SN74LVC1G66QDCKRQ1 [TI]
汽车类 5.5V、1:1 (SPST)、单通道模拟开关 | DCK | 5 | -40 to 125;
| 型号： | SN74LVC1G66QDCKRQ1 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 汽车类 5.5V、1:1 (SPST)、单通道模拟开关 | DCK | 5 | -40 to 125 开关 PC 光电二极管 输出元件 |
| 文件： | 总11页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢀꢁꢂ ꢃ ꢄꢅ ꢆꢇ ꢈ ꢉꢉ ꢊꢋ ꢇ
ꢀꢌ ꢁꢈ ꢄ ꢍ ꢎꢌ ꢄꢏꢐ ꢍꢑꢏꢄ ꢏꢁꢏ ꢄꢒ ꢈ ꢀ ꢓꢌ ꢐꢆ ꢔ
SCES499B − OCTOBER 2003 − REVISED JANUARY 2005
D
Qualification in Accordance With
AEC-Q100
D
D
D
D
High Degree of Linearity
†
High Speed, Typically 0.5 ns
D
Qualified for Automotive Applications
(V
= 3 V, C = 50 pF)
CC L
D
Customer-Specific Configuration Control
Can Be Supported Along With
Major-Change Approval
Low On-State Resistance, Typically ≈5.5 Ω
(V = 4.5 V)
CC
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
D
ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
DBV or DCK PACKAGE
(TOP VIEW)
D
D
D
1.65-V to 5.5-V V
Operation
CC
1
2
3
5
4
A
B
GND
V
CC
Inputs Accept Voltages to 5.5 V
High On-Off Output Voltage Ratio
C
†
Contact factory for details. Q100 qualification data available on
request.
description/ordering information
This single analog switch is designed for 1.65-V to 5.5-V V
operation.
CC
The SN74LVC1G66 can handle both analog and digital signals. The device permits signals with amplitudes of
up to 5.5 V (peak) to be transmitted in either direction.
Applications include signal gating, chopping, modulation or demodulation (modem), and signal multiplexing for
analog-to-digital and digital-to-analog conversion systems.
ORDERING INFORMATION
ORDERABLE
PART NUMBER
TOP-SIDE
MARKING
‡
PACKAGE
T
A
§
SOT (SOT-23) − DBV
SOT (SOT-70) − DCK
Reel of 2875
Reel of 2875
1P1G66QDBVRQ1
1P1G66QDCKRQ1
C66_
−40°C to 125°C
C6_
‡
§
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
DBV: The actual top-side marking has one additional character that designates the assembly/test site.
FUNCTION TABLE
CONTROL
INPUT
(C)
SWITCH
L
OFF
ON
H
logic diagram (positive logic)
1
2
B
A
C
4
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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Copyright 2005, Texas Instruments Incorporated
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1
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SCES499B − OCTOBER 2003 − REVISED JANUARY 2005
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 6.5 V
CC
Input voltage range, V (see Notes 1 and 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 6.5 V
I
Switch I/O voltage range, V (see Notes 1, 2, and 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to V
+ 0.5 V
I/O
CC
Control input clamp current, I (V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA
IK
I
I/O port diode current, I
(V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA
IOK I/O
On-state switch current, I (V = 0 to V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Continuous current through V
T
I/O
CC
CC
or GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Package thermal impedance, θ (see Note 2): DBV package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206°C/W
JA
DCK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 252°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Storage temperature range, T
stg
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltages are with respect to ground, unless otherwise specified.
2. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
3. This value is limited to 5.5 V maximum.
4. The package thermal impedance is calculated in accordance with JESD 51-7.
recommended operating conditions (see Note 5)
MIN
1.65
0
MAX
UNIT
V
V
V
Supply voltage
I/O port voltage
5.5
CC
V
CC
V
I/O
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 3 V to 3.6 V
V
× 0.65
CC
V
V
V
× 0.7
× 0.7
× 0.7
CC
CC
CC
V
High-level input voltage, control input
V
IH
= 4.5 V to 5.5 V
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 3 V to 3.6 V
V
× 0.35
CC
V
V
V
× 0.3
× 0.3
× 0.3
5.5
CC
CC
CC
V
V
Low-level input voltage, control input
Control input voltage
V
V
IL
= 4.5 V to 5.5 V
0
I
V
CC
V
CC
V
CC
V
CC
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 3 V to 3.6 V
20
20
∆t/∆v
Input transition rise/fall time
ns/V
10
= 4.5 V to 5.5 V
10
T
A
Operating free-air temperature
−40
125
°C
NOTE 5: All unused inputs of the device must be held at V
or GND to ensure proper device operation. Refer to the TI application report,
CC
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
2
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SCES499B − OCTOBER 2003 − REVISED JANUARY 2005
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
†
TYP
PARAMETER
TEST CONDITIONS
MIN
MAX
35
UNIT
V
CC
I
S
I
S
I
S
I
S
I
S
I
S
I
S
I
S
= 4 mA
= 8 mA
= 16 mA
= 16 mA
= 4 mA
= 8 mA
= 16 mA
= 16 mA
1.65 V
2.3 V
3 V
12
9
V = V
or GND,
I
CC
IH
30
V
C
= V
r
On-state switch resistance
Ω
on
9
30
(see Figure 1)
4.5 V
1.65 V
2.3 V
3 V
5.5
74.5
20
25
165
60
V = V
to GND,
I
CC
IH
V
C
= V
r
I
Peak on resistance
Ω
on(p)
12.5
7.5
35
(see Figure 1)
4.5 V
25
V = V
CC
and V = GND or
O
1
I
V = GND and V = V
,
Off-state switch leakage current
5.5 V
µA
I
V
O
CC
S(off)
†
0.1
= V (see Figure 2)
C
IL
1
†
V = V
CC
or GND, V = V , V = Open
IH
I
C
O
I
I
I
On-state switch leakage current
Control input current
Supply current
5.5 V
5.5 V
5.5 V
µA
µA
µA
S(on)
(see Figure 3)
0.1
1
†
V
= V
or GND
I
C
CC
0.1
10
V
V
= V
= V
or GND
− 0.6 V
CC
C
CC
†
1
∆I
Supply current change
5.5 V
5 V
500
µA
pF
pF
pF
CC
C
CC
C
C
C
Control input capacitance
Switch input/output capacitance
Switch input/output capacitance
2
6
ic
5 V
io(off)
io(on)
5 V
13
†
T
A
= 25°C
switching characteristics over recommended operating free-air temperature range (unless
otherwise noted) (see Figure 4)
V
= 1.8 V
V
= 2.5 V
V
= 3.3 V
V
= 5 V
CC
0.15 V
CC
0.2 V
CC
0.3 V
CC
0.5 V
FROM
(INPUT)
TO
(OUTPUT)
PARAMETER
UNIT
MIN MAX
MIN MAX
MIN MAX
MIN
MAX
‡
§
t
t
t
A or B
B or A
A or B
A or B
5.5
14
12
3.2
9.5
8.9
2.8
8
2.6
7.2
6.9
ns
ns
ns
pd
en
C
C
2.5
2.2
1.9
1.4
1.8
2
1.5
1.4
¶
8.4
dis
‡
t
and t
PHL
are the same as t . The propagation delay is the calculated RC time constant of the typical on-state resistance of the switch and
pd
PLH
the specified load capacitance, when driven by an ideal voltage source (zero output impedance).
§
¶
t
t
and t
and t
are the same as t
.
.
PZL
PLZ
PZH
PHZ
en
are the same as t
dis
3
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SCES499B − OCTOBER 2003 − REVISED JANUARY 2005
analog switch characteristics, T = 25°C
A
FROM
TO
(OUTPUT)
PARAMETER
(INPUT)
TEST CONDITIONS
V
CC
TYP
UNIT
1.65 V
2.3 V
3 V
35
120
175
195
>300
>300
>300
>300
35
C
= 50 pF, R = 600 Ω,
L
L
f
in
= sine wave
(see Figure 5)
†
4.5 V
1.65 V
2.3 V
3 V
Frequency response
(switch ON)
A or B
B or A
A or B
B or A
MHz
C
= 5 pF, R = 50 Ω,
L
L
f
in
= sine wave
(see Figure 5)
4.5 V
1.65 V
2.3 V
3 V
C
= 50 pF, R = 600 Ω,
50
L
L
Crosstalk
C
mV
f
in
= 1 MHz (square wave)
(control input to signal output)
70
(see Figure 6)
4.5 V
1.65 V
2.3 V
3 V
100
−58
−58
−58
−58
−42
−42
−42
−42
0.1
C
= 50 pF, R = 600 Ω,
= 1 MHz (sine wave)
L
L
f
in
(see Figure 7)
‡
4.5 V
1.65 V
2.3 V
3 V
Feedthrough attenuation
(switch OFF)
A or B
dB
C
= 5 pF, R = 50 Ω,
L
L
f
in
= 1 MHz (sine wave)
(see Figure 7)
4.5 V
1.65 V
2.3 V
3 V
C
= 50 pF, R = 10 kΩ,
L
L
0.025
0.015
0.01
f
in
= 1 kHz (sine wave)
(see Figure 8)
4.5 V
Sine-wave distortion
A or B
B or A
%
1.65 V
2.3 V
3 V
0.15
0.025
0.015
0.01
C
= 50 pF, R = 10 kΩ,
L
L
f
in
= 10 kHz (sine wave)
(see Figure 8)
4.5 V
†
‡
Adjust f voltage to obtain 0 dBm at output. Increase f frequency until dB meter reads −3 dB.
in
Adjust f voltage to obtain 0 dBm at input.
in
in
operating characteristics, T = 25°C
A
V
= 1.8 V
CC
TYP
V
= 2.5 V
CC
TYP
V
= 3.3 V
CC
TYP
V = 5 V
CC
PARAMETER
TEST CONDITIONS
UNIT
TYP
C
Power dissipation capacitance f = 10 MHz
8
9
9
11
pF
pd
4
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SCES499B − OCTOBER 2003 − REVISED JANUARY 2005
PARAMETER MEASUREMENT INFORMATION
V
CC
V
CC
B or A
A or B
V = V
I CC
or GND
V
O
C
V
IH
V
C
(ON)
GND
I
S
VI * VO
ron
+
W
IS
V
V − V
I
O
Figure 1. On-State Resistance Test Circuit
V
CC
CC
V
B or A
A or B
V
I
A
V
O
C
V
IL
V
C
(OFF)
GND
Condition 1: V = GND, V = V
CC
I
O
Condition 2: V = V , V = GND
I
CC
O
Figure 2. Off-State Switch Leakage-Current Test Circuit
5
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SCES499B − OCTOBER 2003 − REVISED JANUARY 2005
PARAMETER MEASUREMENT INFORMATION
V
CC
CC
V
B or A
A or B
A
V = V
I CC
or GND
V
O
V
O
= Open
C
V
IH
V
C
(ON)
GND
Figure 3. On-State Leakage-Current Test Circuit
6
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SCES499B − OCTOBER 2003 − REVISED JANUARY 2005
PARAMETER MEASUREMENT INFORMATION
V
LOAD
Open
S1
R
L
From Output
Under Test
TEST
S1
GND
t
t
/t
Open
PLH PHL
/t
C
L
t
V
R
PLZ PZL
LOAD
GND
L
(see Note A)
/t
PHZ PZH
LOAD CIRCUIT
INPUTS
V
CC
V
M
V
C
R
L
V
LOAD
L
∆
V
I
t /t
r f
1.8 V 0.15 V
2.5 V 0.2 V
3.3 V 0.3 V
5 V 0.5 V
V
CC
V
CC
V
CC
V
CC
≤2 ns
≤2 ns
≤2.5 ns
≤2.5 ns
V
CC
V
CC
V
CC
V
CC
/2
/2
/2
/2
2 × V
2 × V
2 × V
2 × V
30 pF
30 pF
50 pF
50 pF
1 kΩ
500 Ω
500 Ω
500 Ω
0.15 V
0.15 V
0.3 V
CC
CC
CC
CC
0.3 V
V
I
Timing Input
Data Input
V
M
0 V
t
w
t
t
su
h
V
I
V
I
Input
V
M
V
M
V
M
V
M
0 V
0 V
VOLTAGE WAVEFORMS
PULSE DURATION
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
V
I
V
I
Output
Control
V
M
V
M
Input
V
M
V
M
0 V
V
0 V
t
t
t
t
t
PHL
PZL
PLZ
+ V
PLH
PHL
Output
Waveform 1
V
/2
OH
LOAD
V
V
V
M
Output
M
V
V
M
S1 at V
(see Note B)
V
LOAD
OL
∆
V
OL
V
OL
t
PLH
t
t
PZH
PHZ
− V
Output
Waveform 2
S1 at GND
V
V
OH
V
OH
V
V
M
OH
∆
M
Output
M
≈0 V
OL
(see Note B)
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. includes probe and jig capacitance.
C
L
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω.
O
D. The outputs are measured one at a time, with one transition per measurement.
E.
F.
G.
t
t
t
and t
and t
and t
PHL
are the same as t
.
dis
PLZ
PZL
PLH
PHZ
PZH
are the same as t
.
en
are the same as t .
pd
H. All parameters and waveforms are not applicable to all devices.
Figure 4. Load Circuit and Voltage Waveforms
7
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ꢀ ꢁꢂ ꢃꢄꢅꢆ ꢇ ꢈꢉꢉ ꢊꢋꢇ
ꢀ ꢌꢁ ꢈꢄ ꢍ ꢎ ꢌ ꢄ ꢏꢐ ꢍꢑ ꢏꢄ ꢏꢁ ꢏꢄ ꢒꢈ ꢀ ꢓꢌ ꢐ ꢆꢔ
SCES499B − OCTOBER 2003 − REVISED JANUARY 2005
PARAMETER MEASUREMENT INFORMATION
V
CC
CC
V
0.1 µF
B or A
A or B
C
V
O
R
L
C
L
V
IH
50 Ω
f
V
C
in
(ON)
GND
V
CC
/2
R /C : 600 Ω/50 pF
L
L
R /C : 50 Ω/5 pF
L
L
Figure 5. Frequency Response (Switch ON)
V
CC
CC
V
R
in
600 Ω
B or A
A or B
C
V
CC
/2
V
O
R
600 Ω
C
L
L
50 pF
V
C
GND
V
CC
/2
50 Ω
Figure 6. Crosstalk (Control Input − Switch Output)
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀꢁꢂ ꢃ ꢄꢅ ꢆꢇ ꢈ ꢉꢉ ꢊꢋ ꢇ
ꢀꢌ ꢁꢈ ꢄ ꢍ ꢎꢌ ꢄꢏꢐ ꢍꢑꢏꢄ ꢏꢁꢏ ꢄꢒ ꢈ ꢀ ꢓꢌ ꢐꢆ ꢔ
SCES499B − OCTOBER 2003 − REVISED JANUARY 2005
PARAMETER MEASUREMENT INFORMATION
V
CC
CC
V
0.1 µF
50 Ω
B or A
A or B
C
V
O
C
R
R
L
L
L
V
IL
V
C
f
in
(OFF)
GND
V
CC
/2
V
CC
/2
R /C : 600 Ω/50 pF
L
L
R /C : 50 Ω/5 pF
L
L
Figure 7. Feedthrough (Switch OFF)
V
CC
CC
V
10 µF
10 µF
B or A
A or B
C
V
O
C
R
10 kΩ
L
L
V
IH
50 pF
600 Ω
V
C
f
in
(ON)
GND
V
CC
/2
V
CC
V
CC
V
CC
V
CC
= 1.65 V, V = 1.4 V
P-P
I
= 2.3 V, V = 2 V
I
P-P
= 3 V, V = 2.5 V
I
P-P
P-P
= 4.5 V, V = 4 V
I
Figure 8. Sine-Wave Distortion
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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