TLC251CPWR [TI]
OP-AMP, 12000uV OFFSET-MAX, 1.7MHz BAND WIDTH, PDSO8, TSSOP-8;
| 型号： | TLC251CPWR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | OP-AMP, 12000uV OFFSET-MAX, 1.7MHz BAND WIDTH, PDSO8, TSSOP-8 放大器 光电二极管 |
| 文件： | 总22页 (文件大小：603K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
D OR P PACKAGE
(TOP VIEW)
Wide Range of Supply Voltages
1.4-V to 16-V
True Single-Supply Operation
OFFSET N1
IN–
BIAS SELECT
1
2
3
4
8
7
6
5
Common-Mode Input Voltage Range
Includes the Negative Rail
V
DD
IN+
OUT
OFFSET N2
V
/GND
Low Noise . . . 30 nV/√Hz Typ at 1-kHz
DD–
(High Bias)
ESD Protection Exceeds 2000 V Per
MIL-STD-833C, Method 3015.1
symbol
description
BIAS SELECT
The TLC251C, TLC251AC, and TLC251BC are
low-cost, low-power programmable operational
amplifiers designed to operate with single or dual
supplies. Unlike traditional metal-gate CMOS
operational amplifiers, these devices utilize Texas
+
–
IN+
IN–
OUT
Instruments silicon-gate LinCMOS
giving them stable input offset voltages without
sacrificing the advantages of metal-gate CMOS.
process,
OFFSET N1
OFFSET N2
This series of parts is available in selected grades of input offset voltage and can be nulled with one external
potentiometer. Because the input common-mode range extends to the negative rail and the power consumption
is extremely low, this family is ideally suited for battery-powered or energy-conserving applications. A
bias-select pin can be used to program one of three ac performance and power-dissipation levels to suit the
application. The series features operation down to a 1.4-V supply and is stable at unity gain.
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised
in handling these devices as exposure to ESD may result in a degradation of the device parametric
performance.
Because of the extremely high input impedance and low input bias and offset currents, applications for the
TLC251C series include many areas that have previously been limited to BIFET and NFET product types. Any
circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective
use of these devices. Many features associated with bipolar technology are available with LinCMOS
operational amplifiers without the power penalties of traditional bipolar devices. Remote and inaccessible
equipment applications are possible using the low-voltage and low-power capabilities of the TLC251C series.
Inaddition, bydrivingthebias-selectinputwithalogicsignalfromamicroprocessor, theseoperationalamplifiers
can have software-controlled performance and power consumption. The TLC251C series is well suited to solve
the difficult problems associated with single battery and solar cell-powered applications.
The TLC251C series is characterized for operation from 0°C to 70°C.
AVAILABLE OPTIONS
PACKAGED DEVICES
V
max
CHIP FORM
(Y)
IO
T
A
SMALL OUTLINE
(D)
PLASTIC DIP
(P)
AT 25°C
10 mV
5 mV
2 mV
TLC251CD
TLC251ACD
TLC251BCD
TLC251CP
TLC251ACP
TLC251BCP
TLC251Y
—
—
0°C to 70°C
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC251CDR). Chips are
tested at 25°C.
LinCMOS is a trademark of Texas Instruments.
Copyright 2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
schematic
7
V
DD
Current
Control
ESD-
Protective
Network
8
BIAS
SELECT
ESD-
Protective
Network
3
2
IN+
ESD-
Protective
Network
IN–
6
OUT
1
OFFSET
N1
5
4
OFFSET
N2
V
/GND
DD–
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
TLC251Y chip information
These chips, properly assembled, display characteristics similar to the TLC251C. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
V
DD
(2)
(1)
(8)
(7)
(8)
(7)
BIAS SELECT
IN+
(3)
(2)
+
(6)
OUT
–
IN–
(1)
(5)
OFFSET N1
OFFSET N2
(4)
/GND
48
V
DD–
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
= 150°C
T
JMAX
(3)
(5)
(6)
(4)
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
55
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V
DD
Differential input voltage, V (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
Input voltage range, V (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 18 V
Duration of short circuit at (or below) 25°C free-air temperature (see Note 3) . . . . . . . . . . . . . . . . . . unlimited
ID
I
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
A
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to V
/GND.
DD–
2. Differential voltages are at IN+ with respect to IN–.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure the maximum dissipation
rating is not exceeded.
DISSIPATION RATING TABLE
T
≤ 25°C
DERATING FACTOR
T = 70°C
A
POWER RATING
A
PACKAGE
POWER RATING
ABOVE T = 25°C
A
D
P
725 mW
5.8 mW/°C
8.0 mW/°C
464 mW
1000 mW
640 mW
recommended operating conditions
MIN
1.4
MAX
16
0.2
4
UNIT
Supply voltage, V
DD
V
V
DD
V
DD
V
DD
V
DD
= 1.4 V
= 5 V
0
–0.2
–0.2
–0.2
0
Common-mode input voltage, V
IC
V
= 10 V
= 16 V
9
14
70
Operating free-air temperature, T
°C
A
See Application
Information
Bias-select voltage
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature
TLC251C, TLC251AC, TLC251BC
TEST
CONDITIONS
†
PARAMETER
V
= 5 V
V
= 10 V
TYP
UNIT
T
A
DD
TYP
DD
MIN
MAX
10
12
5
MIN
MAX
10
12
5
25°C
Full range
25°C
1.1
1.1
TLC251C
V
V
R
R
= 1.4 V,
= 0 V,
= 50 Ω,
= 10 kΩ
O
S
L
0.9
0.9
V
IO
Input offset voltage
TLC251AC
TLC251BC
mV
Full range
25°C
6.5
2
6.5
2
0.34
1.8
0.39
Full range
3
3
Average temperature coefficient of
input offset voltage
25°C to
70°C
α
2
µV/°C
VIO
25°C
70°C
25°C
70°C
0.1
7
60
300
60
0.1
7
60
300
60
V
V
= V /2,
DD
O
IC
I
Input offset current (see Note 4)
Input bias current (see Note 4)
pA
IO
= V /2
DD
0.6
40
0.7
50
V
V
= V /2,
DD
O
IC
I
IB
pA
V
= V /2
600
600
DD
–0.2
to
–0.3
to
–0.2
to
–0.3
to
25°C
4
4.2
9
9.2
Common-mode input voltage
range (see Note 5)
V
ICR
–0.2
to
–0.2
to
Full range
V
V
3.5
8.5
25°C
0°C
3.2
3
3.8
3.8
3.8
0
8
7.8
7.8
8.5
8.5
8.4
0
V
R
= 100 mV,
= 10 kΩ
ID
L
V
V
High-level output voltage
Low-level output voltage
OH
70°C
25°C
0°C
3
50
50
50
50
50
50
V
= –100 mV,
= 0
ID
0
0
mV
V/mV
dB
OL
I
OL
70°C
25°C
0°C
0
0
5
4
23
10
7.5
7.5
65
60
60
65
60
60
36
Large-signal differential voltage
amplification
R
= 10 kΩ,
L
A
VD
27
42
See Note 6
70°C
25°C
0°C
4
20
32
65
60
60
65
60
60
80
85
CMRR Common-mode rejection ratio
V
IC
= V
min
ICR
84
88
70°C
25°C
0°C
85
88
95
95
Supply-voltage rejection ratio
V
V
= 5 V to 10 V,
= 1.4 V
DD
O
k
94
94
dB
µA
µA
SVR
I(SEL)
DD
(∆V /∆V
DD IO
)
70°C
25°C
25°C
0°C
96
96
I
I
Input current (BIAS SELECT)
Supply current
V
= 0
–1.4
675
775
575
–1.9
950
1125
750
I(SEL)
1600
1800
1300
2000
2200
1700
V
V
= V /2,
DD
O
IC
= V /2,
DD
No load
70°C
†
Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At V
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.
DD
O
DD O
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
HIGH-BIAS MODE
operating characteristics, V
= 5 V
DD
TLC251C, TLC251AC,
TLC251BC
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
3.6
4
MAX
25°C
0°C
V
= 1 V
I(PP)
I(PP)
70°C
25°C
0°C
3
SR
Slew rate at unity gain
R
= 10 kΩ,
C
= 20 pF
V/µs
L
L
2.9
3.1
2.5
25
V
= 2.5 V
70°C
25°C
25°C
0°C
V
B
Equivalent input noise voltage
f = 1 kHz,
R
C
= 20 Ω
nV/√Hz
n
S
L
320
340
260
1.7
2
Maximum output-swing bandwidth
Unity-gain bandwidth
Phase margin
V
O
= V
,
= 20 pF,
R = 10 kΩ
L
kHz
OM
OH
70°C
25°C
0°C
B
1
V = 10 mV,
I
C
= 20 pF
MHz
L
70°C
25°C
0°C
1.3
46°
47°
44°
φ
m
V = 10 mV,
I
f = B ,
C = 20 pF
L
1
70°C
operating characteristics, V
= 10 V
DD
TLC251C, TLC251AC,
TLC251BC
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
5.3
5.9
4.3
4.6
5.1
3.8
25
MAX
25°C
0°C
V
= 1 V
I(PP)
I(PP)
70°C
25°C
0°C
SR
Slew rate at unity gain
R
= 10 kΩ,
C
= 20 pF
V/µs
L
L
V
= 5.5 V
70°C
25°C
25°C
0°C
V
B
Equivalent input noise voltage
f = 1 kHz,
R
C
= 20 Ω
nV/√Hz
n
S
L
200
220
140
2.2
2.5
1.8
49°
50°
46°
Maximum output-swing bandwidth
Unity-gain bandwidth
Phase margin
V
O
= V
,
= 20 pF,
R = 10 kΩ
L
kHz
OM
OH
70°C
25°C
0°C
B
1
V = 10 mV,
I
C
= 20 pF
MHz
L
70°C
25°C
0°C
φ
m
V = 10 mV,
I
f = B ,
C = 20 pF
L
1
70°C
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
MEDIUM-BIAS MODE
electrical characteristics at specified free-air temperature
TLC251C, TLC251AC, TLC251BC
TEST
CONDITIONS
†
PARAMETER
V
= 5 V
V
= 10 V
TYP
UNIT
T
A
DD
TYP
DD
MIN
MAX
10
12
5
MIN
MAX
10
12
5
25°C
Full range
25°C
1.1
1.1
TLC251C
V
V
R
R
= 1.4 V,
= 0 V,
= 50 Ω,
= 10 kΩ
O
S
L
0.9
0.9
V
IO
Input offset voltage
TLC251AC
TLC251BC
mV
Full range
25°C
6.5
2
6.5
2
0.34
1.7
0.39
Full range
3
3
Average temperature coefficient of
input offset voltage
25°C to
70°C
α
2.1
µV/°C
VIO
25°C
70°C
25°C
70°C
0.1
7
60
300
60
0.1
7
60
300
60
V
V
= V /2,
DD
O
IC
I
Input offset current (see Note 4)
Input bias current (see Note 4)
pA
IO
= V /2
DD
0.6
40
0.7
50
V
V
= V /2,
DD
O
IC
I
IB
pA
V
= V /2
600
600
DD
–0.2
to
–0.3
to
–0.2
to
–0.3
to
25°C
4
4.2
9
9.2
Common-mode input voltage
range (see Note 5)
V
ICR
–0.2
to
–0.2
to
Full range
V
V
3.5
8.5
25°C
0°C
3.2
3
3.9
3.9
4
8
7.8
7.8
8.7
8.7
8.7
0
V
R
= 100 mV,
= 10 kΩ
ID
L
V
V
High-level output voltage
Low-level output voltage
OH
70°C
25°C
0°C
3
0
50
50
50
50
50
50
V
= –100 mV,
= 0
ID
0
0
mV
V/mV
dB
OL
I
OL
70°C
25°C
0°C
0
0
25
15
15
65
60
60
70
60
60
170
200
140
91
25
15
15
65
60
60
70
60
60
275
320
230
94
Large-signal differential voltage
amplification
R
= 10 kΩ,
L
A
VD
See Note 6
70°C
25°C
0°C
CMRR Common-mode rejection ratio
V
IC
= V
min
ICR
91
94
70°C
25°C
0°C
92
94
93
93
Supply-voltage rejection ratio
V
V
= 5 V to 10 V,
DD
= 1.4 V
O
k
92
92
dB
nA
µA
SVR
I(SEL)
DD
(∆V /∆V
DD IO
)
70°C
25°C
25°C
0°C
94
94
I
I
Input current (BIAS SELECT)
Supply current
V
= V /2
DD
–130
105
125
85
–160
143
173
110
I(SEL)
280
320
220
300
400
280
V
V
= V /2,
DD
O
IC
= V /2,
DD
No load
70°C
†
Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At V
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.
DD
O
DD O
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
MEDIUM-BIAS MODE
operating characteristics, V
= 5 V
DD
TLC251C, TLC251AC,
TLC251BC
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
0.43
0.46
0.36
0.40
0.43
0.34
32
MAX
25°C
0°C
V
= 1 V
I(PP)
I(PP)
70°C
25°C
0°C
SR
Slew rate at unity gain
R
= 100 kΩ,
C
= 20 pF
V/µs
L
L
V
= 2.5 V
70°C
25°C
25°C
0°C
V
B
Equivalent input noise voltage
f = 1 kHz,
R
C
= 20 Ω
nV/√Hz
n
S
L
55
Maximum output-swing bandwidth
Unity-gain bandwidth
Phase margin
V
O
= V
,
= 20 pF,
R = 100 kΩ
L
60
kHz
OM
OH
70°C
25°C
0°C
50
525
600
400
40°
41°
39°
B
1
V = 10 mV,
I
C
= 20 pF
kHz
L
70°C
25°C
0°C
φ
m
V = 10 mV,
I
f = B ,
C = 20 pF
L
1
70°C
operating characteristics, V
= 10 V
DD
TLC251C, TLC251AC,
TLC251BC
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
0.62
0.67
0.51
0.56
0.61
0.46
32
MAX
25°C
0°C
V
= 1 V
I(PP)
I(PP)
70°C
25°C
0°C
SR
Slew rate at unity gain
R
= 100 kΩ,
C
= 20 pF
V/µs
L
L
V
= 5.5 V
70°C
25°C
25°C
0°C
V
B
Equivalent input noise voltage
f = 1 kHz,
R
C
= 20 Ω
nV/√Hz
n
S
L
35
Maximum output-swing bandwidth
Unity-gain bandwidth
Phase margin
V
O
= V
,
= 20 pF,
R = 100 kΩ
L
40
kHz
OM
OH
70°C
25°C
0°C
30
635
710
510
43°
44°
42°
B
1
V = 10 mV,
I
C
= 20 pF
kHz
L
70°C
25°C
0°C
φ
m
V = 10 mV,
I
f = B ,
C = 20 pF
L
1
70°C
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
LOW-BIAS MODE
electrical characteristics at specified free-air temperature
TLC251C, TLC251AC, TLC251BC
TEST
CONDITIONS
†
PARAMETER
V
= 5 V
V
= 10 V
TYP
UNIT
T
A
DD
TYP
DD
MIN
MAX
10
12
5
MIN
MAX
10
12
5
25°C
Full range
25°C
1.1
1.1
TLC251C
V
V
R
R
= 1.4 V,
= 0 V,
= 50 Ω,
= 10 MΩ
O
S
L
0.9
0.9
V
IO
Input offset voltage
TLC251AC
TLC251BC
mV
Full range
25°C
6.5
2
6.5
2
0.24
1.1
0.26
Full range
3
3
Average temperature coefficient of
input offset voltage
25°C to
70°C
α
1
µV/°C
VIO
25°C
70°C
25°C
70°C
0.1
7
60
300
60
0.1
7
60
300
60
V
V
= V /2,
DD
O
IC
I
Input offset current (see Note 4)
Input bias current (see Note 4)
pA
IO
= V /2
DD
0.6
40
0.7
50
V
V
= V /2,
DD
O
IC
I
IB
pA
V
= V /2
600
600
DD
–0.2
to
–0.3
to
–0.2
to
–0.3
to
25°C
4
4.2
9
9.2
Common-mode input voltage
range (see Note 5)
V
ICR
–0.2
to
–0.2
to
Full range
V
V
3.5
8.5
25°C
0°C
3.2
3
4.1
4.1
4.2
0
8
7.8
7.8
8.9
8.9
8.9
0
V
R
= 100 mV,
= 1 MΩ
ID
L
V
V
High-level output voltage
Low-level output voltage
OH
70°C
25°C
0°C
3
50
50
50
50
50
50
V
= –100 mV,
= 0
ID
0
0
mV
V/mV
dB
OL
I
OL
70°C
25°C
0°C
0
0
50
50
50
65
60
60
70
60
60
520
700
380
94
95
95
97
97
98
65
10
12
8
50
50
50
65
60
60
70
60
60
870
1030
660
97
Large-signal differential voltage
amplification
R
= 1 MΩ,
L
A
VD
See Note 6
70°C
25°C
0°C
CMRR Common-mode rejection ratio
V
IC
= V
min
ICR
97
70°C
25°C
0°C
97
97
Supply-voltage rejection ratio
V
V
= 5 V to 10 V,
DD
= 1.4 V
O
k
97
dB
nA
µA
SVR
I(SEL)
DD
(∆V /∆V
DD IO
)
70°C
25°C
25°C
0°C
98
I
I
Input current (BIAS SELECT)
Supply current
V
= V
95
I(SEL)
DD
17
21
14
14
23
33
20
V
V
= V /2,
DD
O
IC
= V /2,
18
DD
No load
70°C
11
†
Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At V
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.
DD
O
DD O
9
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TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
LOW-BIAS MODE
operating characteristics, V
= 5 V
DD
TLC251C, TLC251AC,
TLC251BC
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
0.03
0.04
0.03
0.03
0.03
0.02
68
MAX
25°C
0°C
V
= 1 V
I(PP)
I(PP)
70°C
25°C
0°C
SR
Slew rate at unity gain
R
= 1 MΩ,
C
= 20 pF
V/µs
L
L
V
= 2.5 V
70°C
25°C
25°C
0°C
V
B
Equivalent input noise voltage
f = 1 kHz,
R
C
= 20 Ω
nV/√Hz
n
S
L
5
Maximum output-swing bandwidth
Unity-gain bandwidth
Phase margin
V
O
= V
,
= 20 pF,
R = 1 MΩ
L
6
kHz
OM
OH
70°C
25°C
0°C
4.5
85
B
1
V = 10 mV,
I
C
= 20 pF
100
65
kHz
L
70°C
25°C
0°C
34°
36°
30°
φ
m
V = 10 mV,
I
f = B ,
C = 20 pF
L
1
70°C
operating characteristics, V
= 10 V
DD
TLC251C, TLC251AC,
TLC251BC
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
0.05
0.05
0.04
0.04
0.05
0.04
68
MAX
25°C
0°C
V
= 1 V
I(PP)
I(PP)
70°C
25°C
0°C
SR
Slew rate at unity gain
R
= 1 MΩ,
C
= 20 pF
V/µs
L
L
V
= 5.5 V
70°C
25°C
25°C
0°C
V
B
Equivalent input noise voltage
f = 1 kHz,
R
C
= 20 Ω
nV/√Hz
n
S
L
1
Maximum output-swing bandwidth
Unity-gain bandwidth
Phase margin
V
O
= V
,
= 20 pF,
R = 1 MΩ
L
1.3
kHz
OM
OH
70°C
25°C
0°C
0.9
110
125
90
B
1
V = 10 mV,
I
C
= 20 pF
kHz
L
70°C
25°C
0°C
38°
40°
34°
φ
m
V = 10 mV,
I
f = B ,
C = 20 pF
L
1
70°C
10
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TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
electrical characteristics at specified free-air temperature, V
= 1.4 V
DD
TLC251C, TLC251AC,
TLC251BC
†
‡
TEST CONDITIONS
T
A
PARAMETER
BIAS
UNIT
MIN
TYP
MAX
10
12
5
25°C
Full range
25°C
TLC251C
Any
Any
Any
Input offset
voltage
V
IO
TLC251AC
TLC251BC
V
O
= 0.2 V,
R
= 50 Ω
mV
S
Full range
25°C
6.5
2
Full range
3
Average temperature
coefficient of input offset
voltage
α
25°C to 70°C
Any
1
1
µV/°C
VIO
25°C
Full range
25°C
60
300
60
I
I
Input offset current
Input bias current
V
V
= 0.2 V
= 0.2 V
Any
Any
pA
pA
IO
O
1
IB
O
Full range
600
0
to
0.2
Common-mode input
voltage range
V
V
25°C
Any
Any
V
ICR
Peak output voltage
V
V
= 100 mV
25°C
25°C
25°C
25°C
450
700
mV
OM
ID
§
swing
Low
20
10
Large-signal differential
voltage amplification
A
VD
= 100 to 300 mV,
R
= 50 Ω
O
S
High
Common-mode rejection
ratio
R
= 50 Ω,
V
O
= 0.2 V,
S
CMRR
Any
60
77
dB
V
IC
= V
min
ICR
Low
5
17
I
Supply current
V
O
= 0.2 V,
No load
µA
DD
High
150
190
†
Allcharacteristicsaremeasuredunderopen-loopconditionswithzerocommon-modeinputvoltageunlessotherwisespecified. Unlessotherwise
noted, an output load resistor is connected from the output to ground and has the following values: for low bias, R = 1 MΩ, for medium bias,
L
R
= 100 kΩ, and for high bias, R = 10 kΩ.
L
L
‡
§
Full range is 0°C to 70°C.
The output swings to the potential of V
/GND.
DD–
operating characteristics, V
= 1.4 V, T = 25°C
A
DD
TLC251C, TLC251AC,
TLC251BC
PARAMETER
TEST CONDITIONS
BIAS
UNIT
MIN
TYP
12
MAX
Low
High
Low
High
Low
High
B
Unity-gain bandwidth
C
= 100 pF
L
kHz
1
12
0.001
0.1
SR
Slew rate at unity gain
Overshoot factor
See Figure 1
See Figure 1
V/µs
35%
30%
11
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TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
electrical characteristics, V
= 5 V, T = 25°C
A
DD
TLC251Y
HIGH-BIAS
MODE
MEDIUM-BIAS
MODE
LOW-BIAS
MODE
PARAMETER
TEST CONDITIONS
UNIT
MIN TYP MAX
MIN
TYP MAX MIN
TYP MAX
V
V
R
= 1.4 V,
= 0 V,
= 50 Ω,
O
IC
S
V
Input offset voltage
1.1
10
1.1
1.7
10
1.1
1.1
10
mV
IO
†
R
L
Average temperature
coefficient of input
offset voltage
α
1.8
0.1
µV/°C
VIO
Input offset current
(see Note 4)
V
V
= V /2,
DD
O
IC
I
I
60
60
0.1
0.6
60
60
0.1
0.6
60
60
pA
pA
IO
= V /2
DD
Input bias current
(see Note 4)
V
V
= V /2,
DD
O
IC
0.6
IB
= V /2
DD
Common-mode input
voltage range
(see Note 5)
–0.2 –0.3
–0.2
to
–0.3
to
4.2
–0.2
to
–0.3
to
4.2
to
to
V
ICR
V
4
4.2
4
4
High-level output
voltage
V
R
= 100 mV,
ID
L
V
V
3.2
3.8
0
3.2
3.9
0
3.2
4.1
0
V
OH
†
Low-level output
voltage
V
= –100 mV,
= 0
ID
50
50
50
mV
OL
I
OL
Large-signal
differential voltage
amplification
V
R
= 0.25 V,
O
L
A
5
65
65
23
80
25
65
70
170
91
50
65
70
480
94
V/mV
dB
VD
†
Common-mode
rejection ratio
CMRR
V
= V
min
IC
ICR
Supply-voltage
rejection ratio
V
V
= 5 V to 10 V,
= 1.4 V
DD
O
k
95
93
97
dB
SVR
I(SEL)
DD
(∆V
DD
/∆V )
IO
Input current
I
I
V
= V /2
DD
–1.4
–0.13
105
0.065
10
µA
I(SEL)
(BIAS SELECT)
Supply current
V
V
= V /2,
DD
= V /2,
O
IC
675 1600
280
17
µA
DD
No load
†
For high-bias mode, R = 10 kΩ; for medium-bias mode, R = 100 kΩ; and for low-bias mode, R = 1 MΩ.
L
L
L
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
12
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TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
operating characteristics, V
= 5 V, T = 25°C
A
DD
TLC251Y
HIGH-BIAS
MODE
MEDIUM-BIAS
MODE
LOW-BIAS
MODE
PARAMETER
TEST CONDITIONS
UNIT
MIN TYP MAX
MIN
TYP MAX MIN
TYP MAX
†
V
V
= 1 V
3.6
2.9
0.43
0.40
0.03
0.03
Slew rate at
unity gain
I(PP)
R
C
,
L
L
SR
V/µs
= 20 pF
= 2.5 V
I(PP)
Equivalent input
noise voltage
V
B
B
f = 1 kHz,
R
C
= 20 Ω
25
320
32
55
68
4.5
65
nV/√Hz
kHz
n
S
L
Maximum output
swing bandwidth
V
R
= V
OH
= 10 kΩ
,
= 20 pF,
O
L
OM
1
Unity-gain
bandwidth
V = 10 mV,
I
C
= 20 pF
1700
46°
525
40°
kHz
L
f = B ,
V = 10 mV,
I
1
φ
m
Phase margin
34°
C
= 20 pF
L
†
For high-bias mode, R = 10 kΩ; for medium-bias mode, R = 100 kΩ; and for low-bias mode, R = 1 MΩ.
L
L
L
PARAMETER MEASUREMENT INFORMATION
IN–
–
–
Output
IN+
N2
Output
+
Input
BIAS
+
N1
R
L
C
= 100 pF
L
R
L
Low
Medium
High
1 MΩ
100 kΩ
10 kΩ
25 kΩ
GND
Figure 1. Unity-Gain Amplifier
Figure 2. Input Offset Voltage Null Circuit
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
vs Bias-select voltage
vs Supply voltage
vs Free-air temperature
3
4
5
I
Supply current
DD
Low bias
vs Frequency
6
7
8
6
7
8
A
VD
Large-signal differential voltage amplification Medium bias vs Frequency
High bias
Low bias
vs Frequency
vs Frequency
Phase shift
Medium bias vs Frequency
High bias vs Frequency
13
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TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS
SUPPLY CURRENT
vs
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
BIAS-SELECT VOLTAGE
10000
1000
100
10
10000
1000
100
V
= V = 0.2 V
IC DD
V
= V = 0.2 V
IC
O
O
DD
No Load
= 25°C
No Load
= 25°C
High-Bias Versions
T
T
A
A
Medium-Bias Versions
V
DD
= 16 V
V
DD
= 4 V
Low-Bias Versions
V
DD
= 1.4 V
10
1
0
0
2
4
6
8
10 12 14 16 18 20
0.1
1
10
100
V
B
– Bias-Select Voltage – V
V
DD
– Supply Voltage – V
Figure 3
Figure 4
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
10000
1000
100
V
V
V
= 10 V
= 0 V
= 2 V
DD
IC
O
High-Bias Versions
No Load
Medium-Bias Versions
Low-Bias Versions
10
0
0
10
20
30
40
50
60
70
80
T
A
– Free-Air Temperature – °C
Figure 5
14
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TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS
LOW-BIAS LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
AND PHASE SHIFT
vs
FREQUENCY
7
6
5
4
10
10
10
10
V
R
T
A
= 10 V
= 1 MΩ
= 25°C
DD
L
0°
30°
60°
A
(left scale)
VD
3
2
10
90°
Phase Shift
(right scale)
10
120°
1
10
150°
180°
1
0.1
0.1
1
10
100
1 k
10 k
100 k
Frequency – Hz
Figure 6
MEDIUM-BIAS LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
AND PHASE SHIFT
vs
FREQUENCY
7
10
6
10
5
10
4
10
V
R
T
A
= 10 V
= 100 kΩ
= 25°C
DD
L
0°
30°
60°
A
(left scale)
VD
3
2
10
90°
Phase Shift
(right scale)
10
120°
1
10
150°
180°
1
0.1
1
10
100
1 k
10 k
100 k
1 M
Frequency – Hz
Figure 7
15
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TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS
HIGH-BIAS LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
AND PHASE SHIFT
vs
FREQUENCY
7
10
6
10
5
10
4
10
V
R
T
A
= 10 V
= 10 kΩ
= 25°C
DD
L
0°
30°
60°
Phase Shift (right scale)
3
2
10
90°
10
120°
A
VD
(left scale)
1
10
150°
180°
1
0.1
10
100
1 k
10 k
100 k
1 M
10 M
Frequency – Hz
Figure 8
APPLICATION INFORMATION
latch-up avoidance
Junction-isolated CMOS circuits have an inherent parasitic PNPN structure that can function as an SCR. Under
certain conditions, this SCR may be triggered into a low-impedance state, resulting in excessive supply current.
To avoid such conditions, no voltage greater than 0.3 V beyond the supply rails should be applied to any pin.
In general, the operational amplifier supplies should be applied simultaneously with, or before, application of
any input signals.
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
APPLICATION INFORMATION
using BIAS SELECT
The TLC251 has a terminal called BIAS SELECT that allows the selection of one of three I
150, and 1000 µA typical). This allows the user to trade-off power and ac performance. As shown in the typical
conditions (10,
DD
supply current (I ) versus supply voltage (V ) curves (Figure 4), the I varies only slightly from 4 V to 16 V.
DD
DD
DD
DD
Below 4 V, the I
varies more significantly. Note that the I
values in the medium- and low-bias modes at
DD
V
= 1.4 V are typically 2 µA, and in the high mode are typically 12 µA. The following table shows the
DD
recommended BIAS SELECT connections at V
= 10 V.
DD
BIAS SELECT
CONNECTION
‡
BIAS MODE
AC PERFORMANCE
TYPICAL I
DD
†
Low
Medium
High
Low
Medium
High
V
10 µA
150 µA
1000 µA
DD
0.8 V to 9.2 V
Ground pin
†
‡
Bias selection may also be controlled by external circuitry to conserve power, etc.
For information regarding BIAS SELECT, see Figure 3 in the typical
characteristics curves.
For I
characteristics at voltages other than 10 V, see Figure 4 in the typical
DD
characteristics curves.
output stage considerations
The amplifier’s output stage consists of a source-follower-connected pullup transistor and an open-drain
pulldown transistor. The high-level output voltage (V ) is virtually independent of the I
selection and
OH
DD
increases with higher values of V and reduced output loading. The low-level output voltage (V ) decreases
DD
OL
with reduced output current and higher input common-mode voltage. With no load, V is essentially equal to
OL
the potential of V
/GND.
DD–
input offset nulling
The TLC251C series offers external offset null control. Nulling may be achieved by adjusting a 25-kΩ
potentiometer connected between the offset null terminals with the wiper connected to the device V /GND
DD–
pin as shown in Figure 2. The amount of nulling range varies with the bias selection. At an I setting of 1000 µA
DD
(high bias), the nulling range allows the maximum offset specified to be trimmed to zero. In low or medium bias
or when the amplifier is used below 4 V, total nulling may not be possible for all units.
supply configurations
Even though the TLC251C series is characterized for single-supply operation, it can be used effectively in a
split-supply configuration when the input common-mode voltage (V
supply voltage limits are not exceeded.
), output swing (V
and V ), and
ICR
OL OH
circuit layout precautions
The user is cautioned that whenever extremely high circuit impedances are used, care must be exercised in
layout, construction, board cleanliness, and supply filtering to avoid hum and noise pickup, as well as excessive
dc leakages.
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PACKAGE OPTION ADDENDUM
www.ti.com
30-Jul-2011
PACKAGING INFORMATION
Status (1)
Eco Plan (2)
MSL Peak Temp (3)
Samples
Orderable Device
Package Type Package
Drawing
Pins
Package Qty
Lead/
Ball Finish
(Requires Login)
TLC251ACD
ACTIVE
ACTIVE
SOIC
SOIC
D
D
8
8
75
75
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC251ACDG4
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
TLC251ACP
TLC251ACPE4
TLC251BCP
TLC251BCPE4
TLC251CD
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
PDIP
PDIP
PDIP
PDIP
SOIC
P
P
P
P
D
8
8
8
8
8
50
50
50
50
75
Pb-Free (RoHS)
Pb-Free (RoHS)
Pb-Free (RoHS)
Pb-Free (RoHS)
CU NIPDAU N / A for Pkg Type
CU NIPDAU N / A for Pkg Type
CU NIPDAU N / A for Pkg Type
CU NIPDAU N / A for Pkg Type
CU NIPDAU Level-1-260C-UNLIM
Green (RoHS
& no Sb/Br)
TLC251CDG4
TLC251CDR
ACTIVE
ACTIVE
ACTIVE
SOIC
SOIC
SOIC
D
D
D
8
8
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
2500
2500
Green (RoHS
& no Sb/Br)
TLC251CDRG4
Green (RoHS
& no Sb/Br)
TLC251CP
ACTIVE
ACTIVE
PDIP
PDIP
P
P
8
8
50
50
Pb-Free (RoHS)
Pb-Free (RoHS)
CU NIPDAU N / A for Pkg Type
CU NIPDAU N / A for Pkg Type
TLC251CPE4
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
30-Jul-2011
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TLC251CDR
TLC251CDR
SOIC
SOIC
D
D
8
8
2500
2500
330.0
330.0
12.4
12.4
6.4
6.4
5.2
5.2
2.1
2.1
8.0
8.0
12.0
12.0
Q1
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TLC251CDR
TLC251CDR
SOIC
SOIC
D
D
8
8
2500
2500
340.5
367.0
338.1
367.0
20.6
35.0
Pack Materials-Page 2
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