TCM1030 [TI]
DUAL TRANSIENT-VOLTAGE SUPPRESSORS; 双瞬态电压抑制器型号: | TCM1030 |
厂家: | TEXAS INSTRUMENTS |
描述: | DUAL TRANSIENT-VOLTAGE SUPPRESSORS |
文件: | 总8页 (文件大小:116K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TCM1030, TCM1050
DUAL TRANSIENT-VOLTAGE SUPPRESSORS
SCTS040B – JUNE 1989 – REVISED JUNE 1997
D OR P PACKAGE
(TOP VIEW)
Meet or Exceed Bell Standard LSSGR
Requirements
Externally-Controlled Negative Firing
Voltage . . . –90 V Max
TIP
TIP
1
2
3
4
8
7
6
5
V
GND
GND
RING
S
Accurately Controlled, Wide Negative
Firing Voltage Range . . . –5 V to –85 V
NC
RING
Positive Surge Current (see Note 1):
TCM1030
16 A
25 A
TCM1050
30 A
45 A
NC – No internal connection
The D package is available taped and
reeled. Add R suffix (i.e., TCM1030DR).
10/1000
10/160
2/10
35 A
50 A
Negative Surge Current (see Note 1):
TCM1030
–16 A
–25 A
TCM1050
–25 A
–29 A
10/1000
10/160
2/10
–35 A
–36 A
High Holding Current
– TCM1030 . . . 100 mA Min
– TCM1050 . . . 150 mA Min
description
The TCM1030 and TCM1050 dual transient-voltage suppressors are designed specifically for telephone line
cardprotectionagainstlightningandtransients(voltagetransients)inducedbyaclines. OneoftheTIPterminals
(pin 1 or 8) and one of the RING terminals (pin 4 or 5) are connected to the tip and ring circuits of a SLIC
(subscriber-line interface circuit). The battery feed connections between the SLIC and the subscriber line are
from the remaining TIP (pin 1 or 8) and RING (pin 4 or 5) through the TCM1030 or the TCM1050 to the tip and
ring lines. Transients are suppressed between tip and ground, and ring and ground.
Positivetransients are clamped by diodes D1 and D2. Negative transients that are more negative than V cause
S
the SCRs, Q1 and Q2, to crowbar. The high holding current of the SCRs prevent dc latchup as the transient
subsides.
The TCM1030 and TCM1050 are characterized for operation from –40°C to 85°C.
NOTE 1: The notation 10/1000 refers to a waveshape having t = 10 µs and t = 1000 µs ending at 50% of the peak value. The notation 10/160
r
w
is t = 10 µs and t = 160 µs. The notation 2/10 is t = 2 µs and t = 10 µs.
r
w
r
w
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TCM1030, TCM1050
DUAL TRANSIENT-VOLTAGE SUPPRESSORS
SCTS040B – JUNE 1989 – REVISED JUNE 1997
functional block diagram
1
8
TIP
TIP
D1
Trip
Q1
Q2
Circuit
7
6
GND
GND
2
V
S
Trip
Circuit
D2
4
5
RING
RING
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
TCM1030 nonrepetitive peak surge current (see Note 1): 10/1000 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±16 A
10/160 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25 A
2/10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35 A
TCM1050 nonrepetitive peak positive surge current:
(see Note 1)
10/1000 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 A
10/160 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 A
2/10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 A
10/1000 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 A
10/160 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –29 A
2/10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –36 A
TCM1050 nonrepetitive peak negative surge current:
(see Note 1)
Nonrepetitive peak surge current, t = 10 ms, half sinewave (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . 5 A
w
Continuous 60-Hz sinewave at 1 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 s
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 85°C
A
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 150°C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1 Thenotation 10/1000 refers to a waveshape having t = 10 µs and t = 1000 µsendingat50%ofthepeakvalue. Thenotation10/160
r w
is t = 10 µs and t = 160 µs. The notation 2/10 is t = 2 µs and t = 10 µs.
r
w
r
w
2. This value applies when the case temperature is at or below 85°C. The surge current may be repeated after the device has returned
to thermal equilibrium.
DISSIPATION RATING TABLE
T
≤ 25°C
OPERATING FACTOR
T = 85°C
A
POWER RATING
A
PACKAGE
POWER RATING
ABOVE T = 25°C
A
D
P
725 mW
5.8 mW/°C
8.0 mW/°C
377 mW
1000 mW
520 mW
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TCM1030, TCM1050
DUAL TRANSIENT-VOLTAGE SUPPRESSORS
SCTS040B – JUNE 1989 – REVISED JUNE 1997
electrical characteristics over operating free-air temperature range (unless otherwise noted)
TCM1030
TCM1050
PARAMETER
TEST CONDITIONS
UNIT
†
†
MIN TYP
MAX
MIN TYP
MAX
2
I
= 1-A transient
= 10-A transient
= 16-A transient
= 30-A transient
= 1-A transient
= 10-A transient
= 16-A transient
= 30-A transient
1.2
2.5
4
2
1.2
2
FM
FM
FM
FM
TM
TM
TM
TM
Forward clamping voltage
(diode forward voltage) (see
Note 3)
I
4
4
V
CF
V
I
5
2.5
5
I
—
—
—
3.1
5
I
–1.2
–2.5
–4
–2
–1.2
–2.5
–3
–2
–4
–5
–7
–325
Reverse clamping voltage
(SCR on-state voltage) (see
Note 3)
I
–4
V
C(R)
V
I
–5
I
—
–100
–100
–50
–65
—
—
—
–4.8
I
I
Trip current (see Note 4)
Holding current
V
V
V
V
V
= –50 V
–325 –100
–150
mA
mA
I(trip)
S
S
S
S
S
= –50 V
H
= –50 V, I = trip current
= –65 V, I = trip current
= –85 V, I = trip current
–55
–70
—
–50
–65
–85
–55
–70
–90
V
I(trip)
Trip voltage
V
—
TIP and RING at –85 V or GND,
I
Standby current
±5
±5
µA
I(stby)
V
S
= –85 V
Transient overshoot voltage
V
= –50 V, t = 10 ns
2.5
25
50
2.5
25
50
V
S
r
TIP and RING at –50 V
TIP and RING at GND
Off-state (high impedance)
capacitance
C
pF
off
Critical rate of rise of off-state
voltage (see Note 5)
dv/dt
V
S
open,
V
S
= –50 V
–1
–1
kV/µs
†
All typical values are at T = 25°C.
A
NOTES: 3. The current flows through one TIP (or RING) terminal and one of the GND terminals. The voltage is measured between the other
TIP (or RING) terminal and the other GND terminal. Measurement time ≤ 1 ms.
4. The negative value of trip current refers to the current flowing out of TIP or RING on the line side that is sufficient in magnitude to
trigger the SCRs. Measurement time ≤ 1 ns.
5. The critical dv/dt is measured using a linear rate of rise with the maximum voltage limited to –50 V with V connected to TIP or RING
S
being measured.
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TCM1030, TCM1050
DUAL TRANSIENT-VOLTAGE SUPPRESSORS
SCTS040B – JUNE 1989 – REVISED JUNE 1997
TYPICAL CHARACTERISTICS
TIP OR RING CURRENT
vs
TIP OR RING TO GND VOLTAGE
0.5
0.4
V
T
A
= –48 V
= 25°C
S
0.3
0.2
0.1
0
– 0.1
– 0.2
– 0.3
– 0.4
– 0.5
– 50 – 40 – 30 – 20 – 10
0
10 20 30 40 50
Tip or Ring to GND Voltage – V
Figure 1
APPLICATION INFORMATION
The trip voltage represents the most negative level of stress applied to the system. Positive transients are
clamped by diodes D1 and D2. When a negative transient is applied, current flows from V toTIPorRINGwhere
S
the transient voltage is applied. When the current through TIP or RING reaches the pulse-trip current, the SCR
turnsonandshortsTIPorRINGtoGND. Themajorityofthetransientenergyisdissipatedintheexternalresistor
(nominally 100 Ω for the TCM1030 and 70 Ω for the TCM1050). Current into V ceases when the SCR turns
S
on. WhentheenergyofthetransienthasbeendissipatedsothatthecurrentintoTIPorRINGduetothetransient
plus the battery feed supply is less than the holding current, the SCR turns off.
To help ensure reliability and consistency in the firing voltage, it is recommended that two capacitors be
connectedbetweenV andGND, asclosetothedeviceterminalsaspossible. Onecapacitorshouldbea0.1-µF,
S
100-V ceramic unit and the other, a 0.47-µF, 100-V stacked-film (not wound) metalized plastic capacitor. If
inductance is present in the line to V , these capacitors help prevent overshoot in the firing voltage during fast
S
rise-time transients.
To avoid dc latchup after the SCR has fired, the current must be less than the holding current, I . To prevent
H
dc latchup, the line feed current must be limited to the following conditions:
V
R
V
TP
RP
2R
I
H
p
line
where V and V are the voltages on TIP and RING, respectively, of the TCM1030 or TCM1050. Induced ac
TP
RP
currents into TIP or RING (e.g., power-line inductive coupling) must be less than the trip current to prevent the
SCR from firing.
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TCM1030, TCM1050
DUAL TRANSIENT-VOLTAGE SUPPRESSORS
SCTS040B – JUNE 1989 – REVISED JUNE 1997
APPLICATION INFORMATION
Line short-circuits to external power sources can damage the suppressor due to excessive power dissipation.
Conventionalprotectiontechniques, suchasfusesorPTC(positivetemperaturecoefficient)thermistors, should
be used to eliminate or reduce the fault current.
Figure 2 shows a typical line card application circuit.
T
TIP
Control
1
8
7
6
5
TP
TIP
TIP
Subscriber Line
Interface Circuit
(SLIC)
R
R
(see Note A)
P
P
TCM1030,
TCM1050
GND
Receive
Voice
2
4
V
S
GND
(see Note A)
RP
R
RING
RING
Transmit
Voice
RING
V
BAT
GND
0.47 µF
(see Note B)
0.1 µF
(see Note C)
48 V
NOTES: A.
R is 100 Ω minimum for TCM1030 and 70 Ω minimum for TCM1050.
P
B. 0.47 µF, 100 V stacked film metalized plastic capacitor
C. 0.1 µF, 100 V ceramic capacitor
Figure 2. Typical Line Card Application Circuit
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TCM1030, TCM1050
DUAL TRANSIENT-VOLTAGE SUPPRESSORS
SCTS040B – JUNE 1989 – REVISED JUNE 1997
MECHANICAL DATA
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PIN SHOWN
PINS **
0.050 (1,27)
8
14
16
DIM
0.020 (0,51)
0.014 (0,35)
0.010 (0,25)
0.197
(5,00)
0.344
(8,75)
0.394
(10,00)
M
A MAX
14
8
0.189
(4,80)
0.337
(8,55)
0.386
(9,80)
A MIN
0.244 (6,20)
0.228 (5,80)
0.008 (0,20) NOM
0.157 (4,00)
0.150 (3,81)
Gage Plane
1
7
A
0.010 (0,25)
0°–8°
0.044 (1,12)
0.016 (0,40)
Seating Plane
0.004 (0,10)
0.010 (0,25)
0.004 (0,10)
0.069 (1,75) MAX
4040047/D 10/96
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
D. Falls within JEDEC MS-012
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TCM1030, TCM1050
DUAL TRANSIENT-VOLTAGE SUPPRESSORS
SCTS040B – JUNE 1989 – REVISED JUNE 1997
MECHANICAL DATA
P (R-PDIP-T8)
PLASTIC DUAL-IN-LINE PACKAGE
0.400 (10,60)
0.355 (9,02)
8
5
0.260 (6,60)
0.240 (6,10)
1
4
0.070 (1,78) MAX
0.310 (7,87)
0.290 (7,37)
0.020 (0,51) MIN
0.200 (5,08) MAX
Seating Plane
0.125 (3,18) MIN
0.100 (2,54)
0°–15°
0.021 (0,53)
0.015 (0,38)
0.010 (0,25)
M
0.010 (0,25) NOM
4040082/B 03/95
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Falls within JEDEC MS-001
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
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any product or service without notice, and advise customers to obtain the latest version of relevant information
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subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
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BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
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party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998, Texas Instruments Incorporated
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