Max(2)  
Units  
VOS  
±37  
±200  
±500  
LMP7707  
Input Offset Voltage  
μV  
±37  
±220  
±520  
LMP7708/LMP7709  
TCVOS  
IB  
Input Offset Voltage Drift(4)  
Input Bias Current(4)(5)  
Input Offset Current  
±1  
±5  
1
μV/°C  
pA  
±0.2  
40°C TA 85°C  
40°C TA 125°C  
±50  
±400  
IOS  
40  
fA  
CMRR  
5V VCM 5V  
92  
138  
LMP7707  
88  
Common Mode Rejection Ratio  
dB  
5V VCM 5V  
LMP7708/LMP7709  
2.7V V+ 12V, V= 0V, VO = V+/2  
90  
86  
138  
98  
PSRR  
CMVR  
86  
82  
Power Supply Rejection Ratio  
dB  
V
CMRR 80 dB  
CMRR 78 dB  
5.2  
5.2  
5.2  
Input Common-Mode Voltage Range  
5.2  
AVOL  
RL = 2 k(LMP7707)  
VO = 4.7V to 4.7V  
100  
98  
121  
121  
134  
134  
90  
RL = 2 k(LMP7708/LMP7709)  
VO = 4.7V to 4.7V  
100  
94  
Open Loop Voltage Gain  
Output Swing High  
Output Swing Low  
dB  
RL = 10 k(LMP7707)  
VO = 4.8V to 4.8V  
100  
98  
RL = 10 k(LMP7708/LMP7709)  
VO = 4.8V to 4.8V  
100  
97  
VO  
RL = 2 kto 0V  
LMP7707  
150  
170  
RL = 2 kto 0V  
LMP7708/LMP7709  
90  
180  
290  
mV  
from V+  
RL = 10 kto 0V  
LMP7707  
40  
80  
100  
RL = 10 kto 0V  
LMP7708/LMP7709  
40  
80  
150  
RL = 2 kto 0V  
LMP7707  
90  
130  
150  
RL = 2 kto 0V  
LMP7708/LMP7709  
90  
180  
290  
mV  
from V–  
RL = 10 kto 0V  
40  
50  
LMP7707  
60  
RL = 10 kto 0V  
40  
60  
LMP7708/LMP7709  
110  
(1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very  
limited self-heating of the device.  
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using the  
Statistical Quality Control (SQC) method.  
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary  
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped  
production material.  
(4) This parameter is specified by design and/or characterization and is not tested in production.  
(5) Positive current corresponds to current flowing into the device.  
6
Submit Documentation Feedback  
Copyright © 2007–2013, Texas Instruments Incorporated  
Product Folder Links: LMP7707 LMP7708 LMP7709  
LMP7707, LMP7708, LMP7709  
www.ti.com  
SNOSAW5B JUNE 2007REVISED MARCH 2013  
±5V Electrical Characteristics(1) (continued)  
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5V, V= 5V, VCM = 0V, and RL > 10 kto 0V.  
Boldface limits apply at the temperature extremes.  
Symbol  
IO  
Parameter  
Conditions  
Min(2)  
Typ(3)  
Max(2)  
Units  
Sourcing VO = 0V  
50  
86  
VIN = 100 mV (LMP7707)  
35  
Sourcing VO = 0V  
VIN = 100 mV (LMP7708/LMP7709)  
48  
33  
86  
84  
Output Short Circuit Current(6)(7)  
mA  
Sinking VO = 0V  
50  
VIN = 100 mV  
35  
IS  
0.790  
1.7  
1.1  
1.3  
LMP7707  
LMP7708  
LMP7709  
2.1  
2.5  
Supply Current  
mA  
3.2  
4.2  
5.0  
SR  
Slew Rate(8)  
VO = 9 VPP, 10% to 90%  
AV = 10  
5.9  
15  
V/μs  
GBWP  
THD+N  
Gain Bandwidth Product  
MHz  
f = 1 kHz, AV = 10, VO = 9V,  
RL = 10 kΩ  
Total Harmonic Distortion + Noise  
0.024  
%
en  
in  
Input-Referred Voltage Noise  
Input-Referred Current Noise  
f = 1 kHz  
9
1
nV/Hz  
fA/Hz  
f = 100 kHz  
(6) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is  
PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.  
(7) The short circuit test is a momentary test.  
(8) The number specified is the slower of positive and negative slew rates.  
Copyright © 2007–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
7
Product Folder Links: LMP7707 LMP7708 LMP7709  
 
LMP7707, LMP7708, LMP7709  
SNOSAW5B JUNE 2007REVISED MARCH 2013  
www.ti.com  
Connection Diagrams  
Top View  
Top View  
+
8
1
2
5
1
V
NC  
OUT  
NC  
IN-  
7
+
V
-
2
3
-
V
6
5
3
4
+
IN+  
OUT  
NC  
-
+
4
-
IN-  
IN+  
V
Figure 2. LMP7707 5-Pin SOT-23  
See DBV Package  
Figure 3. LMP7707 8-Pin SOIC  
See D Package  
Top View  
Top View  
Figure 4. LMP7708 8-Pin VSSOP (See DGK  
Package)  
Figure 5. LMP7709 14-Pin TSSOP (See PW  
Package)  
LMP7709 14-Pin SOIC (See D Package)  
LMP7708 8-Pin SOIC (See D Package)  
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Typical Performance Characteristics  
Unless otherwise specified, TA = 25°C, VCM = VS/2, RL > 10 kconnected to (V++V)/2  
Offset Voltage Distribution  
TCVOS Distribution  
= 3V  
20  
16  
25  
20  
V
V
T
= 3V  
S
S
-40°C Ç T Ç 125°C  
= 25°C  
A
A
12  
8
15  
10  
5
4
0
0
-200  
-100  
0
100  
200  
-3  
-3  
-3  
-2  
-2  
-2  
-1  
0
1
2
3
3
3
OFFSET VOLTAGE (mV)  
TCV  
(mV/°C)  
OS  
Figure 6.  
Figure 7.  
TCVOS Distribution  
= 5V  
Offset Voltage Distribution  
20  
16  
25  
20  
15  
10  
5
V
T
= 5V  
V
S
S
= 25°C  
-40°C Ç T Ç 125°C  
A
A
12  
8
4
0
0
-200  
-100  
0
100  
200  
-1  
0
1
2
OFFSET VOLTAGE (mV)  
TCV  
(mV/°C)  
OS  
Figure 8.  
Figure 9.  
TCVOS Distribution  
= 10V  
Offset Voltage Distribution  
20  
16  
25  
20  
15  
10  
5
V
S
V
= 10V  
= 25°C  
S
-40°C Ç T Ç 125°C  
T
A
A
12  
8
4
0
0
-200  
-100  
0
100  
200  
-1  
0
1
2
OFFSET VOLTAGE (mV)  
TCV  
(mV/°C)  
OS  
Figure 10.  
Figure 11.  
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Typical Performance Characteristics (continued)  
Unless otherwise specified, TA = 25°C, VCM = VS/2, RL > 10 kconnected to (V++V)/2  
Offset Voltage vs. Temperature  
CMRR vs. Frequency  
-20  
200  
-40  
150  
100  
50  
-60  
V
= 3V  
S
-80  
0
-100  
-50  
V
S
= 5V  
-120  
-100  
-150  
-200  
-140  
V
= 10V  
S
-160  
10  
100  
1k  
10k  
100k  
1M  
-40 -20  
0
20 40 60 80 100 120125  
FREQUENCY (Hz)  
TEMPERATURE (°C)  
Figure 12.  
Figure 13.  
Offset Voltage vs. Supply Voltage  
Offset Voltage vs. VCM  
200  
150  
100  
200  
150  
100  
50  
V
= 3V  
S
-40°C  
25°C  
-40°C  
25°C  
50  
0
0
-50  
-50  
125°C  
-100  
-100  
-150  
-200  
125°C  
-150  
-200  
2
4
6
8
10  
12  
-0.5  
0
0.5  
1.5  
(V)  
2
2.5  
3
3.5  
1
V
CM  
SUPPLY VOLTAGE (V)  
Figure 14.  
Figure 15.  
Offset Voltage vs. VCM  
Offset Voltage vs. VCM  
200  
150  
200  
V
S
= 10V  
V
= 5V  
S
150  
100  
100  
-40°C  
25°C  
-40°C  
25°C  
50  
0
50  
0
-50  
-50  
-100  
-150  
-200  
-100  
-150  
125°C  
125°C  
3
-200  
-1  
0
1
2
3
4
5
6
5
-1  
0
1
2
4
6
7
8
9 10 11  
V
CM  
(V)  
V
CM  
(V)  
Figure 16.  
Figure 17.  
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Typical Performance Characteristics (continued)  
Unless otherwise specified, TA = 25°C, VCM = VS/2, RL > 10 kconnected to (V++V)/2  
Input Bias Current vs. VCM  
Input Bias Current vs. VCM  
300  
200  
100  
200  
100  
0
V
S
= 3V  
V
S
= 3V  
85°C  
-40°C  
0
-100  
-100  
-200  
-200  
-300  
125°C  
25°C  
1.5  
0
0
0
0.5  
1
1.5  
(V)  
2
2.5  
3
0
0.5  
1
2
2.5  
3
V
V
(V)  
CM  
CM  
Figure 18.  
Input Bias Current vs. VCM  
V
Figure 19.  
Input Bias Current vs. VCM  
300  
200  
100  
300  
200  
V
S
= 5V  
= 5V  
S
100  
0
85°C  
-40°C  
25°C  
0
-100  
-100  
-200  
-300  
-200  
-300  
125°C  
1
2
3
4
5
0
1
2
3
4
5
V
(V)  
V
CM  
(V)  
CM  
Figure 20.  
Figure 21.  
Input Bias Current vs. VCM  
= 10V  
Input Bias Current vs. VCM  
500  
300  
200  
V
S
V
= 10V  
S
250  
0
100  
0
85°C  
-40°C  
25°C  
-100  
-250  
-200  
-300  
125°C  
-500  
2
4
6
8
10  
0
2
4
6
8
10  
V
CM  
(V)  
V
CM  
(V)  
Figure 22.  
Figure 23.  
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Typical Performance Characteristics (continued)  
Unless otherwise specified, TA = 25°C, VCM = VS/2, RL > 10 kconnected to (V++V)/2  
Supply Current vs.  
PSRR vs. Frequency  
Supply Voltage (Per Channel)  
1.2  
1
120  
100  
80  
125°C  
25°C  
0.8  
0.6  
0.4  
-40°C  
60  
40  
0.2  
0
20  
A
= +10  
V
10  
100  
1k  
10k  
100k  
1M  
2
4
6
8
10  
12  
FREQUENCY (Hz)  
SUPPLY VOLTAGE (V)  
Figure 24.  
Figure 25.  
Sinking Current vs. Supply Voltage  
Sourcing Current vs. Supply Voltage  
120  
120  
100  
-40°C  
25°C  
-40°C  
100  
25°C  
80  
60  
40  
80  
60  
40  
125°C  
125°C  
20  
0
20  
0
2
4
6
8
10  
12  
2
4
6
8
10  
12  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
Figure 26.  
Figure 27.  
Output Voltage vs. Output Current  
Slew Rate vs. Supply Voltage  
8.0  
7.5  
+
A
V
= +10  
V
V
T
A
= -40°C, 25°C, 125C  
= 200 mV  
= 10 kW  
= 10 pF  
IN  
+
(V ) -1  
7.0  
R
C
L
L
6.5  
+
(V ) -2  
6.0  
5.5  
3V  
ö
ö
5.0  
2
1
0
4.5  
4.0  
3.5  
3.0  
V
S
= 3V, 5V, 10V  
2
4
6
8
10  
12  
0
20  
40  
60  
80  
100  
SUPPLY VOLTAGE (V)  
OUTPUT CURRENT (mA)  
Figure 28.  
Figure 29.  
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Typical Performance Characteristics (continued)  
Unless otherwise specified, TA = 25°C, VCM = VS/2, RL > 10 kconnected to (V++V)/2  
Open Loop Frequency Response  
Open Loop Frequency Response  
100  
225  
80  
180  
GAIN  
100  
80  
60  
40  
20  
0
225  
180  
135  
90  
PHASE  
135  
60  
V
= 10V  
40  
90  
S
C
= 22 pF  
L
-40°C  
20  
0
45  
0
45  
PHASE  
0
-20  
-40  
-60  
-45  
-90  
-135  
A
V
= -10  
V
= 3V  
V
S
S
-45  
-20  
= 5V  
C
= 100 pF  
L
A
V
= -10  
V
S
25°C  
R
C
= 10 kW  
L
L
= 3V, 5V, 10V  
= 22 pF, 47 pF, 100 pF  
-90  
-40  
-60  
= 22 pF  
125°C  
C
L
-135  
1k  
10k  
100k  
1M  
10M  
100M  
1k  
10k  
100k  
1M  
10M  
100M  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 30.  
Figure 31.  
Small Signal Step Response, AV = 10  
Large Signal Step Response, AV = 10  
V
= 5V  
V
= 5V  
S
S
f = 10 kHz  
f = 10 kHz  
A
V
= +10  
A
V
= +10  
V
V
= 200 mV  
= 10 kW  
= 10 pF  
= 10 mV  
= 10 kW  
= 10 pF  
IN  
PP  
IN  
PP  
R
R
L
L
L
L
C
C
10 Ûs/DIV  
10 Ûs/DIV  
Figure 32.  
Figure 33.  
Large Signal Step Response, AV = 100  
Small Signal Step Response, AV = 100  
V
S
= 5V  
V
= 5V  
S
f = 10 kHz  
f = 10 kHz  
A
V
= +100  
= 20 mV  
= 10 kW  
= 10 pF  
A
V
= +100  
= 1 mV  
= 10 kW  
= 10 pF  
V
V
IN  
PP  
IN  
PP  
R
C
R
L
L
L
L
C
10 Ûs/DIV  
10 Ûs/DIV  
Figure 34.  
Figure 35.  
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Typical Performance Characteristics (continued)  
Unless otherwise specified, TA = 25°C, VCM = VS/2, RL > 10 kconnected to (V++V)/2  
Open Loop Gain vs.  
Output Voltage Swing  
Input Voltage Noise vs. Frequency  
120  
100  
80  
60  
40  
20  
0
150  
140  
130  
120  
V
= 10V  
S
V
= 5V  
S
R
L
= 10 kW  
110  
100  
90  
V
= 3V  
S
V
= 3V  
S
V
= 5V  
S
80  
R
L
= 2 kW  
70  
V
= 10V  
S
60  
500  
1k  
100  
10k  
100k  
1
10  
400  
300  
200  
100  
0
FREQUENCY (Hz)  
OUTPUT SWING FROM RAIL (mV)  
Figure 36.  
Figure 37.  
Output Swing High vs.  
Supply Voltage  
Output Swing Low vs.  
Supply Voltage  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
R
L
= 10 kW  
R
L
= 10 kW  
25°C  
125°C  
-40°C  
-40°C  
25°C  
125°C  
2
4
6
8
10  
12  
2
4
6
8
10  
12  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
Figure 38.  
Figure 39.  
Output Swing High vs.  
Supply Voltage  
Output Swing Low vs.  
Supply Voltage  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
R
= 2 kW  
R
L
= 2 kW  
L
25°C  
25°C  
125°C  
125°C  
-40°C  
-40°C  
2
4
6
8
10  
12  
2
4
6
8
10  
12  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
Figure 40.  
Figure 41.  
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Typical Performance Characteristics (continued)  
Unless otherwise specified, TA = 25°C, VCM = VS/2, RL > 10 kconnected to (V++V)/2  
THD+N vs. Frequency  
THD+N vs. Output Voltage  
100  
1
V
= 5V  
S
V
= 4.5V  
OUT  
PP  
R
= 100 kW  
L
Noise band = 500 kHz  
10  
1
0.1  
0.1  
0.01  
V
= 5V  
S
f = 1 kHz  
R
Noise band = 500 kHz  
= 100 kW  
L
0.01  
0.01  
0.1  
1
10  
10  
100  
1k  
10k  
100k  
V
(V )  
OUT PP  
FREQUENCY (Hz)  
Figure 42.  
Figure 43.  
Crosstalk Rejection Ratio vs.  
Frequency(LMP7708/LMP7709)  
140  
V
S
= 12V  
120  
100  
80  
V
= 5V  
S
V
S
= 3V  
60  
40  
100  
1k  
10k  
100k  
1M  
FREQUENCY (Hz)  
Figure 44.  
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APPLICATION INFORMATION  
LMP7707/LMP7708/LMP7709  
The LMP7707/LMP7708/LMP7709 devices are single, dual and quad low offset voltage, rail-to-rail input and  
output precision amplifiers each with a CMOS input stage and the wide supply voltage range of 2.7V to 12V. The  
LMP7707/LMP7708/LMP7709 have a very low input bias current of only ±200 fA at room temperature.  
The wide supply voltage range of 2.7V to 12V over the extensive temperature range of 40°C to 125°C makes  
either the LMP7707, LMP7708 or LMP7709 an excellent choice for low voltage precision applications with  
extensive temperature requirements.  
The LMP7707/LMP7708/LMP7709 have only ±37 µV of typical input referred offset voltage and this offset is  
ensured to be less than ±500 µV for the single and ±520 µV for the dual and quad over temperature. This  
minimal offset voltage allows more accurate signal detection and amplification in precision applications.  
The low input bias current of only ±200 fA along with the low input referred voltage noise of 9 nV/Hz give the  
LMP7707/LMP7708/LMP7709 superior qualities for use in sensor applications. Lower levels of noise introduced  
by the amplifier mean better signal fidelity and a higher signal-to-noise ratio.  
The LMP7707/LMP7708/LMP7709 are stable for a gain of 6 or higher. With proper compensation though, the  
LMP7707, LMP7708 or LMP7709 can be operational at a gain of ±1 and still maintain much faster slew rates  
than comparable fully compensated amplifiers. The increase in bandwidth and slew rate is obtained without any  
additional power consumption.  
Texas Instruments is heavily committed to precision amplifiers and the market segment they serve. Technical  
support and extensive characterization data is available for sensitive applications or applications with a  
constrained error budget.  
The LMP7707 is offered in the space-saving 5-pin SOT-23 and 8-pin SOIC packages, the LMP7708 comes in the  
8-pin VSSOP and 8-pin SOIC packages, and the LMP7709 is offered in the 14-pin TSSOP and 14-pin SOIC  
packages. These small packages are ideal solutions for area constrained PC boards and portable electronics.  
CAPACITIVE LOAD  
The LMP7707/LMP7708/LMP7709 devices can each be connected as a non-inverting voltage follower. This  
configuration is the most sensitive to capacitive loading.  
The combination of a capacitive load placed on the output of an amplifier along with the amplifier’s output  
impedance creates a phase lag which in turn reduces the phase margin of the amplifier. If the phase margin is  
significantly reduced, the response will be either underdamped or it will oscillate.  
In order to drive heavier capacitive loads, an isolation resistor, RISO, as shown in the circuit in Figure 45 should  
be used. By using this isolation resistor, the capacitive load is isolated from the amplifier’s output, and hence, the  
pole caused by CL is no longer in the feedback loop. The larger the value of RISO, the more stable the output  
voltage will be. If values of RISO are sufficiently large, the feedback loop will be stable, independent of the value  
of CL. However, larger values of RISO result in reduced output swing and reduced output current drive.  
R
ISO  
V
+
-
IN  
V
OUT  
R
R
1
2
C
L
Figure 45. Isolating Capacitive Load  
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INPUT CAPACITANCE  
CMOS input stages inherently have low input bias current and higher input referred voltage noise. The  
LMP7707/LMP7708/LMP7709 enhances this performance by having the low input bias current of only ±200 fA,  
as well as a very low input referred voltage noise of 9 nV/Hz. In order to achieve this a large input stage has  
been used. This large input stage increases the input capacitance of the LMP7707/LMP7708/LMP7709. The  
typical value of this input capacitance, CIN, for the LMP7707/LMP7708/LMP7709 is 25 pF. The input capacitance  
will interact with other impedances such as gain and feedback resistors, which are seen on the inputs of the  
amplifier, to form a pole. This pole will have little or no effect on the output of the amplifier at low frequencies and  
DC conditions, but will play a bigger role as the frequency increases. At higher frequencies, the presence of this  
pole will decrease phase margin and will also cause gain peaking. In order to compensate for the input  
capacitance, care must be taken in choosing the feedback resistors. In addition to being selective in picking  
values for the feedback resistor, a capacitor can be added to the feedback path to increase stability.  
C
F
R
2
R
1
-
+
C
IN  
V
+
-
IN  
+
V
OUT  
-
Figure 46. Compensating for Input Capacitance  
Using this compensation method will have an impact on the high frequency gain of the op amp, due to the  
frequency dependent feedback of this amplifier. Low gain settings can, again, introduce instability issues.  
DIODES BETWEEN THE INPUTS  
The LMP7707/LMP7708/LMP7709 have a set of anti-parallel diodes between the input pins, as shown in  
Figure 47. These diodes are present to protect the input stage of the amplifier. At the same time, they limit the  
amount of differential input voltage that is allowed on the input pins. A differential signal larger than one diode  
voltage drop might damage the diodes. The differential signal between the inputs needs to be limited to ±300 mV  
or the input current needs to be limited to ±10 mA. Exceeding these limits will damage the part.  
+
+
V
V
D
1
ESD  
IN  
ESD  
ESD  
R
1
R
2
-
+
IN  
ESD  
D
2
-
-
V
R
1
= R = 130Ö  
2
V
Figure 47. Input of the LMP7707  
TOTAL NOISE CONTRIBUTION  
The LMP7707/LMP7708/LMP7709 have very low input bias current, very low input current noise and very low  
input voltage noise. As a result, these amplifiers are ideal choices for circuits with high impedance sensor  
applications.  
Figure 48 shows the typical input noise of the LMP7707/LMP7708/LMP7709 as a function of source resistance.  
The total noise at the input can be calculated using Equation 1.  
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eni = en2+ e2i + et2  
where  
eni is the total noise on the input  
en denotes the input referred voltage noise  
ei is the voltage drop across source resistance due to input referred current noise or ei = RS * in  
et is the thermal noise of the source resistance  
(1)  
The input current noise of the LMP7707/LMP7708/LMP7709 is so low that it will not become the dominant factor  
in the total noise unless source resistance exceeds 300 M, which is an unrealistically high value.  
As is evident in Figure 48, at lower RS values, the total noise is dominated by the amplifier’s input voltage noise.  
Once RS is larger than a few kilo-Ohms, then the dominant noise factor becomes the thermal noise of RS. As  
mentioned before, the current noise will not be the dominant noise factor for any practical application.  
1000  
100  
e
ni  
e
n
10  
e
t
e
i
1
0.1  
10k  
(W)  
1M  
10  
1k  
100k  
10M  
100  
R
S
Figure 48. Total Input Noise  
HIGH IMPEDANCE SENSOR INTERFACE  
Many sensors have high source impedances that may range up to 10 M. The output signal of sensors often  
needs to be amplified or otherwise conditioned by means of an amplifier. The input bias current of this amplifier  
can load the sensor’s output and cause a voltage drop across the source resistance as shown in Figure 49,  
where VIN + = VS – IBIAS*RS  
The last term, IBIAS*RS, shows the voltage drop across RS. To prevent errors introduced to the system due to this  
voltage, an op amp with very low input bias current must be used with high impedance sensors. This is to keep  
the error contribution by IBIAS*RS less than the input voltage noise of the amplifier, so that it will not become the  
dominant noise factor. The LMP7707/LMP7708/LMP7709 have very low input bias current, typically 200 fA.  
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SENSOR  
+
V
I
B
R
S
V
+
IN  
+
-
+
-
V
S
R
R
1
2
-
V
Figure 49. Noise Due to IBIAS  
USAGE OF DECOMPENSATED AMPLIFIERS  
This section discusses the differences between compensated and decompensated op amps and presents the  
advantages of decompensated amplifiers. In high gain applications decompensated amplifiers can be used  
without any changes compared to standard amplifiers. However, for low gain applications special frequency  
compensation measures have to be taken to ensure stability.  
Feedback circuit theory is discussed in detail, in particular as it applies to decompensated amplifiers. Bode plots  
are presented for a graphical explanation of stability analysis. Two solutions are given for creating a feedback  
network for decompensated amplifiers when relatively low gains are required: A simple resistive feedback  
network and a more advanced frequency dependent feedback network with improved noise performance. Finally,  
a design example is presented resulting in a practical application. The results are compared to fully compensated  
amplifiers (Texas Instruments LMP7701/LMP7702/LMP7704).  
COMPENSATED AMPLIFIERS  
A (fully) compensated op amp is designed to operate with good stability down to gains of ±1. For this reason, the  
compensated op amp is also called a unity gain stable op amp.  
Figure 50 shows the Open Loop Response of a compensated amplifier.  
80  
100  
80  
100  
120  
140  
160  
60  
40  
20  
0
180  
200  
-20  
1k  
10k  
100k  
1M  
10M  
100M  
FREQUENCY (Hz)  
Figure 50. Open Loop Frequency Response Compensated Amplifier (LMP7701)  
This amplifier is unity gain stable, because the phase shift is still < 180°, when the gain crosses 0 dB (unity gain).  
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Stability can be expressed in two different ways:  
Phase MarginThis is the phase difference between the actual phase shift and 180°, at the point where the gain  
is 0 dB.  
Gain MarginThis is the gain difference relative to 0 dB, at the frequency where the phase shift crosses the 180°.  
The amplifier is supposed to be used with negative feedback but a phase shift of 180° will turn the negative  
feedback into positive feedback, resulting in oscillations. A phase shift of 180° is not a problem when the gain is  
smaller than 0 dB, so the critical point for stability is 180° phase shift at 0 dB gain. The gain margin and phase  
margin express the margin enhancing overall stability between the amplifiers response and this critical point.  
DECOMPENSATED AMPLIFIERS  
Decompensated amplifiers, such as the LMP7707/LMP7708/LMP7709, are designed to maximize the bandwidth  
and slew rate without any additional power consumption over the unity gain stable op amp. That is, a  
decompensated op amp has a higher bandwidth to power ratio than an equivalent compensated op amp.  
Compared with the unity gain stable amplifier, the decompensated version has the following advantages:  
1. A wider closed loop bandwidth  
2. Better slew rate due to reduced compensation capacitance within the op amp  
3. Better Full Power Bandwidth, given with Equation 2  
SR  
FPBW =  
í
2
VP  
(2)  
Figure 51 shows the frequency response of the decompensated amplifier.  
80  
100  
80  
100  
120  
140  
160  
60  
40  
20  
0
180  
200  
-20  
1k  
10k  
100k  
1M  
10M  
100M  
FREQUENCY (Hz)  
Figure 51. Open Loop Frequency Response Decompensated Amplifier (LMP7707)  
As shown in Figure 51, the reduced internal compensation moves the first pole to higher frequencies. The  
second open loop pole for the LMP7707/LMP7708/LMP7709 occurs at 4 MHz. The extrapolated unity gain (see  
dashed line in Figure 51) occurs at 14 MHz. An ideal two pole system would give a phase margin of > 45° at the  
location of the second pole. Unfortunately, the LMP7707/LMP7708/LMP7709 have parasitic poles close to the  
second pole, giving a phase margin closer to 0°. The LMP7707/LMP7708/LMP7709 can be used at frequencies  
where the phase margin is > 45°. The frequency where the phase margin is 45° is at 2.4 MHz. The  
corresponding value of the open loop gain (also called GMIN) is 6 times.  
Stability has only to do with the loop gain and not with the forward gain (G) of the op amp. For high gains, the  
feedback network is attenuating and this reduces the loop gain; therefore the op amp will be stable for G > GMIN  
and no special measures are required. For low gains the feedback network attenuation may not be sufficient to  
ensure loop stability for a decompensated amplifier. However, with an external compensation network  
decompensated amplifiers can still be made stable while maintaining their advantages over unity gain stable  
amplifiers.  
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EXTERNAL COMPENSATION FOR GAINS LOWER THAN GMIN.  
This section explains how decompensated amplifiers can be used in configurations requiring a gain lower than  
GMIN. In the next sections the concept of the feedback factor is introduced. Subsequently, an explanation is given  
how stability can be determined using the frequency response curve of the op amp together with the feedback  
factor. Using the circuit theory, it will be explained how decompensated amplifiers can be stabilized at lower  
gains.  
FEEDBACK THEORY  
Stability issues can be analyzed by verifying the loop gain function GF, where G is the open loop gain of the  
amplifier and F is the feedback factor of the feedback circuit.  
The feedback function (F) of arbitrary electronic circuits, as shown in Figure 52, is defined as the ratio of the  
input and output signal of the same circuit.  
R
R
F
F
R
1
R
1
V
V
V
V
A
B
A
-
-
V
V
OUT  
OUT  
B
V
IN  
+
+
V
IN  
Figure 52. Op Amp with Resistive Feedback. (a) Non-inverting (b) Inverting  
The feedback function for a three-terminal op amp as shown in Figure 52 is the feedback voltage VA – VB across  
the op amp input terminals relative to the op amp output voltage, VOUT. That is  
VA - VB  
F =  
VOUT  
(3)  
GRAPHICAL EXPLANATION OF STABILITY ANALYSIS  
Stability issues can be observed by verifying the closed loop gain function GF. In the frequencies of interest, the  
open loop gain (G) of the amplifier is a number larger than 1 and therefore positive in dB. The feedback factor (F)  
of the feedback circuit is an attenuation and therefore negative in dB. For calculating the closed loop gain GF in  
dB we can add the values of G and F (both in dB).  
One practical approach to stabilizing the system, is to assign a value to the feedback factor F such that the  
remaining loop gain GF equals one (unity gain) at the frequency of GMIN. This realizes a phase margin of 45° or  
greater. This results in the following requirement for stability: 1/F > GMIN. The inverse feedback factor 1/F is  
constant over frequency and should intercept the open loop gain at a value in dB that is greater than or equal to  
GMIN  
The inverse feedback factor for both configurations shown in Figure 52, is given by:  
RF  
.
1
= 1 +  
F
R1  
(4)  
(5)  
(6)  
The closed loop gain for the non-inverting configuration (a) is:  
RF  
R1  
1
F
ACL = 1 +  
=
The closed loop gain for the inverting configuration (b) is:  
RF  
1
ACL = -  
= 1 -  
R1  
F
For stable operation the phase margin must be equal to or greater than 45°. The corresponding closed loop gain  
GMIN, for a non-inverting configuration, is  
|ACL|(min) = Gmin  
(7)  
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For an inverting configuration:  
|ACL|(min) = Gmin - 1  
(8)  
If R1 and RF and are chosen so that the closed loop gain is lower than the minimum gain required for stability,  
then 1/F intersects the open loop gain curve for a value that is lower than GMIN. For example, assume the GMIN is  
equal to 10 V/V (20 dB). This is shown as the dashed line in Figure 53. The resistor choice of RF = R1 = 2 kΩ  
makes the inverse feedback equal 2 V/V (6 dB), shown in Figure 53 as the solid line. The intercept of G and 1/F  
represents the frequency for which the loop gain is identical to 1 (0 dB). Consequently, the total phase shift at the  
frequency of this intercept determines the phase margin and the overall system stability. In this system example  
1/F crosses the open loop gain at a frequency which is larger than the frequency where GMIN occurs, therefore  
this system has less than 45° phase margin and is most likely instable.  
A
OL  
G
= 20 dB  
= 6 dB  
R
min  
F
1
F
= 1 +  
1
F
R
1
f
1
f
2
Figure 53. 1/F for RF = R1 and Open Loop Gain Plot  
RESISTIVE COMPENSATION  
A straightforward way to achieve a stable amplifier configuration is to add a resistor RC between the inverting and  
the non-inverting inputs as shown in Figure 54.  
R
F
R
1
-
V
OUT  
R
C
+
Figure 54. Op Amp with Compensation Resistor between Inputs  
This additional resistor RC will not affect the closed loop gain of the amplifier but it will have positive impact on  
the feedback network.  
The inverse feedback function of this circuit is:  
1
RF  
RF  
RF  
= 1 +  
= 1 +  
+
Rc  
F
R1//Rc  
R1  
(9)  
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Proper selection of the value of RC results in the shifting of the 1/F function to GMIN or greater, thus fulfilling the  
condition for circuit stability. The compensation technique of reducing the loop gain may be used to stabilize the  
circuit for the values given in the previous example, that is GMIN = 20 dB and RF = R1 = 2 k. A resistor value of  
250 applied between the amplifier inputs shifts the 1/F curve to the value GMIN (20 dB) as shown by the  
dashed line in Figure 55. This results in overall stability for the circuit. This figure shows a combination of the  
open and closed loop gain and the inverse feedback function.  
This example, represented by Figure 52 and Figure 53, is generic in the sense that the GMIN as specified did not  
distinguish between inverting and non-inverting configurations.  
A
OL  
G
= 20 dB  
= 6 dB  
min  
R
R
F
F
1 +  
f
1
f
2
Figure 55. Compensation with Reduced Loop Gain  
The technique of reducing loop gain to stabilize a decompensated op amp circuit will be illustrated using the non-  
inverting input configuration shown in Figure 56.  
R
F
R
1
V
X
-
V
OUT  
R
C
+
V
IN  
Figure 56. Closed Loop Gain Analysis with RC  
The effect of the choice of resistor RC in Figure 56 on the closed loop gain can be analyzed in the following  
manner:  
Assume the voltage at the inverting input of the op amp is VX. Then,  
(VIN œ VX) G = VOUT  
where  
G is the open loop gain of the op amp  
(10)  
(11)  
VX  
R1  
VX - VIN VOUT - VX  
=
+
RC  
RF  
Combining Equation 10, Equation 11, and Equation 9 produces the following equation for closed loop gain,  
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RF  
1 +  
VOUT  
VIN  
R1  
=
1
GF  
1 +  
(12)  
By inspection of Equation 12, RC does not affect the ideal closed loop gain. In this example where RF = R1, the  
closed loop gain remains at 6 dB as long as GF >> 1. The closed loop gain curve is shown as the solid line in  
Figure 55.  
The addition of RC affects the circuit in the following ways:  
1.  
1/F is moved to a higher gain, resulting in overall system stability.  
However, adding RC results in reduced loop gain and increased noise gain. The noise gain is defined as the  
inverse of the feedback factor, F. The noise gain is the gain from the amplifier input referred noise to the output.  
In effect, loop gain is traded for stability.  
2.  
The ideal closed loop gain retains the same value as the circuit without the compensation resistor RC.  
LEAD-LAG COMPENSATION  
This section presents a more advanced compensation technique that can be used to stabilize amplifiers. The  
increased noise gain of the prior circuit is prevented by reducing the low frequency attenuation of the feedback  
circuit. This compensation method is called Lead-Lag compensation. Lead-lag compensation components will be  
analyzed and a design example using this procedure will be discussed.  
The feedback function in a lead-lag compensation circuit is shaped using a resistor and a capacitor. They are  
chosen in a way that ensures sufficient phase margin.  
Figure 57 shows a Bode plot containing: the open loop gain of the decompensated amplifier, a feedback function  
without compensation and a feedback function with lead-lag compensation.  
100  
80  
-20 dB/dec  
60  
40  
20 dB/dec  
1/F with compensation  
20  
0
1/F without compensation  
1M  
FREQUENCY (Hz)  
Figure 57. Bode Plot of Open Loop gain G and 1/F with and without Lead-Lag Compensation  
The shaped feedback function presented in Figure 57 can be realized using the amplifier configuration in  
Figure 58. Note that resistor RP is only used for compensation of the input voltage caused by the IBIAS current. RP  
can be used to introduce more freedom for calculating the lead-lag components. This will be discussed later in  
this section.  
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R
F
R
1
-
R
C
C
+
R
P
Figure 58. LMP7707 with Lead-Lag Compensation for Inverting Configuration  
The inverse feedback factor of the circuit in Figure 58 is:  
1 + s(RC + R1//RF + RP)C  
1 + sRCC  
RF  
R1  
1
F
= (1 +  
)(  
)
(13)  
(14)  
(15)  
The pole of the inverse feedback function is located at:  
1
fP =  
2íRCC  
The zero of the inverse feedback function is located at:  
1
fZ =  
2í(RC + R1//RF + RP) C  
The low frequency inverse feedback factor is given by:  
RF  
1
F
= 1 +  
f = 0  
R1  
(16)  
(17)  
The high frequency inverse feedback factor is given by:  
RF  
R1  
RP + R1//RF  
RC  
1
F
= (1 +  
)(1 +  
)
f = ñ  
From these formulas, we can tell that  
1. The 1/F's zero is located at a lower frequency compared to 1/F's pole.  
2. The intersection point of 1/F and the open loop gain G is determined by the choice of resistor values for RP  
and RC if the values of R1 and RF are set before compensation.  
3. This procedure results in the creation of a pole-zero pair, the positions of which are interdependent.  
4. This pole-zero pair is used to:  
Raise the 1/F value to a greater value in the region immediately to the left of its intercept with the A  
function in order to meet the Gmin requirement.  
Achieve the preceding with no additional loop phase delay.  
5. The location of the 1/F zero is determined by the following conditions:  
The value of 1/F at low frequency.  
The value of 1/F at the intersection point.  
The location of 1/F pole.  
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Note that the constraint 1/F Gmin needs to be satisfied only in the vicinity of the intersection of G and 1/F; 1/F  
can be shaped elsewhere as needed. Two rules must be satisfied in order to maintain adequate phase margin.  
Rule 1The plot of 1/F should intersect with the plot of the open loop gain at a value larger than GMIN. At that  
point, the open loop gain G has a phase margin of 45°.  
The location f2 in Figure 59 illustrates the proper intersection point for the LMP7707/LMP7708/LMP7709  
using the circuit of Figure 58. The intersection of G and 1/F at the op amp's second pole location is the  
45° phase margin reference point.  
Rule 2The 1/F pole (see Figure 59) should be positioned at the frequency that is at least one decade below the  
intersection point f2 of 1/F and G. This positioning takes full advantage of the 90° of phase lead brought  
about by the 1/F pole. This additional phase lead accompanies the increase in magnitude of 1/F observed  
at frequencies greater than the 1/F pole.  
The resulting system has approximately 45° of phase margin, based upon the fact that the open loop gain's  
dominant pole and the second pole are more than one decade apart and that the open loop gain has no other  
pole within one decade of its intersection point with 1/F. If there is a third pole in the open loop gain G at a  
frequency greater than f2 and if it occurs less than a decade above that frequency, then there will be an effect on  
phase margin.  
DESIGN EXAMPLE  
The input lead-lag compensation method can be applied to an application using the LMP7707, LMP7708 or  
LMP7709 in an inverting configuration, as shown in Figure 58.  
100  
80  
60  
40  
1/F  
20  
0
G
MIN  
-20  
1k  
10k  
100k  
f /10  
1M  
10M  
100M  
f
2
2
FREQUENCY (Hz)  
Figure 59. LMP7707 Open Loop Gain and 1/F Lead-Lag Feedback Network.  
Figure 59 shows that GMIN = 16 dB and f2 (intersection point) = 2.4 MHz.  
A gain of 6 dB (or a magnitude of –1) is well below the LMP7707’s GMIN. Without external lead-lag compensation,  
the inverse feedback factor is found using Equation 4 which applies to both inverting and non-inverting  
configurations. Unity gain implementation for the inverting configuration means RF = R1, and 1/F = 2 (6 dB).  
Procedure:  
The compensation circuit shown in Figure 58 is implemented. The inverse feedback function is shaped by the  
solid line in Figure 59. The 1/F plot is 6 dB at low frequencies. At higher frequencies, it is made to intersect the  
loop gain G at frequency f2 with gain amplitude of 16 dB (GMIN), which equals a magnitude of six times. This  
follows the recommendations in Rule 1. The 1/F pole fp is set one decade below the intersection point (f2 = 2.4  
MHz) as given in Rule 2, and results in a frequency fp = 240 kHz. The next steps should be taken to calculate the  
values of the compensation components:  
Step 1)Set 1/F equal to GMIN using Equation 17. This gives a value for resistor RC.  
Step 2)Set the 1/F pole one decade below the intersection point using Equation 14. This gives a value for  
capacitor C.  
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This method uses bode plot approximation. Some fine-tuning may be needed to get the best results.  
Calculations:  
As described in Step 1, use Equation 17:  
RF  
R1  
RP + R1//RF  
RC  
1
F
= (1 +  
)(1 +  
)
= 6 V/V  
f = ñ  
(18)  
(19)  
Now substitute RF/R1 = 1 into the equation above since this is a unity gain, inverting amplifier, then  
RP + R1//RF = 2 RC  
According to Step 2 use Equation 14:  
1
fP =  
= 240 kHz  
2pRCC  
(20)  
(21)  
which leads to:  
1
C =  
2pfRC  
Choose a value of RF that is below 2 k, in order to minimize the possibility of shunt capacitance across high  
value resistors producing a negative effect on high frequency operation. If RF = R1 = 1 k, then RF // R1 = 500 .  
For simplicity, choose RP = 0 . The value of RC is derived from Equation 19 and has a value of RC = 250 .  
This is not a standard value. A value of RC = 330 is a first choice (using 10% tolerance components).  
The value of capacitor C is 2.2 nF. This value is significantly higher than the parasitic capacitances associated  
with passive components and board layout, and is therefore a good solution.  
Bench results:  
For bench evaluation the LMP7707 in an inverting configuration has been verified under three different  
conditions:  
Uncompensated  
Lead-lag compensation resulting in a phase margin of 45°  
Lead lag overcompensation resulting in a phase margin larger than 45°  
The calculated components for these three conditions are  
Condition  
RC  
C
Uncompensated  
Compensated  
NA  
NA  
330 Ω  
240 Ω  
2.2 nF  
3.3 nF  
Overcompensated  
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Figure 60 shows the results of the compensation of the LMP7707.  
uncompensated  
0
0
compensated  
0
overcompensated  
TIME (1 ms/DIV)  
Figure 60. Bench Results for Lead- Lag Compensation  
The top waveform shows the output response of a uncompensated LMP7707 using no external compensation  
components. This trace shows ringing and is unstable (as expected). The middle waveform is the response of a  
compensated LMP7707 using the compensation components calculated with the described procedure. The  
response is reasonably well behaved. The bottom waveform shows the response of an overcompensated  
LMP7707.  
Finally, Figure 61 compares the step response of the compensated LMP7707 to that of the unity gain stable  
LMP7701. The increase in dynamic performance is clear.  
0.8  
0.4  
0.0  
LMP7701  
-0.4  
-0.8  
LMP7707 compensated  
TIME (1 ms/DIV)  
Figure 61. Bench Results for Comparison of LMP7701 and LMP7707  
The application of input lead-lag compensation to a decompensated op amp enables the realization of circuit  
gains of less than the minimum specified by the manufacturer. This is accomplished while retaining the  
advantageous speed versus power characteristic of decompensated op amps.  
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REVISION HISTORY  
Changes from Revision A (March 2013) to Revision B  
Page  
Changed layout of National Data Sheet to TI format .......................................................................................................... 28  
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PACKAGE OPTION ADDENDUM  
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10-Dec-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
LMP7707MA/NOPB  
LMP7707MAX/NOPB  
ACTIVE  
SOIC  
SOIC  
D
D
8
8
95  
RoHS & Green  
SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
LMP77  
07MA  
ACTIVE  
2500 RoHS & Green  
SN  
LMP77  
07MA  
LMP7707MF/NOPB  
LMP7707MFX/NOPB  
LMP7708MA/NOPB  
ACTIVE  
ACTIVE  
ACTIVE  
SOT-23  
SOT-23  
SOIC  
DBV  
DBV  
D
5
5
8
1000 RoHS & Green  
3000 RoHS & Green  
SN  
SN  
SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 125  
-40 to 125  
-40 to 125  
AH4A  
AH4A  
95  
RoHS & Green  
LMP77  
08MA  
LMP7708MAX/NOPB  
ACTIVE  
SOIC  
D
8
2500 RoHS & Green  
1000 RoHS & Green  
SN  
Level-1-260C-UNLIM  
-40 to 125  
LMP77  
08MA  
LMP7708MM/NOPB  
LMP7708MME/NOPB  
LMP7708MMX/NOPB  
LMP7709MA/NOPB  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
VSSOP  
VSSOP  
VSSOP  
SOIC  
DGK  
DGK  
DGK  
D
8
8
SN  
SN  
SN  
SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 125  
-40 to 125  
-40 to 125  
AJ4A  
AJ4A  
AJ4A  
250  
3500 RoHS & Green  
55 RoHS & Green  
2500 RoHS & Green  
94 RoHS & Green  
2500 RoHS & Green  
RoHS & Green  
8
14  
LMP7709  
MA  
LMP7709MAX/NOPB  
LMP7709MT/NOPB  
LMP7709MTX/NOPB  
ACTIVE  
ACTIVE  
ACTIVE  
SOIC  
D
14  
14  
14  
SN  
SN  
SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
LMP7709  
MA  
TSSOP  
TSSOP  
PW  
PW  
-40 to 125  
-40 to 125  
LMP77  
09MT  
LMP77  
09MT  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
9-Apr-2022  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LMP7707MAX/NOPB  
LMP7707MF/NOPB  
LMP7707MFX/NOPB  
LMP7708MAX/NOPB  
LMP7708MM/NOPB  
LMP7708MME/NOPB  
LMP7708MMX/NOPB  
LMP7709MAX/NOPB  
LMP7709MTX/NOPB  
SOIC  
SOT-23  
SOT-23  
SOIC  
D
8
5
2500  
1000  
3000  
2500  
1000  
250  
330.0  
178.0  
178.0  
330.0  
178.0  
178.0  
330.0  
330.0  
330.0  
12.4  
8.4  
6.5  
3.2  
3.2  
6.5  
5.3  
5.3  
5.3  
6.5  
6.95  
5.4  
3.2  
3.2  
5.4  
3.4  
3.4  
3.4  
9.35  
5.6  
2.0  
1.4  
1.4  
2.0  
1.4  
1.4  
1.4  
2.3  
1.6  
8.0  
4.0  
4.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
12.0  
8.0  
Q1  
Q3  
Q3  
Q1  
Q1  
Q1  
Q1  
Q1  
Q1  
DBV  
DBV  
D
5
8.4  
8.0  
8
12.4  
12.4  
12.4  
12.4  
16.4  
12.4  
12.0  
12.0  
12.0  
12.0  
16.0  
12.0  
VSSOP  
VSSOP  
VSSOP  
SOIC  
DGK  
DGK  
DGK  
D
8
8
8
3500  
2500  
2500  
14  
14  
TSSOP  
PW  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
9-Apr-2022  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LMP7707MAX/NOPB  
LMP7707MF/NOPB  
LMP7707MFX/NOPB  
LMP7708MAX/NOPB  
LMP7708MM/NOPB  
LMP7708MME/NOPB  
LMP7708MMX/NOPB  
LMP7709MAX/NOPB  
LMP7709MTX/NOPB  
SOIC  
SOT-23  
SOT-23  
SOIC  
D
8
5
2500  
1000  
3000  
2500  
1000  
250  
356.0  
208.0  
208.0  
356.0  
208.0  
208.0  
356.0  
356.0  
356.0  
356.0  
191.0  
191.0  
356.0  
191.0  
191.0  
356.0  
356.0  
356.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
DBV  
DBV  
D
5
8
VSSOP  
VSSOP  
VSSOP  
SOIC  
DGK  
DGK  
DGK  
D
8
8
8
3500  
2500  
2500  
14  
14  
TSSOP  
PW  
Pack Materials-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
9-Apr-2022  
TUBE  
*All dimensions are nominal  
Device  
Package Name Package Type  
Pins  
SPQ  
L (mm)  
W (mm)  
T (µm)  
B (mm)  
LMP7707MA/NOPB  
LMP7708MA/NOPB  
LMP7709MA/NOPB  
LMP7709MT/NOPB  
D
D
SOIC  
SOIC  
8
8
95  
95  
55  
94  
495  
495  
495  
495  
8
8
8
8
4064  
4064  
3.05  
3.05  
3.05  
4.06  
D
SOIC  
14  
14  
4064  
PW  
TSSOP  
2514.6  
Pack Materials-Page 3  
PACKAGE OUTLINE  
DBV0005A  
SOT-23 - 1.45 mm max height  
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR  
C
3.0  
2.6  
0.1 C  
1.75  
1.45  
1.45  
0.90  
B
A
PIN 1  
INDEX AREA  
1
2
5
(0.1)  
2X 0.95  
1.9  
3.05  
2.75  
1.9  
(0.15)  
4
3
0.5  
5X  
0.3  
0.15  
0.00  
(1.1)  
TYP  
0.2  
C A B  
NOTE 5  
0.25  
GAGE PLANE  
0.22  
0.08  
TYP  
8
0
TYP  
0.6  
0.3  
TYP  
SEATING PLANE  
4214839/G 03/2023  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. Refernce JEDEC MO-178.  
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed 0.25 mm per side.  
5. Support pin may differ or may not be present.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DBV0005A  
SOT-23 - 1.45 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
5X (1.1)  
1
5
5X (0.6)  
SYMM  
(1.9)  
2
3
2X (0.95)  
4
(R0.05) TYP  
(2.6)  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:15X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
EXPOSED METAL  
EXPOSED METAL  
0.07 MIN  
ARROUND  
0.07 MAX  
ARROUND  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4214839/G 03/2023  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DBV0005A  
SOT-23 - 1.45 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
5X (1.1)  
1
5
5X (0.6)  
SYMM  
(1.9)  
2
3
2X(0.95)  
4
(R0.05) TYP  
(2.6)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
SCALE:15X  
4214839/G 03/2023  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
PACKAGE OUTLINE  
D0008A  
SOIC - 1.75 mm max height  
SCALE 2.800  
SMALL OUTLINE INTEGRATED CIRCUIT  
C
SEATING PLANE  
.228-.244 TYP  
[5.80-6.19]  
.004 [0.1] C  
A
PIN 1 ID AREA  
6X .050  
[1.27]  
8
1
2X  
.189-.197  
[4.81-5.00]  
NOTE 3  
.150  
[3.81]  
4X (0 -15 )  
4
5
8X .012-.020  
[0.31-0.51]  
B
.150-.157  
[3.81-3.98]  
NOTE 4  
.069 MAX  
[1.75]  
.010 [0.25]  
C A B  
.005-.010 TYP  
[0.13-0.25]  
4X (0 -15 )  
SEE DETAIL A  
.010  
[0.25]  
.004-.010  
[0.11-0.25]  
0 - 8  
.016-.050  
[0.41-1.27]  
DETAIL A  
TYPICAL  
(.041)  
[1.04]  
4214825/C 02/2019  
NOTES:  
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.  
Dimensioning and tolerancing per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed .006 [0.15] per side.  
4. This dimension does not include interlead flash.  
5. Reference JEDEC registration MS-012, variation AA.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
D0008A  
SOIC - 1.75 mm max height  
SMALL OUTLINE INTEGRATED CIRCUIT  
8X (.061 )  
[1.55]  
SYMM  
SEE  
DETAILS  
1
8
8X (.024)  
[0.6]  
SYMM  
(R.002 ) TYP  
[0.05]  
5
4
6X (.050 )  
[1.27]  
(.213)  
[5.4]  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:8X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
EXPOSED  
METAL  
EXPOSED  
METAL  
.0028 MAX  
[0.07]  
.0028 MIN  
[0.07]  
ALL AROUND  
ALL AROUND  
SOLDER MASK  
DEFINED  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
4214825/C 02/2019  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
D0008A  
SOIC - 1.75 mm max height  
SMALL OUTLINE INTEGRATED CIRCUIT  
8X (.061 )  
[1.55]  
SYMM  
1
8
8X (.024)  
[0.6]  
SYMM  
(R.002 ) TYP  
[0.05]  
5
4
6X (.050 )  
[1.27]  
(.213)  
[5.4]  
SOLDER PASTE EXAMPLE  
BASED ON .005 INCH [0.125 MM] THICK STENCIL  
SCALE:8X  
4214825/C 02/2019  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
IMPORTANT NOTICE AND DISCLAIMER  
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE  
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”  
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY  
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD  
PARTY INTELLECTUAL PROPERTY RIGHTS.  
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate  
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable  
standards, and any other safety, security, regulatory or other requirements.  
These resources are subject to change without notice. TI grants you permission to use these resources only for development of an  
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