SN74CBTS3306PWLE [TI]

Dual FET Bus Switch With Schottky Diode Clamping 8-TSSOP -40 to 85;
SN74CBTS3306PWLE
型号: SN74CBTS3306PWLE
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

Dual FET Bus Switch With Schottky Diode Clamping 8-TSSOP -40 to 85

肖特基二极管 开关
文件: 总4页 (文件大小:66K)
中文:  中文翻译
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SN74CBTS3306  
DUAL FET BUS SWITCH  
WITH SCHOTTKY DIODE CLAMPING  
SCDS029E – JANUARY 1996 – REVISED NOVEMBER 1998  
D OR PW PACKAGE  
(TOP VIEW)  
5-Switch Connection Between Two Ports  
TTL-Compatible Input Levels  
Package Options Include Plastic  
Small-Outline (D) and Thin Shrink  
Small-Outline (PW) Packages  
V
2OE  
2B  
2A  
1
2
3
4
8
7
6
5
1OE  
1A  
1B  
CC  
GND  
description  
The SN74CBTS3306 features independent line switches with Schottky diodes on the I/Os to clamp undershoot.  
Each switch is disabled when the associated output-enable (OE) input is high.  
The SN74CBTS3306 is characterized for operation from –40°C to 85°C.  
FUNCTION TABLE  
(each bus switch)  
INPUT  
FUNCTION  
OE  
L
A port = B port  
Disconnect  
H
logic diagram (positive logic)  
3
6
2
1B  
2B  
1A  
1
5
1OE  
2A  
7
2OE  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74CBTS3306  
DUAL FET BUS SWITCH  
WITH SCHOTTKY DIODE CLAMPING  
SCDS029E – JANUARY 1996 – REVISED NOVEMBER 1998  
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)  
Supply voltage range, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V  
CC  
Input voltage range, V (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V  
I
Continuous channel current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 mA  
Input clamp current, I (V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA  
IK I/O  
Package thermal impedance, θ (see Note 2): D package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197°C/W  
JA  
PW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 243°C/W  
Storage temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C  
stg  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTES: 1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.  
2. The package thermal impedance is calculated in accordance with JESD 51.  
recommended operating conditions (see Note 3)  
MIN  
4
MAX  
UNIT  
V
V
V
V
Supply voltage  
5.5  
CC  
IH  
IL  
High-level control input voltage  
Low-level control input voltage  
Operating free-air temperature  
2
V
0.8  
85  
V
T
A
–40  
°C  
NOTE 3: All unused control inputs of the device must be held at V  
or GND to ensure proper device operation. Refer to the TI application report,  
CC  
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.  
electrical characteristics over recommended operating free-air temperature range (unless  
otherwise noted)  
PARAMETER  
A or B inputs  
Control inputs  
TEST CONDITIONS  
MIN TYP  
MAX  
–0.7  
–1.2  
–1  
UNIT  
V
V
= 4.5 V,  
I = –18 mA  
V
IK  
CC  
I
I
I
V
CC  
V
CC  
V
CC  
V
CC  
= 5.5 V,  
= 5.5 V,  
= 5.5 V,  
= 5.5 V,  
V = GND  
I
IL  
I
I
µA  
I
V = 5.5 V  
IH  
I
50  
3
I
O
= 0,  
V = V  
I
or GND  
µA  
mA  
pF  
CC  
CC  
§
I  
CC  
Control inputs  
One input at 3.4 V,  
Other inputs at V  
or GND  
2.5  
CC  
C
C
Control inputs V = 3 V or 0  
5
6
i
I
V
O
= 3 V or 0,  
OE = V  
pF  
io(OFF)  
CC  
V
= 4 V,  
CC  
V = 2.4 V,  
I
I = 15 mA  
I
14  
20  
TYP at V  
= 4 V  
CC  
I = 64 mA  
I
5
5
7
7
r
on  
V = 0  
I
V
CC  
= 4.5 V  
I = 30 mA  
I
V = 2.4 V,  
I
I = 15 mA  
I
10  
15  
§
All typical values are at V  
= 5 V (unless otherwise noted), T = 25°C.  
A
CC  
This is the increase in supply current for each input that is at the specified TTL voltage level rather than V  
or GND.  
CC  
Measuredby the voltage drop between the A and B pin at the indicated current through the switch. On-state resistance is determined by the lower  
of the voltages of the two (A or B) pins.  
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74CBTS3306  
DUAL FET BUS SWITCH  
WITH SCHOTTKY DIODE CLAMPING  
SCDS029E – JANUARY 1996 – REVISED NOVEMBER 1998  
switching characteristics over recommended operating free-air temperature range, C = 50 pF  
L
(unless otherwise noted) (see Figure 1)  
V
= 5 V  
CC  
± 0.5 V  
V
= 4 V  
FROM  
(INPUT)  
TO  
(OUTPUT)  
CC  
PARAMETER  
UNIT  
MIN  
MAX  
MIN  
MAX  
0.25  
5
t
t
t
A or B  
OE  
B or A  
A or B  
A or B  
0.35  
5.6  
ns  
ns  
ns  
pd  
en  
1.8  
1
4.6  
4.3  
OE  
dis  
Thepropagation delay is the calculated RC time constant of the typical on-state resistance of the switch and the specified load capacitance, when  
driven by an ideal voltage source (zero output impedance).  
PARAMETER MEASUREMENT INFORMATION  
TEST  
S1  
Open  
7 V  
7 V  
Open  
t
S1  
pd  
500 Ω  
From Output  
Under Test  
t
t
/t  
PLZ PZL  
/t  
GND  
0pen  
PHZ PZH  
C
= 50 pF  
L
500 Ω  
(see Note A)  
3 V  
0 V  
Output  
Control  
(low-level  
enabling)  
1.5 V  
1.5 V  
LOAD CIRCUIT  
t
PZL  
t
PLZ  
Output  
Waveform 1  
S1 at 7 V  
3.5 V  
3 V  
0 V  
1.5 V  
Input  
V
V
+ 0.3 V  
1.5 V  
1.5 V  
OL  
V
OL  
(see Note B)  
t
PHZ  
t
PZH  
t
t
PHL  
PLH  
Output  
Waveform 2  
S1 at Open  
(see Note B)  
V
OH  
– 0.3 V  
V
OH  
OH  
OL  
1.5 V  
Output  
1.5 V  
1.5 V  
0 V  
V
VOLTAGE WAVEFORMS  
PROPAGATION DELAY TIMES  
VOLTAGE WAVEFORMS  
ENABLE AND DISABLE TIMES  
NOTES: A.  
C includes probe and jig capacitance.  
L
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.  
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.  
C. All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, Z = 50 , t 2.5 ns, t 2.5 ns.  
O
r
f
D. The outputs are measured one at a time with one transition per measurement.  
E.  
F.  
G.  
t
t
t
and t  
and t  
and t  
PLH  
are the same as t  
.
dis  
PLZ  
PZL  
PHL  
PHZ  
PZH  
are the same as t  
.
en  
are the same as t .  
pd  
Figure 1. Load Circuit and Voltage Waveforms  
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO  
BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
semiconductor products or services might be or are used. TI’s publication of information regarding any third  
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.  
Copyright 1998, Texas Instruments Incorporated  

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