SN74ACT2235 [TI]

1024 】 9 】 2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY; 1024 】 9 】 2异步双向先入先出存储器
SN74ACT2235
型号: SN74ACT2235
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

1024 】 9 】 2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
1024 】 9 】 2异步双向先入先出存储器

存储
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中文:  中文翻译
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SN74ACT2235  
1024 × 9 × 2  
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998  
Independent Asynchronous Inputs and  
Outputs  
Access Times of 25 ns With a 50-pF Load  
Data Rates up to 50 MHz  
Low-Power Advanced CMOS Technology  
Bidirectional  
Fall-Through Times of 22 ns Maximum  
High Output Drive for Direct Bus Interface  
Dual 1024 by 9 Bits  
Package Options Include 44-Pin Plastic  
Leaded Chip Carriers (FN) and 64-Pin Thin  
Quad Flat (PAG, PM) Packages  
Programmable Almost-Full/Almost-Empty  
Flag  
Empty, Full, and Half-Full Flags  
description  
A FIFO memory is a storage device that allows data to be written into and read from its array at independent  
data rates. The SN74ACT2235 is arranged as two 1024 by 9-bit FIFOs for high speed and fast access times.  
It processes data at rates up to 50 MHz, with access times of 25 ns in a bit-parallel format.  
The SN74ACT2235 consists of bus-transceiver circuits, two 1024 × 9 FIFOs, and control circuitry arranged for  
multiplexed transmission of data directly from the data bus or from the internal FIFO memories. Enable (GAB  
and GBA) inputs are provided to control the transceiver functions. The select-control (SAB and SBA) inputs are  
provided to select whether real-time or stored data is transferred. The circuitry used for select control eliminates  
the typical decoding glitch that occurs in a multiplexer during the transition between stored and real-time data.  
Figure 2 shows the eight fundamental bus-management functions that can be performed with the  
SN74ACT2235.  
For more information on this device family, see the application report, 1K × 9 × 2 Asynchronous FIFO  
SN74ACT2235, literature number SCAA010.  
The SN74ACT2235 is characterized for operation from 0°C to 70°C.  
FN PACKAGE  
(TOP VIEW)  
6 5  
4
3
2
1 44 43 42 41 40  
39  
B2  
B3  
B4  
V
B5  
B6  
B7  
B8  
GND  
AF/AEB  
HFB  
A3  
A4  
7
8
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
V
9
CC  
A5  
10  
11  
12  
13  
14  
15  
16  
17  
CC  
A6  
A7  
A8  
GND  
AF/AEA  
HFA  
LDCKA  
18 19 20 21 22 23 24 25 26 27 28  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2235  
1024 × 9 × 2  
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998  
PAG OR PM PACKAGE  
(TOP VIEW)  
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49  
V
V
NC  
V
1
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
CC  
A3  
2
CC  
A4  
B3  
3
B4  
4
CC  
GND  
GND  
A5  
GND  
GND  
5
6
V
7
CC  
A6  
B5  
B6  
8
V
9
CC  
V
V
10  
11  
12  
13  
14  
15  
16  
CC  
A7  
CC  
B7  
A8  
B8  
GND  
GND  
GND  
AF/AEB  
HFB  
GND  
AF/AEA  
HFA  
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32  
NC – No internal connection  
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2235  
1024 × 9 × 2  
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998  
logic symbol  
Φ
FIFO  
1024 × 9 × 2  
SN74ACT2235  
44  
1
SAB  
SBA  
1
MODE  
0
43  
2
GAB  
EN1  
GBA  
EN2  
22  
21  
17  
23  
RSTA  
DAF  
Reset A  
RESET B  
DEF B FLAG  
LDCKB  
RSTB  
DBF  
24  
28  
19  
27  
20  
30  
DEF A FLAG  
LDCKA  
LDCKB  
LDCKA  
26  
18  
25  
15  
UNCKA  
FULLA  
UNCKB  
FULLB  
UNCKB  
FULL B  
UNCKA  
FULLA  
EMPTYA  
AF/AEA  
EMPTYA  
EMPTYB  
EMPTYB  
AF/AEB  
ALMOST-FULL/  
ALMOST-EMPTY A  
ALMOST-FULL/  
ALMOST-EMPTY A  
HALF-FULL B  
16  
29  
HFA  
HALF-FULL A  
HFB  
41  
4
0
B0  
A0  
0
5
40  
39  
38  
37  
35  
34  
33  
32  
B1  
B2  
B3  
B4  
B5  
B6  
B7  
B8  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
6
7
A Data  
B Data  
8
10  
11  
12  
13  
8
8
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.  
Pin numbers shown are for the FN package.  
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2235  
1024 × 9 × 2  
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998  
logic diagram (positive logic)  
SAB  
SBA  
Φ
FIFO B  
1024 × 9  
HFB  
RSTB  
DBF  
AF/AEB  
EMPTYB  
UNCKB  
FULLB  
LDCKB  
B0  
Q
D
GBA  
One of Nine Channels  
To Other Channels  
GAB  
Φ
FIFO A  
1024 × 9  
RSTA  
DAF  
HFA  
AF/AEA  
EMPTYA  
UNCKA  
FULLA  
LDCKA  
Q
D
A0  
One of Nine Channels  
To Other Channels  
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2235  
1024 × 9 × 2  
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998  
Terminal Functions  
TERMINAL  
I/O  
DESCRIPTION  
NAME  
NO.  
Almost full/almost empty flags. The almost-full/almost-empty A flag (AF/AEA) is defined by the  
almost-full/almost-emptyoffset value for FIFO A (X). AF/AEA is high when FIFO A contains X or fewer words  
or 1024–X words. AF/AEA is low when FIFO A contains between (X + 1) or (1023 – X) words. The operation  
of the almost-full/almost-empty B flag (AF/AEB) is the same as AF/AEA for FIFO B.  
AF/AEA  
AF/AEB  
15  
30  
O
4–8,  
10–13  
A0–A8  
B0–B8  
I/O  
I/O  
A-data inputs and outputs  
B-data inputs and outputs  
32–35,  
37–41  
Define-flag inputs. The high-to-low transition of DAF stores the binary value on A0–A8 as the  
almost-full/almost-emptyoffset value for FIFO A (X). The high-to-low transition of DBF stores the binary value  
of B0–B8 as the almost-full/almost-empty offset value for FIFO B (Y).  
DAF  
DBF  
21  
24  
I
EMPTYA  
EMPTYB  
20  
25  
Empty flags. EMPTYA and EMPTYB are low when their corresponding memories are empty and high when  
they are not empty.  
O
O
O
FULLA  
FULLB  
18  
27  
Full flags. FULLA and FULLB are low when their corresponding memories are full and high when they are  
not full.  
HFA  
HFB  
16  
29  
Half-full flags. HFA and HFB are high when their corresponding memories contain 512 or more words and  
low when they contain 511 or fewer words.  
Load clocks. Data on A0–A8 is written into FIFO A on a low-to-high transition of LDCKA. Data on B0–B8 is  
written into FIFO B on a low-to-high transition of LDCKB. When the FIFOs are full, LDCKA and LDCKB have  
no effect on the data residing in memory.  
LDCKA  
LDCKB  
17  
28  
I
GAB  
GBA  
2
43  
Output enables. GAB, GBA control the transceiver functions. When GBA is low, A0–A8 are in the  
high-impedance state. When GAB is low, B0–B8 are in the high-impedance state.  
I
I
RSTA  
RSTB  
22  
23  
Reset. A reset is accomplished in each direction by taking RSTA and RSTB low. This sets EMPTYA,  
EMPTYB, FULLA, FULLB, and AF/AEB high. Both FIFOs must be reset upon power up.  
Select-control inputs. SAB and SBA select whether real-time or stored data is transferred. A low level selects  
real-time data and a high level selects stored data. Eight fundamental bus-management functions can be  
performed as shown in Figure 2.  
SAB  
SBA  
1
44  
I
I
Unload clocks. Data in FIFO A is read to B0–B8 on a low-to-high transition of UNCKB. Data in FIFO B is read  
to A0–A8 on a low-to-high transition of UNCKB. When the FIFOs are empty, UNCKA and UNCKB have no  
effect on data residing in memory.  
UNCKA  
UNCKB  
19  
26  
Terminals listed are for the FN package.  
programming procedure for AF/AEA  
The almost-full/almost-empty flags (AF/AEA, AF/AEB) are programmed during each reset cycle. The  
almost-full/almost-empty offset value for FIFO A (X) and for FIFO B (Y) is either a user-defined value or the  
default values of X = 256 and Y = 256. Below are instructions to program AF/AEA using both methods. AF/AEB  
is programmed in the same manner for FIFO B.  
user-defined X  
Take DAF from high to low. This stores A0–A8 as X.  
If RSTA is not already low, take RSTA low.  
With DAF held low, take RSTA high. This defines AF/AEA using X.  
To retain the current offset for the next reset, keep DAF low.  
default X  
To redefine AF/AE using the default value of X = 256, hold DAF high during the reset cycle.Figure 1  
5
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
RSTA  
Don’t Care  
DAF  
LDCKA  
Word  
1
Word  
2
Word  
257  
Word  
512  
Word  
768  
Word  
1024  
Don’t Care  
A0–A8  
X
UNCKA  
Word Word Word Word Word Word  
Word Word  
769 1024  
Word  
1024  
Invalid  
Invalid  
Word 1  
Q0–Q8  
2
257  
258  
513  
514  
768  
EMPTYA  
FULLA  
HFA  
AF/AEA  
Set Flag to  
Empty + X/Full – X  
Set Flag to Empty + 256/  
Full – 256 (default)  
Empty + 256  
Full – 256  
Full – 256  
Half Full  
Empty + 256  
Empty  
Load X into  
Flag Register  
Half Full  
Full  
511)  
(0  
X
Operation of FIFO B is identical to that of FIFO A.  
Last valid data stays on outputs when FIFO goes empty due to a read.  
Figure 1. Timing Diagram for FIFO A  
SN74ACT2235  
1024 × 9 × 2  
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998  
FIFO A  
Out  
FIFO A  
Out  
In  
In  
Bus A  
Bus B  
Bus B  
Bus B  
Bus A  
Bus A  
Bus A  
Bus A  
Bus B  
FIFO B  
Out  
FIFO B  
Out  
In  
In  
SAB SBA GAB GBA  
SAB SBA GAB GBA  
L
X
H
L
X
X
L
L
FIFO A  
FIFO A  
In  
Out  
In  
Out  
Bus A  
Bus B  
FIFO B  
Out  
FIFO B  
Out  
In  
In  
SAB SBA GAB GBA  
SAB SBA GAB GBA  
X
L
L
H
H
L
H
H
FIFO A  
FIFO A  
Out  
In  
Out  
In  
Bus A  
Bus B  
FIFO B  
Out  
FIFO B  
Out  
In  
In  
SAB SBA GAB GBA  
SAB SBA GAB GBA  
H
X
H
L
L
H
H
H
FIFO A  
FIFO A  
In Out  
In  
Out  
Bus B  
Bus A  
Bus B  
FIFO B  
Out  
FIFO B  
Out  
In  
In  
SAB SBA GAB GBA  
SAB SBA GAB GBA  
X
H
L
H
H
H
H
H
Figure 2. Bus-Management Functions  
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2235  
1024 × 9 × 2  
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998  
SELECT-MODE CONTROL  
CONTROL  
OPERATION  
SAB  
L
SBA  
L
A BUS  
B BUS  
Real-time B to A bus  
FIFO B to A bus  
Real-time A to B bus  
Real-time A to B bus  
FIFO A to B bus  
FIFO A to B bus  
L
H
H
L
Real-time B to A bus  
FIFO B to A bus  
H
H
OUTPUT-ENABLE CONTROL  
OPERATION  
CONTROL  
GAB  
GBA  
A BUS  
B BUS  
H
L
H
H
L
A bus enabled  
A bus enabled  
B bus enabled  
Isolation/input to B bus  
B bus enabled  
H
L
Isolation/input to A bus  
L
Isolation/input to A bus Isolation/input to B bus  
Figure 2. Bus-Management Functions (Continued)  
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)  
Supply voltage range, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V  
CC  
Input voltage range, V : Control inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V  
I
I/O ports . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 5.5 V  
Voltage range applied to a disabled 3-state output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V  
Package thermal impedance, θ (see Note 1): FN package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46°C/W  
JA  
PAG package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58°C/W  
PM package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67°C/W  
Storage temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C  
stg  
Maximum junction temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C  
J
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTE 1: The package thermal impedance is calculated in accordance with JESD 51.  
recommended operating conditions  
ACT2235-20  
ACT2235-30  
ACT2235-40  
ACT2235-60  
UNIT  
MIN  
4.5  
2
MAX  
MIN  
4.5  
2
MAX  
MIN  
4.5  
2
MAX  
MIN  
4.5  
2
MAX  
V
CC  
V
IH  
V
IL  
Supply voltage  
5.5  
5.5  
5.5  
5.5  
V
V
V
High-level input voltage  
Low-level input voltage  
0.8  
–8  
–8  
16  
8
0.8  
–8  
–8  
16  
8
0.8  
–8  
–8  
16  
8
0.8  
–8  
–8  
16  
8
A or B ports  
Status flags  
A or B ports  
Status flags  
I
High-level output current  
mA  
OH  
OL  
I
Low-level output current  
mA  
T
A
Operating free-air temperature  
0
70  
0
70  
0
70  
0
70  
°C  
8
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2235  
1024 × 9 × 2  
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998  
electrical characteristics over recommended operating free-air temperature range (unless  
otherwise noted)  
PARAMETER  
TEST CONDITIONS  
= –8 mA  
MIN TYP  
MAX  
UNIT  
V
V
V
V
V
V
V
= 4.5 V,  
= 4.5 V,  
= 4.5 V,  
= 5.5 V,  
= 5.5 V,  
I
I
I
2.4  
V
OH  
CC  
CC  
CC  
CC  
CC  
OH  
OL  
OL  
Flags  
= 8 mA  
0.5  
0.5  
±5  
V
OL  
I/O ports  
= 16 mA  
I
I
I
V = V  
or 0  
µA  
µA  
µA  
mA  
pF  
pF  
I
I
CC  
= V or 0  
CC  
V
±5  
OZ  
CC  
O
V = V  
I
– 0.2 V or 0  
CC  
= 5.5 V,  
10  
400  
1
§
I  
V
One input at 3.4 V,  
f = 1 MHz  
Other inputs at V or GND  
CC  
CC  
CC  
V = 0,  
C
C
4
8
i
I
V
O
= 0,  
f = 1 MHz  
o
§
All typical values are at V  
= 5 V, T = 25°C.  
A
CC  
I
is tested with outputs open.  
CC  
This is the supply current when each input is at one of the specified TTL voltage levels rather than 0 V or V  
.
CC  
timing requirements over recommended operating conditions (unless otherwise noted) (see  
Figure 3)  
’ACT2235-20 ’ACT2235-30 ’ACT2235-40 ’ACT2235-60  
UNIT  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
16.7  
16.7  
LDCKA or LDCKB  
50  
33  
25  
f
Clock frequency  
Pulse duration  
MHz  
ns  
clock  
UNCKA or UNCKB  
RSTA or RSTB low  
LDCKA or LDCKB low  
LDCKA or LDCKB high  
UNCKA or UNCKB low  
UNCKA or UNCKB high  
DAF or DBF high  
50  
33  
25  
20  
8
20  
10  
10  
10  
10  
10  
25  
14  
14  
14  
14  
10  
25  
20  
20  
20  
20  
10  
8
t
w
8
8
10  
Data before LDCKA  
or LDCKB↑  
4
5
7
4
5
7
5
5
7
5
5
7
Define AF/AE:  
D0–D8 before DAF or DBF↓  
Define AF/AE: DAF or DBF↓  
before RSTA or RSTB↑  
t
su  
Setup time  
ns  
Define AF/AE (default):  
DAF or DBF high before  
RSTA or RSTB↑  
5
5
5
5
RSTA or RSTB inactive (high)  
before LDCKA or LDCKB↑  
5
1
0
5
1
0
5
2
0
5
2
0
Data after LDCKA or LDCKB↑  
Define AF/AE: D0–D8  
after DAF or DBF↓  
Define AF/AE: DAF or DBF low  
after RSTA or RSTB↑  
t
h
Hold time  
ns  
0
0
0
0
0
0
0
0
Define AF/AE (default):  
DAF or DBF high after  
RSTA or RSTB↑  
9
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2235  
1024 × 9 × 2  
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998  
switching characteristics over recommended ranges of supply voltage and operating free-air  
temperature, C = 50 pF (unless otherwise noted) (see Figure 3)  
L
’ACT2235-20  
’ACT2235-30 ’ACT2235-40 ’ACT2235-60  
FROM  
(INPUT)  
TO  
(OUTPUT)  
PARAMETER  
UNIT  
MIN TYP  
MAX  
MIN  
33  
MAX  
MIN  
25  
MAX  
MIN  
16.7  
16.7  
MAX  
LDCK  
UNCK  
50  
50  
f
MHz  
max  
33  
25  
LDCK,  
LDCKB↑  
8
22  
25  
15  
8
12  
4
22  
25  
15  
8
12  
4
24  
35  
17  
8
12  
4
26  
45  
19  
t
B or A  
ns  
ns  
pd  
UNCKA,  
UNCKB↑  
12  
4
17  
LDCK,  
LDCKB↑  
EMPTYA,  
EMPTYB  
t
PLH  
UNCKA,  
UNCKB↑  
2
2
4
17  
18  
15  
2
2
4
17  
18  
15  
2
2
4
19  
20  
17  
2
2
4
21  
22  
19  
EMPTYA,  
EMPTYB  
RSTA, RSTB↓  
t
t
ns  
ns  
PHL  
LDCK,  
LDCKB↑  
FULLA, FULLB  
UNCKA,  
UNCKB↑  
4
2
2
15  
15  
15  
4
2
2
15  
15  
15  
4
2
2
17  
17  
17  
4
2
2
19  
19  
19  
FULLA, FULLB  
FULLA, FULLB  
RSTA, RSTB↓  
AF/AEA,  
AF/AEB  
PLH  
LDCK,  
LDCKB↑  
HFA, HFB  
HFA, HFB  
B or A  
2
4
15  
18  
2
4
15  
18  
2
4
17  
20  
2
4
19  
22  
UNCKA,  
UNCKB↑  
t
t
ns  
ns  
PHL  
RSTA, RSTB↓  
1
1
1
15  
11  
11  
1
1
1
15  
11  
11  
1
1
1
17  
12  
12  
1
1
1
19  
14  
14  
SAB or SBA  
A or B  
LDCK,  
LDCKB↑  
2
2
18  
18  
2
2
18  
18  
2
2
20  
20  
2
2
22  
22  
pd  
AF/AEA,  
AF/AEB  
UNCKA,  
UNCKB↑  
t
t
GBA or GAB  
GBA or GAB  
A or B  
A or B  
2
1
11  
9
2
1
11  
9
2
1
13  
11  
2
1
15  
13  
ns  
ns  
en  
dis  
All typical values are at V  
= 5 V, T = 25°C.  
A
CC  
These parameters are measured with the internal output state of the storage register opposite that of the bus input.  
operating characteristics, V  
= 5 V, T = 25°C  
A
CC  
PARAMETER  
TEST CONDITIONS  
= 50 pF, f = 5 MHz  
L
TYP  
71  
UNIT  
Outputs enabled  
Outputs disabled  
C
Power dissipation capacitance per 1K bits  
C
pF  
pd  
57  
10  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2235  
1024 × 9 × 2  
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998  
PARAMETER MEASUREMENT INFORMATION  
7 V  
PARAMETER  
S1  
S1  
t
Open  
Closed  
Open  
PZH  
t
t
t
en  
dis  
pd  
500 Ω  
t
PZL  
t
PHZ  
From Output  
Under Test  
Test  
Point  
t
Closed  
Open  
PLZ  
PLH  
PHL  
t
t
C
= 50 pF  
L
Open  
(see Note A)  
500 Ω  
t
w
LOAD CIRCUIT  
3 V  
0 V  
Input  
1.5 V  
1.5 V  
3 V  
0 V  
Timing  
Input  
1.5 V  
VOLTAGE WAVEFORMS  
PULSE DURATION  
t
su  
t
h
3 V  
0 V  
3 V  
Data  
Input  
1.5 V  
1.5 V  
Output  
Control  
1.5 V  
1.5 V  
0 V  
VOLTAGE WAVEFORMS  
SETUP AND HOLD TIMES  
t
PZL  
t
PLZ  
3.5 V  
Output  
Waveform 1  
S1 at 7 V  
3 V  
0 V  
1.5 V  
Input  
1.5 V  
1.5 V  
V
OL  
+ 0.3 V  
V
OL  
t
PHZ  
t
PLH  
t
PZH  
t
PHL  
V
Output  
Waveform 2  
S1 at Open  
OH  
V
V
V
OH  
– 0.3 V  
OH  
1.5 V  
Output  
1.5 V  
1.5 V  
0 V  
OL  
VOLTAGE WAVEFORMS  
VOLTAGE WAVEFORMS  
PROPAGATION DELAY TIMES  
ENABLE AND DISABLE TIMES  
NOTE A: C includes probe and jig capacitance.  
L
Figure 3. Load Circuit and Voltage Waveforms  
11  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2235  
1024 × 9 × 2  
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY  
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998  
TYPICAL CHARACTERISTICS  
POWER-DISSIPATION CAPACITANCE  
PROPAGATION DELAY TIME  
vs  
vs  
SUPPLY VOLTAGE  
LOAD CAPACITANCE  
typ + 2  
typ + 1  
typ  
typ + 8  
typ + 6  
typ + 4  
typ + 2  
typ  
V
= 5 V  
CC  
f = 5 MHz  
V
= 5 V  
= 25°C  
= 500 Ω  
CC  
i
T
A
T
= 25°C  
A
R
L
typ – 1  
typ – 2  
typ – 3  
typ – 2  
4.5 4.6 4.7 4.8 4.9  
5
5.1 5.2 5.3 5.4 5.5  
0
50  
C
100  
150  
200  
250  
300  
V
CC  
– Supply Voltage – V  
– Load Capacitance – pF  
L
Figure 4  
Figure 5  
12  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO  
BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
semiconductor products or services might be or are used. TI’s publication of information regarding any third  
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.  
Copyright 1999, Texas Instruments Incorporated  

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