THN5602F [TI]

NPN SiGe RF POWER TRANSISTOR; NPN硅锗RF功率晶体管


型号：	THN5602F
厂家：	TEXAS INSTRUMENTS
描述：	NPN SiGe RF POWER TRANSISTOR NPN硅锗RF功率晶体管晶体晶体管
文件：	总6页 (文件大小：281K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

THN5602F

SOT-89

NPN SiGe RF POWER

TRANSISTOR

The THN5602F is a low cost, NPN medium power

SiGe HBT(Hetero-Junction Bipolar Transistor)

encapsulated in a plastic SOT-89 SMD package.

The THN5602F can be used as a driver device or

an output device, depending on the specific app-

lication.

□ FEATURES

o 4.8 Volt operation

o P1dB 28 dBm @f=465MHz

o Power gain 10 dB @f=465MHz

Unit : m m

PIN CONFIGURATION

PIN NO

SYMBOL

DESCRIPTION

□ APPLICATIONS

base

collector

emitter

o Hand-held radio equipment in common

emitter class-AB operation in 450 MHz

communication band.

collector

□ MAXIMUM RATINGS

SYMBOL

PARAMETER

CONDITION

VALUE

UNIT

℃

VCBO

VCEO

V^EBO

T^STG

T^J

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Total Power Dissipation

Storage Temperature

Open Emitter

Open Base

Open Collector

350

-65 ~ 150

150

Ts = 60℃ ; note 1

Operating Juction Temperature

Sep-2003

Rev 1.1

www.tachyonics.co.kr

-1/6-

THN5602F

□ THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITION

VALUE

UNIT

thermal resistance from junction

to soldering point

K/W

Rth j-s

PT=1W; Ts=60℃;note1

* Note 1. Ts is temperature at the soldering point of the collector pin.

□ QUICK REFERENCE DATA

RF performance at Ts ≤ 60 ℃ in common emitter test circuit (see Fig 6.)

Mode of Operation

f [MHz]

VCE [V]

PL [mW]

G^P[dB]

≥ 10

ηC [%]

CW, class-AB

465

4.8

630

≥ 60

Sep-2003

Rev 1.1

www.tachyonics.co.kr

-2/6-

THN5602F

□ DC CHARACTERISTICS

Tj=25 ℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITION

open emitte

MIN.

MAX. UNIT

BV^CBO

BV^CEO

BV^EBO

I^S

collector-base breakdown voltage

collector-emitter breakdown voltage

emitter-base breakdown voltage

collector leakage current

open base

open collector

0.1

200

h^FE

DC current gain

4.5

collector capacitance

160

140

120

100

Hfe

[pF]

V^CB[V]

0.00

0.10

0.20

0.30

0.40

0.50

Ic(A)

f=900M Hz; VCE=4.8V; ICQ=5m A; Ts < 60℃

VCE = 4.8V ; Tj =25℃

Fig 1. DC Current gain v.s collector current

Fig 2. Collector-base capacitance v.s collector-

base voltage(DC)

Sep-2003

Rev 1.1

www.tachyonics.co.kr

-3/6-

THN5602F

□ APPLICATION INFORMATION

RF performance at Ts ≤ 60 ℃ in common emitter configuration.

Mode of Operation

f [MHz]

V^CE[V]

PL [mW]

G^P[dB]

ηC [%]

CW, class-AB

465

4.8

630

≥ 10

≥ 60

THN5602F Source/Load Impedance as a frequency

V^CE= 4.8V, ICQ = 5mA, Pout = 28dBm

THN5602F Transistor Impedance

Z_S[Ω]

Freq.

[MHz]

440

450

460

Z^L[Ω]

R^L

17.34

17.21

17.12

17.09

6.91

7.89

8.90

9.95

22.21

19.31

17.20

-0.59

2.58

7.07

470

15.66 19.00

Z_S

[Ω]

Z_L

R_L

[Ω]

X_L

-5

-10

430

440

450

460

470

480

430

440

450

460

470

480

Freq[M Hz]

Freq [M Hz]

Fig 3. Source Impedance (series components) as

a freq, typical values.

Fig 4. Load Impedance (series components) as

a freq, typical values.

Sep-2003

Rev 1.1

www.tachyonics.co.kr

-4/6-

THN5602F

Part List

Vcc

C1, C7,C10,C11

C3,C4

470pF

6pF

8pF

C9,C12

7pF

12pF

1nF

RF_OUT

RF IN

C8,C13

100nF

8.2nH

3turn

8turn

2 mm

L1(Chip L : 1608)

L2,L3,L4 (Air Coil)

L5,L6 (Air Coil)

Air Coil Diameter

: Air Coil

79.5

Unit : m m

Fig 5. THN5602F Test Circuit Board Layout @ f = 465MHz

Test board : FR4 glass epoxy board, dielectric constant = 4.5, thickness = 0.8 mm

Test condition : CW test, V^CC= 4.8 V, ICQ = 5 mA, frequency = 465 MHz.

THN5602F

THN5602F Test Circuit Schem atic Diagram

Fig 6. Test Circuit Schematic Diagram @f = 465MHz

Sep-2003

Rev 1.1

www.tachyonics.co.kr

-5/6-

THN5602F

□ PACKAGE DIMENSION

Fig 7. SOT-89 Package dimension

Sep-2003

Rev 1.1

www.tachyonics.co.kr

-6/6-

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