SN65472DEP [TI]

SN65472-EP 双路外设驱动器 | D | 8 | -40 to 85;
SN65472DEP
型号: SN65472DEP
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

SN65472-EP 双路外设驱动器 | D | 8 | -40 to 85

驱动 光电二极管 接口集成电路 驱动器
文件: 总12页 (文件大小:594K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SN65472-EP  
www.ti.com.cn  
ZHCSBL0 SEPTEMBER 2013  
双路外设驱动器  
查询样品: SN65472-EP  
1
特性  
特别针对高达 300mA 的使用  
支持工业应用  
高压输出  
受控基线  
55V 时无输出闭锁  
(在传到 300mA 电流后)  
一个组装和测试场所  
一个制造场所  
中速切换  
(1)  
支持扩展(-40°C 125°C)温度范围  
延长的产品生命周期  
针对各种应用和逻辑功能选择的电路灵活性  
TTL 兼容二极管钳位输入  
标准电源电压  
延长的产品变更通知  
产品可追溯性  
D 封装  
(顶视图)  
1A  
1B  
V
CC  
1
2
3
4
8
7
6
5
2B  
2A  
2Y  
1Y  
GND  
(1) 可定制工作温度范围  
说明/订购信息  
SN56472 双路外设驱动器可与系列 SN7452B 和系列 SN75462 进行功能互换,但是被设计用于要求更高击穿电压  
的系统。此系统以稍慢于系列 75452B 系列产品的开关速度为代价提供高于这些系列产品所能够提供的击穿电  
压(与 系列 SN75462 限值一样)。 典型应用包括高速逻辑缓冲器,电源驱动器,中继驱动器,灯驱动器,MOS  
驱动器,线路驱动器和存储器驱动器。  
SN65472 是一个双路外设 NAND 驱动器(假定为正逻辑电路),逻辑门的输出在内部被连接至 npn 输出晶体管的  
底部。  
这个器件的运行温度范围为 -40°C 125°C。  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2013, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
English Data Sheet: SLRS061  
SN65472-EP  
ZHCSBL0 SEPTEMBER 2013  
www.ti.com.cn  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more  
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.  
ORDERING INFORMATION(1)  
TJ  
PACKAGE(2)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING  
65472  
VID NUMBER  
V62/13618-01XE-T  
V62/13618-01XE  
Tape of 75  
SN65472DEP  
-40°C to 125°C  
SOIC D  
Reel of 2500  
SN65472DREP  
65472  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
website at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
LOGIC SYMBOL  
LOGIC DIAGRAM (POSITIVE LOGIC)  
1
2
6
7
3
&
1A  
1B  
2A  
2B  
3
5
1
2
1Y  
1Y  
2Y  
1A  
1B  
5
4
6
7
2Y  
2A  
2B  
This symbol is in accordance with  
ANSI/IEEE Std 91-1984 and IEC  
Publication 617-12.  
GND  
Table 1. FUNCTION TABLE  
(EACH DRIVER)  
INPUTS  
Y(1)  
A
L
B
L
H (Off state)  
H (Off state)  
H (Off state)  
L (On state)  
L
H
L
H
H
H
(1) positive logic: Y = AB or A + B  
SCHEMATIC (EACH DRIVER)  
V
CC  
1.6 k  
4 kΩ  
130 Ω  
1.6 kΩ  
Y
A
B
500 Ω  
1 kΩ  
1 kΩ  
GND  
Resistor values shown are nominal.  
2
Copyright © 2013, Texas Instruments Incorporated  
SN65472-EP  
www.ti.com.cn  
ZHCSBL0 SEPTEMBER 2013  
ABSOLUTE MAXIMUM RATINGS(1)  
over operating free-air temperature range (unless otherwise noted)  
MIN  
MAX  
7
UNIT  
V
VCC  
VI  
Supply voltage range(2)  
Input voltage  
Inter-emitter voltage(3)  
5.5  
5.5  
70  
V
V
VO  
IO  
Off-state output voltage  
V
Continuous collector or output current(4)  
Peak collector or output current (tw 10 ms, duty cycle 50%)(4)  
Absolute maximum junction temperature range  
Storage temperature range  
400  
500  
150  
150  
mA  
mA  
°C  
°C  
TJ  
–40  
–65  
Tstg  
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating  
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) Voltage values are with respect to the network GND, unless otherwise specified.  
(3) This is the voltage between two emitters, A and B.  
(4) Both halves of these dual circuits may conduct rated current simultaneously; however, power dissipation averaged over a short time  
interval must fall within the continuous dissipation rating.  
THERMAL INFORMATION  
SN65472-EP  
THERMAL METRIC(1)  
D
8 PINS  
115.3  
59.7  
56.2  
13.5  
55.6  
N/A  
UNITS  
θJA  
Junction-to-ambient thermal resistance(2)  
Junction-to-case (top) thermal resistance(3)  
Junction-to-board thermal resistance(4)  
Junction-to-top characterization parameter(5)  
Junction-to-board characterization parameter(6)  
Junction-to-case (bottom) thermal resistance(7)  
θJCtop  
θJB  
°C/W  
ψJT  
ψJB  
θJCbot  
(1) 有关传统和全新热度量的更多信息,请参阅 IC 封装热度量 应用报告 (文献号:ZHCA543。  
(2) JESD51-2a 描述的环境中,按照 JESD51-7 的规定,在一个 JEDEC 标准高 K 电路板上进行仿真,从而获得自然对流条件下的结至环  
境热阻抗。  
(3) 通过在封装顶部模拟一个冷板测试来获得结至芯片外壳(顶部)的热阻。 不存在特定的 JEDEC 标准测试,但可在 ANSI SEMI 标准 G30-  
88 中找到内容接近的说明。  
(4) 按照 JESD51-8 中的说明,通过在配有用于控制 PCB 温度的环形冷板夹具的环境中进行仿真,以获得结至电路板的热阻。  
(5) 结至顶部的特征参数,( ψJT),估算真实系统中器件的结温,并使用 JESD51-2a(第 6 章和第 7 章)中描述的程序从仿真数据中提取出该  
参数以便获得 θJA  
(6) 结至电路板的特征参数,(ψJB),估算真实系统中器件的结温,并使用 JESD51-2a(第 6 章和第7 章)中描述的程序从仿真数据中提取出该  
参数以便获得 θJA  
(7) 通过在外露(电源)焊盘上进行冷板测试仿真来获得结至芯片外壳(底部)热阻。 不存在特定的 JEDEC 标准测试,但可在 ANSI SEMI  
标准 G30-88 中找到了内容接近的说明。  
间距  
RECOMMENDED OPERATING CONDITIONS  
MIN  
4.75  
2.1  
NOM  
MAX  
UNIT  
V
VCC  
VIH  
VIL  
TA  
Supply voltage  
5
5.25  
High-level input voltage  
V
Low-level input voltage  
0.8  
85  
V
Operating free-air temperature range  
Operating virtual junction temperature  
-40  
-40  
°C  
°C  
TJ  
125  
Copyright © 2013, Texas Instruments Incorporated  
3
SN65472-EP  
ZHCSBL0 SEPTEMBER 2013  
www.ti.com.cn  
ELECTRICAL CHARACTERISTICS  
These specifications apply for -40°C TJ 125°C (unless otherwise noted)  
PARAMETER  
Input clamp voltage  
TEST CONDITIONS  
VCC = 4.75 V, II = – 12 mA  
MIN  
TYP(1)  
MAX  
UNIT  
V
VIK  
IOH  
-1.2  
-1.5  
270  
0.4  
High-level output current  
VCC = 4.75 V, VIH = 2 V, VOH = 70 V  
VCC = 4.75 V, VIL= 0.8 V, IOL = 100 mA  
VCC = 4.75 V, VIL= 0.8 V, IOL = 300 mA  
µA  
0.25  
0.5  
VOL  
II  
Low level output voltage  
V
0.75  
Input current at maximum input  
voltage  
VCC = 5.25 V, VI = 5.5 V  
1
mA  
IIH  
High-level input current  
Low-level input current  
VCC = 5.25 V, VI = 2.4 V  
VCC = 5.25 V, VI = 0.4 V  
VCC = 5.25 V, VI = 5 V  
VCC = 5.25 V, VI = 0  
44  
-1.6  
17  
µA  
mA  
mA  
mA  
IIL  
-1  
13  
61  
ICCH  
ICCL  
Supply current, outputs high  
Supply current, outputs low  
76  
(1) All typical values are at VCC = 5 V, TA = 25°C.  
SWITCHING CHARACTERISTICS  
VCC = 5 V, TA = 25°C, over operating free-air temperature range (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Propagation delay time,  
low-to-high-level output  
I
O 200 mA, CL = 15 pF, RL = 50 Ω,  
tPLH  
tPHL  
tTLH  
tTHL  
VOH  
45  
65  
ns  
see Figure 2  
O 200 mA, CL = 15 pF, RL = 50 Ω,  
see Figure 2  
O 200 mA, CL = 15 pF, RL = 50 Ω,  
see Figure 2  
IO 200 mA, CL = 15 pF, RL = 50 Ω,  
Propagation delay time,  
high-to-low-level output  
I
30  
13  
10  
50  
25  
20  
ns  
ns  
Transition time,  
low-to-high-level output  
I
Transition time,  
high-to-low-level output  
ns  
see Figure 2  
High level output voltage after  
switching  
VS = 55 V, IO 300 mA,  
see Figure 3  
VS - 18  
mV  
4
Copyright © 2013, Texas Instruments Incorporated  
SN65472-EP  
www.ti.com.cn  
ZHCSBL0 SEPTEMBER 2013  
1000000  
100000  
10000  
Wirebond Voiding Fail Mode  
1000  
80  
85  
90  
95  
100 105 110 115 120 125 130 135 140 145 150  
Junction Temperature (°C)  
(1) See Datasheet for Absolute Maximum and minimum Recommended Operating Conditions.  
(2) Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect  
life).  
Figure 1. SN65472-EP Wirebond Life Derating Chart  
Copyright © 2013, Texas Instruments Incorporated  
5
SN65472-EP  
ZHCSBL0 SEPTEMBER 2013  
www.ti.com.cn  
PARAMETER MEASUREMENT INFORMATION  
Input  
2.4 V  
’472  
10 V  
R
= 50 Ω  
L
0.5 µs  
5 ns  
10 ns  
Output  
3 V  
0 V  
Pulse  
Generator  
(see Note A)  
90%  
50%  
90%  
50%  
Input  
’472  
Circuit  
Under  
Test  
10%  
10%  
t
t
PHL  
PLH  
90%  
V
OH  
C
= 15 pF  
(see Note B)  
L
90%  
GND SUB  
50%  
10%  
50%  
10%  
Output  
V
OL  
t
t
TLH  
THL  
VOLTAGE WAVEFORMS  
TEST CIRCUIT  
NOTES: A. The pulse generator has the following characteristics: PRR 1 MHz, Z 50 Ω.  
O
B.  
C includes probe and jig capacitance.  
L
Figure 2. Switching Times  
V
S
= 55 V  
2 mH  
Input  
2.4 V  
’472  
5 V  
40 µs  
10 ns  
5 ns  
1N3064  
180 Ω  
Output  
3 V  
90%  
50%  
90%  
50%  
Input  
’472  
Pulse  
Generator  
(see Note A)  
10%  
10%  
0 V  
V
Circuit  
Under  
Test  
OH  
C
= 15 pF  
(see Note B)  
Output  
L
GND SUB  
V
OL  
VOLTAGE WAVEFORMS  
TEST CIRCUIT  
NOTES: A. The pulse generator has the following characteristics: PRR 12.5 kHz, Z 50 Ω.  
O
B.  
C includes probe and jig capacitance.  
L
Figure 3. Latch-Up Test  
6
Copyright © 2013, Texas Instruments Incorporated  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
SN65472DEP  
SN65472DREP  
V62/13618-01XE  
V62/13618-01XE-T  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
SOIC  
SOIC  
SOIC  
SOIC  
D
D
D
D
8
8
8
8
75  
RoHS & Green  
NIPDAU  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
65472  
65472  
65472  
65472  
2500 RoHS & Green  
2500 RoHS & Green  
NIPDAU  
NIPDAU  
NIPDAU  
75  
RoHS & Green  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE OUTLINE  
D0008A  
SOIC - 1.75 mm max height  
SCALE 2.800  
SMALL OUTLINE INTEGRATED CIRCUIT  
C
SEATING PLANE  
.228-.244 TYP  
[5.80-6.19]  
.004 [0.1] C  
A
PIN 1 ID AREA  
6X .050  
[1.27]  
8
1
2X  
.189-.197  
[4.81-5.00]  
NOTE 3  
.150  
[3.81]  
4X (0 -15 )  
4
5
8X .012-.020  
[0.31-0.51]  
B
.150-.157  
[3.81-3.98]  
NOTE 4  
.069 MAX  
[1.75]  
.010 [0.25]  
C A B  
.005-.010 TYP  
[0.13-0.25]  
4X (0 -15 )  
SEE DETAIL A  
.010  
[0.25]  
.004-.010  
[0.11-0.25]  
0 - 8  
.016-.050  
[0.41-1.27]  
DETAIL A  
TYPICAL  
(.041)  
[1.04]  
4214825/C 02/2019  
NOTES:  
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.  
Dimensioning and tolerancing per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed .006 [0.15] per side.  
4. This dimension does not include interlead flash.  
5. Reference JEDEC registration MS-012, variation AA.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
D0008A  
SOIC - 1.75 mm max height  
SMALL OUTLINE INTEGRATED CIRCUIT  
8X (.061 )  
[1.55]  
SYMM  
SEE  
DETAILS  
1
8
8X (.024)  
[0.6]  
SYMM  
(R.002 ) TYP  
[0.05]  
5
4
6X (.050 )  
[1.27]  
(.213)  
[5.4]  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:8X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
EXPOSED  
METAL  
EXPOSED  
METAL  
.0028 MAX  
[0.07]  
.0028 MIN  
[0.07]  
ALL AROUND  
ALL AROUND  
SOLDER MASK  
DEFINED  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
4214825/C 02/2019  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
D0008A  
SOIC - 1.75 mm max height  
SMALL OUTLINE INTEGRATED CIRCUIT  
8X (.061 )  
[1.55]  
SYMM  
1
8
8X (.024)  
[0.6]  
SYMM  
(R.002 ) TYP  
[0.05]  
5
4
6X (.050 )  
[1.27]  
(.213)  
[5.4]  
SOLDER PASTE EXAMPLE  
BASED ON .005 INCH [0.125 MM] THICK STENCIL  
SCALE:8X  
4214825/C 02/2019  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
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AC PLASMA DISPLAY DRIVER, PQCC44
TI

SN65500EN

AC PLASMA DISPLAY DRIVERS
TI

SN65500EN-00

AC PLASMA DISPLAY DRIVER, PDIP40
TI

SN65500EN-10

AC PLASMA DISPLAY DRIVER, PDIP40
TI

SN65501E

AC PLASMA DISPLAY DRIVERS
TI

SN65501EFN

AC PLASMA DISPLAY DRIVERS
TI

SN65501EN

AC PLASMA DISPLAY DRIVERS
TI

SN65501EN-00

AC PLASMA DISPLAY DRIVER, PDIP40
TI

SN65501EN-10

AC PLASMA DISPLAY DRIVER, PDIP40
TI