TLC271_V01 [TI]
LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS;型号: | TLC271_V01 |
厂家: | TEXAS INSTRUMENTS |
描述: | LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS 放大器 |
文件: | 总84页 (文件大小:2368K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
D, JG, OR P PACKAGE
(TOP VIEW)
Input Offset Voltage Drift . . . Typically
0.1 µV/Month, Including the First 30 Days
Wide Range of Supply Voltages Over
Specified Temperature Range:
0°C to 70°C . . . 3 V to 16 V
OFFSET N1
IN –
BIAS SELECT
1
2
3
4
8
7
6
5
V
DD
IN +
GND
OUT
OFFSET N2
–40°C to 85°C . . . 4 V to 16 V
–55°C to 125°C . . . 5 V to 16 V
Single-Supply Operation
FK PACKAGE
(TOP VIEW)
Common-Mode Input Voltage Range
Extends Below the Negative Rail (C-Suffix
and I-Suffix Types)
Low Noise . . . 25 nV/√Hz Typically at
f = 1 kHz (High-Bias Mode)
Output Voltage Range Includes Negative
Rail
3
2
1
20 19
18
NC
NC
IN –
NC
4
5
6
7
8
12
High Input Impedance . . . 10 Ω Typ
V
17
DD
ESD-Protection Circuitry
NC
16
15
14
Small-Outline Package Option Also
Available in Tape and Reel
OUT
NC
IN +
NC
9 10 11 12 13
Designed-In Latch-Up Immunity
description
The TLC271 operational amplifier combines a
wide range of input offset voltage grades with low
offset voltage drift and high input impedance. In
addition, the TLC271 offers a bias-select mode
NC – No internal connection
that allows the user to select the best combination of power dissipation and ac performance for a particular
application. These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset
voltage stability far exceeding the stability available with conventional metal-gate processes.
AVAILABLE OPTIONS
PACKAGE
V
max
IO
T
A
SMALL OUTLINE
(D)
CHIP CARRIER
(FK)
CERAMIC DIP
(JG)
PLASTIC DIP
(P)
AT 25°C
2 mV
5 mV
10 mV
TLC271BCD
TLC271ACD
TLC271CD
TLC271BCP
TLC271ACP
TLC271CP
0°C to 70°C
—
—
2 mV
5 mV
10 mV
TLC271BID
TLC271AID
TLC271ID
TLC271BIP
TLC271AIP
TLC271IP
–40°C to 85°C
–55°C to 125°C
—
—
10 mV
TLC271MD
TLC271MFK
TLC271MJG
TLC271MP
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC271BCDR).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinCMOS is a trademark of Texas Instruments.
Copyright 2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
DEVICE FEATURES
BIAS-SELECT MODE
†
UNIT
PARAMETER
HIGH
3375
3.6
MEDIUM
525
LOW
50
P
D
µW
V/µs
SR
0.4
0.03
68
V
n
25
32
nV/√Hz
MHz
B
1.7
0.5
0.09
480
1
A
VD
23
170
V/mV
†
Typical at V
= 5 V, T = 25°C
A
DD
description (continued)
Using the bias-select option, these cost-effective devices can be programmed to span a wide range of
applications that previously required BiFET, NFET, or bipolar technology. Three offset voltage grades are
available (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV)
low-offset version. The extremely high input impedance and low bias currents, in conjunction with good
common-mode rejection and supply voltage rejection, make these devices a good choice for new
state-of-the-art designs as well as for upgrading existing designs.
Ingeneral, manyfeaturesassociatedwithbipolartechnologyareavailableinLinCMOS operationalamplifiers,
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. The
devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and
inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density
system applications.
The device inputs and output are designed to withstand –100-mA surge currents without sustaining latch-up.
The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000
VastestedunderMIL-STD-883C, Method3015.2;however, careshouldbeexercisedinhandlingthesedevices
as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of – 55°C to 125°C.
bias-select feature
The TLC271 offers a bias-select feature that allows the user to select any one of three bias levels depending
on the level of performance desired. The tradeoffs between bias levels involve ac performance and power
dissipation (see Table 1).
Table 1. Effect of Bias Selection on Performance
MODE
TYPICAL PARAMETER VALUES
UNIT
HIGH BIAS
MEDIUM BIAS
LOW BIAS
°
DD
A
R
= 10 kΩ
R
= 100 kΩ
R
L
= 1 MΩ
0.05
0.03
68
L
L
P
Power dissipation
Slew rate
3.4
0.5
mW
V/µs
D
SR
3.6
0.4
V
Equivalent input noise voltage at f = 1 kHz
Unity-gain bandwidth
25
32
nV/√Hz
MHz
n
1
B
1.7
0.5
0.09
34°
φ
m
Phase margin
46°
40°
A
VD
Large-signal differential voltage amplification
23
170
480
V/mV
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
bias selection
Bias selection is achieved by connecting the bias select pin to one of three voltage levels (see Figure 1). For
medium-bias applications, it is recommended that the bias select pin be connected to the midpoint between the
supply rails. This procedure is simple in split-supply applications, since this point is ground. In single-supply
applications, the medium-bias mode necessitates using a voltage divider as indicated in Figure 1. The use of
large-value resistors in the voltage divider reduces the current drain of the divider from the supply line. However,
large-value resistors used in conjunction with a large-value capacitor require significant time to charge up to
the supply midpoint after the supply is switched on. A voltage other than the midpoint can be used if it is within
the voltages specified in Figure 1.
V
DD
BIAS-SELECT VOLTAGE
(single supply)
Low
Medium
1 MΩ
BIAS MODE
To the Bias
Select Pin
Low
Medium
High
V
DD
1 V to V
High
– 1 V
DD
GND
1 MΩ
0.01 µF
Figure 1. Bias Selection for Single-Supply Applications
high-bias mode
In the high-bias mode, the TLC271 series features low offset voltage drift, high input impedance, and low noise.
Speed in this mode approaches that of BiFET devices but at only a fraction of the power dissipation. Unity-gain
bandwidth is typically greater than 1 MHz.
medium-bias mode
The TLC271 in the medium-bias mode features low offset voltage drift, high input impedance, and low noise.
Speed in this mode is similar to general-purpose bipolar devices but power dissipation is only a fraction of that
consumed by bipolar devices.
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
low-bias mode
In the low-bias mode, the TLC271 features low offset voltage drift, high input impedance, extremely low power
consumption, and high differential voltage gain.
ORDER OF CONTENTS
TOPIC
BIAS MODE
schematic
all
all
all
absolute maximum ratings
recommended operating conditions
electrical characteristics
operating characteristics
typical characteristics
high
(Figures 2 – 33)
electrical characteristics
operating characteristics
typical characteristics
medium
(Figures 34 – 65)
electrical characteristics
operating characteristics
typical characteristics
low
(Figures 66 – 97)
parameter measurement information
application information
all
all
equivalent schematic
V
DD
P3
P12
P9A
R6
N5
P4
P5
P9B
P11
P1
P2 R2
IN –
R1
P10
N11
N12
IN +
P7A
P6A
P6B
P7B
P8
C1
R5
N3
N9
N6
R7
N7
N1
N2
N4
N13
D1
D2
R3
R4
N10
OFFSET OFFSET
N1
BIAS
SELECT
GND
OUT
N2
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Supply voltage, V
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V
DD
Differential input voltage, V (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±V
Input voltage range, V (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to V
ID
DD
DD
I
Input current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5 mA
I
Output current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30 mA
O
Duration of short-circuit current at (or below) 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature, T : C suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
A
I suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 85°C
M suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 125°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Case temperature for 60 seconds: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package . . . . . . . . . . . . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package . . . . . . . . . . . . . . . . . . . . 300°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at IN+ with respect to IN–.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
DISSIPATION RATING TABLE
T
≤ 25°C
DERATING FACTOR
T
= 70°C
T
= 85°C
T = 125°C
A
POWER RATING
A
A
A
PACKAGE
POWER RATING
ABOVE T = 25°C
POWER RATING
POWER RATING
A
D
FK
JG
P
725 mW
5.8 mW/°C
11.0 mW/°C
8.4 mW/°C
8.0 mW/°C
464 mW
377 mW
145 mW
1375 mW
880 mW
715 mW
275 mW
1050 mW
672 mW
546 mW
210 mW
1000 mW
640 mW
520 mW
200 mW
recommended operating conditions
C SUFFIX
I SUFFIX
M SUFFIX
UNIT
V
MIN
3
MAX
MIN
4
MAX
MIN
5
MAX
16
Supply voltage, V
16
3.5
8.5
70
16
3.5
8.5
85
DD
V
V
= 5 V
–0.2
–0.2
0
–0.2
–0.2
–40
0
3.5
DD
Common-mode input voltage, V
IC
V
= 10 V
0
8.5
DD
Operating free-air temperature, T
–55
125
°C
A
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271C, TLC271AC, TLC271BC
TEST
†
V
= 5 V
DD
TYP
V
DD
= 10 V
TYP
T
A
PARAMETER
UNIT
CONDITIONS
MIN
MAX
10
12
5
MIN
MAX
10
12
5
25°C
Full range
25°C
1.1
1.1
TLC271C
TLC271AC
TLC271BC
V
V
R
R
= 1.4 V,
= 0 V,
O
S
L
0.9
0.9
V
IO
Input offset voltage
mV
= 50 Ω,
= 10 kΩ
Full range
25°C
6.5
2
6.5
2
0.34
1.8
0.39
Full range
3
3
Average temperature coefficient
of input offset voltage
25°C to
70°C
α
2
µV/°C
VIO
25°C
70°C
25°C
70°C
0.1
7
60
300
60
0.1
7
60
300
60
V
V
= V
/2,
/2
O
IC
DD
= V
I
Input offset current (see Note 4)
Input bias current (see Note 4)
pA
IO
DD
0.6
40
0.7
50
V
V
= V
DD
= V
/2,
/2
O
IC
I
IB
pA
V
600
600
DD
–0.2
to
–0.3
to
–0.2
to
–0.3
to
25°C
4
4.2
9
9.2
Common-mode input voltage
range (see Note 5)
V
ICR
–0.2
to
–0.2
to
Full range
V
V
3.5
8.5
25°C
0°C
3.2
3
3.8
3.8
3.8
0
8
7.8
7.8
8.5
8.5
8.4
0
V
R
= 100 mV,
= 10 kΩ
ID
L
V
V
High-level output voltage
Low-level output voltage
OH
70°C
25°C
0°C
3
50
50
50
50
50
50
V
= –100 mV,
= 0
ID
0
0
mV
V/mV
dB
OL
I
OL
70°C
25°C
0°C
0
0
5
4
23
27
20
80
84
85
95
94
96
–1.4
10
7.5
7.5
65
60
60
65
60
60
36
42
32
85
88
88
95
94
96
–1.9
Large-signal differential
voltage amplification
R
= 10 kΩ,
L
A
VD
See Note 6
70°C
25°C
0°C
4
65
60
60
65
60
60
CMRR Common-mode rejection ratio
V
IC
= V
min
ICR
70°C
25°C
0°C
Supply-voltage rejection ratio
V
V
= 5 V to 10 V
= 1.4 V
DD
O
k
dB
µA
µA
SVR
I(SEL)
DD
(∆V
DD
/∆V
IO
)
70°C
25°C
I
I
Input current (BIAS SELECT)
Supply current
V
= 0
I(SEL)
25°C
0°C
675
775
575
1600
1800
1300
950
1125
750
2000
2200
1700
V
V
= V
/2,
/2,
DD
O
IC
DD
= V
No load
70°C
†
Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At V
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.
DD O
DD
O
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271I, TLC271AI, TLC271BI
TEST
†
V
= 5 V
DD
TYP
V
DD
= 10 V
TYP
T
A
PARAMETER
UNIT
CONDITIONS
MIN
MAX
10
13
5
MIN
MAX
10
13
5
25°C
Full range
25°C
1.1
1.1
TLC271I
TLC271AI
TLC271BI
V
V
R
R
= 1.4 V,
= 0 V,
O
S
L
0.9
0.9
V
IO
Input offset voltage
mV
= 50 Ω,
= 10 kΩ
Full range
25°C
7
7
0.34
1.8
2
0.39
2
Full range
3.5
3.5
Average temperature coefficient
of input offset voltage
25°C to
85°C
α
2
µV/°C
VIO
25°C
85°C
25°C
85°C
0.1
24
60
1000
60
0.1
26
60
1000
60
V
V
= V
/2,
/2
O
IC
DD
= V
I
Input offset current (see Note 4)
Input bias current (see Note 4)
pA
IO
DD
0.6
200
0.7
220
V
V
= V
DD
= V
/2,
/2
O
IC
I
IB
pA
V
2000
2000
DD
–0.2
to
–0.3
to
–0.2
to
–0.3
to
25°C
4
4.2
9
9.2
Common-mode input
voltage range (see Note 5)
V
ICR
–0.2
to
–0.2
to
Full range
V
V
3.5
8.5
25°C
–40°C
85°C
3.2
3
3.8
3.8
3.8
0
8
7.8
7.8
8.5
8.5
8.5
0
V
R
= 100 mV,
= 10 kΩ
ID
L
V
V
High-level output voltage
Low-level output voltage
OH
3
25°C
50
50
50
50
50
50
V
= –100 mV,
= 0
ID
–40°C
85°C
0
0
mV
V/mV
dB
OL
I
OL
0
0
25°C
5
3.5
3.5
65
60
60
65
60
60
23
32
19
80
81
86
95
92
96
–1.4
10
7
36
46
31
85
87
88
95
92
96
–1.9
Large-signal differential
voltage amplification
R
= 10 kΩ,
L
A
VD
–40°C
85°C
See Note 6
7
25°C
65
60
60
65
60
60
CMRR Common-mode rejection ratio
V
IC
= V
min
ICR
–40°C
85°C
25°C
Supply-voltage rejection ratio
V
V
= 5 V to 10 V
= 1.4 V
DD
O
k
–40°C
85°C
dB
µA
µA
SVR
I(SEL)
DD
(∆V
DD
/∆V
IO
)
I
I
Input current (BIAS SELECT)
Supply current
V
= 0
25°C
I(SEL)
25°C
–40°C
85°C
675
950
525
1600
2200
1200
950
1375
725
2000
2500
1600
V
V
= V
/2,
/2,
DD
O
IC
DD
= V
No load
†
Full range is –40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At V
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.
DD O
DD
O
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271M
TEST
CONDITIONS
†
V
= 5 V
DD
TYP
V
= 10 V
TYP
T
A
PARAMETER
UNIT
DD
MIN
MAX
MIN
MAX
V
V
R
R
= 1.4 V,
= 0 V,
= 50 Ω,
= 10 kΩ
O
S
L
25°C
1.1
10
1.1
10
V
IO
Input offset voltage
mV
Full range
12
12
Average temperature coefficient
of input offset voltage
25°C to
125°C
α
2.1
2.2
µV/°C
VIO
25°C
125°C
25°C
0.1
1.4
0.6
9
60
15
60
35
0.1
1.8
0.7
10
60
15
60
35
pA
nA
pA
nA
V
V
= V
/2,
/2
O
IC
DD
= V
I
Input offset current (see Note 4)
Input bias current (see Note 4)
IO
DD
V
V
= V
DD
= V
/2,
/2
O
IC
I
IB
125°C
DD
0
to
4
–0.3
to
4.2
0
to
9
–0.3
to
9.2
25°C
V
V
Common-mode input voltage
range (see Note 5)
V
ICR
0
to
0
to
Full range
3.5
8.5
25°C
–55°C
125°C
25°C
3.2
3
3.8
3.8
3.8
0
8
7.8
7.8
8.5
8.5
8.4
0
V
R
= 100 mV,
= 10 kΩ
ID
L
V
V
High-level output voltage
Low-level output voltage
V
mV
OH
3
50
50
50
50
50
50
V
= –100 mV,
= 0
ID
–55°C
125°C
25°C
0
0
OL
I
OL
0
0
5
3.5
3.5
65
60
60
65
60
60
23
35
16
80
81
84
95
90
97
–1.4
10
7
36
50
27
85
87
86
95
90
97
–1.9
Large-signal differential
voltage amplification
R
= 10 kΩ,
L
A
VD
–55°C
125°C
25°C
V/mV
dB
See Note 6
7
65
60
60
65
60
60
CMRR Common-mode rejection ratio
V
IC
= V
min
ICR
–55°C
125°C
25°C
Supply-voltage rejection ratio
V
V
= 5 V to 10 V
= 1.4 V
DD
O
k
–55°C
125°C
25°C
dB
µA
µA
SVR
I(SEL)
DD
(∆V
DD
/∆V
IO
)
I
I
Input current (BIAS SELECT)
Supply current
V
= 0
I(SEL)
25°C
–55°C
125°C
675
1000
475
1600
2500
1100
950
1475
625
2000
3000
1400
V
V
= V
/2,
/2,
DD
O
IC
DD
= V
No load
†
Full range is –55°C to 125°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At V
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.
DD O
DD
O
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
HIGH-BIAS MODE
operating characteristics at specified free-air temperature, V
= 5 V
DD
TLC271C, TLC271AC,
TLC271BC
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
3.6
4
MAX
25°C
0°C
V
= 1 V
I(PP)
I(PP)
R
C
= 10 kΩ,
= 20 pF,
L
L
70°C
25°C
0°C
3
SR
Slew rate at unity gain
V/µs
2.9
3.1
2.5
See Figure 98
V
= 2.5 V
70°C
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
25
nV/√Hz
25°C
0°C
320
340
260
1.7
2
V
R
= V
,
C
= 20 pF,
O
L
OH
= 10 kΩ,
L
B
Maximum output-swing bandwidth
kHz
OM
1
See Figure 98
70°C
25°C
0°C
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
B
Unity-gain bandwidth
Phase margin
MHz
70°C
25°C
0°C
1.3
46°
47°
44°
V = 10 mV,
f = B ,
1
I
φ
m
= 20 p,
L
70°C
operating characteristics at specified free-air temperature, V
= 10 V
DD
TLC271C, TLC271AC,
TLC271BC
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
5.3
5.9
4.3
4.6
5.1
3.8
MAX
25°C
0°C
V
= 1 V
I(PP)
I(PP)
R
C
= 10 kΩ,
= 20 pF,
L
L
70°C
25°C
0°C
SR
Slew rate at unity gain
V/µs
See Figure 98
V
= 5.5 V
70°C
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
25
nV/√Hz
25°C
0°C
200
220
140
2.2
2.5
1.8
49°
50°
46°
V
R
= V
,
C
= 20 pF,
O
L
OH
= 10 kΩ,
L
B
B
Maximum output-swing bandwidth
kHz
OM
See Figure 98
70°C
25°C
0°C
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
Unity-gain bandwidth
Phase margin
MHz
1
70°C
25°C
0°C
f = B ,
C
V = 10 mV,
I
See Figure 100
1
φ
m
= 20 pF,
L
70°C
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
HIGH-BIAS MODE
operating characteristics at specified free-air temperature, V
= 5 V
DD
TLC271I, TLC271AI,
TLC271BI
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
3.6
4.5
2.8
2.9
3.5
2.3
MAX
25°C
–40°C
85°C
V
= 1 V
I(PP)
I(PP)
R
C
= 10 kΩ,
= 20 pF,
L
L
SR
Slew rate at unity gain
V/µs
25°C
See Figure 98
V
= 2.5 V
–40°C
85°C
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
25
nV/√Hz
25°C
–40°C
85°C
320
380
250
1.7
2.6
1.2
46°
49°
43°
V
R
= V
,
C
= 20 pF,
O
L
OH
= 10 kΩ,
L
B
Maximum output-swing bandwidth
kHz
OM
1
See Figure 98
25°C
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
B
Unity-gain bandwidth
Phase margin
–40°C
85°C
MHz
25°C
V = 10 mV,
f = B ,
1
See Figure 100
I
φ
m
–40°C
85°C
C
= 20 pF,
L
operating characteristics at specified free-air temperature, V
= 10 V
DD
TLC271I, TLC271AI,
TLC271BI
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
5.3
6.8
4
MAX
25°C
–40°C
85°C
V
= 1 V
I(PP)
I(PP)
R
C
= 10 kΩ,
= 20 pF,
L
L
SR
Slew rate at unity gain
V/µs
25°C
4.6
5.8
3.5
See Figure 98
V
= 5.5 V
–40°C
85°C
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
25
nV/√Hz
25°C
–40°C
85°C
200
260
130
2.2
3.1
1.7
49°
52°
46°
V
R
= V
,
C
= 20 pF,
O
L
OH
= 10 kΩ,
L
B
B
Maximum output-swing bandwidth
kHz
OM
See Figure 98
25°C
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
Unity-gain bandwidth
Phase margin
–40°C
85°C
MHz
1
25°C
V = 10 mV,
f= B ,
1
See Figure 100
I
φ
m
–40°C
85°C
C
= 20 pF,
L
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
HIGH-BIAS MODE
operating characteristics at specified free-air temperature, V
= 5 V
DD
TLC271M
TYP
3.6
PARAMETER
TEST CONDITIONS
T
UNIT
A
MIN
MAX
25°C
–55°C
125°C
25°C
V
= 1 V
4.7
I(PP)
I(PP)
R
C
= 10 kΩ,
= 20 pF,
See Figure 98
L
L
2.3
SR
Slew rate at unity gain
V/µs
2.9
V
= 2.5 V
–55°C
125°C
3.7
2
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
25
nV/√Hz
25°C
–55°C
125°C
25°C
320
400
230
1.7
2.9
1.1
46°
49°
41°
V
R
= V
,
C
= 20 pF,
O
L
OH
= 10 kΩ,
L
B
B
Maximum output-swing bandwidth
kHz
OM
See Figure 98
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
Unity-gain bandwidth
Phase margin
–55°C
125°C
25°C
MHz
1
V = 10 mV,
f = B ,
1
See Figure 100
I
φ
m
–55°C
125°C
C
= 20 pF,
L
operating characteristics at specified free-air temperature, V
= 10 V
DD
TLC271M
TYP
5.3
PARAMETER
TEST CONDITIONS
T
UNIT
A
MIN
MAX
25°C
–55°C
125°C
25°C
V
= 1 V
7.1
I(PP)
I(PP)
R
C
= 10 kΩ,
= 20 pF,
See Figure 98
L
L
3.1
SR
Slew rate at unity gain
V/µs
4.6
V
= 5.5 V
–55°C
125°C
6.1
2.7
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
25
nV/√Hz
25°C
–55°C
125°C
25°C
200
280
110
2.2
3.4
1.6
49°
52°
44°
V
R
= V
,
C
= 20 pF,
O
L
OH
= 10 kΩ,
L
B
Maximum output-swing bandwidth
kHz
OM
1
See Figure 98
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
B
Unity-gain bandwidth
Phase margin
–55°C
125°C
25°C
MHz
f = B ,
V = 10 mV,
I
1
φ
m
–55°C
125°C
= 20 p,
L
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
Table of Graphs
FIGURE
2, 3
V
Input offset voltage
Distribution
Distribution
IO
α
Temperature coefficient
4, 5
VIO
vs High-level output current
vs Supply voltage
6, 7
8
V
V
A
High-level output voltage
OH
OL
vs Free-air temperature
9
vs Common-mode input voltage
vs Differential input voltage
vs Free-air temperature
10, 11
12
13
Low-level output voltage
vs Low-level output current
14, 15
vs Supply voltage
vs Free-air temperature
vs Frequency
16
17
28, 29
Large-signal differential voltage amplification
VD
I
I
Input bias current
vs Free-air temperature
vs Free-air temperature
vs Supply voltage
18
18
19
IB
Input offset current
IO
V
Common-mode input voltage
IC
vs Supply voltage
vs Free-air temperature
20
21
I
Supply current
Slew rate
DD
vs Supply voltage
vs Free-air temperature
22
23
SR
Bias-select current
vs Supply voltage
vs Frequency
24
25
V
B
Maximum peak-to-peak output voltage
O(PP)
vs Free-air temperature
vs Supply voltage
26
27
Unity-gain bandwidth
1
A
VD
Large-signal differential voltage amplification vs Frequency
28, 29
vs Supply voltage
vs Free-air temperature
vs Capacitive load
30
31
32
φ
m
Phase margin
V
n
Equivalent input noise voltage
Phase shift
vs Frequency
vs Frequency
33
28, 29
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
60
50
40
30
20
10
0
60
50
40
30
20
10
0
753 Amplifiers Tested From 6 Wafer Lots
753 Amplifiers Tested From 6 Wafer Lots
V
= 10 V
DD
= 25°C
V
T
= 5 V
DD
= 25°C
T
A
A
P Package
P Package
– 5 – 4 – 3 – 2 – 1
0
1
2
3
4
5
– 5 – 4 – 3 – 2 – 1
0
1
2
3
4
5
V
IO
– Input Offset Voltage – mV
V
IO
– Input Offset Voltage – mV
Figure 2
Figure 3
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
TEMPERATURE COEFFICIENT
60
50
40
30
20
10
0
60
50
40
30
20
10
0
324 Amplifiers Tested From 8 Wafer Lots
324 Amplifiers Tested From 8 Wafer lots
V
T
A
= 5 V
V
= 10 V
DD
= 25°C to 125°C
DD
= 25°C to 125°C
T
A
P Package
Outliers:
(1) 20.5 µV/°C
P Package
Outliers:
(1) 21.2 µV/°C
– 10 – 8 – 6 – 4 – 2
0
2
4
6
8
10
– 10 – 8 – 6 – 4 – 2
0
2
4
6
8
10
α
– Temperature Coefficient – µV/°C
α
– Temperature Coefficient – µV/°C
VIO
VIO
Figure 4
Figure 5
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
5
4
3
2
1
0
16
14
12
10
8
V
T
= 100 mV
V
T
= 100 mV
ID
= 25°C
ID
= 25°C
A
A
V
= 16 V
DD
V
= 5 V
DD
V
= 4 V
DD
V
= 10 V
DD
V
DD
= 3 V
6
4
2
0
0
– 2
– 4
– 6
– 8
– 10
0
– 5 – 10 – 15 – 20 – 25 – 30 – 35 – 40
I
– High-Level Output Current – mA
OH
I
– High-Level Output Current – mA
OH
Figure 6
Figure 7
HIGH-LEVEL OUTPUT VOLTAGE
HIGH-LEVEL OUTPUT VOLTAGE
vs
vs
SUPPLY VOLTAGE
FREE-AIR TEMPERATURE
16
14
12
10
8
V
DD
– 1.6
– 1.7
– 1.8
– 1.9
– 2
V
= 100 mV
= 10 kΩ
= 25°C
ID
L
I
V
= –5 mA
= 100 mA
OH
ID
R
T
V
DD
= 5 V
A
V
DD
= 10 V
6
– 2.1
– 2.2
– 2.3
– 2.4
4
2
0
0
2
4
6
8
10
12
14
16
– 75 – 50 – 25
0
20
50
75
100 125
V
DD
– Supply Voltage – V
T
A
– Free-Air Temperature – °C
Figure 8
Figure 9
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
COMMON-MODE INPUT VOLTAGE
700
650
600
550
500
450
400
350
300
500
450
400
350
300
250
V
= 5 V
= 5 mA
= 25°C
DD
V
I
T
A
= 10 V
= 5 mA
= 25°C
DD
OL
I
OL
T
A
V
= –100 mV
ID
V
V
V
= –100 mV
= –1 V
ID
ID
ID
= –2.5 V
V
ID
= –1 V
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
V
IC
– Common-Mode Input Voltage – V
V
IC
– Common-Mode Input Voltage – V
Figure 10
Figure 11
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
FREE-AIR TEMPERATURE
800
700
600
500
400
300
200
100
0
900
800
700
600
500
400
300
200
100
0
I
V
= 5 mA
I
V
= 5 mA
= –1 V
OL
IC
OL
ID
IC
= V /2
ID
T
= 25°C
V
= 0.5 V
A
V
DD
= 5 V
V
= 5 V
DD
V
= 10 V
DD
V
= 10 V
DD
0
– 1 – 2 – 3 – 4 – 5 – 6 – 7 – 8 – 9 – 10
– 75 – 50 – 25
0
25
50
75
100 125
V
ID
– Differential Input Voltage – V
T
A
– Free-Air Temperature – °C
Figure 12
Figure 13
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
3
2.5
2
1
V
V
T
= –1 V
V
V
T
= –1 V
= 0.5 V
= 25°C
ID
ID
IC
A
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
= 0.5 V
= 25°C
IC
A
V
= 16 V
DD
V
= 5 V
DD
V
= 4 V
DD
V
= 10 V
DD
V
= 3 V
DD
1.5
1
0.5
0
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
I
– Low-Level Output Current – mA
I
– Low-Level Output Current – mA
OL
OL
Figure 14
Figure 15
LARGE-SIGNAL
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
vs
FREE-AIR TEMPERATURE
SUPPLY VOLTAGE
60
50
40
30
20
10
0
50
45
40
35
30
25
20
15
10
5
T
= – 55°C
0°C
A
R
= 10 kΩ
R
= 10 kΩ
L
L
V
= 10 V
DD
25°C
85°C
125°C
V
= 5 V
DD
0
0
2
4
6
8
10
12
14
16
– 75 – 50 – 25
0
25
50
75
100 125
V
DD
– Supply Voltage – V
T
A
– Free-Air Temperature – °C
Figure 16
Figure 17
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
INPUT BIAS CURRENT AND INPUT OFFSET
COMMON-MODE INPUT VOLTAGE
(POSITIVE LIMIT)
vs
CURRENT
vs
FREE-AIR TEMPERATURE
SUPPLY VOLTAGE
10000
1000
100
10
16
14
12
10
8
V
V
= 10 V
DD
= 5 V
T
A
= 25°C
IC
See Note A
I
IB
I
IO
6
4
1
2
0.1
0
25
45
A
65
85
105
125
0
2
4
V
6
8
10
12
14
16
T
– Free-Air Temperature – °C
– Supply Voltage – V
DD
NOTE A: The typical values of input bias current and input offset
current below 5 pA were determined mathematically.
Figure 18
Figure 19
SUPPLY CURRENT
vs
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
SUPPLY VOLTAGE
2
1.5
1
2.5
V
= V
/2
V
= V
DD
/2
O
DD
O
No Load
No Load
T
A
=–55°C
2
1.5
1
0°C
V
DD
= 10 V
25°C
70°C
V
DD
= 5 V
125°C
0.5
0.5
0
0
– 75 – 50 – 25
0
25
50
75
100 125
0
2
4
6
8
10
12
14
16
T
A
– Free-Air Temperature – °C
V
DD
– Supply Voltage – V
Figure 20
Figure 21
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
SLEW RATE
vs
FREE-AIR TEMPERATURE
SLEW RATE
vs
SUPPLY VOLTAGE
8
7
6
5
4
3
2
1
0
8
A
= 1
A
R
C
= 1
= 10 kΩ
= 20 pF
V
V
L
L
V
I(PP)
= 1 V
= 10 kΩ
= 20 pF
= 25°C
7
6
5
4
3
2
1
0
V
V
= 10 V
= 5.5 V
R
C
T
DD
I(PP)
L
L
See Figure 99
A
See Figure 98
V
V
= 10 V
DD
= 1 V
I(PP)
V
V
= 5 V
= 1 V
DD
I(PP)
V
= 5 V
DD
V
= 2.5 V
I(PP)
0
2
4
V
6
8
10
12
14
16
–75 –50 –25
0
25
50 75
– Free-Air Temperature – °C
100 125
– Supply Voltage – V
DD
T
A
Figure 22
Figure 23
MAXIMUM PEAK-TO-PEAK OUTPUT
BIAS-SELECT CURRENT
vs
VOLTAGE
vs
SUPPLY VOLTAGE
FREQUENCY
10
9
8
7
6
5
4
3
2
1
0
– 3
– 2.7
– 2.4
– 2.1
– 1.8
– 1.5
– 1.2
– 0.9
– 0.6
T
= 25°C
A
V
DD
= 10 V
V
= 0
I(SEL)
T
= 125°C
= 25°C
= 55°C
A
T
A
T
A
V
DD
= 5 V
R
= 10 kΩ
L
See Figure 98
– 0.3
0
10
100
1000
10000
0
2
4
6
8
10
12
14
16
f – Frequency – kHz
V
DD
– Supply Voltage – V
Figure 24
Figure 25
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
18
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
UNITY-GAIN BANDWIDTH
vs
UNITY-GAIN BANDWIDTH
vs
FREE-AIR TEMPERATURE
SUPPLY VOLTAGE
3
2.5
2
2.5
V
= 5 V
DD
V = 10 mV
V = 10 mV
I
I
C
C
T
A
= 20 pF
= 25°C
L
= 20 pF
L
See Figure 100
See Figure 100
2
1.5
1.5
1
1
– 75 – 50 – 25
0
25
50
75
100 125
0
2
4
6
8
10
12
14
16
T
A
– Free-Air Temperature – °C
V
DD
– Supply Voltage – V
Figure 26
Figure 27
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
7
6
5
4
3
2
1
10
10
10
10
10
10
10
V
= 5 V
= 10 kΩ
= 25°C
DD
R
L
T
A
0°
30°
A
VD
60°
90°
Phase Shift
120°
150°
180°
1
0.1
10
100
1 k
10 k
100 k
1 M
10 M
f – Frequency – Hz
Figure 28
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
19
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
LARGE-SCALE DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
7
6
5
4
3
2
1
10
10
10
10
10
10
10
V
R
= 10 V
= 10 kΩ
= 25°C
DD
L
T
A
0°
30°
A
VD
60°
90°
Phase Shift
120°
150°
180°
1
0.1
10
100
1 k
10 k
100 k
1 M
10 M
f – Frequency – Hz
Figure 29
PHASE MARGIN
vs
PHASE MARGIN
vs
SUPPLY VOLTAGE
FREE-AIR TEMPERATURE
53°
50°
V
= 5 V
DD
V = 10 mV
52°
51°
I
C
= 20 pF
48°
46°
44°
42°
40°
L
See Figure 100
50°
49°
48°
47°
46°
45°
V = 10 mV
I
C
= 20 pF
L
T
A
= 25°C
See Figure 100
0
2
4
6
8
10
12
14
16
– 75 – 50 – 25
0
25
50
75
100 125
V
DD
– Supply Voltage – V
T
A
– Free-Air Temperature – °C
Figure 30
Figure 31
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
20
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
PHASE MARGIN
vs
EQUIVALENT NOISE VOLTAGE
vs
CAPACITIVE LOAD
FREQUENCY
50°
45°
40°
35°
30°
25°
400
V
= 5 mV
DD
V = 10 mV
V
= 5 V
= 20 Ω
= 25°C
DD
350
300
I
A
R
T
A
S
T
= 25°C
See Figure 100
See Figure 99
250
200
150
100
50
0
0
20
40
60
80
100
1
10
100
1000
C
– Capacitive Load – pF
f – Frequency – Hz
L
Figure 32
Figure 33
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
21
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MEDIUM-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271C, TLC271AC, TLC271BC
†
V
= 5 V
V
= 10 V
TYP
T
A
PARAMETER
TEST CONDITIONS
UNIT
DD
TYP
DD
MIN
MAX
10
12
5
MIN
MAX
10
12
5
25°C
Full range
25°C
1.1
1.1
TLC271C
V
V
R
= 1.4 V,
= 0
= 50 Ω,
O
IC
S
0.9
0.9
V
IO
Input offset voltage TLC271AC
TLC271BC
mV
Full range
25°C
6.5
2
6.5
2
R = 100 kΩ
I
0.25
1.7
0.26
Full range
3
3
Average temperature coefficient
of input offset voltage
25°C to
70°C
α
2.1
µV/°C
VIO
25°C
70°C
25°C
70°C
0.1
7
60
300
60
0.1
7
60
300
60
V
V
= V
/2,
/2
O
IC
DD
= V
I
Input offset current (see Note 4)
Input bias current (see Note 4)
pA
IO
DD
0.6
40
0.7
50
V
V
= V
DD
= V
/2,
/2
O
IC
I
IB
pA
V
600
600
DD
–0.2
to
–0.3
to
–0.2
to
–0.3
to
25°C
4
4.2
9
9.2
Common-mode input
voltage range (see Note 5)
V
ICR
–0.2
to
–0.2
to
Full range
V
V
3.5
8.5
25°C
0°C
3.2
3
3.9
3.9
4
8
7.8
7.8
8.7
8.7
8.7
0
V
R
= 100 mV,
= 100 kΩ
ID
L
V
V
High-level output voltage
Low-level output voltage
OH
70°C
25°C
0°C
3
0
50
50
50
50
50
50
V
= –100 mV,
= 0
ID
0
0
mV
V/mV
dB
OL
I
OL
70°C
25°C
0°C
0
0
25
15
15
65
60
60
70
60
60
170
200
140
91
25
15
15
65
60
60
70
60
60
275
320
230
94
94
94
93
92
94
Large-signal differential
voltage amplification
R
= 100 kΩ,
L
A
VD
See Note 6
70°C
25°C
0°C
CMRR Common-mode rejection ratio
V
IC
= V
min
ICR
91
70°C
25°C
0°C
92
93
Supply-voltage rejection ratio
V
V
= 5 V to 10 V
= 1.4 V
DD
O
k
92
dB
nA
µA
SVR
I(SEL)
DD
(∆V
DD
/∆V )
IO
70°C
25°C
25°C
0°C
94
I
I
Input current (BIAS SELECT)
Supply current
V
= V
/2
–130
105
125
85
–160
143
173
110
I(SEL)
DD
280
320
220
300
400
280
V
V
= V
/2,
/2,
DD
O
IC
DD
= V
No load
70°C
†
Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At V
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.
DD
O
DD O
22
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MEDIUM-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271I, TLC271AI, TLC271BI
TEST
†
V
= 5 V
DD
TYP
V
DD
= 10 V
TYP
T
A
PARAMETER
UNIT
CONDITIONS
MIN
MAX
10
13
5
MIN
MAX
10
13
5
25°C
Full range
25°C
1.1
1.1
TLC271I
TLC271AI
TLC271BI
V
V
R
= 1.4 V,
= 0 V,
O
IC
S
L
0.9
0.9
V
IO
Input offset voltage
mV
= 50 Ω,
= 100 kΩ
Full range
25°C
7
7
R
0.25
1.7
2
0.26
2
Full range
3.5
3.5
Average temperature coefficient
of input offset voltage
25°C to
85°C
α
2.1
µV/°C
VIO
25°C
85°C
25°C
85°C
0.1
24
60
1000
60
0.1
26
60
1000
60
V
V
= V
/2,
/2
O
IC
DD
= V
I
Input offset current (see Note 4)
Input bias current (see Note 4)
pA
IO
DD
0.6
200
0.7
220
V
V
= V
DD
= V
/2,
/2
O
IC
I
IB
pA
V
2000
2000
DD
–0.2
to
–0.3
to
–0.2
to
–0.3
to
25°C
4
4.2
9
9.2
Common-mode input
voltage range (see Note 5)
V
ICR
–0.2
to
–0.2
to
Full range
V
V
3.5
8.5
25°C
–40°C
85°C
3.2
3
3.9
3.9
4
8
7.8
7.8
8.7
8.7
8.7
0
V
R
= 100 mV,
= 100 kΩ
ID
L
V
V
High-level output voltage
Low-level output voltage
OH
3
25°C
0
50
50
50
50
50
50
V
= –100 mV,
= 0
ID
–40°C
85°C
0
0
mV
V/mV
dB
OL
I
OL
0
0
25°C
25
15
15
65
60
60
70
60
60
170
270
130
91
25
15
15
65
60
60
70
60
60
275
390
220
94
Large-signal differential
voltage amplification
R
= 100 kΩ,
L
A
VD
–40°C
85°C
See Note 6
25°C
CMRR Common-mode rejection ratio
V
IC
= V
min
ICR
–40°C
85°C
90
93
90
94
25°C
93
93
Supply-voltage rejection ratio
V
V
= 5 V to 10 V
= 1.4 V
DD
O
k
–40°C
85°C
91
91
dB
nA
µA
SVR
I(SEL)
DD
(∆V
DD
/∆V )
IO
94
94
I
I
Input current (BIAS SELECT)
Supply current
V
= V
/2
25°C
–130
105
158
80
–160
143
225
103
I(SEL)
DD
25°C
280
400
200
300
450
260
V
V
= V
/2,
/2,
DD
O
IC
DD
= V
–40°C
85°C
No load
†
Full range is –40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At V
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.
DD
O
DD O
23
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MEDIUM-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271M
TEST
CONDITIONS
†
V
= 5 V
DD
TYP
V
= 10 V
TYP
T
A
PARAMETER
UNIT
DD
MIN
MAX
MIN
MAX
V
V
= 1.4 V,
= 0 V,
O
IC
25°C
1.1
10
1.1
10
mV
V
IO
Input offset voltage
R
R
= 50 Ω,
= 100 kΩ
S
L
Full range
12
12
Average temperature coefficient
of input offset voltage
25°C to
125°C
α
1.7
2.1
µV/°C
VIO
25°C
125°C
25°C
0.1
1.4
0.6
9
60
15
60
35
0.1
1.8
0.7
10
60
15
60
35
pA
nA
pA
nA
V
V
= V
/2,
/2
O
IC
DD
= V
I
Input offset current (see Note 4)
Input bias current (see Note 4)
IO
DD
V
V
= V
DD
= V
/2,
/2
O
IC
I
IB
125°C
DD
0
to
4
–0.3
to
4.2
0
to
9
–0.3
to
9.2
25°C
V
V
Common-mode input
voltage range (see Note 5)
V
ICR
0
to
0
to
Full range
3.5
8.5
25°C
–55°C
125°C
25°C
3.2
3
3.9
3.9
4
8
7.8
7.8
8.7
8.6
8.6
0
V
R
= 100 mV,
= 100 kΩ
ID
L
V
V
High-level output voltage
Low-level output voltage
V
mV
OH
3
0
50
50
50
50
50
50
V
= –100 mV,
= 0
ID
–55°C
125°C
25°C
0
0
OL
I
OL
0
0
25
15
15
65
60
60
70
60
60
170
290
120
91
25
15
15
65
60
60
70
60
60
275
420
190
94
Large-signal differential
voltage amplification
R
= 10 kΩ
L
A
VD
–55°C
125°C
25°C
V/mV
dB
See Note 6
CMRR Common-mode rejection ratio
V
IC
= V
min
ICR
–55°C
125°C
25°C
89
93
91
93
93
93
Supply-voltage rejection ratio
V
V
= 5 V to 10 V
= 1.4 V
DD
O
k
–55°C
125°C
25°C
91
91
dB
nA
µA
SVR
I(SEL)
DD
(∆V
DD
/∆V )
IO
94
94
I
I
Input current (BIAS SELECT)
Supply current
V
= V
/2
–130
105
170
70
–160
143
245
90
I(SEL)
DD
25°C
280
440
180
300
500
240
V
V
= V
/2,
/2,
DD
O
IC
DD
= V
–55°C
125°C
No load
†
Full range is –55°C to 125°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At V
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.
DD
O
DD O
24
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MEDIUM-BIAS MODE
operating characteristics at specified free-air temperature, V
= 5 V
DD
TLC271C, TLC271AC,
TLC271BC
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
0.43
0.46
0.36
0.40
0.43
0.34
MAX
25°C
0°C
V
= 1 V
I(PP)
I(PP)
R
C
= 100 kΩ,
= 20 pF,
L
L
70°C
25°C
0°C
SR
Slew rate at unity gain
V/µs
See Figure 98
V
= 2.5 V
70°C
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
32
nV/√Hz
25°C
0°C
55
60
V
R
= V
,
C
= 20 pF,
O
L
OH
= 100 kΩ,
L
B
Maximum output-swing bandwidth
kHz
OM
1
See Figure 98
70°C
25°C
0°C
50
525
600
400
40°
41°
39°
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
B
Unity-gain bandwidth
Phase margin
kHz
70°C
25°C
0°C
V = 10 mV,
f = B ,
1
See Figure 100
I
φ
m
C
= 20 pF,
L
70°C
operating characteristics at specified free-air temperature, V
= 10 V
DD
TLC271C, TLC271AC,
TLC271BC
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
0.62
0.67
0.51
0.56
0.61
0.46
MAX
25°C
0°C
V
= 1 V
I(PP)
I(PP)
R
C
= 100 kΩ,
= 20 pF,
L
L
70°C
25°C
0°C
SR
Slew rate at unity gain
V/µs
See Figure 98
V
= 5.5 V
70°C
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
32
nV/√Hz
25°C
0°C
35
40
V
R
= V
,
C
= 20 pF,
O
L
OH
= 100 kΩ,
L
B
B
Maximum output-swing bandwidth
kHz
OM
See Figure 98
70°C
25°C
0°C
30
635
710
510
43°
44°
42°
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
Unity-gain bandwidth
Phase margin
kHz
1
70°C
25°C
0°C
V = 10 mV,
f = B ,
1
See Figure 100
I
φ
m
C
= 20 pF,
L
70°C
25
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MEDIUM-BIAS MODE
operating characteristics at specified free-air temperature, V
= 5 V
DD
TLC271I, TLC271AI,
TLC271BI
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
0.43
0.51
0.35
0.40
0.48
0.32
MAX
25°C
–40°C
85°C
V
= 1 V
I(PP)
I(PP)
R
C
= 100 kΩ,
= 20 pF,
L
L
SR
Slew rate at unity gain
V/µs
25°C
See Figure 98
V
= 2.5 V
–40°C
85°C
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
32
nV/√Hz
25°C
–40°C
85°C
55
75
V
R
= V
,
C
= 20 pF,
O
L
OH
= 100 kΩ,
L
B
Maximum output-swing bandwidth
kHz
OM
1
See Figure 98
45
25°C
525
770
370
40°
43°
38°
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
B
Unity-gain bandwidth
Phase margin
–40°C
85°C
MHz
25°C
V = 10 mV,
f = B ,
1
See Figure 100
I
φ
m
–40°C
85°C
C
= 20 pF,
L
operating characteristics at specified free-air temperature, V
= 10 V
DD
TLC271I, TLC271AI,
TLC271BI
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
0.62
0.77
0.47
0.56
0.70
0.44
MAX
25°C
–40°C
85°C
V
= 1 V
I(PP)
I(PP)
R
C
= 100 kΩ,
= 20 pF,
L
L
SR
Slew rate at unity gain
V/µs
25°C
See Figure 98
V
= 5.5 V
–40°C
85°C
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
32
nV/√Hz
25°C
–40°C
85°C
35
45
V
R
= V
,3
C
= 20 pF,
O
L
OH
= 100 kΩ,
L
B
B
Maximum output-swing bandwidth
kHz
OM
See Figure 98
25
25°C
635
880
480
43°
46°
41°
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
Unity-gain bandwidth
Phase margin
–40°C
85°C
kHz
1
25°C
V = 10 mV,
f = B ,
1
See Figure 100
I
φ
m
–40°C
85°C
C
= 20 pF,
L
26
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
MEDIUM-BIAS MODE
operating characteristics at specified free-air temperature, V
= 5 V
DD
TLC271M
TYP
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
MAX
25°C
–55°C
125°C
25°C
0.43
V
= 1 V
0.54
I(PP)
I(PP)
R
C
= 100 kΩ,
= 20 pF,
L
L
0.29
SR
Slew rate at unity gain
V/µs
0.40
See Figure 98
V
= 2.5 V
–55°C
125°C
0.50
0.28
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
32
nV/√Hz
25°C
–55°C
125°C
25°C
55
80
V
R
= V
,
C
= 20 pF,
O
L
OH
= 100 kΩ,
L
B
B
Maximum output-swing bandwidth
kHz
OM
See Figure 98
40
525
850
330
40°
43°
36°
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
Unity-gain bandwidth
Phase margin
–55°C
125°C
25°C
kHz
1
V = 10 mV,
f = B ,
1
See Figure 100
I
φ
m
–55°C
125°C
C
= 20 pF,
L
operating characteristics at specified free-air temperature, V
= 10 V
DD
TLC271M
TYP
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
MAX
25°C
–55°C
125°C
25°C
0.62
V
= 1 V
0.81
I(PP)
I(PP)
R
C
= 100 kΩ,
= 20 pF,
L
L
0.38
SR
Slew rate at unity gain
V/µs
0.56
See Figure 98
V
= 5.5 V
–55°C
125°C
0.73
0.35
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
32
nV/√Hz
25°C
–55°C
125°C
25°C
35
50
V
R
= V
,
C
= 20 pF,
O
L
OH
= 100 kΩ,
L
B
Maximum output-swing bandwidth
kHz
OM
1
See Figure 98
20
635
960
440
43°
47°
39°
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
B
Unity-gain bandwidth
Phase margin
–55°C
125°C
25°C
kHz
V = 10 mV,
f = B ,
1
See Figure 100
I
φ
m
–55°C
125°C
C
= 20 pF,
L
27
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)
Table of Graphs
FIGURE
34, 35
V
Input offset voltage
Distribution
Distribution
IO
α
Temperature coefficient
36, 37
VIO
vs High-level output current
vs Supply voltage
38, 39
40
V
V
A
High-level output voltage
OH
OL
vs Free-air temperature
41
vs Common-mode input voltage
vs Differential input voltage
vs Free-air temperature
42, 43
44
45
Low-level output voltage
vs Low-level output current
46, 47
vs Supply voltage
vs Free-air temperature
vs Frequency
48
49
60, 61
Large-signal differential voltage amplification
VD
I
I
Input bias current
vs Free-air temperature
vs Free-air temperature
vs Supply voltage
50
50
51
IB
Input offset current
Maximum Input voltage
IO
V
I
vs Supply voltage
vs Free-air temperature
52
53
I
Supply current
Slew rate
DD
vs Supply voltage
vs Free-air temperature
54
55
SR
Bias-select current
vs Supply voltage
vs Frequency
56
57
V
B
Maximum peak-to-peak output voltage
O(PP)
vs Free-air temperature
vs Supply voltage
58
59
Unity-gain bandwidth
1
vs Supply voltage
vs Free-air temperature
vs Capacitive load
62
63
64
φ
m
Phase margin
V
n
Equivalent input noise voltage
Phase shift
vs Frequency
vs Frequency
65
60, 61
28
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
60
50
40
60
612 Amplifiers Tested From 6 Wafer Lots
612 Amplifiers Tested From 6 Wafer Lots
V
T
= 5 V
V
T
= 5 V
DD
= 25°C
DD
= 25°C
A
50
40
A
N Package
N Package
30
20
30
20
10
10
0
0
–5 –4 –3 –2 –1
0
1
2
3
4
5
–5 –4 –3 –2 –1
0
1
2
3
4
5
V
IO
– Input Offset Voltage – mV
V
IO
– Input Offset Voltage – mV
Figure 34
Figure 35
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
TEMPERATURE COEFFICIENT
60
50
60
224 Amplifiers Tested From 6 Water Lots
224 Amplifiers Tested From 6 Water Lots
V
T
= 10 V
V
T
= 5 V
DD
= 25°C to 125°C
DD
= 25°C to 125°C
50
40
30
20
10
0
A
A
P Package
P Package
Outliers:
(1) 34.6 µV/°C
Outliers:
(1) 33.0 µV/°C
40
30
20
10
0
– 10 – 8
10
– 6 – 4 – 2
0
2
4
6
8
– 10 – 8 – 6 – 4 – 2
0
2
4
6
8
10
α
– Temperature Coefficient – µV/°C
VIO
α
– Temperature Coefficient – µV/°C
VIO
Figure 36
Figure 37
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
29
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
16
14
12
10
8
5
V
= 100 mV
ID
= 25°C
V
= 100 mV
ID
= 25°C
T
A
T
A
V
= 16 V
DD
4
3
2
1
0
V
DD
= 5 V
V
DD
= 4 V
V
= 10 V
DD
V
DD
= 3 V
6
4
2
0
0
– 5 – 10 – 15 – 20 – 25 – 30 – 35 – 40
0
– 2
– 4
– 6
– 8
– 10
I
– High-Level Output Current – mA
I
– High-Level Output Current – mA
OH
OH
Figure 38
Figure 39
HIGH-LEVEL OUTPUT VOLTAGE
HIGH-LEVEL OUTPUT VOLTAGE
vs
vs
SUPPLY VOLTAGE
FREE-AIR TEMPERATURE
16
14
12
10
8
V
DD
– 1.6
– 1.7
– 1.8
– 1.9
– 2
V
R
= 100 mV
= 10 kΩ
ID
L
I
V
= –5 mA
= 100 mA
OH
ID
T
A
= 25°C
V
DD
= 5 V
V
= 10 V
DD
6
– 2.1
– 2.2
– 2.3
– 2.4
4
2
0
0
2
4
V
6
8
10
12
14
16
– 75 – 50 – 25
0
20
50
75
100 125
– Supply Voltage – V
DD
T
– Free-Air Temperature – °C
A
Figure 40
Figure 41
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
30
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
700
650
600
500
450
400
350
300
250
V
= 5 V
= 5 mA
DD
V
I
= 10 V
DD
I
OL
= 5 mA
OL
T
A
= 25°C
T
A
= 25°C
550
500
450
400
350
300
V
= –100 mV
ID
V
V
V
= –100 mV
= –1 V
ID
ID
ID
= –2.5 V
V
ID
= –1 V
0
1
2
3
4
0
1
2
3
4
5
6
7
8
9
10
V
IC
– Common-Mode Input Voltage – V
V
IC
– Common-Mode Input Voltage – V
Figure 42
Figure 43
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
FREE-AIR TEMPERATURE
800
700
600
500
400
300
200
100
0
900
800
700
600
500
400
300
200
100
0
I
V
T
= 5 mA
I
= 5 mA
OL
IC
A
OL
= |V /2|
V
V
= –1 V
= 0.5 V
ID
ID
IC
= 25°C
V
= 5 V
DD
V
= 5 V
DD
V
DD
= 10 V
V
DD
= 10 V
0
– 1 – 2 – 3 – 4 – 5 – 6 – 7 – 8 – 9 – 10
– 75 – 50 – 25
0
25
50
75
100 125
V
ID
– Differential Input Voltage – V
T
A
– Free-Air Temperature – °C
Figure 44
Figure 45
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
31
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
3
2.5
2
V
V
T
A
= –1 V
= 0.5 V
= 25°C
ID
IC
V
V
T
A
= –1 V
= 0.5 V
= 25°C
ID
IC
V
= 16 V
DD
V
= 5 V
DD
V
= 4 V
DD
V
= 10 V
DD
V
= 3 V
DD
1.5
1
0.5
0
0
1
I
2
3
4
5
6
7
8
0
5
10
15
20
25
30
– Low-Level Output Current – mA
OL
I
– Low-Level Output Current – mA
OL
Figure 46
Figure 47
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
vs
SUPPLY VOLTAGE
FREE-AIR TEMPERATURE
500
450
400
350
300
250
200
150
100
50
500
450
400
350
300
250
200
150
100
50
T
= –55°C
–40°C
A
R
= 100 kΩ
R
= 100 kΩ
L
L
0°C
25°C
70°C
V
DD
= 10 V
85°C
T
A
= 125°C
V
DD
= 5 V
0
0
0
2
4
6
8
10
12
14
16
–75 –50 –25
0
25
50
75
100 125
V
DD
– Supply Voltage – V
T
A
– Free-Air Temperature – °C
Figure 48
Figure 49
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
32
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)
INPUT BIAS CURRENT AND INPUT OFFSET
CURRENT
vs
MAXIMUM INPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
SUPPLY VOLTAGE
16
14
12
10
8
10000
1000
T
A
= 25°C
V
V
= 10 V
DD
= 5 V
IC
See Note A
I
IB
100
10
1
I
IO
6
4
2
0.1
0
25 35 45 55 65 75 85 95 105 115 125
0
2
4
6
8
10
– Supply Voltage – V
DD
12
14
16
T
– Free-Air Temperature – °C
V
A
NOTE A: The typical values of input bias current and input offset
current below 5 pA were determined mathematically.
Figure 50
Figure 51
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
400
250
225
200
175
150
125
100
75
V
O
= V /2
DD
V
= V /2
DD
O
T
A
= –55°C
350
300
250
200
150
100
50
No Load
No Load
–40°C
V
DD
= 10 V
0°C
25°C
V
DD
= 5 V
70°C
125°C
50
25
0
0
0
2
4
6
8
10
12
14
16
–75 –50 –25
0
25
50
75
100 125
V
DD
– Supply Voltage – V
T
– Free-Air Temperature – °C
A
Figure 52
Figure 53
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
33
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)
SLEW RATE
vs
SUPPLY VOLTAGE
SLEW RATE
vs
FREE-AIR TEMPERATURE
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
A
= 1
V
A
R
C
= 1
= 10 kΩ
= 20 pF
V
L
L
V
I(PP)
= 1 V
R
C
= 100 kΩ
= 20 pF
= 25°C
V
V
= 10 V
= 5.5 V
L
L
DD
I(PP)
See Figure 99
T
A
See Figure 99
V
V
= 10 V
= 1 V
DD
I(PP)
V
V
= 5 V
DD
I(PP)
= 1 V
V
V
= 5 V
DD
= 2.5 V
I(PP)
0
2
4
6
8
10
12
14
16
–75 –50 –25
0
25
50
75
100 125
V
DD
– Supply Voltage – V
T
A
– Free-Air Temperature – °C
Figure 54
Figure 55
BIAS-SELECT CURRENT
vs
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
FREQUENCY
–300
–270
–240
–210
–180
–150
–120
–90
10
9
8
7
6
5
4
3
2
1
0
T
= 25°C
A
V
) = 1/2 V
I(SEL
DD
V
V
= 10 V
DD
T
= 125°C
= 25°C
= –55°C
A
T
A
T
A
= 5 V
DD
R
= 100 kΩ
–60
L
See Figure 99
–30
0
0
2
4
V
6
8
10
12
14
16
1
10
100
1000
– Supply Voltage – V
DD
f – Frequency – kHz
Figure 56
Figure 57
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
34
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)
UNITY-GAIN BANDWIDTH
vs
UNITY-GAIN BANDWIDTH
vs
SUPPLY VOLTAGE
FREE-AIR TEMPERATURE
800
750
700
650
600
550
500
450
400
900
800
700
600
500
400
300
V
= 5 V
V = 10 mV
I
DD
V = 10 mV
C
= 20 pF
L
A
I
C
T
= 25°C
= 20 pF
L
See Figure 101
See Figure 101
0
2
4
6
8
10
12
14
16
–75 –50
–25
0
25
50
75
100 125
V
DD
– Supply Voltage – V
T
A
– Free-Air Temperature – °C
Figure 58
Figure 59
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
7
6
5
4
3
2
1
10
10
10
10
10
10
10
V
R
T
A
= 5 V
= 100 kΩ
= 25°C
DD
L
0°
30°
A
VD
60°
90°
Phase Shift
120°
150°
180°
1
0.1
1
10
100
1 k
10
100 K 1 M
f – Frequency – Hz
Figure 60
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
35
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
7
10
V
R
T
A
= 10 V
= 100 kΩ
= 25°C
DD
L
6
5
4
3
2
1
10
10
10
10
10
10
0°
30°
A
VD
60°
90°
Phase Shift
120°
150°
180°
1
0.1
1
10
100
1 k
10 k 100 k
1 M
f – Frequency – Hz
Figure 61
PHASE MARGIN
vs
PHASE MARGIN
vs
SUPPLY VOLTAGE
FREE-AIR TEMPERATURE
50°
48°
46°
44°
42°
40°
38°
45°
43°
41°
39°
37°
35°
V
= 5 V
V = 10 mV
DD
V = 10 mV
I
C
T
= 20 pF
= 25°C
L
A
I
L
C
= 20 pF
See Figure 100
See Figure 100
–75 –50 –25
0
25
50
75
100 125
0
2
4
6
8
10
12
14
16
T
A
– Free-Air Temperature – °C
V
DD
– Supply Voltage – V
Figure 62
Figure 63
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
36
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)
PHASE MARGIN
vs
CAPACITIVE LOAD
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
44°
42°
40°
38°
36°
34°
32°
30°
28°
300
250
200
150
100
50
V
R
= 5 V
= 20 Ω
= 25°C
DD
S
V
= 5 V
DD
V = 10 mV
I
A
T
A
T
= 25°C
See Figure 99
See Figure 100
0
0
20
40
60
80
100
1
10
100
1000
C
– Capacitive Load – pF
f – Frequency – Hz
L
Figure 64
Figure 65
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
37
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
LOW-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271C, TLC271AC, TLC271BC
TEST
†
V
= 5 V
DD
TYP
V
= 10 V
DD
TYP
T
A
PARAMETER
UNIT
CONDITIONS
MIN
MAX
10
MIN
MAX
10
25°C
Full range
25°C
1.1
1.1
TLC271C
TLC271AC
TLC271BC
12
5
12
5
V
V
R
= 1.4 V,
= 0 V,
O
S
I
0.9
0.9
V
IO
Input offset voltage
mV
= 50 Ω,
R = 1 MΩ
Full range
25°C
6.5
2
6.5
2
0.24
1.1
0.26
Full range
3
3
Average temperature coefficient of
input offset voltage
25°C to
70°C
α
1
µV/°C
VIO
25°C
70°C
25°C
70°C
0.1
7
60
300
60
0.1
8
60
300
60
V
V
= V
/2,
/2
O
IC
DD
= V
I
Input offset current (see Note 4)
Input bias current (see Note 4)
pA
IO
DD
0.6
40
0.7
50
V
V
= V
DD
= V
/2,
/2
O
IC
I
IB
pA
V
600
600
DD
–0.2
to
–0.3
to
–0.2
to
–0.3
to
25°C
4
4.2
9
9.2
Common-mode input
voltage range (see Note 5)
V
ICR
–0.2
to
–0.2
to
Full range
V
V
3.5
8.5
25°C
0°C
3.2
3
4.1
4.1
4.2
0
8
7.8
7.8
8.9
8.9
8.9
0
V
= 100 mV,
ID
L
V
V
High-level output voltage
Low-level output voltage
OH
R = 1 MΩ
70°C
25°C
0°C
3
50
50
50
50
50
50
V
= –100 mV,
= 0
ID
0
0
mV
V/mV
dB
OL
I
OL
70°C
25°C
0°C
0
0
50
50
50
65
60
60
70
60
60
520
700
380
94
95
95
97
97
98
65
10
12
8
50
50
50
65
60
60
70
60
60
870
1030
660
97
Large-signal differential
voltage amplification
R = 1 MΩ,
See Note 6
L
A
VD
70°C
25°C
0°C
CMRR Common-mode rejection ratio
V
IC
= V
min
ICR
97
70°C
25°C
0°C
97
97
Supply-voltage rejection ratio
V
V
= 5 V to 10 V
DD
= 1.4 V
O
k
97
dB
nA
µA
SVR
I(SEL)
DD
(∆V
DD
/∆V
IO
)
70°C
25°C
25°C
0°C
98
I
I
Input current (BIAS SELECT)
Supply current
V
= V
95
I(SEL)
DD
17
21
14
14
23
33
20
V
V
= V
/2,
/2,
DD
O
IC
DD
= V
18
No load
70°C
11
†
Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At V
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.
DD O
DD
O
38
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
LOW-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271I, TLC271AI, TLC271BI
TEST
†
V
= 5 V
DD
TYP
V
= 10 V
DD
TYP
T
A
PARAMETER
UNIT
CONDITIONS
MIN
MAX
10
MIN
MAX
10
25°C
Full range
25°C
1.1
1.1
TLC271I
TLC271AI
TLC271BI
13
5
13
5
V
V
R
R
= 1.4 V,
= 0 V,
O
S
L
0.9
0.9
V
IO
Input offset voltage
mV
= 50 Ω,
= 1 MΩ
Full range
25°C
7
7
0.24
1.1
2
0.26
2
Full range
3.5
3.5
Average temperature coefficient
of input offset voltage
25°C to
85°C
α
1
µV/°C
VIO
25°C
85°C
25°C
85°C
0.1
24
60
1000
60
0.1
26
60
1000
60
V
V
= V
/2,
/2
O
IC
DD
= V
I
Input offset current (see Note 4)
Input bias current (see Note 4)
pA
IO
DD
0.6
200
0.7
220
V
V
= V
DD
= V
/2,
/2
O
IC
I
IB
pA
V
2000
2000
DD
–0.2
to
–0.3
to
–0.2
to
–0.3
to
25°C
4
4.2
9
9.2
Common-mode input
voltage range (see Note 5)
V
ICR
–0.2
to
–0.2
to
Full range
V
V
3.5
8.5
25°C
–40°C
85°C
3
3
3
4.1
4.1
4.2
0
8
7.8
7.8
8.9
8.9
8.9
0
V
= 100 mV,
ID
L
V
V
High-level output voltage
Low-level output voltage
OH
R = 1 MΩ
25°C
50
50
50
50
50
50
V
= –100 mV,
= 0
ID
–40°C
85°C
0
0
mV
V/mV
dB
OL
I
OL
0
0
25°C
50
50
50
65
60
60
70
60
60
520
900
330
94
95
95
97
97
98
65
10
16
17
50
50
50
65
60
60
70
60
60
870
1550
585
97
Large-signal differential
voltage amplification
R = 1 MΩ
See Note 6
L
A
VD
–40°C
85°C
25°C
CMRR Common-mode rejection ratio
V
IC
= V
min
ICR
–40°C
85°C
97
98
25°C
97
Supply-voltage rejection ratio
V
V
= 5 V to 10 V
DD
= 1.4 V
O
k
–40°C
85°C
97
dB
nA
µA
SVR
I(SEL)
DD
(∆V
DD
/∆V
IO
)
98
I
I
Input current (BIAS SELECT)
Supply current
V
= V
25°C
95
I(SEL)
DD
25°C
17
27
13
14
23
43
18
V
V
= V
/2,
/2,
DD
O
IC
DD
= V
–40°C
85°C
25
No load
10
†
Full range is –40 to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At V
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.
DD O
DD
O
39
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
LOW-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TLC271M
TEST
CONDITIONS
†
V
= 5 V
V
= 10 V
T
PARAMETER
UNIT
DD
TYP
DD
TYP
A
MIN
MAX
10
MIN
MAX
10
V
V
= 1.4 V,
= 0 V,
O
IC
25°C
1.1
1.1
V
IO
Input offset voltage
mV
R
R
= 50 Ω,
= 1 MΩ
S
L
Full range
12
12
Average temperature coefficient
of input offset voltage
25°C to
125°C
α
1.4
1.4
µV/°C
VIO
25°C
125°C
25°C
0.1
1.4
0.6
9
60
15
60
35
0.1
1.8
0.7
10
60
15
60
35
pA
nA
pA
nA
V
V
= V
/2,
/2
O
IC
DD
= V
I
Input offset current (see Note 4)
Input bias current (see Note 4)
IO
DD
V
V
= V
DD
= V
/2,
/2
O
IC
I
IB
125°C
DD
0
to
4
–0.3
to
4.2
0
to
9
–0.3
to
9.2
25°C
V
V
Common-mode input
voltage range (see Note 5)
V
ICR
0
to
0
to
Full range
3.5
8.5
25°C
–55°C
125°C
25°C
3.2
3
4.1
4.1
4.2
0
8
7.8
7.8
8.9
8.8
9
V
= 100 mV,
ID
L
V
V
High-level output voltage
Low-level output voltage
V
mV
OH
R = 1 MΩ
3
50
50
50
0
50
50
50
V
= –100 mV,
= 0
ID
–55°C
125°C
25°C
0
0
OL
I
OL
0
0
50
25
25
65
60
60
70
60
60
520
1000
200
94
95
85
97
97
98
65
10
17
7
50
25
25
65
60
60
70
60
60
870
1775
380
97
97
91
97
97
98
95
14
28
9
Large-signal differential
voltage amplification
R = 1 MΩ,
See Note 6
L
A
VD
–55°C
125°C
25°C
V/mV
dB
CMRR Common-mode rejection ratio
V
IC
= V
min
ICR
–55°C
125°C
25°C
Supply-voltage rejection ratio
V
V
= 5 V to 10 V
DD
= 1.4 V
O
k
–55°C
125°C
25°C
dB
nA
µA
SVR
I(SEL)
DD
(∆V
DD
/∆V
IO
)
I
I
Input current (BIAS SELECT)
Supply current
V
= V
I(SEL)
DD
25°C
17
30
12
23
48
15
V
V
= V
/2,
/2,
DD
O
IC
DD
= V
–55°C
125°C
No load
†
Full range is –55°C to 125°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At V
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.
DD
O
DD O
40
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
LOW-BIAS MODE
operating characteristics at specified free-air temperature, V
= 5 V
DD
TLC271C, TLC271AC,
TLC271BC
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
0.03
0.04
0.03
0.03
0.03
0.02
MAX
25°C
0°C
V
= 1 V
I(PP)
I(PP)
R
C
= 1 MΩ,
= 20 pF,
L
L
70°C
25°C
0°C
SR
Slew rate at unity gain
V/µs
See Figure 98
V
= 2.5 V
70°C
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
68
nV/√Hz
25°C
0°C
5
6
V
R
= V
,
C
= 20 pF,
O
L
OH
= 1 MΩ,
L
B
Maximum output-swing bandwidth
kHz
OM
1
See Figure 98
70°C
25°C
0°C
4.5
85
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
B
Unity-gain bandwidth
Phase margin
100
65
kHz
70°C
25°C
0°C
34°
36°
30°
V = 10 mV,
f = B ,
1
See Figure 100
I
φ
m
C
= 20 pF,
L
70°C
operating characteristics at specified free-air temperature, V
= 10 V
DD
TLC271C, TLC271AC,
TLC271BC
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
0.05
0.05
0.04
0.04
0.05
0.04
MAX
25°C
0°C
V
= 1 V
I(PP)
I(PP)
R
C
= 1 MΩ,
= 20 pF,
L
L
70°C
25°C
0°C
SR
Slew rate at unity gain
V/µs
See Figure 98
V
= 5.5 V
70°C
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
68
nV/√Hz
25°C
0°C
1
1.3
0.9
110
125
90
V
R
= V
,
C
= 20 pF,
O
L
OH
= 1 MΩ,
L
B
B
Maximum output-swing bandwidth
kHz
OM
See Figure 98
70°C
25°C
0°C
V = 10 mV,
I
See Figure 100
C
= 20 pF,
L
Unity-gain bandwidth
Phase margin
kHz
1
70°C
25°C
0°C
38°
40°
34°
V = 10 mV,
f = B ,
1
See Figure 100
I
φ
m
C
= 20 pF,
L
70°C
41
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
LOW-BIAS MODE
operating characteristics at specified free-air temperature, V
= 5 V
DD
TLC271I, TLC271AI,
TLC271BI
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
0.03
0.04
0.03
0.03
0.04
0.02
MAX
25°C
–40°C
85°C
V
= 1 V
I(PP)
I(PP)
R
C
= 1 MΩ,
= 20 pF,
L
L
SR
Slew rate at unity gain
V/µs
25°C
See Figure 98
V
= 2.5 V
–40°C
85°C
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
68
nV/√Hz
25°C
–40°C
85°C
5
7
V
R
= V
,
C
= 20 pF,
O
L
OH
= 1 MΩ,
L
B
Maximum output-swing bandwidth
kHz
OM
1
See Figure 98
4
25°C
85
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
B
Unity-gain bandwidth
Phase margin
–40°C
85°C
130
55
MHz
25°C
34°
38°
28°
V = 10 mV,
f = B ,
1
See Figure 100
I
φ
m
–40°C
85°C
C
= 20 pF,
L
operating characteristics at specified free-air temperature, V
= 10 V
DD
TLC271C, TLC271AC,
TLC271BC
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
TYP
0.05
0.06
0.03
0.04
0.05
0.03
MAX
25°C
–40°C
85°C
V
= 1 V
I(PP)
I(PP)
R
C
= 1 MΩ,
= 20 pF,
L
L
SR
Slew rate at unity gain
V/µs
25°C
See Figure 98
V
= 5.5 V
–40°C
85°C
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
68
nV/√Hz
25°C
–40°C
85°C
1
1.4
0.8
110
155
80
V
R
= V
,
C
= 20 pF,
O
L
OH
= 1 MΩ,
L
B
B
Maximum output-swing bandwidth
kHz
OM
See Figure 98
25°C
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
Unity-gain bandwidth
Phase margin
–40°C
85°C
MHz
1
25°C
38°
42°
32°
V = 10 mV,l
f = B ,
1
See Figure 100
I
φ
m
–40°C
85°C
C
= 20 pF,
L
42
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
LOW-BIAS MODE
operating characteristics at specified free-air temperature, V
= 5 V
DD
TLC271M
TYP
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
MAX
25°C
–55°C
125°C
25°C
0.03
V
= 1 V
0.04
I(PP)
I(PP)
R
C
= 1 MΩ,
= 20 pF,
L
L
0.02
SR
Slew rate at unity gain
V/µs
0.03
See Figure 98
V
= 2.5 V
–55°C
125°C
0.04
0.02
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
68
nV/√Hz
25°C
–55°C
125°C
25°C
5
8
V
R
= V
,
C
= 20 pF,
O
L
OH
= 1 MΩ,
L
B
B
Maximum output-swing bandwidth
kHz
OM
See Figure 98
3
85
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
Unity-gain bandwidth
Phase margin
–55°C
125°C
25°C
140
45
kHz
1
34°
39°
25°
V = 10 mV,
f = B ,
1
See Figure 100
I
φ
m
–55°C
125°C
C
= 20 pF,
L
operating characteristics at specified free-air temperature, V
= 10 V
DD
TLC271M
TYP
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
MAX
25°C
–55°C
125°C
25°C
0.05
V
= 1 V
0.06
I(PP)
I(PP)
R
C
= 1 MΩ,
= 20 pF,
L
L
0.03
SR
Slew rate at unity gain
V/µs
0.04
See Figure 98
V
= 5.5 V
–55°C
125°C
0.06
0.03
f = 1 kHz,
See Figure 99
R
= 20 Ω,
S
V
n
Equivalent input noise voltage
25°C
68
nV/√Hz
25°C
–55°C
125°C
25°C
1
1.5
0.7
110
165
70
V
R
= V
,
C
= 20 pF,
O
L
OH
= 1 MΩ,
L
B
Maximum output-swing bandwidth
kHz
OM
1
See Figure 98
V = 10 mV,
I
See Figure 100
C = 20 pF,
L
B
Unity-gain bandwidth
Phase margin
–55°C
125°C
25°C
kHz
38°
43°
29°
V = 10 mV,
f = B ,
1
See Figure 100
I
φ
m
–55°C
125°C
C
= 20 pF,
L
43
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)
Table of Graphs
FIGURE
66, 67
V
Input offset voltage
Distribution
Distribution
IO
α
Temperature coefficient
68, 69
VIO
vs High-level output current
vs Supply voltage
70, 71
72
V
V
A
High-level output voltage
OH
OL
vs Free-air temperature
73
vs Common-mode input voltage
vs Differential input voltage
vs Free-air temperature
74, 75
76
77
Low-level output voltage
vs Low-level output current
78, 79
vs Supply voltage
vs Free-air temperature
vs Frequency
80
81
92, 93
Large-signal differential voltage amplification
VD
I
I
Input bias current
vs Free-air temperature
vs Free-air temperature
vs Supply voltage
82
82
83
IB
Input offset current
Maximum input voltage
IO
V
I
vs Supply voltage
vs Free-air temperature
84
85
I
Supply current
Slew rate
DD
vs Supply voltage
vs Free-air temperature
86
87
SR
Bias-select current
vs Supply voltage
vs Frequency
88
89
V
B
Maximum peak-to-peak output voltage
O(PP)
vs Free-air temperature
vs Supply voltage
90
91
Unity-gain bandwidth
1
vs Supply voltage
vs Free-air temperature
vs Capacitive load
94
95
96
φ
m
Phase margin
V
n
Equivalent input noise voltage
Phase shift
vs Frequency
vs Frequency
97
92, 93
44
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
905 Amplifiers Tested From 6 Wafer Lots
905 Amplifiers Tested From 6 Wafer Lots
V
T
A
= 5 V
DD
= 25°C
V
= 10 V
DD
= 25°C
T
A
P Package
P Package
–5 –4 –3 –2 –1
0
1
2
3
4
5
–5 –4 –3 –2 –1
0
1
2
3
4
5
V
IO
– Input Offset Voltage – mV
V
IO
– Input Offset Voltage – mV
Figure 66
Figure 67
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
DISTRIBUTION OF TLC271
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
TEMPERATURE COEFFICIENT
70
60
50
40
30
20
10
0
70
356 Amplifiers Tested From 8 Wafer Lots
356 Amplifiers Tested From 8 Wafer Lots
V
T
A
= 5 V
V
T
A
= 10 V
DD
= 25°C to 125°C
DD
= 25°C to 125°C
60
50
40
30
20
10
0
P Package
Outliers:
(1) 19.2 µV/°C
(1) 12.1 µV/°C
P Package
Outliers:
(1) 18.7 µV/°C
(1) 11.6 µV/°C
–10 –8 –6 –4 –2
0
2
4
6
8
10
–10 –8 –6 –4 –2
0
2
4
6
8
10
α
– Temperature Coefficient – µV/°C
α
– Temperature Coefficient – µV/°C
VIO
VIO
Figure 68
Figure 69
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
45
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT CURRENT
16
14
12
10
8
5
V
T
= 100 mV
V
T
= 100 mV
= 25°C
ID
= 25°C
ID
A
A
V
= 16 V
DD
4
3
2
1
0
V
DD
= 5 V
V
DD
= 4 V
V
= 10 V
DD
V
= 3 V
DD
6
4
2
0
0
–5 –10 –15 –20 –25 –30 –35 –40
0
–2
–4
–6
–8
–10
I
– High-Level Output Current – mA
I
– High-Level Output Current – mA
OH
OH
Figure 70
Figure 71
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
SUPPLY VOLTAGE
–1.6
–1.7
–1.8
–1.9
–2
16
14
12
10
8
I
= –5 mA
OH
V
R
T
= 100 mV
= 1 MΩ
= 25°C
ID
L
A
V
= 100 mV
ID
V
DD
= 5 V
V
DD
= 10 V
–2.1
–2.2
–2.3
–2.4
6
4
2
0
–75 –50 –25
0
25
50
75
100 125
0
2
4
6
8
10
12
14
16
T
A
– Free-Air Temperature – °C
V
DD
– Supply Voltage – V
Figure 72
Figure 73
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
46
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
COMMON-MODE INPUT VOLTAGE
700
500
450
400
350
300
250
V
= 5 V
= 5 mA
= 25°C
DD
V
DD
= 10 V
I
OL
I
= 5 mA
OL
650
600
T
A
T
A
= 25°C
550
500
V
= –100 mV
ID
V
ID
V
ID
V
ID
= –100 mV
= –1 V
450
400
= –2.5 V
V
ID
= –1 V
350
300
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
V
IC
– Common-Mode Input Voltage – V
V
IC
– Common-Mode Input Voltage – V
Figure 74
Figure 75
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
FREE-AIR TEMPERATURE
800
700
600
500
400
300
200
100
0
900
800
700
600
500
400
300
200
100
0
I
V
T
= 5 mA
I
V
= 5 mA
= –1 V
OL
IC
A
OL
ID
IC
= V /2
ID
= 25°C
V
= 0.5 V
V
= 5 V
DD
V
= 5 V
DD
V
DD
= 10 V
V
= 10 V
DD
–75 –50 –25
0
25
50
75
100 125
0
–1 –2 –3 –4 –5 –6 –7 –8 –9 –10
T
A
– Free-Air Temperature – °C
V
ID
– Differential Input Voltage – V
Figure 76
Figure 77
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
47
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
3
2.5
2
V
V
= –1 V
= 0.5 V
ID
IC
V
V
= –1 V
ID
= 0.5 V
IC
T
A
= 25°C
T
A
= 25°C
V = 16 V
DD
V
= 5 V
DD
V
= 4 V
DD
V
= 10 V
V
= 3 V
DD
DD
1.5
1
0.5
0
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
I
– Low-Level Output Current – mA
OL
I
– Low-Level Output Current – mA
OL
Figure 78
Figure 79
LARGE-SIGNAL
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
vs
FREE-AIR TEMPERATURE
SUPPLY VOLTAGE
2000
1800
1600
1400
1200
1000
800
2000
1800
1600
1400
1200
1000
800
T
A
= –55°C
R
= 1 MΩ
R
= 1 MΩ
L
L
– 40°C
= 0°C
T
A
V
DD
= 10 V
25°C
70°C
85°C
600
600
V
DD
= 5 V
400
400
125°C
200
200
0
0
–75 –50 –25
0
25
50
75
100 125
0
2
4
6
8
10
12
14
16
T
A
– Free-Air Temperature – °C
V
DD
– Supply Voltage – V
Figure 80
Figure 81
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
48
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)
INPUT BIAS CURRENT AND INPUT OFFSET
CURRENT
vs
FREE-AIR TEMPERATURE
MAXIMUM INPUT VOLTAGE
vs
SUPPLY VOLTAGE
10000
1000
100
10
16
14
12
10
8
V
V
= 10 V
DD
= 5 V
T
A
= 25°C
IC
See Note A
I
IB
I
IO
6
4
1
2
0.1
0
25 35 45 55 65 75 85 95 105 115 125
– Free-Air Temperature – °C
0
2
4
6
8
10
12
14
16
T
A
V
– Supply Voltage – V
DD
NOTE A: The typical values of input bias current and input offset
current below 5 pA were determined mathematically.
Figure 82
Figure 83
SUPPLY CURRENT
vs
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
FREE-AIR TEMPERATURE
30
45
T = –55°C
A
V
= V /2
DD
O
V
= V /2
DD
O
40
35
30
25
20
15
10
5
No Load
No Load
25
20
15
10
5
–40°C
V
= 10 V
DD
0°C
25°C
70°C
V
DD
= 5 V
125°C
0
0
0
–75 –50 –25
0
25
50
75
100 125
2
4
6
8
10
12
14
16
T
A
– Free-Air Temperature – °C
V
DD
– Supply Voltage – V
Figure 84
Figure 85
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
49
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)
SLEW RATE
vs
SLEW RATE
vs
SUPPLY VOLTAGE
FREE-AIR TEMPERATURE
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
A
= 1
V
R
C
= 1 MΩ
V
I(PP)
= 1 V
L
L
V
V
= 10 V
= 5.5 V
DD
I(PP)
= 20 pF
= 1
R
C
= 1 MΩ
= 20 pF
L
L
A
V
See Figure 98
T = 25°C
A
See Figure 98
V
V
= 10 V
= 1 V
DD
I(PP)
V
V
= 5 V
DD
= 1 V
I(PP)
V
V
= 5 V
= 2.5 V
DD
I(PP)
0
2
4
6
8
10
12
14
16
–75 –50 –25
0
25
50
75
100 125
V
DD
– Supply Voltage – V
T
A
– Free-Air Temperature – °C
Figure 86
Figure 87
BIAS-SELECT CURRENT
vs
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
FREQUENCY
150
135
120
10
9
8
7
6
5
4
3
2
1
0
T
= 25°C
A
V
= V
DD
I(SEL)
T
= 125°C
= 25°C
= –55°C
A
V
= 10 V
= 5 V
DD
T
A
105
90
75
60
45
30
15
0
T
A
V
DD
R
= 1 MΩ
L
See Figure 98
0
2
4
6
8
10
12
14
16
0.1
1
10
100
V
DD
– Supply Voltage – V
f – Frequency – kHz
Figure 88
Figure 89
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
50
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)
UNITY-GAIN BANDWIDTH
vs
UNITY-GAIN BANDWIDTH
vs
FREE-AIR TEMPERATURE
SUPPLY VOLTAGE
150
130
110
90
140
130
120
110
100
90
V
= 5 V
V = 10 mV
I
L
DD
V = 10 mV
C
= 20 pF
I
C
T
A
= 25°C
= 20 pF
L
See Figure 100
See Figure 100
70
80
70
50
60
30
50
–75 –50 –25
0
25
50
75
100 125
0
2
4
6
8
10
12
14
16
T
A
– Free-Air Temperature – °C
V
DD
– Supply Voltage – V
Figure 90
Figure 91
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
7
6
5
4
3
2
1
10
10
10
10
10
10
10
V
= 5 V
DD
R
T
A
= 1 MΩ
= 25°C
L
0°
30°
A
VD
60°
90°
Phase Shift
120°
150°
180°
1
0.1
1
10
100
1 k
10 k 100 k
1 M
f – Frequency – Hz
Figure 92
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
51
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
7
10
6
10
5
10
V
R
T
A
= 10 V
= 1 MΩ
= 25°C
DD
L
0°
4
3
2
1
10
10
10
10
30°
A
VD
60°
90°
Phase Shift
120°
150°
180°
1
0.1
1
10
100
1 k
10 k 100 k
1 M
f – Frequency – Hz
Figure 93
PHASE MARGIN
vs
PHASE MARGIN
vs
SUPPLY VOLTAGE
FREE-AIR TEMPERATURE
42°
40°
38°
36°
34°
32°
30°
40°
V
= 5 mV
V = 10 mV
DD
V = 10 mV
I
C
= 20 pF
I
C
38°
36°
L
= 20 pF
L
T
A
= 25°C
See Figure 100
See Figure 100
34°
32°
30°
28°
26°
24°
22°
20°
0
2
4
6
8
10
12
14
16
–75 –50 –25
0
25
50
75
100 125
V
DD
– Supply Voltage – V
T
A
– Free-Air Temperature – °C
Figure 94
Figure 95
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
52
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
†
TYPICAL CHARACTERISTICS (LOW-BIAS MODE)
PHASE MARGIN
vs
CAPACITIVE LOAD
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
37°
35°
33°
31°
29°
27°
25°
200
175
150
125
100
75
V
= 5 mV
V
= 5 V
= 20Ω
DD
DD
V = 10 mV
I
R
S
T
= 25°C
A
T
= 25°C
A
See Figure 100
See Figure 99
50
25
0
0
10 20 30 40 50 60 70 80 90 100
1
10
100
1000
C
– Capacitive Load – pF
f – Frequency – Hz
L
Figure 96
Figure 97
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
53
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
PARAMETER MEASUREMENT INFORMATION
single-supply versus split-supply test circuits
Because the TLC271 is optimized for single-supply operation, circuit configurations used for the various tests
often present some inconvenience since the input signal, in many cases, must be offset from ground. This
inconvenience can be avoided by testing the device with split supplies and the output load tied to the negative
rail. A comparison of single-supply versus split-supply test circuits is shown below. The use of either circuit gives
the same result.
V
DD
V
DD+
–
–
V
O
V
O
+
+
V
I
V
I
C
R
C
R
L
L
L
L
V
DD–
(a) SINGLE SUPPLY
(b) SPLIT SUPPLY
Figure 98. Unity-Gain Amplifier
2 kΩ
2 kΩ
V
DD
V
DD+
20 Ω
20 Ω
–
–
1/2 V
V
O
V
O
DD
+
+
20 Ω
20 Ω
V
DD–
(a) SINGLE SUPPLY
(b) SPLIT SUPPLY
Figure 99. Noise-Test Circuit
10 kΩ
10 kΩ
V
DD+
V
DD
100 Ω
100 Ω
–
–
V
I
V
I
V
O
V
O
+
+
1/2 V
DD
C
C
L
L
V
DD–
(a) SINGLE SUPPLY
(b) SPLIT SUPPLY
Figure 100. Gain-of-100 Inverting Amplifier
54
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
PARAMETER MEASUREMENT INFORMATION
input bias current
Because of the high input impedance of the TLC271 operational amplifiers, attempts to measure the input bias
current can result in erroneous readings. The bias current at normal room ambient temperature is typically less
than 1 pA, a value that is easily exceeded by leakages on the test socket. Two suggestions are offered to avoid
erroneous measurements:
1. Isolate the device from other potential leakage sources. Use a grounded shield around and between the
device inputs (see Figure 101). Leakages that would otherwise flow to the inputs are shunted away.
2. Compensate for the leakage of the test socket by actually performing an input bias current test (using a
picoammeter) with no device in the test socket. The actual input bias current can then be calculated by
subtracting the open-socket leakage readings from the readings obtained with a device in the test socket.
One word of caution: many automatic testers as well as some bench-top operational amplifier testers us the
servo-loop technique with a resistor in series with the device input to measure the input bias current (the voltage
drop across the series resistor is measured and the bias current is calculated). This method requires that a
device be inserted into the test socket to obtain a correct reading; therefore, an open-socket reading is not
feasible using this method.
8
5
V = V
IC
1
4
Figure 101. Isolation Metal Around Device inputs (JG and P packages)
low-level output voltage
To obtain low-supply-voltage operation, some compromise is necessary in the input stage. This compromise
results in the device low-level output being dependent on both the common-mode input voltage level as well
as the differential input voltage level. When attempting to correlate low-level output readings with those quoted
in the electrical specifications, these two conditions should be observed. If conditions other than these are to
be used, please refer to the Typical Characteristics section of this data sheet.
input offset voltage temperature coefficient
Erroneous readings often result from attempts to measure temperature coefficient of input offset voltage. This
parameter is actually a calculation using input offset voltage measurements obtained at two different
temperatures. When one (or both) of the temperatures is below freezing, moisture can collect on both the device
and the test socket. This moisture results in leakage and contact resistance which can cause erroneous input
offset voltage readings. The isolation techniques previously mentioned have no effect on the leakage since the
moisture also covers the isolation metal itself, thereby rendering it useless. It is suggested that these
measurements be performed at temperatures above freezing to minimize error.
55
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
PARAMETER MEASUREMENT INFORMATION
full-power response
Full-power response, the frequency above which the amplifier slew rate limits the output voltage swing, is often
specified two ways: full-linear response and full-peak response. The full-linear response is generally
measuredby monitoring the distortion level of the output while increasing the frequency of a sinusoidal input
signal until the maximum frequency is found above which the output contains significant distortion. The full-peak
response is defined as the maximum output frequency, without regard to distortion, above which full
peak-to-peak output swing cannot be maintained.
Because there is no industry-wide accepted value for significant distortion, the full-peak response is specified
in this data sheet and is measured using the circuit of Figure 98. The initial setup involves the use of a sinusoidal
input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is
increased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the same
amplitude. Thefrequencyisthenincreaseduntilthemaximumpeak-to-peakoutputcannolongerbemaintained
(Figure 102). A square wave is used to allow a more accurate determination of the point at which the maximum
peak-to-peak output is reached.
(a) f = 100 Hz
(b) B
> f > 100 Hz
(c) f = B
(d) f > B
OM
OM
OM
Figure 102. Full-Power-Response Output Signal
test time
Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume,
short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFET
devices, and require longer test times than their bipolar and BiFET counterparts. The problem becomes more
pronounced with reduced supply levels and lower temperatures.
APPLICATION INFORMATION
V
DD
single-supply operation
R4
R1
While the TLC271 performs well using dual power
supplies (also called balanced or split supplies),
the design is optimized for single-supply
operation. This includes an input common mode
voltage range that encompasses ground as well
as an output voltage range that pulls down to
ground. The supply voltage range extends down
to 3 V (C-suffix types), thus allowing operation
withsupplylevelscommonlyavailableforTTLand
HCMOS; however, for maximum dynamic range,
16-V single-supply operation is recommended.
–
V
I
R2
V
O
+
V
R3
R1 R3
ref
V
V
ref
DD
ref
R3
C
0.01 µF
R4
V )
V
(V
V
O
I
ref
R2
Figure 103. Inverting Amplifier With Voltage
Reference
56
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION
single-supply operation (continued)
Many single-supply applications require that a voltage be applied to one input to establish a reference level that
is above ground. A resistive voltage divider is usually sufficient to establish this reference level (see Figure 103).
The low input bias current consumption of the TLC271 permits the use of very large resistive values to
implement the voltage divider, thus minimizing power consumption.
The TLC271 works well in conjunction with digital logic; however, when powering both linear devices and digital
logic from the same power supply, the following precautions are recommended:
1. Powerthelineardevicesfromseparatebypassedsupplylines(seeFigure104);otherwise, thelineardevice
supply rails can fluctuate due to voltage drops caused by high switching currents in the digital logic.
2. Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive
decoupling is often adequate; however, RC decoupling may be necessary in high-frequency applications.
–
Power
Supply
Logic
Logic
Logic
OUT
+
(a) COMMON SUPPLY RAILS
–
Power
Supply
OUT
Logic
Logic
Logic
+
(b) SEPARATE BYPASSED SUPPLY RAILS (preferred)
Figure 104. Common Versus Separate Supply Rails
57
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION
input offset voltage nulling
The TLC271 offers external input offset null control. Nulling of the input off set voltage may be achieved by
adjusting a 25-kΩ potentiometer connected between the offset null terminals with the wiper Connected as
shown in Figure 105. The amount of nulling range varies with the bias selection. In the high-bias mode, the
nulling range allows the maximum offset voltage specified to be trimmed to zero. In low-bias and medium-bias
modes, total nulling may not be possible.
–
–
IN–
IN–
OUT
OUT
N2
N2
V
DD
+
+
IN+
IN+
25 kΩ
25 kΩ
N1
N1
GND
(a) SINGLE SUPPLY
(b) SPLIT SUPPLY
Figure 105. Input Offset Voltage Null Circuit
bias selection
Bias selection is achieved by connecting the bias select pin to one of the three voltage levels (see Figure 106).
For medium-bias applications, R is recommended that the bias select pin be connected to the mid-point
between the supply rails. This is a simple procedure in split-supply applications, since this point is ground. In
single-supply applications, the medium-bias mode necessitates using a voltage divider as indicated. The use
of large-value resistors in the voltage divider reduces the current drain of the divider from the supply line.
However, large-value resistors used in conjunction with a large-value capacitor requires significant time to
charge up to the supply midpoint after the supply is switched on. A voltage other than the midpoint may be used
if it is within the voltages specified in the table of Figure 106.
V
DD
BIAS-SELECT VOLTAGE
(single supply)
Low
Medium
1 MΩ
BIAS MODE
To BIAS SELECT
Low
Medium
High
V
DD
1 V to V
High
– 1 V
DD
GND
1 MΩ
0.01 µF
Figure 106. Bias Selection for Single-Supply Applications
58
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION
input characteristics
The TLC271 is specified with a minimum and a maximum input voltage that, if exceeded at either input, could
cause the device to malfunction. Exceeding this specified range is a common problem, especially in
single-supply operation. Note that the lower range limit includes the negative rail, while the upper range limit
is specified at V
– 1 V at T = 25°C and at V
– 1.5 V at all other temperatures.
DD
A
DD
The use of the polysilicon-gate process and the careful input circuit design gives the TLC271 very good input
offset voltage drift characteristics relative to conventional metal-gate processes. Offset voltage drift in CMOS
devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus dopant
implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate) alleviates the
polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude. The offset
voltage drift with time has been calculated to be typically 0.1 µV/month, including the first month of operation.
Because of the extremely high input impedance and resulting low bias current requirements, the TLC271 is well
suited for low-level signal processing; however, leakage currents on printed circuit boards and sockets can
easily exceed bias current requirements and cause a degradation in device performance. It is good practice to
include guard rings around inputs (similar to those of Figure 101 in the Parameter Measurement Information
section). These guards should be driven from a low-impedance source at the same voltage level as the
common-mode input (see Figure 107).
The inputs of any unused amplifiers should be tied to ground to avoid possible oscillation.
noise performance
The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage
differential amplifier. The low input bias current requirements of the TLC271 results in a very low noise current,
which is insignificant in most applications. This feature makes the devices especially favorable over bipolar
devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices exhibit greater noise
currents.
–
–
–
V
I
V
O
V
O
V
O
+
+
+
V
I
V
I
(a) NONINVERTING AMPLIFIER
(b) INVERTING AMPLIFIER
(c) UNITY-GAIN AMPLIFIER
Figure 107. Guard-Ring Schemes
59
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION
feedback
Operational amplifier circuits almost always
–
employ feedback, and since feedback is the first
prerequisite for oscillation, a little caution is
appropriate. Most oscillation problems result from
driving capacitive loads and ignoring stray input
capacitance. A small-value capacitor connected
in parallel with the feedback resistor is an effective
remedy (see Figure 108). The value of this
capacitor is optimized empirically.
V
O
+
Figure 108. Compensation for Input
Capacitance
electrostatic discharge protection
The TLC271 incorporates an internal electrostatic-discharge (ESD) protection circuit that prevents functional
failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2. Care should be exercised,
however, when handling these devices as exposure to ESD may result in the degradation of the device
parametric performance. The protection circuit also causes the input bias currents to be temperature dependent
and have the characteristics of a reverse-biased diode.
latch-up
Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLC271 inputs
and output were designed to withstand –100-mA surge currents without sustaining latchup; however,
techniques should be used to reduce the chance of latch-up whenever possible. Internal protection diodes
should not by design be forward biased. Applied input and output voltage should not exceed the supply voltage
by more than 300 mV. Care should be exercised when using capacitive coupling on pulse generators. Supply
transients should be shunted by the use of decoupling capacitors (0.1 µF typical) located across the supply rails
as close to the device as possible.
The current path established if latch-up occurs is usually between the positive supply rail and ground and can
be triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supply
voltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and the
forward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance of
latch-up occurring increases with increasing temperature and supply voltages.
output characteristics
2.5 V
The output stage of the TLC271 is designed to
sink and source relatively high amounts of current
–
(see Typical Characteristics). If the output is
subjected to a short-circuit condition, this high
current capability can cause device damage
undercertainconditions. Outputcurrentcapability
increases with supply voltage.
V
O
+
V
I
T = 25°C
A
f = 1 kHz
V
C
L
= 1 V
I(PP)
– 2.5 V
Figure 109. Test Circuit for Output
Characteristics
60
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION
output characteristics (continued)
All operating characteristics of the TLC271 were measured using a 20-pF load. The devices drive higher
capacitive loads; however, as output load capacitance increases, the resulting response pole occurs at lower
frequencies, thereby causing ringing, peaking, or even oscillation (see Figures 110, 111, and 112). In many
cases, adding some compensation in the form of a series resistor in the feedback loop alleviates the problem.
(a) C = 20 pF, R = NO LOAD
(b) C = 130 pF, R = NO LOAD
L L
(c) C = 150 pF, R = NO LOAD
L
L
L
L
Figure 110. Effect of Capacitive Loads in High-Bias Mode
(a) C = 20 pF, R = NO LOAD
(b) C = 170 pF, R = NO LOAD
L L
(c) C = 190 pF, R = NO LOAD
L
L
L
L
Figure 111. Effect of Capacitive Loads in Medium-Bias Mode
(a) C = 20 pF, R = NO LOAD
(b) C = 260 pF, R = NO LOAD
(c) C = 310 pF, R = NO LOAD
L L
L
L
L
L
Figure 112. Effect of Capacitive Loads in Low-Bias Mode
61
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION
output characteristics (continued)
Although the TLC271 possesses excellent high-level output voltage and current capability, methods are
available for boosting this capability, if needed. The simplest method involves the use of a pullup resistor (R )
P
connected from the output to the positive supply rail (see Figure 113). There are two disadvantages to the use
of this circuit. First, the NMOS pulldown transistor, N4 (see equivalent schematic) must sink a comparatively
large amount of current. In this circuit, N4 behaves like a linear resistor with an on-resistance between
approximately 60 Ω and 180 Ω, depending on how hard the operational amplifier input is driven. With very low
values of R , a voltage offset from 0 V at the output occurs. Secondly, pullup resistor RP acts as a drain load
P
to N4 and the gain of the operational amplifier is reduced at output voltage levels where N5 is not supplying the
output current.
V
DD
R
–
V
I
P
I
I
P
V
–V
DD
I
O
I
R
P
I
F
L
P
V
O
+
I
P
= Pullup current required
by the operational amplifier
F
(typically 500 µA)
R2
I
L
R1
R
L
Figure 113. Resistive Pullup to Increase V
OH
10 kΩ
10 kΩ
0.016 µF
0.016 µF
5 V
10 kΩ
–
V
I
5 V
10 kΩ
–
TLC271
+
5 V
10 kΩ
BIAS SELECT
–
TLC271
+
BIAS SELECT
TLC271
+
Low Pass
BIAS SELECT
High Pass
Band Pass
5 kΩ
R = 5 kΩ(3/d-1)
(see Note A)
NOTE B: d = damping factor, I/O
Figure 114. State-Variable Filter
62
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION
output characteristics (continued)
V
O
(see Note A)
9 V
C = 0.1 µF
9 V
10 kΩ
10 kΩ
–
9 V
100 kΩ
R2
–
TLC271
+
V
O
(see Note B)
BIAS
SELECT
TLC271
+
BIAS SELECT
1
R1
F
O
4C(R2) R3
R1, 100 kΩ
R3, 47 kΩ
NOTES: A.
B.
V
V
= 8 V
= 4 V
O(PP)
O(PP)
Figure 115. Single-Supply Function Generator
63
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION (HIGH-BIAS MODE)
5 V
–
V
I–
10 kΩ
100 kΩ
TLC271
+
BIAS
SELECT
5 V
–5 V
–
TLC271
V
O
+
BIAS
SELECT
10 kΩ
5 V
–5 V
95 kΩ
–
10 kΩ
TLC271
+
V
I+
BIAS SELECT
R1, 10 kΩ
(see Note A)
–5 V
NOTE A: CMRR adjustment must be noninductive.
Figure 116. Low-Power Instrumentation Amplifier
5 V
–
R
R
V
O
TLC271
+
10 MΩ
10 MΩ
V
I
BIAS SELECT
2C
540 pF
1
fNOTCH
2 RC
R/2
5 MΩ
C
C
270 pF
270 pF
Figure 117. Single-Supply Twin-T Notch Filter
64
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION (HIGH-BIAS MODE)
V
I
(see Note A)
1.2 kΩ
20 kΩ
0.47 µF
100 kΩ
4.7 kΩ
0.1 µF
–
TL431
1 kΩ
TIP31
TLC271
+
15 Ω
BIAS SELECT
TIS 193
+
250 µF,
25 V
V
O
–
(see Note B)
10 kΩ
47 kΩ
22 kΩ
110 Ω
0.01 µF
NOTES: A. V = 3.5 to 15 V
I
O
B.
V
= 2.0 V, 0 to 1 A
Figure 118. Logic-Array Power Supply
12 V
12 V
–
V
I
H.P.
5082-2835
–
TLC271
+
BIAS
SELECT
TLC271
+
V
O
BIAS
SELECT
0.5 µF
Mylar
N.O.
Reset
100 kΩ
Figure 119. Positive-Peak Detector
65
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION (MEDIUM-BIAS MODE)
1N4148
470 kΩ
100 kΩ
5 V
–
47 kΩ
TLC271
+
V
O
100 kΩ
BIAS
SELECT
2.5 V
R2
68 kΩ
100 kΩ
1 µF
C2
2.2 nF
R1
68 kΩ
C1
2.2 nF
NOTES: A.
B.
V
= 2 V
O(PP)
1
f
o
2
R1R2C1C2
Figure 120. Wein Oscillator
5 V
1 MΩ
0.01 µF
–
V
I
0.22 µF
V
O
TLC271
+
BIAS
SELECT
2.5 V
100 kΩ
1 MΩ
100 kΩ
10 kΩ
0.1 µF
Figure 121. Single-Supply AC Amplifier
66
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION (MEDIUM-BIAS MODE)
5 V
Gain Control
1 MΩ
(see Note A)
1 µF
100 kΩ
–
+
–
1 µF
10 kΩ
+
–
0.1 µF
TLC271
+
–
+
BIAS
SELECT
1 kΩ
100 kΩ
2.5 V
100 kΩ
NOTE A: Low to medium impedance dynamic mike
Figure 122. Microphone Preamplifier
10 MΩ
V
DD
V
–
DD
1 kΩ
–
TLC271
+
V
O
TLC271
+
BIAS
SELECT
BIAS
SELECT
/2
V
REF
V
/2
DD
15 nF
V
DD
150 pF
100 kΩ
NOTES: A. NOTES: V
= 4 V to 15 V
–2 V
DD
DD
= 0 V to V
B.
V
ref
Figure 123. Photo-Diode Amplifier With Ambient Light Rejection
5 V
I
S
V
I
+
TLC271
–
BIAS
SELECT
2N3821
2.5 V
R
NOTES: A. V = 0 V TO 3 V
I
V
I
I
B.
S
R
Figure 124. Precision Low-Current Sink
67
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION (LOW-BIAS MODE)
V
DD
+
BIAS SELECT
V
I
TLC271
V
I
–
V
DD
90 kΩ
C
S1
S2
X1
B
1
2
TLC4066
A
C
1
Select
S
S
2
1
9 kΩ
1 kΩ
X2
B
A
V
10
100
Analog
Switch
A
2
NOTE A: V
= 5 V to 12 V
DD
Figure 125. Amplifier With Digital Gain Selection
5 V
+
BIAS SELECT
TLC271
500 kΩ
V
O1
–
5 V
500 kΩ
BIAS
SELECT
+
V
O2
TLC271
–
0.1 µF
500 kΩ
500 kΩ
Figure 126. Multivibrator
68
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
APPLICATION INFORMATION (LOW-BIAS MODE)
10 kΩ
V
DD
20 kΩ
BIAS SELECT
+
V
I
V
O
TLC271
–
100 kΩ
NOTE A: V
= 5 V to 16 V
DD
Figure 127. Full-Wave Rectifier
10 kΩ
V
DD
100 kΩ
100 kΩ
BIAS
SELECT
+
Set
TLC271
–
Reset
33 Ω
NOTE A: V
= 5 V to 16 V
DD
Figure 128. Set/Reset Flip-Flop
0.016 µF
5 V
10 kΩ
10 kΩ
BIAS
SELECT
+
V
I
V
O
TLC271
0.016 µF
–
NOTE A: Normalized to F = 1 kHz and R = 10 kΩ
C
L
Figure 129. Two-Pole Low-Pass Butterworth Filter
69
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PACKAGE OPTION ADDENDUM
www.ti.com
26-Aug-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TLC271ACD
TLC271ACDR
TLC271ACP
TLC271ACPS
TLC271ACPSR
TLC271AID
ACTIVE
SOIC
SOIC
PDIP
SO
D
D
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
N / A for Pkg Type
0 to 70
0 to 70
271AC
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
2500
50
Green (RoHS
& no Sb/Br)
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
271AC
P
Green (RoHS
& no Sb/Br)
0 to 70
TLC271ACP
P271A
PS
PS
D
80
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
N / A for Pkg Type
0 to 70
SO
2000
75
Green (RoHS
& no Sb/Br)
0 to 70
P271A
SOIC
SOIC
SOIC
PDIP
SOIC
SOIC
SOIC
PDIP
SO
Green (RoHS
& no Sb/Br)
-40 to 85
-40 to 85
-40 to 85
-40 to 85
0 to 70
271AI
TLC271AIDG4
TLC271AIDR
TLC271AIP
D
75
Green (RoHS
& no Sb/Br)
271AI
D
2500
50
Green (RoHS
& no Sb/Br)
271AI
P
Green (RoHS
& no Sb/Br)
TLC271AIP
271BC
TLC271BCD
TLC271BCDG4
TLC271BCDR
TLC271BCP
TLC271BCPS
TLC271BID
D
75
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
N / A for Pkg Type
D
75
Green (RoHS
& no Sb/Br)
0 to 70
271BC
D
2500
50
Green (RoHS
& no Sb/Br)
0 to 70
271BC
P
Green (RoHS
& no Sb/Br)
0 to 70
TLC271BCP
P271B
PS
D
80
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
0 to 70
SOIC
SOIC
75
Green (RoHS
& no Sb/Br)
-40 to 85
-40 to 85
271BI
TLC271BIDG4
D
75
Green (RoHS
& no Sb/Br)
271BI
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
26-Aug-2020
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
2500
50
(1)
(2)
(3)
(4/5)
(6)
TLC271BIDR
TLC271BIP
ACTIVE
SOIC
PDIP
SOIC
SOIC
SOIC
PDIP
SO
D
P
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
N / A for Pkg Type
-40 to 85
-40 to 85
0 to 70
271BI
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Green (RoHS
& no Sb/Br)
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
TLC271BIP
271C
TLC271CD
D
75
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
N / A for Pkg Type
TLC271CDR
TLC271CDRG4
TLC271CP
D
2500
2500
50
Green (RoHS
& no Sb/Br)
0 to 70
271C
D
Green (RoHS
& no Sb/Br)
0 to 70
271C
P
Green (RoHS
& no Sb/Br)
0 to 70
TLC271CP
P271
TLC271CPS
TLC271CPSR
TLC271CPW
TLC271CPWR
TLC271CPWRG4
TLC271ID
PS
PS
PW
PW
PW
D
80
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
N / A for Pkg Type
0 to 70
SO
2000
150
2000
2000
75
Green (RoHS
& no Sb/Br)
0 to 70
P271
TSSOP
TSSOP
TSSOP
SOIC
SOIC
SOIC
PDIP
SOIC
SOIC
Green (RoHS
& no Sb/Br)
0 to 70
P271
Green (RoHS
& no Sb/Br)
0 to 70
P271
Green (RoHS
& no Sb/Br)
0 to 70
P271
Green (RoHS
& no Sb/Br)
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-55 to 125
-55 to 125
271I
TLC271IDR
D
2500
2500
50
Green (RoHS
& no Sb/Br)
271I
TLC271IDRG4
TLC271IP
D
Green (RoHS
& no Sb/Br)
271I
P
Green (RoHS
& no Sb/Br)
TLC271IP
271M
TLC271MDR
TLC271MDRG4
D
2500
2500
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
Level-1-260C-UNLIM
D
Green (RoHS
& no Sb/Br)
271M
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com
26-Aug-2020
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Feb-2019
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TLC271ACDR
TLC271ACPSR
TLC271AIDR
TLC271BCDR
TLC271BIDR
TLC271CDR
TLC271CPWR
TLC271IDR
SOIC
SO
D
PS
D
8
8
8
8
8
8
8
8
8
2500
2000
2500
2500
2500
2500
2000
2500
2500
330.0
330.0
330.0
330.0
330.0
330.0
330.0
330.0
330.0
12.4
16.4
12.4
12.4
12.4
12.4
12.4
12.4
12.4
6.4
8.35
6.4
6.4
6.4
6.4
7.0
6.4
6.4
5.2
6.6
5.2
5.2
5.2
5.2
3.6
5.2
5.2
2.1
2.5
2.1
2.1
2.1
2.1
1.6
2.1
2.1
8.0
12.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
12.0
16.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
SOIC
SOIC
SOIC
SOIC
TSSOP
SOIC
SOIC
D
D
D
PW
D
TLC271MDR
D
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Feb-2019
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TLC271ACDR
TLC271ACPSR
TLC271AIDR
TLC271BCDR
TLC271BIDR
TLC271CDR
TLC271CPWR
TLC271IDR
SOIC
SO
D
PS
D
8
8
8
8
8
8
8
8
8
2500
2000
2500
2500
2500
2500
2000
2500
2500
340.5
367.0
340.5
340.5
340.5
340.5
367.0
340.5
350.0
338.1
367.0
338.1
338.1
338.1
338.1
367.0
338.1
350.0
20.6
38.0
20.6
20.6
20.6
20.6
35.0
20.6
43.0
SOIC
SOIC
SOIC
SOIC
TSSOP
SOIC
SOIC
D
D
D
PW
D
TLC271MDR
D
Pack Materials-Page 2
PACKAGE OUTLINE
D0008A
SOIC - 1.75 mm max height
SCALE 2.800
SMALL OUTLINE INTEGRATED CIRCUIT
C
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A
PIN 1 ID AREA
6X .050
[1.27]
8
1
2X
.189-.197
[4.81-5.00]
NOTE 3
.150
[3.81]
4X (0 -15 )
4
5
8X .012-.020
[0.31-0.51]
B
.150-.157
[3.81-3.98]
NOTE 4
.069 MAX
[1.75]
.010 [0.25]
C A B
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
[0.11-0.25]
0 - 8
.016-.050
[0.41-1.27]
DETAIL A
TYPICAL
(.041)
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
www.ti.com
EXAMPLE BOARD LAYOUT
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
SEE
DETAILS
1
8
8X (.024)
[0.6]
SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
EXPOSED
METAL
EXPOSED
METAL
.0028 MAX
[0.07]
.0028 MIN
[0.07]
ALL AROUND
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
1
8
8X (.024)
[0.6]
SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
PACKAGE OUTLINE
PW0008A
TSSOP - 1.2 mm max height
S
C
A
L
E
2
.
8
0
0
SMALL OUTLINE PACKAGE
C
6.6
6.2
SEATING PLANE
TYP
PIN 1 ID
AREA
A
0.1 C
6X 0.65
8
5
1
3.1
2.9
NOTE 3
2X
1.95
4
0.30
0.19
8X
4.5
4.3
1.2 MAX
B
0.1
C A
B
NOTE 4
(0.15) TYP
SEE DETAIL A
0.25
GAGE PLANE
0.15
0.05
0.75
0.50
0 - 8
DETAIL A
TYPICAL
4221848/A 02/2015
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-153, variation AA.
www.ti.com
EXAMPLE BOARD LAYOUT
PW0008A
TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
8X (1.5)
SYMM
8X (0.45)
(R0.05)
1
4
TYP
8
SYMM
6X (0.65)
5
(5.8)
LAND PATTERN EXAMPLE
SCALE:10X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
0.05 MAX
ALL AROUND
0.05 MIN
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
NOT TO SCALE
4221848/A 02/2015
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
PW0008A
TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
8X (1.5)
SYMM
(R0.05) TYP
8X (0.45)
1
4
8
SYMM
6X (0.65)
5
(5.8)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:10X
4221848/A 02/2015
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you
permission to use these resources only for development of an application that uses the TI products described in the resource. Other
reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third
party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims,
damages, costs, losses, and liabilities arising out of your use of these resources.
TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on
ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable
warranties or warranty disclaimers for TI products.
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2020, Texas Instruments Incorporated
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