THS9001_14 [TI]
50 MHz to 750 MHz CASCADEABLE AMPLIFIER;
| 型号： | THS9001_14 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 50 MHz to 750 MHz CASCADEABLE AMPLIFIER 放大器 |
| 文件： | 总17页 (文件大小：444K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
THS9001
www.ti.com
SLOS426A–NOVEMBER 2003–REVISED FEBRUARY 2004
50 MHz to 350 MHz CASCADEABLE AMPLIFIER
FEATURES
APPLICATIONS
•
IF Amplifier
•
High Dynamic Range
– OIP3 = 36 dBm
– NF < 4.5 dB
– TDMA: GSM, IS-136, EDGE/UWE-136
– CDMA: IS-95, UMTS, CDMA2000
– Wireless Local Loop
•
•
Single Supply Voltage
High Speed
– Wireless LAN: IEEE802.11
– VS = 3 V to 5 V
– IS = Adjustable
Input / Output Impedance
– 50 Ω
•
DESCRIPTION
The THS9001 is a medium power, cascadeable, gain block optimized for high IF frequencies. The amplifier
incorporates internal impedance matching to 50 Ω and achieves greater than 15-dB input and output return loss
from 50 MHz to 350 MHz with VS = 5 V, R(BIAS) = 237 Ω, L(COL) = 470 nH. Design requires only 2 dc-blocking
capacitors, 1 power-supply bypass capacitor, 1 RF choke, and 1 bias resistor.
Functional Block Diagram
V
S
THS9001
R
(BIAS)
IF
(IN)
1
6
C
IN
IF
(OUT)
5
4
2
3
C
OUT
L
(COL)
C
(BYP)
V
S
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2003–2004, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
THS9001
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SLOS426A–NOVEMBER 2003–REVISED FEBRUARY 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
PACKAGED DEVICES
THS9001DBVT
PACKAGE TYPE
TRANSPORT MEDIA, QUANTITY
Tape and Reel, 250
SOT-23-6
THS9001DBVR
Tape and Reel, 3000
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature (unless otherwise noted)(1)
UNIT
5.5 V
Supply voltage, GND to VS
Input voltage
GND to VS
Continuous power dissipation
See Dissipation Ratings Table
Maximum junction temperature, TJ
150°C
125°C
(2)
Maximum junction temperature, continuous operation, long term reliability, TJ
Storage temperature, Tstg
-65°C to 150°C
300°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
HBM
2000
ESD Ratings
CDM
MM
1500
100
(1) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
DISSIPATION RATING TABLE
POWER RATING(1)
ΘJC
(°C/W)
ΘJA
(°C/W)
PACKAGE
TA≤ 25°C
TA = 85°C
DBV(2)
70.1
216
463 mW
185 mW
(1) Power rating is determined with a junction temperature of 125°C. Thermal management of the final PCB should strive to keep the
junction temperature at or below 125°C for best performance.
(2) This data was taken using the JEDEC standard High-K test PCB.
RECOMMENDED OPERATING CONDITIONS
MIN NOM
MAX UNIT
Supply voltage
2.7
-40
100
5
V
Operating free-air temperature, TA
Supply current
85
°C
mA
2
THS9001
www.ti.com
SLOS426A–NOVEMBER 2003–REVISED FEBRUARY 2004
ELECTRICAL CHARACTERISTICS
Typical Performance (VS = 5 V, R(BIAS) = 237 Ω, L(COL) = 470 nH) (unless otherwise noted)
PARAMETER
TEST CONDITIONS
f = 50 MHz
MIN
TYP
15.8
15.0
35
MAX
UNITS
Gain
dB
f = 350 MHz
f = 50 MHz
OIP3
dBm
dBm
dB
f = 350 MHz
f = 50 MHz
37
20.6
20.6
15.4
16.6
17
1-dB compression
Input return loss
Output return loss
Reverse isolation
Noise figure
f = 350 MHz
f = 50 MHz
f = 350 MHz
f = 50 MHz
dB
f = 350 MHz
f = 50 MHz
15
20.7
20.7
3.7
dB
f = 350 MHz
f = 50 MHz
dB
f = 350 MHz
4
PIN ASSIGNMENT
6
1
IF
BIAS
IF
(IN)
5
4
2
3
GND
(OUT)
V
S
L
(COL)
Terminal Functions
Pin Numbers
Name
IF(IN)
GND
VS
Description
1
2
3
4
5
6
Signal input
Negative power supply input
Positive power supply input
Output transistor load inductor
Signal output
L(COL)
IF(OUT)
BIAS
Bias current input
SIMPLIFIED SCHEMATIC
V
S
L
(COL)
Bias
IF
(OUT)
IF
(IN)
GND
3
THS9001
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SLOS426A–NOVEMBER 2003–REVISED FEBRUARY 2004
TYPICAL CHARACTERISTICS
TABLE OF GRAPHS
FIGURE
S21 Frequency response
1
2
S22 Frequency response
S11 Frequency response
S12 Frequency response
S21 vs R(Bias)
3
4
5
Output power vs Input power
OIP2 vs Frequency
6
7
Noise figure vs Frequency
OIP3 vs Frequency
8
9
IS
Supply current vs R(Bias)
S21 Frequency response
S22 Frequency response
S11 Frequency response
S12 Frequency response
Noise figure vs Frequency
OIP2 vs Frequency
10
11
12
13
14
15
16
17
18
Output power vs Input power
OIP3 vs Frequency
S-Parameters of THS9001 as mounted on the EVM with VS = 5 V, R(BIAS) = 237 Ω, and L(COL) = 68 nH to 470 nH
at room temp.
S21 FREQUENCY RESPONSE
S22 FREQUENCY RESPONSE
= 100 nH
17
16
15
14
13
12
11
10
0
L
(COL)
V
S
= 5 V,
L
(COL)
= 470 nH
R
(BIAS)
= 237W,
L
(COL)
= 220 nH
L
= 330 nH
(COL)
L
(COL)
= 68 nH
−5
−10
L
= 220 nH
L
= 100 nH
(COL)
(COL)
−15
−20
L
= 330 nH
(COL)
L
(COL)
= 68 nH
L
(COL)
= 470 nH
V
S
= 5 V,
R
(BIAS)
= 237W,
1 M
10 M
100 M
1 G
1 M
10 M
100 M
1 G
f − Frequency − Hz
f − Frequency − Hz
Figure 1.
Figure 2.
4
THS9001
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SLOS426A–NOVEMBER 2003–REVISED FEBRUARY 2004
TYPICAL CHARACTERISTICS (continued)
S11 FREQUENCY RESPONSE
S12 FREQUENCY RESPONSE
−15
0
V
R
= 5 V,
S
L
(COL)
= 68 nH
= 237W
(BIAS)
−5
L
(COL)
= 470 nH
−20
−25
−30
−10
−15
−20
−25
−30
L
= 100 nH
= 220 nH
(COL)
L
(COL)
= 330 nH
L
(COL)
L
= 330 nH
(COL)
L
= 220 nH
= 100 nH
(COL)
L
(COL)
= 470 nH
L
(COL)
L
= 68 nH
(COL)
−35
−40
V
S
= 5 V,
−35
−40
R
(BIAS)
= 237W,
1 M
10 M
100 M
1 G
1 M
10 M
100 M
1 G
f − Frequency − Hz
f − Frequency − Hz
Figure 3.
Figure 4.
S-Parameters of THS9001 as mounted on the EVM with VS = 3 V and 5 V, R(BIAS) = various, and L(COL) = 470 nH
at room temp.
S21
vs
R(BIAS)
OUTPUT POWER
vs
INPUT POWER
17
16
15
14
13
12
11
10
22
21
20
19
18
17
16
15
14
13
12
11
10
V
= 5 V, I = 99 mA
S
S
R
= 56.2 W, V = 3 V
S
(BIAS)
V
= 5 V, I = 75 mA
S
S
R
S
= 237 W,
(BIAS)
= 5 V
V
S
= 5 V, I = 50 mA
S
V
R
= 97.7W, V = 3 V
S
(BIAS)
R
= 340 W, V = 5 V
S
(BIAS)
V
S
= 3 V, I = 94 mA
S
R
(BIAS)
= 549 W V = 5 V
S
V
S
= 3 V, I = 70 mA
S
R
= 174 W, V = 3 V
S
(BIAS)
V
= 3 V, I = 49 mA
S
S
V
S
= 3 V to 5 V,
L
= 470 nH
(col)
f = 100 MHz
10 12 14
1 G
10 M
100 M
1 M
−6 −4 −2
0
2
4
6
8
f − Frequency − Hz
P − Input Power − dBm
I
Figure 5.
Figure 6.
5
THS9001
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SLOS426A–NOVEMBER 2003–REVISED FEBRUARY 2004
TYPICAL CHARACTERISTICS (continued)
OIP2
vs
FREQUENCY
NOISE FIGURE
vs
FREQUENCY
5
50
L
(COL)
= 470 nH
V
= 3 V,
V
= 5 V,
S
S
48
46
44
42
40
38
36
34
4.75
4.5
4.25
4
I
= 94 mA
I
S
= 99 mA
S
V
S
= 5 V, I = 99 mA
S
V
S
= 5 V, I = 75 mA
S
V
S
= 3 V, I = 94 mA
S
V
S
= 5 V, I = 50 mA
S
V
S
= 5 V,
V
= 3 V,
S
S
I
= 75 mA
3.75
3.5
V = 3 V, I = 49 mA
S S
I
= 70 mA
S
V
S
= 3 V, I = 70 mA
S
3.25
3
V
S
= 3 V,
= 49 mA
V
S
= 5 V,
= 50 mA
S
I
S
I
50
100
150
300
50
150
250
350
450
500
0
200
250
f − Frequency − MHz
f − Frequency − MHz
Figure 7.
Figure 8.
OIP3
vs
FREQUENCY
SUPPLY CURRENT
vs
R(BIAS)
40
200
180
160
140
120
100
80
L
= 470 nH
(COL)
V
= 5 V, I = 99 mA
S
S
38
36
34
32
30
28
26
24
V
= 5 V, I = 75 mA
S
S
V
S
= 3 V, I = 94 mA
S
V
= 3 V, I = 70 mA
S
S
V
S
= 5 V
V
= 5 V, I = 50 mA
S
S
V
S
= 3 V
60
V
S
= 3 V, I = 49 mA
S
40
20
0
100
200
300
400
500
50
150
250
R
350
− W
450
550
f − Frequency − MHz
(BIAS)
Figure 9.
Figure 10.
6
THS9001
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SLOS426A–NOVEMBER 2003–REVISED FEBRUARY 2004
TYPICAL CHARACTERISTICS (continued)
THS9001 as mounted on the EVM with VS = 5 V, R(BIAS) = 237 Ω, and L(COL) = 470 nH at 40°C, 25°C, and 85°C.
S21 FREQUENCY RESPONSE
S22 FREQUENCY RESPONSE
17
16
15
14
13
12
0
−455C
V
= 5 V,
S
−2
R
L
= 237 W
= 470 nH
(BIAS)
(COL)
,
−4
−6
−8
255C
855C
−10
−12
855C
−14
−16
−18
−20
255C
V
R
L
= 5 V,
S
11
10
= 237 W,
(BIAS)
−455C
= 470 nH
(col)
1 M
10 M
100 M
1 G
10 M
100 M
1 G
1 M
f − Frequency − Hz
f − Frequency − Hz
Figure 11.
Figure 12.
S11 FREQUENCY RESPONSE
S12 FREQUENCY RESPONSE
−15
−20
−25
−30
0
−5
V
= 5 V,
S
V
= 5 V,
S
R
L
= 237 W
= 470 nH
(BIAS)
(COL)
,
R
(BIAS)
(COL)
= 237 W
,
= 470 nH
L
−10
−455C
−15
−20
−25
−30
−35
255C
855C
855C
−455C
−35
−40
−40
−45
255C
1 M
10 M
100 M
1 G
1 M
10 M
100 M
1 G
f − Frequency − Hz
f − Frequency − MHz
Figure 13.
Figure 14.
7
THS9001
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SLOS426A–NOVEMBER 2003–REVISED FEBRUARY 2004
TYPICAL CHARACTERISTICS (continued)
NOISE FIGURE
vs
FREQUENCY
OIP2
vs
FREQUENCY
48
47
46
45
44
43
42
6
V
= 5 V,
S
V
= 5 V,
S
R
(BIAS)
(COL)
= 237 W
= 470 nH
,
−455C
R
L
= 237 W
(BIAS)
,
L
5.5
5
= 470 nH
855C
(COL)
255C
855C
255C
4.5
4
−455C
3.5
3
41
40
50
100
150
200
250
300
0
100
200
300
400
500
f − Frequency − MHz
f − Frequency − MHz
Figure 15.
Figure 16.
OUTPUT POWER
vs
INPUT POWER
OIP3
vs
FREQUENCY
22
40
V
R
= 5 V,
S
V
S
= 5 V,
255C
= 237 W
(BIAS)
,
R
L
= 237 W
= 470 nH
(BIAS)
(COL)
,
21
20
39
38
L
(COL)
= 470 nH
f = 100 MHz
855C
−455C
255C
19
18
17
16
15
14
37
36
35
34
855C
−455C
33
32
100 150 200 250 300 350 400 450 500
f − Frequency − MHz
50
−2
0
2
4
6
8
10
12
P − Input Power − dBm
I
Figure 17.
Figure 18.
8
THS9001
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SLOS426A–NOVEMBER 2003–REVISED FEBRUARY 2004
TYPICAL CHARACTERISTICS
S-Parameters Tables of THS9001 with EVM De-Embedded
VS = 5 V, R(BIAS) = 237 Ω, L(COL) = 470 nH
S21
S11
Phase (deg)
S22
Phase (deg)
S12
Phase (deg)
Frequency
(MHz)
Gain (dB)
Phase (deg)
Gain (dB)
Gain (dB)
Gain (dB)
1.0
-3.5
11.7
15.8
16.3
15.9
15.8
15.7
15.6
15.5
15.3
15.2
15.0
14.9
14.7
14.5
14.4
14.2
14.1
14.0
13.9
13.5
13.0
12.8
11.6
11.1
10.4
10.3
9.7
-165.0
-127.1
-150.1
-170.8
175.7
171.5
165.7
158.2
151.1
144.1
135.3
127.8
121.9
115.4
108.4
100.3
96.0
-2.3
-1.5
-1.1
-14.9
-42.3
-69.3
-90.3
-95.4
-86.5
45.9
-2.6
-2.8
174.8
140.4
99.8
-64.4
-32.4
-23.6
-21.1
-20.6
-20.6
-20.6
-20.7
-20.7
-20.7
-20.6
-20.6
-20.6
-20.6
-20.7
-20.9
-21.0
-21.7
-22.5
-24.0
-26.5
-27.0
-28.0
-34.0
-37.1
-37.8
-31.1
-26.3
-22.7
-20.6
-18.8
-17.2
-15.7
-14.3
-13.1
-12.4
-12.2
-121.7
123.0
79.5
40.7
14.5
9.4
5.0
10.2
-2.2
-5.3
19.7
-6.6
-10.7
-16.2
-16.9
-17.1
-16.8
-16.2
-15.3
-14.2
-13.3
-12.6
-11.8
-10.9
-9.8
64.5
50.1
-16.2
-21.1
-32.3
-28.0
-21.9
-18.9
-16.0
-14.2
-12.8
-11.6
-10.3
-8.9
33.9
69.7
26.4
102.4
150.5
198.1
246.9
307.6
362.8
405.0
452.2
504.7
563.4
595.3
664.5
702.1
741.8
828.1
874.9
924.4
976.7
1031.9
1090.3
1151.9
1217.1
1285.9
1358.6
1435.5
1516.6
1602.4
1693.0
1788.8
1889.9
1996.8
19.9
5.3
14.7
2.1
46.8
10.8
0.1
37.2
6.0
-1.4
27.8
-1.8
-3.9
17.4
-9.2
-5.9
10.9
-16.0
-23.9
-33.0
-45.2
-52.2
-68.3
-79.1
-91.4
-113.2
-126.0
-136.8
-157.8
-172.3
-173.4
179.4
161.9
147.6
134.6
122.6
112.1
101.7
92.4
-8.2
3.0
-10.8
-14.2
-19.3
-22.6
-30.5
-38.6
-44.9
-35.0
-49.0
-62.9
-104.4
107.9
162.5
169.5
137.1
121.9
116.5
105.2
96.0
87.0
79.2
68.8
56.9
48.2
-6.0
-17.4
-23.3
-36.9
-44.6
-54.0
-76.1
-84.6
-93.1
-104.4
-115.7
-122.0
-131.3
-142.3
-151.7
-161.2
-170.1
-178.6
173.2
165.1
157.6
148.8
139.5
-8.2
-9.2
87.0
-6.7
-8.0
80.9
-5.9
-7.3
76.5
-5.1
-6.8
62.2
-4.3
-6.3
54.0
-4.1
-5.9
44.9
-3.6
-5.1
35.9
-3.5
-5.3
33.0
-3.4
-5.8
29.2
-3.3
-5.7
22.2
-3.0
-4.8
4.7
-2.9
-3.9
8.6
0.7
-2.9
-3.6
7.3
-8.3
-2.9
-3.4
5.8
-14.5
-22.7
-28.4
-38.0
-47.9
-51.0
-49.0
-3.0
-3.2
4.6
-3.1
-3.2
3.2
-3.1
-3.1
1.5
-3.1
-3.0
-0.5
-2.5
-4.1
-3.1
-2.9
83.6
-3.2
-2.7
74.4
-3.4
-2.3
65.0
9
THS9001
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SLOS426A–NOVEMBER 2003–REVISED FEBRUARY 2004
APPLICATION INFORMATION
The THS9001 is a medium power, cascadeable, amplifier optimized for high intermediate frequencies in radios.
The amplifier is unconditionally stable and design requires only 2 dc-blocking capacitors, 1 power-supply bypass
capacitor, 1 RF choke, and 1 bias resistor. Refer to Figure 24 for circuit diagram.
The THS9001 operates with a power supply voltage ranging from 2.5 V to 5.5 V.
The value of R(BIAS) sets the bias current to the amplifier. Refer to Figure 10. This allows the designer to trade-off
linearity versus power consumption. R(BIAS) can be removed without damage to the device.
Component selection of C(BYP), CIN, and COUT is not critical. The values shown in Figure 24 were used for all the
data shown in this data sheet.
The amplifier incorporates internal impedance matching to 50 Ω that can be adjusted for various frequencies of
operation by proper selection of L(COL)
.
Figure 19 shows the s-parameters of the part mounted on the standard EVM with VS = 5 V, R(BIAS) = 237Ω , and
L(COL) = 470 nH. With this configuration, the part is very broadband, and achieves greater than 15-dB input and
output return loss from 50 MHz to 325 MHz.
17
16
15
14
13
0
V
= 5 V,
S
S11
R
(BIAS)
(COL)
= 237 W
= 470 nH
,
L
S22
−5
S21
−10
−15
−20
S12
12
−25
−30
11
10
1 M
10 M
100 M
1 G
f − Frequency − Hz
Figure 19. S-Parameters of THS9001 Mounted on the Standard EVM With VS = 5 V, R(BIAS) = 237 Ω,
and L(COL) = 470 nH
10
THS9001
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SLOS426A–NOVEMBER 2003–REVISED FEBRUARY 2004
APPLICATION INFORMATION (continued)
Figure 20 Shows an example of a single conversion receiver architecture and where the THS9001 would
typically be used.
900 MHz − 2 GHz
900 MHz − 2 GHz
Image Rejection
IF Amp 2
IF Amp 1
Filter
LNA 2
Mixer
IF SAW
PGA
IF SAW
ADC
LNA 1
LO Drive
Amp 1
LO Drive
Amp 2
RX LO
THS9001
2x for Diversity
Figure 20. Example Single Conversion Receiver Architecture
Figure 21 shows an example of a dual conversion receiver architecture and where the THS9001 would typically
be used.
900 MHz − 2 GHz
Image Reject
Filter
100 MHz − 300 MHz
1st IF Amp
20 MHz − 70 MHz
2nd IF Amp1
2nd IF
Alias Filter
2nd IF SAW
ADC
2nd Mixer
PGA
1st IF SAW
1st Mixer
Amp2
LNA 1
LNA 2
LO1 Drive LO1 Drive
Amp 1 Amp 2
LO2 DriveLO2 Drive
Amp 1
RX LO 1
RX LO2
Amp 2
THS9001
2x for Diversity
Figure 21. Example Dual Conversion Receiver Architecture
Figure 22 shows an example of a dual conversion transmitter architecture and where the THS9001 would
typically be used.
BB
100 MHz − 300 MHz
900 MHz − 2 GHz
1st IF amp
PA
DAC
BB Amp Alias Filter 1st Mixer
IF SAW
PGA
2nd Mixer
LO2 Drive
Amp 2
LO2 Drive
Amp 1
LO1 Drive
Amp 2
LO1 Drive
Amp 1
RX LO1
RX LO2
THS9001
2x for Diversity
Figure 22. Example Dual Conversion Transmitter Architecture
11
THS9001
www.ti.com
SLOS426A–NOVEMBER 2003–REVISED FEBRUARY 2004
APPLICATION INFORMATION (continued)
Figure 23 shows the THS9001 and Sawtek #854916 SAW filter frequency response along with the frequency
response of the SAW filter alone. The SAW filter has a center frequency of 140 MHz with 10-MHz bandwidth and
8-dB insertion loss. It can be seen that the frequency response with the THS9001 is the same as with the SAW
except for a 15-dB gain. The THS9001 is mounted on the standard EVM with VS = 5 V, R(BIAS) = 237 Ω, and
L(COL) = 470 nH. Note the amplifier does not add artifacts to the signal.
SAW + THS90001
SAW
THS9001
RED =
SAW
140 MHz
SAW Only
GREEN =
140 MHz SAW: Sawtek #854916
Figure 23. Frequency Response of the THS9001 and SAW Filter, and SAW Filter Only
V
S
THS9001
R
(BIAS)
C
IN
IF
(IN)
1
6
1 nF
IF
(QUT)
C
OUT
5
4
2
3
1 nF
L
(COL)
C
(BYP)
0.1 mF
V
S
Figure 24. THS9001 Recommended Circuit (Used for all Tests)
12
THS9001
www.ti.com
SLOS426A–NOVEMBER 2003–REVISED FEBRUARY 2004
APPLICATION INFORMATION (continued)
Evaluation Module
Table 1 is the bill of materials, and Figure 25 and Figure 26 show the EVM layout.
Bill Of Materials
ITEM
1
DESCRIPTION
Cap, 0.1 µF, ceramic, X7R, 50 V
Cap, 1000 pF, ceramic, NPO, 100 V
Inductor, 470 nH, 5%
REF DES
C1
QTY
1
PART NUMBER(1)
(AVX) 08055C104KAT2A
2
C2, C3
L1
2
(AVX) 08051A102JAT2A
3
1
(Coilcraft) 0805CS-471XJBC
(Phycomp) 9C08052A2370FKHFT
4
Resistor, 237 Ω, 1/8 W, 1%
Open
R1
1
5
TR1
1
6
Jack, banana receptance, 0.25" dia.
Connector, edge, SMA PCB jack
Standoff, 4-40 Hex, 0.625" Length
Screw, Phillips, 4-40, .250"
IC, THS9001
J3, J4
J1, J2
2
(SPC) 813
7
2
(Johnson) 142-0701-801
(KEYSTONE) 1808
8
4
9
4
SHR-0440-016-SN
10
11
U1
1
(TI) THS9001DBV
Board, printed-circuit
1
(TI) EDGE # 6453522 Rev.A
(1) The manufacturer's part numbers are used for test purposes only.
Figure 25. EVM Top Layout
Figure 26. EVM Bottom Layout
13
THS9001
www.ti.com
SLOS426A–NOVEMBER 2003–REVISED FEBRUARY 2004
0.085
0.053
0.008
Pin 1
0.040
0.032
0.032
Top View
Figure 27. THS9001 Recommended Footprint (dimensions in inches)
14
PACKAGE OPTION ADDENDUM
www.ti.com
30-Mar-2005
PACKAGING INFORMATION
Orderable Device
THS9001DBVR
THS9001DBVT
Status (1)
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
SOT-23
DBV
6
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
SOT-23
DBV
6
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan
-
The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS
&
no Sb/Br)
-
please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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