SN74ABT7820-15PH [TI]

512 x 18 x 2 bidirectional asynchronous FIFO memory 80-QFP 0 to 70;
SN74ABT7820-15PH
型号: SN74ABT7820-15PH
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

512 x 18 x 2 bidirectional asynchronous FIFO memory 80-QFP 0 to 70

时钟 先进先出芯片 信息通信管理 内存集成电路
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SN74ABT7820  
512 × 18 × 2  
STROBED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS206D – AUGUST 1991 – REVISED APRIL 1998  
Member of the Texas Instruments  
Widebus Family  
Empty, Full, and Half-Full Flags  
Fast Access Times of 12 ns With a 50-pF  
Load and Simultaneous Switching Data  
Outputs  
Advanced BiCMOS Technology  
Independent Asynchronous Inputs and  
Outputs  
Supports Clock Rates up to 67 MHz  
Two Separate 512 × 18 FIFOs Buffering  
Data in Opposite Directions  
Package Options Include 80-Pin Quad Flat  
(PH) and 80-Pin Thin Quad Flat (PN)  
Packages  
Programmable Almost-Full/Almost-Empty  
Flags  
PH PACKAGE  
(TOP VIEW)  
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65  
1
2
3
4
5
6
7
64  
63  
RSTA  
PENA  
AF/AEA  
HFA  
FULLA  
GND  
RSTB  
PENB  
AF/AEB  
HFB  
FULLB  
GND  
B0  
62  
61  
60  
59  
58  
57  
56  
55  
54  
53  
A0  
A1  
8
9
B1  
V
V
B2  
CC  
A2  
CC  
10  
11  
12  
13  
14  
15  
A3  
GND  
A4  
A5  
GND  
A6  
A7  
GND  
A8  
B3  
GND  
B4  
B5  
GND  
B6  
B7  
GND  
B8  
52  
51  
50  
49  
48  
47  
16  
17  
18  
19  
20  
21  
22  
23  
24  
46  
45  
44  
A9  
B9  
V
V
CC  
CC  
43  
42  
41  
A10  
A11  
B10  
B11  
GND  
GND  
25 26 27 28 29 30 3132 33 34 35 36 37 38 39 40  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Widebus is a trademark of Texas Instruments Incorporated.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ABT7820  
512 × 18 × 2  
STROBED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS206D – AUGUST 1991 – REVISED APRIL 1998  
PN PACKAGE  
(TOP VIEW)  
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61  
AF/AEA  
HFA  
AF/AEB  
HFB  
1
2
3
4
60  
59  
58  
57  
FULLA  
GND  
A0  
FULLB  
GND  
5
6
56 B0  
A1  
B1  
55  
54  
53  
7
8
9
V
V
CC  
B2  
CC  
A2  
A3  
B3  
52  
51  
50  
GND  
A4  
GND  
B4  
10  
11  
49  
48  
47  
46  
A5  
B5  
12  
13  
14  
15  
16  
17  
18  
19  
GND  
A6  
GND  
B6  
A7  
B7  
45  
44  
GND  
A8  
GND  
B8  
43  
42  
41  
A9  
B9  
V
V
CC  
B10  
CC  
A10  
20  
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40  
description  
A FIFO memory is a storage device that allows data to be written into and read from its array at independent  
data rates. The SN74ABT7820 is arranged as two 512 × 18-bit FIFOs for high speed and fast access times. It  
processes data at rates up to 67 MHz with access times of 12 ns in a bit-parallel format.  
The SN74ABT7820 consists of bus-transceiver circuits, two 512 × 18 FIFOs, and control circuitry arranged for  
multiplexed transmission of data directly from the data bus or from the internal FIFO memories. Enable inputs  
(GAB and GBA) control the transceiver functions. The SAB and SBA control inputs select whether real-time or  
stored data is transferred. The circuitry used for select control eliminates the typical decoding glitch that occurs  
in a multiplexer during the transition between stored and real-time data. Figure 1 illustrates the eight  
fundamental bus-management functions that can be performed with the SN74ABT7820.  
The SN74ABT7820 is characterized for operation from 0°C to 70°C.  
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ABT7820  
512 × 18 × 2  
STROBED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS206D – AUGUST 1991 – REVISED APRIL 1998  
FIFO A  
FIFO A  
Out  
In  
Out  
In  
Bus A  
Bus B  
Bus B  
Bus B  
Bus A  
Bus A  
Bus A  
Bus A  
Bus B  
FIFO B  
Out  
FIFO B  
Out  
In  
In  
SAB SBA GAB GBA  
SAB SBA GAB GBA  
L
X
H
L
X
X
L
L
FIFO A  
FIFO A  
In  
Out  
In  
Out  
Bus A  
Bus B  
FIFO B  
Out  
FIFO B  
Out  
In  
In  
SAB SBA GAB GBA  
SAB SBA GAB GBA  
X
L
L
H
H
L
H
H
FIFO A  
FIFO A  
Out  
In  
Out  
In  
Bus A  
Bus B  
FIFO B  
Out  
FIFO B  
Out  
In  
In  
SAB SBA GAB GBA  
SAB SBA GAB GBA  
H
X
H
L
L
H
H
H
FIFO A  
FIFO A  
In Out  
In  
Out  
Bus B  
Bus A  
Bus B  
FIFO B  
Out  
FIFO B  
Out  
In  
In  
SAB SBA GAB GBA  
SAB SBA GAB GBA  
X
H
L
H
H
H
H
H
Figure 1. Bus-Management Functions  
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ABT7820  
512 × 18 × 2  
STROBED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS206D – AUGUST 1991 – REVISED APRIL 1998  
SELECT-MODE CONTROL TABLE  
CONTROL  
OPERATION  
SBA  
L
SAB  
L
A BUS  
B BUS  
Real-time B-to-A bus  
FIFO B-to-A bus  
Real-time A-to-B bus  
Real-time A-to-B bus  
FIFO A-to-B bus  
FIFO A-to-B bus  
H
L
L
H
Real-time B-to-A bus  
FIFO B-to-A bus  
H
H
OUTPUT-ENABLE CONTROL TABLE  
OPERATION  
CONTROL  
GBA  
GAB  
A BUS  
B BUS  
L
H
L
L
L
Isolation/input to A bus  
A bus enabled  
Isolation/input to B bus  
Isolation/input to B bus  
B bus enabled  
H
H
Isolation/input to A bus  
A bus enabled  
H
B bus enabled  
Figure 1. Bus-Management Functions (Continued)  
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ABT7820  
512 × 18 × 2  
STROBED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS206D – AUGUST 1991 – REVISED APRIL 1998  
logic symbol  
Φ
FIFO  
512 × 18 × 2  
SN74ABT7820  
66  
79  
SAB  
SBA  
1
0
MODE  
65  
80  
GAB  
GBA  
EN1  
EN2  
1
64  
63  
68  
RSTA  
RESET A  
RESET B  
PROG ENB  
LDCKB  
RSTB  
2
PENA  
PROG ENA  
PENB  
LDCKB  
77  
LDCKA  
UNCKA  
FULLA  
EMPTYA  
AF/AEA  
LDCKA  
69  
5
76  
60  
75  
62  
UNCKB  
UNCKA  
FULLA  
UNCKB  
FULLB  
FULLB  
EMPTYB  
AF/AEB  
70  
3
EMPTYA  
EMPTYB  
ALMOST FULL/  
ALMOST EMPTY A  
ALMOST FULL/  
ALMOST EMPTY B  
4
61  
HFA  
HALF-FULL A  
HALF-FULL B  
HFB  
7
58  
57  
55  
54  
52  
51  
A0  
A1  
0
0
B0  
B1  
B2  
B3  
B4  
8
10  
11  
13  
14  
A2  
A3  
A4  
A5  
B5  
16  
17  
19  
20  
22  
23  
25  
26  
28  
29  
31  
32  
49  
48  
46  
A6  
B6  
B7  
B8  
B9  
B10  
A7  
A8  
45  
43  
42  
40  
A Data  
B Data  
A9  
A10  
A11  
A12  
A13  
A14  
A15  
A16  
A17  
B11  
B12  
B13  
B14  
39  
37  
36  
34  
33  
B15  
B16  
B17  
17  
17  
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.  
Pin numbers shown are for the PH package.  
5
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ABT7820  
512 × 18 × 2  
STROBED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS206D – AUGUST 1991 – REVISED APRIL 1998  
logic diagram (positive logic)  
SAB  
SBA  
Φ
FIFO B  
512 × 18  
RSTB  
HFB  
AF/AEB  
PENB  
EMPTYB  
UNCKB  
FULLB  
LDCKB  
[1]  
[2]  
[3]  
[4]  
B0  
Q
D
GBA  
1 of 18 Channels  
[15]  
[16]  
[17]  
[18]  
To Other Channels  
GAB  
Φ
FIFO A  
512 × 18  
RSTA  
PENA  
HFA  
AF/AEA  
EMPTYA  
UNCKA  
FULLA  
LDCKA  
[1]  
[2]  
[3]  
[4]  
Q
A0  
D
1 of 18 Channels  
[15]  
[16]  
[17]  
[18]  
To Other Channels  
6
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ABT7820  
512 × 18 × 2  
STROBED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS206D – AUGUST 1991 – REVISED APRIL 1998  
Terminal Functions  
TERMINAL  
I/O  
DESCRIPTION  
A0A17  
I/O  
Port-A data. The 18-bit bidirectional data port for side A.  
FIFO A almost-full/almost-empty flag. Depth-offset values can be programmed for AF/AEA or the default value of 128 can  
be used for both the almost-empty offset (X) and the almost-full offset (Y). AF/AEA is high when FIFO A contains X or  
fewer words or (512 – Y) or more words. AF/AEA is set high after FIFO A is reset.  
AF/AEA  
AF/AEB  
O
O
FIFO B almost-full/almost-empty flag. Depth-offset values can be programmed for AF/AEB or the default value of 128 can  
be used for both the almost-empty offset (X) and the almost-full offset (Y). AF/AEB is high when FIFO B contains  
X or fewer words or (512 – Y) or more words. AF/AEB is set high after FIFO B is reset.  
B0B17  
EMPTYA  
I/O  
O
Port-B data. The 18-bit bidirectional data port for side B.  
FIFO A empty flag. EMPTYA is low when FIFO A is empty and high when FIFO A is not empty. EMPTYA is set low after  
FIFO A is reset.  
FIFO B empty flag. EMPTYB is low when FIFO B is empty and high when FIFO B is not empty. EMPTYB is set low after  
FIFO B is reset.  
EMPTYB  
O
FULLA  
FULLB  
GAB  
O
O
I
FIFO A full flag. FULLA is low when FIFO A is full and high when FIFO A is not full. FULLA is set high after FIFO A is reset.  
FIFO B full flag. FULLB is low when FIFO B is full and high when FIFO B is not full. FULLB is set high after FIFO B is reset.  
Port-B output enable. B0B17 outputs are active when GAB is high and in the high-impedance state when GAB is low.  
Port-A output enable. A0A17 outputs are active when GBA is high and in the high-impedance state when GBA is low.  
GBA  
I
FIFO A half-full flag. HFA is high when FIFO A contains 256 or more words and is low when FIFO A contains 255 or fewer  
words. HFA is set low after FIFO A is reset.  
HFA  
O
O
I
FIFO B half-full flag. HFB is high when FIFO B contains 256 or more words and is low when FIFO B contains 255 or fewer  
words. HFB is set low after FIFO B is reset.  
HFB  
FIFO A load clock. Data is written into FIFO A on a low-to-high transition of LDCKA when FULLA is high. The first word  
written into an empty FIFO A is sent directly to the FIFO A data outputs.  
LDCKA  
LDCKB  
PENA  
PENB  
FIFO B load clock. Data is written into FIFO B on a low-to-high transition of LDCKB when FULLB is high. The first word  
written into an empty FIFO B is sent directly to the FIFO B data outputs.  
I
FIFO A program enable. After reset and before a word is written into FIFO A, the binary value on A0A7 is latched as  
an AF/AEA offset value when PENA is low and LDCKA is high.  
I
FIFO B program enable. After reset and before a word is written into FIFO B, the binary value on B0B7 is latched as  
an AF/AEB offset value when PENB is low and LDCKB is high.  
I
RSTA  
RSTB  
I
I
FIFO A reset. A low level on RSTA resets FIFO A forcing EMPTYA low, HFA low, FULLA high, and AF/AEA high.  
FIFO B reset. A low level on RSTB resets FIFO B forcing EMPTYB low, HFB low, FULLB high, and AF/AEB high.  
Port-B read select. SAB selects the source of B0B17 read data. A low level selects real-time data from A0A17. A high  
level selects the FIFO A output.  
SAB  
SBA  
I
I
Port-A read select. SBA selects the source of A0A17 read data. A low level selects real-time data from B0 – B17. A high  
level selects the FIFO B output.  
UNCKA  
UNCKB  
I
I
FIFO A unload clock. Data is read from FIFO A on a low-to-high transition of UNCKA when EMPTYA is high.  
FIFO B unload clock. Data is read from FIFO B on a low-to-high transition of UNCKB when EMPTYB is high.  
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
RSTA  
1
0
PENA  
LDCKA  
Word  
1
Word  
129  
Word  
256  
Word  
384  
Word  
512  
Word  
2
Don’t Care  
A0 – A17  
UNCKA  
Word  
2
Word  
129  
Word  
130  
Word  
257  
Word  
258  
Word  
384  
Word  
385  
Word  
512  
Word 1  
Invalid  
Q0 – Q17  
EMPTYA  
FULLA  
HFA  
AF/AEA  
Set X = Y = 128  
Empty + X Half-Full Full – Y  
Full  
Full – Y  
Half-Full  
Empty + X  
Empty  
SAB = GAB = H, GBA = L  
Operation of FIFO B is identical to that of FIFO A.  
Figure 2. Timing Diagram for FIFO A  
SN74ABT7820  
512 × 18 × 2  
STROBED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS206D – AUGUST 1991 – REVISED APRIL 1998  
offset values for AF/AEFigure 2  
The AF/AE flag of each FIFO has two programmable limits: the almost-empty offset value (X) and the almost-full  
offset value (Y). The offsets of a flag can be programmed from the input of its FIFO after it is reset and before  
any data is written to its memory. An AF/AE flag is high when its FIFO contains X or fewer words or (512 – Y)  
or more words.  
To program the offset values for AF/AEA, program enable (PENA) can be brought low after FIFO A is reset and  
only when LDCKA is low. On the following low-to-high transition of LDCKA, the binary value on A0A7 is stored  
as the almost-empty offset value (X) and the almost-full offset value (Y). Holding PENA low for another  
low-to-high transition of LDCKA reprograms Y to the binary value on A0A7 at the time of the second LDCKA  
low-to-high transition.  
PENA can be brought back high only when LDCKA is low during the first two LDCKA cycles. PENA can be  
brought high at any time after the second LDCKA pulse returns low. A maximum value of 255 can be  
programmed for either X or Y (see Figure 3). To use the default values of X = Y = 128 for AF/AEA, PENA must  
be tied high. No data is stored in the FIFO when its AF/AE offsets are programmed. The AF/AEB flag is  
programmed in the same manner. PENB enables LDCKB to program the AF/AEB offset values taken from  
B0B7.  
RSTA  
LDCKA  
1
2
PENA  
X and Y  
Y
Word 1  
A0A17  
EMPTYA  
Figure 3. Programming X and Y Separately for AF/AEA  
9
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ABT7820  
512 × 18 × 2  
STROBED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS206D – AUGUST 1991 – REVISED APRIL 1998  
absolute maximum ratings over operating free-air temperature (unless otherwise noted)  
Supply voltage range, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to 7 V  
CC  
Input voltage range, V (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to V  
+ 0.5 V  
I
CC  
Voltage range applied to any output in the high state or power-off state, V  
. . . . . . . . . . . . . . 0.5 V to 5.5 V  
O
Current into any output in the low state, I  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 mA  
O
Input clamp current, I (V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 mA  
IK  
I
Output clamp current, I  
(V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
OK  
O
Package thermal impedance, θ (see Note 2): PH package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76°C/W  
JA  
PN package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W  
Storage temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C  
stg  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTES: 1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.  
2. The package thermal impedance is calculated in accordance with JESD 51.  
recommended operating conditions  
MIN NOM  
MAX  
UNIT  
V
V
V
V
V
Supply voltage  
4.5  
2
5
5.5  
CC  
High-level input voltage  
Low-level input voltage  
Input voltage  
V
IH  
0.8  
V
IL  
0
0
V
V
I
CC  
I
I
High-level output current  
Low-level output current  
Input transition rise or fall rate  
Operating free-air temperature  
–12  
24  
5
mA  
mA  
ns/V  
°C  
OH  
OL  
t/v  
T
A
70  
10  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ABT7820  
512 × 18 × 2  
STROBED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS206D – AUGUST 1991 – REVISED APRIL 1998  
electrical characteristics over recommended operating free-air temperature range (unless  
otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN TYP  
MAX  
UNIT  
V
V
V
V
V
V
V
V
V
V
V
V
= 4.5 V,  
= 4.5 V,  
= 5 V,  
I = – 18 mA  
–1.2  
V
IK  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
I
I
I
I
I
= – 3 mA  
= – 3 mA  
= – 12 mA  
= 24 mA  
2.5  
3
OH  
OH  
OH  
OL  
V
OH  
OL  
= 4.5 V,  
= 4.5 V,  
= 5.5 V,  
= 5.5 V,  
= 5.5 V,  
= 5.5 V,  
2
0.55  
±5  
V
I
I
I
I
V = V or GND  
I CC  
µA  
µA  
µA  
mA  
I
V
O
V
O
V
O
= 2.7 V  
= 0.5 V  
= 2.5 V  
50  
OZH  
–50  
–180  
15  
OZL  
§
–40  
–100  
O
Outputs high  
or GND Outputs low  
Outputs disabled  
I
V
CC  
= 5.5 V,  
I
O
= 0,  
V = V  
I CC  
95  
mA  
CC  
15  
C
Control inputs V = 2.5 V or 0.5 V  
6
pF  
i
I
C
C
Flags  
V
= 2.5 V or 0.5 V  
= 2.5 V or 0.5 V  
4
8
pF  
pF  
o
O
O
A or B ports  
V
io  
§
All typical values are at V  
= 5 V, T = 25°C.  
A
OZL  
CC  
The parameters I  
and I  
include the input leakage current.  
OZH  
Not more than one output should be tested at a time, and the duration of the test should not exceed one second.  
timing requirements over recommended operating free-air temperature range (unless otherwise  
noted) (see Figures 2 through 4)  
ABT7820-15  
ABT7820-20  
ABT7820-25  
ABT7820-30  
UNIT  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
f
Clock frequency  
LDCKA, LDCKB high  
67  
50  
40  
33  
MHz  
clock  
w
4
4
4
4
6
6
6
6
6
8
9
9
11  
11  
11  
11  
12  
LDCKA, LDCKB low  
UNCKA, UNCKB high  
UNCKA, UNCKB low  
RSTA, RSTB low  
Pulse  
duration  
t
9
ns  
ns  
ns  
9
10  
A0A17 before LDCKAand  
B0B17 before LDCKB↑  
3
5
3
0
2
3
4
5
3
0
2
3
4
5
4
0
2
4
4
5
4
0
2
4
PENA before LDCKAand  
PENB before LDCKB↑  
t
su  
Setup time  
LDCKA inactive before RSTA high  
and LDCKB inactive before RSTB high  
A0A17 after LDCKAand  
B0B17 after LDCKB↑  
PENA after LDCKA low and  
PENB after LDCKB low  
t
h
Hold time  
LDCKA inactive after RSTA high and  
LDCKB inactive after RSTB high  
11  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ABT7820  
512 × 18 × 2  
STROBED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS206D – AUGUST 1991 – REVISED APRIL 1998  
switching characteristics over recommended ranges of supply voltage and operating free-air  
temperature, C = 50 pF (unless otherwise noted) (see Figure 5)  
L
ACT7820-15  
ACT7820-20  
ACT7820-25  
ACT7820-30  
FROM  
(INPUT)  
TO  
(OUTPUT)  
PARAMETER  
UNIT  
MIN TYP  
MAX  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
f
LDCK, UNCK  
67  
50  
40  
33.3  
MHz  
max  
pd  
LDCKA,  
LDCKB↑  
4
14  
12  
4
4
15  
4
4
18  
15  
4
4
20  
17  
t
B/A  
B/A  
ns  
ns  
UNCKA,  
UNCKB↑  
4
4
9
8
13.5  
UNCKA,  
UNCKB↑  
t
t
pd  
LDCKA,  
LDCKB↑  
14  
4
15  
4
17  
4
19  
PLH  
EMPTYA,  
EMPTYB  
ns  
UNCKA,  
UNCKB↑  
t
t
t
4
6
6
6
8
8
8
2
13  
16  
13  
15  
20  
16  
16  
12  
4
6
6
6
8
8
8
2
14  
16  
14  
15  
20  
17  
17  
14  
4
6
6
6
8
8
8
2
16  
18  
16  
17  
22  
18  
18  
16  
4
6
6
6
8
8
8
2
18  
20  
18  
19  
22  
20  
20  
18  
PHL  
PHL  
PHL  
RSTA low,  
RSTB low  
EMPTYA,  
EMPTYB  
ns  
ns  
LDCKA,  
LDCKB↑  
FULLA,  
FULLB  
UNCKA,  
UNCKB↑  
FULLA,  
FULLB  
t
ns  
ns  
PLH  
pd  
RSTA low,  
RSTB low  
LDCKA,  
LDCKB↑  
AF/AEA,  
AF/AEB  
t
UNCKA,  
UNCKB↑  
RSTA low,  
RSTB low  
AF/AEA,  
AF/AEB  
t
t
ns  
ns  
PLH  
LDCKA,  
LDCKB↑  
HFA, HFB  
HFA, HFB  
B/A  
8
8
2
15  
15  
12  
8
8
2
15  
15  
14  
8
8
2
17  
17  
16  
8
8
2
19  
19  
18  
PLH  
UNCKA, UNCKB  
t
ns  
RSTA low,  
RSTB low  
PHL  
pd  
§
SAB/SBA  
2
2
2
2
10  
9
2
2
2
2
11  
10  
8
2
2
2
2
12  
11  
10  
13  
2
2
2
2
14  
13  
12  
14  
t
ns  
A/B  
t
t
GBA/GAB  
GBA/GAB  
A/B  
A/B  
6.5  
11  
ns  
ns  
en  
12  
dis  
§
All typical values are at 5 V, T = 25°C.  
This parameter is measured with a 30-pF load (see Figure 5).  
These parameters are measured with the internal output state of the storage register opposite that of the bus input.  
A
12  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ABT7820  
512 × 18 × 2  
STROBED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS206D – AUGUST 1991 – REVISED APRIL 1998  
PARAMETER MEASUREMENT INFORMATION  
7 V  
PARAMETER  
S1  
S1  
t
Open  
Closed  
Open  
PZH  
t
t
t
en  
dis  
pd  
t
500 Ω  
PZL  
t
PHZ  
From Output  
Under Test  
Test  
Point  
t
Closed  
Open  
PLZ  
PLH  
PHL  
t
t
C
= 50 pF  
Open  
500 Ω  
L
(see Note A)  
LOAD CIRCUIT  
t
w
3 V  
0 V  
Input  
1.5 V  
1.5 V  
3 V  
0 V  
Timing  
Input  
1.5 V  
VOLTAGE WAVEFORMS  
PULSE DURATION  
t
su  
t
h
3 V  
0 V  
Data  
Input  
3 V  
0 V  
1.5 V  
1.5 V  
Output  
Control  
1.5 V  
1.5 V  
VOLTAGE WAVEFORMS  
SETUP AND HOLD TIMES  
t
PZL  
t
PLZ  
3.5 V  
Output  
Waveform 1  
S1 at 7 V  
3 V  
0 V  
1.5 V  
Input  
1.5 V  
1.5 V  
V
+ 0.3 V  
– 0.3 V  
OL  
V
OL  
OH  
t
PHZ  
t
PLH  
t
PZH  
t
PHL  
V
Output  
Waveform 2  
S1 at Open  
V
OH  
V
OH  
1.5 V  
Output  
1.5 V  
1.5 V  
0 V  
V
OL  
VOLTAGE WAVEFORMS  
VOLTAGE WAVEFORMS  
PROPAGATION DELAY TIMES  
ENABLE AND DISABLE TIMES  
NOTE A: C includes probe and jig capacitance.  
L
Figure 4. Load Circuit and Voltage Waveforms  
13  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ABT7820  
512 × 18 × 2  
STROBED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS206D – AUGUST 1991 – REVISED APRIL 1998  
TYPICAL CHARACTERISTICS  
PROPAGATION DELAY TIME  
vs  
LOAD CAPACITANCE  
V
= 5 V  
= 25°C  
= 500 Ω  
CC  
T
A
typ + 6  
typ + 4  
R
L
typ + 2  
typ  
typ – 2  
0
50  
100  
150  
200  
250  
300  
C
– Load Capacitance – pF  
L
Figure 5  
SUPPLY CURRENT  
vs  
CLOCK FREQUENCY  
160  
140  
T
C
= 75°C  
= 0 pF  
A
L
V
CC  
= 5.5 V  
120  
100  
80  
V
CC  
= 5 V  
V
CC  
= 4.5 V  
60  
40  
20  
10 15 20 25 30 35 40 45 50 55 60 65 70  
f
– Clock Frequency – MHz  
clock  
Figure 6  
14  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
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pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO  
BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
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party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.  
Copyright 1999, Texas Instruments Incorporated  

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