LP8869C-Q1 [TI]
具有电力线 FET 保护的高集成度 3 通道 120mA 汽车类 LED 驱动器;
| 型号： | LP8869C-Q1 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有电力线 FET 保护的高集成度 3 通道 120mA 汽车类 LED 驱动器 驱动 驱动器 |
| 文件： | 总39页 (文件大小：1112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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LP8867C-Q1, LP8869C-Q1
ZHCSK37 –AUGUST 2019
具有 4 通道、3 通道的 LP8867C-Q1、LP8869C-Q1 低 EMI 汽车 LED 驱
动器
1 特性
2 应用
1
•
符合面向汽车 应用的 AEC-Q100 标准：
•
为以下应用提供背光：
–
器件温度等级 1：
–40°C 至 +125°C，TA
–
–
–
–
汽车信息娱乐系统
汽车仪表组
•
适用于汽车 LCD 显示屏的 3 通道、4 通道 120mA
LED 驱动器
智能后视镜
抬头显示屏 (HUD)
–
–
–
–
在 100Hz 时具有 10000:1 的高调光比
电流匹配度为 1%（典型值）
3 说明
LED 灯串电流高达 120mA/通道
LP8867C-Q1、LP8869C-Q1 是高度集成、低 EMI、
易于使用并具有直流/直流转换器的汽车 LED 驱动器。
直流/直流转换器支持升压和 SEPIC 工作模式。此器件
具有四个或三个高精度灌电流，可以将这些电流组合在
一起以获得更高的电流能力。
可以在外部组合输出，以便为每个灯串提供更高
的电流
•
用于 LED 灯串电源的集成式升压和 SEPIC 转换器
–
–
–
–
–
–
输入电压工作范围：4.5V 至 40V
输出电压高达 45V
直流/直流转换器可基于 LED 正向电压提供自适应输出
电压控制。该特性可在所有条件下将电压调节到能够满
足需要的最低水平，从而更大限度降低功耗。为了降低
EMI，DC-DC 转换器支持针对开关频率进行扩频以及
使用专用引脚实现外部同步。凭借宽范围可调频
率，LP886xC-Q1 可避免敏感频段的干扰。
集成的 3.3A 开关 FET
开关频率为 300kHz 至 2.2MHz
开关同步输入
扩频，以实现更低的 EMI
•
保护和故障检测
–
–
–
–
–
–
故障输出
LP886xC-Q1 的输入电压范围为 4.5V 至 40V，支持汽
车启动/停止以及负载突降的情况。LP886xC-Q1 集成
了丰富的故障检测 特性。
输入电压 OVP、UVLO
升压 OVP
SW OVP
LED 开路和短路故障检测
热关断
器件信息(1)
器件型号
LP8867C-Q1
LP8869C-Q1
封装
封装尺寸（标称值）
简化原理图
HTSSOP (20)
6.50mm x 4.40mm
VIN
4.5...40 V
D1
L1
Up to 45 V
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附
录。
CIN
COUT
系统效率
R2
R1
SW
100
96
92
88
84
80
FB
VIN
CFB
Up to 120 mA/string
LDO
CLDO
OUT1
LP8867C-Q1
OUT2
OUT3
RFSET
FSET
SYNC
PWM
OUT4
ISET
BRIGHTNESS
76
VIN = 16V
VIN = 12V
EN
VDDIO/EN
FAULT
72
VIN = 8V
VIN = 6V
FAULT
68
R8
VDDIO
80
160
240 320
Output Current (mA)
400
480
PGND GND PAD
RISET
D000
1
本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。 有关适用的官方英文版本的最新信息，请访问 www.ti.com，其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SNVSBC7
LP8867C-Q1, LP8869C-Q1
ZHCSK37 –AUGUST 2019
www.ti.com.cn
目录
8.1 Overview ................................................................. 11
8.2 Functional Block Diagram ....................................... 12
8.3 Feature Description................................................. 13
8.4 Device Functional Modes........................................ 22
Application and Implementation ........................ 24
9.1 Application Information............................................ 24
9.2 Typical Applications ................................................ 24
1
2
3
4
5
6
7
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Device Comparison Table..................................... 3
Pin Configuration and Functions......................... 3
Specifications......................................................... 5
7.1 Absolute Maximum Ratings ...................................... 5
7.2 ESD Ratings.............................................................. 5
7.3 Recommended Operating Conditions....................... 5
7.4 Thermal Information.................................................. 6
7.5 Electrical Characteristics........................................... 6
7.6 Internal LDO Electrical Characteristics ..................... 6
7.7 Protection Electrical Characteristics ......................... 6
7.8 Current Sinks Electrical Characteristics.................... 7
7.9 PWM Brightness Control Electrical Characteristics .. 7
7.10 Boost and SEPIC Converter Characteristics .......... 7
7.11 Logic Interface Characteristics................................ 7
7.12 Typical Characteristics............................................ 9
Detailed Description ............................................ 11
9
10 Power Supply Recommendations ..................... 29
11 Layout................................................................... 30
11.1 Layout Guidelines ................................................. 30
11.2 Layout Example .................................................... 31
12 器件和文档支持 ..................................................... 32
12.1 器件支持................................................................ 32
12.2 文档支持................................................................ 32
12.3 接收文档更新通知 ................................................. 32
12.4 社区资源................................................................ 32
12.5 商标....................................................................... 32
12.6 静电放电警告......................................................... 32
12.7 Glossary................................................................ 32
13 机械、封装和可订购信息....................................... 32
8
4 修订历史记录
日期
修订版本
说明
8 月2019 年
*
初始发行版
2
Copyright © 2019, Texas Instruments Incorporated
LP8867C-Q1, LP8869C-Q1
www.ti.com.cn
ZHCSK37 –AUGUST 2019
5 Device Comparison Table
LP8869-Q1
3
LP8869C-Q1
LP8867-Q1
LP8867C-Q1
Number of LED channels
LED current / channel
3
4
4
120 mA
Yes
120 mA
No
120 mA
Yes
120 mA
No
Power Line FET Control and
Automatic Current De-rating Support
6 Pin Configuration and Functions
LP8867C-Q1 PWP Package
20-Pin HTSSOP With Exposed Thermal Pad
Top View
1
2
20
19
18
17
16
VIN
LDO
VIN
NC
3
FSET
SW
PGND
FB
4
VDDIO/EN
FAULT
5
6
15 OUT1
14 OUT2
13 OUT3
12 OUT4
SYNC
PWM
7
8
NC
GND
ISET
9
EP*
10
11
GND
*EXPOSED PAD
LP8869C-Q1 PWP Package
20-Pin HTSSOP With Exposed Thermal Pad
Top View
1
2
20
19
18
17
16
VIN
LDO
VIN
NC
3
FSET
SW
PGND
FB
4
VDDIO/EN
FAULT
5
6
15 OUT1
14 OUT2
13 OUT3
12 GND
SYNC
PWM
7
8
NC
GND
ISET
9
EP*
10
11
GND
*EXPOSED PAD
Copyright © 2019, Texas Instruments Incorporated
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ZHCSK37 –AUGUST 2019
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Pin Functions
PIN
TYPE(1)
DESCRIPTION
NO.
1
NAME
VIN
A
A
Input power pin and pin for input voltage detection for OVP protection
2
LDO
Output of internal LDO; connect a 1-μF decoupling capacitor between this pin and noise-free GND.
Put the capacitor as close to the chip as possible.
DC-DC (boost or SEPIC) switching frequency setting resistor; for normal operation, resistor value
from 24 kΩ to 219 kΩ must be connected between this pin and ground.
3
FSET
A
4
5
VDDIO/EN
FAULT
I
Enable input for the device as well as supply input (VDDIO) for digital pins.
Fault signal output. If unused, the pin may be left floating.
OD
Input for synchronizing DC-DC converter. If synchronization is not used, connect this pin to GND to
disable spread spectrum or to VDDIO/EN to enable spread spectrum.
6
SYNC
I
7
8
9
PWM
NC
I
PWM dimming input.
No connect
—
G
GND
Ground
LED current setting resistor; for normal operation, resistor value from 20 kΩ to 129 kΩ must be
connected between this pin and ground.
10
11
ISET
GND
A
G
Ground.
Current sink output for LP8867C-Q1
This pin must be connected to GND if not used.
12
OUT4/GND
A
GND pin for LP8869C-Q1
Current sink output.
This pin must be connected to GND if not used.
13
14
15
OUT3
OUT2
OUT1
A
A
A
Current sink output.
This pin must be connected to GND if not used.
Current sink output.
This pin must be connected to GND if not used.
DC-DC (boost or SEPIC) feedback input; for normal operation this pin must be connected to the
16
FB
A
middle of a resistor divider between VOUT and ground using feedback resistor values greater than
5kΩ.
17
18
19
20
PGND
SW
G
A
DC-DC (boost or SEPIC) power ground.
DC-DC (boost or SEPIC) switch pin.
No connect
NC
—
A
VIN
Input power pin and pin for input voltage detection for OVP protection
(1) A: Analog pin, G: Ground pin, P: Power pin, I: Input pin, I/O: Input/Output pin, O: Output pin, OD: Open Drain pin
4
Copyright © 2019, Texas Instruments Incorporated
LP8867C-Q1, LP8869C-Q1
www.ti.com.cn
ZHCSK37 –AUGUST 2019
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN
MAX
50
UNIT
VIN, SD, SW, FB
–0.3
Voltage on pins
OUT1, OUT2, OUT3, OUT4
–0.3
45
V
LDO, SYNC, FSET, ISET, PWM, VDDIO/EN, FAULT
–0.3
5.5
Continuous power dissipation(3)
Internally Limited
(4)
Ambient temperature, TA
–40
–40
–65
125
150
150
°C
°C
°C
(4)
Junction temperature, TJ
Storage temperature, Tstg
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to the potential at the GND pins.
(3) Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 165°C (typical) and
disengages at TJ = 145°C (typical).
(4) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP
=
150°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the
part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).
7.2 ESD Ratings
VALUE
±2000
±750
UNIT
(1)
Human-body model (HBM), per AEC Q100-002, all pins
V(ESD)
Electrostatic discharge
Corner pins (1, 10, 11 and 20)
All pins
V
Charged-device model (CDM), per AEC
Q100-011
±500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted)(1)
MIN
4.5
0
NOM
MAX
45
UNIT
VIN
12
SW
45
Voltage on
pins
OUT1, OUT2, OUT3, OUT4
FB, FSET, LDO, ISET, VDDIO/EN, FAULT
SYNC, PWM
0
40
V
0
5.25
0
VDDIO/EN
(1) All voltages are with respect to the potential at the GND pins.
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7.4 Thermal Information
LP886x-Q1
THERMAL METRIC(1)
PWP (HTSSOP)
UNIT
20 PINS
44.2
26.5
22.4
0.9
RθJA
Junction-to-ambient thermal resistance(2)
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJCtop
RθJB
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
ψJB
22.2
2.5
RθJCbot
(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
(2) Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power
dissipation exists, special care must be paid to thermal dissipation issues in board design.
7.5 Electrical Characteristics
Limits apply over the full operation temperature range −40°C ≤ TA ≤ +125°C , unless otherwise speicified, VIN = 12V.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Standby supply current
Device disabled, VVDDIO/EN = 0 V, VIN = 12 V
4.5
20
μA
IQ
VIN = 12 V, VOUT = 26 V, output current 80
mA/channel, converter ƒSW = 300 kHz
Active supply current
5
12
mA
7.6 Internal LDO Electrical Characteristics
Limits apply over the full operation temperature range −40°C ≤ TA ≤ +125°C , unless otherwise speicified, VIN = 12V.
PARAMETER
TEST CONDITIONS
MIN
4.15
120
TYP
MAX
4.55
430
UNIT
V
VLDO
VDR
Output voltage
VIN = 12 V
4.3
Dropout voltage
300
50
mV
mA
mA
ISHORT
IEXT
Short circuit current
Current for external load
5
7.7 Protection Electrical Characteristics
Limits apply over the full operation temperature range −40°C ≤ TA ≤ +125°C , unless otherwise speicified, VIN = 12V.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
VOVP
VIN OVP threshold voltage
VIN UVLO Falling threshold
41
42
44
VUVLO
3.7
3.85
4
V
VIN UVLO Rising threshold - VIN UVLO
Fallling threshold
VUVLO_HYST
150
mV
VFB_OVP
TTSD
FB threshold for BST_OVP fault
2.3
V
Thermal shutdown Rising threshold
150
165
175
℃
Thermal shutdown Rising threshold -
Thermal shutdown Falling threshold
TTSD_HYS
20
℃
6
Copyright © 2019, Texas Instruments Incorporated
LP8867C-Q1, LP8869C-Q1
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ZHCSK37 –AUGUST 2019
7.8 Current Sinks Electrical Characteristics
Limits apply over the full operation temperature range −40°C ≤ TA ≤ +125°C , unless otherwise speicified, VIN = 12V.
PARAMETER
TEST CONDITIONS
Outputs OUT1 to OUT4 , VOUTx = 45 V, EN = L
OUT1, OUT2, OUT3, OUT4, RISET = 20 kΩ
IOUT = 100 mA
MIN
TYP
MAX
UNIT
µA
ILEAKAGE
IMAX
Leakage current
0.1
5
Maximum current
120
mA
IOUT
Output current accuracy
Output current matching(1)
Low comparator threshold
Mid comparator threshold
High comparator threshold
−5%
5%
5%
IMATCH
IOUT = 100 mA, PWM duty =100%
1%
0.9
1.9
6
VLOW_COMP
VMID_COMP
VHIGH_COMP
V
V
V
5.6
7
(1) Output Current Accuracy is the difference between the actual value of the output current and programmed value of this current.
Matching is the maximum difference from the average. For the constant current sinks on the part (OUTx), the following are determined:
the maximum output current (MAX), the minimum output current (MIN), and the average output current of all outputs (AVG). Matching
number is calculated: (MAX-MIN)/AVG. The typical specification provided is the most likely norm of the matching figure for all parts. LED
current sinks were characterized with 1-V headroom voltage. Note that some manufacturers have different definitions in use.
7.9 PWM Brightness Control Electrical Characteristics
Limits apply over the full operation temperature range −40°C ≤ TA ≤ +125°C , unless otherwise speicified, VIN = 12V.
PARAMETER
PWM input frequency
Minimum on/off time(1)
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Hz
ƒPWM
100
20 000
tON/OFF
0.5
µs
(1) This specification is not ensured by ATE.
7.10 Boost and SEPIC Converter Characteristics
Limits apply over the full operation temperature range −40°C ≤ TA ≤ +125°C , unless otherwise speicified, VIN = 12V.
PARAMETER
TEST CONDITIONS
MIN
4.5
6
TYP
MAX
UNIT
VIN
Input voltage
40
V
VOUT
Output voltage
45
ƒSW_MIN
ƒSW_MAX
tOFF
Minimum switching frequency
Maximum switching frequency
Minimum switch OFF time(1)
SW current limit first triggerred
SW current limit first triggerred period
SW current limit
Defined by RFSET resistor
Defined by RFSET resistor
SW ≥ 1.15 MHz
300
kHz
kHz
ns
2 200
ƒ
55
ISW_MAX
tSW_MAX
ISW_LIM
RDSON
fSYNC
3.3
3
3.7
1.6
4.1
A
s
3.35
240
3.7
400
A
FET RDSON
mΩ
kHz
ns
External SYNC frequency
External SYNC on time(1)
External SYNC off time(1)
300
150
150
2 200
tSYNC_ON
tSYNC_OFF
ns
(1) This specification is not ensured by ATE.
7.11 Logic Interface Characteristics
Limits apply over the full operation temperature range −40°C ≤ TA ≤ +125°C , unless otherwise speicified, VIN = 12V.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
LOGIC INPUT VDDIO/EN
VIL
VIH
Input low level
Input high level
Input DC current
0.4
V
1.65
−1
5
30
µA
IEN
Input transient current during VDDIO/EN
powering up
1.2
mA
LOGIC INPUT SYNC, PWM
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Logic Interface Characteristics (continued)
Limits apply over the full operation temperature range −40°C ≤ TA ≤ +125°C , unless otherwise speicified, VIN = 12V.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
0.2 ×
VDDIO/E
N
VIL
Input low level
0.8 ×
VDDIO/E
N
VIH
II
Input high level
Input current
−1
1
μA
LOGIC OUTPUT FAULT
VOL
Output low level
Output leakage current
Pullup current 3 mA
V = 5.5 V
0.3
0.5
1
V
ILEAKAGE
μA
8
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LP8867C-Q1, LP8869C-Q1
www.ti.com.cn
ZHCSK37 –AUGUST 2019
7.12 Typical Characteristics
Unless otherwise specified: D = NRVB460MFS, TA = 25°C
480
400
320
240
480
400
320
240
160
80
160
VBoost = 18V
VBoost = 26V
VBoost = 37V
VBoost = 18V
VBoost = 26V
VBoost = 37V
80
4.5
5.5
6.5
Input Voltage (V)
7.5
8.5
9
4.5
5.5
6.5 7.5
Input Voltage (V)
8.5
9.5 10
D005
D006
ƒSW = 400 kHz
L = 33 μH
DC Load (PWM = 100%)
ƒSW = 1.1 MHz
L = 15 μH
DC Load (PWM = 100%)
CIN and COUT = 33 µF + 2 × 10 µF (ceramic)
CIN and COUT = 33 µF + 10 µF (ceramic)
图 1. Maximum Boost Current
图 2. Maximum Boost Current
480
6
5
4
3
2
1
0
400
320
240
160
VBoost = 18V
VBoost = 26V
VBoost = 37V
80
4.5
5.5
6.5 7.5
Input Voltage (V)
8.5
9.5
D007
40
50
60
70
80
90
100
ƒSW = 2.2 MHz
L = 10 μH
DC Load (PWM = 100%)
Output current (mA)
C013
CIN and COUT = 3× 10 µF (ceramic)
图 4. LED Current Sink Matching
图 3. Maximum Boost Current
100
100
96
92
88
84
80
76
72
68
96
92
88
84
80
76
72
68
VIN = 16V
VIN = 12V
VIN = 8V
VIN = 6V
VIN = 16V
VIN = 12V
VIN = 8V
VIN = 6V
80
160
240 320
Output Current (mA)
400
480
80
160
240 320
Output Current (mA)
400
480
D001
D002
ƒSW = 400 kHz
L = 22 μH
DC Load (PWM = 100%)
VBOOST = 18 V
ƒSW = 400 kHz
L = 22 μH
DC Load (PWM = 100%)
VBOOST = 30 V
CIN and COUT = 33 µF + 2 × 10 µF
(ceramic)
CIN and COUT = 33 µF + 2 × 10 µF
(ceramic)
图 5. Boost Efficiency
图 6. Boost Efficiency
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Typical Characteristics (接下页)
Unless otherwise specified: D = NRVB460MFS, TA = 25°C
100
100
96
92
88
84
80
76
72
68
96
92
88
84
80
76
VIN = 16V
VIN = 12V
VIN = 16V
VIN = 12V
VIN = 8V
VIN = 6V
72
VIN = 8V
VIN = 6V
68
80
160
240 320
Output Current (mA)
400
480
80
160
240 320
Output Current (mA)
400
480
D003
D004
ƒSW = 2.2 MHz
L = 4.7 μH
DC Load (PWM = 100%)
VBOOST = 18 V
ƒSW = 2.2 MHz
L = 4.7 μH
DC Load (PWM = 100%)
VBOOST = 30 V
CIN and COUT = 3 × 10 µF (ceramic)
CIN and COUT = 3 × 10 µF (ceramic)
图 7. Boost Efficiency
图 8. Boost Efficiency
10
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ZHCSK37 –AUGUST 2019
8 Detailed Description
8.1 Overview
The LP8867C-Q1, LP8869C-Q1 is a highly integrated LED driver for automotive infotainment , cluster and HUD
medium-size LCD backlight applications. It includes a DC-DC with an integrated FET, supporting both boost and
SEPIC modes, an internal LDO enabling direct connection to battery without need for a pre-regulated supply and
3 or 4 LED current sinks. The VDDIO/EN pin provides the supply voltage for digital IOs (PWM and SYNC inputs)
and at the same time enables the device.
The switching frequency on the DC-DC converter is set by a resistor connected to the FSET pin. The maximum
voltage of the DC-DC is set by a resistive divider connected to the FB pin. For the best efficiency, the output
voltage is adapted automatically to the minimum necessary level needed to drive the LED strings. This is done
by monitoring LEDs' cathode voltage in real time. For EMI reduction, two optional features are available:
•
•
Spread spectrum, which reduces EMI noise around the switching frequency and its harmonic frequencies
DC-DC can be synchronized to an external frequency connected to SYNC pin
The 3 or 4 constant current outputs OUT1, OUT2, OUT3, and OUT4 provide LED current up to 120 mA. Value
for the current per OUT pin is set with a resistor connected to ISET pin. Current sinks that are not used must be
connected to ground. Grounded current sink is disabled and excluded from boost adaptive voltage detection
loop.
Brightness is controlled with the PWM input. Frequency range for the input PWM is from 100 Hz to 20 kHz. LED
output PWM behavior follows the input PWM so the output frequency is equal to the input frequency.
LP886xC-Q1 has extensive fault detection features:
•
•
•
•
•
•
LED open and short detection
VIN input overvoltage protection
VIN input undervoltage protection
VBoost output overvoltage protection
SW overvoltage protection
Thermal shutdown in case of chip overheated
Fault condition is indicated through the FAULT output pin.
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8.2 Functional Block Diagram
L
D
VIN
COUT
CIN
VIN
LDO
LDO
CLDO
SW
SYNC
PGND
FB
BOOST
CONTROLLER
RFSET
FSET
ISET
RISET
4 x LED
CURRENT
SINK
OUT1
OUT2
OUT3
OUT4
GND
CURRENT
SETTING
PWM
VDDIO/EN
FAULT
DIGITAL BLOCKS
(FSM, ADAPTIVE VOLTAGE
CONTROL, SAFETY LOGIC
etc.)
ANALOG BLOCKS
(CLOCK GENERATOR, VREF,
TSD etc.)
VDDIO
EXPOSED PAD
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8.3 Feature Description
8.3.1 Integrated DC-DC Converter
The LP886xC-Q1 DC-DC converter generates supply voltage for the LEDs and can operate in boost mode or in
SEPIC mode. The output voltage, switching frequency are all configured by external resistors.
8.3.1.1 DC-DC Converter Parameter Configuration
The LP886xC-Q1 converter is a current-peak mode DC-DC converter, where the switch FET's current and the
output voltage feedback are measured and controlled. The block diagram shown in 图 9
D
VIN
VOUT
CIN
COUT
R1
SW
OCP
ADAPTIVE
VOLTAGE
CONTROL
R2
LIGHT
LOAD
CURRENT
SENSE
OVP
RC
R
S
R
R
filter
FB
-
GM
PGND
R
+
SYNC
FSET
GM
ꢀ
FSET
BLANK
TIME
CTRL
BOOST
OFF/BLANK
TIME
CURRENT
RAMP
OSCILLATOR
PULSE
GENERATOR
RFSET
GENERATOR
图 9. Boost Block Diagram
8.3.1.1.1 Switching Frequency
Switching frequency is adjustable between 300 kHz and 2.2 MHz with RFSET resistor as 公式 1:
ƒSW = 67600 / (RFSET + 6.4)
where
•
•
ƒSW is switching frequency, kHz
RFSET is frequency setting resistor, kΩ
(1)
For example, if RFSET is set to 163 kΩ, fSW will be 400 kHz.
In most cases, lower switching frequency has higher system efficiency and lower internal temperature increase.
8.3.1.1.2 Spread Spectrum and External SYNC
LP886xC-Q1 has an optional spread spectrum feature (±3% from central frequency, 1-kHz modulation
frequency) which reduces EMI noise at the switching frequency and its harmonic frequencies. If SYNC pin level
is low, spread spectrum function is disabled. If SYNC pin level is high, spread spectrum function is enabled.
LP886xC-Q1 DC-DC converter can be driven by an external SYNC signal between 300 kHz and 2.2 MHz. When
external synchronization is used, spread spectrum is not available. If the external synchronization input
disappears, DC-DC continues operation at the frequency defined by RFSET resistor and spread spectrum function
will be enabled/disabled depending on the final SYNC pin level.
External SYNC frequency must be 1.2 to 1.5 times higher than the frequency defined by RFSET resistor. In
external SYNC configuration, minimum frequency setting with RFSET could go as low as 250 kHz to support 300-
kHz switching with external clock.
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Feature Description (接下页)
表 1. DC-DC Synchronization Mode
SYNC PIN INPUT
MODE
Low
High
Spread spectrum disabled
Spread spectrum enabled
300 to 2200 kHz frequency
Spread spectrum disabled, external synchronization mode
8.3.1.1.3 Recommended Component Value and Internal Parameters
The LP886xC-Q1 DC-DC converter has an internal compensation network to ensure the stability. There's no
external component needed for compensation. It's strongly recommended that the inductance value and the
boost input and output capacitors value follow the requirement of 表 2. Also, the DC-DC internal parameters are
chosen automatically according to the selected switching frequency (see 表 2) to ensure stability.
表 2. Boost Converter Parameters(1)
TYPICAL
INDUCTANCE (µH)
TYPICAL BOOST INPUT
AND OUTPUT CAPACITORS (µF)
MINIMUM SWITCH
OFF TIME (ns)(2)
BLANK
TIME (ns)
RANGE
FREQUENCY (kHz)
1
2
3
4
300 to 480
480 to 1150
1150 to 1650
1650 to 2200
22 or 33
15
2 ×10 (cer.) + 33 (electr.)
10 (cer.) + 33 (electr.)
3 × 10 (cer.)
150
60
95
95
95
70
10
40
4.7 or 10
3 × 10 (cer.)
40
(1) Parameters are for reference only
(2) Due to current sensing comparator delay the actual minimum off time is 6 ns (typical) longer than in the table.
8.3.1.1.4 DC-DC Converter Switching Current Limit
The LP886xC-Q1 DC-DC converter has an internal SW FET inside chip's SW pin. The internal FET current is
limited to 3.35 A (typical). The DC-DC converter will sense the internal FET current, and turn off the internal FET
cycle-by-cycle when the internal FET current reaches the limit.
To support start transient condition, the current limit could be automatically increased to 3.7 A for a short period
of 1.6 seconds when a 3.35-A limit is reached.
注
Application condition where the 3.35-A limit is exceeded continuously is not allowed. In
this case the current limit would be 3.35 A for 1.6 seconds followed by 3.7-A limit for 1.6
seconds, and this 3.2-second period repeats.
8.3.1.1.5 DC-DC Converter Light Load Mode
LP886xC-Q1 DC-DC converter will enter into light load mode in below condition:
•
•
•
VIN voltage is very close to VOUT
Loading current is very low
PWM pulse width is very short
When DC-DC converter enters into light load mode, DC-DC converter stops switching occasionally to make sure
boost output voltage won't rise up too much. It could also be called as PFM mode, since the DC-DC converter
switching frequency will change in this mode.
8.3.1.2 Adaptive Voltage Control
The LP886xC-Q1 DC/DC converter generates the supply voltage for the LEDs. During normal operation, boost
output voltage is adjusted automatically based on the LED cathode (OUTx pin) voltages. This is called adaptive
boost control. Only the active LED outputs are monitored to control the adaptive boost voltage. Any LED strings
with open or short faults are removed from the adaptive voltage control loop. The OUTx pin voltages are
periodically monitored by the control loop. The boost voltage is raised if any of the OUTx voltage falls below the
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VLOW_COMP threshold. The boost voltage is also lowered if all OUTx voltages are higher than VLOW_COMP
threshold. The boost voltage keeps unchanged when one of OUTx voltage touches the VLOW_COMP threshold. In
normal operation, the lowest voltage among the OUTx pins is around VLOW_COMP, and boost voltage stays
constant. VLOW_COMP level is the minimum voltage which could guarantee proper LED current sink operation. See
图 10 for how the boost voltage automatically scales based on the OUT1-4 pin voltage.
Boost
decreases voltage
Boost
Increases voltage
No actions
OUT 1-4
VOLTAGE
The lowest channel
voltage touches
VLOW_COMP threshold
No output is close to
VLOW_COMP threshold
One output is lower than
VLOW_COMP threshold
VLOW_COMP
Normal
Conditions
Dynamic
Conditions
图 10. Adaptive Boost Voltage Control Loop Function
8.3.1.2.1 Using Two-Divider
VBOOST_MAX voltage should be chosen based on the maximum voltage required for LED strings. Recommended
maximum voltage is about 3 to 5-V higher than maximum LED string voltage. DC-DC output voltage is adjusted
automatically based on LED cathode voltage. The maximum, minimum and initial boost voltages can be
calculated with 公式 2:
V
≈
’
BG
VBOOST
=
+K ì 0.0387 ì R1+ VBG
∆
«
÷
R2
◊
where
•
•
•
•
•
•
•
VBG = 1.2 V
R2 recommended value is 10 kΩ to 200 kΩ
R1/R2 recommended value is 5 to 10 for <1150kHz DC-DC switching frequency
R1/R2 recommended value is 10 to 20 for >1150kHz DC-DC switching frequency
K = 1 for maximum adaptive boost voltage (typical)
K = 0 for minimum adaptive boost voltage (typical)
K = 0.88 for initial boost voltage (typical)
(2)
For example, if R1 is set to 750 kΩ and R2 is set to 130 kΩ, VBOOST will be in the range of 8.1 V to 37.1 V.
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VOUT
COUT
R1
+
VBG
GM
œ
FB
R2
+
BSTOVP
VOVP
œ
Current DAC
(38.7uA Full-Scale)
图 11. FB External Two-Divider Resistors
8.3.1.2.2 Using T-Divider
Alternatively, a T-divider can be used if resistance less than 100 kΩ is required for the external resistive divider.
Then the maximum, minimum and initial boost voltages can be calculated with
R1ìR3
R2
R1
R2
≈
’
◊
≈
’
◊
VBOOST
=
+R1+R3 Kì0.0387 +
+1 ìVBG
∆
«
÷
∆
«
÷
where
•
•
•
•
•
•
•
VBG = 1.2 V
R2 recommended value is 10 kΩ to 200 kΩ
R1/R2 recommended value is 5 to 10 for <1150kHz DC-DC switching frequency
R1/R2 recommended value is 10 to 20 for >1150kHz DC-DC switching frequency
K = 1 for maximum adaptive boost voltage (typical)
K = 0 for minimum adaptive boost voltage (typical)
K = 0.88 for initial boost voltage (typical)
(3)
For example, if R1 is set to 100 kΩ, R2 is set to 10 kΩ and R3 is set to 60 kΩ, VBOOST will be in the range of 13.2
V to 42.6 V.
16
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VOUT
COUT
R1
R2
+
GM
VBG
R3
œ
FB
+
BSTOVP
VOVP
œ
Current DAC
(38.7uA Full-Scale)
图 12. FB external T-divider resistors
8.3.1.2.3 Feedback Capacitor
When operating with no electrolytic capacitor in boost output, which is a typical case when boost frequency is in
the 1.15-MHz to 2.2-MHz range, a feedback capacitor needs to be put in parallel with R1 to ensure the loop
stability. The value of the capacitor is recommended to be:
1
CFB
=
2pfzR1
where
•
fz = 20 kHz
(4)
For example, if R1 is set to 750 kΩ, CFB needs to be around 11 pF.
VOUT
COUT
R1
R2
Optional
R3
CFB
+
GM
VBG
œ
FB
+
BSTOVP
VOVP
œ
Current DAC
(38.7uA Full-Scale)
图 13. FB External Resistors With Capacitor When Operating With No Electrolytic Capacitor In Boost
Output
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8.3.2 Internal LDO
The internal LDO regulator converts the input voltage at VIN to a 4.3-V output voltage for internal use. Connect a
minimum of 1-µF ceramic capacitor from LDO pin to ground, as close to the LDO pin as possible.
8.3.3 LED Current Sinks
8.3.3.1 LED Output Configuration
LP886xC-Q1 detects LED output configuration during start-up. Any current sink output connected to ground is
disabled and excluded from the adaptive voltage control of the DC-DC converter and fault detections.
If more current is needed, LP886xC-Q1's output could also be connected together to support the high current
LED.
8.3.3.2 LED Current Setting
The output current of the LED outputs is controlled with external RISET resistor. RISET value for the target LED
current per channel can be calculated using 公式 5:
VBG
ILED = 2000ì
RISET
where
•
•
•
VBG = 1.2 V
RISET is current setting resistor, kΩ
ILED is output current per OUTx pin, mA
(5)
For example, if RISET is set to 20 kΩ, ILED will be 120 mA per channel.
8.3.3.3 Brightness Control
LP886xC-Q1 controls the brightness of the display with conventional PWM. Output PWM directly follows the
input PWM. Input PWM frequency can be in the range of 100 Hz to 20 kHz.
8.3.4 Protection and Fault Detections
The LP886xC-Q1 has fault detection for LED open and short, VIN input overvoltage protection (VIN_OVP) , VIN
undervoltage protection (VIN_UVLO), Boost output overvoltage protection (BST_OVP), SW overvoltage
protection (SW_OVP) and thermal shutdown (TSD).
8.3.4.1 Supply Fault and Protection
8.3.4.1.1 VIN Undervoltage Fault (VIN_UVLO)
The LP886xC-Q1 device supports VIN undervoltage protection. The VIN undervoltage falling threshold is 3.85-V
typical and rising threshold is 4-V typical. If during operation of the LP886xC-Q1 device, the VIN pin voltage falls
below the VIN undervoltage falling threshold, the boost, LED outputs, and power-line FET will be turned off, and
the device will enter FAULT RECOVERY mode. The FAULT pin will be pulled low. The LP886xC-Q1 will exit
FAULT RECOVERY mode after 100 ms and try the start-up sequence again. VIN_UVLO fault detection is
available in SOFT START, BOOST START, and NORMAL state.
8.3.4.1.2 VIN Overvoltage Fault (VIN_OVP)
The LP886xC-Q1 device supports VIN overvoltage protection. The VIN overvoltage threshold is 42-V typical. If
during LP886xC-Q1 operation, VIN pin voltage rises above the VIN overvoltage threshold, the boost, LED
outputs and the power-line FET will be turned off, and the device will enter FAULT RECOVERY mode. The
FAULT pin will be pulled low. The LP886xC-Q1 will exit FAULT RECOVERY mode after 100 ms and try the start-
up sequence again. VIN_OVP fault detection is available in SOFT START, BOOST START and NORMAL state.
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8.3.4.2 Boost Fault and Protection
8.3.4.2.1 Boost Overvoltage Fault (BST_OVP)
The LP886xC-Q1 device supports boost overvoltage protection. If during LP886xC-Q1 operation, the FB pin
voltage exceeds the VFB_OVP threshold, which is 2.3-V typical, the boost, LED outputs and the power-line FET will
be turned off, and the device will enter FAULT RECOVERY mode. The FAULT pin will be pulled low. The
LP886xC-Q1 will exit FAULT RECOVERY mode after 100 ms and try the start-up sequence again. BST_OVP
fault detection is available in NORMAL state.
Calculating back from FB pin voltage threshold to boost output OVP voltage threshold, the value is not a static
threshold, but a dynamic threshold changing with the current target boost adaptive voltage:
R1
≈
’
◊
VBOOST_OVP = VBOOST
+
+1 ì(VFB_OVP - VBG )
∆
«
÷
R2
where
•
VBOOST is the current target boost adaptive voltage, which in most time is the current largest LED string forward
voltage among multiple strings + 0.9 V in steady state
•
•
•
VFB_OVP = 2.3 V
VBG = 1.2 V
R1 and R2 is the resistor value of FB external network in Using Two-Divider and Using T-Divider
(6)
For example, if R1 is set to 750 kΩ and R2 is set to 130 kΩ, VBOOST will report OVP when the boost voltage is 7.4
V above target boost voltage.
This equation holds true in both two-divider FB external network and T-divider FB external network.
8.3.4.2.2 SW Overvoltage Fault (SW_OVP)
Besides boost overvoltage protection, the LP886xC-Q1 supports SW pin overvoltage protection to further protect
the boost system from overvoltage scenario. If during LP886xC-Q1 operation, the SW pin voltage exceeds the
VSW_OVP threshold, which is 49-V typical, the boost, LED outputs and the power-line FET are turned off, and the
device will enter FAULT RECOVERY mode. The FAULT pin will be pulled low. The LP886xC-Q1 will exit FAULT
RECOVERY mode after 100 ms and try the start-up sequence again. SW_OVP fault detection is available in
SOFT START, BOOST START and NORMAL state.
8.3.4.3 LED Fault and Protection
Every LED current sink has 3 comparators for LED fault detections.
OUT#
VHIGH_COMP
HIGH_COMP
VMID_COMP
MID_COMP
VLOW_COMP
LOW_COMP
CURRENT/PWM
CONTROL
图 14. Comparators for LED Fault Detection
图 15 shows cases which generates LED faults. Any LED faults will pull the Fault pin low.
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8.3.4.3.1 LED Open Fault (LED_OPEN)
During normal operation, boost voltage is raised if any of the used LED outputs falls below the VLOW_COMP
threshold. Open LED fault is detected if boost output voltage has reached the maximum and at least one LED
output is still below the threshold. The open string is then disconnected from the boost adaptive control loop and
its output is disabled.
8.3.4.3.2 LED Short Fault (LED_SHORT)
Shorted LED fault is detected if one or more LED outputs are above the VHIGH_COMP threshold (typical 6 V) and at
least one LED output is inside the normal operation window (between VLOW_COMP and VMID_COMP, typical 0.9 V
and 1.9 V). The shorted string is disconnected from the boost adaptive control loop and its output is disabled.
LED Open fault detection and LED Short fault detection are available only in NORMAL state.
Short LED fault
(at least one channel between
LOW_COMP and MID COMP)
Open LED fault
when
VBOOST = MAX
No actions
OUT1~4 PIN
VOLTAGE
Open LED Fault
Short LED Fault
VHIGH_COMP
VMID_COMP
VLOW_COMP
Normal Condition
Fault Condition
图 15. Protection and DC-DC Voltage Adaptation Algorithms
If LED fault is detected, the device continues normal operation and only the faulty string is disabled. The fault is
indicated via the FAULT pin which can be released by toggling VDDIO/EN pin low for a short period of 2 µs to 20
µs. LEDs are turned off for this period but the device stays in NORMAL state. If VDDIO/EN is low longer, the
device goes to STANDBY and restarts when EN goes high again.
This means if the system doesn't want to simply disable the device because of LED faults. It could clear the LED
faults by toggling VDDIO/EN pin low for a short period of 2 µs to 20 µs.
8.3.4.4 Thermal Fault and Protection (TSD)
If the die temperature of LP886xC-Q1 reaches the thermal shutdown threshold TTSD, which is 165°C typical, the
boost, power-line FET and LED outputs are turned off to protect the device from damage. The FAULT pin will be
pulled low. The LP886xC-Q1 will exit FAULT RECOVERY mode after 100 ms and try the start-up sequence
again. Only if the die temperature drops lower than TTSD - TTSD_HYS, which is 145°C typical, the device could
start-up normally. TSD fault detection is available in SOFT START, BOOST START and NORMAL state.
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8.3.4.5 Overview of the Fault and Protection Schemes
A summary of the LP886xC-Q1 fault detection behavior is shown in 表 3. Detected faults (excluding LED open or short) cause device to enter FAULT
RECOVERY state. In FAULT_RECOVERY the DC-DC and LED current sinks of the device are disabled, and the FAULT pin is pulled low. The device will
exit FAULT RECOVERY mode after 100 ms and try the start-up sequence again. When recovery is successful and device enters into NORMAL state, the
FAULT pin is released high.
表 3. Fault Detections
Enter FAULT_
RECOVERY
STATE
FAULT/
PROTECTION
FAULT
PIN
FAULT NAME
CONDITION
ACTIVE STATE
ACTION
VIN overvoltage
protection
SOFT START, BOOST
START, NORMAL
Device enters into FAULT RECOVERY state, and restarts after
100 ms
VIN_OVP
VIN > 42 V
Yes
Yes
Yes
Effective when VIN <
3.85 V
Released when VIN >4
V
VIN undervoltage
protection
SOFT START, BOOST
START, NORMAL
Device enters into FAULT RECOVERY state, and restarts after
100 ms
VIN_UVLO
Yes
Open string is removed from the DC-DC voltage control loop
and output is disabled.
Fault pin low could be released by toggling VDDIO/EN pin, If
VDDIO/EN is low for a period of 2 µs to 20 µs, LEDs are turned
off for this period but device stays in NORMAL.
Adaptive Voltage is
max. and
any OUTx voltage <
0.9 V
Open LED fault
LED _OPEN
Yes
Yes
No
No
NORMAL
Short string is removed from the DC-DC voltage control loop
and output is disabled.
Fault pin low could be released by toggling VDDIO/EN pin, If
VDDIO/EN is low for a period of 2 µs to 20 µs, LEDs are turned
off for this period but device stays NORMAL.
One of OUTx voltage
is [0.9 V, 1.9 V] and
any OUTx voltage > 6
V
Shorted LED fault
LED_SHORT
NORMAL
NORMAL
Fault is detected if boost overvoltage condition duration is more
than 560 ms
Device enters into FAULT RECOVERY state, and restarts after
100 ms
Boost overvoltage
protection
BST_OVP
SW_OVP
TSD
VFB > 2.3 V
VSW > 49 V
Yes
Yes
Yes
Yes
Yes
Yes
SW overvoltage
protection
SOFT START, BOOST
START, NORMAL
Device enters into FAULT RECOVERY state, and restarts after
100 ms
Effective when Tj >
165 ºC
Released when Tj <
145 ºC
SOFT START, BOOST
START, NORMAL
Device enters into FAULT RECOVERY state, and restarts until
TSD fault is released
Thermal protection
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8.4 Device Functional Modes
8.4.1 STANDBY State
The LP886xC-Q1 enters STANDBY state when the VIN voltage powers on and voltage is higher than VINUVLO
rising threshold, which is 4-V typical. In STANDBY state, the device is able to detect VDDIO/EN signal. When
VDDIO/EN is pulled high, the internal LDO wakes up and the device enters into SOFT START state. The device
will re-enter the STANDBY state when VDDIO/EN is pulled low for more than 50 µs.
8.4.2 SOFT START State
In SOFT START state, Power-line FET is enabled, and boost input and output capacitors are charged to VIN
level. VIN_OVP, VIN_UVLO, SW_OVP and TSD fault are active. After 65 ms, the device enters into BOOST
START state.
8.4.3 BOOST START State
In BOOST START state, DC-DC controller is turned on and boost voltage is ramped to initial boost voltage level
with reduced current limit. VIN_OVP, VIN_UVLO, SW_OVP and TSD fault are active in this state. After 50 ms,
LED outputs do a one-time detection on grounded outputs. Grounded outputs are disabled and excluded from
the adaptive voltage control loop. Then the device enters into NORMAL state.
8.4.4 NORMAL State
In NORMAL state, LED drivers are enabled when PWM signal is high. All faults are active in this state. Fault pin
will be released high in the start of NORMAL state if recovering from FAULT RECOVERY state and no fault is
available.
8.4.5 FAULT RECOVERY State
Non-LED faults can trigger fault recovery state. LED drivers, boost converter and power-line FET are all disabled.
After 100 ms, the device attempts to restart from SOFT START state if VDDIO/EN is still high.
8.4.6 State Diagram and Timing Diagram for Start-up and Shutdown
VIN > VUVLO
STANDBY
VDDIO / EN = 1
VDDIO / EN = 0
SOFT START
65 ms
50 ms
FAULT
FAULT
BOOST START
100 ms
FAULT RECOVERY
LED OUTPUT
CONFIGURATION
DETECTION
(1st time power-up only)
FAULT
NORMAL
VDDIO / EN = 0
图 16. State Diagram
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Device Functional Modes (接下页)
T=50ꢀs
t>500ꢀs
VIN
LDO
VDDIO/EN
SYNC
Headroom adaptation
VOUT=VIN level œ diode drop
VOUT
PWM OUT
IQ
Active mode
SOFT
START
BOOST
START
图 17. Timing Diagram for the Typical Start-Up and Shutdown
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9 Application and Implementation
注
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The LP886xC-Q1 is designed for automotive applications. The input voltage (VIN) is intended to be connected to
the automotive battery, which supports voltage range from 4.5 V to 40 V. Device internal circuitry is powered
from the integrated LDO.
The LP886xC-Q1 uses a simple four-wire control:
•
•
•
•
VDDIO/EN for enable
PWM input for brightness control
SYNC pin for boost synchronisation (optional)
FAULT output to indicate fault condition (optional)
9.2 Typical Applications
9.2.1 Typical Application for 4 LED Strings
图 18 shows the typical application for LP8867-Q1 which supports 4 LED strings, 100 mA per string, , with a
boost switching frequency of 400 kHz.
VIN
5...28 V
L1
D1
Up to 34V
COUT
CIN
R2
R1
SW
FB
VIN
CLDO
OUT1
LDO
LP8867C-Q1
OUT2
OUT3
RFSET
FSET
SYNC
PWM
OUT4
ISET
BRIGHTNESS
VDDIO/EN
FAULT
VDDIO/EN
FAULT
R8
VDDIO/EN
PGND GND PAD
RISET
图 18. Four Strings 100 mA per String Configuration
24
版权 © 2019, Texas Instruments Incorporated
LP8867C-Q1, LP8869C-Q1
www.ti.com.cn
ZHCSK37 –AUGUST 2019
Typical Applications (接下页)
9.2.1.1 Design Requirements
DESIGN PARAMETER
VALUE
5 V – 28 V
4P8S LEDs (30 V max)
100 mA
VIN voltage range
LED string
LED string current
Maximum boost voltage
34 V
Boost switching frequency
400 kHz
External boost sync
not used
Boost spread spectrum
enabled
L1
CIN
33 μH
100 µF, 50 V
CIN BOOST
COUT
CLDO
RISET
RFSET
R1
2 × (10 µF, 50-V ceramic) + 33 µF, 50-V electrolytic
2 × (10 µF, 50-V ceramic) + 33 µF, 50-V electrolytic
1 µF, 10 V
24 kΩ
160 kΩ
685 kΩ
130 kΩ
10 kΩ
R2
R8
9.2.1.2 Detailed Design Procedure
9.2.1.2.1 Inductor Selection
There are two main considerations when choosing an inductor; the inductor must not saturate, and the inductor
current ripple must be small enough to achieve the desired output voltage ripple. Different saturation current
rating specifications are followed by different manufacturers so attention must be given to details. Saturation
current ratings are typically specified at 25°C. However, ratings at the maximum ambient temperature of
application should be requested from the manufacturer. Shielded inductors radiate less noise and are preferred.
The saturation current must be greater than the sum of the maximum load current, and the worst case average-
to-peak inductor current. 公式 7 shows the worst case conditions
IOUTMAX
ISAT
>
+ IRIPPLE
For Boost
D‘
VIN
x
VOUT
(VOUT - VIN)
(2 x L x f)
Where IRIPPLE
=
(VOUT œ VIN)
and D‘ = (1 - D)
Where D =
(VOUT
)
•
•
•
•
•
•
•
IRIPPLE - peak inductor current
IOUTMAX - maximum load current
VIN - minimum input voltage in application
L - min inductor value including worst case tolerances
f - minimum switching frequency
VOUT - output voltage
D - Duty Cycle for CCM Operation
(7)
As a result, the inductor should be selected according to the ISAT. A more conservative and recommended
approach is to choose an inductor that has a saturation current rating greater than the maximum current limit. A
saturation current rating of at least 4.1 A is recommended for most applications. See 表 2 for recommended
inductance value for the different switching frequency ranges. The inductor’s resistance should be less than
300 mΩ for good efficiency.
版权 © 2019, Texas Instruments Incorporated
25
LP8867C-Q1, LP8869C-Q1
ZHCSK37 –AUGUST 2019
www.ti.com.cn
See detailed information in Understanding Boost Power Stages in Switch Mode Power Supplies.
Power Stage Desinger Tool can be used for the boost calculation.
9.2.1.2.2 Output Capacitor Selection
A ceramic capacitor with 2 × VMAX BOOST or more voltage rating is recommended for the output capacitor. The
DC-bias effect can reduce the effective capacitance by up to 80%, which needs to be considered in capacitance
value selection. If the selected ceramic capacitors' voltage rating is less than 2 × VMAX BOOST, an alternative way
is to increase the number of ceramic capacitors. Capacitance recommendations for different switching
frequencies are shown in 表 2. To minimize audible noise of ceramic capacitors their physical size should
typically be minimized.
9.2.1.2.3 Input Capacitor Selection
A ceramic capacitor with 2 × VIN MAX or more voltage rating is recommended for the input capacitor. The DC-bias
effect can reduce the effective capacitance by up to 80%, which needs to be considered in capacitance value
selection. If the selected ceramic capacitors' voltage rating is less than 2 × VMAX BOOST, an alternative way is to
increase the number of ceramic capacitors. Capacitance recommendations for different boost switching
frequencies are shown in 表 2.
9.2.1.2.4 LDO Output Capacitor
A ceramic capacitor with at least 10-V voltage rating is recommended for the output capacitor of the LDO. The
DC-bias effect can reduce the effective capacitance by up to 80%, which needs to be considered in capacitance
value selection. Typically a 1-µF capacitor is sufficient.
9.2.1.2.5 Diode
A Schottky diode should be used for the boost output diode. Do not use ordinary rectifier diodes, because slow
switching speeds and long recovery times degrade the efficiency and the load regulation. Diode rating for peak
repetitive current should be greater than inductor peak current (up to 4.1 A) to ensure reliable operation in boost
mode. Average current rating should be greater than the maximum output current. Schottky diodes with a low
forward drop and fast switching speeds are ideal for increasing efficiency. Choose a reverse breakdown voltage
of the Schottky diode significantly larger than the output voltage. The junction capacitance of Schottky diodes are
also very important. Big junction capacitance leads to huge reverse current and big noise when boost is
switching. A <500-pF junction capacitance at VR= 0.1 V Schottky diode is recommended.
9.2.1.3 Application Curves
100
96
92
88
84
80
76
VIN = 16V
VIN = 12V
72
VIN = 8V
VIN = 6V
68
80
160
240
320
400
ƒsw=400 kHz, 22 μH
图 19. System Efficiency
480
Output Current (mA)
D011
Load 4 strings, VBoost = 30 V
图 20. Typical Start-Up
26
版权 © 2019, Texas Instruments Incorporated
LP8867C-Q1, LP8869C-Q1
www.ti.com.cn
ZHCSK37 –AUGUST 2019
9.2.2 SEPIC Mode Application
When LED string voltage can be above or below VIN voltage, SEPIC configuration can be used. In this example,
two separate coils or coupled coil could both be used for SEPIC. Separate coils can enable lower height external
components to be used, compared to a coupled coil solution. On the other hand, coupled coil typically maximizes
the efficiency. Also, in this example, an external clock is used to synchronize SEPIC switching frequency.
External clock input can be modulated to spread switching frequency spectrum.
VIN
4.5...30 V
D1
Up to 20V
COUT
CIN BOOST
L1
C1
R2
R1
C2
SW
VIN
FB
Up to 100mA/String
CLDO
OUT1
LDO
LP8867C-Q1
OUT2
OUT3
RFSET
FSET
SYNC
PWM
OUT4
ISET
BRIGHTNESS
VDDIO/EN
FAULT
VDDIO/EN
FAULT
R3
VDDIO/EN
PGND GND
PAD
RISET
图 21. SEPIC Mode, 4 Strings 100 mA and String Configuration
版权 © 2019, Texas Instruments Incorporated
27
LP8867C-Q1, LP8869C-Q1
ZHCSK37 –AUGUST 2019
www.ti.com.cn
9.2.2.1 Design Requirements
DESIGN PARAMETER
VALUE
VIN voltage range
4.5 V – 30 V
LED string
4P4S LEDs (15 V max)
LED string current
100 mA
Maxmum output voltage
20 V
SEPIC switching frequency
2.2 MHz
External sync for SEPIC
used
Spread spectrum
Internal spread spectrum disabled (external sync used)
L1, L2
CIN
4.7 μH
10 µF 50 V
CIN SEPIC
C1
2 × 10 µF, 50-V ceramic + 33 µF, 50-V electrolytic
10-µF 50-V ceramic
C2
30 pF
COUT
CLDO
RISET
RFSET
R1
2 × 10 µF, 50-V ceramic + 33 µF, 50-V electrolytic
1 µF, 10 V
24 kΩ
24 kΩ
265 kΩ
37 kΩ
R2
R3
10 kΩ
9.2.2.2 Detailed Design Procedure
In SEPIC mode the maximum voltage at the SW pin is equal to the sum of the input voltage and the output
voltage. Because of this, the maximum sum of input and output voltage must be limited below 49 V. See the
Detailed Design Procedure section for general external component guidelines. Main differences of SEPIC
compared to boost are described below.
Power Stage Designer™ Tool can be used for modeling SEPIC behavior. For detailed explanation on SEPIC see
Texas Instruments Analog Applications Journal Designing DC/DC Converters Based on SEPIC Topology.
9.2.2.2.1 Inductor
In SEPIC mode, currents flowing through the coupled inductors or the two separate inductors L1 and L2 are the
input current and output current, respectively. Values can be calculated using Power Stage Designer™ Tool or
using equations in Designing DC/DC Converters Based on SEPIC Topology.
9.2.2.2.2 Diode
In SEPIC mode diode peak current is equal to the sum of input and output currents. Diode rating for peak
repetitive current should be greater than SW pin current limit (up to 4.1 A for transients) to ensure reliable
operation in boost mode. Average current rating should be greater than the maximum output current. Diode
voltage rating must be higher than sum of input and output voltages.
9.2.2.2.3 Capacitor C1
TI recommends a ceramic capacitor with low ESR. Capacitor voltage rating must be higher than maximum input
voltage.
28
版权 © 2019, Texas Instruments Incorporated
LP8867C-Q1, LP8869C-Q1
www.ti.com.cn
ZHCSK37 –AUGUST 2019
9.2.2.3 Application Curves
90
88
86
84
82
80
78
76
74
72
70
84
82
80
78
76
74
72
70
68
66
64
VIN = 16V
VIN = 12V
VIN = 8V
VIN = 6V
VIN = 16V
VIN = 12V
VIN = 8V
VIN = 6V
80
160
240 320
Output Current (mA)
400
480
80
160
240 320
Output Current (mA)
400
480
D012
D013
4 strings, 4 LEDs per string
fsw = 2.2 MHz
4 strings, 4LEDs per string
fsw = 2.2 MHz
IHCL-4040DZ-5A 4.7 μH
IHCL-4040DZ-5A 4.7 μH
图 22. SEPIC Efficiency
图 23. System Efficiency
10 Power Supply Recommendations
The device is designed to operate from an automotive battery. Device should be protected from reversal voltage
and voltage dump over 50 V. The resistance of the input supply rail must be low enough so that the input current
transient does not cause a high drop at LP886xC-Q1 VIN pin. If the input supply is connected by using long
wires, additional bulk capacitance may be required in addition to the ceramic bypass capacitors in the VIN line.
版权 © 2019, Texas Instruments Incorporated
29
LP8867C-Q1, LP8869C-Q1
ZHCSK37 –AUGUST 2019
www.ti.com.cn
11 Layout
11.1 Layout Guidelines
图 24 is a layout recommendation for LP886xV-Q1 used to demonstrate the principles of a good layout. This
layout can be adapted to the actual application layout if or where possible. It is important that all boost
components are close to the chip, and the high current traces must be wide enough. By placing boost
components on one side of the chip it is easy to keep the ground plane intact below the high current paths. This
way other chip pins can be routed more easily without splitting the ground plane. Bypass LDO capacitor must be
placed as close as possible to the device.
Here are some main points to help the PCB layout work:
•
Current loops need to be minimized:
–
For low frequency the minimal current loop can be achieved by placing the boost components as close as
possible to the SW and PGND pins. Input and output capacitor grounds must be close to each other to
minimize current loop size.
–
Minimal current loops for high frequencies can be achieved by making sure that the ground plane is intact
under the current traces. High-frequency return currents find a route with minimum impedance, which is
the route with minimum loop area, not necessarily the shortest path. Minimum loop area is formed when
return current flows just under the positive current route in the ground plane, if the ground plane is intact
under the route. To minimize the current loop for high frequencies:
–
–
Inductor's pin in SW node needs to be as near as possible to chip's SW pin
Put a small capacitor as near as possible to the diode's pin in boost output node and arrange vias to
PGND plane close to the capacitor's GND pin.
•
•
Use separate power and noise-free grounds. PGND is used for boost converter return current and noise-free
ground is used for more sensitive signals, such as LDO bypass capacitor grounding as well as grounding the
GND pin of the device.
Boost output feedback voltage to LEDs must be taken out after the output capacitors, not straight from the
diode cathode.
•
•
Place LDO 1-µF bypass capacitor as close as possible to the LDO pin.
Input and output capacitors require strong grounding (wide traces, many vias to GND plane).
30
版权 © 2019, Texas Instruments Incorporated
LP8867C-Q1, LP8869C-Q1
www.ti.com.cn
ZHCSK37 –AUGUST 2019
11.2 Layout Example
VIN
GND
PGND
1
2
VIN
VIN
NC
20
19
18
17
16
15
14
13
12
11
LDO
FSET
RFSET
3
SW
GND
VDDIO/EN
VBOOST
4
PGND
FB
PGND
FAULT
SYNC
PWM
NC
5
6
OUT1
OUT2
OUT3
OUT4
GND
7
8
PGND
GND
RISET
9
10
ISET
GND
LED STRINGS
Vias to PGND Plane
The only Connection points
between GND & PGND
图 24. LP886xC-Q1 Boost Layout
版权 © 2019, Texas Instruments Incorporated
31
LP8867C-Q1, LP8869C-Q1
ZHCSK37 –AUGUST 2019
www.ti.com.cn
12 器件和文档支持
12.1 器件支持
12.1.1 开发支持
Power Stage Designer™工具可用于升压和 SEPIC 模式：http://www.ti.com.cn/tool/cn/powerstage-designer
12.2 文档支持
12.2.1 相关文档
请参阅如下相关文档：
•
•
•
《PowerPAD™ 散热增强型封装》
《了解开关模式电源中的升压功率级》
《基于 SEPIC 拓扑设计 DC/DC 转换器》
12.3 接收文档更新通知
要接收文档更新通知，请导航至 ti.com. 上的器件产品文件夹。单击右上角的通知我进行注册，即可每周接收产品
信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
12.4 社区资源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.5 商标
Power Stage Designer, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.6 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损
伤。
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更，恕不另行通知，且
不会对此文档进行修订。如需获取此数据表的浏览器版本，请查阅左侧的导航栏。
32
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
LP8867CQPWPRQ1
LP8869CQPWPRQ1
ACTIVE
ACTIVE
HTSSOP
HTSSOP
PWP
PWP
20
20
2000 RoHS & Green
2000 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 125
-40 to 125
8867CQ
8869CQ
NIPDAU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
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