SN74CBTD16210DGVR [TI]

具有电平转换器和 2 个控制输入的 5V、1:1 (SPST)、20 通道 FET 总线开关 | DGV | 48 | -40 to 85;
SN74CBTD16210DGVR
型号: SN74CBTD16210DGVR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

具有电平转换器和 2 个控制输入的 5V、1:1 (SPST)、20 通道 FET 总线开关 | DGV | 48 | -40 to 85

开关 驱动 光电二极管 逻辑集成电路 总线驱动器 总线收发器 转换器 电平转换器
文件: 总6页 (文件大小:90K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SN74CBTD16210  
20-BIT FET BUS SWITCH  
WITH LEVEL SHIFTING  
SCDS049C – MARCH 1998 – REVISED MAY 1998  
DGG, DGV, OR DL PACKAGE  
(TOP VIEW)  
5-Switch Connection Between Two Ports  
TTL-Compatible Input Levels  
Designed to Be Used in Level-Shifting  
Applications  
NC  
1A1  
1A2  
1A3  
1A4  
1A5  
1A6  
GND  
1A7  
1A8  
1A9  
1A10  
2A1  
2A2  
1OE  
2OE  
1B1  
1B2  
1
48  
47  
46  
45  
2
Package Options Include Plastic 300-mil  
Shrink Small-Outline (DL), Thin Shrink  
Small-Outline (DGG), and Thin Very  
Small-Outline (DGV) Packages  
3
4
5
44 1B3  
43 1B4  
6
7
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
1B5  
GND  
1B6  
1B7  
1B8  
1B9  
1B10  
2B1  
2B2  
2B3  
GND  
2B4  
2B5  
2B6  
2B7  
2B8  
2B9  
2B10  
description  
8
9
The SN74CBTD16210 provides 20 bits of  
high-speed TTL-compatible bus switching. The  
low on-state resistance of the switch allows  
connections to be made with minimal propagation  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
delay. A diode to V  
is integrated in the circuit to  
CC  
allow for level shifting between 5-V inputs and  
3.3-V outputs.  
V
CC  
2A3  
GND  
2A4  
2A5  
2A6  
2A7  
2A8  
2A9  
2A10  
The device is organized as a dual 10-bit bus  
switch with separate output-enable (OE) inputs. It  
can be used as two 10-bit bus switches or as one  
20-bit bus switch. When OE is low, the associated  
10-bit bus switch is on and A port is connected to  
B port. When OE is high, the switch is open, and  
a high-impedance state exists between the ports.  
The SN74CBTD16210 is characterized for  
operation from –40°C to 85°C.  
NC – No internal connection  
FUNCTION TABLE  
(each 10-bit bus switch)  
INPUT  
FUNCTION  
OE  
L
A port = B port  
Z
H
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74CBTD16210  
20-BIT FET BUS SWITCH  
WITH LEVEL SHIFTING  
SCDS049C – MARCH 1998 – REVISED MAY 1998  
logic diagram (positive logic)  
2
46  
36  
1A1  
1B1  
12  
1A10  
1B10  
48  
13  
1OE  
2A1  
35  
2B1  
24  
47  
25  
2A10  
2OE  
2B10  
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)  
Supply voltage range, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V  
CC  
Input voltage range, V (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V  
I
Continuous channel current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 mA  
Input clamp current, I (V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA  
IK  
I
Package thermal impedance, θ (see Note 2): DGG package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89°C/W  
JA  
DGV package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93°C/W  
DL package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94°C/W  
Storage temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C  
stg  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTES: 1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.  
2. The package thermal impedance is calculated in accordance with JESD 51.  
recommended operating conditions (see Note 3)  
MIN  
4.5  
2
MAX  
UNIT  
V
V
V
V
Supply voltage  
5.5  
CC  
IH  
IL  
High-level control input voltage  
Low-level control input voltage  
Operating free-air temperature  
V
0.8  
85  
V
T
A
–40  
°C  
NOTE 3: All unused control inputs of the device must be held at V  
or GND to ensure proper device operation. Refer to the TI application report,  
CC  
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.  
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74CBTD16210  
20-BIT FET BUS SWITCH  
WITH LEVEL SHIFTING  
SCDS049C – MARCH 1998 – REVISED MAY 1998  
electrical characteristics over recommended operating free-air temperature range (unless  
otherwise noted)  
PARAMETER  
TEST CONDITIONS  
I = –18 mA  
MIN TYP  
MAX  
UNIT  
V
V
V
= 4.5 V,  
–1.2  
V
IK  
CC  
See Figure 2  
I
OH  
V
V
V
V
= 0 V,  
V = 5.5 V  
10  
±1  
CC  
CC  
CC  
CC  
I
I
µA  
I
= 5.5 V,  
= 5.5 V,  
= 5.5 V,  
V = 5.5 V or GND  
I
I
I
O
= 0,  
V = V  
or GND  
1.5  
2.5  
mA  
mA  
pF  
CC  
I
CC  
I  
CC  
Control inputs  
One input at 3.4 V,  
Other inputs at V  
or GND  
CC  
C
C
Control inputs V = 3 V or 0  
4.5  
5.5  
5
i
I
V
O
= 3 V or 0,  
OE = V  
CC  
pF  
io(OFF)  
I = 64 mA  
I
7
7
V = 0  
I
§
I = 30 mA  
I
5
V
CC  
= 4.5 V  
r
on  
V = 2.4 V,  
I
I = 15 mA  
I
35  
50  
§
All typical values are at V  
= 5 V, T = 25°C.  
A
CC  
This is the increase in supply current for each input that is at the specified TTL voltage level rather than V  
or GND.  
CC  
Measured by the voltage drop between the A and B terminals at the indicated current through the switch. On-state resistance is determined by  
the lowest voltage of the two (A or B) terminals.  
switching characteristics over recommended operating free-air temperature range, C = 50 pF  
L
(unless otherwise noted) (see Figure 1)  
FROM  
(INPUT)  
TO  
(OUTPUT)  
PARAMETER  
MIN  
MAX  
UNIT  
t
t
t
A or B  
OE  
B or A  
A or B  
A or B  
0.25  
9.8  
ns  
ns  
ns  
pd  
1.5  
1.5  
en  
OE  
8.9  
dis  
Thepropagation delay is the calculated RC time constant of the typical on-state resistance of the switch and the specified load capacitance, when  
driven by an ideal voltage source (zero output impedance).  
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74CBTD16210  
20-BIT FET BUS SWITCH  
WITH LEVEL SHIFTING  
SCDS049C – MARCH 1998 – REVISED MAY 1998  
PARAMETER MEASUREMENT INFORMATION  
7 V  
Open  
TEST  
S1  
S1  
500 Ω  
t
pd  
Open  
7 V  
From Output  
Under Test  
t
/t  
GND  
PLZ PZL  
t
/t  
Open  
C
= 50 pF  
PHZ PZH  
L
500 Ω  
(see Note A)  
3 V  
0 V  
Output  
Control  
(low-level  
enabling)  
1.5 V  
1.5 V  
LOAD CIRCUIT  
t
t
PZL  
t
PLZ  
Output  
Waveform 1  
S1 at 7 V  
3.5 V  
3 V  
0 V  
1.5 V  
Input  
V
OL  
+ 0.3 V  
1.5 V  
1.5 V  
(see Note B)  
V
OL  
t
PHZ  
t
t
PHL  
PZH  
PLH  
Output  
Waveform 2  
S1 at Open  
(see Note B)  
V
OH  
V
OH  
V
OH  
– 0.3 V  
0 V  
1.5 V  
Output  
1.5 V  
1.5 V  
V
OL  
VOLTAGE WAVEFORMS  
PROPAGATION DELAY TIMES  
VOLTAGE WAVEFORMS  
ENABLE AND DISABLE TIMES  
NOTES: A.  
C
L
includes probe and jig capacitance.  
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.  
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.  
C. All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, Z = 50 , t 2.5 ns, t 2.5 ns.  
O
r
f
D. The outputs are measured one at a time with one transition per measurement.  
E.  
F.  
G.  
t
t
t
and t  
and t  
and t  
PHL  
are the same as t  
.
dis  
PLZ  
PZL  
PLH  
PHZ  
PZH  
are the same as t  
.
en  
are the same as t .  
pd  
Figure 1. Load Circuit and Voltage Waveforms  
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74CBTD16210  
20-BIT FET BUS SWITCH  
WITH LEVEL SHIFTING  
SCDS049C – MARCH 1998 – REVISED MAY 1998  
TYPICAL CHARACTERISTICS  
OUTPUT VOLTAGE HIGH  
OUTPUT VOLTAGE HIGH  
vs  
vs  
SUPPLY VOLTAGE  
SUPPLY VOLTAGE  
4
3.75  
3.5  
4
3.75  
3.5  
–100 µA  
T
A
= 85°C  
T = 25°C  
A
–100 µA  
–6 mA  
–12 mA  
–24 mA  
–6 mA  
–12 mA  
–24 mA  
3.25  
3.25  
3
3
2.75  
2.75  
2.5  
2.5  
2.25  
2.25  
2
1.75  
1.5  
2
1.75  
1.5  
4.5  
4.75  
4.5  
4.75  
5.5  
5.75  
5.5  
5.75  
5
5.25  
5
5.25  
V
CC  
– Supply Voltage – V  
V
CC  
– Supply Voltage – V  
OUTPUT VOLTAGE HIGH  
vs  
SUPPLY VOLTAGE  
4
3.75  
3.5  
T
A
= 0°C  
–100 µA  
–6 mA  
–12 mA  
–24 mA  
3.25  
3
2.75  
2.5  
2.25  
2
1.75  
1.5  
4.5  
4.75  
5.5  
5.75  
5
5.25  
V
CC  
– Supply Voltage – V  
Figure 2. V  
Values  
OH  
5
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO  
BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
semiconductor products or services might be or are used. TI’s publication of information regarding any third  
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.  
Copyright 1998, Texas Instruments Incorporated  

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