SN54HC10FK [TI]

TRIPLE 3-INPUT POSITIVE-NAND GATES; 三路3输入正与非门
SN54HC10FK
型号: SN54HC10FK
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

TRIPLE 3-INPUT POSITIVE-NAND GATES
三路3输入正与非门

输入元件
文件: 总5页 (文件大小:79K)
中文:  中文翻译
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SN54HC10, SN74HC10  
TRIPLE 3-INPUT POSITIVE-NAND GATES  
SCLS083B – DECEMBER 1982 – REVISED MAY 1997  
SN54HC10 . . . J OR W PACKAGE  
SN74HC10 . . . D OR N PACKAGE  
(TOP VIEW)  
Package Options Include Plastic  
Small-Outline (D) and Ceramic Flat (W)  
Packages, Ceramic Chip Carriers (FK), and  
Standard Plastic (N) and Ceramic (J)  
300-mil DIPs  
1A  
1B  
V
CC  
1
2
3
4
5
6
7
14  
13  
12  
11  
1C  
1Y  
3C  
2A  
description  
2B  
These devices contain three independent 3-input  
NAND gates. They perform the Boolean function  
Y = A B C or Y = A + B + C in positive logic.  
2C  
10 3B  
9
8
2Y  
3A  
3Y  
GND  
The SN54HC10 is characterized for operation  
over the full military temperature range of –55°C  
to 125°C. The SN74HC10 is characterized for  
operation from –40°C to 85°C.  
SN54HC10 . . . FK PACKAGE  
(TOP VIEW)  
FUNCTION TABLE  
(each gate)  
3
2
1
20 19  
18  
1Y  
NC  
3C  
2A  
NC  
2B  
4
5
6
7
8
INPUTS  
17  
16  
OUTPUT  
Y
A
H
L
B
H
X
L
C
H
X
X
L
15 NC  
14  
9 10 11 12 13  
NC  
2C  
L
H
H
H
3B  
X
X
X
NC – No internal connection  
logic symbol  
1
1A  
1B  
1C  
2A  
2B  
2C  
3A  
3B  
3C  
&
2
12  
1Y  
13  
3
4
6
2Y  
5
9
10  
11  
8
3Y  
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.  
Pin numbers shown are for the D, J, N, and W packages.  
logic diagram (positive logic)  
A
B
C
Y
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN54HC10, SN74HC10  
TRIPLE 3-INPUT POSITIVE-NAND GATES  
SCLS083B – DECEMBER 1982 – REVISED MAY 1997  
absolute maximum ratings over operating free-air temperature range  
Supply voltage range, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V  
CC  
I
Input clamp current, I (V < 0 or V > V ) (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 mA  
IK  
I
CC  
Output clamp current, I  
(V < 0 or V > V ) (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 mA  
OK  
O O CC  
Continuous output current, I (V = 0 to V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25 mA  
Continuous current through V  
Package thermal impedance, θ (see Note 2): D package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127°C/W  
O
O
CC  
CC  
or GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±50 mA  
JA  
N package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78°C/W  
Storage temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C  
stg  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTES: 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
2. The package thermal impedance is calculated in accordance with JESD 51, except for through-hole packages, which use a trace  
length of zero.  
recommended operating conditions  
SN54HC10  
SN74HC10  
UNIT  
MIN NOM  
MAX  
MIN NOM  
MAX  
V
V
Supply voltage  
2
1.5  
3.15  
4.2  
0
5
6
2
1.5  
3.15  
4.2  
0
5
6
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
= 2 V  
High-level input voltage  
= 4.5 V  
= 6 V  
V
V
IH  
= 2 V  
0.5  
1.35  
1.8  
0.5  
1.35  
1.8  
V
IL  
Low-level input voltage  
= 4.5 V  
= 6 V  
0
0
0
0
V
V
Input voltage  
0
V
V
0
V
V
V
V
I
CC  
CC  
Output voltage  
0
0
O
CC  
CC  
V
CC  
V
CC  
V
CC  
= 2 V  
0
1000  
500  
400  
125  
0
1000  
500  
400  
85  
t
Input transition (rise and fall) time  
Operating free-air temperature  
= 4.5 V  
= 6 V  
0
0
ns  
t
0
0
T
–55  
–40  
°C  
A
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN54HC10, SN74HC10  
TRIPLE 3-INPUT POSITIVE-NAND GATES  
SCLS083B – DECEMBER 1982 – REVISED MAY 1997  
electrical characteristics over recommended operating free-air temperature range (unless  
otherwise noted)  
T
= 25°C  
SN54HC10  
SN74HC10  
A
PARAMETER  
TEST CONDITIONS  
V
UNIT  
CC  
MIN  
TYP  
MAX  
MIN  
1.9  
4.4  
5.9  
3.7  
5.2  
MAX  
MIN  
1.9  
MAX  
2 V  
4.5 V  
6 V  
1.9 1.998  
4.4 4.499  
5.9 5.999  
I
= –20 µA  
4.4  
OH  
V
V = V or V  
IH  
5.9  
V
OH  
OL  
I
IL  
IL  
I
I
= –4 mA  
4.5 V  
6 V  
3.98  
5.48  
4.3  
5.8  
3.84  
5.34  
OH  
= –5.2 mA  
OH  
2 V  
0.002  
0.001  
0.001  
0.17  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
I
= 20 µA  
4.5 V  
6 V  
OL  
V
V = V or V  
0.1  
0.1  
0.1  
V
I
IH  
I
I
= 4 mA  
4.5 V  
6 V  
0.26  
0.26  
±100  
2
0.4  
0.33  
0.33  
±1000  
20  
OL  
= 5.2 mA  
0.15  
0.4  
OL  
I
I
V = V  
I
or 0  
6 V  
±0.1  
±1000  
40  
nA  
µA  
pF  
I
CC  
CC  
V = V  
I
or 0,  
I
O
= 0  
6 V  
CC  
C
2 V to 6 V  
3
10  
10  
10  
i
switching characteristics over recommended operating free-air temperature range, C = 50 pF  
L
(unless otherwise noted) (see Figure 1)  
T = 25°C  
A
SN54HC10  
MIN MAX  
SN74HC10  
MIN MAX  
FROM  
(INPUT)  
TO  
(OUTPUT)  
PARAMETER  
V
UNIT  
CC  
MIN  
TYP  
35  
10  
9
MAX  
95  
2 V  
4.5 V  
6 V  
145  
29  
120  
24  
20  
95  
19  
16  
t
A, B, or C  
Y
Y
19  
ns  
pd  
t
16  
25  
2 V  
23  
6
75  
110  
22  
t
4.5 V  
6 V  
15  
ns  
5
13  
19  
operating characteristics, T = 25°C  
A
PARAMETER  
Power dissipation capacitance per gate  
TEST CONDITIONS  
TYP  
UNIT  
C
No load  
25  
pF  
pd  
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN54HC10, SN74HC10  
TRIPLE 3-INPUT POSITIVE-NAND GATES  
SCLS083B – DECEMBER 1982 – REVISED MAY 1997  
PARAMETER MEASUREMENT INFORMATION  
V
CC  
From Output  
Under Test  
Test  
Point  
Input  
50%  
50%  
0 V  
C
= 50 pF  
L
t
t
PLH  
PHL  
90%  
(see Note A)  
V
V
OH  
In-Phase  
Output  
90%  
t
50%  
10%  
50%  
10%  
LOAD CIRCUIT  
OL  
t
r
f
f
t
t
PLH  
PHL  
90%  
V
CC  
V
V
90%  
t
90%  
OH  
Input  
50%  
10%  
50%  
10%  
90%  
t
Out-of-Phase  
Output  
50%  
10%  
50%  
10%  
0 V  
OL  
t
r
f
t
r
VOLTAGE WAVEFORM  
INPUT RISE AND FALL TIMES  
VOLTAGE WAVEFORMS  
PROPAGATION DELAY AND OUTPUT TRANSITION TIMES  
NOTES: A.  
B. Phase relationships between waveforms were chosen arbitrarily. All input pulses are supplied by generators having the following  
characteristics: PRR 1 MHz, Z = 50 , t = 6 ns, t = 6 ns.  
C includes probe and test-fixture capacitance.  
L
O
r
f
C. The outputs are measured one at a time with one input transition per measurement.  
D. and t are the same as t  
t
.
pd  
PLH  
PHL  
Figure 1. Load Circuit and Voltage Waveforms  
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO  
BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
semiconductor products or services might be or are used. TI’s publication of information regarding any third  
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.  
Copyright 1998, Texas Instruments Incorporated  

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