TLV75709PDRVR [TI]

具有使能功能的 1A、低 IQ、高精度、低压降稳压器 | DRV | 6 | -40 to 125;


型号：	TLV75709PDRVR
厂家：	TEXAS INSTRUMENTS
描述：	具有使能功能的 1A、低 IQ、高精度、低压降稳压器 \| DRV \| 6 \| -40 to 125 光电二极管输出元件稳压器调节器
文件：	总36页 (文件大小：2346K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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TLV757P

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

TLV757P 1-A、低 I_Q、小尺寸、低压降稳压器

1 特性

3 说明

•

输入电压范围：1.45V 至 5.5V

可用固定输出电压范围：

0.6V 至 5V（阶跃为 50mV）

TLV757P 低压降稳压器 (LDO) 是一款超小型低静态电

流 LDO，可提供 1A 拉电流，具有良好的线路和负载

瞬态性能。经优化的 TLV757P 可支持 1.45V 至 5.5V

的输入电压范围从而适用于各种应用。为最大程度地

降低成本和解决方案尺寸，该器件在 0.6V 至 5V 范围

内以固定输出电压的形式提供，以支持现代 MCU 更低

的内核电压。此外，TLV757P 具备带有使能功能的低

I_Q，从而可将待机功耗降至最低。该器件具有内部软

启动功能，旨在降低浪涌电流，该电流将为负载提供受

控电压并在启动过程中最大程度地降低输入电压压降。

关断时，该器件可主动下拉输出以快速释放输出并确保

已知的启动状态。

–

•

低 I_Q：25µA（典型值）

低压降：

–

1A 电流时为 425mV（最大值）(3.3V_OUT)

•

输出精度：1%（最大值）

内置软启动功能，具有单调 V_OUT上升

折返电流限制

有源输出放电

高 PSRR：100kHz 时为 45dB

与 1µF 陶瓷输出电容器搭配使用时可保持稳定

封装：

TLV757P 在与支持小尺寸总体解决方案的小型陶瓷输

出电容器搭配使用时，可保持稳定。高精度带隙与误差

放大器支持 1% 的典型精度。所有器件版本均具有集

成的热关断保护、电流限制和低压锁定 (UVLO) 功能。

TLV757P 包含一个内部过流保护限制，有助于在短路

事件中减少热耗散。

–

SOT-23-5（预览）

2mm × 2mm (WSON-6)

2 应用

•

机顶盒、电视和游戏机

便携式和电池供电类设备

台式机、笔记本和超级本

平板电脑和遥控器

器件信息⁽¹⁾

器件型号

TLV757P

封装

SON (6)

封装尺寸（标称值）

2.00mm × 2.00mm

白色家电和电器

SOT-23 (5)（预览） 2.90mm x 1.60mm

电网基础设施和保护继电器

摄像头模块和图像传感器

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附

录。

典型应用

启动波形

175

150

125

100

V_OUT

V_IN

V_EN

I_OUT

OUT

TLV757P

C_OUT

C_IN

GND

OFF

0.2 0.4 0.6 0.8

1.2 1.4 1.6 1.8

Time (ms)

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION

DATA.

English Data Sheet: SBVS322

TLV757P

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

www.ti.com.cn

7.4 Device Functional Modes........................................ 14

Application and Implementation ........................ 15

8.1 Application Information............................................ 15

8.2 Typical Application ................................................. 19

Power Supply Recommendations...................... 20

特性.......................................................................... 1

应用.......................................................................... 1

说明.......................................................................... 1

修订历史记录 ........................................................... 2

Pin Configuration and Functions......................... 3

Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings ............................................................ 4

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 4

6.5 Electrical Characteristics........................................... 5

6.6 Typical Characteristics.............................................. 7

Detailed Description ............................................ 12

7.1 Overview ................................................................. 12

7.2 Functional Block Diagram ....................................... 12

7.3 Feature Description................................................. 12

10 Layout................................................................... 21

10.1 Layout Guidelines ................................................. 21

10.2 Layout Examples................................................... 21

11 器件和文档支持 ..................................................... 22

11.1 器件支持................................................................ 22

11.2 接收文档更新通知 ................................................. 22

11.3 社区资源................................................................ 22

11.4 商标....................................................................... 22

11.5 静电放电警告......................................................... 22

11.6 Glossary................................................................ 22

12 机械、封装和可订购信息....................................... 22

4 修订历史记录

注：之前版本的页码可能与当前版本有所不同。

Changes from Original (October 2017) to Revision A

Page

•

将 DRV 封装状态发布为生产 .................................................................................................................................................. 1

TLV757P

www.ti.com.cn

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

5 Pin Configuration and Functions

DBV Package (Preview)

5-Pin SOT-23

DRV Package

6-Pin SON With Exposed Thermal Pad

Top View

GND

OUT

Thermal

Pad

GND

Not to scale

NC- no internal connection

Pin Functions

I/O

DESCRIPTION

NAME

DBV

DRV

Enable pin. Drive EN greater than V_HIto turn on the regulator. Drive EN less

than V_LOto place the LDO into shutdown mode.

GND

—

Ground pin

Input pin. A capacitor with a value of 1 µF or larger is required from this pin to

ground⁽¹⁾. See the Input and Output Capacitor Selection section for more

information.

2, 5

OUT

—

No internal connection

Regulated output voltage pin. A capacitor with a value of 1 µF or larger is

required from this pin to ground⁽¹⁾. See the Input and Output Capacitor Selection

section for more information.

Connect the thermal pad to a large-area ground plane. The thermal pad is

internally connected to GND.

Thermal pad

—

Pad

—

(1) The nominal input and output capacitance must be greater than 0.47 µF; throughout this document the nominal derating on these

capacitors is 50%. Take care to ensure that the effective capacitance at the pin is greater than 0.47 µF.

TLV757P

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

www.ti.com.cn

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

MIN

–0.3

–40

MAX

UNIT

Supply voltage, V_IN

Enable voltage, V_EN

(2)

Output voltage, V_OUT

V_IN+ 0.3

150

Operating junction temperature range, T_J

Storage temperature, T_stg

°C

–65

150

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The absolute maximum rating is V_IN+ 0.3 V or 6 V, whichever is smaller

6.2 ESD Ratings

VALUE

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾

±1000

V_(ESD)

Electrostatic discharge

Charged-device model (CDM), per JEDEC specification JESD22-

C101⁽²⁾

±500

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 500-V HBM is possible with the necessary precautions.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 250-V CDM is possible with the necessary precautions.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

1.45

0.6

NOM

MAX

5.5

UNIT

V_IN

Input voltage

V_OUT

V_EN

I_OUT

C_IN

Output voltage

Enable voltage

5.5

Output current

Input capacitor

µF

kHz

°C

C_OUT

f_EN

Output capacitor

Enable toggle frequency

Junction temperature

200

T_J

–40

125

6.4 Thermal Information

TLV757

THERMAL METRIC⁽¹⁾

DBV (SOT-23)

5 PINS

231.1

DRV (SON)

UNIT

6 PINS

100.2

108.5

64.3

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

R_θJC(top)

R_θJB

118.4

64.4

ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

28.4

10.4

ψ_JB

63.8

64.8

R_θJC(bot)

N/A

34.7

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

TLV757P

www.ti.com.cn

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

6.5 Electrical Characteristics

over operating free-air temperature range (T_J= –40°C to +125°C), V_IN= V_OUT+ 0.5 V or 1.45 V (whichever is greater), I_OUT

1 mA, V_EN= V_IN, and C_IN= C_OUT= 1 µF (unless otherwise noted); all typical values are at T_J= 25°C.

PARAMETER

Input voltage

Output voltage

TEST CONDITIONS

MIN

1.45

0.6

TYP

MAX

5.5

UNIT

V_IN

V_OUT

–40°C ≤ T_J≤ 85°C, V_OUT≥ 1 V

–40°C ≤ T_J≤ 85°C, 0.6 V ≤ V_OUT< 1 V

_OUT≥ 1 V

–1%

–10

Output accuracy

–1.5%

–15

1.5%

0.6 V ≤ V_OUT< 1 V

V_OUT+ 0.5 V⁽¹⁾≤ V_IN≤ 5.5 V

(Δ_{VOUT ΔVIN}

)

Line regulation

Load regulation

0.044

0.060

DRV package

DBV package

ΔV_OUT/ΔI_OU

0.1 mA ≤ I_OUT≤ 1 A, V_IN≥ 2.4

V/A

T_J= 25°C

I_GND

Ground current

–40°C ≤ T_J≤ +85°C

–40°C ≤ T_J≤ +125°C

µA

V_EN≤ 0.4 V, 1.45 V ≤ V_IN≤ 5.5 V,

I_SHDN

Shutdown current

0.1

1.55

755

–40°C ≤ T_J≤ +125°C

V_OUT= V_OUT- 0.2 V,

_OUT≤ 1.5 V

I_CL

Output current limit

V_IN= V_OUT+ V_DO(MAX)+ 0.25 V

1.2

1.78

V_OUT= 0.9 x V_OUT, 1.5

V < V_OUT≤ 4.5 V

Short circuit current

limit

I_SC

V_OUT= 0 V, V_IN= V_OUT+ V_DO(MAX)+ 0.25 V

0.6 V ≤ V_OUT< 0.8 V

1350

1200

1100

1000

700

1400

1300

1150

1050

800

0.8 V ≤ V_OUT< 1 V

1 V ≤ V_OUT< 1.2 V

1.2 V ≤ V_OUT< 1.5 V

1.5 V ≤ V_OUT< 1.8 V

1.8 V ≤ V_OUT< 2.5 V

2.5 V ≤ V_OUT< 3.3 V

3.3 V ≤ V_OUT< 5.0 V

0.6 V ≤ V_OUT< 0.8 V

0.8 V ≤ V_OUT< 1 V

1 V ≤ V_OUT< 1.2 V

1.2 V ≤ V_OUT< 1.5 V

1.5 V ≤ V_OUT< 1.8 V

1.8 V ≤ V_OUT< 2.5 V

2.5 V ≤ V_OUT< 3.3 V

3.3 V ≤ V_OUT< 5.0 V

I_OUT= 1 A,

–40°C ≤ T_J≤ +85°C

650

750

500

600

300

425

V_DO

Dropout voltage

1450

1350

1200

1100

850

I_OUT= 1 A,

–40°C ≤ T_J≤ +125°C

800

650

475

f = 1 kHz, V_IN= V_OUT+ 1 V, I_OUT= 50 mA

f = 100 kHz, , V_IN= V_OUT+ 1 V, I_OUT= 50 mA

f = 1 MHz, , V_IN= V_OUT+ 1 V, I_OUT= 50 mA

BW = 10 Hz to 100 kHz, V_OUT= 1.2 V, I_OUT= 1 A

V_INrising

Power supply rejection

ratio

PSRR

V_n

Output noise voltage

Undervoltage lockout

71.5

1.3

µV_RMS

V_UVLO

1.21

1.44

Undervoltage lockout

hysteresis

V_{UVLO, HYST}

t_STR

V_INfalling

µs

Startup time

550

EN pin high voltage

(enabled)

V_HI

(1) V_IN= 1.45V for V_OUT< 0.9 V

TLV757P

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

www.ti.com.cn

Electrical Characteristics (continued)

over operating free-air temperature range (T_J= –40°C to +125°C), V_IN= V_OUT+ 0.5 V or 1.45 V (whichever is greater), I_OUT

1 mA, V_EN= V_IN, and C_IN= C_OUT= 1 µF (unless otherwise noted); all typical values are at T_J= 25°C.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

EN pin low voltage

(enabled)

V_LO

I_EN

0.3

Enable pin current

V_IN= 5.5 V, EN = 5.5 V

R_PULLDOWNPulldown resistance

V_IN= 3.3 V (P version only)

Shutdown, temperature increasing

Reset, temperature decreasing

165

155

°C

T_SDThermal shutdown

TLV757P

www.ti.com.cn

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

6.6 Typical Characteristics

at operating temperature T_J= 25°C, V_IN= V_OUT(NOM)+ 0.5 V or 1.45 V (whichever is greater), I_OUT= 1 mA, V_EN= V_IN, and C_IN

= C_OUT= 1 µF (unless otherwise noted)

V_IN= 3.8 V

V_IN= 4 V

V_IN= 4.3 V

V_IN= 5 V

I_OUT

100 mA

500 mA

10 mA

50 mA

1 A

100

10k

100k

10M

100

10k

100k

10M

Frequency (Hz)

V_IN= 4.3 V, V_OUT= 3.3 V, C_OUT= 1 µF

V_OUT= 3.3 V, C_OUT= 1 µF, I_OUT= 1 A

图 1. PSRR vs I_OUT

图 2. PSRR Vs V_IN

0.5

0.2

0.1

C_OUT

0.05

C_OUT

1 mF

10 mF

22 mF

100 mF

4.7 mF, 151 mV_RMS

10 mF, 150 mV_RMS

22 mF, 151 mV_RMS

47 mF, 150 mV_RMS

100 mF, 148 mV_RMS

0.02

0.01

0.005

100

10k

100k

10M

100

10k

100k

10M

Frequency (Hz)

V_IN= 4.3 V, V_OUT= 3.3 V, C_OUT= 1 µF

V_OUT= 3.3 V, I_OUT= 1 A, V_RMSBW = 10 Hz to 100 kHz

图 3. PSRR Vs C_OUT

图 4. Output Spectral Noise Density

0.5

0.2

0.1

0.2

0.1

0.05

I_OUT

0.02

0.05

10 mA, 158 mV_RMS

50 mA, 159 mV_RMS

100 mA, 159 mV_RMS

500 mA, 153 mV_RMS

1 A, 151 mV_RMS

V_OUT

0.9 V, 53.8 mV_RMS

1.2 V, 71.47 mV_RMS

3.3 V, 151 mV_RMS

5 V, 217 mV_RMS

0.01

0.02

0.01

0.005

0.002

0.001

0.005

100

10k

100k

10M

100

10k

100k

10M

Frequency (Hz)

I_OUT= 1 A, C_OUT= 1 µF, V_RMSBW = 10 Hz to 100 kHz

V_OUT= 3.3 V, C_OUT= 1 µF, V_RMSBW = 10 Hz to 100 kHz

图 5. Output Spectral Noise Density

图 6. Output Noise vs Frequency and V_OUT

TLV757P

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

www.ti.com.cn

Typical Characteristics (接下页)

at operating temperature T_J= 25°C, V_IN= V_OUT(NOM)+ 0.5 V or 1.45 V (whichever is greater), I_OUT= 1 mA, V_EN= V_IN, and C_IN

= C_OUT= 1 µF (unless otherwise noted)

220

200

180

160

140

120

100

3.328

V_IN

V_OUT

3.32

3.312

3.304

3.296

3.288

3.28

0.5

1.5

2.5

3.5

4.5

Time (ms)

Output Voltage (V)

I_OUT= 1 A, C_OUT= 1 µF, V_RMSBW = 10 Hz to 100 kHz

V_OUT= 3.3 V, C_OUT= 1 µF, V_INslew rate = 1 V/µs

图 7. Output Noise Voltage vs V_OUT

图 8. Line Transient

200

2.2

V_OUT

I_OUT

V_IN

V_OUT

150

100

1.8

1.6

1.4

1.2

-50

-100

-150

-200

-250

-300

-350

0.8

0.6

0.4

0.2

80 100 120 140 160 180 200

0.5

1.5

2.5

3.5

4.5

Time (ms)

V_IN= 5 V, V_OUT= 3.3 V, C_OUT= 1 µF, I_OUTslew rate = 1 A/µs

图 9. 3.3-V, 1-mA to 1-A Load Transient

图 10. V_IN= V_ENPower-Up

175

150

125

100

V_IN

V_OUT

V_IN

V_EN

I_OUT

0.2 0.4 0.6 0.8

1.2 1.4 1.6 1.8

Time (ms)

V_IN= 5 V, I_OUT= 100 mA, V_ENslew rate = 1 V/µs, V_OUT= 3.3 V

图 11. V_IN= V_ENShutdown

图 12. EN Startup

TLV757P

www.ti.com.cn

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

Typical Characteristics (接下页)

at operating temperature T_J= 25°C, V_IN= V_OUT(NOM)+ 0.5 V or 1.45 V (whichever is greater), I_OUT= 1 mA, V_EN= V_IN, and C_IN

= C_OUT= 1 µF (unless otherwise noted)

400

350

300

250

200

150

100

-40èC

0èC

25èC

85èC

125èC

-40èC

0èC

25èC

85èC

125èC

-15

-30

-45

-60

100 200 300 400 500 600 700 800 900 1000

Output Current (mA)

100 200 300 400 500 600 700 800 900 1000

Output Current (mA)

图 13. Load Regulation vs I_OUT

图 14. 3.3-V Dropout Voltage vs I_OUT

400

350

300

250

200

150

100

-40èC

0èC

25èC

85èC

125èC

-40èC

0èC

25èC

85èC

125èC

0.75

0.5

0.25

-0.25

-0.5

-0.75

-1

100 200 300 400 500 600 700 800 900 1000

Output Current (mA)

3.5

3.75

4.25

Input Voltage (V)

4.5

4.75

5.25

5.5

V_OUT= 3.3 V, I_OUT= 1 mA

图 15. 5.0-V Dropout Voltage vs I_OUT

图 16. 3.3 V Regulation vs V_IN(Line Regulation)

1400

1300

1200

1100

1000

900

800

700

600

500

400

300

200

100

-40èC

0èC

25èC

85èC

125èC

0.75

0.5

0.25

-0.25

-0.5

-0.75

-1

-40èC

0èC

25èC

85èC

125èC

5.1

5.2

5.3

5.4

5.5

100 200 300 400 500 600 700 800 900 1000

Output Current (mA)

Input Voltage (V)

I_OUT= 1 mA, V_OUT= 5 V

图 17. 5.0-V Accuracy vs V_IN(Line Regulation)

图 18. I_GNDvs I_OUT

TLV757P

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

www.ti.com.cn

Typical Characteristics (接下页)

at operating temperature T_J= 25°C, V_IN= V_OUT(NOM)+ 0.5 V or 1.45 V (whichever is greater), I_OUT= 1 mA, V_EN= V_IN, and C_IN

= C_OUT= 1 µF (unless otherwise noted)

650

600

550

500

450

400

350

300

250

200

150

100

300

250

200

150

100

-40èC

0èC

25èC

85èC

125èC

-40èC

0èC

25èC

85èC

125èC

Input Voltage (V)

V_OUT= 3.3 V, I_OUT= 1 mA

V_OUT= 3.3 V, I_OUT= 0 mA

图 19. I_GNDvs V_IN

图 20. I_GNDvs V_IN

350

180

160

140

120

100

-40èC

0èC

25èC

85èC

125èC

300

250

200

150

100

-40

-20

100 120 140

Temperature (èC)

Input Voltage (V)

图 22. I_SHDNvs Temperature

图 21. I_SHDNvs V_IN

250

200

150

100

800

750

700

650

600

550

500

-40èC

0èC

25èC

85èC

125èC

EN Negative

EN Positive

-50

-25

100

125

Temperature (èC)

Input Voltage (V)

V_EN= 5.5 V

图 23. Enable Threshold vs Temperature

图 24. I_ENvs V_IN

TLV757P

www.ti.com.cn

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

Typical Characteristics (接下页)

at operating temperature T_J= 25°C, V_IN= V_OUT(NOM)+ 0.5 V or 1.45 V (whichever is greater), I_OUT= 1 mA, V_EN= V_IN, and C_IN

= C_OUT= 1 µF (unless otherwise noted)

600

550

500

450

400

350

300

250

200

150

100

1.4

1.36

1.32

1.28

1.24

1.2

-40èC

0èC

85èC

125èC

25èC

UVLO Negative

-25

UVLO Positive

-50

100

125

Temperature (èC)

Output Current (mA)

图 25. UVLO Threshold vs Temperature

图 26. I_OUTvs V_OUTPulldown Resistor

3.2

2.4

1.6

0.8

-40èC

0èC

25èC

85èC

125èC

200 400 600 800 1000 1200 1400 1600 1800 2000

Output Current (mA)

图 27. 3.3-V Foldback Current Limit vs I_OUT

TLV757P

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

www.ti.com.cn

7 Detailed Description

7.1 Overview

The TLV757P belongs to a family of next-generation, low-dropout regulators (LDOs). This device consumes low

quiescent current and delivers excellent line and load transient performance. The TLV757P is optimized for wide

variety of applications by supporting an input voltage range from 1.4 V to 5.5 V. To minimize cost and solution

size, the device is offered in fixed output voltages ranging from 0.6 V to 5 V to support the lower core voltages of

modern microcontrollers (MCUs).

This regulator offers foldback current limit, shutdown, and thermal protection. The operating junction temperature

is –40°C to +125°C.

7.2 Functional Block Diagram

OUT

Current

Limit

R₁

Thermal

Shutdown

UVLO

120 Ω

R₂

Bandgap

GND

Logic

(1) R₂= 550 kΩ, R₁= adjustable.

7.3 Feature Description

7.3.1 Undervoltage Lockout (UVLO)

An undervoltage lockout (UVLO) circuit disables the output until the input voltage is greater than the rising UVLO

voltage (V_UVLO). This circuit ensures that the device does not exhibit any unpredictable behavior when the supply

voltage is lower than the operational range of the internal circuitry. When V_INis less than V_UVLO, the output is

connected to ground with a 120-Ω pulldown resistor.

7.3.2 Enable (EN)

The enable pin (EN) is active high. Enable the device by forcing the EN pin to exceed V_HI. Turn off the device by

forcing the EN pin below V_LO. If shutdown capability is not required, connect EN to IN.

The device has an internal pull-down that connects a 120-Ω resistor to ground when the device is disabled. The

discharge time after disabling depends on the output capacitance (C_OUT) and the load resistance (R_L) in parallel

with the 120-Ω pulldown resistor. 公式 1 calculates the time constant τ:

120 · R_L

t =

· C_OUT

120 + R_L

(1)

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www.ti.com.cn

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

Feature Description (接下页)

The EN pin is independent of the input pin, but if the EN pin is driven to a higher voltage than V_IN, the current

into the EN pin increases. This effect is illustrated in 图 24. When the EN voltage is higher than the input voltage

there is an increased current flow into the EN pin. If this increased flow causes problems in the application,

sequence the EN pin after V_INis high, or to tie EN to V_INto prevent this flow increase from happening. If EN is

driven to a higher voltage than V_IN, limit the frequency on EN to below 10 kHz.

7.3.3 Internal Foldback Current Limit

The TLV757P has an internal current limit that protects the regulator during fault conditions. The current limit is a

hybrid scheme with brick wall until the output voltage is less than 0.4 × V_OUT(NOM).When the voltage drops below

0.4 × V_OUT(NOM), a foldback current limit is implemented which scales back the current as the output voltage

approaches GND. When the output shorts, the LDO supplies a typical current of I_SC. The output voltage is not

regulated when the device is in current limit. In this condition, the output voltage is the product of the regulated

current and the load resistance. When the device output is shorts, the PMOS pass transistor dissipates power

[(V_IN– V_OUT) × I_SC] until thermal shutdown is triggered and the device turns off. After the device cools down, the

internal thermal shutdown circuit turns the device back on. If the fault condition continues, the device cycles

between current limit and thermal shutdown.

The foldback current-limit circuit limits the current that is allowed through the device to current levels lower than

the minimum current limit at nominal V_OUTcurrent limit (I_CL) during start up. See 图 27 for typical current limit

values. If the output is loaded by a constant-current load during start up, or if the output voltage is negative when

the device is enabled, then the load current demanded by the load may exceed the foldback current limit and the

device may not rise to the full output voltage. For constant-current loads, disable the output load until the output

has risen to the nominal voltage.

Excess inductance can cause the current limit to oscillate. Minimize the inductance to keep the current limit from

oscillating during a fault condition.

7.3.4 Thermal Shutdown

Thermal shutdown protection disables the output when the junction temperature rises to approximately 165°C.

Disabling the device eliminates the power dissipated by the device, allowing the device to cool. When the

junction temperature cools to approximately 155°C, the output circuitry is enabled again. Depending on power

dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off.

This cycling limits regulator dissipation which protects the circuit from damage as a result of overheating.

Activating the thermal shutdown feature usually indicates excessive power dissipation as a result of the product

of the (V_IN– V_OUT) voltage and the load current. For reliable operation, limit junction temperature to a maximum

of 125°C. To estimate the margin of safety in a complete design, increase the ambient temperature until the

thermal protection is triggered; use worst-case loads and signal conditions.

The internal protection circuitry protects against overload conditions but is not intended to be activated in normal

operation. Continuously running the device into thermal shutdown degrades device reliability.

TLV757P

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

www.ti.com.cn

7.4 Device Functional Modes

表 1 lists a comparison between the normal, dropout, and disabled modes of operation.

表 1. Device Functional Modes Comparison

PARAMETER

OPERATING MODE

V_IN

I_OUT

I_OUT< I_CL

—

T_J

T_J< T_SD

Normal⁽¹⁾

Dropout⁽¹⁾

Disabled⁽²⁾

V_IN> V_OUT(NOM)+ V_DO

V_IN< V_OUT(NOM)+ V_DO

V_IN< V_UVLO

V_EN> V_HI

V_EN< V_LO

T_J< T_SD

T_J> T_SD

—

(1) All table conditions must be met.

(2) The device is disabled when any condition is met.

7.4.1 Normal Operation

The device regulates to the nominal output voltage when all of the following conditions are met.

•

The input voltage is greater than the nominal output voltage plus the dropout voltage (V_OUT(NOM)+ V_DO)

The enable voltage has previously exceeded the enable rising threshold voltage and has not decreased

below the enable falling threshold

•

The output current is less than the current limit (I_OUT< I_CL

The device junction temperature is less than the thermal shutdown temperature (T_J< T_SD

)

7.4.2 Dropout Operation

If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other

conditions are met for normal operation, the device operates in dropout. In this mode, the output voltage tracks

the input voltage. During this mode, the transient performance of the device degrades because the pass device

is in a triode state and no longer controls the output voltage of the LDO. Line or load transients in dropout can

result in large output-voltage deviations.

When the device is in a steady dropout state (defined as when the device is in dropout, V_IN< V_OUT(NOM)+ V_DO

right after being in a normal regulation state, but not during startup), the pass-FET is driven as hard as possible

when the control loop is out of balance. During the normal time required for the device to regain regulation, V_IN

V_OUT(NOM)+ V_DO, V_OUTcan overshoot V_OUT(NOM)during fast transients.

≥

7.4.3 Disabled

The output is shut down by forcing the enable pin below V_LO. When disabled, the pass device is turned off,

internal circuits are shut down, and the output voltage is actively discharged to ground by an internal switch from

the output to ground. The active pulldown is on when sufficient input voltage is provided.

TLV757P

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8 Application and Implementation

注

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

8.1 Application Information

8.1.1 Input and Output Capacitor Selection

The TLV757P requires an output capacitance of 0.47 μF or larger for stability. Use X5R- and X7R-type ceramic

capacitors because these capacitors have minimal variation in capacitance value and equivalent series

resistance (ESR) over temperature. When selecting a capacitor for a specific application, consider the DC bias

characteristics for the capacitor. Higher output voltages cause a significant derating of the capacitor. As a

general rule, ceramic capacitors must be derated by 50%. For best performance, TI recommends a maximum

output capacitance value of 200 µF.

Place a 1 µF or greater capacitor on the input pin of the LDO. Some input supplies have a high impedance.

Placing a capacitor on the input supply reduces the input impedance. The input capacitor counteracts reactive

input sources and improves transient response and PSRR. If the input supply has a high impedance over a large

range of frequencies, several input capacitors are used in parallel to lower the impedance over frequency. Use a

higher-value capacitor if large, fast, rise-time load transients are expected, or if the device is located several

inches from the input power source.

8.1.2 Dropout Voltage

The TLV757P uses a PMOS pass transistor to achieve low dropout. When (V_IN– V_OUT) is less than the dropout

voltage (V_DO), the PMOS pass device is in the linear region of operation and the input-to-output resistance is the

R_DS(ON)of the PMOS pass element. V_DOscales linearly with the output current because the PMOS device

functions like a resistor in dropout mode. As with any linear regulator, PSRR and transient response degrade as

(V_IN– V_OUT) approaches dropout operation. See 图 14 and 图 15 for typical dropout values.

8.1.3 Exiting Dropout

Some applications have transients that place the LDO into dropout, such as slower ramps on V_INduring start-up.

As with other LDOs, the output may overshoot on recovery from these conditions. A ramping input supply causes

an LDO to overshoot on start-up when the slew rate and voltage levels are in the correct range; see 图 28. Use

an enable signal to avoid this condition.

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ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

www.ti.com.cn

Application Information (接下页)

Input Voltage

Response time for

LDO to get back into

regulation.

Load current discharges

output voltage.

V_IN= V_OUT(nom)+ V_DO

Output Voltage

Dropout

V_OUT= V_IN- V_DO

Output Voltage in

normal regulation.

Time

图 28. Startup into Dropout

Line transients out of dropout can also cause overshoot on the output of the regulator. These overshoots are

caused by the error amplifier having to drive the gate capacitance of the pass element and bring the gate back to

the correct voltage for proper regulation. 图 29 illustrates what is happening internally with the gate voltage and

how overshoot can be caused during operation. When the LDO is placed in dropout, the gate voltage (VGS) is

pulled all the way down to give the pass device the lowest on-resistance as possible. However, if a line transient

occurs while the device is in dropout, the loop is not in regulation which can cause the output to overshoot until

the loop responds and the output current pulls the output voltage back down into regulation. If these transients

are not acceptable, then continue to add input capacitance in the system until the transient is slow enough to

reduce the overshoot.

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ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

Application Information (接下页)

Transient response

time of the LDO

Input Voltage

Load current

discharges

output

voltage

Output Voltage

V_DO

Output Voltage in

normal regulation

Dropout

V_OUT= V_IN- V_DO

VGS voltage

(pass device

fully off)

Input Voltage

VGS voltage for

normal operation

VGS voltage for

normal operation

Gate Voltage

VGS voltage in

dropout (pass device

fully on)

Time

图 29. Line Transients From Dropout

8.1.4 Reverse Current

As with most LDOs, excessive reverse current can damage this device.

Reverse current flows through the body diode on the pass element instead of the normal conducting channel. At

high magnitudes, this current flow degrades the long-term reliability of the device, as a result of one of the

following conditions:

•

Degradation caused by electromigration

Excessive heat dissipation

Potential for a latch-up condition

Conditions where reverse current can occur are outlined in this section, all of which can exceed the absolute

maximum rating of V_OUT> V_IN+ 0.3 V:

•

If the device has a large C_OUTand the input supply collapses with little or no load current

The output is biased when the input supply is not established

The output is biased above the input supply

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ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

www.ti.com.cn

Application Information (接下页)

If reverse current flow is expected in the application, external protection must be used to protect the device. 图

30 shows one approach of protecting the device.

Schottky Diode

Internal Body Diode

OUT

Device

C_OUT

C_IN

GND

图 30. Example Circuit for Reverse Current Protection Using a Schottky Diode

8.1.5 Power Dissipation (P_D)

Circuit reliability demands that proper consideration is given to device power dissipation, location of the circuit on

the printed circuit board (PCB), and correct sizing of the thermal plane. The PCB area around the regulator must

be as free of other heat-generating devices as possible that cause added thermal stresses.

As a first-order approximation, power dissipation in the regulator depends on the input-to-output voltage

difference and load conditions. Use 公式 2 to approximate P_D:

P_D= (V_IN– V_OUT) × I_OUT

(2)

It is important to minimize power dissipation to achieve greater efficiency. This minimizing process is achieved by

selecting the correct system voltage rails. Proper selection helps obtain the minimum input-to-output voltage

differential . The low dropout of the device allows for maximum efficiency across a wide range of output voltages.

The main heat conduction path for the device is through the thermal pad on the package. As such, the thermal

pad must be soldered to a copper pad area under the device. This pad area should contain an array of plated

vias that conduct heat to inner plane areas or to a bottom-side copper plane.

The maximum allowable junction temperature (T_J) determines the maximum power dissipation for the device.

Power dissipation and junction temperature are most often related by the junction-to-ambient thermal resistance

(θ_JA) of the combined PCB, device package, and the temperature of the ambient air (T_A), according to 公式 3.

T_J= T_A+ θ_JA× P_D

(3)

Unfortunately, this thermal resistance (θ_JA) is dependent on the heat-spreading capability built into the particular

PCB design, and therefore varies according to the total copper area, copper weight, and location of the planes.

The θ_JAvalue is only used as a relative measure of package thermal performance. θ_JAis the sum of the VQFN

package junction-to-case (bottom) thermal resistance (θ_JCbot) plus the thermal resistance contribution by the PCB

copper.

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ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

Application Information (接下页)

8.1.5.1 Estimating Junction Temperature

The JEDEC standard recommends the use of psi (Ψ) thermal metrics to estimate the junction temperatures of

the LDO when in-circuit on a typical PCB board application. These metrics are not thermal resistances, but offer

practical and relative means of estimating junction temperatures. These psi metrics are independent of the

copper-spreading area. The key thermal metrics (Ψ_JTand Ψ_JB) are shown in the table and are used in

accordance with 公式 4.

Y_JT: T_J= T_T+ Y_JT´ P_D

Y_JB: T_J= T_B+ Y_JB´ P_D

where:

•

P_Dis the power dissipated as shown in 公式 2

T_Tis the temperature at the center-top of the device package, and

T_Bis the PCB surface temperature measured 1 mm from the device package and centered on the package

edge

(4)

8.2 Typical Application

OUT

GND

1 …F

DC-DC

Converter

1 …F

TLV757P

Load

OFF

图 31. TLV757P Typical Application

8.2.1 Design Requirements

表 2 lists the design requirements for this application.

表 2. Design Parameters

PARAMETER

Input voltage

DESIGN REQUIREMENT

2.5 V

1.8 V

Output voltage

Input current

700 mA (maximum)

600-mA DC

70°C

Output load

Maximum ambient temperature

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ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

www.ti.com.cn

8.2.2 Detailed Design Procedure

8.2.2.1 Input Current

During normal operation, the input current to the LDO is approximately equal to the output current of the LDO.

During startup, the input current is higher as a result of the inrush current charging the output capacitor. Use 公式

5 to calculate the current through the input.

_OUT´ dV_OUT(t)

V_OUT(t)

R_LOAD

I_OUT(t)

where:

•

V_OUT(t) is the instantaneous output voltage of the turn-on ramp

dV_OUT(t) / dt is the slope of the V_OUTramp

R_LOADis the resistive load impedance

(5)

8.2.2.2 Thermal Dissipation

The junction temperature can be determined using the junction-to-ambient thermal resistance (R_θJA) and the total

power dissipation (P_D). Use 公式 6 to calculate the power dissipation. Multiply P_Dby R_θJAand add the ambient

temperature (T_A) to calculate the junction temperature (T_J) as 公式 7 shows.

P_D= (I_GND+ I_OUT) × (V_IN– V_OUT

)

(6)

(7)

T_J= R_θJA× P_D+ T_A

If the (T_J(MAX)) value does not exceed 125°C calculate the maximum ambient temperature as 公式 8 shows. 公式

9 calculates the maximum ambient temperature with a value of 82.916°C.

T_A(MAX)= T_J(MAX)– R_θJA× P_D

(8)

(9)

T_A(MAX)= 125°C – 100.2 × (2.5 V –1.8 V) × (0.6 A) = 82.916°C

8.2.3 Application Curves

2.5

1.2

100

0.8

0.6

0.4

0.2

1.5

V_IN

V_OUT

I_IN

0.5

I_OUT= 600 mA

100 1k

0.5

1.5

2.5

3.5

4.5

10k

100k

10M

Time (ms)

Frequency (Hz)

V_IN= 2.5 V, V_OUT= 1.8 V, I_OUT= 600 mA

图 32. Startup With a 600-mA Load

图 33. PSRR (2.5 V to 1.8 V at 600 mA)

9 Power Supply Recommendations

Connect a low output impedance power supply directly to the IN pin of the TLV757P. If the input source is

reactive, consider using multiple input capacitors in parallel with the 1-µF input capacitor to lower the input supply

impedance over frequency.

TLV757P

www.ti.com.cn

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

10 Layout

10.1 Layout Guidelines

•

Place input and output capacitors as close as possible to the device.

Use copper planes for device connections to optimize thermal performance.

Place thermal vias around the device to distribute the heat.

10.2 Layout Examples

V_OUT

V_IN

hÜÇ

GND PLANE

Represents via used for

application specific connections

图 34. Layout Example: DBV Package

V_IN

V_OUT

hÜÇ

GND PLANE

Represents via used for

application specific connections

图 35. Layout Example: DRV Package

TLV757P

ZHCSH76A –OCTOBER 2017–REVISED DECEMBER 2017

www.ti.com.cn

11 器件和文档支持

11.1 器件支持

11.1.1 器件命名规则

表 3. 器件命名规则⁽¹⁾⁽²⁾

产品

V_OUT

xx(x) 为标称输出电压。对于分辨率为 50mV 的输出电压，订货编号中使用两位数字；否则，使用三位数

字（例如，28 = 2.8V；125 = 1.25 V）。

TLV757xx(x)Pyyyz

P 表示有源输出放电功能。TLV757P 系列的所有产品在器件处于禁用状态时都可以对输出进行主动放电。

yyy 为封装标识符。

z 为封装数量。R 表示卷（3000 片），T 表示带（250 片）。

(1) 要获得最新的封装和订货信息，请参见本文档末尾的封装选项附录，或者访问器件产品文件夹（www.ti.com.cn）。

(2) 可提供 0.6V 至 5V 范围内的输出电压（以 50mV 为单位增加）。有关器件的详细信息和供货情况，请联系制造商。

11.2 接收文档更新通知

要接收文档更新通知，请导航至 TI.com 上的器件产品文件夹。单击右上角的通知我进行注册，即可每周接收产品

信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。

11.3 社区资源

下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范，

并且不一定反映 TI 的观点；请参阅 TI 的《使用条款》。

TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在

e2e.ti.com 中，您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。

设计支持

TI 参考设计支持可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。

11.4 商标

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.5 静电放电警告

ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可

能会损坏集成电路。

ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可

能会导致器件与其发布的规格不相符。

11.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

12 机械、封装和可订购信息

以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更，恕不另行通知和修

订此文档。如欲获取此产品说明书的浏览器版本，请参阅左侧的导航。

PACKAGE OPTION ADDENDUM

www.ti.com

10-Dec-2020

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

TLV75709PDBVR

TLV75709PDRVR

TLV75710PDBVR

TLV75710PDRVR

TLV75712PDBVR

TLV75712PDRVR

TLV75715PDBVR

TLV75715PDRVR

TLV75718PDBVR

TLV75718PDRVR

TLV75719PDBVR

TLV75719PDRVR

TLV75725PDBVR

TLV75725PDRVR

TLV75728PDBVR

TLV75728PDRVR

TLV75729PDBVR

TLV75730PDBVR

TLV75730PDRVR

TLV75733PDBVR

ACTIVE

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

DBV

DRV

DBV

DRV

DBV

DRV

DBV

DRV

DBV

DRV

DBV

DRV

DBV

DRV

DBV

DRV

DBV

DRV

DBV

3000 RoHS & Green

NIPDAU | SN

Level-1-260C-UNLIM

-40 to 125

1H8F

1HGH

1FEF

1HHH

1FFF

1HIH

1FGF

1HJH

1FHF

1HKH

1H7F

1HLH

1FIF

NIPDAU

NIPDAU | SN

NIPDAU

NIPDAU | SN

NIPDAU

NIPDAU | SN

NIPDAU

NIPDAU | SN

NIPDAU

NIPDAU | SN

NIPDAU

NIPDAU | SN

NIPDAU

1HMH

1FJF

NIPDAU | SN

NIPDAU

1HNH

1H9F

1GHF

1HOH

1FKF

NIPDAU | SN

NIPDAU

NIPDAU | SN

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

10-Dec-2020

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

TLV75733PDRVR

TLV75740PDRVR

ACTIVE

WSON

DRV

3000 RoHS & Green

NIPDAU

Level-1-260C-UNLIM

-40 to 125

1HPH

1HQH

NIPDAU

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

13-May-2023

TAPE AND REEL INFORMATION

REEL DIMENSIONS

TAPE DIMENSIONS

Reel

Diameter

Cavity

A0 Dimension designed to accommodate the component width

B0 Dimension designed to accommodate the component length

K0 Dimension designed to accommodate the component thickness

Overall width of the carrier tape

P1 Pitch between successive cavity centers

Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Sprocket Holes

Q1 Q2

Q3 Q4

Q1 Q2

Q3 Q4

User Direction of Feed

Pocket Quadrants

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

TLV75709PDBVR

TLV75709PDRVR

TLV75710PDBVR

TLV75710PDRVR

TLV75712PDBVR

TLV75712PDRVR

TLV75715PDBVR

TLV75715PDRVR

TLV75718PDBVR

TLV75718PDRVR

TLV75719PDBVR

TLV75719PDRVR

TLV75725PDBVR

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

DBV

DRV

DBV

DRV

DBV

DRV

DBV

DRV

DBV

DRV

DBV

DRV

DBV

3000

180.0

8.4

3.2

2.3

3.2

2.3

3.2

2.3

3.2

2.3

3.2

2.3

3.2

2.3

3.2

2.3

3.2

2.3

3.2

2.3

3.2

2.3

3.2

2.3

3.2

2.3

3.2

1.4

1.15

1.4

4.0

8.0

1.4

1.15

1.4

1.15

1.4

1.15

1.4

1.15

1.4

1.15

1.4

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

13-May-2023

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

TLV75725PDBVR

TLV75725PDRVR

TLV75728PDBVR

TLV75728PDRVR

TLV75729PDBVR

TLV75730PDBVR

TLV75730PDRVR

TLV75733PDBVR

TLV75733PDRVR

TLV75740PDRVR

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

DBV

DRV

DBV

DRV

DBV

DRV

DBV

DRV

3000

180.0

8.4

3.2

2.3

3.2

2.3

3.2

2.3

3.2

2.3

3.2

2.3

3.2

2.3

3.2

2.3

3.2

2.3

1.4

1.15

1.4

4.0

8.0

1.4

1.15

1.4

1.15

1.4

1.15

Pack Materials-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

13-May-2023

TAPE AND REEL BOX DIMENSIONS

Width (mm)

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

TLV75709PDBVR

TLV75709PDRVR

TLV75710PDBVR

TLV75710PDRVR

TLV75712PDBVR

TLV75712PDRVR

TLV75715PDBVR

TLV75715PDRVR

TLV75718PDBVR

TLV75718PDRVR

TLV75719PDBVR

TLV75719PDRVR

TLV75725PDBVR

TLV75725PDRVR

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

DBV

DRV

DBV

DRV

DBV

DRV

DBV

DRV

DBV

DRV

DBV

DRV

DBV

DRV

3000

210.0

185.0

35.0

Pack Materials-Page 3

PACKAGE MATERIALS INFORMATION

www.ti.com

13-May-2023

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

TLV75728PDBVR

TLV75728PDRVR

TLV75729PDBVR

TLV75730PDBVR

TLV75730PDRVR

TLV75733PDBVR

TLV75733PDRVR

TLV75740PDRVR

SOT-23

WSON

SOT-23

WSON

SOT-23

WSON

DBV

DRV

DBV

DRV

DBV

DRV

3000

210.0

185.0

35.0

Pack Materials-Page 4

GENERIC PACKAGE VIEW

DRV 6

WSON - 0.8 mm max height

PLASTIC SMALL OUTLINE - NO LEAD

Images above are just a representation of the package family, actual package may vary.

Refer to the product data sheet for package details.

4206925/F

PACKAGE OUTLINE

DRV0006A

WSON - 0.8 mm max height

SCALE 5.500

PLASTIC SMALL OUTLINE - NO LEAD

2.1

1.9

PIN 1 INDEX AREA

2.1

1.9

0.8

0.7

SEATING PLANE

0.08 C

(0.2) TYP

0.05

0.00

0.1

EXPOSED

THERMAL PAD

1.3

1.6 0.1

4X 0.65

0.35

0.25

PIN 1 ID

(OPTIONAL)

0.3

0.2

0.1

C A

0.05

4222173/B 04/2018

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.

www.ti.com

EXAMPLE BOARD LAYOUT

DRV0006A

WSON - 0.8 mm max height

PLASTIC SMALL OUTLINE - NO LEAD

6X (0.45)

6X (0.3)

(1)

SYMM

(1.6)

(1.1)

4X (0.65)

SYMM

(1.95)

(R0.05) TYP

(

0.2) VIA

TYP

LAND PATTERN EXAMPLE

SCALE:25X

0.07 MIN

ALL AROUND

0.07 MAX

ALL AROUND

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

METAL

SOLDER MASK

OPENING

NON SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

4222173/B 04/2018

NOTES: (continued)

4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature

number SLUA271 (www.ti.com/lit/slua271).

5. Vias are optional depending on application, refer to device data sheet. If some or all are implemented, recommended via locations are shown.

www.ti.com

EXAMPLE STENCIL DESIGN

DRV0006A

WSON - 0.8 mm max height

PLASTIC SMALL OUTLINE - NO LEAD

SYMM

6X (0.45)

METAL

6X (0.3)

(0.45)

SYMM

4X (0.65)

(0.7)

(R0.05) TYP

(1)

(1.95)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

EXPOSED PAD #7

88% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE

SCALE:30X

4222173/B 04/2018

NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

www.ti.com

PACKAGE OUTLINE

DBV0005A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

3.0

2.6

0.1 C

1.75

1.45

0.90

PIN 1

INDEX AREA

(0.1)

2X 0.95

1.9

3.05

2.75

1.9

(0.15)

0.5

0.3

0.15

0.00

(1.1)

TYP

0.2

C A B

NOTE 5

0.25

GAGE PLANE

0.22

0.08

TYP

0.6

0.3

TYP

SEATING PLANE

4214839/G 03/2023

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. Refernce JEDEC MO-178.

4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed 0.25 mm per side.

5. Support pin may differ or may not be present.

www.ti.com

EXAMPLE BOARD LAYOUT

DBV0005A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

PKG

5X (1.1)

5X (0.6)

SYMM

(1.9)

2X (0.95)

(R0.05) TYP

(2.6)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:15X

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

METAL

EXPOSED METAL

0.07 MIN

ARROUND

0.07 MAX

ARROUND

NON SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

4214839/G 03/2023

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com

EXAMPLE STENCIL DESIGN

DBV0005A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

PKG

5X (1.1)

5X (0.6)

SYMM

(1.9)

2X(0.95)

(R0.05) TYP

(2.6)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:15X

4214839/G 03/2023

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

9. Board assembly site may have different recommendations for stencil design.

www.ti.com

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邮寄地址：Texas Instruments, Post Office Box 655303, Dallas, Texas 75265

TLV75709PDRVR [TI]

相关型号：

TLV75710PDBVR

TLV75710PDRVR

TLV75712PDBVR

TLV75712PDRVR

TLV75715PDBVR

TLV75715PDRVR

TLV75718PDBVR

TLV75718PDRVR

TLV75719PDBVR

TLV75719PDRVR

TLV75725PDBVR

TLV75725PDRVR