THS6042IDDARG3 [TI]

DUAL LINE DRIVER, PDSO8, GREEN, PLASTIC, SOIC-8;
THS6042IDDARG3
型号: THS6042IDDARG3
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

DUAL LINE DRIVER, PDSO8, GREEN, PLASTIC, SOIC-8

驱动 光电二极管 接口集成电路 驱动器
文件: 总44页 (文件大小:1548K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ꢀ ꢁꢂꢃ ꢄ ꢅ ꢆ ꢇ ꢀꢁ ꢂ ꢃꢄ ꢅꢈ  
ꢈ ꢉ ꢄ ꢊꢋꢇ ꢌ ꢆ ꢍ ꢋꢎꢂ ꢏ ꢐꢑꢒ ꢏ ꢓꢔꢒ ꢎ ꢕꢓ ꢍ ꢒꢕ ꢂ  
SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
D
D
Remote Terminal ADSL Line Driver  
− Ideal for Both Full Rate ADSL and G.Lite  
− Compatible With 1:1 Transformer Ratio  
D
High Speed  
− 120 MHz (−3 dB, G=1, 12 V, R = 25 )  
− 1200 V/µs Slew Rate (G = 4, 12 V)  
Low Distortion, Single-Ended, G = 4  
− −79 dBc (250 kHz, 2 V , 100-load)  
Low Power Shutdown (THS6043)  
− 300-µA Total Standby Current  
L
Low 2.1 pA/Hz Noninverting Current Noise  
− Reduces Noise Feedback Through  
Hybrid Into Downstream Channel  
D
D
D
D
D
pp  
D
D
Wide Supply Voltage Range 5 V to 15 V  
− Ideal for 12-V Operation  
Thermal Shutdown and Short-Circuit  
Protection  
Wide Output Swing  
− 43-Vpp Differential Output Voltage,  
Standard SOIC, SOIC PowerPADand  
TSSOP PowerPADPackage  
Evaluation Module Available  
R = 200 , 12-V Supply  
L
D
High Output Current  
− 350 mA (typ)  
THS6043  
SOIC (D) AND  
TSSOP PowerPAD(PWP) PACKAGE  
(TOP VIEW)  
THS6042  
SOIC (D) AND  
SOIC PowerPAD(DDA) PACKAGE  
(TOP VIEW)  
D1 OUT  
D1 IN−  
D1 IN+  
V
CC+  
1
2
3
4
5
6
7
14  
D1 OUT  
D1 IN−  
D1 IN+  
V
CC+  
1
2
3
4
8
7
6
5
13 D2 OUT  
12 D2 IN−  
11 D2 IN+  
D2 OUT  
D2 IN−  
D2 IN+  
V
CC−  
N/C  
V
CC−  
10  
9
N/C  
GND  
N/C  
SHUTDOWN  
N/C  
8
description  
The THS6042/3 is a high-speed line driver ideal for driving signals from the remote terminal to the central office  
in asymmetrical digital subscriber line (ADSL) applications. It can operate from a 12-V supply voltage while  
drawing only 8.2 mA of supply current per channel. It offers low –79 dBc total harmonic distortion driving a 100-Ω  
load (2 Vpp). The THS6042/3 offers a high 43-Vpp differential output swing across a 200-load from a 12-V  
supply. The THS6043 features a low-power shutdown mode, consuming only 300 µA quiescent current per  
channel. The THS6042/3 is packaged in standard SOIC, SOIC PowerPAD, and TSSOP PowerPAD packages.  
+12 V  
THS6042  
RELATED PRODUCTS  
Driver 1  
50 Ω  
+
_
V +  
I
1:1  
DEVICE  
DESCRIPTION  
750 Ω  
175-mA, 12 ADSL CPE line driver  
THS6052/3  
THS6092/3  
OPA2677  
THS6062  
15.7 dBm  
Delivered  
to Telephone  
Line  
275-mA, +12 V ADSL CPE line driver  
100 Ω  
THS6042  
Driver 2  
380-mA, +12 V ADSL CPE line driver  
15 V to 5 V Low noise ADSL receiver  
6 V to 5 V Low noise ADSL receiver  
210 Ω  
50 Ω  
+
_
V −  
I
0.68 µF  
OPA2822  
750 Ω  
−12 V  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PowerPAD is a trademark of Texas Instruments.  
ꢀꢢ  
Copyright 2001, Texas Instruments Incorporated  
ꢞ ꢢ ꢟ ꢞꢘ ꢙꢬ ꢛꢚ ꢝ ꢥꢥ ꢣꢝ ꢜ ꢝ ꢊ ꢢ ꢞ ꢢ ꢜ ꢟ ꢧ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
ꢀ ꢁꢂ ꢃ ꢄꢅ ꢆ ꢇ ꢀ ꢁ ꢂꢃꢄ ꢅ ꢈ  
ꢈꢉ ꢄ ꢊ ꢋ ꢇ ꢌ ꢆ ꢍ ꢋꢎ ꢂꢏ ꢐꢑ ꢒ ꢏꢓ ꢔ ꢒ ꢎꢕ ꢓ ꢍꢒ ꢕꢂ  
SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
AVAILABLE OPTIONS  
PACKAGED DEVICE  
EVALUATION  
MODULES  
T
A
SOIC-8  
(D)  
SOIC-8 PowerPAD  
(DDA)  
SOIC-14  
(D)  
TSSOP-14  
(PWP)  
THS6042EVM  
THS6043EVM  
0°C to 70°C  
THS6042CD  
THS6042ID  
THS6042CDDA  
THS6042IDDA  
THS6043CD  
THS6043ID  
THS6043CPWP  
THS6043IPWP  
40°C to 85°C  
absolute maximum ratings over operating free-air temperature (unless otherwise noted)  
Supply voltage, V  
to V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V  
CC+  
CC−  
Input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
V
CC  
Output current (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mA  
Differential input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 V  
Maximum junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C  
Total power dissipation at (or below) 25°C free-air temperature . . . . . . . . . . . See Dissipation Ratings Table  
Operating free-air temperature, T : Commercial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C  
A
Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 85°C  
Storage temperature, T : Commercial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 125°C  
stg  
Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 125°C  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTE 1: The THS6042 and THS6043 may incorporate a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected  
to a thermally dissipating plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature  
which could permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing the PowerPAD  
thermally enhanced package.  
DISSIPATION RATING TABLE  
T
= 25°C  
A
PACKAGE  
θ
JA  
θ
JC  
T = 150°C  
J
POWER RATING  
1.32 W  
D-8  
DDA  
D-14  
PWP  
95°C/W  
45.8°C/W  
66.6°C/W  
38.3°C/W  
9.2°C/W  
26.9°C/W  
2.73 W  
1.88 W  
37.5°C/W  
1.4°C/W  
3.3 W  
This data was taken using the JEDEC proposed high-K test PCB. For the JEDEC low-K test  
PCB, the Θ is168°C/W for the D−8 package and 122.3°C/W for the D−14 package.  
JA  
2
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ꢀ ꢁꢂꢃ ꢄ ꢅ ꢆ ꢇ ꢀꢁ ꢂ ꢃꢄ ꢅꢈ  
ꢈ ꢉ ꢄ ꢊꢋꢇ ꢌ ꢆ ꢍ ꢋꢎꢂ ꢏ ꢐꢑꢒ ꢏ ꢓꢔꢒ ꢎ ꢕꢓ ꢍ ꢒꢕ ꢂ  
SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
recommended operating conditions  
MIN NOM  
MAX  
15  
UNIT  
Dual supply  
Single supply  
C-suffix  
5
10  
Supply voltage, V  
CC+  
to V  
CC−  
V
30  
0
70  
Operating free-air temperature, T  
°C  
A
I-suffix  
−40  
85  
electrical characteristics over recommended operating free-air temperature range, T = 25°C,  
A
V
= 12 V, R  
= 750 , R = 100 (unless otherwise noted)  
CC  
(FEEDBACK)  
L
dynamic performance  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
120  
95  
MAX  
UNIT  
G = 1, R = 560 Ω  
F
R
R
R
= 25 Ω  
= 100 Ω  
= 25 Ω  
G = 2, R = 500 Ω  
V
CC  
=
=
6 V, 12 V  
6 V, 12 V  
L
L
L
F
Small-signal bandwidth  
(3 dB)  
BW  
G = 4, R = 390 Ω  
75  
MHz  
F
G = 4, R = 390 Ω  
100  
65  
F
V
CC  
G = 8, R = 280 Ω  
F
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
=
=
=
=
=
15 V  
12 V  
6 V  
1000  
900  
600  
1400  
1200  
G = 2, R = 390 Ω,  
F
V
= 5 V  
O
pp  
SR  
Slew rate (see Note 2)  
V/µs  
15 V  
12 V  
G = 4, R = 750 Ω,  
F
V
O
= 12 V  
pp  
R
= 100 Ω  
L
G = 4, R = 750 Ω,  
F
V
CC  
=
6 V  
600  
V
O
= 5 V  
pp  
NOTE 2: Slew rate is defined from the 25% to the 75% output levels.  
noise/distortion performance  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP MAX  
79  
UNIT  
V
= 2 V  
= 16 V  
= 2 V  
= 7 V  
G = 4,  
R
= 100 Ω,  
O(pp)  
O(pp)  
O(pp)  
O(pp)  
L
Total harmonic distortion  
(single-ended configuration)  
(R = 390 )  
V
CC  
=
12 V, f = 250 kHz  
V
V
V
75  
THD  
dBc  
72  
G = 4,  
R
= 25 Ω,  
6 V, f = 250 kHz  
L
F
V
V
=
=
CC  
68  
V
n
Input voltage noise  
+Input  
6 V, 12 V  
f = 10 kHz  
2.2  
2.1  
11  
nV/Hz  
pA/Hz  
CC  
I
n
Input current noise  
V
CC  
=
6 V, 12 V, 15 V  
f = 10 kHz  
−Input  
f = 250 kHz ,  
= 430 ,  
V
R
=
6 V, 12 V,  
CC  
L
71  
65  
R
= 100 Ω  
F
Crosstalk  
V
O
= 2 Vpp, G = 4  
dBc  
f = 250 kHz ,  
= 390 ,  
V
CC  
= 6 V, 12 V,  
R
R = 25 Ω  
L
F
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
ꢀ ꢁꢂ ꢃ ꢄꢅ ꢆ ꢇ ꢀ ꢁ ꢂꢃꢄ ꢅ ꢈ  
ꢈꢉ ꢄ ꢊ ꢋ ꢇ ꢌ ꢆ ꢍ ꢋꢎ ꢂꢏ ꢐꢑ ꢒ ꢏꢓ ꢔ ꢒ ꢎꢕ ꢓ ꢍꢒ ꢕꢂ  
SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
electrical characteristics over recommended operating free-air temperature range, T = 25°C,  
A
V
= 12 V, R  
= 750 , R = 100 (unless otherwise noted) (continued)  
CC  
(FEEDBACK) L  
dc performance  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
16  
21  
5
UNIT  
T
A
= 25°C  
9.5  
Input offset voltage  
T
= full range  
= 25°C  
A
mV  
T
A
1
V
V
=
=
6 V, 12 V  
OS  
CC  
CC  
Differential offset voltage  
Offset drift  
T
= full range  
= full range  
= 25°C  
7
A
T
A
20  
µV/°C  
T
A
3.5  
10  
12  
5
− Input bias current  
+ Input bias current  
T
= full range  
= 25°C  
A
T
A
1
3.5  
1
I
IB  
V
6 V, 12 V  
µA  
T
= full range  
= 25°C  
6
A
T
A
10  
12  
Differential input bias current  
Open-loop transimpedance  
T
A
= full range  
Z
OL  
R
= 1 kΩ  
V =  
CC  
6 V, 12 V  
MΩ  
L
input characteristics  
PARAMETER  
TEST CONDITIONS  
MIN  
9.6  
9.5  
3.7  
3.6  
59  
TYP  
MAX  
UNIT  
T
= 25°C  
10.1  
A
V
CC  
V
CC  
V
CC  
=
=
=
12 V  
T
A
= full range  
= 25°C  
V
ICR  
Input common-mode voltage range  
V
T
A
4.2  
68  
6V  
T
A
= full range  
= 25°C  
T
A
CMRR Common-mode rejection ratio  
6 V, 12 V  
V
T
A
= full range  
55  
+ Input  
− Input  
1.5  
15  
2
MΩ  
R
C
Input resistance  
I
i
Input capacitance  
pF  
output characteristics  
PARAMETER  
TEST CONDITIONS  
MIN  
7.5  
TYP  
9.1  
MAX  
UNIT  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
=
=
=
=
=
=
=
12 V  
6 V  
R
R
= 25 Ω  
L
L
4.1  
4.6  
Single ended  
100-mV overdrive  
V
O
Output voltage swing  
V
12 V  
6 V  
10.3  
4.5  
10.8  
4.9  
= 100 Ω  
R
R
R
= 25 ,  
= 10 ,  
= 0 Ω,  
12 V  
6 V  
300  
230  
350  
260  
400  
15  
L
L
L
I
I
Output current  
mA  
O
Short-circuit current  
Output resistance  
12 V  
mA  
OS  
r
Open loop  
o
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
ꢀ ꢁꢂꢃ ꢄ ꢅ ꢆ ꢇ ꢀꢁ ꢂ ꢃꢄ ꢅꢈ  
ꢈ ꢉ ꢄ ꢊꢋꢇ ꢌ ꢆ ꢍ ꢋꢎꢂ ꢏ ꢐꢑꢒ ꢏ ꢓꢔꢒ ꢎ ꢕꢓ ꢍ ꢒꢕ ꢂ  
SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
electrical characteristics over recommended operating free-air temperature range, T = 25°C,  
A
V
= 12 V, R  
= 750 , R = 100 (unless otherwise noted) (continued)  
CC  
(FEEDBACK) L  
power supply  
PARAMETER  
TEST CONDITIONS  
MIN  
4.5  
9
TYP  
MAX  
16.5  
33  
UNIT  
Dual supply  
V
CC  
Operating range  
V
Single supply  
T
= 25°C  
8.2  
7.4  
10.5  
11.5  
9.5  
A
V
CC  
V
CC  
V
CC  
V
CC  
=
=
=
=
12 V  
6 V  
T
A
= full range  
= 25°C  
Quiescent current (each driver)  
Power supply rejection ratio  
I
mA  
dB  
CC  
T
A
T
A
= full range  
= 25°C  
10.5  
T
A
−65  
−62  
−62  
−60  
72  
69  
12 V  
6 V  
T
A
= full range  
= 25°C  
PSRR  
T
A
T
A
= full range  
shutdown characteristics (THS6043 only)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
V
=
6 V, 12 V, GND = 0 V  
CC  
V
V
Shutdown pin voltage for power up  
Shutdown pin voltage for power down  
0.8  
V
IL(SHDN)  
(GND Pin as Reference)  
6 V, 12 V, GND = 0 V  
(GND pin as reference)  
V
CC  
=
2
V
IH(SHDN)  
I
t
t
I
I
Total quiescent current when in shutdown state  
Disable time (see Note 3)  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
=
=
=
=
=
6 V, 12 V  
12 V  
0.3  
0.5  
0.2  
40  
0.7  
mA  
µs  
CC(SHDN)  
DIS  
Enable time (see Note 3)  
12 V  
µs  
EN  
Shutdown pin input bias current for power up  
Shutdown pin input bias current for power down  
6 V, 12 V  
6 V, 12 V V  
100  
100  
µA  
µA  
IL(SHDN)  
= 3.3 V  
50  
IH(SHDN)  
(SHDN)  
NOTE 3: Disable/enable time is defined as the time from when the shutdown signal is applied to the SHDN pin to when the supply current has  
reached half of its final value.  
5
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
TYPICAL CHARACTERISTICS  
Table of Graphs  
FIGURE  
Small and large signal output  
vs Frequency  
1 − 6  
7, 8, 9  
13, 14, 15  
vs Output voltage  
Harmonic distortion  
10, 11, 12,  
16, 17, 18  
vs Frequency  
V
I
Voltage noise and current noise  
Quiescent current  
vs Frequency  
19  
20  
21  
22  
23  
24  
25  
n, n  
vs Free-air temperature  
vs Free-air temperature  
vs Free-air temperature  
vs Output current  
V
V
V
Positive output voltage headroom  
Negative output voltage headroom  
Output voltage headroom  
O
z
Closed loop output impedance  
Quiescent current in shutdown mode  
vs Frequency  
o
vs Free-air temperature  
Input offset voltage and  
differential input offset voltage  
V
IO  
vs Free-air temperature  
26  
I
Input bias current  
vs Free-air temperature  
vs Frequency  
27  
28  
IB  
CMRR Common-mode rejection ratio  
Crosstalk  
vs Frequency  
29  
SR  
Slew rate  
vs Output voltage step  
30  
Shutdown response  
31  
Transimpedance and phase  
Overdrive recovery  
vs Frequency  
32  
33, 34  
35, 36  
Small and large signal pulse response  
6
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
TYPICAL CHARACTERISTICS  
SMALL AND LARGE SIGNAL OUTPUT  
SMALL AND LARGE SIGNAL OUTPUT  
vs  
vs  
FREQUENCY  
FREQUENCY  
24  
18  
24  
18  
V
= 8 V  
O
O
PP  
PP  
PP  
V
= 8 V  
O
O
PP  
PP  
V
= 12 V  
CC  
G = 4  
R = 750 Ω  
V
= 12 V  
CC  
G = 4  
R = 390 Ω  
12  
6
12  
6
f
f
R
= 100 Ω  
V
= 2 V  
L
R = 100 Ω  
V
= 2 V  
L
0
−6  
0
−6  
V
= 0.5 V  
O
V
= 0.5 V  
PP  
O
−12  
−12  
V
O
= 0.125 V  
100 K  
PP  
V
O
= 0.125 V  
100 K  
PP  
−18  
−24  
−18  
−24  
10 K  
10 M  
100 M  
1 M  
1 G  
10 K  
10 M  
100 M  
1 M  
1 G  
f − Frequency − Hz  
f − Frequency − Hz  
Figure 1  
Figure 2  
SMALL AND LARGE SIGNAL OUTPUT  
SMALL AND LARGE SIGNAL OUTPUT  
vs  
vs  
FREQUENCY  
FREQUENCY  
30  
24  
30  
24  
V
= 16 V  
O
PP  
PP  
PP  
V
= 16 V  
O
PP  
PP  
V
= 12 V  
CC  
G = 8  
R = 280 Ω  
V
= 12 V  
CC  
G = 8  
R = 750 Ω  
18  
12  
18  
12  
f
f
R
= 100 Ω  
V
= 4 V  
L
R = 100 Ω  
O
V
= 4 V  
L
O
6
0
6
0
V
= 1 V  
O
V
= 1 V  
PP  
O
−6  
−6  
V
O
= 0.25 V  
100 K  
PP  
V
O
= 0.25 V  
100 K  
PP  
−12  
−18  
−12  
−18  
10 K  
10 M  
100 M  
1 M  
1 G  
10 K  
10 M  
100 M  
1 M  
1 G  
f − Frequency − Hz  
f − Frequency − Hz  
Figure 3  
Figure 4  
7
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
TYPICAL CHARACTERISTICS  
SMALL AND LARGE SIGNAL OUTPUT  
SMALL AND LARGE SIGNAL OUTPUT  
vs  
vs  
FREQUENCY  
FREQUENCY  
24  
18  
24  
18  
V
= 8 V  
O
O
PP  
PP  
V
= 8 V  
O
O
PP  
PP  
V
= 6 V  
CC  
G = 4  
R = 750 Ω  
V
= 6 V  
CC  
G = 4  
R = 390 Ω  
12  
6
12  
6
f
f
R
= 25 Ω  
V
= 2 V  
L
R = 25 Ω  
V
= 2 V  
L
0
−6  
0
−6  
V
O
= 0.5 V  
PP  
V
O
= 0.5 V  
PP  
−12  
−12  
V
O
= 0.125 V  
100 K  
PP  
V
O
= 0.125 V  
100 K  
PP  
−18  
−24  
−18  
−24  
10 K  
10 M  
100 M  
1 M  
1 G  
10 K  
10 M  
100 M  
1 M  
1 G  
f − Frequency − Hz  
f − Frequency − Hz  
Figure 5  
Figure 6  
HARMONIC DISTORTION  
vs  
HARMONIC DISTORTION  
vs  
OUTPUT VOLTAGE  
OUTPUT VOLTAGE  
−70  
−75  
−80  
−85  
−90  
−95  
−100  
−70  
−75  
−80  
−85  
−90  
−95  
−100  
2nd Order  
2nd Order  
V
=
10 V  
Gain = 4  
= 100 Ω  
CC  
V
=
15 V  
Gain = 4  
= 100 Ω  
CC  
R
L
R
L
R = 390 Ω  
f = 250 KHz  
f
R = 390 Ω  
f = 250 KHz  
f
3rd Order  
3rd Order  
0
2
4
6
8
10  
12  
14  
16  
0
2
4
6
8
10  
12  
14  
16  
V
O
− Output Voltage − V  
V
O
− Output Voltage − V  
PP  
PP  
Figure 7  
Figure 8  
8
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ꢈ ꢉ ꢄ ꢊꢋꢇ ꢌ ꢆ ꢍ ꢋꢎꢂ ꢏ ꢐꢑꢒ ꢏ ꢓꢔꢒ ꢎ ꢕꢓ ꢍ ꢒꢕ ꢂ  
SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
TYPICAL CHARACTERISTICS  
HARMONIC DISTORTION  
HARMONIC DISTORTION  
vs  
vs  
OUTPUT VOLTAGE  
FREQUENCY  
−70  
−75  
−80  
−30  
−40  
−50  
−60  
−70  
−80  
V
=
5.4 V  
Gain = 4  
= 100 Ω  
CC  
V
=
15 V  
CC  
Gain = 4  
= 100 Ω  
R
2nd Order  
L
R
L
2nd Order  
R = 390 Ω  
f = 250 KHz  
f
R = 390 Ω  
f
V
O
= 2 V  
PP  
−85  
−90  
3rd Order  
−95  
−90  
3rd Order  
5
−100  
−100  
0
1
2
3
4
6
7
100 k  
1 M  
10 M  
100 M  
V
O
− Output Voltage − V  
f − Frequency − Hz  
PP  
Figure 9  
Figure 10  
HARMONIC DISTORTION  
HARMONIC DISTORTION  
vs  
vs  
FREQUENCY  
FREQUENCY  
−30  
−40  
−50  
−60  
−70  
−80  
−30  
−40  
−50  
−60  
−70  
−80  
V
=
10 V  
V
=
5.4 V  
CC  
Gain = 4  
= 100 Ω  
CC  
Gain = 4  
= 100 Ω  
R
R
L
L
2nd Order  
2nd Order  
R = 390 Ω  
R = 390 Ω  
f
f
V
O
= 2 V  
V
O
= 2 V  
PP  
PP  
3rd Order  
3rd Order  
−90  
−90  
−100  
−100  
100 k  
1 M  
10 M  
100 M  
100 k  
1 M  
10 M  
100 M  
f − Frequency − Hz  
f − Frequency − Hz  
Figure 11  
Figure 12  
9
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
TYPICAL CHARACTERISTICS  
HARMONIC DISTORTION  
HARMONIC DISTORTION  
vs  
vs  
OUTPUT VOLTAGE  
OUTPUT VOLTAGE  
−70  
−75  
−80  
−85  
−90  
−70  
−75  
−80  
−85  
−90  
2nd Order  
2nd Order  
V
=
10 V  
Gain = 4  
= 25 Ω  
CC  
V
=
15 V  
Gain = 4  
= 25 Ω  
CC  
R
L
R = 390 Ω  
f = 250 KHz  
f
R
L
R = 390 Ω  
f = 250 KHz  
f
3rd Order  
3rd Order  
−95  
−95  
−100  
−100  
0
2
4
6
8
10  
12  
14  
0
2
4
6
8
10  
12  
14  
V
O
− Output Voltage − V  
PP  
V
O
− Output Voltage − V  
PP  
Figure 13  
Figure 14  
HARMONIC DISTORTION  
vs  
HARMONIC DISTORTION  
vs  
OUTPUT VOLTAGE  
FREQUENCY  
−70  
−75  
−80  
−85  
−90  
−30  
−40  
−50  
−60  
−70  
−80  
2nd Order  
2nd Order  
V
=
5.4 V  
CC  
Gain = 4  
= 25 Ω  
R
L
R = 390 Ω  
f = 250 KHz  
f
3rd Order  
3rd Order  
V
=
15 V  
Gain = 4  
= 25 Ω  
CC  
R
L
−95  
R = 390 Ω  
f
−90  
V
O
= 2 V  
PP  
−100  
−100  
0
1
2
3
4
5
6
7
100 k  
1 M  
10 M  
100 M  
f − Frequency − Hz  
V
O
− Output Voltage − V  
PP  
Figure 15  
Figure 16  
10  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
TYPICAL CHARACTERISTICS  
HARMONIC DISTORTION  
HARMONIC DISTORTION  
vs  
vs  
FREQUENCY  
FREQUENCY  
−30  
−40  
−50  
−60  
−70  
−80  
−30  
−40  
−50  
−60  
−70  
−80  
2nd Order  
2nd Order  
3rd Order  
3rd Order  
V
=
10 V  
Gain = 4  
= 25 Ω  
CC  
V
=
5.4 V  
Gain = 4  
R = 25 Ω  
L
CC  
R
L
R = 390 Ω  
V
f
R = 390 Ω  
V
f
−90  
−90  
= 2 V  
O
PP  
= 2 V  
PP  
O
−100  
−100  
100 k  
1 M  
10 M  
100 M  
100 k  
1 M  
10 M  
100 M  
f − Frequency − Hz  
f − Frequency − Hz  
Figure 17  
Figure 18  
VOLTAGE NOISE AND CURRENT NOISE  
QUIESCENT CURRENT  
vs  
vs  
FREQUENCY  
FREE-AIR TEMPERATURE  
100  
10  
V
T
=
5 V to 15 V  
CC  
A
= 25°C  
Per Amplifier  
9.5  
9
V
CC  
= 12 V  
8.5  
IN−  
8
10  
7.5  
V
CC  
= 6 V  
IN+  
7
6.5  
V
n
6
1
10  
5.5  
100  
1 k  
10 k  
100 k  
−40  
−20  
0
20  
40  
60  
80  
100  
f − Frequency − Hz  
T
A
− Free-Air Temperature − °C  
Figure 19  
Figure 20  
11  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
TYPICAL CHARACTERISTICS  
POSITIVE OUTPUT VOLTAGE HEADROOM  
NEGATIVE OUTPUT VOLTAGE HEADROOM  
vs  
vs  
FREE-AIR TEMPERATURE  
FREE-AIR TEMPERATURE  
1.35  
1.3  
−1.05  
−1.1  
(+V  
CC  
− V )  
O
(−V  
CC  
− V )  
O
V
= 6 V, R = 25 Ω  
L
CC  
V
CC  
= 6 V, R = 100 Ω  
L
1.25  
1.2  
−1.15  
−1.2  
V
CC  
= 12 V, R = 100 Ω  
L
V
CC  
= 12 V, R = 100 Ω  
L
1.15  
V
CC  
=
6 V, R = 100 Ω  
L
−1.25  
V
CC  
= 6 V, R = 25 Ω  
L
1.1  
−1.3  
1.05  
−1.35  
−40  
−20  
0
20  
40  
60  
80  
100  
−40  
−20  
0
20  
40  
60  
80  
100  
T
A
− Free-Air Temperature − °C  
T
A
− Free-Air Temperature − °C  
Figure 21  
Figure 22  
OUTPUT VOLTAGE HEADROOM  
CLOSED LOOP OUTPUT IMPEDANCE  
vs  
vs  
OUTPUT CURRENT  
FREQUENCY  
100  
10  
4
| V  
CC  
CC  
| − | V  
= 12 V and 6 V  
|
V
R
=
5 V to 15 V  
O
CC  
L
V
= 100 Ω  
3.5  
R = 750 Ω  
f
Gain = 8  
3
2.5  
2
Gain = 4  
1
Gain = 2  
0.1  
1.5  
1
0.01  
0
100  
I
200  
300  
400  
500  
100 K  
1 M  
10 M  
f − Frequency − Hz  
100 M  
1 G  
− Output Current − | mA |  
O
Figure 23  
Figure 24  
12  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
TYPICAL CHARACTERISTICS  
INPUT OFFSET VOLTAGE AND  
DIFFERENTIAL INPUT OFFSET VOLTAGE  
QUIESCENT CURRENT IN SHUTDOWN MODE  
vs  
vs  
FREE-AIR TEMPERATURE  
FREE-AIR TEMPERATURE  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.4  
0.35  
0.3  
12  
11  
10  
Both Amplifiers  
V
=
6 V to 12 V  
CC  
V
CC  
=
12 V  
6 V  
V
=
CC  
0.25  
9
V
OS  
0.2  
8
7
Differential V  
OS  
0.15  
−40  
−20  
0
20  
40  
60  
80  
100  
−40  
−20  
0
T
20  
40  
60  
80  
100  
T
A
− Free-Air Temperature − °C  
− Temperature − °C  
A
Figure 25  
Figure 26  
COMMON-MODE REJECTION RATIO  
INPUT BIAS CURRENT  
vs  
FREE-AIR TEMPERATURE  
vs  
FREQUENCY  
80  
70  
60  
50  
40  
30  
20  
5
Gain = 2  
R = 1 kΩ  
f
V
CC  
= 6 V to 12 V  
4.5  
4
V
R
= +12 V  
= 100 Ω  
CC  
L
I
IB−  
3.5  
3
V
R
= +6 V  
= 25 Ω  
CC  
L
2.5  
2
1.5  
1
I
IB+  
0.5  
0
10 k  
100 k  
1 M  
10 M  
100 M  
−40  
−20  
0
20  
40  
60  
80  
100  
f − Frequency − Hz  
T
A
− Temperature − °C  
Figure 27  
Figure 28  
13  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
TYPICAL CHARACTERISTICS  
SLEW RATE  
vs  
OUTPUT VOLTAGE STEP  
CROSSTALK  
vs  
FREQUENCY  
1800  
0
−10  
−20  
V
=
6 V to 12 V  
Gain = 4  
= 100 Ω  
R = 750 Ω  
f
CC  
V
CC  
=
15 V  
1600  
1400  
1200  
1000  
800  
Gain = 4  
R
L
R = 390 Ω  
f
R
= 25 Ω  
L
−30  
−40  
−50  
V
CC  
= 12 V  
R = 430 Ω  
f
L
R
= 100 Ω  
V
CC  
= 6 V  
600  
−60  
−70  
400  
200  
0
−80  
−90  
0
2
4
6
8
10  
12  
14  
16  
100 k  
1 M  
10 M  
100 M  
Output Voltage Step − V  
f − Frequency − Hz  
Figure 29  
Figure 30  
TRANSIMPEDANCE AND PHASE  
vs  
FREQUENCY  
SHUTDOWN RESPONSE  
7
6
140  
3
1
45  
V
R
=
5 V to 15 V  
CC  
L
= 1 kΩ  
V
(SHDN)  
120  
100  
80  
0
5
−1  
−3  
−5  
−7  
Transimpedance  
−45  
4
3
−90  
Phase  
2
60  
−135  
Gain = 8  
+12 V  
1
−9  
V
CC  
R = 750 Ω  
V
O
40  
20  
−180  
−225  
f
11  
0
R
= 100 Ω  
L
−13  
−1  
12  
16  
20  
0
4
8
1 K  
10 K  
100 K  
f − Frequency − Hz  
1 M  
10 M 100 M  
1 G  
t − Time − µs  
Figure 31  
Figure 32  
14  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
TYPICAL CHARACTERISTICS  
OVERDRIVE RECOVERY  
OVERDRIVE RECOVERY  
16  
12  
8
2
16  
12  
8
2
V
I
Gain = 8  
12 V  
R = 750 Ω  
Gain = −8  
12 V  
R = 750 Ω  
V
CC  
=
1.5  
V
CC  
=
1.5  
f
L
R
= 100 Ω  
f
L
1
R
= 100 Ω  
1
V
I
V
O
0.5  
0
4
0
4
0
0.5  
0
−4  
−8  
−0.5  
−1  
−4  
−8  
−0.5  
−1  
V
O
−1.5  
−2  
−12  
−16  
−1.5  
−2  
−12  
−16  
0
40  
80  
120  
160  
200  
t − Time − ns  
0
40  
80  
120  
160  
200  
t − Time − ns  
Figure 33  
Figure 34  
SMALL AND LARGE SIGNAL PULSE RESPONSE  
SMALL AND LARGE SIGNAL PULSE RESPONSE  
0.6  
6
4
2
6
4
2
0.6  
0.4  
0.2  
Large Signal  
Gain = −8  
12 V  
R = 750 Ω  
Gain = 8  
12 V  
R = 750 Ω  
V
=
V
=
CC  
f
CC  
f
0.4  
0.2  
R
= 100 Ω  
R
= 100 Ω  
Small Signal  
L
L
0
0
0
0
−2  
−2  
−0.2  
−0.4  
−0.6  
−0.2  
−0.4  
−0.6  
Small Signal  
−4  
−6  
−4  
−6  
Large Signal  
120  
0
40  
80  
160  
200  
0
40  
80  
120  
160  
200  
t − Time − ns  
t − Time − ns  
Figure 35  
Figure 36  
15  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
APPLICATION INFORMATION  
The THS6042/3 contain two independent operational amplifiers. These amplifiers are current feedback  
topology amplifiers made for high-speed operation. They have been specifically designed to deliver the full  
power requirements of ADSL and therefore can deliver output currents of at least 230 mA at full output voltage.  
The THS6042/3 are fabricated using the Texas Instruments 30-V complementary bipolar process, HVBiCOM.  
This process provides excellent isolation and high slew rates that result in the device’s excellent crosstalk and  
extremely low distortion.  
ADSL  
The THS6042/3 were primarily designed as line drivers for ADSL (asymmetrical digital subscriber line). The  
driver output stage has been sized to provide full ADSL power levels of 13 dBm onto the telephone lines.  
Although actual driver output peak voltages and currents vary with each particular ADSL application, the  
THS6042/3 are specified for a minimum full output current of 230 mA at 6 V and 300 mA at the full output  
voltage of 12 V. This performance meets the demanding needs of ADSL at the client side end of the telephone  
line. A typical ADSL schematic is shown in Figure 37.  
The ADSL transmit band consists of 255 separate carrier frequencies each with its own modulation and  
amplitude level. With such an implementation, it is imperative that signals put onto the telephone line have as  
low a distortion as possible. This is because any distortion either interferes directly with other ADSL carrier  
frequencies or creates intermodulation products that interfere with other ADSL carrier frequencies.  
The THS6042/3 have been specifically designed for ultra low distortion by careful circuit implementation and  
by taking advantage of the superb characteristics of the complementary bipolar process. Driver single-ended  
distortion measurements are shown in Figures 7 − 15. In the differential driver configuration, the second order  
harmonics tend to cancel out. Thus, the dominant total harmonic distortion (THD) is primarily due to the third  
order harmonics. Additionally, distortion should be reduced as the feedback resistance drops. This is because  
the bandwidth of the amplifier increases, which allows the amplifier to react faster to any nonlinearities in the  
closed-loop system. Another significant point is the fact that distortion decreases as the impedance load  
increases. This is because the output resistance of the amplifier becomes less significant as compared to the  
output load resistance.  
Even though the THS6042/3 are designed to drive ADSL signals that have a maximum bandwidth of 1.1 MHz,  
reactive loading from the transformer can cause some serious issues. Most transformers have a resonance  
peak typically occurring from 20 MHz up to 150 MHz depending on the manufacturer and construction  
technique. This resonance peak can cause some serious issues with the line driver amplifier such as small  
high-frequency oscillations, increased current consumption, and/or ringing. Although the series termination  
resistor helps isolate the transformer’s resonance from the line-driver amplifier, additional means may be  
necessary to eliminate the effects of a reactive load. The simplest way is to add a snubber network, also known  
as a zoebel network, in parallel with the transformer as shown by R  
and C  
in Figure 36. At high  
(SNUB)  
(SNUB)  
frequencies, where the transformer’s impedance becomes very high at its resonance frequency (ex: 1 k@  
100 MHz), the snubber provides a resistive load to the circuit. The value for R should initially be set to  
(SNUB)  
the impedance presented by the transformer within its pass-band. An example of this would be to use a 100-Ω  
resistor for a 1:1 transformer or a 25-resistor for a 1:2 transformer. The value for C should be chosen  
(SNUB)  
such that the –3 dB frequency is about 5 times less than the resonance frequency. For example,if the resonance  
frequency is at 100 MHz, the impedance of C should be equal to R at 20 MHz. This leads to a value  
(SNUB)  
(SNUB)  
of C  
= 1 / (2 π f R  
), or approximately 82 pF. This should only be used as a starting point. The final  
(SNUB)  
(SNUB)  
values will be dictated by actual circuit testing.  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
APPLICATION INFORMATION  
ADSL (continued)  
One problem in the ADSL CPE area is noise. It is imperative that signals received off the telephone line have  
as high a signal-to-noise ratio (SNR) as possible. This is because of the numerous sources of interference on  
the line. The best way to accomplish this high SNR is to have a low-noise receiver such as the THS6062 or  
OPA2822 on the front-end. Even if the receiver has very low noise characteristics, noise could be dominated  
by the line driver amplifier. The THS6042/3 were primarily designed to circumvent this issue.  
The ADSL standard, ANSI T1.413, stipulates a noise power spectral density of –140 dBm/Hz, which is  
equivalent to 31.6 nV/Hz for a 100-system. Although many amplifiers can reach this level of performance,  
actual ADSL system testing has indicated that the noise power spectral density may be required to have –150  
dBm/Hz, or 10 nV/Hz. With a transformer ratio of 1:2, this number reduces to less than 5 nV/Hz. The  
THS6042/3, with an equivalent input noise of 2.2 nV/Hz, is an excellent choice for this application. Coupled  
with a low 2.1 pA/Hz noninverting current noise, a very low 11 pA/Hz inverting current noise, and low value  
resistors, the THS6042/3 ensures that the received signal SNR is as high as possible.  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
APPLICATION INFORMATION  
ADSL (continued)  
+12 V  
+
0.1 µF  
THS6042  
Driver 1  
10 µF  
50 Ω  
+
_
V +  
I
R
C
(SNUB)  
1:1  
750 Ω  
Telephone Line  
100 Ω  
(SNUB)  
1 µF  
210 Ω  
499 Ω  
+12 V  
1 kΩ  
THS6042  
Driver 2  
0.1 µF  
0.68 µF  
499 Ω  
50 Ω  
+
_
V −  
I
+
V
O+  
THS6062  
Receiver 1  
750 Ω  
0.1 µF  
10 µF  
499 Ω  
+
−12 V  
1 kΩ  
499 Ω  
+
V
O−  
THS6062  
Receiver 2  
−12 V  
0.1 µF  
Figure 37. THS6042 ADSL Application With 1:1 Transformer Ratio  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
APPLICATION INFORMATION  
noise calculations and noise figure  
Noise can cause errors on very small signals. This is especially true for the amplifying small signals. The noise  
model for current feedback amplifiers (CFB) is the same as voltage feedback amplifiers (VFB). The only  
difference between the two is that the CFB amplifiers generally specify different current noise parameters for  
each input, while VFB amplifiers usually only specify one noise current parameter. The noise model is shown  
in Figure 38. This model includes all of the noise sources as follows:  
e = Amplifier internal voltage noise (nV/Hz)  
n
IN+ = Noninverting current noise (pA/Hz)  
IN− = Inverting current noise (pA/Hz)  
e = Thermal voltage noise associated with each resistor (e = 4 kTR )  
Rx  
Rx  
x
e
Rs  
e
n
R
Noiseless  
S
+
_
e
ni  
e
no  
IN+  
IN−  
e
Rf  
R
F
e
Rg  
R
G
Figure 38. Noise Model  
The total equivalent input noise density (e ) is calculated by using the following equation:  
ni  
2
) ǒIN )   RSǓ2  
ǒ
Ǔ
) 4 kTR ) 4 kTǒR GǓ  
2
Ǹ
ǒ Ǔ  
) ǒIN–   R G Ǔ  
e
+
e
ø R  
ø R  
n
s
ni  
F
F
Where:  
−23  
k = Boltzmann’s constant = 1.380658 × 10  
T = Temperature in degrees Kelvin (273 +°C)  
R || R = Parallel resistance of R and R  
F
G
F
G
To get the equivalent output noise of the amplifier, just multiply the equivalent input noise density (e ) by the  
ni  
overall amplifier gain (A ).  
V
R
F
+ e ǒ1 ) Ǔ(Noninverting Case)  
e
+ e  
A
no  
ni  
R
G
ni  
V
As the previous equations show, to keep noise at a minimum, small value resistors should be used. As the  
closed-loop gain is increased (by reducing R ), the input noise is reduced considerably because of the parallel  
G
resistance term. This leads to the general conclusion that the most dominant noise sources are the source  
resistor (R ) and the internal amplifier noise voltage (e ). Because noise is summed in a root-mean-squares  
S
n
method, noise sources smaller than 25% of the largest noise source can be effectively ignored. This can greatly  
simplify the formula and make noise calculations much easier to calculate.  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
APPLICATION INFORMATION  
noise calculations and noise figure (continued)  
This brings up another noise measurement usually preferred in RF applications, the noise figure (NF). Noise  
figure is a measure of noise degradation caused by the amplifier. The value of the source resistance must be  
defined and is typically 50 in RF applications.  
2
ȱ e ȳ  
ni  
NF + 10log  
ȧ ȧ  
2
ǒe  
Ǔ
Ȳ ȴ  
Rs  
Because the dominant noise components are generally the source resistance and the internal amplifier noise  
voltage, we can approximate noise figure as:  
ȱ
ȳ
2ȣ  
2
ȡ
) ǒIN )   R  
Ǔ
S
ǒe Ǔ  
ȧ
ȧ
n
ȧ
ȧ
ȧ
ȧ
Ȣ
Ȥ
ȧ
ȧ
ȧ
ȧ
NF + 10logȧ1 )  
4 kTR  
S
ȧ
Ȳ
ȴ
Figure 39 shows the noise figure graph for the THS6042/3.  
16  
f = 10 kHz  
= 25°C  
T
A
14  
12  
10  
8
6
4
2
0
10  
100  
1 k  
10 k  
R
− Source Resistance − Ω  
S
Figure 39. Noise Figure vs Source Resistance  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
APPLICATION INFORMATION  
device protection features  
The THS6042/3 have two built-in features that protect the devices against improper operation. The first  
protection mechanism is output current limiting. Should the output become shorted to ground, the output current  
is automatically limited to the value given in the data sheet. While this protects the output against excessive  
current, the device internal power dissipation increases due to the high current and large voltage drop across  
the output transistors. Continuous output shorts are not recommended and could damage the device.  
The second built-in protection feature is thermal shutdown. Should the internal junction temperature rise above  
approximately 180_C, the device automatically shuts down. Such a condition could exist with improper heat  
sinking or if the output is shorted to ground. When the abnormal condition is fixed, the internal thermal shutdown  
circuit automatically turns the device back on.  
thermal information − PowerPAD  
The THS6042/3 are available packaged in thermally-enhanced PowerPAD packages. These packages are  
constructed using a downset leadframe upon which the die is mounted [see Figure 40(a) and Figure 40(b)]. This  
arrangement results in the lead frame being exposed as a thermal pad on the underside of the package [see  
Figure 40(c)]. Because this thermal pad has direct thermal contact with the die, excellent thermal performance  
can be achieved by providing a good thermal path away from the thermal pad.  
The PowerPAD package allows for both assembly and thermal management in one manufacturing operation.  
During the surface-mount solder operation (when the leads are being soldered), the thermal pad can also be  
soldered to a copper area underneath the package. Through the use of thermal paths within this copper area,  
heat can be conducted away from the package into either a ground plane or other heat dissipating device. This  
is discussed in more detail in the PCB design considerations section of this document.  
The PowerPAD package represents a breakthrough in combining the small area and ease of assembly of  
surface mount with the, heretofore, awkward mechanical methods of heatsinking.  
DIE  
Thermal  
Pad  
Side View (a)  
DIE  
End View (b)  
Bottom View (c)  
NOTE A: The thermal pad is electrically isolated from all terminals in the package.  
Figure 40. Views of Thermally Enhanced PWP Package  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
APPLICATION INFORMATION  
PCB design considerations  
Proper PCB design techniques in two areas are important to assure proper operation of the THS6042/3. These  
areas are high-speed layout techniques and thermal-management techniques. Because the devices are  
high-speed parts, the following guidelines are recommended.  
D
Ground plane − It is essential that a ground plane be used on the board to provide all components with a  
low inductive ground connection. Although a ground connection directly to a terminal of the THS6042/3 is  
not necessarily required, it is highly recommended that the thermal pad of the package be tied to ground.  
This serves two functions. It provides a low inductive ground to the device substrate to minimize internal  
crosstalk and it provides the path for heat removal.  
D
Input stray capacitance − To minimize potential problems with amplifier oscillation, the capacitance at the  
inverting input of the amplifiers must be kept to a minimum. To do this, PCB trace runs to the inverting input  
must be as short as possible, the ground plane must be removed under any etch runs connected to the  
inverting input, and external components should be placed as close as possible to the inverting input. This  
is especially true in the noninverting configuration. An example of this can be seen in Figure 41, which shows  
what happens when a 2.2-pF capacitor is added to the inverting input terminal in the noninverting  
configuration. The bandwidth increases dramatically at the expense of peaking. This is because some of  
the error current is flowing through the stray capacitor instead of the inverting node of the amplifier. While  
the device is in the inverting mode, stray capacitance at the inverting input has a minimal effect. This is  
because the inverting node is at a virtual ground and the voltage does not fluctuate nearly as much as in  
the noninverting configuration. This can be seen in Figure 42, where a 22-pF capacitor adds only 0.9 dB  
of peaking. In general, as the gain of the system increases, the output peaking due to this capacitor  
decreases. While this can initally appear to be a faster and better system, overshoot and ringing are more  
likely to occur under fast transient conditions. So, proper analysis of adding a capacitor to the inverting input  
node should always be performed for stable operation.  
OUTPUT AMPLITUDE  
vs  
OUTPUT AMPLITUDE  
vs  
FREQUENCY  
FREQUENCY  
6
4
2
1
V
=
12 V  
C = 22 pF  
i
CC  
Gain = 1  
C = 2.2 pF  
i
R
= 50 Ω  
= 0.1 V  
L
V
O
0
2
0
V
=
12 V  
CC  
Gain = −1  
R
−1  
= 50 Ω  
= 0.1 V  
L
V
O
−2  
−3  
−4  
−5  
−6  
−7  
C = 0 pF  
i
(Stray C Only)  
−2  
C = 0 pF  
(Stray C Only)  
i
−4  
−6  
−8  
C in  
750  
750 Ω  
R
g
+
V
O
V
+
I
V
I
V
O
50 Ω  
C in  
50 Ω  
50 Ω  
R
= 50 Ω  
L
−10  
100 k  
1 M  
10 M  
100 M  
1 G  
100 k  
1 M  
10 M  
100 M  
1 G  
f − Frequency − Hz  
f − Frequency − Hz  
Figure 41  
Figure 42  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
APPLICATION INFORMATION  
PCB design considerations (continued)  
D
D
Proper power supply decoupling − Use a minimum of a 6.8-µF tantalum capacitor in parallel with a 0.1-µF  
ceramic capacitor on each supply terminal. It may be possible to share the tantalum among several  
amplifiers depending on the application, but a 0.1-µF ceramic capacitor should always be used on the  
supply terminal of every amplifier. In addition, the 0.1-µF capacitor should be placed as close as possible  
to the supply terminal. As this distance increases, the inductance in the connecting etch makes the capacitor  
less effective. The designer should strive for distances of less than 0.1 inches between the device power  
terminal and the ceramic capacitors.  
Differential power supply decoupling − The THS6042/3 were designed for driving low-impedance  
differential signals. The 50-load which each amplifier drives causes large amounts of currents to flow from  
amplifier to amplifier. Power supply decoupling for differential current signals must be accounted for to  
ensure low distortion of the THS6042/3. By simply connecting a 0.1-µF to 1-µF ceramic capacitor from the  
+V  
pin to the −V  
pin, differential current loops will be minimized (see Figure 37). This will help keep  
CC  
CC  
the THS6042/3 operating at peak performance.  
Because of its power dissipation, proper thermal management of the THS6042/3 is required. Even though the  
THS6042 and THS6043 PowerPADs are different, the general methodology is the same. Although there are  
many ways to properly heatsink these devices, the following steps illustrate one recommended approach for  
a multilayer PCB with an internal ground plane. Refer to Figure 43 for the following steps.  
Thermal pad area (0.15 x 0.17) with 6 vias  
(Via diameter = 13 mils)  
Figure 43. THS6043 PowerPAD PCB Etch and Via Pattern − Minimum Requirements  
1. Place 6 holes in the area of the thermal pad. These holes should be 13 mils in diameter. They are kept small  
so that solder wicking through the holes is not a problem during reflow.  
2. Additional vias may be placed anywhere along the thermal plane outside of the thermal pad area. This will  
help dissipate the heat generated from the THS6042/3. These additional vias may be larger than the 13 mil  
diameter vias directly under the thermal pad. They can be larger because they are not in the thermal-pad  
area to be soldered, therefore, wicking is generally not a problem.  
3. Connect all holes to the internal ground plane.  
4. When connecting these holes to the ground plane, do not use the typical web or spoke via connection  
methodology. Web connections have a high thermal resistance connection that is useful for slowing the heat  
transfer during soldering operations. This makes the soldering of vias that have plane connections easier.  
However, in this application, low thermal resistance is desired for the most efficient heat transfer. Therefore,  
the holes under the THS6042/3 package should make their connection to the internal ground plane with  
a complete connection around the entire circumference of the plated through hole.  
5. The top-side solder mask should leave exposed the terminals of the package and the thermal pad area with  
its 6 holes. The bottom-side solder mask should cover the 6 holes of the thermal pad area. This eliminates  
the solder from being pulled away from the thermal pad area during the reflow process.  
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APPLICATION INFORMATION  
PCB design considerations (continued)  
6. Apply solder paste to the exposed thermal pad area and all of the operational amplifier terminals.  
7. With these preparatory steps in place, the THS6042/3 is simply placed in position and run through the solder  
reflow operation as any standard surface-mount component. This results in a part that is properly installed.  
The actual thermal performance achieved with the THS6042/3 in their PowerPAD packages depends on the  
application. In the previous example, if the size of the internal ground plane is approximately 3 inches × 3 inches,  
then the expected thermal coefficient, θ , is about 95°C/W for the SOIC−8 (D) package, 45.8°C/W for the DDA  
JA  
package, 66.6°C/W for the SOIC−14 (D) package, and 37.5°C/W for the PWP package. Although the maximum  
recommended junction temperature (T ) is listed as 150°C, performance at this elevated temperature will suffer.  
J
To ensure optimal performance, the junction temperature should be kept below 125°C. Above this temperature,  
distortion will tend to increase. Figure 44 shows the recommended power dissipation with a junction  
temperature of 125°C. If no solder is used to connect the PowerPAD to the PCB, the θ will increase  
JA  
dramatically with a vast reduction in power dissipation capability. For a given θ and a maximum junction  
JA  
temperature, the power dissipation is calculated by the following formula:  
T
–T  
MAX  
A
P
+
ǒ Ǔ  
D
q
JA  
Where:  
P
= Power dissipation of THS6042/3 (watts)  
D
T
= Maximum junction temperature allowed in the design (125°C recommended)  
= Free-ambient air temperature (°C)  
MAX  
T
A
θ
= θ + θ  
JA  
JC CA  
θ
θ
= Thermal coefficient from junction to case (D−8 =38.3°C/W, DDA = 9.2°C/W,  
D−14 = 26.9°C/W, PWP = 1.4°C/W)  
= Thermal coefficient from case to ambient  
JC  
CA  
5
PWP  
T
J
= 125 °C  
θ
JA  
= 37.5 °C/W  
DDA  
4
3
2
1
θ
JA  
= 45.8 °C/W  
D-14  
= 66.6 °C/W  
θ
JA  
D-8  
θ
JA  
= 95 °C/W  
0
−40  
−20  
0
20  
40  
60  
80  
100  
T − Free-Air Temperature − °C  
a
NOTE: Results are with no air flow and PCB size = 3”× 3”  
2 oz. trace and copper pad with solder unless otherwise noted.  
Figure 44. Maximum Power Dissipation vs Free-Air Temperature  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
APPLICATION INFORMATION  
PCB design considerations (continued)  
The next consideration is the package constraints. The two sources of heat within an amplifier are quiescent  
power and output power. The designer should never forget about the quiescent heat generated within the  
device, especially multiamplifier devices. Because these devices have linear output stages (Class-AB), most  
of the heat dissipation is at low output voltages with high output currents. Figure 45 and Figure 46 show this  
effect, along with the quiescent heat, with an ambient air temperature of 50°C. Obviously, as the ambient  
temperature increases, the limit lines shown will drop accordingly. The area under each respective limit line is  
considered the safe operating area. Any condition above this line will exceed the amplifier’s limits and failure  
may result. When using V  
= 6 V, there is generally not a heat problem, even with SOIC packages.  
CC  
However, when using V  
= 12 V, the SOIC package is severely limited in the amount of heat it can dissipate.  
CC  
The other key factor when looking at these graphs is how the devices are mounted on the PCB. The PowerPAD  
devices are extremely useful for heat dissipation. But, the device should always be soldered to a copper plane  
to fully use the heat dissipation properties of the PowerPAD. The standard SOIC package, on the other hand,  
is highly dependent on how it is mounted on the PCB. As more trace and copper area is placed around the  
device, θ decreases and the heat dissipation capability increases. The currents and voltages shown in these  
JA  
graphs are for the total package.  
MAXIMUM RMS OUTPUT CURRENT  
MAXIMUM RMS OUTPUT CURRENT  
vs  
vs  
RMS OUTPUT VOLTAGE (DUE TO THERMAL LIMITS)  
RMS OUTPUT VOLTAGE (DUE TO THERMAL LIMITS)  
1000  
1000  
Both Channels  
V
= 6 V  
V
= 12 V  
Both Channels  
CC  
CC  
T
T
= 150°C  
T
T
= 150°C  
J
J
= 50°C  
Maximum Output  
Current Limit Line  
Maximum Output  
Current Limit Line  
= 50°C  
A
A
PWP  
= 37.5°C/W  
θ
JA  
DDA  
= 45.8°C/W  
θ
PWP  
JA  
θ
= 37.5°C/W  
JA  
DDA  
= 45.8°C/W  
100  
100  
θ
JA  
SO-14 Package  
= 67°C/W  
θ
SO-14 Package  
= 67°C/W  
JA  
High-K Test PCB  
θ
JA  
High-K Test PCB  
SO-8 Package  
= 95°C/W  
θ
JA  
High-K Test PCB  
Safe  
Operating  
Area  
SO-8 Package  
= 95°C/W  
θ
JA  
High-K Test PCB  
10  
10  
0
1
2
3
4
5
6
0
2
4
6
8
10  
12  
V
O
− RMS Output Voltage − V  
V
O
− RMS Output Voltage − V  
Figure 45  
Figure 46  
25  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
APPLICATION INFORMATION  
recommended feedback and gain resistor values  
As with all current feedback amplifiers, the bandwidth of the THS6042/3 is an inversely proportional function  
of the value of the feedback resistor. This can be seen from Figures 1 to 6. The recommended resistors for the  
optimum frequency response are shown in Table 1. These should be used as a starting point and once optimum  
values are found, 1% tolerance resistors should be used to maintain frequency response characteristics.  
Because there is a finite amount of output resistance of the operational amplifier, load resistance can play a  
major part in frequency response. This is especially true with these drivers, which tend to drive low-impedance  
loads. This can be seen in Figures 1−6. As the load resistance increases, the output resistance of the amplifier  
becomes less dominant at high frequencies. To compensate for this, the feedback resistor may need to be  
changed. For most applications, a feedback resistor value of 750 is recommended, which is a good  
compromise between bandwidth and phase margin that yields a very stable amplifier.  
Table 1. Recommended Feedback (R ) Values for Optimum Frequency Response  
f
R
= 25 Ω  
R = 100 Ω  
L
L
GAIN  
V
CC  
=
6 V  
V
CC  
=
12 V  
V
CC  
=
6 V  
V
CC  
= 12 V  
1
2, −1  
4
680 Ω  
470 Ω  
270 Ω  
200 Ω  
560 Ω  
430 Ω  
240 Ω  
200 Ω  
620 Ω  
430 Ω  
270 Ω  
200 Ω  
510 Ω  
390 Ω  
240 Ω  
200 Ω  
8
Consistent with current feedback amplifiers, increasing the gain is best accomplished by changing the gain  
resistor, not the feedback resistor. This is because the bandwidth of the amplifier is dominated by the feedback  
resistor value and internal dominant-pole capacitor. The ability to control the amplifier gain independently of the  
bandwidth constitutes a major advantage of current feedback amplifiers over conventional voltage feedback  
amplifiers. Therefore, once a frequency response is found suitable to a particular application, adjust the value  
of the gain resistor to increase or decrease the overall amplifier gain.  
Finally, it is important to realize the effects of the feedback resistance on distortion. Increasing the resistance  
decreases the loop gain and may increase the distortion. Decreasing the feedback resistance too low may  
increase the bandwidth, but an increase in the load on the output may cause distortion to increase instead of  
decreasing. It is also important to know that decreasing load impedance increases total harmonic distortion  
(THD). Typically, the third order harmonic distortion increases more than the second order harmonic distortion.  
This is illustrated in Figure 10 to 12 and Figures 16 to 18.  
26  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
APPLICATION INFORMATION  
shutdown control  
The THS6043 is essentially the same amplifier as the THS6042. The only difference is the added flexibility of  
a shutdown circuit. When the shutdown pin signal is low, the THS6043 is active. But, when a shutdown pin is  
high (2 V), the THS6043 is turned off. The shutdown logic is not latched and should always have a signal  
applied to it. To help ensure a fixed logic state, an internal 50 kresistor to GND is utilized. An external resistor,  
such as a 3.3 k, to GND may be added to help improve noise immunity within harsh environments. If no  
external resistor is utilized and SHDN pin is left unconnected, the THS6043 defaults to a power-on state. A  
simplified circuit can be seen in Figure 47.  
+V  
CC  
To Internal  
Bias Circuitry  
Control  
SHDN  
50 kΩ  
GND  
GND  
−V  
CC  
Figure 47. Simplified THS6043 Shutdown Control Circuit  
One aspect of the shutdown feature, which is often over-looked, is that the amplifier does not have a large output  
impedance while in shutdown mode. This is due to the R and R resistors. This effect is true for any amplifier  
F
G
connected as an amplifier with gains >1. The internal circuitry may be powered down and in a high-impedance  
state, but the resistors are always there. This allows the signal to flow through these resistors and into the ground  
connection. Figure 48 shows the results of the output impedance with no feedback resistor and a typically  
configured amplifier.  
1000  
V
CC  
= 5 V to 15 V  
Open Loop  
100  
10  
1
0.1  
Gain = −8  
R
= 750 Ω  
F
0.01  
10 K  
100 K  
1 M  
10 M  
100 M  
1 G  
f − Frequency − Hz  
Figure 48. Output Impedance In Shutdown Mode  
27  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
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SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
APPLICATION INFORMATION  
driving a capacitive load  
Driving capacitive loads with high performance amplifiers is not a problem as long as certain precautions are  
taken. The first is to realize that the THS6042/3 has been internally compensated to maximize its bandwidth  
and slew rate performance. When the amplifier is compensated in this manner, capacitive loading directly on  
the output decreases the device’s phase margin leading to high frequency ringing or oscillations. Therefore, for  
capacitive loads of greater than 5 pF, it is recommended that a resistor be placed in series with the output of  
the amplifier, as shown in Figure 49. Keep in mind that stray capacitance on the output is also considered  
capacitive loading, whether or not it is there on purpose. A minimum value of 5 should work well for most  
applications. In ADSL systems, setting the series resistor value to 12.4 both isolates any capacitance loading  
and provides the proper line impedance matching at the source end.  
750 Ω  
100 Ω  
_
12.4 Ω  
Output  
+
C
+ C  
L
Input  
(Stray)  
Figure 49. Driving a Capacitive Load  
general configurations  
A common error for the first-time CFB user is to create a unity gain buffer amplifier by shorting the output directly  
to the inverting input. A CFB amplifier in this configuration oscillates and is not recommended. The THS6042/3,  
like all CFB amplifiers, must have a feedback resistor for stable operation. Additionally, placing capacitors  
directly from the output to the inverting input is not recommended. This is because, at high frequencies, a  
capacitor has a very low impedance. This results in an unstable amplifier and should not be considered when  
using a current-feedback amplifier. Because of this, integrators and simple low-pass filters, which are easily  
implemented on a VFB amplifier, have to be designed slightly differently. If filtering is required, simply place an  
RC-filter at the noninverting terminal of the operational-amplifier (see Figure 50).  
R
R
F
G
V
R
R
O
F
1
ǒ
Ǔ
+
ǒ
1 )  
Ǔ
V
1 ) sR1C1  
I
G
V
O
+
V
I
1
f
+
R1  
–3dB  
2pR1C1  
C1  
Figure 50. Single-Pole Low-Pass Filter  
28  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
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ꢈ ꢉ ꢄ ꢊꢋꢇ ꢌ ꢆ ꢍ ꢋꢎꢂ ꢏ ꢐꢑꢒ ꢏ ꢓꢔꢒ ꢎ ꢕꢓ ꢍ ꢒꢕ ꢂ  
SLOS264G − MARCH 2000 − REVISED DECEMBER 2001  
APPLICATION INFORMATION  
general configurations (continued)  
If a multiple pole filter is required, the use of a Sallen-Key filter can work very well with CFB amplifiers. This is  
because the filtering elements are not in the negative feedback loop and stability is not compromised. Because  
of their high slew-rates and high bandwidths, CFB amplifiers can create very accurate signals and help minimize  
distortion. An example is shown in Figure 51.  
C1  
R1 = R2 = R  
C1 = C2 = C  
Q = Peaking Factor  
(Butterworth Q = 0.707)  
+
_
V
I
1
R1  
R2  
f
+
–3dB  
2pRC  
C2  
R
F
1
R
=
G
R
F
2 −  
)
R
(
Q
G
Figure 51. 2-Pole Low-Pass Sallen-Key Filter  
29  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Jun-2014  
PACKAGING INFORMATION  
Orderable Device  
THS6042CDDA  
THS6042CDDAG3  
THS6042ID  
Status Package Type Package Pins Package  
Eco Plan  
Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
0 to 70  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(6)  
(3)  
(4/5)  
ACTIVE SO PowerPAD  
DDA  
8
8
75  
Green (RoHS  
& no Sb/Br)  
CU SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
6042C  
ACTIVE SO PowerPAD  
DDA  
D
75  
75  
Green (RoHS  
& no Sb/Br)  
CU SN  
0 to 70  
6042C  
ACTIVE  
SOIC  
8
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
CU SN  
-40 to 85  
-40 to 85  
-40 to 85  
0 to 70  
6042I  
THS6042IDDA  
THS6042IDG4  
THS6043CPWP  
THS6043ID  
ACTIVE SO PowerPAD  
DDA  
D
8
75  
Green (RoHS  
& no Sb/Br)  
6042I  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
SOIC  
8
75  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
6042I  
HTSSOP  
SOIC  
PWP  
D
14  
14  
14  
14  
14  
14  
90  
Green (RoHS  
& no Sb/Br)  
HS6043C  
THS6043I  
HS6043I  
HS6043I  
HS6043I  
HS6043I  
50  
Green (RoHS  
& no Sb/Br)  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
THS6043IPWP  
THS6043IPWPG4  
THS6043IPWPR  
THS6043IPWPRG4  
HTSSOP  
HTSSOP  
HTSSOP  
HTSSOP  
PWP  
PWP  
PWP  
PWP  
90  
Green (RoHS  
& no Sb/Br)  
90  
Green (RoHS  
& no Sb/Br)  
2000  
2000  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Jun-2014  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish  
value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
12-Aug-2013  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
THS6043IPWPR  
HTSSOP PWP  
14  
2000  
330.0  
12.4  
6.9  
5.6  
1.6  
8.0  
12.0  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
12-Aug-2013  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
HTSSOP PWP 14  
SPQ  
Length (mm) Width (mm) Height (mm)  
367.0 367.0 35.0  
THS6043IPWPR  
2000  
Pack Materials-Page 2  
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