TC213-40 [TI]
SPECIALTY ANALOG CIRCUIT, CDIP24, 2.54 MM PITCH, WINDOWED, CERAMIC, DIP-24;
| 型号： | TC213-40 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | SPECIALTY ANALOG CIRCUIT, CDIP24, 2.54 MM PITCH, WINDOWED, CERAMIC, DIP-24 CD |
| 文件： | 总21页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
DUAL-IN-LINE PACKAGE
(TOP VIEW)
•
High-Resolution, Solid-State
Frame-Transfer Image Sensor
•
•
13.5-mm Image-Area Diagonal
1
24
23
22
21
20
19
18
17
16
15
14
13
OUT1
AMP GND
OUT2
ADB
ABGS
SAG
ABGI
IAG
1000 (H) × 510 (V) Active Elements in
Image-Sensing Area
2
3
•
•
•
•
•
•
•
•
•
Square Pixels
4
Low Dark Current
5
SUB
SUB
TDB
SUB
SUB
IAG
Electron-Hole Recombination Antiblooming
Dynamic Range . . . More Than 60 dB
High Sensitivity
6
RST2
RST1
CDB
7
High Photoresponse Uniformity
High Blue Response
8
9
SRG1
SRG2
TRG
Single-Phase Clocking
10
11
12
ABGI
SAG
ABGS
Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
IDB
description
The TC213 is a frame-transfer charge-coupled device (CCD) image sensor that provides very high-resolution
image acquisition for image-processing applications such as robotic vision, medical X-ray analysis, and
metrology. The image format measures 12.00 mm horizontally by 6.12 mm vertically; the image-area diagonal
is 13.5 mm. The image-area pixels are 12-µm square. The image area contains 510 active lines with 1000 active
pixels per line. Two additional dark reference lines give a total of 512 lines in the image area, and 24 additional
dark-reference pixels per line give a total of 1024 pixels per horizontal line.
The storage section of the TC213 contains 512 lines with 1024 pixels per line. This area is protected from
exposure to light by an aluminum light shield. Photoelectric charge that is generated in the image area of the
TC213 can be transferred into the storage section in less than 500 µs. After image capture (integration time),
the readout is accomplished by transferring the charge, one line at a time, into two serial registers located below
the storage area, each of which contains 512 data elements and 12 dummy elements. One serial-register clocks
out charge that is generated in the odd-numbered columns of pixels in the imaging area; the other serial-register
processes charge from the even-numbered columns of the imaging area. The typical serial-register data rate
is 10 megapixels per second. Three transfer gates are used to isolate the serial registers. If the storage area
or storage and image areas need to be cleared of all charge, charge may be quickly transferred across the serial
registers and into the clearing drain, which is located below the serial-register section.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
Copyright 1991, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
2-1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
description (continued)
Gated floating-diffusion detection structures are used with each serial register to convert charge to signal
voltage. External resets allow the application of off-chip correlated clamp sample-and-hold amplifiers for
low-noise performance. To provide high output-drive capability, both outputs are buffered by low-noise,
two-stage, source-follower amplifiers. These two output signals can provide a data rate of 20 megapixels per
second when combined off chip. An output of 30 frames per second with one field per frame is typical. At room
temperature, the readout noise is 55 elecrons and a minimum dynamic range of 60 dB is available.
The blooming protection incorporated into the sensor is based on recombining excess charge with charge of
opposite polarity in the substrate. This antiblooming is activated by supplying clocking pulses to the
antiblooming gate, which is an integral part of each image-sensing element. The storage area antiblooming gate
is clocked only for charge transfer in normal use.
The TC213 is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark signal, good uniformity, and single-phase clocking.
The TC213 is characterized for operation from –10°C to 40°C.
functional block diagram
Top Drain
19
TDB
16
IAG
21
22
Image Area With
Blooming Protection
IAG
ABGI
SAG
15
ABGI
24 Dark Reference Elements
23
24
4
14
13
SAG
ABGS
ADB
Amplifiers
ABGS
6
Storage Area
RST2
3
7
1
IDB
12
OUT2
RST1
OUT1
10
9
SRG2
SRG1
Multiplexer, Transfer Gates,
and Serial Registers
11
TRG
Clearing Drain
12 Dummy
Elements
8
CDB
2
AMP GND
2-2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
sensor topology diagram
1000 Pixels
22 Pixels
1 Pixel
510 Lines
2 Lines
1 Pixel
512 Lines
Dummy Pixels
12
511
511
12
Terminal Functions
TERMINAL
NAME NO.
I/O
DESCRIPTION
†
†
ABGI
ABGI
15
22
13
24
4
I
I
I
I
I
Antiblooming gate for image area
Antiblooming gate for image area
Antiblooming gate for storage area
Antiblooming gate for storage area
Supply voltage for amplifier drain bias
Amplifier ground
†
ABGS
ABGS
ADB
†
AMP GND
CDB
2
8
I
I
Supply voltage for clearing drain bias
Image-area gate
†
IAG
IAG
16
21
12
1
†
I
Image-area gate
IDB
I
Supply voltage for input diode bias
Output signal 1
OUT1
OUT2
RST1
RST2
O
O
I
3
Output signal 2
7
Reset gate 1
6
I
Reset gate 2
†
†
SAG
SAG
14
23
9
I
Storage-area gate
I
Storage-area gate
SRG1
SRG2
I
Serial-register gate 1
10
5
I
Serial-register gate 2
†
†
†
†
SUB
SUB
SUB
SUB
Substrate and clock return
Substrate and clock return
Substrate and clock return
Substrate and clock return
Supply voltage for top drain bias
Transfer gate
17
18
20
19
11
TDB
TRG
I
I
†
All pins of the same name should be connected together externally (i.e., pin 15 to pin 22,
pin 13 to pin 24, etc.).
2-3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
detailed description
The TC213 consists of four basic functional blocks: (1) the image-sensing area, (2) the image-storage area,
(3) the multiplexer block with serial registers and transfer gates, and (4) the low-noise signal-processing
amplifier block with charge-detection nodes. The location of each of these blocks is identified in the functional
block diagram.
image-sensing and image-storage areas
Figures 1 and 2 show cross sections with potential well diagrams and top views of image-sensing elements. As
light enters the silicon in the image-sensing area, free electrons are generated and collected in the potential
wells of the sensing elements. During this time, blooming protection is activated by applying a burst of pulses
to the antiblooming gate inputs every horizontal blanking interval. This prevents blooming caused by the spilling
of charge from overexposed elements into neighboring elements. After integration is complete, the signal
charge is transferred into the storage area (see Figure 5).
There are 24 full columns of elements at the left edge of the image-sensing area that are shielded from incident
light; these elements provide the dark reference used in subsequent video-processing circuits to restore the
video black level. There are also two dark lines at the bottom of the image-sensing area that prevent charge
leakage from the image-sensing area into the image-storage area.
multiplexer with transfer gates and serial registers
The multiplexer and transfer gates transfer charge line by line from the image-storage area columns into the
corresponding serial registers and prepare it for readout. Figure 3 illustrates the layout of the multiplexing gate
that vertically separates the pixels for input into the serial registers. Figure 4 shows the layout of the interface
region between the serial-register gates and the transfer gates. Multiplexing is activated during the horizontal
blanking interval by applying appropriate pulses to the transfer gates and serial registers; the required pulse
timing is shown in Figure 6. A drain is also included to provide the capability to clear the image-sensing area
of unwanted charge. Such charge can accumulate in the imager during the start-up of operation or under special
circumstances when nonstandard timing is desired. The clear timing is given as part of the parallel-transfer
timing in Figure 5.
serial-register readout and video processing
After transfer into the serial registers, the pixels are normally read out 180° out of phase (see Figure 7). Each
serial register must be reset to the reference level before the next pixel is read out. The timing for the resets and
their relationships to the serial-register pulses is shown in Figure 8. Figure 8 also shows the timing for the pixel
clamp and sample and hold needed for an off-chip double-correlated sampling circuit. These two output signals
can provide a data rate of 20 million pixels per second when combined off chip. After the charge is placed on
the detection node, it is buffered and amplified by a low-noise, dual-stage source follower. Each serial register
contains 12 dummy elements that are used to span the distance between the serial register and the output
amplifier. A schematic is shown in Figure 9. The location of the dummy elements, which are considered to be
part of the amplifiers, is shown in the functional block diagram. Figure 10 gives the timing for a single frame of
video. An output of 30 frames per second with one field per frame is typical.
2-4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
Light
12 µm(H)
Clocked Barrier
φ-IAG
φ-ABG
Virtual Barrier
Antiblooming
Clocking Levels
12 µm(V)
Antiblooming Gate
Virtual Well
Clocked Well
Accumulated Charge
Figure 1. Charge-Accumulation Process
φ-PS
Clocked Phase
Virtual Phase
Channel Stops
Figure 2. Charge-Transfer Process
Channel Stops
Serial-
Register
Gate
Channel
Stop
Clocked
Wells
Virtual
Well
Clocked
Well
Multiplexing
Gate
Transfer
Gate
Figure 3. Multiplexing-Gate Layout
Figure 4. Interface-Region Layout
2-5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
1 µs
Line 1
Line 2
Line 511
Line 512
IAG
SAG
High
Intermediate
Intermediate
ABGI
Low
ABGS
TRG
†
SRG1
SRG2
†
RST1
RST2
High
High
†
SRG1 and SRG2 pulses are extended to equal TRG and SAG pulse widths during parallel transfers from the storage area to the
clearing drain.
Figure 5. Parallel-Transfer Timing
2-6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
CSYNC
CBLNK
TRG
†
†
SRG1
SRG2
RST1 High
RST2 High
CL1 Low
CL2 Low
SH1
SH2
Low
Low
SAG
ABGS
Intermediate
ABGI
CPOB1
CPOB2
IAG
Low
†
SRG1 and SRG2 pulses are extended to equal TRG and SAG pulse widths during horizontal line transfer operation for readout.
Figure 6. Horizontal Timing
2-7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
Dummy
Black Reference
2
Image
1
2
3
11
12
1
11
12
1
2
3
SRG2
SRG1
1
2
3
12
1
2
12
1
2
3
NOTE A: A minimum of 524 clock pulses is required to transfer out all elements of a serial register. Overclocking is recommended.
Figure 7. Start of Serial-Transfer Timing
2-8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
Sample-
and-Hold
Amplifier
OUT
Pixel
Clamp
CCD
Buffer
SRG
RST
CL
SH
SRG1
RST1
OUT1
CL1
SH1
SRG2
RST2
OUT2
CL2
SH2
NOTE A: The video-processing (off-chip) pulses are defined as follows:
CL1 = Clamp pulse for video from OUT1
CL2 = Clamp pulse for video from OUT2
SH1 = Sample pulse for the sample-and-hold amplifier for video 1
SH2 = Sample pulse for the sample-and-hold amplifier for video 2
CSYNC = Composite video-sync pulse
CBLNK = Composite video-blanking pulse
CPOB1 = Dark-reference clamp pulse for video from OUT1
CPOB2 = Dark-reference clamp pulse for video from OUT2
Figure 8. Video-Process Timing
2-9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
Reference Generator
ADB
Reset Gate
and
Output Diode
CCD Register
Detection Node
Two-Stage
Source-
Follower
Amplifier
Clocked Virtual
Gate
Gate
OUTn
SRGn
RSTn
Figure 9. Buffer Amplifier and Charge-Detection Node
2-10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
Horizontal
Timing
Vertical
Timing
IAG
SAG
TRG
541 Pulses
512 Pulses
SRG1
SRG2
ABGI
ABGS
RST1
RST2
CBLNK
Figure 10. Clock Timing Requirements – Continuous Mode
2-11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
spurious nonuniformity specification
The spurious nonuniformity specification of the TC213 CCD grades –30 and –40 is based on several sensor
characteristics:
•
•
Amplitude of the nonuniform line or pixel
Polarity of the nonuniform pixel
–
–
Black
White
•
Nonuniform line or pixel count
The CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition,
the nonuniformity is specified in terms of absolute amplitude as shown in Figure 11. In the illuminated condition,
the nonuniformity is specified as a percentage of the total illumination as shown in Figure 12.
The pixel nonuniformity specification for the TC213 is as follows (CCD video-output signal is 50 mV ±10 mV):
NONUNIFORMITY TYPE
TC213-30
TC213-40
Maximum amplitude = 1.4 mV
Line
Number with amplitude greater than 1 mV is ≤ 6
White spot (40°C)
White spot (25°C)
Maximum amplitude = 25 mV
Maximum amplitude = 8 mV
Maximum amplitude = 12 mV
Number with amplitude greater Number with amplitude greater
than 6 mV = B
than 10 mV = B
Maximum amplitude = 20%
Maximum amplitude = 25%
Black spot (% of total illumination)
Total number of nonuniformities
Number with amplitude greater Number with amplitude greater
than 10% = C
than 15% = C
B + C < 11
B + C < 51
mV
Amplitude
% of Total
Illumination
t
t
Figure 11. Pixel Nonuniformity,
Dark Condition
Figure 12. Pixel Nonuniformity,
Illuminated Condition
2-12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range for ADB, CDB, IDB, TDB (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 15 V
Input voltage range for ABGI, ABGS, IAG, RST1, RST2, SAG, SRG1, SRG2, TRG . . . . . . . . –15 V to 15 V
Operating free-air temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10°C to 40°C
A
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30°C to 85°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to the substrate terminal.
recommended operating conditions
MIN NOM
MAX
UNIT
V
Supply voltage for ADB, CDB, IDB, TDB
Substrate bias voltage
11
12
0
13
V
High level
1.5
–11
1.5
–11
1.5
–11
1.5
–11
5
2
2.5
–9
2.5
–9
2.5
–9
2.5
–9
6
IAG
Low level
High level
2
2
SAG
SRG
Low level
High level
Low level
‡
High level
2
Input voltage, V
I
V
RST1, RST2
ABGI, ABGS
Low level
High level (ABGI only)
5.5
§
Intermediate level
Low level
–1.5
–7.5
1.5
–1.2
–7
– 0.9
–6.5
2.5
High level
2
TRG
Low level
–11
–9
RST1, RST2, SRG1, SRG2, TRG
10
1
Clock frequency, f
Capacitive load
IAG, SAG
MHz
clock
ABGI, ABGS
OUT1, OUT2
1
8
pF
Operating free-air temperature, T
–10
40
°C
A
‡
The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage
levels.
§
Adjustment is required for optimal performance.
2-13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
electrical characteristics over recommended operating ranges of supply voltage and free-air
temperature
†
TYP
PARAMETER
MIN
MAX
UNIT
dB
Dynamic range (see Note 2)
Charge conversion factor
60
6
µV/e
Charge transfer efficiency (see Note 3)
0.99990
18
Signal response delay time, τ (see Note 4 and Figure 16)
Gamma (see Note 5)
20
0.94
600
0.1
0.08
60
22
0.99
800
ns
0.89
Output resistance
Ω
1/f noise (5 kHz)
µV/√Hz
electrons
Noise voltage
Random noise (f = 100 kHz)
Noise equivalent signal
ADB (see Note 6)
SRGn (see Note 7)
ABGx (see Note 8)
20
Rejection ratio at 10 MHz
Supply current
40
dB
30
9
mA
IAG, SAG
ABGI, ABGS
TRG
15000
8000
350
Input capacitance, C
pF
i
SRG1, SRG2
200
†
All typical values are at T = 25°C.
A
NOTES: 2. Dynamic range is –20 times the logarithm of the mean noise signal divided by the saturation output signal.
3. Charge transfer efficiency is one minus the charge loss per transfer in the output register (1046 transfers). The test is performed
in the dark using an electrical input signal.
4. Signal-response delay time is the time between the falling edge of the SRG clock pulse and the output signal valid state.
5. Gamma (γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer function curve (this
value represents points near saturation):
Exposure (2)
Exposure (1)
Output signal (2)
Output signal (1)
6. ADB rejection ratio is –20 times the logarithm of the ac amplitude on OUTn divided by the ac amplitude on ADB.
7. SRGn rejection ratio is –20 times the logarithm of the ac amplitude on OUTn divided by the ac amplitude on SRGn.
8. ABGx rejection ratio is –20 times the logarithm of the ac amplitude on OUTn divided by the ac amplitude on ABGx.
2-14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
optical characteristics, T = 25°C, integration time = 33 ms (unless otherwise noted)
A
PARAMETER
No IR filter
MIN
TYP
518
64
MAX
UNIT
Measured at V
(see Note 10)
U
Sensitivity (see Note 9)
mV/lx
With IR filter
Saturation signal, V
(see Note 11)
320
200
100
mV
mV
sat
Maximum usable signal, V
use
Blooming overload ratio (see Note 12)
Image-area well capacity
Smear (see Note 13)
3
60 x 10
electrons
0.0016
2
Dark current
T
A
= 21°C
0.027
nA/cm
TC213-30
TC213-40
TC213-30
TC213-40
TC213-30
TC213-40
5
5
Dark signal (see Note 14)
Pixel uniformity
T = 40°C
A
mV
8
mV
mV
12
1.4
1.4
15%
Column uniformity
Shading
V
O
= 1/2 V (see Note 10)
U
NOTES: 9. Sensitivity is measured at an integration time of 33 ms with a source temperature of 2859 K. A CM-500 filter is used. Sensitivity is
measured at any illumination level that gives an output voltage level less than V .
U
10.
V is the output voltage that represents the threshold of operation of antiblooming. V ≈ 1/2 saturation signal.
U U
11. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
12. Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming overload ratio
is the ratio of blooming exposure to saturation exposure.
13. Smear is the measure of error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent
to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the
image area vertical height with recommended clock frequencies. Exposure time is 33 ms, the fast dump clocking rate during vertical
timing is 1 MHz, and the illuminated section is 1/10 of the height of the image section.
14. Dark-signal level is measured from the dark dummy pixels.
timing requirements
MIN
200
10
MAX
UNIT
IAG
SRG
SAG
200
200
100
10
t
r
Rise time
ns
TRG
ABGI, ABGS
RST1, RST2
IAG
200
10
SRG
SAG
200
200
100
10
t
f
Fall time
ns
TRB
ABGI, ABGS
RST1, RST2
2-15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
PARAMETER MEASUREMENT INFORMATION
Blooming Point
With Antiblooming
Enabled
V
O
Blooming Point
With Antiblooming
Disabled
Dependent On
Well Capacity
V
sat (min)
Level Dependent
Upon Antiblooming
Gate High Level
V
use (max)
V
use (typ)
DR
V
n
Lux
(light input)
camera white clip voltage
DR (dynamic range)
V
n
V
V
= noise floor voltage
n
= minimum saturation voltage
sat (min)
V
= maximum usable voltage
use (max)
= typical user voltage (camera white clip)
V
use (typ)
NOTES: A.
V
is defined as the voltage determined to equal the camera white clip. This voltage must be less than V
.
use (typ)
use (max)
B. A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering the V
the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera.
,
use (typ)
Figure 13. Typical V , V
Relationship
sat use
2-16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
PARAMETER MEASUREMENT INFORMATION
100%
90%
V
IH
min
Intermediate Level
10%
V
IL
max
0%
t
r
t
f
Figure 14. Typical Clock Waveform for ABGI, ABGS, IAG, and SAG
100%
90%
V
IH
min
Intermediate Level
10%
V
IL
max
0%
t
f
t
r
Figure 15. Typical Clock Waveform for RST1, RST2, SRG1, SRG2, and TRG
1.5 V to 2.5 V
– 9 V to –11 V
SRG
– 9 V
0%
OUT
90%
100%
CCD Delay
τ
10 ns
15 ns
Sample
and
Hold
Figure 16. SRG and OUT Waveforms
2-17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
APPLICATION INFORMATION
V
SS
V
OUT
GND
V
V
CC
CC
GND
TMS3473B
20
1
2
3
4
5
6
7
8
9
V
IALVL
I/N
IAIN
ABIN
SS
Master Oscillator
CLK
19
18
17
16
15
14
13
12
11
V
IASR
ABSR
V
ABLVL
IAOUT
IAG
ABGI
GT1
CC
ABLVL
MIDSEL
SAIN
PD
CBLNK
CL2
CBLNK ABGS
CL2
CL1
V
GT2
SAG
ABOUT
SAOUT
CC
CL1
CSYNC
SH2
GND
2N3904
CSYNC RST2
V
V
CC
AGB+
10
12 V
OUT 2
1 kΩ
SH2
SH1
TRG
RST1
SRG1
SRG2
V
ABG –
V
V
ABG–
SS
SH1
Parallel Driver
100 Ω
V
ABG +
User-Defined Timer
TMS3473B
20
2N3904
1
2
3
4
5
6
7
8
9
IALVL
I/N
IAIN
ABIN
MIDSEL
SAIN
PD
V
SS
IASR
ABSR
19
18
17
16
15
14
13
12
11
12 V
V
OUT 1
100 Ω
V
CC
1 kΩ
ABLVL
IAOUT
ABOUT
SAOUT
ABLVL
V
CC
GND
V
V
AGB+
TC213
CC
10
V
V
V
SS
ABG –
ABG –
1
2
3
4
5
6
7
8
9
24
23
22
21
20
19
18
17
16
15
14
13
OUT1
ABGS
AMP GND SAG
Parallel Driver
V
OUT2
ADB
ABGI
IAG
ABG +
SN28846
SEL0OUT
GND
PD
SRG3IN
SRG2IN
SRG1IN
TRGIN
NC
SUB
SUB
TDB
SUB
SUB
IAG
ABGI
SAG
ABGS
12 V
RST2
RST1
CDB
SRG1
SRG2
TRG
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
V
SS
SEL0
NC
V
CC
10
11
12
V
CC
SRG3OUT
SRG2OUT
SRG1OUT
TRGOUT
IDB
12 V
Image Sensor
SEL1OUT
V
CC
10
V
SEL1
SS
Serial Driver
SN28846
SEL0OUT
DC VOLTAGES
ADB
12 V
5 V
–10 V
2 V
V
V
V
CC
SS
20
1
2
3
4
5
6
7
8
9
V
SS
19
18
17
16
15
14
13
12
11
GND
PD
SEL0
NC
V
CC
ABLVL
–2.5 V
4 V
–6 V
SRG3IN
SRG2IN
SRG1IN
TRGIN
NC
V
CC
V
V
SRG3OUT
SRG2OUT
SRG1OUT
TRGOUT
ABG+
ABG–
SEL1OUT
V
CC
SEL1
10
V
SS
Serial Driver
SUPPORT CIRCUITS
APPLICATION
Serial driver
DEVICE
PACKAGE
FUNCTION
SN28846DW
20 pin small outline
20 pin small outline
Driver for TRG, SRG1, SRG2, RST1, RST2
Driver for IAG, SAG, ABGI, ABGS
TMS3473BDW
Parallel driver
Figure 17. Typical Application Circuit Diagram
2-18
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
MECHANICAL DATA
The package for the TC213 consists of a ceramic base, a glass window, and a 24-lead frame. The glass window is
sealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line organization and
fit into mounting holes with 2,54 mm (0.1 in) center-to-center spacings.
30,91 (1.217)
30,05 (1.183)
2,54 (1.000)
2,67 (0.105) NOM
12,50 (0.492) NOM
4,93 (0.194) MAX
3,81 (0.150) NOM
0,33 (0.013)
0,17 (0.007)
2,00 (0.079)
NOM DIA
+0.01
(+0.0004)
6,80 (0.268)
5,80 (0.228)
23,29 (0.917)
22,43 (0.883)
20,93 (0.824)
20,83 (0.820)
22,83 (0.899)
22,38 (0.881)
3,75 (0.148)
2,75 (0.108)
Package Center
(see Note C)
Optical
Center
T.P.
20,93 (0.824)
20,83 (0.820)
1,40 (0.055)
0,64 (0.025)
6,30 (0.248)
4,70 (0.185)
2,54 (0.100)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
7/94
NOTES: A. Each pin centerline is located within 2,54 mm (0.1 inch) of its true longitudinal position.
B. The optical center line and the center line of the ceramic package are not coincident.
C. Maximum rotation is ±3.5°.
2-19
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
2-20
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998, Texas Instruments Incorporated
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