MMBTH34S62Z [TI]

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB;
MMBTH34S62Z
型号: MMBTH34S62Z
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB

放大器 光电二极管 晶体管
文件: 总2页 (文件大小:69K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
October 1985  
MMBTH34 Surface Mount NPN RF-IF Amp  
General Description  
This device was designed for common-emitter low noise  
amplifier and mixer applications in the 100 mA to 15 mA  
range to 300 MHz, and low frequency drift common-base  
VHF oscillator applications with high output levels for driving  
FET mixers.  
Absolute Maximum Ratings  
Collector-Base Voltage  
TL/G/8548–1  
45V  
4.0V  
Marking:  
Emitter-Base Voltage  
MMBTH34-3K  
Collector CurrentÐContinuous  
100 mA  
Refer to Process 47 for graphs.  
e
Total Device Dissipation, T  
A
Derate above 25 C (Note 1)  
25 C  
§
350 C  
§
2.8 mW/ C  
§
§
Operating Temperature Range  
b
b
a
55 C to 150 C  
§
§
§
a
55 C to 150 C  
Storage Temperature Range  
§
Lead Temperature for 10 seconds  
300 C  
§
Note 1: Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.  
e
Electrical Characteristics T  
Symbol  
25 C unless otherwise specified  
§
A
Conditions  
Min  
45  
Typ  
Max  
Units  
V
e
e
e
BV  
BV  
BV  
I
I
I
100 mA  
1.0 mA  
10 mA  
CBO  
CEO  
EBO  
C
C
E
45  
V
4.0  
V
e
CB  
I
I
V
V
V
V
30V  
50  
50  
nA  
nA  
CBO  
CES  
e
e
e
30V  
CE  
CE  
CE  
e
C
h
h
15V, I  
7.0 mA  
20 mA  
2.0 mA  
7.0 mA  
40  
15  
FE  
e
2.0V, I  
FE  
C
B
e
C
e
e
V
V
I
20 mA, I  
0.5  
V
V
CE(s)  
e
V
CE  
V
CB  
V
CE  
15V, I  
C
0.95  
0.32  
BE(on)  
e
e
e
1 MHz  
C
10V, f  
pF  
cb  
fe  
e
e
100 MHz  
h
15V, I  
15 mA, f  
5.0  
C
Order Number MMBTH34 or MMBTH34-HIGH  
See NS Package Number M03  
C
1995 National Semiconductor Corporation  
TL/G/8548  
RRD-B30M115/Printed in U. S. A.  
Physical Dimensions inches (millimeters)  
SOT-23 3-Lead Molded Dual-In-Line (M)  
Order Number MMBTH34 or MMBTH34-HIGH  
NS Package Number M03  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL  
SEMICONDUCTOR CORPORATION. As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant  
into the body, or (b) support or sustain life, and whose  
failure to perform, when properly used in accordance  
with instructions for use provided in the labeling, can  
be reasonably expected to result in a significant injury  
to the user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
National Semiconductor  
Corporation  
National Semiconductor  
Europe  
National Semiconductor  
Hong Kong Ltd.  
National Semiconductor  
Japan Ltd.  
a
1111 West Bardin Road  
Arlington, TX 76017  
Tel: 1(800) 272-9959  
Fax: 1(800) 737-7018  
Fax:  
(
49) 0-180-530 85 86  
@
13th Floor, Straight Block,  
Ocean Centre, 5 Canton Rd.  
Tsimshatsui, Kowloon  
Hong Kong  
Tel: (852) 2737-1600  
Fax: (852) 2736-9960  
Tel: 81-043-299-2309  
Fax: 81-043-299-2408  
Email: cnjwge tevm2.nsc.com  
a
a
a
a
Deutsch Tel:  
English Tel:  
Fran3ais Tel:  
Italiano Tel:  
(
(
(
(
49) 0-180-530 85 85  
49) 0-180-532 78 32  
49) 0-180-532 93 58  
49) 0-180-534 16 80  
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.  

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