MOC3009 [TI]
OPTOCOUPLERS/OPTOISOLATORS; 光耦合器/光隔离器
| 型号： | MOC3009 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | OPTOCOUPLERS/OPTOISOLATORS |
| 文件： | 总7页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOC3009 THRU MOC3012
OPTOCOUPLERS/OPTOISOLATORS
SOES024A – AUGUST 1985 – REVISED APRIL 1998
MOC30209– MOC3012 . . . PACKAGE
(TOP VIEW)
250 V Phototriac Driver Output
Gallium-Arsenide-Diode Infrared Source
and Optically Coupled Silicon Traic Driver
(Bilateral Switch)
ANODE
CATHODE
NC
MAIN TERM
1
2
3
6
5
4
†
TRIAC SUB
MAIN TERM
UL Recognized . . . File Number E65085
High Isolation . . . 7500 V Peak
Output Driver Designed for 115 Vac
Standard 6-Pin Plastic DIP
†
Do not connect this terminal
NC – No internal connection
Directly Interchangeable with Motorola
MOC3009, MOC3010, MOC3011, and
MOC3012
logic diagram
1
6
4
typical 115 Vac(rms) applications
Solenoid/Valve Controls
Lamp Ballasts
2
Interfacing Microprocessors to 115-Vac
Peripherals
Motor Controls
Incandescent Lamp Dimmers
†
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)
Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . 7.5 kV
Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 V
Input diode forward current, continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Output repetitive peak off-state voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 V
Output on-state current, total rms value (50-60 Hz, full sine wave):T = 25°C . . . . . . . . . . . . . . . . . . . 100 mA
A
T = 70°C . . . . . . . . . . . . . . . . . . . . 50 mA
A
Output driver nonrepetitive peak on-state current (t = 10 ms, duty cycle = 10%, see Figure 7) . . . . . 1.2 A
w
Continuous power dissipation at (or below) 25°C free-air temperature:
Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Phototriac (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Total device (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330 mW
Operating junction temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 100°C
J
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 150°C
stg
Lead temperature 1,6 (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Input-to-output peak voltage is the internal device dielectric breakdown rating.
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C.
3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C.
4. Derate linearly to 100°C free-air temperature at the rate of 4.4 mW/°C.
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MOC3009 THRU MOC3012
OPTOCOUPLERS/OPTOISOLATORS
SOES024A – AUGUST 1985 – REVISED APRIL 1998
electrical characteristics at 25°C free-air temperature (unless otherwise noted)
PARAMETER
Static reverse current
TEST CONDITIONS
MIN
TYP
0.05
1.2
10
MAX
100
1.5
UNIT
µA
I
V = 3 V
R
R
V
Static forward voltage
I
F
= 10 mA
V
F
I
Repetitive off-state current, either direction
Critical rate of rise of off-state voltage
V
= 250 V,
See Note 5
100
nA
DRM
DRM
See Figure 1
= 15 mA,
dv/dt
12
V/µs
V/µs
dv/dt(c) Critical rate of rise of commutating voltage
MOC3009
I
O
See Figure 1
0.15
15
30
15
10
5
MOC3010
MOC3011
MOC3012
8
Input trigger current, either
direction
I
Output supply voltage = 3 V
mA
FT
5
V
Peak on-state voltage, either direction
Holding current, either direction
I
= 100 mA
1.8
3
V
TM
TM
I
H
100
µA
NOTE 5: Test voltage must be applied within dv/dt rating.
PARAMETER MEASUREMENT INFORMATION
V
CC
1
6
4
V
in
= 30 Vrms
2
10 kΩ
Input
2N3904
(see Note A)
NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input at 0 V. The frequency of V is increased until the
in
phototriac just turns on. This frequency is then used to calculate the dv/dt according to the formula:
dv dt
2 2 πfV
in
The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-V pulses to the input and increasing
the frequency of V until the phototriac stays on (latches) after the input pulse has ceased. With no further input pulses, the
in
frequency of V is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs may then be used
in
to calculate the dv/dt(c) according to the formula shown above.
Figure 1. Critical Rate of Rise Test Circuit
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MOC3009 THRU MOC3012
OPTOCOUPLERS/OPTOISOLATORS
SOES024A – AUGUST 1985 – REVISED APRIL 1998
TYPICAL CHARACTERISTICS
EMITTING-DIODE TRIGGER CURRENT (NORMALIZED)
vs
ON-STATE CHARACTERISTICS
FREE-AIR TEMPERATURE
800
600
400
200
1.4
1.3
1.2
1.1
1
Output t = 80 µs
w
I
= 20 mA
F
f = 60 Hz
T
A
= 25°C
0
–200
–400
0.9
0.8
–600
–800
–3
–2
–1
0
1
2
3
–50
–25
0
25
50
75
100
V
TM
– Peak On-State Voltage – V
T
A
Free-Air Temperature – °C
Figure 2
Figure 3
CRITICAL RATE OF RISE OF OUTPUT VOLTAGE
OFF-STATE dv/dt AND COMMUTATING dv/dt(c)
vs
CRITICAL RATE OF RISE OF OUTPUT VOLTAGE
OFF-STATE dv/dt AND COMMUTATING dv/dt(c)
vs
FREE-AIR TEMPERATURE
LOAD RESISTANCE
12
0.24
0.2
14
0.24
0.20
dv/dt
dv/dt(c)
T
= 25°C
A
See Figure 1
10
8
Off-State
12
0.16
0.12
0.08
0.04
0
10
8
0.16
0.12
6
Commutating
4
R
= 510 Ω
L
R
= 2 kΩ
L
6
4
0.08
0.04
2
dv/dt
dv/dt(c)
0
25
50
75
100
0
0.4
0.8
1.2
1.6
2
T
A
– Free-Air Temperature – °C
R
– Load Resistance – kΩ
L
Figure 4
Figure 5
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MOC3009 THRU MOC3012
OPTOCOUPLERS/OPTOISOLATORS
SOES024A – AUGUST 1985 – REVISED APRIL 1998
TYPICAL CHARACTERISTICS
RMS APPLIED VOLTAGE
(FOR dv/dt(c) = 0.15 V/µs)
vs
NONREPETITIVE PEAK ON-STATE CURRENT
vs
FREQUENCY
PULSE DURATION
1000
400
3
2
1
R
= 1 kΩ
L
T
A
= 25°C
T
A
= 25°C
dv/dt = 2√2πf V
I
See Figure 1
100
40
dv/dt = 0.15 V/µs
10
4
1
100
0
0.01
400
1 k
4 k
10 k
40 k 100 k
0.1
1
10
100
f – Frequency – Hz
t
w
– Pulse Duration – ms
Figure 6
Figure 7
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MOC3009 THRU MOC3012
OPTOCOUPLERS/OPTOISOLATORS
SOES024A – AUGUST 1985 – REVISED APRIL 1998
APPLICATIONS INFORMATION
R
L
MOC3009, MOC3012
R
in
180 Ω
1
6
V
CC
120 V, 60 Hz
2
4
Figure 8. Resistive Load
Z
L
MOC3009, MOC3012
R
in
180 Ω
0.1 µF
2.4 kΩ
1
2
6
4
V
CC
120 V, 60 Hz
I
≤ 15 mA
GT
Figure 9. Inductive Load With Sensitive-Gate Triac
Z
L
MOC3009, MOC3012
R
in
180 Ω
0.2 µF
1.2 kΩ
1
2
6
4
V
CC
120 V, 60 Hz
15 mA < I
GT < 50 mA
Figure 10. Inductive Load With Nonsensitive-Gate Triac
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MOC3009 THRU MOC3012
OPTOCOUPLERS/OPTOISOLATORS
SOES024A – AUGUST 1985 – REVISED APRIL 1998
MECHANICAL INFORMATION
Each device consists of a gallium-arsenide infrared-emitting diode optically coupled to a silicon phototriac mounted
on a 6-terminal lead frame encapsulated within an electrically nonconductive plastic compound. The case can
withstand soldering temperature with no deformation and device performance characteristics remain stable when
operated in high-humidity conditions.
9,40 (0.370)
8,38 (0.330)
6
5
4
Index Dot
(see Note B)
C
C
1
2
3
L
L
7,62 (0.300) T.P.
(see Note A)
1,78 (0.070)
0,51 (0.020)
5,46 (0.215)
2,95 (0.116)
6,61 (0.260)
6,09 (0.240)
1,78 (0.070) MAX
6 Places
Seating Plane
105°
90°
1,01 (0.040) MIN
2,29 (0.090)
1,27 (0.050)
4 Places
0,534 (0.021)
0,381 (0.015)
6 Places
3,81 (0.150)
3,17 (0.125)
0,305 (0.012)
0,203 (0.008)
2,54 (0.100) T.P.
(see Note A)
NOTES: A. Leads are within 0,13 mm (0.005 inch) radius of true position (T.P.) with maximum material condition and unit installed.
B. Pin 1 identified by index dot.
C. The dimensions given fall within JEDEC MO-001 AM dimensions.
D. All linear dimensions are given in millimeters and parenthetically given in inches.
Figure 11. Packaging Specifications
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998, Texas Instruments Incorporated
相关型号：
MOC3009-SM
Optocoupler - Trigger Device Output, 1 CHANNEL TRIAC OUTPUT OPTOCOUPLER, SURFACE MOUNT, DIP-6
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