TLS24306 [TI]
IC,READ/WRITE CIRCUIT,6-CHANNEL,BICMOS,TSSOP,38PIN,PLASTIC;
| 型号： | TLS24306 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | IC,READ/WRITE CIRCUIT,6-CHANNEL,BICMOS,TSSOP,38PIN,PLASTIC 信息通信管理 光电二极管 |
| 文件： | 总23页 (文件大小：483K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
Current-Bias/Current-Sense Architecture
Multichannel Servo Write:
– Upper or Lower Half Channels
– Every Two Channels
– All Channels
Fabricated Using LinIMPACT-C BiCMOS
Technology
Operates From a Single 5-V Supply (±10%)
Read-Fault (RUS), Write-Fault (WUS), and
Idle-Fault (IUS) Detection
Low-Power Idle Mode
Single-Ended Input to Reader With One
Side Grounded
MR-Head Open Protection and MR-Head
Short Detection Available (Metal Option,
Disabled)
True Differential Read Output
Wide Magnetoresistive (MR) Resistor
Thermal-Asperity Detection Available
(Metal Option, Disabled)
[R
] Range From 10 Ω to 40 Ω
(MR)
MR-Head Bias Current [I
Programmable From 7 mA to 17 mA
]
I(BIAS)
Pseudo-ECL (PECL) Differential-Write-Data
(WDX and WDY) Inputs
Buffered-Head-Voltage [V ] Monitor
(BH)
Write Data Divided-by-2 (FF) Circuit
Available (Metal Option, Disabled)
Gain: 230 V/V at R
Bandwidth:
= 20 Ω
(MR)
Channel Separation 70 dBa at f = 25 MHz
– 65 MHz at –1 dB [R
– 140 MHz at –3 dB [R
= 20 Ω]
(MR)
Power-Supply Rejection Ratio (PSRR)
50 dB at 25 MHz (Input Referred)
= 20 Ω]
(MR)
Equivalent Input Noise = 0.55 nV/√Hz at
= 20 Ω
MR Bias On During Write Mode; Otherwise,
Programmable On/Off
R
(MR)
Write-Head Current Programmable
From 10 mA to 35 mA (Base to Peak)
Input Control Lines:
– Head Select HS (2 Channel) or
HS0 – HS2 (6 Channel) With Internal
Pullup Resistors
Write-Current Rise/Fall Time = 3.7 ns
– L
(Head Only) = 180 nH
I(TF)
– R/W With Internal Pullup Resistor
– CS With Internal Pullup Resistor
– BHV/IBON With Internal Pulldown
Resistor
– R
= 15 Ω, L
= 25 mA
= 50 nH
I(TF)
(lead)
– I
I(W)
Fast Recovery Times:
– Write to Read = 0.8 µs (BHV/IBON = L)
– Read to Write = 50 ns
Packaged in 30-Pin (2 Channel) and 38-Pin
(6 Channel) Plastic TSSOP Packages
Output Capacitance = 8.5 pF for Write
Optimized for Package-On-Arm
Applications
PART NUMBER
DESCRIPTION
PACKAGE TYPE
TLS24302
TLS24306
2-channel magnetoresistive/thin-film read/write preamplifier
6-channel magnetoresistive/thin-film read/write preamplifier
Plastic 30 pin (DBT)
Plastic 38 pin (DBT)
description
The TLS24302 and TLS24306 are read/write BiCMOS preamplifiers designed for use with magnetoresistive
(MR)/thin-film (TF) recording heads. The MR element is used for reading and the inductive thin-film section of
the head is used for writing. The preamplifiers implement a current-bias/current-sense architecture. Both have
a single-ended read input with a fully differential read (RDX, RDY) output that operates from a single 5-V supply.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinIMPACT-C is a trademark of Texas Instruments Incorporated.
Copyright 1995, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
description (continued)
The write-head current I
and MR-head bias current I
are programmable using external resistors.
I(W)
I(BIAS)
Recovery time is reduced by holding BHV/IBON low during the write mode. Multichannel servo write is achieved
by taking FLT/SE higher than V
operating frequencies.
by at least 1.2 V. An optional booster circuit can be used to achieve higher
CC
A fault terminal (FLT/SE) goes low when the WDX/WDY input frequency is low, a head is shorted or open, there
is no write current (Ix or Iy), or if V is low. Additionally, the preamplifiers provide an optional thermal-asperity
CC
detection circuit that can be enabled by using an optional metal mask during the fabrication process.
Table 1 lists the functions that can be changed by a custom metal mask during the fabrication process. Contact
your local Texas Instruments (TI) sales office or representative for further information.
The standard device and optional functions are defined as follows:
Table 1. Optional Functions Available
CIRCUIT FUNCTION
MR-head open fault detection
MR-head short fault detection
Thermal-asperity fault detection
Flip-flop
STANDARD DEVICE
CUSTOMIZED DEVICE
Optional
Optional
All disabled
Optional
Optional
Booster circuit
Optional
Gain
230 V/V at R
= 20 Ω
Optional
(MR)
Differential output resistance
400 Ω (typ)
Optional
The TSSOP packages optimize the preamplifiers for package-on-arm applications.
pin assignments
TLS24302
DBT PACKAGE
(TOP VIEW)
TLS24306
DBT PACKAGE
(TOP VIEW)
RCS
WCS
HS
WDX
WDY
1
NC
NC
RCS
WCS
HS0
HS1
HS2
1
R5X
W5Y
W5X
W4X
W4Y
R4X
GND
R3X
CAP1
W3Y
W3X
W2X
W2Y
R2X
GND
R1X
W1Y
W1X
R0X
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
2
2
3
W1X
W1Y
R1X
GND
CAP1
NC
3
4
4
5
5
V
6
WDX
WDY
6
CC
BHV/IBON
GND
7
7
8
V
8
CC
RDY
RDX
FLT/SE
R/W
CS
CAP2H
CAP2L
9
NC
NC
BHV/IBON
9
10
11
12
13
14
15
GND
RDY
RDX
FLT/SE
R/W
10
11
12
13
14
15
16
17
18
19
GND
R0X
W0Y
W0X
NC
CS
CAP2H
CAP2L
W0Y
W0X
NC – No internal connection
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
TLS24302 functional block diagram
FLT/SE
11
V
6
GND
CC
8, 20, 25
Reference
Voltage
Read Inputs and
Write Drivers
7
Fault
BHV/IBON
Indicator
R/W1
26
R1X
(V
REF
)
12
Mode
Select
R/W
CS
27
28
W1Y
W1X
+
–
T/A
S/H
13
(options) (options)
10
9
RDX
RDY
Booster
Amp
(option)
R/W0
19
3
R0X
2
Head
Select
HS
18
17
W0Y
W0X
+
–
4
5
WDX
WDY
Fault Indicator
14
CAP2H
Voltage-
Fault
Indicator
Write-
Current
Source
15
CAP2L
MR-Bias-
Current
Source
24
CAP1
2
1
WCS
RCS
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
TLS24306 functional block diagram
Read Inputs and
Write Drivers
FLT/SE
13
V
8
GND
CC
R/W5
10, 24, 32
38
R5X
37
36
Reference
Voltage
+
–
W5Y
W5X
9
Fault
BHV/IBON
R/W
Indicator
33
34
35
R/W4
(V
REF
)
R4X
14
15
Mode
Select
W4Y
T/A
S/H
W4X
(options) (options)
CS
31
29
28
R/W3
R/W2
12
11
R3X
RDX
RDY
W3Y
Booster
(option)
Amp
W3X
3
HS0
25
26
27
R2X
6
4
5
Head
Select
W2Y
HS1
HS2
W2X
23
22
21
R/W1
R/W0
6
7
R1X
WDX
WDY
W1Y
W1X
Fault Indicator
20
18
19
R0X
Voltage-
Write-
Current
Source
Fault
W0Y
Indicator
MR-Bias-
Current
Source
W0X
16
CAP2H
2
1
17
WCS
RCS
CAP2L
30
CAP1
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
TLS24302 Terminal Functions
TERMINAL
NAME
I/O
DESCRIPTION
NO.
Read mode. Buffered-head-voltage (BHV) monitor (amplified by 5×).
Write mode. MR-head bias current on (IBON) during write.
BHV/IBON
7
I/O
CAP1
24
14
15
Capacitor 1. Decoupling capacitor for MR-bias-current feedback amplifier.
Capacitor 2H. High side of single-to-differential reference decoupling capacitor.
Capacitor 2L. Low side of single-to-differential reference decoupling capacitor.
CAP2H
CAP2L
I
CS
13
Chip select. High input selects idle mode.
(CMOS)
Fault detection/servo enable. FLT/SE low indicates WDX/WDY frequency low, head short or
FLT/SE
11
I/O
open, no write current, thermal asperity detected, or low V . When FLT/SE = V
CC
servo-write heads are turned on for multiwrite mode.
+ 1.2 V, both
CC
GND
HS
8, 20, 25
3
Ground
I
Head select. Selects one of two heads.
No internal connection
(CMOS)
16, 21, 22,
23, 29, 30
NC
I
R/W
12
Read/write select. A high-level input selects read mode; a low-level input selects write mode.
(CMOS)
R0X
19
26
1
I
I
X-head connection. MR element positive single-ended input.
X-head connection. MR element positive single-ended input.
Read-current set. Used to set the magnitude of the read-current bias.
Read data. Differential read-data outputs.
R1X
RCS
I
RDX, RDY
10, 9
6
O
V
CC
Supply voltage
W0X
W0Y
W1X
W1Y
WCS
17
18
28
27
2
O
O
O
O
I
X-head connection. TF write-section positive differential output.
Y-head connection. TF write-section negative differential output.
X-head connection. TF write-section positive differential output.
Y-head connection. TF write-section negative differential output.
Write-current set. Used to set the magnitude of the write-current bias.
I
WDX, WDY
4, 5
Write data. Psuedo ECL, differential write-data inputs.
(PECL)
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
TLS24306 Terminal Functions
TERMINAL
I/O
DESCRIPTION
NAME
NO.
Read mode. Buffered-head-voltage (BHV) monitor (amplified by 5×).
Write mode. MR-head bias current on (IBON) during write.
BHV/IBON
9
I/O
CAP1
30
16
17
Capacitor 1. Decoupling capacitor for MR-bias-current feedback amplifier.
Capacitor 2H. High side of single-to-differential reference decoupling capacitor.
Capacitor 2L. Low side of single-to-differential reference decoupling capacitor.
CAP2H
CAP2L
I
CS
15
Chip select. High input selects idle mode.
(CMOS)
Fault detection/servo enable. FLT/SE low indicates WDX/WDY frequency low, head short or
FLT/SE
GND
13
I/O
open, no write current, thermal asperity detected, or low V . When FLT/SE = V
CC
+ 1.2 V, 2, 3,
CC
or 6 servo-write heads are turned on for multiwrite mode.
10, 24, 32
3, 4, 5
Ground
HS0, HS1,
HS2
I
Head select. Selects up to six heads. During servo-write mode, selects two, three, or six heads.
Read/write select. A high-level input selects read mode; a low-level input selects write mode.
(CMOS)
I
R/W
14
(CMOS)
R0X
20
23
25
31
33
38
1
I
I
X-head connection. MR element positive single-ended input.
X-head connection. MR element positive single-ended input.
X-head connection. MR element positive single-ended input.
X-head connection. MR element positive single-ended input.
X-head connection. MR element positive single-ended input.
X-head connection. MR element positive single-ended input.
Read current set. Used to set the magnitude of the read-current bias.
Read data. Differential read-data outputs.
R1X
R2X
I
R3X
I
R4X
I
R5X
I
RCS
RDX, RDY
I
12, 11
8
O
V
CC
Supply voltage
W0X
W0Y
W1X
W1Y
W2X
W2Y
W3X
W3Y
W4X
W4Y
W5X
W5Y
WCS
19
18
21
22
27
26
28
29
35
34
36
37
2
O
O
O
O
O
O
O
O
O
O
O
O
I
X-head connection. TF write-section positive differential output.
Y-head connection. TF write-section negative differential output.
X-head connection. TF write-section positive differential output.
Y-head connection. TF write-section negative differential output.
X-head connection. TF write-section positive differential output.
Y-head connection. TF write-section negative differential output.
X-head connection. TF write-section positive differential output.
Y-head connection. TF write-section negative differential output.
X-head connection. TF write-section positive differential output.
Y-head connection. TF write-section negative differential output.
X-head connection. TF write-section positive differential output.
Y-head connection. TF write-section negative differential output.
Write-current set. Used to set the magnitude of the write-current bias.
I
WDX, WDY
6, 7
Write data. Psuedo ECL, positive differential write-data inputs.
(PECL)
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 6 V
CC
Input voltage range, V : Digital . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to V
+ 0.3 V
I
CC
FLT/SE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 8 V
MR head . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 1.5 V
Write-head output voltage range, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to V
+ 0.3 V
O
CC
Write current, I
, base to peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 mA
I(W)
MR-head-bias current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 mA
Low-level output current, I , at RDX or RDY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 mA
OL
High-level output current, I , at FLT/SE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 mA
OH
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
A
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 150°C
stg
Operating virtual junction temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
J
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to GND.
DISSIPATION RATING TABLE
≤ 25°C DERATING FACTOR
T
A
T = 70°C
A
POWER RATING
PACKAGE
POWER RATING
ABOVE T = 25°C
A
DBT (30 pin)
DBT (38 pin)
875 mW
7 mW/°C
560 mW
925 mW
7.4 mW/°C
592 mW
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
recommended operating conditions
MIN
NOM
MAX
UNIT
V
Supply voltage
4.5
5
5.5
V
CC
IH
Digital
CMOS
FLT/SE
PECL
Digital
CMOS
PECL
0.8V
V
CC
CC
0.8V
CC
V
High-level input voltage
V
V
+1.2
CC
V
CC
–1.62
0
V
CC
0.2V
0.2V
CC
V
V
Low-level input voltage
V
IL
CC
V
CC
–2.65
180
7
V
–0.1
CC
550
MR-sensor voltage
I
R
(MR)
320
16
mV
mA
mA
kΩ
Ω
I(MR)
I(BIAS)
I(W)
(MR)
I
I
MR-sensor bias current
TF head write current
17
35
10
†
R
R
R
Load resistance
1
L
MR-sensor resistance
10
20
15
40
(MR)
I(TF)
TF write-head resistance
Pullup resistor from FLT to V
Ω
2.4
4.7
50
kΩ
kΩ
nH
nH
CC
Pullup resistor from SE to 12 V
L
L
Total differential inductance at input of preamplifier (twisted leads)
TF write-head inductance
60
65
(lead)
I(TF)
I(W)
180
f
Write-data input frequency range
Rise time/fall time of WDX or WDY
Operating free-air temperature
1
MHz
ns
t , t
r f
2
T
A
0
25
25
70
130
150
°C
Idle, read, and write modes
T
J
Operating virtual junction temperature
°C
‡
Servo-bank write mode
†
‡
Differential load resistance seen at RDX/RDY of preamplifier
Servo-bank write mode must be ≤1 hour under continuous operation.
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
electrical characteristics over recommended free-air temperature range, V
= 5 V,
CC
for R
f
= 20 Ω, I
= 40 MHz
= 16 mA, R
= 15 Ω, L
= 180 nH, L
= 50 nH, I
= 25 mA,
(MR)
I(BIAS)
I(TF)
I(TF)
(lead)
I(W)
I(W)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Read mode
52
62
BHV/IBON = L
See equation (1) or (2)
See equation (3) or (4)
See equation (5) or (6)
9
Write mode
I
Supply current
BHV/IBON = H
mA
CC
Servo mode
Idle mode
12
341
Read mode
260
See equations (1) and (7)
or (2) and (8)
BHV/IBON = L
BHV/IBON = H
Write mode, See Note 2
See equations (3) and (7)
or (4) and (8)
P
D
Power dissipation
mW
Servo mode,
See Notes 2 and 3
See equations (5) and (7)
or (6) and (8)
Idle mode, See Note 2
45
72
NOTES: 2. For applications requiring idle-to-write or servo-write switching, TI recommends that these switches be made while BHV/IBON is
high. Using this technique avoids a potential 20-mA increase.
3. During servo-write operation, TLS24302 or TLS24306 must operate such that the total power is less than the package power
dissipation limit. See principles of operation, servo write mode.
Equation (1) is used to calculate typical supply current and equation (2) is used to calculate maximum supply
current when BHV/IBON is low.
ICC (typ)
1.2
II(W)
1.1
II(BIAS)
28
(1)
(2)
I
CC (max)
1.2
II(W)
1.1
II(BIAS)
42
Equation (3) is used to calculate typical supply current and equation (4) is used to calculate maximum supply
current when BHV/IBON is high.
ICC (typ)
1.2
II(W)
20
(3)
(4)
ICC (max)
1.2
II(W)
30
Equation (5) is used to calculate typical supply current and equation (6) is used to calculate maximum supply
current when the preamplifier is operating in the servo mode.
ICC (typ)
1.2
(II(W)
number of heads turned on)
20
(5)
(6)
I
CC (max)
1.2
(II(W)
number of heads turned on)
30
Equation (7) is used to calculate typical power dissipation and equation (8) is used to calculate maximum supply
current when the preamplifier is in the servo mode.
PD (typ)
PD (max)
Where:
ICC(typ)
VCC (typ)
(7)
(8)
ICC(max)
VCC (max)
Numerical current values are in mA.
I
I
supply current is in mA.
CC
write current is in mA.
I(W)
P power dissipation is in mW.
D
V
V
(typ) = 5 V
CC
CC
(max) = 5.5 V
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
electrical characteristics over recommended free-air temperature range, V
PECL (unless otherwise noted)
= 5 V for CMOS and
CC
PARAMETER
Low-level output voltage at FLT/SE
High-level output current at FLT/SE
TEST CONDITIONS
= 2 mA
O
MIN
TYP MAX
UNIT
V
V
I
0.5
20
OL
I
V
O
= V
CC
µA
OH
†
BHV/IBON (with pulldown resistor ) (CMOS)
V
IH
= 4 V
400
650
µA
CS, HS or HS0–HS2, R/W (with pullup
resistor ) (CMOS)
V
IH
= 4 V
–160 –100
1
µA
†
I
IH
High-level input current
FLT/SE
mA
WDX or WDY (PECL)
Vin = V
CC
100
µA
CS, HS or HS0–HS2, R/W (with pullup
resistor ) (CMOS)
V
= 1 V
–650 –400
100
µA
IL
IL
†
†
I
IL
Low-level input current BHV/IBON (with pulldown resistor )
(CMOS)
V
= 1 V
160
20
µA
µA
WDX or WDY (PECL)
Vin = V –2.65
CC
†
Internal pullup and pulldown resistors are nominally 6.5 kΩ to 15 kΩ.
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
electrical characteristics over recommended free-air temperature range (unless otherwise noted),
read mode, V
= 5 V, R
= 10 Ω to 40 Ω, I
= 7 mA to 17 mA, T = 25°C, C1 = 0.022 µF,
CC
(MR)
I(BIAS) A
C2 = 0.01 µF, L
= 50 nH (see Figure 1)
(lead)
PARAMETER
Setting voltage, bias current
Selected head
TEST CONDITIONS
MIN
TYP
2
MAX UNIT
V
V
I(BC)
I(MR)
I
= 16 mA, R
= 20 Ω
(MR)
320
0
336
I(BIAS)
Unselected head
50
V
MR-bias voltage
mV
During H/S
(transient)
0
550
Preamplifier output
voltage at RDX and
RDY
Read mode
V
CC
–2.2
V
V
O(RD)
†
Other than read mode
V
V
V
Output offset voltage Read mode
–200
0
0.55
1.6
200
0.68
1.7
mV
OO
Input noise voltage
See Note 4
R
= 20 Ω,
f = 1 to 50 MHz
nV Hz
V
I(noise)
I(BH)
(MR)
Voltage, buffered head
V
I(BH)
= V
× 5(20 Ω/16 mA)
1.5
1
I(MR)
THD ≤ –40 dB at 5 MHz,
Dynamic range
1.5
mV
R
R
R
R
R
= 20 Ω
= 10 Ω
= 20 Ω
= 30 Ω
= 40 Ω
(MR)
(MR)
(MR)
(MR)
(MR)
320
195
137
104
19
393
230
161
123
20
464
265
186
142
G
G
Gain, differential voltage
V/V
(D)
Gain, bias current-to-MR-head current
Output current
21 A/A
mA
(BIAS – MR)
I
O
1.5
Bias current leakage,
Read/write mode
unselected head
I
–10
–5
10
µA
lkg
MR-bias current tolerance
Low frequency (–3 dB)
5
%
0.22
65
0.42
V = 500 µV,
R
= 20 Ω,
(MR)
I
BW
Bandwidth
High frequency (–1 dB)
High frequency (–3 dB)
Selected head
55
MHz
L
= 0 nH
(lead)
100
140
r
r
Input resistance
R
= 20 Ω,
I 16 mA
I(BIAS) =
2.3
50
5.5
Ω
Ω
i
(MR)
Differential output
resistance
Read mode
f = 20 MHz
o(D)
Power supply input-referred noise-rejection
ratio
f = 1 MHz to 25 MHz,
V = 100 mV
PSRR
SP
43
50
dB
dB
ns
I
p-p
f = 1 MHz to 25 MHz
f = 26 MHz to 65 MHz
10 MHz to 65 MHz,
60
45
70
55
Channel separation
t
d
Delay time, range of group
0.8
R
= 20 Ω,
L
= 0 nH
(MR)
(lead)
†
High impedance (Hi-Z)
NOTE 4: connected at input of preamplifier. Noise due to R
R
is not included.
(MR)
(MR)
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
electrical characteristics over recommended free-air temperature range (unless otherwise noted),
write mode, I
= 10 mA to 35 mA, R
=15 Ω, L
= 180 nH, T = 25°C, f
= 1 MHz to 65 MHz
I(W)
I(TF)
I(TF)
A
I(W)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
V
V
V
Differential output voltage swing (peak to peak)
Voltage, write current
Open head
6.8
7.5
2
O(D)
V
I(WC)
G
Gain, write current
20
5%
A/A
(W)
TF-write-current tolerance
–5%
320
r
Differential output resistance
Differential output capacitance
Unselected head impedance
400
8.5
480
12
Ω
pF
Ω
o(D)
c
o(D)
Z
(UH)
150
250
switching characteristics over recommended supply voltage and operating free-air temperature
ranges, R = 20 Ω, I = 16 mA, I = 25 mA, C1 = 0.022 µF, C2 = 0.01 µF, L =180 nH,
(MR)
= 15 Ω, L
I(BIAS)
I(W)
I(TF)
R
= 50 nH, amplitude of RDX/RDY = 150 mV
I(TF)
(lead)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Settling time, head-to-head
switch-to-read
R
R
= 15 Ω to 25 Ω, and
= 25 Ω to 15 Ω
(MR)
(MR)
t
t
14
20
µs
s(HSR)
BHV/IBON = L
BHV/IBON = H
0.8
14
14
2.5
20
20
µs
µs
µs
To 30 mV of read DC
Settling time, write-to-read switch
Settling time, idle-to-read switch
s(WR)
t
t
s(IR)
Settling time, head-to-head
switch-to-write
50
100
ns
s(HSW)
To 90% of write current
t
t
t
t
Settling time, read-to-write switch
Settling time, idle-to-write switch
Delay time, read-to-idle switch
Delay time, write-to-idle switch
Rise and fall times, write current
50
60
100
200
0.5
ns
ns
µs
ns
ns
s(RW)
s(IW)
d(RI)
To 10% of read envelope
To 10% of write current
0.1
30
100
4.5
d(WI)
t , t
r f
I
= 25 mA
3.7
I(W)
50% of WDX/WDY to
50% of Ix/Iy
t
Propagation delay time, PECL
To write current
11
20
ns
ns
pd
∆t
pd
Propagation delay time, differential WDX to Ix or WDY to Iy
0.5
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
fault switching
Fault-switching characteristics are provided using the following assumptions:
•
•
If the nongrounded side of the MR sensor becomes grounded, the head voltage diminishes due to a
decrease in the head resistance. This condition should be reported and prevented.
If the MR-sensor voltage rises to the thermal-asperity threshold, the voltage across the MR stripe rises
rapidly. This condition should be reported as a fault.
For a complete listing of optional functions see Table 1.
fault-electrical characteristics, L
= 180 nH, R
= 15 Ω, f
= 1 MHz to 65 MHz,
I(TF)
I(TF)
I(W)
I
= 7 mA to 17 mA, R
= 10 Ω to 40 Ω, C = 12 pF, V = 0.5 V
I(BIAS)
(MR) L IT CC
PARAMETER
TEST CONDITIONS
Fault detected
MIN
3.6
TYP
3.8
4.1
50
MAX
4.0
UNIT
V
V
hys
Low V
threshold voltage (hysteresis)
CC
Fault removed
Fault detected
Fault detected
3.9
4.3
V
V
V
MR-head short threshold voltage
MR-head open threshold voltage
mV
mV
IT(short)
750
IT(open)
Thermal-asperity detect threshold
voltage, base to peak
R
= 20 Ω, I = 16 mA measured at
I(BIAS)
(MR)
V
IT
390
460
530
mV
RDX/RDY
fault-switching characteristics, L
= 180 nH, R
= 15 Ω, f
= 1 MHz to 65 MHz,
I(TF)
I(TF)
I(W)
I
= 7 mA to 17 mA, R
= 10 Ω to 40 Ω, C = 12 pF, V = 0.5 V
I(BIAS)
(MR)
L
IT
CC
PARAMETER
TEST CONDITIONS
MIN
TYP
0.1
MAX
0.2
UNIT
µs
Safe to unsafe
Unsafe to safe
t
t
Transition time, thermal-asperity detect
Frequency, WDX/WDY for safe condition
0.2
0.4
µs
f
1
MHz
µs
(WDX/WDY)
t
Safe to unsafe
Unsafe to safe
0.6
2.0
3.6
1.1
2.6
Transition time, WDX/WDY frequency low
detect
µs
t
FF disabled
FF enabled
µs
1000 pF
RDX
2.2 kΩ
Measurement
Point
2.2 kΩ
1000 pF
RDY
Figure 1. Read-Output-Measurement Circuit
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
PRINCIPLES OF OPERATION
The TLS24302 and TLS24306 addresses channels with logic control inputs that are CMOS compatible. For the
TLS24306, mode selection is indicated in Table 2 and head selection is indicated in Table 3. When using the
TLS24302, only heads 0 and 1 are selected. All control lines are pulled up/down internally to force the device
into a nonwrite mode in case of open input.
Table 2. Mode Select (see Note 5)
MODE SELECT
CS
0
R/W
0
BHV/IBON
FLT/SE
WUS
Write mode
1
0
Write mode, MR bias on
Servo write mode
Read mode
0
0
WUS
0
0
X
X
X
V
+1.2 V
CC
RUS
IUS
0
1
Idle mode
1
X
NOTE 5: Mode-select terminals, except FLT/SE, are pulled up internally. BHV/IBON is pulled
down.
Table 3. Head Select (see Note 6)
HEAD SELECTED
HS2
0
HS1
0
HS0
0
0
1
2
3
4
5
1
4
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
NOTE 6: HS2, HS1, and HS0 are available in the TLS24306 only and all are pulled up
internally. The TLS24302 has one head select (HS) terminal and it is pulled up
internally.
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
PRINCIPLES OF OPERATION
write mode
Taking both CS and R/W low activates the write mode. The head select inputs HS0–HS2 (HS for TLS24302)
select the appropriate head. In the write mode, the circuit acts as a current switch with write current toggled
between the X and Y directions of the thin-film selection of the selected head. Write current is toggled on each
transition of WDX or WDY. When WDX is at a higher potential than WDY, thin-film Y connection is at a higher
potential than thin-film X connection. When the metal option flip-flop is enabled, the write current is toggled on
the rising edge of WDX/WDY and a preceding idle or read mode initializes the write data flip-flop to pass write
current from the Y side to the X side of the head.
The relationships of WDX/WDY and WUS with flip-flop disabled and flip-flop enabled are illustrated in Figure 2
and Figure 3.
WDX–WDY
WUS
Ix–Iy (FF)
Figure 2. Write-Mode Timing Diagram (Flip-Flop Disabled)
WDX–WDY
WUS
Ix–Iy (FF)
Figure 3. Write-Mode Timing Diagram (Flip-Flop Enabled)
The base-to-peak (0-p) magnitude of the write current [I
] is determined by the following formula:
I(W)
VWC
RWC
KW
RWC
II(W)
GW
(9)
Where:
G
K
is the write-current gain in A/A.
is the TF-write current constant of 40 V.
is a resistor connected from WCS to GND.
W
W
R
WC
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
PRINCIPLES OF OPERATION
write mode (continued)
Actual head current (I
) is determined by the following formula:
head
II(W)
Ihead
R
head
(10)
1
R
damp
Where:
I
is the write current in mA.
I(W)
R
R
is the damping resistance in Ω.
is the head resistance in Ω.
damp
head
During read mode, TI recommends that WDX or WDY have a potential 2.5 V and that WDX and WDY have
a differential voltage 100 mV. The differential voltage can be set to zero during the idle mode.
write mode with MR-head bias current on
Taking CS, R/W, and BHV/IBON low activates the write mode with MR-head bias current on. In this mode, the
bias current on the MR head selected by HS0–HS2 (HS for TLS24302) is instrumental in performing fast
recovery-to-read mode.
servo write mode
Taking CS and R/W low and FLT/SE to
V
+1.2 V activates the servo write mode. In this mode, the same
CC
data is written to several heads. TI recommends that a pullup resistor of 4.7 kΩ be connected to FLT/SE to
ensure that the maximum allowable FLT/SE voltage is not exceeded during the servo mode when the applied
voltage is 12 V. In the servo mode, the same data is written to the selected heads as shown in Table 4 and
Table 5.
Table 4. TLS24302 Servo Write-Head Select
HEAD SELECTED
HS
0
0, 1
0, 1
1
Table 5. TLS24306 Servo Write-Head Select
HEAD SELECTED
HS2
0
HS1
0
HS0
0
0, 1
2, 3
0
0
1
4, 5
0
1
0
1, 3, 5
0, 2, 4
0, 1, 2, 3, 4, 5
1, 4
0
1
1
1
0
0
1
0
1
1
1
X
During servo write for all channels, V
prevent exceeding the power dissipation limit of the package. Continuous operations in the servo write mode
and/or write current must be set lower than normal writing mode to
CC
must be limited to 1 hour. Recommended operating room temperature is 25°C.
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
PRINCIPLES OF OPERATION
read mode
Taking CS low and R/W high activates the read mode. In the read mode, the feedback loop maintains a constant
MR-bias current having a long duration. Its constant is determined by a capacitor from CAP1 to GND. According
to these characteristics, the device acts as a transimpedance converter. In case of increasing R
reading signal, output potential changes as the potential of RDX becomes higher than RDY.
by the
(MR)
The magnitude of MR-bias current [I
] is set by the following formula:
I(BIAS)
VRC
RRC
Kb
RRC
II(BIAS)
G(BIAS – MR)
(11)
Where:
G
is the MR-bias-current gain in A/A.
(BIAS – MR)
K is the I
current constant of 40 V.
I(BIAS)
b
R
V
is a resistor connected from RCS to GND.
RC
RC
is the voltage across R
.
RC
buffered-head voltage
The preamplifiers have a buffered-head voltage (BHV) circuit that is brought out on BHV/IBON. The BHV
function monitors the MR-head voltage and includes an amplifier that boosts the head signal by up to five times
the actual signal level. As BHV is shared with IBON, the head voltage can be monitored during read modes.
idle mode
The idle mode is activated by taking CS high. The internal write-current source, and read-output buffer are
deactivated. The MR-bias-current source is active, but the bias current flows through internal dummy load
resistors instead of the MR element to allow fast recovery to read. The fault indicator is active in all states.
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
PRINCIPLES OF OPERATION
fault mode
TI recommends that a 2.4-k pullup resistor to V be connected to FLT/SE, which is an open-collector output.
CC
During write mode, FLT is valid after one low-to-high transition of WDX/WDY following the required read-write
transition time. RDX and RDY are in a high-impedance state during all fault-mode occurrences except when
an MR-head short occurs. For all fault modes except WDX/WDY frequency low, one transition of WDX/WDY
isrequiredtoclearFLTafterremovingthefaultcondition. TheWDX/WDYfrequencylow-faultdetectoriscleared
when two consecutive positive transitions of WDX/WDY meet the minimum frequency for the flip-flop disabled
device or the detection of three consecutive positive transitions that meet the minimum frequency for the flip-flop
enabled device. Table 6 summarizes the fault conditions.
Table 6. Fault Conditions
†
Mode
Safe
Fault Conditions
FLT/SE
MR head open
MR head short
Read
High
Low
Thermal-asperity detect
Low V
CC
WDX/WDY frequency low
Head short to ground
Head open
Write
Idle
High
High
Low
Low
No write current
Low V
Low V
CC
CC
†
RDX and RDY are in the high-impedance state for all fault-mode occurrences.
The write-current and read-bias-current sources remain activated during any fault mode, but the driver circuit
controlling I and I has a shunt circuit that reduces I and I to zero.
I(BIAS)
I(BIAS)
I(W)
I(W)
For a complete listing of optional functions see Table 1.
MR-head short detection
The voltage comparator is presented at the input stage to protect MR from head short. The preamplifier stays
in the active mode and only FLT reports this fault.
MR head open protection
The voltage comparator is presented at the input stage to protect MR from head open. The preamplifier goes
to a pseudo-idle mode until the fault is cleared, after which either taking CS high or selecting another functional
head resets the preamplifier.
18
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
PRINCIPLES OF OPERATION
thermal-asperity detection
To detect thermal asperity, a DC comparator connected to the input of the booster amplifier is presented. The
device acknowledges V(RDX/RDY) > 460-mV MR-head read signal as thermal asperity and responds by:
a) Disabling RDX/RDY output buffers to avoid disturbing the next read channel
b) Reporting fault in read mode
Release timing is extended 100 ns from the end point of thermal-asperity detection.
The device behavior for thermal-asperity detection is shown in Figure 4.
Thermal-Asperity
MR-Head
Detection Threshold
V
IT
Read Signal
I
100 ns
100 ns
OE
(internal)
Hi Z
Hi Z
RDX/RDY
FLT/SE
Figure 4. Thermal-Asperity Detection
19
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
PRINCIPLES OF OPERATION
All the normal and fault modes and the possible states are illustrated in Figure 5.
6
1
7
10
WRITE FLT
IDLE FLT
IDLE MODE
READ FLT Latch
Low V
CS = H
CS = H
R/W = L
CS = L
CS = H
CC
CS
R/W = H
CS = L
IBON = H
R/W = L
FLT = L
R/W = H
R/W = L
FLT = H
R/W = H
MR Head Short (Metal Option)
FLT = L
FLT = L
MR Head Open
HS Change
CS
l
l
= Hi Z
= P.D.
l
l
= Hi Z
= P.D.
l
l
= Hi Z
l
l
= Hi Z
I(BIAS)
I(BIAS)
I(W)
I(BIAS)
I(BIAS)
= P.D.
= P.D.
I(W)
I(W)
I(W)
H/S
H/S
11
3
2
8
WRITE FLT
WRITE MODE
READ MODE
READ FLT
Low V
CC
R/W = L
CS = L
R/W = L
CS = L
R/W = H
CS = L
R/W = H
CS = H
IBON = H
IBON = H
Low V
Head Short to GND
R/W
R/W
CC
FLT = H
Low Frequency
Head Open
No Write Current
FLT = L
FLT = L
FLT = H
l
= ON
l
= Hi Z
l
l
= Hi Z
= Hi Z
I(BIAS)
l
l
= Hi Z
I(BIAS)
I(BIAS)
I(W)
I(BIAS)
= ON
l
= P.D.
l
= P.D.
I(W)
I(W)
I(W)
Low V
9
12
CC
IBON
WRITE FLT
V
+ 1.2 V
CC
R/W = L
CS = L
IBON = H
READ FLT
H/S
R/W = H
CS = L
4
5
FLT = L
Thermal Asperity
(Metal Option)
l
l
= Hi Z
I(BIAS)
= ON
SERVO WRITE MODE
R/W = L
IBON = H
WRITE (W/IBON)
R/W = L
IBON = L
FLT = L
= ON
I(BIAS)
= P.D.
I(W)
CS = L
CS = L
l
l
I(W)
FLT = SE
FLT = H
l
l
= Hi Z
l
l
= ON
I(BIAS)
= ON
I(BIAS)
= ON
I(W)
I(W)
Low V
Head Short
to GND
Low Frequency
No Write Current
CC
13
14
15
WRITE FLT
WRITE FLT
WRITE FLT
R/W = L
CS = L
R/W = L
CS = L
R/W = L
CS = L
IBON = L
IBON = L
IBON = L
FLT = L
FLT = L
FLT = L
l
l
= Hi Z
l
l
= Hi Z
l
l
= ON
I(BIAS)
= P.D.
I(BIAS)
= Hi Z
I(BIAS)
= ON
P.D. = Pulled down
I(W)
I(W)
I(W)
Figure 5. All-States Diagram (Normal Mode and Fault Mode)
20
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
APPLICATION INFORMATION
R1
1.6 kΩ
± 1%
R2
2.5 kΩ
± 1%
GND Plane
RCS
WCS
NC
NC
1
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
2
3
W1X
W1Y
R1X
R1Y
HS
WDX
WDY
4
5
GND
CAP1
NC
V
CC
6
7
BHV/IBON
GND
C1, 0.022 µF,
± 20%
8
NC
NC
C4, 0.1 µF, +80%/–20%
9
RDY
RDX
10
11
12
13
14
15
GND
FLT/SE
R/W
R0Y
R0X
CS
W0Y
W0X
CAP2H
C2, 0.01 µF,
NC
± 20%
CAP2L
Figure 6. TLS24302 Application
R5Y
R3Y
R1Y
R1
1.6 kΩ
± 1%
R2
2.5 kΩ
± 1%
GND Plane
R0Y
RCS
WCS
1
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
R5X
W5Y
2
3
W5X
W4X
W4Y
R4X
R4Y
R3X
HS0
HS1
HS2
4
5
6
WDX
WDY
GND
7
V
CC
8
CAP1
9
BHV/IBON
GND
C1, 0.022 µF, ± 20%
10
11
12
13
14
15
16
17
18
19
W3Y
C4, 0.1 µF, +80%/–20%
W3X
W2X
RDY
RDX
FLT/SE
R/W
W2Y
R2X
GND
R2Y
R1X
W1Y
W1X
R0X
CS
CAP2H
C2, 0.01 µF,
± 20%
CAP2L
W0Y
W0X
Figure 7. TLS24306 Application
21
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLS24302, TLS24306
2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM
READ/WRITE PREAMPLIFIERS
SQHS007A – DECEMBER 8, 1995 – REVISED DECEMBER 15, 1995
MECHANICAL DATA
DBT (R-PDSO-G**)
PLASTIC THIN SHRINK SMALL-OUTLINE PACKAGE
30 PIN SHOWN
PINS **
30
38
DIM
0,30
0,15
8,10
7,70
10,00
9,60
A MAX
0,50
30
M
0,10
16
A MIN
0,15 NOM
4,70
4,30
6,70
6,10
Gage Plane
0,25
1
15
0°–10°
0,60
0,40
A
Seating Plane
0,10
1,20 MAX
0,05 MIN
4073252/A 09/95
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions include mold flash or protrusion.
22
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor
product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
TI warrants performance of its semiconductor products and related software to the specifications applicable at
the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are
utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each
device is not necessarily performed, except those mandated by government requirements.
Certain applications using semiconductor products may involve potential risks of death, personal injury, or
severe property or environmental damage (“Critical Applications”).
TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED
TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS.
Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI
products in such applications requires the written approval of an appropriate TI officer. Questions concerning
potential risk applications should be directed to TI through a local SC sales office.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards should be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance, customer product design, software performance, or
infringement of patents or services described herein. Nor does TI warrant or represent that any license, either
express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property
right of TI covering or relating to any combination, machine, or process in which such semiconductor products
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Copyright 1996, Texas Instruments Incorporated
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