SN74ACT7203L-25DV [TI]

2KX9 OTHER FIFO, 25ns, PDSO28;
SN74ACT7203L-25DV
型号: SN74ACT7203L-25DV
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

2KX9 OTHER FIFO, 25ns, PDSO28

时钟 先进先出芯片 光电二极管 内存集成电路
文件: 总22页 (文件大小:292K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
DV OR NP PACKAGE  
Reads and Writes Can Be Asynchronous  
or Coincident  
(TOP VIEW)  
Organization:  
W
D8  
D3  
D2  
D1  
D0  
XI  
V
CC  
D4  
1
2
3
4
5
6
7
8
9
28  
27  
26  
25  
24  
23  
22  
21  
20  
– SN74ACT7203L – 2048 × 9  
– SN74ACT7204L – 4096 × 9  
– SN74ACT7205L – 8192 × 9  
– SN74ACT7206L – 16383 × 9  
D5  
D6  
D7  
FL/RT  
RS  
Fast Data Access Times of 15 ns  
Read and Write Frequencies up to 40 MHz  
Bit-Width and Word-Depth Expansion  
Fully Compatible With the IDT7203/7204  
Retransmit Capability  
FF  
Q0  
EF  
XO/HF  
Q1 10  
19 Q7  
Q2  
Q3  
Q6  
Q5  
11  
12  
18  
17  
Empty, Full, and Half-Full Flags  
TTL-Compatible Inputs  
Q8 13  
16 Q4  
15  
GND 14  
R
Available in 28-Pin Plastic DIP (NP), Plastic  
Small-Outline (DV), and 32-Pin Plastic  
J-Leaded Chip-Carrier (RJ) Packages  
RJ PACKAGE  
(TOP VIEW)  
description  
These devices are constructed with dual-port  
SRAM and have internal write and read address  
counters to provide data throughput on a first-in,  
first-out (FIFO) basis. Write and read operations  
are independent and can be asynchronous or  
coincident. Empty and full status flags prevent  
underflow and overflow of memory, and  
depth-expansion logic allows combining the  
storage cells of two or more devices into one  
FIFO. Word-width expansion is also possible.  
4
3
2
1
32 31 30  
29  
5
6
7
8
9
D2  
D1  
D0  
XI  
D6  
D7  
NC  
FL/RT  
RS  
28  
27  
26  
25  
FF  
Q0 10  
24 EF  
Q1  
NC  
Q2  
XO/HF  
Q7  
Q6  
11  
12  
13  
23  
22  
21  
Data is loaded into memory by the write-enable  
(W) input and unloaded by the read-enable (R)  
input. Read and write cycle times of 25 ns  
(40 MHz) are possible with data access times of  
15 ns.  
14 15 16 17 18 19 20  
NC – No internal connection  
These devices are particularly suited for providing a data channel between two buses operating at  
asynchronous rates. Applications include use as rate buffers from analog-to-digital converters in  
data-acquisition systems, temporary storage elements between buses and magnetic or optical memories, and  
queues for communication systems. A 9-bit-wide data path is provided for the transmission of byte data plus  
a parity bit or packet-framing information. The read pointer can be reset independently of the write pointer for  
retransmitting previously read data when a device is not used in depth expansion.  
The SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, and SN74ACT7206L are characterized for operation  
from 0°C to 70°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1995, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
SN74ACT7203L logic symbol  
FIFO 2048 × 9  
Φ
SN74ACT7203L  
22  
2,4 CT = 0 (RST)  
RS  
W
8
1
2(CT = 2047) G6  
4(CT = 2047) G6  
(CT = 2048) G6  
FF  
6 (WR PNTR)  
6 C1  
G2  
7
21  
20  
(EXPAND)  
XI  
(CT = 0) G5  
EF  
23  
(1ST LOAD)  
2,4 (REXMIT)  
FL/RT  
XO/HF  
(EXPAND)  
CT > 1024  
15  
5 (RD PNTR)  
R
5EN3  
G4  
(CT = WR PNTR – RD PNTR)  
6
9
10  
11  
12  
16  
17  
18  
19  
13  
D0  
D1  
D2  
D3  
D4  
D5  
D6  
D7  
D8  
1D  
3
Q0  
Q1  
Q2  
Q3  
Q4  
Q5  
Q6  
Q7  
Q8  
5
4
3
27  
26  
25  
24  
2
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.  
Pin numbers shown are for the DV and NP packages.  
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
SN74ACT7204L logic symbol  
FIFO 4096 × 9  
Φ
SN74ACT7204L  
22  
1
2,4 CT = 0 (RST)  
RS  
W
8
2(CT = 4095) G6  
4(CT = 4095) G6  
(CT = 4096) G6  
FF  
6 (WR PNTR)  
6 C1  
G2  
7
21  
20  
(EXPAND)  
XI  
(CT = 0) G5  
EF  
23  
(1ST LOAD)  
2,4 (REXMIT)  
FL/RT  
XO/HF  
(EXPAND)  
CT > 2048  
15  
5 (RD PNTR)  
R
5EN3  
G4  
(CT = WR PNTR – RD PNTR)  
6
9
10  
11  
12  
16  
17  
18  
19  
13  
D0  
D1  
D2  
D3  
D4  
D5  
D6  
D7  
D8  
1D  
3
Q0  
Q1  
Q2  
Q3  
Q4  
Q5  
Q6  
Q7  
Q8  
5
4
3
27  
26  
25  
24  
2
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.  
Pin numbers shown are for the DV and NP packages.  
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
SN74ACT7205L logic symbol  
FIFO 8192 × 9  
Φ
SN74ACT7205L  
22  
2,4 CT = 0 (RST)  
RS  
W
8
1
2(CT = 8191) G6  
4(CT = 8191) G6  
(CT = 8192) G6  
FF  
6 (WR PNTR)  
6 C1  
G2  
7
21  
20  
(EXPAND)  
XI  
(CT = 0) G5  
EF  
23  
(1ST LOAD)  
2,4 (REXMIT)  
FL/RT  
XO/HF  
(EXPAND)  
CT > 4096  
15  
5 (RD PNTR)  
R
5EN3  
G4  
(CT = WR PNTR – RD PNTR)  
6
9
10  
11  
12  
16  
17  
18  
19  
13  
D0  
D1  
D2  
D3  
D4  
D5  
D6  
D7  
D8  
1D  
3
Q0  
Q1  
Q2  
Q3  
Q4  
Q5  
Q6  
Q7  
Q8  
5
4
3
27  
26  
25  
24  
2
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.  
Pin numbers shown are for the DV and NP packages.  
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
SN74ACT7206L logic symbol  
FIFO 16384 × 9  
Φ
SN74ACT7206L  
22  
1
2,4 CT = 0 (RST)  
RS  
W
8
2(CT = 16383) G6  
4(CT = 16383) G6  
(CT = 16384) G6  
FF  
6 (WR PNTR)  
6 C1  
G2  
7
21  
20  
(EXPAND)  
XI  
(CT = 0) G5  
EF  
23  
(1ST LOAD)  
2,4 (REXMIT)  
FL/RT  
XO/HF  
(EXPAND)  
CT > 8192  
15  
5 (RD PNTR)  
R
5EN3  
G4  
(CT = WR PNTR – RD PNTR)  
6
9
10  
11  
12  
16  
17  
18  
19  
13  
D0  
D1  
D2  
D3  
D4  
D5  
D6  
D7  
D8  
1D  
3
Q0  
Q1  
Q2  
Q3  
Q4  
Q5  
Q6  
Q7  
Q8  
5
4
3
27  
26  
25  
24  
2
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.  
Pin numbers shown are for the DV and NP packages.  
5
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
functional block diagram  
9
D0D8  
W
Location 1  
Location 2  
2048 × 9 or  
4096 × 9 or  
8192 × 9 or  
16384 × 9  
Write  
Control  
Write  
Pointer  
Read  
Pointer  
RAM  
9
Q0Q8  
RS  
Reset  
Logic  
FL/RT  
Status-  
Flag  
Logic  
FF  
EF  
Read  
Control  
R
Expansion  
Logic  
XO/HF  
XI  
2048 × 9 for SN74ACT7203L; 4096 × 9 for SN74ACT7204L; 8192 × 9 for SN74ACT7205L; 16384 × 9 for SN74ACT7206L  
RESET AND RETRANSMIT FUNCTION TABLE  
(single-device depth; single-or multiple-device width)  
INPUTS  
INTERNAL TO DEVICE  
OUTPUTS  
FUNCTION  
RS  
L
FL/RT  
XI  
L
READ POINTER  
WRITE POINTER  
Location zero  
Unchanged  
EF  
L
FF  
H
XO/HF  
X
L
Location zero  
Location zero  
H
X
X
Reset device  
Retransmit  
Read/write  
H
L
X
X
H
H
L
Increment if EF high Increment if FF high  
X
X
RESET AND FIRST-LOAD FUNCTION TABLE  
(multiple-device depth; single-or multiple-device width)  
INPUTS  
INTERNAL TO DEVICE  
OUTPUTS  
EF FF  
FUNCTION  
RS  
L
FL/RT  
XI  
READ POINTER  
WRITE POINTER  
Location zero  
Location zero  
X
L
H
X
Location zero  
Location zero  
X
L
L
H
H
X
Reset first device  
Reset all other devices  
Read/write  
L
H
X
XI is connected to XO/HF of the previous device in the daisy chain (see Figure 15).  
6
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
Terminal Functions  
TERMINAL  
NAME  
I/O  
DESCRIPTION  
D0D8  
I
Data inputs  
Empty-flag output. EF is low when the read pointer is equal to the write pointer, inhibiting any operation initiated by a read  
cycle. When the FIFO is empty, a data word can be read automatically at Q0Q8 by holding R low when loading the data  
word with a low-level pulse on W.  
EF  
O
O
Full-flag output. FF is low when the write pointer is one location less than the read pointer, indicating that the device is  
full and inhibiting any operation initiated by a write cycle. FF goes low when the number of writes after reset exceeds the  
number of reads by 2048 for the SN74ACT7203L, 4096 for the SN74ACT7204L, 8192 for the SN74ACT7205L, and  
16384 for the SN74ACT7206L. When the FIFO is full, a data word can be written automatically into memory by holding  
W low while reading out another data word with a low-level pulse on R.  
FF  
First-load/retransmitinput. FL/RT performs two separate functions. When cascading two or more devices for word-depth  
expansion, FL/RT is tied to ground on the first device in the daisy chain to indicate that it is the first device loaded and  
unloaded; it is tied high on all other devices in the depth-expansion chain.  
A device is not used in depth expansion when its expansion-in (XI) input is tied to ground. In that case, FL/RT acts as  
a retransmit enable. A retransmit operation is initiated when FL/RT is pulsed low. This sets the internal read pointer to  
the first location and does not affect the write pointer. R and W must be at a high logic level during the low-level FL/RT  
retransmit pulse. Retransmit should be used only when less than 2048/4096 writes are performed between resets;  
otherwise, an attempt to retransmit can cause the loss of unread data. The retransmit function can affect XO/HF  
depending on the relative locations of the read and write pointers.  
FL/RT  
I
GND  
Ground  
Q0Q8  
O
I
Data outputs. Q0Q8 are in the high-impedance state when R is high or the FIFO is empty.  
Read-enable input. A read cycle begins on the falling edge of R if EF is high. This activates Q0Q8 and shifts the next  
data value to this bus. The data outputs return to the high-impedance state as R goes high. As the last stored word is  
read by the falling edge of R, EF transitions low but Q0Q8 remain active until R returns high. When the FIFO is empty,  
the internal read pointer is unchanged by a pulse on R.  
R
Reset input. A reset is performed by taking RS low. This initializes the internal read and write pointers to the first location  
and sets EF low, FF high, and HF high. Both R and W must be held high for a reset during the window shown in Figure 7.  
A reset is required after power up before a write operation can take place.  
RS  
I
V
CC  
Supply voltage  
Write-enable input. A write cycle begins on the falling edge of W if FF is high. The value on D0D8 is stored in memory  
as W returns high. When the FIFO is full, FF is low inhibiting W from performing any operation on the device.  
W
I
I
Expansion-in input. XI performs two functions. XI is tied to ground to indicate that the device is not used in depth  
expansion.When the device is used in depth expansion, XI is connected to the expansion-out (XO) output of the previous  
device in the depth-expansion chain.  
XI  
Expansion-out/half-full-flagoutput. XO/HF performs two functions. When the device is not used in depth expansion (i.e.,  
when XI is tied to ground), XO/HF indicates when half the memory locations are filled. After half of the memory is filled,  
the falling edge on W for the next write operation drives XO/HF low. XO/HF remains low until a rising edge of R reduces  
the number of words stored to exactly half of the total memory.  
XO/HF  
O
Whenthedeviceisusedindepthexpansion, XO/HFis connected to XI of the next device in the daisy chain. XO/HFdrives  
the daisy chain by sending a pulse to the next device when the previous device reaches the last memory location.  
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)  
Supply voltage range, V  
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to 7 V  
CC  
Input voltage range (any input), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to 7 V  
Continuous output current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
Voltage applied to a disabled 3-state output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V  
I
O
Operating free-air temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C  
A
Storage temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to 125°C  
stg  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTE 1: All voltage values are with respect to GND.  
recommended operating conditions  
MIN NOM  
MAX  
UNIT  
V
V
V
Supply voltage  
4.5  
2.6  
2
5
5.5  
V
CC  
XI  
High-level input voltage  
V
IH  
Other inputs  
Low-level input voltage  
0.8  
–2  
8
V
IL  
I
I
High-level output current  
Low-level output current  
Operating free-air temperature  
mA  
mA  
°C  
OH  
OL  
T
A
0
70  
electrical characteristics over recommended operating free-air temperature range, V  
(unless otherwise noted)  
= 5.5 V  
CC  
PARAMETER  
TEST CONDITIONS  
MIN  
MAX  
UNIT  
V
V
V
V
V
V
V
= 4.5 V,  
= 4.5 V,  
I
I
= – 2 mA  
= 8 mA  
2.4  
OH  
CC  
OH  
0.4  
±10  
±10  
1
V
OL  
CC  
OL  
I
= V  
,
R V  
R V  
µA  
µA  
µA  
mA  
mA  
mA  
pF  
OZH  
OZL  
I
O
O
CC  
= 0.4 V,  
IH  
IH  
I
I
V = 0 to 5.5 V  
I
–1  
I
f
= 20 MHz  
120  
12  
CC1  
CC2  
CC3  
clock  
R, W, RS, and FL/RT at V  
I
IH  
I
V = V  
I
– 0.2 V  
2
CC  
§
C
C
V = 0,  
I
T
= 25°C,  
T = 25°C,  
A
f = 1 MHz  
f = 1 MHz  
10  
i
A
§
V
O
= 0,  
10  
pF  
o
§
I
= supply current; I  
= standby current; I  
= power-down current. I  
measurements are made with outputs open (only capacitive  
CC  
CC1  
loading).  
CC2  
CC3  
This parameter is sampled and not 100% tested.  
8
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
timing requirements over recommended ranges of supply voltage and operating free-air  
temperature (unless otherwise noted)  
ACT7203L-15  
ACT7204L-15  
ACT7205L-15  
ACT7206L-15  
ACT7203L-25  
ACT7204L-25  
ACT7205L-25  
ACT7206L-25  
ACT7203L-50  
ACT7204L-50  
ACT7205L-50  
ACT7206L-50  
FIGURE  
UNIT  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
f
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Clock frequency, R or W  
Cycle time, read  
40  
28.5  
15  
MHz  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
clock  
1(a)  
1(b)  
7
25  
25  
25  
25  
15  
15  
10  
10  
15  
15  
15  
10  
11  
15  
15  
10  
10  
0
35  
35  
35  
35  
25  
25  
10  
10  
25  
25  
25  
10  
15  
25  
25  
10  
10  
0
65  
65  
65  
65  
50  
50  
15  
15  
50  
50  
50  
10  
30  
50  
50  
15  
15  
5
c(R)  
Cycle time, write  
c(W)  
Cycle time, reset  
c(RS)  
c(RT)  
Cycle time, retransmit  
Pulse duration, R low  
Pulse duration, W low  
Pulse duration, R high  
Pulse duration, W high  
Pulse duration, FL/RT low  
Pulse duration, RS low  
Pulse duration, XI low  
Pulse duration, XI high  
Setup time, data before W↑  
Setup time, R and W high before FL/RT↑  
4
1(a)  
1(b)  
1(a)  
1(b)  
4
w(RL)  
w(WL)  
w(RH)  
w(WH)  
w(RT)  
w(RS)  
w(XIL)  
w(XIH)  
su(D)  
7
10  
10  
1(b), 6  
4
su(RT)  
su(RS)  
su(XI-R)  
su(XI-W)  
h(D)  
Setup time, R and W high before RS↑  
Setup time, XI low before R↓  
Setup time, XI low before W↓  
Hold time, data after W↑  
7
10  
10  
1(b), 6  
5, 11  
6, 12  
4
Hold time, R low after EF↑  
15  
15  
10  
10  
25  
25  
10  
10  
50  
50  
15  
15  
h(E-R)  
h(F-W)  
h(RT)  
h(RS)  
Hold time, W low after FF↑  
Hold time, R and W high after FL/RT↑  
Hold time, R and W high after RS↑  
7
These values are characterized but not currently tested.  
9
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
switching characteristics over recommended ranges of supply voltage and operating free-air  
temperature (see Figure 13)  
ACT7203L-15  
ACT7204L-15  
ACT7205L-15  
ACT7206L-15  
ACT7203L-25  
ACT7204L-25  
ACT7205L-25  
ACT7206L-25  
ACT7203L-50  
ACT7204L-50  
ACT7205L-50  
ACT7206L-50  
PARAMETER  
FIGURE  
UNIT  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
t
t
1(a), 3, 5  
1(a)  
15  
25  
50  
ns  
ns  
Access time, Ror EFto data out valid  
Valid time, data out valid after R↑  
Enable time, Rto Q outputs at  
a
5
5
5
5
5
v(RH)  
t
t
t
t
t
1(a)  
5
10  
ns  
ns  
ns  
ns  
ns  
en(R-QX)  
en(W-QX)  
dis(R)  
low impedance  
Enable time, Wto Q outputs at  
†‡  
low impedance  
5
5
15  
Disable time, Rto Q outputs at  
1(a)  
6
15  
15  
15  
18  
25  
25  
30  
45  
45  
high impedance  
Pulse duration, FF high in  
automatic-write mode  
w(FH)  
Pulse duration, EF high in  
automatic-read mode  
5
w(EH)  
t
t
t
2
2, 6, 12  
7
15  
15  
25  
25  
25  
35  
45  
45  
65  
ns  
ns  
ns  
Propagation delay time, Wto FF low  
Propagation delay time, Rto FF high  
Propagation delay time, RSto FF high  
pd(W-F)  
pd(R-F)  
pd(RS-F)  
Propagation delay time, RSto XO/HF  
high  
t
7
25  
35  
65  
ns  
pd(RS-HF)  
t
t
t
3, 5, 11  
15  
15  
25  
25  
25  
35  
45  
45  
65  
ns  
ns  
ns  
Propagation delay time, Wto EF high  
Propagation delay time, Rto EF low  
Propagation delay time, RSto EF low  
pd(W-E)  
pd(R-E)  
pd(RS-E)  
3
7
Propagation delay time, Wto XO/HF  
low  
t
t
t
t
t
t
t
8
8
9
9
9
9
4
25  
25  
15  
15  
15  
15  
25  
35  
35  
25  
25  
25  
25  
35  
65  
65  
50  
50  
50  
50  
65  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
pd(W-HF)  
pd(R-HF)  
Propagation delay time, Rto XO/HF  
high  
Propagation delay time, Rto XO/HF  
low  
pd(R-XOL)  
pd(W-XOL)  
pd(R-XOH)  
pd(W-XOH)  
pd(RT-FL)  
Propagation delay time, Wto XO/HF  
low  
Propagation delay time, Rto XO/HF  
high  
Propagation delay time, Wto XO/HF  
high  
Propagation delay time,  
FL/RTto HF, EF, FF valid  
These values are characterized but not currently tested.  
Only applies when data is automatically read  
10  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
PARAMETER MEASUREMENT INFORMATION  
t
t
w(RL)  
c(R)  
t
w(RH)  
t
a
t
a
R
t
t
t
dis(R)  
en(R-QX)  
w(RH)  
Q0 Q8  
Valid  
Valid  
(a) READ  
t
c(W)  
t
t
w(WH)  
w(WL)  
W
t
t
h(D)  
su(D)  
D0 D8  
Valid  
Valid  
(b) WRITE  
Figure 1. Asynchronous Waveforms  
Ignored  
First Read  
Write  
Last Write  
Additional Reads  
R
W
t
t
pd(R-F)  
pd(W-F)  
FF  
Figure 2. Full-Flag Waveforms  
11  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
PARAMETER MEASUREMENT INFORMATION  
Ignored  
Read  
Last Read  
First Write  
Additional Writes  
W
R
t
t
pd(R-E)  
pd(W-E)  
EF  
t
a
D0 D8  
Valid  
Figure 3. Empty-Flag Waveforms  
t
c(RT)  
t
w(RT)  
FL/RT  
W, R  
t
t
h(RT)  
su(RT)  
XO/HF, EF, FF  
Valid Flag  
t
pd(RT-FL)  
NOTE A: The EF, FF, and XO/HF status flags are valid after completion of the retransmit cycle.  
Figure 4. Retransmit Waveforms  
12  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
PARAMETER MEASUREMENT INFORMATION  
W
R
t
h(E-R)  
EF  
t
w(EH)  
t
t
a
pd(W-E)  
t
en(W-QX)  
Q0 Q8  
Valid  
Figure 5. Automatic-Read Waveforms  
R
t
h(F-W)  
W
t
pd(R-F)  
FF  
t
w(FH)  
t
h(D)  
D0 D8  
Valid  
t
su(D)  
Figure 6. Automatic-Write Waveforms  
13  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
PARAMETER MEASUREMENT INFORMATION  
t
c(RS)  
t
w(RS)  
RS  
W
R
EF  
t
t
h(RS)  
su(RS)  
t
pd(RS-E)  
XO/HF, FF  
t
pd(RS-HF)  
t
pd(RS-F)  
Figure 7. Master-Reset Waveforms  
Half Full or Less  
More Than Half Full  
Half Full or Less  
W
R
t
pd(R-HF)  
t
pd(W-HF)  
XO/HF  
Figure 8. Half-Full Flag Waveforms  
14  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
PARAMETER MEASUREMENT INFORMATION  
Write to Last  
Physical Location  
W
R
Read From Last  
Physical Location  
t
pd(W-XOH)  
t
t
pd(W-XOL)  
pd(R-XOH)  
t
pd(R-XOL)  
XO/HF  
Figure 9. Expansion-Out Waveforms  
t
t
w(XIH)  
w(XIL)  
XI  
t
su(XI-W)  
Write to First  
Physical Location  
W
R
t
su(XI-R)  
Read From First  
Physical Location  
Figure 10. Expansion-In Waveforms  
W
t
pd(W-E)  
EF  
R
t
h(E-R)  
Figure 11. Minimum Timing for an Empty-Flag Coincident-Read Pulse  
15  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
PARAMETER MEASUREMENT INFORMATION  
R
t
pd(R-F)  
FF  
W
t
h(F-W)  
Figure 12. Minimum Timing for a Full-Flag Coincident-Write Pulse  
16  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
PARAMETER MEASUREMENT INFORMATION  
5 V  
1100 Ω  
From Output  
Under Test  
30 pF  
(see Note A)  
680 Ω  
LOAD CIRCUIT  
3 V  
3 V  
Timing  
Input  
High-Level  
Input  
1.5 V  
1.5 V  
1.5 V  
1.5 V  
GND  
GND  
3 V  
t
h
t
t
su  
w
Data,  
Enable  
Input  
3 V  
1.5 V  
1.5 V  
Low-Level  
Input  
1.5 V  
GND  
GND  
VOLTAGE WAVEFORMS  
SETUP AND HOLD TIMES  
VOLTAGE WAVEFORMS  
PULSE DURATIONS  
3 V  
Output  
Enable  
1.5 V  
1.5 V  
GND  
t
PLZ  
t
PZL  
3 V  
3 V  
Low-Level  
Output  
1.5 V  
1.5 V  
1.5 V  
Input  
V
V
OL  
GND  
t
PZH  
t
t
pd  
pd  
OH  
High-Level  
Output  
V
V
OH  
1.5 V  
In-Phase  
Output  
1.5 V  
1.5 V  
0 V  
OL  
t
PHZ  
VOLTAGE WAVEFORMS  
PROPAGATION DELAY TIMES  
VOLTAGE WAVEFORMS  
ENABLE AND DISABLE TIMES  
NOTE A: Includes probe and jig capacitance  
Figure 13. Load Circuit and Voltage Waveforms  
17  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
APPLICATION INFORMATION  
Combining two or more devices to create one FIFO with a greater number of memory bits is accomplished in two  
different ways. Width expansion increases the number of bits in each word by connecting FIFOs with the same depth  
in parallel. Depth expansion uses the built-in expansion logic to daisy-chain two or more devices for applications  
requiring more than 2048, 4096, 8192, or 16384 words of storage. Width expansion and depth expansion can beused  
together.  
width expansion  
Word-width expansion is achieved by connecting the corresponding input control to multiple devices with the  
same depth. Status flags (EF, FF, and HF) can be monitored from any one device. Figure 14 shows two FIFOs  
in a width-expansion configuration. Both devices have their expansion-in (XI) inputs tied to ground. This  
disables the depth-expansion function of the device, allowing the first-load/retransmit (FL/RT) input to function  
as a retransmit (RT) input and the expansion-out/half-full (XO/HF) output to function as a half-full (HF) flag.  
depth expansion  
The SN74ACT7203L/7204L/7205L/7206L are easily expanded in depth. Figure 15 shows the connections  
used to depth expand three SN74ACT7203L/7204L/7205L/7206L devices. Any depth can be attained by  
adding additional devices to the chain. The SN74ACT7203L/7204L/7205L/7206L operate in depth expansion  
under the following conditions:  
The first device in the chain is designated by connecting FL to ground.  
All other devices have their FL inputs at a high logic level.  
XO of each device must be connected to XI of the next device.  
External logic is needed to generate a composite FF and EF. All FF outputs must be ORed together,  
and all EF outputs must be ORed together.  
RT and HF functions are not available in the depth-expanded configuration.  
combined depth and width expansion  
Both expansion techniques can be used together to increase depth and width. This is done by creating  
depth-expanded units and then connecting them in a width-expanded configuration (see Figure 16).  
18  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
APPLICATION INFORMATION  
SN74ACT7203L/7204L/7205L/7206L  
D0 – D8  
9
Q0 – Q8  
9
18  
18  
Q0Q18  
EF  
D0D8 Q0Q8  
W
D0D18  
W
R
R
EF  
RT  
RS  
FF  
HF  
FL/RT  
RS  
FF  
XO/HF  
XI  
SN74ACT7203L/7204L/7205L/7206L  
D9 – D18  
9
Q9 – Q18  
9
D0D8 Q0Q8  
W
R
EF  
EF  
FF  
HF  
FL/RT  
RS  
FF  
XO/HF  
XI  
Figure 14. Word-Width Expansion: 2048/4096 Words × 18 Bits  
19  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
APPLICATION INFORMATION  
SN74ACT7203L/7204L/7205L/7206L  
9
9
9
9
D0D8  
Q0Q8  
D0D8 Q0Q8  
W
W
R
R
XO/HF  
RS  
EF  
FF  
RS  
FL/RT  
XI  
SN74ACT7203L/7204L/7205L/7206L  
9
9
D0D8 Q0Q8  
W
EF  
FF  
R
XO/HF  
RS  
EF  
FF  
FL/RT  
V
CC  
XI  
SN74ACT7203L/7204L/7205L/7206L  
9
9
D0D8 Q0Q8  
W
R
XO/HF  
RS  
EF  
FF  
FL/RT  
XI  
Figure 15. Word-Depth Expansion: 6144/12288/24576/49152 Words × 9 Bits  
20  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L  
2048 × 9, 4096 × 9, 8192 × 9, 16384 × 9  
ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES  
SCAS226A – FEBRUARY 1993 – REVISED SEPTEMBER 1995  
APPLICATION INFORMATION  
Q0Q17  
18  
Q0Q26  
27  
9
9
9
Q0Q8  
Q9Q17  
Q18Q26  
ACT7203L  
or  
ACT7204L  
or  
ACT7203L  
or  
ACT7204L  
or  
ACT7203L  
or  
ACT7204L  
or  
ACT7205L  
or  
ACT7206L  
Depth-  
Expansion  
Block  
ACT7205L  
or  
ACT7206L  
Depth-  
Expansion  
Block  
ACT7205L  
or  
ACT7206L  
Depth-  
Expansion  
Block  
W, R, RS  
9
9
9
D0D8  
18  
D9D26  
D9D17  
D18D26  
27  
D0D26  
Figure 16. Word-Depth Plus Word-Width Expansion  
21  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO  
BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
semiconductor products or services might be or are used. TI’s publication of information regarding any third  
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.  
Copyright 1999, Texas Instruments Incorporated  

相关型号:

SN74ACT7203L-25NP

2KX9 OTHER FIFO, 25ns, PDIP28, PLASTIC, DIP-28
TI

SN74ACT7203L-25RJ

2KX9 OTHER FIFO, 25ns, PQCC32
TI

SN74ACT7203L-50DV

2KX9 OTHER FIFO, 50ns, PDSO28
TI

SN74ACT7203L-50RJR

2KX9 OTHER FIFO, 50ns, PQCC32
TI

SN74ACT7203L15NP

ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES
TI

SN74ACT7203L15NP

2KX9 OTHER FIFO, 15ns, PDIP28, PLASTIC, DIP-28
ROCHESTER

SN74ACT7203L15RJ

ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES
TI

SN74ACT7203L15RJ

2KX9 OTHER FIFO, 15ns, PQCC32, PLASTIC, LCC-32
ROCHESTER

SN74ACT7203L25NP

ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES
TI

SN74ACT7203L25NP

2KX9 OTHER FIFO, 25ns, PDIP28, PLASTIC, DIP-28
ROCHESTER

SN74ACT7203L25RJ

2KX9 OTHER FIFO, 25ns, PQCC32, PLASTIC, LCC-32
ROCHESTER

SN74ACT7203L25RJ

2KX9 OTHER FIFO, 25ns, PQCC32, PLASTIC, LCC-32
TI