LP5524TMX-5/NOPB [TI]

具有双路 PWM 亮度控制功能的 4 通道 LED 驱动器 | YFQ | 9 | -40 to 85;
LP5524TMX-5/NOPB
型号: LP5524TMX-5/NOPB
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

具有双路 PWM 亮度控制功能的 4 通道 LED 驱动器 | YFQ | 9 | -40 to 85

驱动 驱动器
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LP5524  
SNVS500C JULY 2007REVISED NOVEMBER 2016  
LP5524 Four-Channel LED Driver With Dual-PWM Brightness Control  
1 Features  
3 Description  
The LP5524 device is a highly integrated dual-zone  
LED driver that can drive up to four LEDs in parallel  
with a total output current of 100 mA. Regulated high-  
side internal current sources deliver excellent current  
and brightness matching in all LEDs.  
1
Wide Input Voltage Range: 2.7 V to 5.5 V  
High-Side LED Driver  
Drives Four LEDs With up to 25 mA per LED  
0.4% Typical Current Matching  
PWM Brightness Control  
The LP5524 provides overcurrent protection and  
pulse-width modulation (PWM) control of four  
indicator LEDs without the need for external  
components.  
Overcurrent Protection  
Fast Transient Response  
Optional External ISET Resistor  
Ultra-Small Solution Size:  
LED driver current sources are split into two  
independently controlled banks for driving secondary  
displays, keypad and indicator LEDs. Brightness  
control is achieved by applying PWM signals to each  
enable pin. Default LED current is factory-  
programmable and an optional external resistor can  
be used to set LED current to user programmable  
values.  
No External Components  
9-Pin DSBGA Package with 0.4-mm pitch:  
1.24 mm × 1.24 mm × 0.6 mm (L × W × H,  
maximum)  
2 Applications  
The LP5524 is available in a tiny, 9-pin, thin DSBGA  
package.  
Sub-Display Backlight  
Keypad LED Backlight  
Indicator LED  
Device Information(1)  
PART NUMBER  
LP5524  
PACKAGE  
BODY SIZE (NOM)  
DSBGA (9)  
1.21 mm × 1.21 mm  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
space  
space  
space  
space  
Simplified Schematic  
IDX = 25 mA max  
VIN  
VIN  
D1A  
D2A  
D1B  
D2B  
ENA  
ENB  
ISET  
LP5524  
GND  
RISET  
(optional)  
Copyright © 2016, Texas Instruments Incorporated  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
 
 
LP5524  
SNVS500C JULY 2007REVISED NOVEMBER 2016  
www.ti.com  
Table of Contents  
7.4 Device Functional Modes.......................................... 8  
Application and Implementation .......................... 9  
8.1 Application Information.............................................. 9  
8.2 Typical Application ................................................... 9  
Power Supply Recommendations...................... 11  
1
2
3
4
5
6
Features.................................................................. 1  
Applications ........................................................... 1  
Description ............................................................. 1  
Revision History..................................................... 2  
Pin Configuration and Functions......................... 3  
Specifications......................................................... 4  
6.1 Absolute Maximum Ratings ...................................... 4  
6.2 ESD Ratings.............................................................. 4  
6.3 Recommended Operating Conditions....................... 4  
6.4 Thermal Information.................................................. 4  
6.5 Electrical Characteristics........................................... 5  
6.6 LED Driver Typical Characteristics ........................... 6  
Detailed Description .............................................. 7  
7.1 Overview ................................................................... 7  
7.2 Functional Block Diagram ......................................... 7  
7.3 Feature Description................................................... 7  
8
9
10 Layout................................................................... 12  
10.1 Layout Guidelines ................................................. 12  
10.2 Layout Example .................................................... 12  
11 Device and Documentation Support ................. 13  
11.1 Documentation Support ........................................ 13  
11.2 Receiving Notification of Documentation Updates 13  
11.3 Community Resources.......................................... 13  
11.4 Trademarks........................................................... 13  
11.5 Electrostatic Discharge Caution............................ 13  
11.6 Glossary................................................................ 13  
7
12 Mechanical, Packaging, and Orderable  
Information ........................................................... 13  
4 Revision History  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
Changes from Revision B (June 2016) to Revision C  
Page  
Changed wording of data sheet title ...................................................................................................................................... 1  
Changes from Revision A (May 2013) to Revision B  
Page  
Added Device Information and Pin Configuration and Functions sections, ESD Ratings table, Feature Description,  
Device Functional Modes, Application and Implementation, Power Supply Recommendations, Layout, Device and  
Documentation Support, and Mechanical, Packaging, and Orderable Information sections ................................................. 1  
Deleted lead temperature and soldering rows from Abs Max table - information in POA ..................................................... 4  
Added Thermal Information table with revised RθJA value (from "80 - 125°C/W" to "101.9°C/W") and added  
additional thermal values. ...................................................................................................................................................... 4  
Changes from Original (April 2013) to Revision A  
Page  
Changed layout of National Data Sheet to TI format ........................................................................................................... 10  
2
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SNVS500C JULY 2007REVISED NOVEMBER 2016  
5 Pin Configuration and Functions  
YFQ Package  
9-Pin DSBGA  
Top View  
YFQ Package  
9-Pin DSBGA  
Bottom View  
D1A  
VIN  
D2A  
D2A  
D1A  
VIN  
ENA  
ENB  
3
3
ENA  
ENB  
GND  
GND  
2
1
2
1
D1B  
B
D2B  
C
D2B  
C
D1B  
B
ISET  
A
ISET  
A
Pin Functions  
PIN  
TYPE(1)  
DESCRIPTION  
NUMBER  
A1  
NAME  
ISET  
ENB  
ENA  
D1B  
VIN  
AI  
DI  
Current set input  
Enable for bank B  
Enable for bank A  
A2  
A3  
DI  
B1  
AO  
P
Current source output, bank B LED1  
Power supply pin  
B2  
B3  
D1A  
D2B  
GND  
D2A  
AO  
AO  
G
Current source output, bank A LED1  
Current source output, bank B LED2  
Ground  
C1  
C2  
C3  
AO  
Current source output, bank A LED2  
(1) A: Analog Pin D: Digital Pin G: Ground Pin P: Power Pin I: Input Pin O: Output Pin  
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6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)(2)(3)(4)  
MIN  
–0.3  
–0.3  
MAX  
UNIT  
V
V (VIN, DX, ISET)  
6
6
Voltage on logic pins (ENA, ENB)  
Continuous power dissipation(5)  
Junction temperature, TJ-MAX  
Storage temperature, Tstg  
V
Internally limited  
125  
150  
°C  
°C  
–65  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and  
specifications.  
(3) All voltages are with respect to the potential at the GND pin.  
(4) For detailed soldering specifications and information, refer to AN-1112 DSBGA Wafer Level Chip Scale Package and Absolute  
Maximum Ratings for Soldering.  
(5) Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ=160°C (typical) and  
disengages at TJ=140°C (typical).  
6.2 ESD Ratings  
VALUE  
UNIT  
V(ESD)  
Electrostatic discharge  
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)  
±2000  
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
6.3 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
MAX  
5.5  
UNIT  
Voltage on power pin (VIN)  
Junction temperature, TJ  
2.7  
–40  
–40  
V
125  
85  
°C  
°C  
(1)  
Ambient temperature, TA  
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may  
have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP  
=
125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the  
part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).  
6.4 Thermal Information  
LP5524  
THERMAL METRIC(1)  
YFQ (DSBGA)  
9 PINS  
101.9  
0.9  
UNIT  
RθJA  
RθJC(top)  
RθJB  
ψJT  
Junction-to-ambient thermal resistance(2)  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
22.7  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
0.4  
ψJB  
22.7  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
(2) Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power  
dissipation exists, special care must be paid to thermal dissipation issues in board design.  
4
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6.5 Electrical Characteristics  
Unless otherwise noted, specifications apply to the Functional Block Diagram with: VIN = 3.6 V, RISET = 32.4 k, CIN = 100 nF,  
TJ = 25°C.(1)(2)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
1
UNIT  
Shutdown supply current ENA = ENB = 0 V  
0.2  
µA  
ENA = ENB = 0V, TJ = –40°C to 85°C  
ENA = ENB = H, ISET = open  
IVIN  
Active mode supply  
170  
current  
µA  
ENA = ENB = H, ISET = open  
TJ = –40°C to 85°C  
210  
25  
IDX  
Recommended LED  
current  
3
mA  
IDX = 5 mA, VDX = VIN – 0.2V  
ISET = open  
0.5%  
IDX = 5 mA, VDX = VIN – 0.2V  
ISET = open, TJ = –40°C to 85°C  
5%  
4%  
LED output current  
accuracy  
IOUT  
IDX = 15.9 mA, VDX = VIN – 0.2 V  
0.5%  
0.4%  
IDX = 15.9 mA, VDX = VIN – 0.2 V  
TJ = –40°C to 85°C  
LED current matching(3) IDX = 15.9 mA  
IMATCH  
IDX = 15.9 mA, TJ = –40°C to 85°C  
2.5%  
ΔIDX%/ΔVIN  
ΔIDX%/ΔVDX  
Line regulation  
1
0.4  
10  
%/V  
%/V  
mV  
Load regulation  
VDX < VIN – 0.2V  
Minimum headroom  
IDX set to 5 mA  
voltage  
(VIN – VDX  
VHR  
IDX set to 15 mA  
30  
mV  
(4)  
)
IDX set to 15 mA, TJ = –40°C to 85°C  
75  
External RISET to LED  
current mirroring ratio  
IMIRROR  
1:416  
1.237  
VISET  
IISET  
ISET reference voltage  
V
TJ = –40°C to 85°C  
2.5  
1.2  
62.5  
0.4  
µA  
Recommended  
minimum  
ON time for PWM signal  
tPWM MIN  
33  
μs  
VIL  
VIH  
Logic input low level  
Logic input high level  
TJ = –40°C to 85°C  
V
V
TJ = –40°C to 85°C  
ENA / ENB = 1.2 V  
1.2  
20  
µA  
IIN  
CTRL input current  
Shutdown delay time  
ENA / ENB = 1.2 V, TJ = –40°C to 85°C  
1.9  
25  
Delay from ENA and ENB = low to  
IDX = 0.1 × IDX nom  
tSD  
µs  
(1) All voltages are with respect to the potential at the GND pin.  
(2) Minimum (MIN) and maximum (MAX) limits are specified by design, test, or statistical analysis. Typical (TYP) numbers represent the  
most likely norm.  
(3) Matching is the maximum difference from the average.  
(4) The current source is connected internally between VIN an VDX. The voltage across the current source, (VIN – VDX), is referred to a  
headroom voltage (VHR). Minimum headroom voltage is defined as the VHR voltage when the LED current has dropped 20% from the  
value measured at VDX = VIN – 1 V.  
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6.6 LED Driver Typical Characteristics  
TJ = 25°C. Unless otherwise noted, typical performance characteristics apply to the Functional Block Diagram with VIN = 3.6  
V, RISET = 32.4 k, CIN = 100 nF.  
Figure 1. Output Current vs RISET (Expanded Range)  
Figure 2. Output Current vs RISET  
Figure 3. Output Current vs Input Voltage (ISET Connected  
to VDD)  
Figure 4. Output Current vs Headroom Voltage  
6
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7 Detailed Description  
7.1 Overview  
The LP5524 is an easy-to-use high side current source capable of driving 4 indicator LEDs with up to 25 mA per  
LED. The device operates over the 2.7-V to 5.5-V input voltage range. The output current is user-programmable  
via the optional external ISET resistor.  
7.2 Functional Block Diagram  
7.3 Feature Description  
7.3.1 LED  
Forward voltage of LED must be less than minimum input voltage minus minimum headroom voltage (VHR). For  
example with 2.7-V input voltage and 20-mA LED current the maximum LED forward voltage is 2.7 V – 100 mV =  
2.6 V.  
7.3.2 LED Headroom Voltage  
A single current source is connected internally between VIN and DX outputs (D1A, D2A, D1B and D2B). The  
voltage across the current source, (VIN – VDX), is referred to as headroom voltage (VHR). The current source  
requires a sufficient amount of headroom voltage to be present across it in order to regulate properly.  
Figure 4 shows how output current of the LP5524 varies with respect to headroom voltage. On the flat part of the  
graph, the current is regulated properly as there is sufficient headroom voltage for regulation. On the sloping part  
of the graph the headroom voltage is too small, the current source is squeezed, and the current drive capability is  
limited. Thus, operating the LP5524 with insufficient headroom voltage across the current source must be  
avoided.  
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Feature Description (continued)  
7.3.3 LED Outputs  
If more than 25 mA of output current is required LED outputs can be connected parallel. Connecting LED outputs  
of different group parallel generates a simply two stage brightness control. With IDX set to 25 mA, enabling one  
group sets the LED current to 25 mA. Enabling second bank increases the LED current to 50 mA. Unused LED  
outputs can be left floating or tied to VIN.  
7.3.4 PWM Brightness Control  
The brightness of LEDs can be linearly varied from zero up to the maximum programmed current level by  
applying a pulse–width–modulated signal to the ENx pin of the LP5524. The following procedures illustrate how  
to program the LED drive current and adjust the output current level using a PWM signal.  
1. Determine the maximum desired LED current. Use Equation 1 to calculate RISET  
.
2. Brightness control can be implemented by pulsing a signal at the ENx pin. LED brightness is proportional to  
the duty cycle (D) of the PWM signal.  
For linear brightness control over the full duty cycle adjustment range, the LP5524 uses a special turnoff time  
delay to compensate the turn–on time of the device.  
If the PWM frequency is much less than 100 Hz, flicker may be seen in the LEDs. For the LP5524, zero duty  
cycle turns off the LEDs and a 50% duty cycle results in an average IDX being half of the programmed LED  
current. For example, if RISET is set to program LED current to 15 mA, a 50% duty cycle results in an average IDX  
of 7.5mA.  
7.4 Device Functional Modes  
7.4.1 Enable Mode  
The LP5524 has four constant current LED outputs, which are split into two independently controlled banks.  
Each bank has its own enable input. ENA is used to control bank A and ENB is used to control bank B. Both  
enables are active high and have internal pulldown resistors. When both enables are low part is in low power  
standby mode. Driving either enable high activates the device and corresponding LED outputs.  
7.4.2 ISET Pin  
An external resistor (RISET) connected to ISET pin sets the output current of all the LEDs. The internal current  
mirror sets the LEDs output current with a 416:1 ratio to the current through RISET. Equation 1 approximates the  
LED current:  
IDX = 515 / RISET (Amps)  
(1)  
The use of RISET is optional. If RISET is not used the ISET pin can be left floating or connected to VIN. In these  
cases LED current is set to default current.  
8
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8 Application and Implementation  
NOTE  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
8.1 Application Information  
The LP5524 device provides an easy-to-use solution for driving up to 4 indicator LEDs.  
8.2 Typical Application  
IDX = 15 mA  
VIN  
VIN  
D1A  
D2A  
D1B  
D2B  
ENA  
ENB  
ISET  
LP5524  
GND  
RISET  
(optional)  
Copyright © 2016, Texas Instruments Incorporated  
Figure 5. LP5524 Typical Application  
8.2.1 Design Requirements  
For typical LED-driver applications, use the parameters listed in Table 1.  
Table 1. Design Parameters  
DESIGN PARAMETER  
Minimum input voltage  
ISET resistance  
EXAMPLE VALUE  
2.7 V  
34 kΩ  
Output current  
60 mA  
Maximum LED Vƒ  
2.625 V  
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8.2.2 Detailed Design Procedure  
8.2.2.1 Recommended External Components  
8.2.2.1.1 Input Capacitor, CIN  
Although not required for normal operation, a capacitor can be added to VIN to reduce line noise. TI recommends  
using a surface-mount multi-layer ceramic capacitor (MLCC). MLCCs with a X7R or X5R temperature  
characteristic are preferred.  
Table 2. List Of Recommended External Components  
PARAMETER  
VALUE  
100  
UNIT  
nF  
TYPE  
Ceramic, X7R or X5R  
1%  
CIN  
VDD bypass capacitor  
RISET  
LEDs  
Current set resistor for 15.9-mA LED current  
32.4  
k  
User defined  
8.2.2.1.2 Current Set Resistor, RISET  
If other than 5 mA current is required, RISET resistor can be used to adjust the current. For a 15.9-mA current a  
32.4 kresistor is required. Accuracy of the resistor directly effects to the accuracy of the LED current. TI  
recommends accuracy of 1% or better.  
IDX = 515 / RISET (Amps)  
(2)  
Table 3. Recommended E96 Series (1% Tolerance) Current Set Resistors  
RISET (k)  
169  
IDX (mA)  
3.0  
RISET (k)  
34.0  
IDX (mA)  
15.1  
15.9  
17.1  
17.9  
19.3  
20.2  
21.2  
22.2  
23.3  
24.0  
25.1  
127  
4.1  
32.4  
102  
5.0  
30.1  
84.5  
73.2  
64.9  
56.2  
51.1  
46.4  
42.2  
39.2  
36.5  
6.1  
28.7  
7.0  
26.7  
7.9  
25.5  
9.2  
24.3  
10.1  
11.1  
12.2  
13.1  
14.1  
23.2  
22.1  
21.5  
20.5  
10  
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8.2.3 Application Curves  
Figure 6. PWM Response (Both Channels)  
Figure 7. PWM Response (Single Channel)  
9 Power Supply Recommendations  
The LP5524 is designed to operate from an input supply range of 2.7 V to 5.5 V. This input supply must be well  
regulated and able to provide the peak current required by the LED configuration without voltage drop under load  
transients (enable on/off). The resistance of the input supply rail must be low enough such that the input current  
transient does not cause the LP5524 supply voltage to droop below 2.65 V. Additional bulk decoupling located  
close to the VIN pin may be required to minimize the impact of the input-supply-rail resistance.  
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10 Layout  
10.1 Layout Guidelines  
The LP5524 high-side current source outputs provide a fast load transient (350 nsec typical) to the external load.  
Design the PCB to provide a low resistive/inductive path to the VIN and GND pins. If the optional input capacitor  
(CIN) is used, place it close to the LP5524 VIN and GND pins.  
10.2 Layout Example  
Top Layer  
To LEDs  
Inner Layer  
D1A  
VIN  
D2A  
ENA  
Optional decoupling  
capacitor  
Control  
signals  
GND  
GND  
ENB  
ISET  
D1B D2B  
Vias to VIN  
plane  
MicroVia  
To LEDs  
GND  
Connect to GND plane  
Figure 8. LP5524 Layout Example  
12  
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SNVS500C JULY 2007REVISED NOVEMBER 2016  
11 Device and Documentation Support  
11.1 Documentation Support  
11.1.1 Related Documentation  
For additional information, see the following:  
AN-1112 DSBGA Wafer Level Chip Scale Package  
11.2 Receiving Notification of Documentation Updates  
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper  
right corner, click on Alert me to register and receive a weekly digest of any product information that has  
changed. For change details, review the revision history included in any revised document.  
11.3 Community Resources  
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective  
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of  
Use.  
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration  
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help  
solve problems with fellow engineers.  
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and  
contact information for technical support.  
11.4 Trademarks  
E2E is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
11.5 Electrostatic Discharge Caution  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more  
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.  
11.6 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
12 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
Copyright © 2007–2016, Texas Instruments Incorporated  
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13  
Product Folder Links: LP5524  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
LP5524TM-5/NOPB  
LP5524TMX-5/NOPB  
ACTIVE  
ACTIVE  
DSBGA  
DSBGA  
YFQ  
YFQ  
9
9
250  
RoHS & Green  
SNAGCU  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 85  
-40 to 85  
V2  
V2  
3000 RoHS & Green  
SNAGCU  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
9-Aug-2022  
TAPE AND REEL INFORMATION  
REEL DIMENSIONS  
TAPE DIMENSIONS  
K0  
P1  
W
B0  
Reel  
Diameter  
Cavity  
A0  
A0 Dimension designed to accommodate the component width  
B0 Dimension designed to accommodate the component length  
K0 Dimension designed to accommodate the component thickness  
Overall width of the carrier tape  
W
P1 Pitch between successive cavity centers  
Reel Width (W1)  
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  
Sprocket Holes  
Q1 Q2  
Q3 Q4  
Q1 Q2  
Q3 Q4  
User Direction of Feed  
Pocket Quadrants  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LP5524TM-5/NOPB  
LP5524TMX-5/NOPB  
DSBGA  
DSBGA  
YFQ  
YFQ  
9
9
250  
178.0  
178.0  
8.4  
8.4  
1.35  
1.35  
1.35  
1.35  
0.76  
0.76  
4.0  
4.0  
8.0  
8.0  
Q1  
Q1  
3000  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
9-Aug-2022  
TAPE AND REEL BOX DIMENSIONS  
Width (mm)  
H
W
L
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LP5524TM-5/NOPB  
LP5524TMX-5/NOPB  
DSBGA  
DSBGA  
YFQ  
YFQ  
9
9
250  
208.0  
208.0  
191.0  
191.0  
35.0  
35.0  
3000  
Pack Materials-Page 2  
MECHANICAL DATA  
YFQ0009x
D
0.600±0.075  
E
TMD09XXX (Rev A)  
D: Max = 1.24 mm, Min = 1.18 mm  
E: Max = 1.24 mm, Min = 1.18 mm  
4215077/A  
12/12  
A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994.  
B. This drawing is subject to change without notice.  
NOTES:  
www.ti.com  
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