TIL191 [TI]

Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel; 光电耦合器包括每通道一个砷化镓发光二极管和一个硅npn型晶体管
TIL191
型号: TIL191
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel
光电耦合器包括每通道一个砷化镓发光二极管和一个硅npn型晶体管

晶体 光电 二极管 晶体管
文件: 总6页 (文件大小:87K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A  
TIL191B, TIL192B, TIL193B  
OPTOCOUPLERS  
SOES026B – APRIL 1989 – REVISED APRIL 1998  
Gallium-Arsenide-Diode Infrared Source  
High-Voltage Electrical Isolation 3.535 kV  
Peak (2.5 kV rms)  
Source Is Optically Coupled to Silicon npn  
Phototransistor  
Plastic Dual-In-Line Packages  
UL Listed — File #E65085  
Choice of One, Two, or Four Channels  
Choice of Three Current-Transfer Ratios  
description  
These optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per  
channel. The TIL191 has a single channel in a 4-pin package, the TIL192 has two channels in an 8-package,  
and the TIL193 has four channels in a 16-pin package. The standard devices, TIL191, TIL192, and TIL193, are  
tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and  
100% minimum are designated with the suffix A and B respectively.  
schematic diagrams  
TIL193  
TIL191  
1
16  
1ANODE  
1
1COLLECTOR  
4
3
ANODE  
COLLECTOR  
EMITTER  
15  
14  
1EMITTER  
2
3
1CATHODE  
2ANODE  
2
CATHODE  
2COLLECTOR  
13  
12  
4
5
TIL192  
2EMITTER  
2CATHODE  
3ANODE  
1
8
1ANODE  
1COLLECTOR  
3COLLECTOR  
7
6
11  
10  
1EMITTER  
2
3
3EMITTER  
6
7
1CATHODE  
2ANODE  
3CATHODE  
4ANODE  
2COLLECTOR  
3COLLECTOR  
5
4
9
8
2EMITTER  
2CATHODE  
3EMITTER  
4CATHODE  
absolute maximum ratings at 25°C free-air (unless otherwise noted)  
Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±3.535 kV peak or dc (±2.5 kV rms)  
Collector-emitter voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V  
Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V  
Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V  
Input diode continuous forward current at (or below) 25°C free-air temperature (see Note 3) . . . . . . . 50 mA  
Continuous total power dissipation at (or below) 25°C free-air temperature:  
Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW  
Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW  
Storage temperature range, T  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to 125°C  
stg  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTES: 1. Thisratingappliesforsine-waveoperationat50Hzor60Hz.ThiscapabilityisverifiedbytestinginaccordancewithULrequirements.  
2. This value applies when the base-emitter diode is open circuited.  
3. Derate linearly to 100°C free-air temperature at the rate of 0.67 mA/°C.  
4. Derate linearly to 100°C free-air temperature at the rate of 2 mW/°C.  
5. Derate linearly to 100°C free-air temperature at the rate of 2.67 mW/°C.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A  
TIL191B, TIL192B, TIL193B  
OPTOCOUPLERS  
SOES026B – APRIL 1989 – REVISED APRIL 1998  
electrical characteristics 25°C free-air temperature range (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
35  
7
TYP  
MAX  
UNIT  
V
V
V
Collector-emitter breakdown voltage  
Emitter-collector breakdown voltage  
Input diode static reverse current  
Off-state collector current  
I
I
= 0.5 mA,  
I
I
= 0  
= 0  
(BR)CEO  
C
F
= 100 µA,  
V
(BR)ECO  
C
F
I
R
V
= 5 V  
R
10  
µA  
nA  
I
V
= 24 V,  
I
F
= 0  
100  
C(off))  
CE  
TIL191, TIL192, TIL193  
20%  
50%  
CTR  
Current transfer ratio  
TIL191A, TIL192A, TIL193A  
TIL191B, TIL192B, TIL193B  
I
F
= 5 mA,  
V
CE  
= 5 V  
100%  
V
V
Input diode static forward voltage  
Collector-emitter saturation voltage  
I
I
= 20 mA  
= 5 mA,  
1.4  
0.4  
V
V
F
F
I
C
= 1 mA  
CE(sat)  
F
V
= 0 mA,  
f = 1 MHz,  
in–out  
See Note 6  
C
Input-to-output capacitance  
1
pF  
io  
11  
10  
r
io  
Input-to-output internal resistance  
V
= ±1 mA, See Note 6  
in–out  
NOTE 6: These parameters are measured between all input diode leads shorted together and all phototransistor leads shorted together.  
switching characteristics at 25°C free-air temperature  
PARAMETER  
TEST CONDITIONS  
= 5 V, = 2 mA,  
MIN  
TYP  
6
MAX  
UNIT  
t
t
Rise time  
Fall time  
V
R
I
C(on)  
r
CC  
= 100 , See Figure 1  
µs  
L
6
f
PARAMETER MEASUREMENT INFORMATION  
47 Ω  
Input (see Note A)  
Output (see Note B)  
Input  
0 V  
t
r
t
f
+
90%  
10%  
90%  
R
= 100 Ω  
L
Output  
V
CC  
= 5 V  
10%  
NOTE C. Adjust amplitude of input  
pulse for I = 2 mA  
C(on)  
VOLTAGE WAVEFORMS  
NOTES: A. The input waveform is supplied by a generator with the following characteristics: Z = 50 , t 15 ns, duty cycle 1%,  
TEST CIRCUIT  
OUT  
r
t
w
= 100 µs.  
B. The output waveform is monitored on a oscilloscope with the following characteristic: t 12 ns, R 1 M, C 20 pF.  
r
in in  
Figure 1. Switching Times  
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A  
TIL191B, TIL192B, TIL193B  
OPTOCOUPLERS  
SOES026B – APRIL 1989 – REVISED APRIL 1998  
TYPICAL CHARACTERISTICS  
TIL191, TIL192, TIL193  
COLLECTOR CURRENT  
vs  
FORWARD CURRENT  
vs  
FORWARD VOLTAGE  
COLLECTOR-EMITTER VOLTAGE  
160  
140  
120  
100  
80  
16  
14  
12  
10  
8
I
T
= 0  
= 25°C  
I
F
I
F
I
F
= 12 mA  
= 10 mA  
= 8 mA  
B
A
T
A
= 25°C  
T
A
= 70°C  
60  
6
I
I
= 5 mA  
= 2 mA  
F
40  
4
T
= 55°C  
A
20  
0
2
0
F
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
0
1
2
3
4
5
6
7
8
9
10  
V
CE  
– Collector-Emitter Voltage – V  
V
F
– Forward Voltage – V  
Figure 2  
Figure 3  
ON-STATE COLLECTOR CURRENT  
(RELATIVE TO VALUE AT 25°C)  
vs  
ON-STATE COLLECTOR CURRENT (NORMALIZED)  
vs  
INPUT DIODE FORWARD CURRENT  
FREE-AIR TEMPERATURE  
1.2  
1.1  
1
100  
V
= 5 V  
V
I
= 5 V  
= 5 mA  
= 0  
CE  
Normalized to I = 5 mA  
CE  
F
F
T
A
= 25°C  
I
B
10  
1
0.9  
0.8  
0.1  
0.7  
0.6  
0.01  
0.001  
0.5  
0.4  
50  
25  
0
25  
50  
75  
100  
100  
0.1  
0.4  
1
4
10  
40  
T
A
– Free-Air Temperature – °C  
I
F
– Input Diode Forward Current – mA  
Figure 4  
Figure 5  
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A  
TIL191B, TIL192B, TIL193B  
OPTOCOUPLERS  
SOES026B – APRIL 1989 – REVISED APRIL 1998  
TYPICAL CHARACTERISTICS  
COLLECTOR-EMITTER SATURATION VOLTAGE  
vs  
FREE-AIR TEMPERATURE  
0.24  
0.20  
0.16  
0.12  
0.08  
I
I
= 5 mA  
= 1 mA  
F
C
0.04  
0
50  
25  
0
25  
50  
75  
100  
T
A
– Free-Air Temperature – °C  
Figure 6  
APPLICATION INFORMATION  
V
cc  
= 5 V  
5 V  
430 Ω  
7.5 kΩ  
OUTPUT  
SN7404  
SN7404  
TIL191  
INPUT  
Figure 7  
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A  
TIL191B, TIL192B, TIL193B  
OPTOCOUPLERS  
SOES026B – APRIL 1989 – REVISED APRIL 1998  
MECHANICAL INFORMATION  
4,80 (0.189)  
4,19 (0.165)  
TIL191  
Pin 1  
10,2 (0.401)  
9,2 (0.362)  
TIL192  
Pin 1  
21,1 (0.831)  
18,5 (0.728)  
TIL193  
C
C
L
L
7,62 (0.300) T.P.  
(see Note A)  
Pin 1  
6,76 (0.266)  
6,25 (0.246)  
0,51 (0.125) MIN  
3,81 (0.150)  
3,30 (0.130)  
5,84 (0.230) MAX  
Seating Plane  
105°  
90°  
1,27 (0.050)  
1,12 (0.044)  
3,81 (0.150)  
2,54 (0.100)  
2,79 (0.110)  
2,29 (0.090)  
0,58 (0.023)  
0,43 (0.017)  
NOTES: A. Each pin centerline is located within 0,25 (0.010) of its true longitudinal position.  
B. All linear dimensions are given in millimeters and parenthetically given in inches.  
Figure 8. Mechanical Information  
5
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor  
product or service without notice, and advises its customers to obtain the latest version of relevant information  
to verify, before placing orders, that the information being relied on is current and complete.  
TI warrants performance of its semiconductor products and related software to the specifications applicable at  
the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are  
utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each  
device is not necessarily performed, except those mandated by government requirements.  
Certain applications using semiconductor products may involve potential risks of death, personal injury, or  
severe property or environmental damage (“Critical Applications”).  
TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED  
TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS.  
Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI  
products in such applications requires the written approval of an appropriate TI officer. Questions concerning  
potential risk applications should be directed to TI through a local SC sales office.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards should be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance, customer product design, software performance, or  
infringement of patents or services described herein. Nor does TI warrant or represent that any license, either  
express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property  
right of TI covering or relating to any combination, machine, or process in which such semiconductor products  
or services might be or are used.  
Copyright 1998, Texas Instruments Incorporated  

相关型号:

TIL191-G

Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
ISOCOM

TIL191A

Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel
TI

TIL191A

HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISOCOM

TIL191A-G

Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
ISOCOM

TIL191A-SM

暂无描述
ISOCOM

TIL191ASM

Transistor Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT PACKAGE-4
ISOCOM

TIL191ASMTR

Transistor Output Optocoupler
ISOCOM

TIL191AX

Transistor Output Optocoupler,
ISOCOM

TIL191AXG

Transistor Output Optocoupler,
ISOCOM

TIL191AXSM

Transistor Output Optocoupler,
ISOCOM

TIL191AXSMT&R

暂无描述
ISOCOM

TIL191B

Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel
TI