SN74CBTD3306 [TI]
DUAL FET BUS SWITCH WITH LEVEL SHIFTING; 与电平转换双FET总线开关型号: | SN74CBTD3306 |
厂家: | TEXAS INSTRUMENTS |
描述: | DUAL FET BUS SWITCH WITH LEVEL SHIFTING |
文件: | 总5页 (文件大小:77K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SN74CBTD3306
DUAL FET BUS SWITCH
WITH LEVEL SHIFTING
SCDS030F – JANUARY 1996 – REVISED MAY 1998
D OR PW PACKAGE
(TOP VIEW)
5-Ω Switch Connection Between Two Ports
TTL-Compatible Input Levels
Designed to Be Used in Level-Shifting
Applications
1OE
1A
V
CC
2OE
1
2
3
4
8
7
6
5
2B
2A
Package Options Include Plastic
Small-Outline (D) and Thin Shrink
Small-Outline (PW) Packages
1B
GND
description
The SN74CBTD3306 features two independent line switches. Each switch is disabled when the associated
output-enable (OE) input is high. A diode to V
inputs and 3.3-V outputs.
is integrated on the chip to allow for level shifting between 5-V
CC
The SN74CBTD3306 is characterized for operation from –40°C to 85°C.
FUNCTION TABLE
(each bus switch)
INPUT
FUNCTION
OE
L
A port = B port
Disconnect
H
logic diagram (positive logic)
2
1
3
6
1B
2B
1A
1OE
5
7
2A
2OE
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN74CBTD3306
DUAL FET BUS SWITCH
WITH LEVEL SHIFTING
SCDS030F – JANUARY 1996 – REVISED MAY 1998
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V
CC
Input voltage range, V (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V
I
Continuous channel current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 mA
Input clamp current, I (V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
IK I/O
Package thermal impedance, θ (see Note 2): D package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197°C/W
JA
PW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 243°C/W
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
stg
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
2. The package thermal impedance is calculated in accordance with JESD 51.
recommended operating conditions (see Note 3)
MIN
4.5
2
MAX
UNIT
V
V
V
V
Supply voltage
5.5
CC
IH
IL
High-level control input voltage
Low-level control input voltage
Operating free-air temperature
V
0.8
85
V
T
A
–40
°C
NOTE 3: All unused control inputs of the device must be held at V
or GND to ensure proper device operation. Refer to the TI application report,
CC
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
‡
PARAMETER
TEST CONDITIONS
I = –18 mA
MIN TYP
MAX
UNIT
V
V
V
= 4.5 V,
–1.2
V
IK
CC
See Figure 2
I
OH
I
V
V
V
= 5.5 V,
= 5.5 V,
= 5.5 V,
V = 5.5 V or GND
±1
1.5
2.5
µA
mA
mA
pF
I
CC
CC
CC
I
I
I
O
= 0,
V = V
or GND
CC
I
CC
§
∆I
CC
Control inputs
One input at 3.4 V,
Other inputs at V
or GND
CC
C
C
Control inputs V = 3 V or 0
3
4
5
5
i
I
V
O
= 3 V or 0,
OE = V
CC
pF
io(OFF)
I = 64 mA
I
7
7
V
= 0
I
I
¶
V
CC
= 4.5 V
I = 30 mA
I
Ω
r
on
V
= 2.4 V,
I = 15 mA
I
35
50
‡
§
¶
All typical values are at V
= 5 V, T = 25°C.
A
CC
This is the increase in supply current for each input that is at the specified TTL voltage level rather than V
or GND.
CC
Measured by the voltage drop between the A and B terminals at the indicated current through the switch. On-state resistance is determined by
the lower of the voltages of the two (A or B) terminals.
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN74CBTD3306
DUAL FET BUS SWITCH
WITH LEVEL SHIFTING
SCDS030F – JANUARY 1996 – REVISED MAY 1998
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature range, C = 50 pF (unless otherwise noted) (see Figure 1)
L
FROM
(INPUT)
TO
(OUTPUT)
PARAMETER
MIN
MAX
UNIT
†
t
t
t
A or B
OE
B or A
A or B
A or B
0.25
5.4
ns
ns
ns
pd
2.1
1
en
4.7
OE
dis
†
Thepropagation delay is the calculated RC time constant of the typical on-state resistance of the switch and the specified load capacitance, when
driven by an ideal voltage source (zero output impedance).
PARAMETER MEASUREMENT INFORMATION
7 V
TEST
S1
Open
7 V
S1
Open
GND
500 Ω
From Output
Under Test
t
pd
/t
t
t
PLZ PZL
/t
Open
PHZ PZH
C
= 50 pF
L
500 Ω
(see Note A)
3 V
0 V
Output
Control
(low-level
enabling)
1.5 V
1.5 V
LOAD CIRCUIT
t
PZL
t
PLZ
Output
Waveform 1
S1 at 7 V
3.5 V
3 V
0 V
1.5 V
Input
V
+ 0.3 V
1.5 V
1.5 V
OL
(see Note B)
V
OL
t
PHZ
t
PZH
t
t
PHL
PLH
Output
Waveform 2
S1 at Open
(see Note B)
V
OH
V
OH
– 0.3 V
0 V
V
OH
1.5 V
Output
1.5 V
1.5 V
V
OL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
NOTES: A.
C
L
includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t ≤ 2.5 ns, t ≤ 2.5 ns.
O
r
f
D. The outputs are measured one at a time with one transition per measurement.
E.
F.
G.
t
t
t
and t
and t
and t
are the same as t
.
dis
PLZ
PZL
PHL
PHZ
PZH
PLH
are the same as t
.
en
are the same as t .
pd
Figure 1. Load Circuit and Voltage Waveforms
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN74CBTD3306
DUAL FET BUS SWITCH
WITH LEVEL SHIFTING
SCDS030F – JANUARY 1996 – REVISED MAY 1998
TYPICAL CHARACTERISTICS
OUTPUT VOLTAGE HIGH
vs
SUPPLY VOLTAGE
OUTPUT VOLTAGE HIGH
vs
SUPPLY VOLTAGE
4
3.75
3.5
4
3.75
3.5
T
A
= 85°C
T = 25°C
A
100 µA
100 µA
6 mA
12 mA
6 mA
12 mA
3.25
3.25
24 mA
24 mA
3
3
2.75
2.75
2.5
2.25
2
2.5
2.25
2
1.75
1.5
1.75
1.5
4.5
4.75
5
5.25
5.5
5.75
4.5
4.75
5
5.25
5.5
5.75
V
CC
– Supply Voltage – V
V
CC
– Supply Voltage – V
OUTPUT VOLTAGE HIGH
vs
SUPPLY VOLTAGE
4
3.75
3.5
T
A
= 0°C
100 µA
3.25
6 mA
12 mA
3
24 mA
2.75
2.5
2.25
2
1.75
1.5
4.5
4.75
5
5.25
5.5
5.75
V
CC
– Supply Voltage – V
Figure 2. V
Values
OH
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
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any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998, Texas Instruments Incorporated
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