TLV2231IDBVTR [TI]
OP-AMP, 3000uV OFFSET-MAX, 1.9MHz BAND WIDTH, PDSO5;
| 型号： | TLV2231IDBVTR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | OP-AMP, 3000uV OFFSET-MAX, 1.9MHz BAND WIDTH, PDSO5 运算放大器 |
| 文件： | 总27页 (文件大小：584K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
DBV PACKAGE
(TOP VIEW)
Output Swing Includes Both Supply Rails
Low Noise . . . 15 nV/√Hz Typ at f = 1 kHz
Low Input Bias Current . . . 1 pA Typ
IN+
1
2
3
5
4
V
DD+
Fully Specified for Single-Supply 3-V and
5-V Operation
V
DD–
/GND
IN–
Common-Mode Input Voltage Range
Includes Negative Rail
OUT
High Gain Bandwidth . . . 2 MHz at
V
= 5 V with 600 Ω Load
DD
High Slew Rate . . . 1.6 V/µs at V
= 5 V
DD
Wide Supply Voltage Range
2.7 V to 10 V
Macromodel Included
description
The TLV2231 is a single low-voltage operational amplifier available in the SOT-23 package. It offers 2 MHz of
bandwidth and 1.6 V/µs of slew rate for applications requiring good ac performance. The device exhibits
rail-to-rail output performance for increased dynamic range in single or split supply applications. The TLV2231
is fully characterized at 3 V and 5 V and is optimized for low-voltage applications.
The TLV2231, exhibiting high input impedance and low noise, is excellent for small-signal conditioning of
high-impedance sources, such as piezoelectric transducers. Because of the micropower dissipation levels
combined with 3-V operation, these devices work well in hand-held monitoring and remote-sensing
applications. In addition, the rail-to-rail output feature with single- or split-supplies makes this family a great
choice when interfacing with analog-to-digital converters (ADCs). The device can also drive 600-Ω loads for
telecom applications.
2
With a total area of 5.6mm , the SOT-23 package only requires one-third the board space of the standard 8-pin
SOIC package. This ultra-small package allows designers to place single amplifiers very close to the signal
source, minimizing noise pick-up from long PCB traces. TI has also taken special care to provide a pinout that
is optimized for board layout (see Figure 1). Both inputs are separated by GND to prevent coupling or leakage
paths. The OUT and IN– terminals are on the same end of the board for providing negative feedback. Finally,
gain setting resistors and decoupling capacitor are easily placed around the package.
1
4
V
I
IN+
V
DD+
V+
C
2
3
GND
V
/GND
DD
R
I
5
IN–
OUT
V
O
R
F
Figure 1. Typical Surface Mount Layout for a Fixed-Gain Noninverting Amplifier
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
Copyright 1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
AVAILABLE OPTIONS
CHIP
FORM
(Y)
PACKAGED DEVICES
‡
T
A
V
IO
max AT 25°C
SYMBOL
†
SOT-23 (DBV)
0°C to 70°C
3 mV
3 mV
TLV2231CDBV
TLV2231IDBV
VAEC
VAEI
TLV2231Y
–40°C to 85°C
†
‡
The DBV package available in tape and reel only.
Chip forms are tested at T = 25°C only.
A
TLV2231Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2231C. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
(4)
V
DD+
(5)
(3)
(1)
(3)
+
IN+
IN–
(4)
OUT
–
(2)
V
DD–
/GND
40
(2)
CHIP THICKNESS: 10 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
T max = 150°C
J
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (2) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
(1)
(5)
32
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
equivalent schematic
V
DD+
Q3
Q6
Q9
Q12
Q14
Q16
R7
C2
IN+
R6
OUT
C1
IN–
R5
Q1
Q4
Q13
Q15
R2
Q17
D1
Q2
R3
Q5
R4
Q7
Q8
Q10
Q11
R1
V
DD–/GND
†
COMPONENT COUNT
Transistors
Diodes
23
5
Resistors
Capacitors
11
2
†
Includes both amplifiers and all
ESD, bias, and trim circuitry
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 V
DD
Differential input voltage, V (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±V
Input voltage range, V (any input, see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to V
ID
DD
DD
I
Input current, I (each input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5 mA
I
Output current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±50 mA
O
Total current into V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±50 mA
DD+
DD–
Total current out of V
Duration of short-circuit current (at or below) 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . unlimited
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, T : TLV2231C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
A
TLV2231I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 85°C
Storage temperature range, T
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: DBV package . . . . . . . . . . . . . . . . . . 260°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
stg
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to V
.
DD –
2. Differential voltages are at the noninverting input with respect to the inverting input. Excessive current flows when input is brought
below V – 0.3 V.
DD–
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded.
DISSIPATION RATING TABLE
T
≤ 25°C
DERATING FACTOR
T
= 70°C
T = 85°C
A
POWER RATING
A
A
PACKAGE
POWER RATING
ABOVE T = 25°C
POWER RATING
A
DBV
150 mW
1.2 mW/°C
96 mW
78 mW
recommended operating conditions
TLV2231C
TLV2231I
UNIT
MIN
MAX
MIN
MAX
10
–1.3
Supply voltage, V
2.7
10
2.7
V
V
DD
Input voltage range, V
V
V
V
V
–1.3
V
V
V
V
I
DD–
DD+
DD–
DD+
Common-mode input voltage, V
IC
Operating free-air temperature, T
–1.3
–1.3
V
DD–
0
DD+
DD–
–40
DD+
70
85
°C
A
NOTE 1: All voltage values, except differential voltages, are with respect to V
DD –
.
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
electrical characteristics at specified free-air temperature, V
= 3 V (unless otherwise noted)
DD
TLV2231C
TYP MAX
TLV2231I
TYP MAX
†
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
MIN
V
IO
Input offset voltage
0.75
3
0.75
3
mV
Temperature
coefficient of input
offset voltage
Full range
α
0.5
0.5
µV/°C
VIO
Input offset voltage
long-term drift
(see Note 4)
V
V
= ±1.5 V,
V
R
= 0,
= 50 Ω
S
DD±
= 0,
IC
25°C
0.003
0.5
0.003
0.5
µV/mo
O
25°C
Full range
25°C
I
I
Input offset current
Input bias current
pA
pA
IO
150
150
150
150
1
1
IB
Full range
0
to
2
–0.3
to
2.2
0
to
2
–0.3
to
2.2
25°C
Common-mode input
voltage range
V
ICR
R
= 50 Ω,
|V | ≤5 mV
IO
V
S
0
to
0
to
Full range
1.7
1.7
I
I
= –1 mA
= –2 mA
= 1.5 V,
= 1.5 V,
25°C
25°C
2.87
2.74
2.87
2.74
OH
High-level output
voltage
V
V
V
OH
OH
Full range
25°C
2
2
V
V
I
I
= 50 µA
10
10
IC
OL
Low-level output
voltage
25°C
100
100
mV
OL
= 500 µA
IC
OL
Full range
25°C
300
300
1
1.6
1
1.6
Large-signal
differential voltage
amplification
‡
= 600 Ω
R
R
V
V
= 1.5 V,
= 1 V to 2 V
L
L
IC
O
Full range
25°C
0.3
0.3
A
VD
V/mV
‡
250
250
= 1 MΩ
Differential input
resistance
12
10
12
10
Ω
Ω
r
r
25°C
25°C
25°C
25°C
id
Common-mode input
resistance
12
10
12
10
ic
Common-mode input
capacitance
c
z
f = 10 kHz
f = 1 MHz,
6
6
pF
Ω
ic
o
Closed-loop output
impedance
A
= 1
156
70
156
70
V
25°C
60
55
60
55
Common-mode
rejection ratio
V
IC
V
O
= 0 to 1.7 V,
= 1.5 V,
CMRR
dB
dB
µA
R
= 50 Ω
S
Full range
Supply voltage
rejection ratio
25°C
70
70
96
70
70
96
V
V
= 2.7 V to 8 V,
DD
IC
k
SVR
= V
/2,
No load
DD
Full range
(∆V
/∆V )
DD
IO
25°C
750 1200
1500
750 1200
1500
I
Supply current
V
O
= 1.5 V,
No load
DD
Full range
†
‡
Full range for the TLV2231C is 0°C to 70°C. Full range for the TLV2231I is – 40°C to 85°C.
Referenced to 1.5 V
NOTE 4: Typical values are based on the input offset voltage shift observed through 500 hours of operating life test at T = 150°C extrapolated
A
to T = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
A
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
operating characteristics at specified free-air temperature, V
= 3 V
DD
TLV2231C
TYP
TLV2231I
TYP MAX
†
PARAMETER
TEST CONDITIONS
UNIT
T
A
MIN
MAX MIN
25°C
0.75
1.25
0.75
1.25
Slew rate at unity
gain
‡
V
C
= 1.1 V to 1.9 V,
= 100 pF
R
= 600 Ω ,
L
O
L
SR
V/µs
Full
range
‡
0.5
0.5
f = 10 Hz
f = 1 kHz
25°C
25°C
105
16
105
16
Equivalent input
noise voltage
V
n
nV/√Hz
µV
Peak-to-peak
equivalent input
noise voltage
f = 0.1 Hz to 1 Hz
f = 0.1 Hz to 10 Hz
25°C
25°C
1.4
1.5
1.4
1.5
V
N(PP)
Equivalent input
noise current
I
25°C
25°C
0.6
0.6
fA/√Hz
n
V
= 1 V to 2 V,
A
= 1
0.285%
7.2%
0.285%
7.2%
O
V
f = 20 kHz,
R
‡
= 600 Ω
A
V
= 10
Total harmonic
distortion plus
noise
L
THD+N
A
V
= 1
0.014%
0.098%
0.13%
0.014%
0.098%
0.13%
V
O
= 1 V to 2 V,
A
V
= 10
= 100
25°C
f = 20 kHz,
§
R
= 600 Ω
L
A
V
‡
Gain-bandwidth
product
f = 10 kHz,
R
= 600 Ω ,
L
25°C
25°C
1.9
1.9
MHz
kHz
‡
C
= 100 pF
L
Maximum output-
swing bandwidth
V
R
= 1 V,
= 600 Ω ,
A
V
= 1,
O(PP)
L
B
OM
60
0.9
1.5
60
0.9
1.5
‡
‡
C = 100 pF
L
A
= –1,
V
To 0.1%
Step = 1 V to 2 V,
t
s
Settling time
25°C
µs
‡
‡
R
L
C
L
= 600 Ω ,
= 100 pF
To 0.01%
Phase margin at
unity gain
φ
m
25°C
25°C
50°
50°
‡
‡
R
= 600 Ω ,
C = 100 pF
L
L
Gain margin
8
8
dB
†
‡
§
Full range is –40°C to 85°C.
Referenced to 1.5 V
Referenced to 0 V
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
electrical characteristics at specified free-air temperature, V
= 5 V (unless otherwise noted)
DD
TLV2231C
TYP MAX
TLV2231I
TYP MAX
†
PARAMETER
TEST CONDITIONS
T
A
UNIT
MIN
MIN
V
IO
Input offset voltage
0.71
3
0.71
3
mV
Temperature
coefficient of input
offset voltage
Full range
α
0.5
0.5
µV/°C
VIO
Input offset voltage
long-term drift
(see Note 4)
V
V
= ±2.5 V,
V
R
= 0,
= 50 Ω
S
DD±
= 0,
IC
25°C
0.003
0.5
0.003
0.5
µV/mo
O
25°C
Full range
25°C
I
I
Input offset current
Input bias current
pA
pA
IO
150
150
150
150
1
1
IB
Full range
0
to
4
–0.3
to
4.2
0
to
4
–0.3
to
4.2
25°C
Common-mode input
voltage range
V
ICR
R
= 50 Ω,
|V | ≤5 mV
IO
V
S
0
to
0
to
Full range
3.7
3.7
I
I
= –1 mA
= –4 mA
= 2.5 V,
= 2.5 V,
25°C
25°C
4.9
4.6
4.9
4.6
OH
High-level output
voltage
V
V
V
OH
OH
Full range
25°C
4
4
V
V
I
I
= 500 µA
80
80
IC
OL
Low-level output
voltage
25°C
160
160
mV
OL
= 1 mA
IC
OL
Full range
25°C
500
500
1
1.5
1
1.5
Large-signal
differential voltage
amplification
‡
= 600 Ω
R
R
V
V
= 2.5 V,
= 1 V to 4 V
L
L
IC
O
Full range
25°C
0.3
0.3
A
VD
V/mV
‡
400
400
= 1 MΩ
Differential input
resistance
12
10
12
10
Ω
Ω
r
r
25°C
25°C
25°C
25°C
id
Common-mode input
resistance
12
10
12
10
ic
Common-mode input
capacitance
c
z
f = 10 kHz
f = 1 MHz,
6
6
pF
Ω
ic
o
Closed-loop output
impedance
A
= 1
138
70
138
70
V
25°C
60
55
60
55
Common-mode
rejection ratio
V
IC
V
O
= 0 to 2.7 V,
= 2.5 V,
CMRR
dB
dB
µA
R
= 50 Ω
S
Full range
Supply voltage
rejection ratio
25°C
70
70
96
70
70
96
V
V
= 4.4 V to 8 V,
DD
IC
k
SVR
= V
/2,
No load
DD
Full range
(∆V
/∆V )
DD
IO
25°C
850 1300
1600
850 1300
1600
I
Supply current
V
O
= 2.5 V,
No load
DD
Full range
†
‡
Full range for the TLV2231C is 0°C to 70°C. Full range for the TLV2231I is – 40°C to 85°C.
Referenced to 2.5 V
NOTE 5: Typical values are based on the input offset voltage shift observed through 500 hours of operating life test at T = 150°C extrapolated
A
to T = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
A
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
operating characteristics at specified free-air temperature, V
= 5 V
DD
TLV2231C
TYP
TLV2231I
TYP MAX
†
PARAMETER
TEST CONDITIONS
UNIT
T
A
MIN
MAX MIN
25°C
1
1.6
1
1.6
‡
Slew rate at unity
gain
V
C
= 1.5 V to 3.5 V,
‡
= 100 pF
R
= 600 Ω ,
O
L
L
SR
V/µs
Full
range
0.7
0.7
f = 10 Hz
f = 1 kHz
25°C
25°C
100
15
100
15
Equivalent input
noise voltage
V
n
nV/√Hz
µV
Peak-to-peak
equivalent input
noise voltage
f = 0.1 Hz to 1 Hz
f = 0.1 Hz to 10 Hz
25°C
25°C
1.4
1.5
1.4
1.5
V
N(PP)
Equivalent input
noise current
I
25°C
25°C
0.6
0.6
fA/√Hz
n
V
= 1.5 V to 3.5 V,
A
= 1
0.409%
3.68%
0.409%
3.68%
O
V
f = 20 kHz,
R
‡
= 600 Ω
A
V
= 10
Total harmonic
distortion plus
noise
L
THD+N
A
V
= 1
0.018%
0.045%
0.116%
0.018%
0.045%
0.116%
V
O
= 1.5 V to 3.5 V,
A
V
= 10
= 100
25°C
f = 20 kHz,
§
R
= 600 Ω
L
A
V
‡
Gain-bandwidth
product
f = 10 kHz,
R
= 600 Ω ,
L
25°C
25°C
2
2
MHz
kHz
‡
C
= 100 pF
L
Maximum
output-swing
bandwidth
V
R
= 1 V,
= 600 Ω ,
A
V
= 1,
O(PP)
L
B
OM
300
300
‡
‡
C = 100 pF
L
A
= –1,
V
To 0.1%
0.95
2.4
0.95
2.4
Step = 1.5 V to 3.5 V,
R
C
t
s
Settling time
25°C
µs
‡
‡
= 600 Ω ,
= 100 pF
L
L
To 0.01%
Phase margin at
unity gain
φ
m
25°C
25°C
48°
48°
‡
‡
R
= 600 Ω ,
C = 100 pF
L
L
Gain margin
8
8
dB
†
‡
§
Full range is –40°C to 85°C.
Referenced to 2.5 V
Referenced to 0 V
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
electrical characteristics at V
= 3 V, T = 25°C (unless otherwise noted)
A
DD
TLV2231Y
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
750
0.5
1
MAX
V
IO
Input offset voltage
Input offset current
Input bias current
µV
pA
pA
V
R
± = ±1.5 V,
V
IC
= 0,
V = 0,
O
DD
S
I
IO
IB
= 50 Ω
I
–0.3
to
2.2
V
ICR
Common-mode input voltage range
|V | ≤5 mV,
IO
R
= 50 Ω
V
S
V
V
High-level output voltage
Low-level output voltage
I
= –1 mA
= 1.5 V,
= 1.5 V,
2.87
10
V
OH
OH
V
I
I
= 50 µA
IC
IC
OL
mV
OL
V
= 500 µA
100
1.6
OL
†
R
R
= 600 Ω
Large-signal differential voltage
amplification
L
L
A
VD
V
= 1 V to 2 V
V/mV
O
†
250
= 1 MΩ
12
r
r
Differential input resistance
10
10
Ω
Ω
id
12
Common-mode input resistance
Common-mode input capacitance
Closed-loop output impedance
Common-mode rejection ratio
Supply voltage rejection ratio
ic
c
z
f = 10 kHz
f = 1 MHz,
6
pF
Ω
ic
o
A
= 1
156
70
V
CMRR
V
V
V
= 0 to 1.7 V,
V
O
= 0,
R = 50 Ω
S
60
dB
IC
k
I
= 2.7 V to 8 V,
V
IC
= 0,
No load
96
dB
SVR
DD
(∆V
DD
/∆V )
IO
Supply current
= 0,
No load
750
µA
DD
O
†
Referenced to 1.5 V
electrical characteristics at V
= 5 V, T = 25°C (unless otherwise noted)
DD
A
TLV2231Y
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
710
0.5
1
MAX
V
IO
Input offset voltage
Input offset current
Input bias current
µV
pA
pA
V
R
± = ±1.5 V,
= 50 Ω
V
IC
= 0,
V = 0,
O
DD
S
I
I
IO
IB
–0.3
to
4.2
V
ICR
Common-mode input voltage range
|V | ≤5 mV,
IO
R
= 50 Ω
V
S
V
V
High-level output voltage
Low-level output voltage
I
= –1 mA
= 2.5 V,
= 2.5 V,
4.9
80
V
OH
OH
V
I
I
= 500 µA
IC
IC
OL
mV
OL
V
= 1 mA
160
15
OL
†
R
R
= 600 Ω
Large-signal differential voltage
amplification
L
L
A
VD
V
= 1 V to 2 V
V/mV
O
†
400
= 1 MΩ
12
r
r
Differential input resistance
10
10
Ω
Ω
id
12
Common-mode input resistance
Common-mode input capacitance
Closed-loop output impedance
Common-mode rejection ratio
Supply voltage rejection ratio
ic
c
z
f = 10 kHz
f = 1 MHz,
6
pF
Ω
ic
o
A
= 1
138
70
V
CMRR
V
V
V
= 0 to 1.7 V,
V
O
= 0,
R = 50 Ω
S
60
dB
IC
k
I
= 2.7 V to 8 V,
V
IC
= 0,
No load
96
dB
SVR
DD
(∆V
DD
/∆V )
IO
Supply current
= 0,
No load
850
µA
DD
O
†
Referenced to 2.5 V
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
Distribution
vs Common-mode input voltage
2, 3
4, 5
V
IO
Input offset voltage
α
Input offset voltage temperature coefficient
Input bias and input offset currents
Distribution
6, 7
8
VIO
I
/I
vs Free-air temperature
IB IO
vs Supply voltage
vs Free-air temperature
9
10
V
I
Input voltage
V
V
V
High-level output voltage
vs High-level output current
vs Low-level output current
vs Frequency
11, 14
12, 13, 15
16
OH
Low-level output voltage
OL
Maximum peak-to-peak output voltage
O(PP)
vs Supply voltage
vs Free-air temperature
17
18
I
Short-circuit output current
OS
V
Output voltage
vs Differential input voltage
vs Load resistance
19, 20
21
O
A
VD
Differential voltage amplification
vs Frequency
vs Free-air temperature
22, 23
24, 25
A
Large-signal differential voltage amplification
Output impedance
VD
o
z
vs Frequency
26, 27
vs Frequency
vs Free-air temperature
28
29
CMRR
Common-mode rejection ratio
vs Frequency
vs Free-air temperature
30, 31
32
k
Supply-voltage rejection ratio
Supply current
SVR
I
vs Supply voltage
33
DD
vs Load capacitance
vs Free-air temperature
34
35
SR
Slew rate
V
V
V
V
V
Inverting large-signal pulse response
Voltage-follower large-signal pulse response
Inverting small-signal pulse response
Voltage-follower small-signal pulse response
Equivalent input noise voltage
vs Time
36, 37
38, 39
40, 41
42, 43
44, 45
46
O
O
O
O
n
vs Time
vs Time
vs Time
vs Frequency
Over a 10-second period
vs Frequency
Noise voltage (referred to input)
THD + N
Total harmonic distortion plus noise
47
vs Free-air temperature
vs Supply voltage
48
49
Gain-bandwidth product
Gain margin
vs Load capacitance
50, 51
vs Frequency
vs Load capacitance
22, 23
52, 53
φ
m
Phase margin
B
1
Unity-gain bandwidth
vs Load capacitance
54, 55
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
DISTRIBUTION OF TLV2231
INPUT OFFSET VOLTAGE
DISTRIBUTION OF TLV2231
INPUT OFFSET VOLTAGE
20
18
20
18
380 Amplifiers From 1 Wafer Lot
380 Amplifiers From 1 Wafer Lot
V
T
= ±2.5 V
= 25°C
V
T
= ±1.5 V
= 25°C
DD
DD
A
A
16
14
16
14
12
10
8
12
10
8
6
6
4
4
2
2
0
–3
0
–3
–2
–1
0
1
2
3
–2
–1
0
1
2
3
V
IO
– Input Offset Voltage – mV
V
IO
– Input Offset Voltage – mV
Figure 2
Figure 3
†
†
INPUT OFFSET VOLTAGE
vs
INPUT OFFSET VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
COMMON-MODE INPUT VOLTAGE
1
1
V
= 5 V
= 50 Ω
= 25°C
V
= 3 V
= 50 Ω
= 25°C
DD
S
DD
S
0.8
0.8
R
T
R
T
A
A
0.6
0.4
0.2
0.6
0.4
0.2
0
–0.2
–0.4
0
–0.2
–0.4
–0.6
–0.8
–0.6
–0.8
–1
–1
–1
–1
0
1
2
3
0
1
2
3
4
5
V
IC
– Common-Mode Input Voltage – V
V
IC
– Common-Mode Input Voltage – V
Figure 4
Figure 5
†
For all curves where V
DD
= 5 V, all loads are referenced to 2.5 V. For all curves where V = 3 V, all loads are referenced to 1.5 V.
DD
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
DISTRIBUTION OF TLV2231 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
DISTRIBUTION OF TLV2231 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
†
†
30
25
20
15
10
5
30
25
20
15
10
5
32 Amplifiers From
1 Wafer Lots
32 Amplifiers From
1 Wafer Lots
V
= ±1.5 V
V
= ±2.5 V
DD±
P Package
= 25°C to 125°C
DD±
P Package
T = 25°C to 125°C
A
T
A
0
0
–4
–3 –2
–1
0
1
2
3
4
–4
–3 –2
–1
0
1
2
3
4
α
– Input Offset Voltage
α
VIO
– Input Offset Voltage
Temperature Coefficient – µV/°C
VIO
Temperature Coefficient – µV/°C
Figure 6
Figure 7
†
INPUT BIAS AND INPUT OFFSET CURRENTS
INPUT VOLTAGE
vs
vs
FREE-AIR TEMPERATURE
SUPPLY VOLTAGE
100
90
5
V
V
V
= ±2.5 V
= 0
= 0
= 50 Ω
R
T
= 50 Ω
= 25°C
DD±
IC
O
S
A
4
3
R
80
70
S
2
1
60
50
40
30
20
0
|V | ≤5 mV
IO
–1
–2
–3
–4
I
IB
I
IO
10
0
–5
1
1.5
2
2.5
3
3.5
4
25
45
65
85
105
125
T
A
– Free-Air Temperature – °C
|V | – Supply Voltage – V
DD±
Figure 8
Figure 9
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
†
†‡
INPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
HIGH-LEVEL OUTPUT CURRENT
3
2.5
2
5
4
3
2
1
V
= 3 V
DD
V
DD
= 5 V
T
A
= –40°C
T
A
= 25°C
|V | ≤5 mV
IO
1.5
1
T
A
= 85°C
T
A
= 125°C
0
0.5
0
–1
0
5
10
15
–55 –35 –15
5
25
45
65 85 105 125
T
A
– Free-Air Temperature – °C
|I | – High-Level Output Current – mA
OH
Figure 10
Figure 11
‡
†‡
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
LOW-LEVEL OUTPUT CURRENT
1.2
1
1.4
1.2
1
V
T
= 3 V
V
= 3 V
DD
DD
= 25°C
V
IC
= 1.5 V
A
T
A
= 125°C
V
IC
= 0
0.8
0.6
0.4
0.2
0
T
= 85°C
A
V
IC
= 0.75 V
0.8
0.6
T
= 25°C
A
V
= 1.5 V
IC
T
A
= – 40°C
0.4
0.2
0
0
1
2
3
4
5
0
1
2
3
4
5
I
– Low-Level Output Current – mA
I
– Low-Level Output Current – mA
OL
OL
Figure 12
Figure 13
†
‡
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where V = 5 V, all loads are referenced to 2.5 V. For all curves where V = 3 V, all loads are referenced to 1.5 V.
DD DD
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
†‡
†‡
LOW-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT CURRENT
5
4.5
4
1.4
1.2
V
V
= 5 V
V
= 5 V
DD
= 2.5 V
DD
IC
T
A
= 125°C
T
A
= –40°C
1
3.5
3
T
A
= 85°C
0.8
T
A
= 25°C
2.5
2
T
A
= 25°C
T
= 85°C
A
0.6
0.4
0.2
0
T
A
= –40°C
1.5
1
T
= 125°C
A
0.5
0
0
1
2
3
4
5
6
0
5
10
15
20
25
30
I
– Low-Level Output Current – mA
OL
|I | – High-Level Output Current – mA
OH
Figure 14
Figure 15
‡
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
SHORT-CIRCUIT OUTPUT CURRENT
vs
vs
FREQUENCY
SUPPLY VOLTAGE
5
30
25
R = 600 Ω
I
V
= V /2
DD
DD
= 25°C
O
IC
T
= 25°C
A
V
T
= V /2
20
A
4
V
DD
= 5 V
15
10
V
ID
= –100 mV
3
2
5
0
V
DD
= 3 V
–5
–10
–15
–20
V
ID
= 100 mV
1
0
–25
–30
2
3
4
5
6
10
10
10
10
10
2
3
4
5
6
7
8
f – Frequency – Hz
V
DD
– Supply Voltage – V
Figure 16
Figure 17
†
‡
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where V
= 5 V, all loads are referenced to 2.5 V. For all curves where V
= 3 V, all loads are referenced to 1.5 V.
DD
DD
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
†‡
SHORT-CIRCUIT OUTPUT CURRENT
‡
OUTPUT VOLTAGE
vs
vs
FREE-AIR TEMPERATURE
DIFFERENTIAL INPUT VOLTAGE
3
2.5
2
30
25
20
15
10
V
V
= 3 V
DD
= 1.5 V
V
V
V
= 5 V
= 2.5 V
= 2.5 V
DD
IC
O
IC
R = 600 Ω
T
A
I
= 25°C
V
ID
= –100 mV
5
0
1.5
1
–5
–10
V
= 100 mV
ID
–15
–20
–25
–30
0.5
0
–75 –50 –25
0
25
50
75
100
125
–10 –8 –6 –4 –2
0
2
4
6
8
10
‡
T
A
– Free-Air Temperature – °C
V
ID
– Differential Input Voltage – mV
Figure 18
Figure 19
‡
OUTPUT VOLTAGE
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
vs
DIFFERENTIAL INPUT VOLTAGE
LOAD RESISTANCE
5
4
3
4
3
2
1
10
10
10
10
V
T
A
= 2 V
O(PP)
= 25°C
V
V
R
= 5 V
DD
IC
L
= 2.5 V
= 600 Ω
= 25°C
T
A
V
DD
= 5 V
V
DD
= 3 V
2
1
0
1
1
10
2
3
10
0.1
1
10
–10 –8 –6 –4 –2
0
2
4
6
8
10
V
ID
– Differential Input Voltage – mV
R
– Load Resistance – kΩ
L
Figure 20
Figure 21
†
‡
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where V = 5 V, all loads are referenced to 2.5 V. For all curves where V = 3 V, all loads are referenced to 1.5 V.
DD DD
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
†
AMPLIFICATION AND PHASE MARGIN
vs
FREQUENCY
180°
135°
80
60
V
R
= 3 V
= 600 Ω
DD
L
L
C = 100 pF
T
A
= 25°C
90°
45°
40
Phase Margin
20
0
Gain
0°
–45°
–20
–40
–90°
7
4
5
6
10
10
10
10
f – Frequency – Hz
Figure 22
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
†
AMPLIFICATION AND PHASE MARGIN
vs
FREQUENCY
80
60
180°
135°
V
= 5 V
DD
R = 600 Ω
L
C = 100 pF
T
A
L
= 25°C
40
90°
45°
Phase Margin
20
0
Gain
0°
–45°
–20
–40
–90°
7
4
5
6
10
10
10
10
f – Frequency – Hz
Figure 23
†
For all curves where V
DD
= 5 V, all loads are referenced to 2.5 V. For all curves where V
= 3 V, all loads are referenced to 1.5 V.
DD
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION
vs
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION
vs
†‡
†‡
FREE-AIR TEMPERATURE
FREE-AIR TEMPERATURE
3
3
2
10
10
10
R
= 1 MΩ
L
R
= 1 MΩ
L
2
1
10
1
10
10
R
= 600 Ω
R
= 600 Ω
L
L
1
1
V
V
V
= 5 V
= 2.5 V
= 1 V to 4 V
DD
IC
O
V
V
V
= 3 V
= 1.5 V
= 0.5 V to 2.5 V
DD
IC
O
0.1
–75 –50 –25
0.1
–75
0
25
50
75
100 125
–50 –25
0
25
50
75
100 125
T
A
– Free-Air Temperature – °C
T
A
– Free-Air Temperature – °C
Figure 24
Figure 25
‡
OUTPUT IMPEDANCE
‡
OUTPUT IMPEDANCE
vs
vs
FREQUENCY
FREQUENCY
1000
100
10
1000
100
10
V
T
A
= 3 V
= 25°C
DD
V
T
A
= 5 V
= 25°C
DD
A
V
= 100
= 10
A
V
= 100
= 10
A
V
A
V
1
1
A
V
= 1
A
V
= 1
0.1
10
0.1
10
2
3
4
5
6
10
10
10
10
2
3
4
5
6
10
10
10
f– Frequency – Hz
10
f– Frequency – Hz
Figure 26
Figure 27
†
‡
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where V = 5 V, all loads are referenced to 2.5 V. For all curves where V = 3 V, all loads are referenced to 1.5 V.
DD DD
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
†‡
†
COMMON-MODE REJECTION RATIO
COMMON-MODE REJECTION RATIO
vs
vs
FREE-AIR TEMPERATURE
FREQUENCY
84
82
80
78
76
74
72
100
80
T
= 25°C
A
V
V
= 5 V
= 2.5 V
DD
IC
V
DD
= 5 V
V
V
= 3 V
= 1.5 V
DD
IC
60
40
20
0
V
DD
= 3 V
0
70
4
5
6
7
10
2
3
10
10
10
– 75 – 50 – 25
25
50
75 100 125
10
10
T
A
– Free-Air Temperature – °C
f – Frequency – Hz
Figure 28
Figure 29
†
†
SUPPLY-VOLTAGE REJECTION RATIO
SUPPLY-VOLTAGE REJECTION RATIO
vs
vs
FREQUENCY
FREQUENCY
100
100
80
V
T
A
= 3 V
DD
= 25°C
V
T
A
= 5 V
= 25°C
DD
80
60
40
k
SVR+
k
SVR+
60
40
k
SVR–
k
SVR–
20
0
20
0
2
3
4
5
6
7
10
6
7
10
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f – Frequency – Hz
f – Frequency – Hz
Figure 30
Figure 31
†
‡
For all curves where V
DD
= 5 V, all loads are referenced to 2.5 V. For all curves where V
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
= 3 V, all loads are referenced to 1.5 V.
DD
18
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
†
†
SUPPLY-VOLTAGE REJECTION RATIO
SUPPLY CURRENT
vs
vs
FREE-AIR TEMPERATURE
SUPPLY VOLTAGE
100
98
1000
750
V
= 0
O
V
V
= 2.7 V to 8 V
DD
= V = V /2
DD
T
A
= –40°C
No Load
IC
O
T
= 85°C
A
T
A
= 25°C
96
500
250
0
94
92
90
–75 –50 –25
0
25
50
75 100
125
0
1
2
3
4
5
6
7
8
T
A
– Free-Air Temperature – °C
V
DD
– Supply Voltage – V
Figure 32
Figure 33
†‡
‡
SLEW RATE
vs
SLEW RATE
vs
FREE-AIR TEMPERATURE
LOAD CAPACITANCE
3.5
3
4
3
V
= 5 V
DD
V
= 5 V
= –1
= 25°C
DD
R
C
A
= 600 Ω
= 100 pF
= 1
L
L
V
SR+
SR–
A
V
A
T
2.5
2
SR–
SR+
2
1
0
1.5
1
0.5
0
1
2
3
4
5
–75 –50 –25
0
25
50
75 100 125
10
10
10
10
10
T
A
– Free-Air Temperature – °C
C
– Load Capacitance – pF
L
Figure 34
Figure 35
†
‡
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where V = 5 V, all loads are referenced to 2.5 V. For all curves where V = 3 V, all loads are referenced to 1.5 V.
DD DD
19
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SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
INVERTING LARGE-SIGNAL PULSE
INVERTING LARGE-SIGNAL PULSE
†
†
RESPONSE
RESPONSE
3
2.5
2
5
4
3
V
= 3 V
= 600 Ω
= 100 pF
= –1
V
= 5 V
= 600 Ω
= 100 pF
= –1
DD
DD
R
C
A
T
R
C
A
T
L
L
V
L
L
V
= 25°C
= 25°C
A
A
1.5
1
2
1
0
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
t – Time – µs
t – Time – µs
Figure 36
Figure 37
VOLTAGE-FOLLOWER LARGE-SIGNAL
VOLTAGE-FOLLOWER LARGE-SIGNAL
†
†
PULSE RESPONSE
PULSE RESPONSE
5
4
3
2.5
2
V
= 3 V
= 600 Ω
= 100 pF
= 1
= 25°C
DD
V
R
C
= 5 V
= 600 Ω
= 100 pF
= 1
DD
L
L
R
C
A
L
L
V
A
V
A
T
A
T
= 25°C
3
2
1.5
1
1
0
0.5
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
t – Time – µs
t – Time – µs
Figure 38
Figure 39
†
For all curves where V
= 5 V, all loads are referenced to 2.5 V. For all curves where V
= 3 V, all loads are referenced to 1.5 V.
DD
DD
20
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Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
INVERTING SMALL-SIGNAL
INVERTING SMALL-SIGNAL
†
†
PULSE RESPONSE
PULSE RESPONSE
1.56
1.54
2.56
2.54
V
= 3 V
V
= 5 V
= 600 Ω
= 100 pF
= –1
= 25°C
DD
L
L
DD
L
L
R
C
A
= 600 Ω
= 100 pF
= –1
R
C
A
V
A
V
A
T
= 25°C
T
1.52
1.5
2.52
2.5
1.48
1.46
2.48
2.46
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
t – Time – µs
t – Time – µs
Figure 40
Figure 41
VOLTAGE-FOLLOWER SMALL-SIGNAL
VOLTAGE-FOLLOWER SMALL-SIGNAL
†
†
PULSE RESPONSE
PULSE RESPONSE
2.56
2.54
1.56
1.54
V
R
C
= 5 V
= 600 Ω
= 100 pF
= 1
DD
L
L
V
R
C
= 3 V
= 600 Ω
= 100 pF
= 1
DD
L
L
A
V
A
A
V
A
T
= 25°C
T
= 25°C
2.52
1.52
1.5
2.5
2.48
1.48
1.48
2.46
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
2.25 2.50
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
2.25 2.5
t – Time – µs
t – Time – µs
Figure 42
Figure 43
†
For all curves where V
DD
= 5 V, all loads are referenced to 2.5 V. For all curves where V = 3 V, all loads are referenced to 1.5 V.
DD
21
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Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
†
†
EQUIVALENT INPUT NOISE VOLTAGE
EQUIVALENT INPUT NOISE VOLTAGE
vs
vs
FREQUENCY
FREQUENCY
120
100
80
120
100
80
V
= 5 V
= 20 Ω
= 25°C
V
= 3 V
= 20 Ω
= 25°C
DD
S
DD
S
R
T
R
T
A
A
60
60
40
40
20
0
20
0
1
2
3
4
10
1
2
3
4
10
10
10
10
10
10
10
f – Frequency – Hz
f – Frequency – Hz
Figure 44
Figure 45
†
TOTAL HARMONIC DISTORTION PLUS NOISE
INPUT NOISE VOLTAGE OVER
vs
†
A 10-SECOND PERIOD
FREQUENCY
1000
10
A
V
= 10
V
= 5 V
DD
f = 0.1 Hz to 10 Hz
V
T
A
= 5 V
DD
= 25°C
750
500
250
0
T
A
= 25°C
A
V
= 100
A
= 1
V
1
A
= 100
V
R
R
= 600 Ω to 2.5 V
= 600 Ω to 0 V
L
L
–250
–500
0.1
A
V
= 10
–750
A
V
= 1
0.01
–1000
1
2
3
4
5
10
10
10
10
f – Frequency – Hz
10
0
2
4
6
8
10
t – Time – s
Figure 46
Figure 47
†
For all curves where V
DD
= 5 V, all loads are referenced to 2.5 V. For all curves where V
= 3 V, all loads are referenced to 1.5 V.
DD
22
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Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
‡
†‡
GAIN-BANDWIDTH PRODUCT
GAIN-BANDWIDTH PRODUCT
vs
vs
SUPPLY VOLTAGE
FREE-AIR TEMPERATURE
2.5
2.25
2
4
R
C
T
A
= 600 Ω
= 100 pF
= 25°C
L
L
V
= 5 V
DD
f = 10 kHz
3.5
3
R
C
= 600 Ω
= 100 pF
L
L
2.5
2
1.75
1.5
1.5
1
0
1
2
3
4
5
6
7
8
–75 –50 –25
0
25
50
75
100
125
V
DD
– Supply Voltage – V
T
A
– Free-Air Temperature – °C
Figure 48
Figure 49
‡
GAIN MARGIN
‡
GAIN MARGIN
vs
vs
LOAD CAPACITANCE
LOAD CAPACITANCE
20
15
10
20
15
T
R
= 25°
= ∞
T
R
= 25°
= 600 Ω
A
L
A
L
R
= 100 Ω
R
= 100 Ω
null
null
R
= 500 Ω
null
R
= 500 Ω
null
R
= 1000 Ω
null
R
= 50 Ω
null
10
5
R
= 50 Ω
null
5
0
R
= 0
null
R
= 0
2
null
0
10
1
3
4
5
10
10
10
C
10
10
1
2
L
3
4
5
10
C
10
10
10
– Load Capacitance – pF
L
– Load Capacitance – pF
Figure 50
Figure 51
†
‡
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
For all curves where V = 5 V, all loads are referenced to 2.5 V. For all curves where V = 3 V, all loads are referenced to 1.5 V.
DD DD
23
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
†
PHASE MARGIN
vs
†
PHASE MARGIN
vs
LOAD CAPACITANCE
LOAD CAPACITANCE
75°
60°
45°
75°
60°
45°
T
R
= 25°C
= 600 Ω
T
R
= 25°C
= ∞
A
L
A
L
R
= 1000 Ω
null
R
= 500 Ω
null
R
= 100 Ω
R
= 500 Ω
null
null
30°
30°
R
= 100 Ω
null
R
= 50 Ω
null
R
= 50 Ω
null
15°
0°
R
= 0 Ω
15°
0°
null
R
= 0
null
1
2
3
4
5
10
1
2
3
4
5
10
10
10
10
10
10
10
C
10
10
C
– Load Capacitance – pF
L
– Load Capacitance – pF
L
Figure 52
Figure 53
†
UNITY-GAIN BANDWIDTH
vs
†
UNITY-GAIN BANDWIDTH
vs
LOAD CAPACITANCE
LOAD CAPACITANCE
10
10
T
R
= 25°C
= ∞
A
L
T
R
= 25°C
= 600 Ω
A
L
1
1
0.1
10
0.1
10
2
3
4
5
10
10
10
2
3
4
5
10
10
10
C
– Load Capacitance – pF
C
– Load Capacitance – pF
L
L
Figure 54
Figure 55
†
For all curves where V
= 5 V, all loads are referenced to 2.5 V. For all curves where V
= 3 V, all loads are referenced to 1.5 V.
DD
DD
24
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Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
APPLICATION INFORMATION
driving large capacitive loads
The TLV2231 is designed to drive larger capacitive loads than most CMOS operational amplifiers. Figure 50
through Figure 55 illustrate its ability to drive loads greater than 100 pF while maintaining good gain and phase
margins (R
= 0).
null
A small series resistor (R ) at the output of the device (see Figure 56) improves the gain and phase margins
null
when driving large capacitive loads. Figure 50 through Figure 53 show the effects of adding series resistances
of 50 Ω, 100 Ω, 500 Ω, and 1000 Ω. The addition of this series resistor has two effects: the first effect is that
it adds a zero to the transfer function and the second effect is that it reduces the frequency of the poleassociated
with the output load in the transfer function.
The zero introduced to the transfer function is equal to the series resistance times the load capacitance. To
calculate the approximate improvement in phase margin, equation 1 can be used.
–1
(1)
∆φ
tan
2 × π × UGBW × R
× C
m1
null
L
where :
∆φ
improvement in phase margin
m1
UGBW
unity-gain bandwidth frequency
output series resistance
R
null
C
load capacitance
L
The unity-gain bandwidth (UGBW) frequency decreases as the capacitive load increases (see Figure 54 and
Figure 55). To use equation 1, UGBW must be approximated from Figure 54 and Figure 55.
V
DD+
R
null
V
I
–
+
C
L
R
V
DD–
/GND
L
Figure 56. Series-Resistance Circuit
25
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Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
APPLICATION INFORMATION
macromodel information
Macromodel information provided was derived using Microsim Parts , the model generation software used
with Microsim PSpice . The Boyle macromodel (see Note 6) and subcircuit in Figure 57 are generated using
the TLV2231 typical electrical and operating characteristics at T = 25°C. Using this information, output
A
simulations of the following key parameters can be generated to a tolerance of 20% (in most cases):
Maximum positive output voltage swing
Maximum negative output voltage swing
Slew rate
Unity-gain frequency
Common-mode rejection ratio
Phase margin
Quiescent power dissipation
Input bias current
DC output resistance
AC output resistance
Short-circuit output current limit
Open-loop voltage amplification
NOTE 6: G. R. Boyle, B. M. Cohn, D. O. Pederson, andJ. E. Solomon, “MacromodelingofIntegratedCircuitOperationalAmplifiers,”IEEEJournal
of Solid-State Circuits, SC-9, 353 (1974).
99
DLN
3
EGND
+
–
V
DD+
92
9
FB
+
91
90
RSS
ISS
RO2
–
+
–
+
VB
DLP
RP
2
VLP
VLN
HLIM
–
+
–
10
+
–
VC
IN –
IN+
R2
C2
J1
J2
7
DP
6
53
+
–
1
VLIM
11
DC
12
RD2
GA
GCM
8
C1
RD1
60
RO1
+
–
DE
VAD
5
54
V
DD–
–
+
4
VE
OUT
.SUBCKT TLV2231 1 2 3 4 5
RD1
RD2
R01
R02
RP
RSS
VAD
VB
VC
VE
60
60
8
11
12
5
3.183E3
3.183E3
25
C1
11
6
12
7
13.51E–12
C2
50.00E–12
DC
5
53
5
DX
DX
DX
DX
DX
7
99
4
25
DE
54
90
92
4
3
6.553E3
2.500E6
–.5
DLP
DLN
DP
91
90
3
10
60
9
99
4
0
DC 0
EGND
FB
99
7
0
99
POLY (2) (3,0) (4,0) 0 .5 .5
POLY (5) VB VC VE VLP
3
53
4
DC .795
DC .795
DC 0
54
7
+ VLN 0 90.83E3 –10E3 10E3 10E3 –10E3
VLIM
VLP
VLN
8
GA
6
0
6
11
12 314.2E–6
99 242.35E–9
87.00E–6
91
0
0
DC 12.4
DC 17.4
GCM
ISS
HLIM
J1
0
10
DC
92
3
10
0
.MODEL DX D (IS=800.0E–18)
90
11
12
6
VLIM 1K
10 JX
.MODEL JX PJF (IS=500.0E–15 BETA=2.939E–3
2
1
+ VTO=–.065)
.ENDS
J2
10 JX
R2
9
100.0E3
Figure 57. Boyle Macromodel and Subcircuit
PSpice and Parts are trademark of MicroSim Corporation.
Macromodels, simulation models, or other models provided by TI,
directly or indirectly, are not warranted by TI as fully representing all
of the specification and operating characteristics of the
semiconductor product to which the model relates.
26
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
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any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
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CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
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In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
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Copyright 1998, Texas Instruments Incorporated
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